JPH03231480A - Gas laser apparatus - Google Patents
Gas laser apparatusInfo
- Publication number
- JPH03231480A JPH03231480A JP2771990A JP2771990A JPH03231480A JP H03231480 A JPH03231480 A JP H03231480A JP 2771990 A JP2771990 A JP 2771990A JP 2771990 A JP2771990 A JP 2771990A JP H03231480 A JPH03231480 A JP H03231480A
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- nickel
- tantalum
- electrode
- alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 19
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 16
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 14
- 239000000956 alloy Substances 0.000 claims abstract description 14
- 238000002844 melting Methods 0.000 abstract description 11
- 230000008018 melting Effects 0.000 abstract description 11
- 229910052736 halogen Inorganic materials 0.000 abstract description 9
- 150000002367 halogens Chemical class 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 9
- 229910052731 fluorine Inorganic materials 0.000 abstract description 6
- 239000011737 fluorine Substances 0.000 abstract description 6
- 230000007797 corrosion Effects 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 abstract description 3
- 230000002250 progressing effect Effects 0.000 abstract description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- 239000011651 chromium Substances 0.000 description 11
- 229910000990 Ni alloy Inorganic materials 0.000 description 10
- 229910052684 Cerium Inorganic materials 0.000 description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 7
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 7
- 229910052712 strontium Inorganic materials 0.000 description 7
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000012423 maintenance Methods 0.000 description 6
- VMJRMGHWUWFWOB-UHFFFAOYSA-N nickel tantalum Chemical compound [Ni].[Ta] VMJRMGHWUWFWOB-UHFFFAOYSA-N 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021562 Chromium(II) fluoride Inorganic materials 0.000 description 2
- 229910021564 Chromium(III) fluoride Inorganic materials 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- RNFYGEKNFJULJY-UHFFFAOYSA-L chromium(ii) fluoride Chemical compound [F-].[F-].[Cr+2] RNFYGEKNFJULJY-UHFFFAOYSA-L 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000007751 thermal spraying Methods 0.000 description 2
- FTBATIJJKIIOTP-UHFFFAOYSA-K trifluorochromium Chemical compound F[Cr](F)F FTBATIJJKIIOTP-UHFFFAOYSA-K 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- HBCZDZWFGVSUDJ-UHFFFAOYSA-N chromium tantalum Chemical compound [Cr].[Ta] HBCZDZWFGVSUDJ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- -1 nickel halide Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/038—Electrodes, e.g. special shape, configuration or composition
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はガスレーザ装置に係り、特にエキシマレーザな
どの腐蝕性ガスをレーザ媒質に含むレーザの電極構造に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a gas laser device, and more particularly to an electrode structure of a laser such as an excimer laser containing a corrosive gas in the laser medium.
エキシマレーザは、波長が短い（例えばＫｒＦレーザの
波長は約２４８．４ ｎｌｌ１）ことから光露光の解像
度の限界を０．５μｍ以下に延ばせる可能性があること
、同じ解像度なら従来用いていた水銀ランプのｇ線やｉ
線に比較して焦点深度が深いこと、レンズの開口数（Ｎ
Ａ）が小さくてすみ、露光領域を大きくできること、大
きなパワーが得られること等の多くの優れた利点を備え
ていることから、半導体装置製造用の縮小投影露光装置
の光源等の産業用レーザとしての利用が注目されている
。Since excimer lasers have short wavelengths (for example, the wavelength of KrF lasers is about 248.4 nll1), it is possible to extend the resolution limit of optical exposure to 0.5 μm or less, and if the resolution is the same, it is possible to extend the resolution limit of conventional mercury lamps. g line and i
The depth of focus is deep compared to the line, and the numerical aperture of the lens (N
A) It has many excellent advantages such as being small, allowing a large exposure area, and being able to obtain high power, so it is suitable for industrial lasers such as light sources for reduction projection exposure equipment for semiconductor device manufacturing. The use of is attracting attention.
