JPH03232227A - Cleaning up process of mesa type semiconductor element - Google Patents
Cleaning up process of mesa type semiconductor elementInfo
- Publication number
- JPH03232227A JPH03232227A JP2707790A JP2707790A JPH03232227A JP H03232227 A JPH03232227 A JP H03232227A JP 2707790 A JP2707790 A JP 2707790A JP 2707790 A JP2707790 A JP 2707790A JP H03232227 A JPH03232227 A JP H03232227A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- deionized water
- type semiconductor
- mesa
- chlorine gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000004140 cleaning Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000008367 deionised water Substances 0.000 claims abstract description 26
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 26
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000005406 washing Methods 0.000 claims abstract description 12
- 229910001868 water Inorganic materials 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 4
- 239000007864 aqueous solution Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 abstract description 4
- 239000010453 quartz Substances 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 3
- 239000003513 alkali Substances 0.000 abstract 2
- 150000001455 metallic ions Chemical class 0.000 abstract 2
- 239000003344 environmental pollutant Substances 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 231100000719 pollutant Toxicity 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 9
- 229910021645 metal ion Inorganic materials 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010828 elution Methods 0.000 description 2
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、メサ型半導体素子の製造力、法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to manufacturing capabilities and methods for mesa-type semiconductor devices.
［従来の技術］
周知の如く、メサ型半導体素子としては、第２図に示す
ものが知られている。図中の１は、メサ型半導体素子本
体である。この半導体素子本体１の両端には、鉛−錫合
金源の半田２を介して金属リード３ａ、３ｂが設けられ
ている。[Prior Art] As is well known, as a mesa type semiconductor element, the one shown in FIG. 2 is known. 1 in the figure is a mesa-type semiconductor element body. Metal leads 3a and 3b are provided at both ends of this semiconductor element body 1 via solder 2 made of a lead-tin alloy source.
こうした構造の半導体素子４は、通常表面安定化のため
に次のような措置が取られている。即ち、まず腐食性薬
品例えば高温のアルカリ水溶液を収容したガラス又は石
英製の容器内に半導体素子を入れ、エツチングを行う。For the semiconductor element 4 having such a structure, the following measures are usually taken to stabilize the surface. That is, first, a semiconductor element is placed in a glass or quartz container containing a corrosive chemical, such as a high-temperature alkaline aqueous solution, and then etched.
ここに、アルカリ水溶液は沸点近くまで加熱されている
。次に、この半導体素子を脱イオン水を収容した容器内
に入れ、半導体素子に付着した有毒な金属イオンなどを
除去する。Here, the alkaline aqueous solution is heated to near its boiling point. Next, this semiconductor element is placed in a container containing deionized water to remove toxic metal ions and the like attached to the semiconductor element.
［発明が解決しようとする課題］
しかしながら、従来技術によれば、半導体素子の表面に
付着した金属イオンなどを完全に除去する事ができず、
半導体素子の電気的特性が劣化する。この理由は、電極
形成に用いられる半田２が脱イオン水に溶出して半導体
素子の表面に付着するためである。第３図の直線（イ）
は、従来の半導体素子において、電極形成に用いられる
半田が脱イオン水の中に時間とともに溶出する場合を示
す。[Problem to be solved by the invention] However, according to the conventional technology, it is not possible to completely remove metal ions etc. attached to the surface of a semiconductor element.
The electrical characteristics of the semiconductor device deteriorate. The reason for this is that the solder 2 used for electrode formation is eluted into deionized water and adheres to the surface of the semiconductor element. Straight line in Figure 3 (A)
1 shows a case in which solder used to form electrodes in a conventional semiconductor device dissolves into deionized water over time.
本発明は上記事情に鑑みてなされたもので、金属イオン
などの汚染物質が脱イオン水中に溶出するのを防止し、
電気的特性に優れたメサ型半導体素子の洗浄方法を提供
することを目的とする。The present invention has been made in view of the above circumstances, and is intended to prevent contaminants such as metal ions from eluting into deionized water,
An object of the present invention is to provide a method for cleaning a mesa-type semiconductor element with excellent electrical characteristics.
［課題を解決するための手段］
本発明は、メサ型半導体素子を高温のアルカリ水溶液中
に浸漬してエツチングを行う工程と、前記半導体素子を
塩素ガスを含有させた脱イオン水中に浸漬して水洗を行
う工程とを具備する事を特徴とするメサ型半導体素子の
洗浄方法である。[Means for Solving the Problems] The present invention includes a step of etching a mesa-type semiconductor device by immersing it in a high-temperature alkaline aqueous solution, and a step of immersing the semiconductor device in deionized water containing chlorine gas. This is a method for cleaning a mesa-type semiconductor device, characterized by comprising a step of washing with water.