エキシマレーザ装置は、−例を第３図に示すように、発
振装置としてのチャンバ（図示せず）内に１対の主放電
電極１と予備電離電極２とを配設し、この主放電電極１
間にレーザ媒質としてのＫｒとＦ２．ＡｒとＦ２を含む
ガスなどを循環しっつ放電を生起し、放電エネルギーに
よって電極間に存在するレーザ媒質を励起し、レーザ光
を得るようにしたものである。An excimer laser device, for example, as shown in FIG. 1
Kr as a laser medium and F2. A gas containing Ar and F2 is circulated to generate a static discharge, and the discharge energy excites the laser medium existing between the electrodes to obtain laser light.
このようなエキシマレーザは、レーザ媒質として腐蝕性
のＭＣＩ、Ｆ２ガスなどを用いることから、容器などの
ガスと接する部分は、テフロン、ステンレス、ニッケル
などの耐ハロゲン性の高い材質で構成されており、主放
電電極１および予備電離電極２についても、耐ハロゲン
性を必要とするため通常ニッケルあるいはアルミニウム
をニッケル被覆したもの等が用いられている。Since such excimer lasers use corrosive MCI, F2 gas, etc. as the laser medium, the parts that come into contact with the gas, such as the container, are made of highly halogen-resistant materials such as Teflon, stainless steel, and nickel. As for the main discharge electrode 1 and the preliminary ionization electrode 2, nickel or aluminum coated with nickel is usually used because halogen resistance is required.
例えば、電極間距離を所定の値に設定したＮｉ電極を用
い、レーザ媒質としてＦ２ガスを含んだエキシマレーザ
装置を構成した場合、１０８回程度の発振で主放電電極
か消耗して、ステッパとして適正なエネルギーを持っレ
ーザ光を発振することができなくなっていた。For example, if an excimer laser device containing F2 gas as the laser medium is configured using Ni electrodes with a predetermined distance between the electrodes, the main discharge electrode will wear out after about 108 oscillations, making it unsuitable for use as a stepper. It was no longer possible to oscillate laser light with such energy.
これは、Ｎｉの融点が低いために放電によるスパッタリ
ングや電子衝撃により放電部が融解して、消耗するため
と考えれられる。This is thought to be because the melting point of Ni is low, and the discharge portion is melted and consumed by sputtering and electron impact caused by the discharge.
このように、ニッケルは、表面にハロゲンの不動態を作
るため、耐ハロゲン性は高いが、融点が１４５０℃程度
と低いため、放電部が融解し、消耗するため、耐久性が
低いという問題があった。In this way, nickel has high halogen resistance because it creates a passive state of halogen on its surface, but its melting point is as low as 1450°C, which causes the discharge part to melt and wear out, resulting in low durability. there were.
そこで、本出願人は、ガスレーザ装置の放電電極の耐久
性の向上をはかり、メインテナンス間隔を向上すること
を企図し、ガスレーザ装置の放電電極の少なくとも放電
部を、タンタル（Ｔａ）を主成分とし、これにクロム（
Ｃｒ）、セリウム（Ｃｅ）、ストロンチウム（Ｓ ｒ）
の内の少なくとも１つを含有してなる合金で構成したも
の、および放電電極の少なくとも放電部を、導電性の基
体表面を、主成分としてのタンタルと、クロム、セリウ
ム、ストロンチウムの内の少なくとも１元素とを含有す
る合金被膜で被覆することによって構成したものを提案
している。Therefore, in an attempt to improve the durability of the discharge electrode of a gas laser device and to improve the maintenance interval, the present applicant made at least the discharge part of the discharge electrode of the gas laser device mainly composed of tantalum (Ta). Add this to chrome (
Cr), cerium (Ce), strontium (Sr)
At least the discharge part of the discharge electrode is made of an alloy containing at least one of the following: tantalum as a main component, and at least one of chromium, cerium, and strontium. We have proposed a device constructed by coating with an alloy film containing the elements.