［作用コ
本発明においては、脱イオン水中に塩素ガスを注入する
と、次亜鉛素酸（ＨＣＮ Ｏ）となり、この次亜塩素酸
がＨ゛と次の様に反応して強い酸化力をもち、半田を酸
化して不導体化する。[Function] In the present invention, when chlorine gas is injected into deionized water, it becomes hypochlorous acid (HCN O), and this hypochlorous acid reacts with H in the following manner and has strong oxidizing power. Oxidize the solder to make it nonconductive.
ＨＣ，Ｑ Ｏ＋Ｈ” ｅ−１／２ Ｃ（１２＋Ｈ２０従
って、半田が脱イオン水の中で溶出するのを抑制できる
。HC, Q O+H"e-1/2 C (12+H20) Therefore, it is possible to suppress solder from eluting in deionized water.
［実施例］ 以下、本発明の一実施例について説明する。[Example] An embodiment of the present invention will be described below.
まず、本発明に係る洗浄装置について第１図を参照して
説明する。なお、従来と同部材は同符号を付−して説明
を省略する。First, a cleaning device according to the present invention will be explained with reference to FIG. Incidentally, the same members as those in the prior art are given the same reference numerals and the description thereof will be omitted.
図中の１１は、ガラス又は石英ｌの脱イオン水洗槽であ
る。この水洗槽１１の伸１壁には、脱イオン水を水洗槽
１１に送る脱イオン水管１２が連結されている。この脱
イオン水管１２には、一端が塩素ガスボンベ１３に連結
された配管１４が連結されている。11 in the figure is a deionized water washing tank made of glass or quartz. A deionized water pipe 12 for delivering deionized water to the washing tank 11 is connected to the first wall of the washing tank 11 . A pipe 14 whose one end is connected to a chlorine gas cylinder 13 is connected to this deionized water pipe 12 .
本実施例では、こうした構造の洗浄装置を用いて次のよ
うに洗浄を行う。まず腐食性薬品例えば高温のアルカリ
水溶液を収容したガラス又は石英製の容器内に半導体素
子を入れ、エツチングを行う。ここに、アルカリ水溶液
は沸点近くまで加熱されている。次に、この半導体素子
を前述した水洗槽１１内にセットする。つづいて、塩素
ガスボンベ１３より配管１４を介して脱イオン水管１２
内に塩素ガスを供給しながら、前記脱イオン水管１２よ
り脱イオン水を水洗槽１１に送り、半導体素子に付着し
た有毒な金属イオンなどを除去する。In this embodiment, cleaning is performed as follows using a cleaning apparatus having such a structure. First, a semiconductor element is placed in a glass or quartz container containing a corrosive chemical, such as a high-temperature alkaline aqueous solution, and etching is performed. Here, the alkaline aqueous solution is heated to near its boiling point. Next, this semiconductor element is set in the water washing tank 11 described above. Next, the chlorine gas cylinder 13 is connected to the deionized water pipe 12 via the pipe 14.
While supplying chlorine gas, deionized water is sent from the deionized water pipe 12 to the washing tank 11 to remove toxic metal ions adhering to the semiconductor elements.
このように上記実施例によれば、メサ型半導体素子を高
温のアルカリ水溶液中に浸漬してエツチングを行った後
、前記半導体素子を塩素ガスを含資させた脱イオン水中
に浸漬して水洗を行うため、金属イオンなどの汚染物質
が脱イオン水中に溶出するのを防止し、電気的特性に優
れたメサ型半導体素子をえることができる。According to the above embodiment, the mesa-shaped semiconductor element is etched by immersing it in a high-temperature alkaline aqueous solution, and then the semiconductor element is immersed in deionized water containing chlorine gas and washed with water. As a result, contaminants such as metal ions can be prevented from being eluted into deionized water, and a mesa-type semiconductor device with excellent electrical characteristics can be obtained.
事実、上記実施例に係るメサ型半導体素子において、電
極形成に用いられる半田の溶出量と時間との関係は第３
図の直線（ロ）に示す通りである。In fact, in the mesa-type semiconductor device according to the above example, the relationship between the elution amount of solder used for electrode formation and time is the third one.
This is as shown by the straight line (b) in the figure.
同図より、本発明が従来と比べ半田の溶出量が極めて小
さい事が明らかである。From the figure, it is clear that the amount of solder eluted according to the present invention is extremely small compared to the conventional method.
また、従来及び本発明に係るＮ”ＮＰ＋構造のメサ型半
導体素子の逆耐圧特性図は、第５図（本発明）、第牛図
（従来）に示す通りである。これにより、本発明に係る
メサ型半導体素子が従来のそれより高い逆耐圧を示すこ
とが明らかである。Further, the reverse breakdown voltage characteristic diagrams of mesa type semiconductor devices with N''NP+ structure according to the conventional and present invention are as shown in FIG. 5 (present invention) and No. 5 (conventional). It is clear that such a mesa-type semiconductor device exhibits a higher reverse breakdown voltage than the conventional one.
なお、上記実施例では、脱イオン水管を介して塩素ガス
を水洗槽へ送る場合に述べたが、これに限らず、水洗槽
中に塩素ガスを直接送ってもよい。In the above embodiment, a case has been described in which chlorine gas is sent to the washing tank via a deionized water pipe, but the present invention is not limited to this, and chlorine gas may be sent directly into the washing tank.