タンタルは融点が２８５０℃と高いため、上記構造では
放電による融解はほとんど皆無となる。Since tantalum has a high melting point of 2850° C., the above structure causes almost no melting due to electric discharge.
また、クロム、セリウム、ストロンチウムは、いずれも
フッ素等のハロゲンと反応して表面に不動態を形成する
ため、内部への腐蝕の進行を防止することができ、耐久
性が高く信頼性の高いガスレーザ装置を得ることが可能
となる。In addition, chromium, cerium, and strontium all react with halogens such as fluorine to form a passive state on the surface, which prevents corrosion from progressing to the inside, making the gas laser highly durable and reliable. It becomes possible to obtain the device.
（発明が解決しようとする課題）
これらの元素のうち、クロムは弗素と反応してＣｒＦ２
やＣｒＦ３等の不動態となり、放電部表面に耐弗素ガス
性を付与するという作用を有する。(Problem to be solved by the invention) Among these elements, chromium reacts with fluorine to form CrF2.
or CrF3, etc., and has the effect of imparting fluorine gas resistance to the surface of the discharge part.
しかしながら、このＣｒＦ２やＣｒＦ３は絶縁性物質で
あるため、Ｃｒ添加量が多くなり過ぎると絶縁性が高く
なり、破壊電圧が上昇して放電の生起を妨害することに
なる。However, since CrF2 and CrF3 are insulating substances, if the amount of Cr added is too large, the insulating properties will increase, the breakdown voltage will increase, and the occurrence of discharge will be hindered.
また、放電電圧が異常に高くなると、サイラトロンなど
レーザ装置の電気部品にダメージを与え、これら電気部
品の寿命の低下、あるいは破壊を招くことになる。Further, if the discharge voltage becomes abnormally high, it will damage the electrical parts of the laser device such as the thyratron, leading to a reduction in the lifespan or destruction of these electrical parts.
さらにまた、Ｃｒ添加量が少なくなり過ぎると、絶縁性
が高くなるのは防止することができるか、放電部表面の
不動態層が薄くなり、放電部の主成分であるタンタルが
弗素によって腐食されやすくなるという問題がある。Furthermore, if the amount of Cr added is too small, it may be possible to prevent the insulation from increasing, or the passive layer on the surface of the discharge section will become thinner, and tantalum, the main component of the discharge section, will be corroded by fluorine. The problem is that it becomes easier.
このように、Ｃｒ添加量の決定には十分な注意が必要と
なり、タンタル−クロム合金の製造工程におけるＣｒ含
有濃度の管理には細心の注意をはからねばならなかった
。As described above, sufficient care must be taken in determining the amount of Cr to be added, and great care must be taken in controlling the Cr content concentration in the tantalum-chromium alloy manufacturing process.
また、タンタルにセリウムやストロンチウムを添加した
合金の場合にもクロムと同様の問題がおこる。そのうえ
、セリウムやストロンチウムは希少元素であり高価であ
るため、コストの高騰を招くという問題もあった。Furthermore, the same problem as with chromium occurs in alloys in which cerium or strontium is added to tantalum. Furthermore, since cerium and strontium are rare and expensive elements, there is also the problem of rising costs.
本発明は、前記実情に鑑みてなされたもので、ハロゲン
に対する耐腐食性が高く、安価でかつ耐放電性の高い放
電電極を提供することを目的とする。The present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to provide a discharge electrode that is highly resistant to corrosion against halogens, is inexpensive, and has high discharge resistance.
（課題を解決するための手段）
そこで、本発明の第１では、ガスレーザ装置の放電電極
の少なくとも放電部を、タンタルとニッケルとを主成分
とする合金で構成するようにしている。(Means for Solving the Problems) Therefore, in a first aspect of the present invention, at least the discharge portion of the discharge electrode of the gas laser device is made of an alloy containing tantalum and nickel as main components.