［発明の効果］
以上詳述した如く本発明によれば、金属イオンなどの汚
染物質が脱イオン水中に溶出するのを防止し、電気的特
性に優れたメサ型半導体素子の洗浄方法を提供できる。[Effects of the Invention] As detailed above, according to the present invention, it is possible to prevent contaminants such as metal ions from being eluted into deionized water, and to provide a method for cleaning mesa-type semiconductor elements with excellent electrical characteristics. .
第１図は本発明の一実施例に係るメサ型半導体素子の洗
浄方法を示す図、第２図はメサ型半導体素子の断面図、
第３図は本発明及び従来に係るメサ型半導体素子の半田
の溶出量と時間との関係を示す特性図、第今図はｑ足表
によるＮ” ＮＰ＋構造のメサ型半導体素子の逆耐圧特
性図、第Ｓ図はＬ’ｆＨのＮ”ＮＰ＋ 構造のメサ型半
導体素子の逆耐圧特性図である。
１・・・メサ型半導体素子本体、２・・・半田、３ａ。
３ｂ・・・金属リード、４・・・メサ型半導体素子、１
１・・脱イオン水洗槽、１２・・・脱イオン水管１．１
３・・塩素ガスボンベ。FIG. 1 is a diagram showing a method for cleaning a mesa-type semiconductor device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of the mesa-type semiconductor device,
Fig. 3 is a characteristic diagram showing the relationship between solder elution amount and time for mesa-type semiconductor devices according to the present invention and the conventional method, and the present figure is a reverse breakdown voltage characteristic of a mesa-type semiconductor device with an N'' NP+ structure based on a q-foot table. 1 and 2 are reverse breakdown voltage characteristic diagrams of a mesa-type semiconductor element having an L'fH N''NP+ structure. DESCRIPTION OF SYMBOLS 1... Mesa type semiconductor element main body, 2... Solder, 3a. 3b...Metal lead, 4...Mesa type semiconductor element, 1
1... Deionized water washing tank, 12... Deionized water pipe 1.1
3. Chlorine gas cylinder.
Claims (1)
エッチングを行う工程と、前記半導体素子を塩素ガスを
含有させた脱イオン水中に浸漬して水洗を行う工程とを
具備する事を特徴とするメサ型半導体素子の洗浄方法。The method is characterized by comprising a step of etching a mesa-shaped semiconductor element by immersing it in a high-temperature alkaline aqueous solution, and a step of immersing the semiconductor element in deionized water containing chlorine gas and washing it with water. A method for cleaning mesa-type semiconductor devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2707790A JP2892742B2 (en) | 1990-02-08 | 1990-02-08 | Method for cleaning mesa-type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2707790A JP2892742B2 (en) | 1990-02-08 | 1990-02-08 | Method for cleaning mesa-type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03232227A true JPH03232227A (en) | 1991-10-16 |
| JP2892742B2 JP2892742B2 (en) | 1999-05-17 |
Family
ID=12211011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2707790A Expired - Fee Related JP2892742B2 (en) | 1990-02-08 | 1990-02-08 | Method for cleaning mesa-type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2892742B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5261966A (en) * | 1991-01-28 | 1993-11-16 | Kabushiki Kaisha Toshiba | Method of cleaning semiconductor wafers using mixer containing a bundle of gas permeable hollow yarns |
| US6415803B1 (en) * | 1999-10-06 | 2002-07-09 | Z Cap, L.L.C. | Method and apparatus for semiconductor wafer cleaning with reuse of chemicals |
| US6722379B2 (en) * | 1999-08-27 | 2004-04-20 | Product Systems Incorporated | One-piece cleaning tank with indium bonded megasonic transducer |
| US6904921B2 (en) | 2001-04-23 | 2005-06-14 | Product Systems Incorporated | Indium or tin bonded megasonic transducer systems |
-
1990
- 1990-02-08 JP JP2707790A patent/JP2892742B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5261966A (en) * | 1991-01-28 | 1993-11-16 | Kabushiki Kaisha Toshiba | Method of cleaning semiconductor wafers using mixer containing a bundle of gas permeable hollow yarns |
| US5415191A (en) * | 1991-01-28 | 1995-05-16 | Kabushiki Kaisha Toshiba | Arrangement for cleaning semiconductor wafers using mixer |
| US6722379B2 (en) * | 1999-08-27 | 2004-04-20 | Product Systems Incorporated | One-piece cleaning tank with indium bonded megasonic transducer |
| US6415803B1 (en) * | 1999-10-06 | 2002-07-09 | Z Cap, L.L.C. | Method and apparatus for semiconductor wafer cleaning with reuse of chemicals |
| US6904921B2 (en) | 2001-04-23 | 2005-06-14 | Product Systems Incorporated | Indium or tin bonded megasonic transducer systems |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2892742B2 (en) | 1999-05-17 |
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