また本発明の第２では、前記放電電極の少なくとも放電
部の表面を、タンタルとニッケルとを主成分とする合金
被膜で被覆することによって構成している。In a second aspect of the present invention, at least the surface of the discharge portion of the discharge electrode is coated with an alloy film containing tantalum and nickel as main components.
上記構成により、放電部の表面はいずれもタンタルとニ
ッケルとを主成分とする合金で構成されており、このう
ちタンタルは融点が２８５０℃と高いため、放電による
融解はほとんど皆無となる。With the above configuration, the surfaces of the discharge parts are all made of an alloy containing tantalum and nickel as main components, and since tantalum has a high melting point of 2850° C., there is almost no melting due to discharge.
また、ニッケルは弗素等のハロゲンと反応して表面に不
動性であるハロゲン化ニッケルを形成するため、内部へ
の腐蝕の進行を防止することができる。Furthermore, since nickel reacts with halogens such as fluorine to form immobile nickel halide on the surface, it is possible to prevent corrosion from progressing to the inside.
そしてまたこのノ＼ロケン化ニッケルは、前述シたよう
なりロム、セリウム、ストロンチウム等のハロゲン化物
に比べて絶縁性が低い上、放電によって蒸発せしめられ
やすいため、放電部表面を絶縁化しにくいという利点を
有している。Another advantage of nickel saponide is that it has lower insulating properties than halides such as chromium, cerium, and strontium, as mentioned above, and is easily evaporated by discharge, making it difficult to insulate the surface of the discharge part. have.
このため、クロム、セリウム、ストロンチウム等を添加
物として用いた場合のような厳密な元素濃度管理を必要
としない。Therefore, there is no need for strict element concentration control as in the case of using chromium, cerium, strontium, etc. as additives.
このようにして、耐久性が高く信頼性の高いガスレーザ
装置を安価に得ることが可能となる。In this way, a highly durable and reliable gas laser device can be obtained at low cost.
（実施例）
以下本発明の実施例について図面を参照しつつ詳細に説
明する。(Example) Examples of the present invention will be described in detail below with reference to the drawings.
実施例１
第１図は、本発明の第１の実施例の紫外線予備電離型の
エキシマレーザ装置の電極部を示す図である。Embodiment 1 FIG. 1 is a diagram showing an electrode section of an ultraviolet pre-ionization type excimer laser device according to a first embodiment of the present invention.
レーザチャンバ（図示せず）内に配設されたテフロン樹
脂からなる電極支持部１ｏに一対の主放電電極１１と、
この主放電電極１１の両側にそれぞれ一対の予備電離電
極１２が配設されてなり、これら主放電電極および予備
電離電極はステンレスからなる本体部１１ｍ、１２ｍと
本体部１１ｍ。A pair of main discharge electrodes 11 are provided on an electrode support part 1o made of Teflon resin disposed in a laser chamber (not shown),
A pair of preliminary ionization electrodes 12 are arranged on both sides of the main discharge electrode 11, and these main discharge electrodes and preliminary ionization electrodes are made of stainless steel and have main body parts 11m and 12m and a main body part 11m.
１２ｍの先端に配設されたタンタル−ニッケル合金（Ｔ
ａ−２，５％Ｎｉ合金）からなる放電部１１ｃ、１２ｃ
とから構成されている。Tantalum-nickel alloy (T
Discharge parts 11c and 12c made of a-2.5% Ni alloy)
It is composed of.
この放電部は電子ビーム融解法により材料を融解してタ
ンタル−ニッケル合金を形成し、これを所望の形状に形
状加工し、本体部に接合することによって形成される。This discharge part is formed by melting a material using an electron beam melting method to form a tantalum-nickel alloy, processing this into a desired shape, and joining it to the main body.
このエキシマレーザ装置は、まず予備電離電極１２間に
電圧を印加しつつ、予備電離を行い、続いて主放電電極
間に放電を生起せしめ、主放電電極間に供給されるＫｒ
とＦ２を含むレーザ媒質ガスを励起し発振を行うように
構成したものである。This excimer laser device first performs preliminary ionization while applying a voltage between the preliminary ionization electrodes 12, then generates a discharge between the main discharge electrodes, and supplies Kr between the main discharge electrodes.
This device is configured to excite a laser medium gas containing F2 and oscillate.
このエキシマレーザ装置では、長時間にわたって安定な
発振を持続することができ、その消耗量は第３図に示し
たＮｉ電極を用いた従来例の装置に比べ１／１０程度と
なっており、耐久性が大幅に向上していることが分かる
。This excimer laser device can sustain stable oscillation for a long time, and its consumption is about 1/10 compared to the conventional device using Ni electrodes shown in Figure 3, making it durable. It can be seen that the performance has been significantly improved.
なお、ここでタンタル−ニッケル合金は電子ビム融解法
によって形成したが、焼結法やアーク融解法等を用いて
形成しても良い。Although the tantalum-nickel alloy is formed by the electron beam melting method here, it may also be formed by a sintering method, an arc melting method, or the like.
実施例２ 次に、本発明の第２の実施例について説明する。Example 2 Next, a second embodiment of the present invention will be described.
第２図は、本発明の第２の実施例の紫外線予備電離型の
エキシマレーザ装置の電極部を示す図である。FIG. 2 is a diagram showing an electrode section of an ultraviolet pre-ionization type excimer laser device according to a second embodiment of the present invention.
前記実施例１においてはステンレスからなる本体部１１
ｍ、１２ｍの先端にタンタル−ニッケル合金（Ｔａ−２
，５％Ｎｉ合金）からなる放電部１１ｃ、１２ｃを接合
することによって電極を形成したが、この装置では、主
放電電極２１、予備電離電極２２共に、ステンレスで構
成し、先端の放電部に相当する領域の表面をタンタル−
ニッケル合金（Ｔａ−２，５％Ｎ１合金）被膜２３で被
覆するようにしたことを特徴とするもので、他部につい
ては実施例１と同様に構成する。２０は電極支持部であ
る。なお、このタンタル−ニッケル合金被膜２３は溶融
塩法や溶射法等によって容易に形成することができる。In the first embodiment, the main body 11 is made of stainless steel.
Tantalum-nickel alloy (Ta-2
The electrodes were formed by joining the discharge parts 11c and 12c made of 5% Ni alloy), but in this device, both the main discharge electrode 21 and the preliminary ionization electrode 22 are made of stainless steel, and correspond to the discharge part at the tip. The surface of the area to be tantalum
It is characterized in that it is coated with a nickel alloy (Ta-2,5%N1 alloy) film 23, and the other parts are constructed in the same manner as in the first embodiment. 20 is an electrode support part. Note that this tantalum-nickel alloy coating 23 can be easily formed by a molten salt method, a thermal spraying method, or the like.
この被膜は、溶融塩法や溶射法により、タンタル−ニッ
ケル合金でステンレスからなる主放電電極および予備電
離電極の放電部の表面を被覆することよって容易に形成
される。This coating is easily formed by coating the surfaces of the discharge parts of the main discharge electrode and the pre-ionization electrode made of stainless steel with a tantalum-nickel alloy by a molten salt method or a thermal spraying method.
この場合も前記実施例１の場合と同様、長寿命で信頼性
の高いものとなっている。In this case as well, as in the case of Example 1, the device has a long life and high reliability.
なお、前記第１および第２の実施例ではいずれもＴ ａ
−２，５％Ｎｉ合金を放電部に用いるようにしたが、
この組成比については適宜変更可能であり、さらに他の
材料を含有していても良いことはいうまでもない。In addition, in both the first and second embodiments, T a
-2.5% Ni alloy was used for the discharge part, but
It goes without saying that this composition ratio can be changed as appropriate, and that other materials may also be included.
また、前記実施例では、ＫｒＦエキシマレーザについて
説明したが、高腐蝕性のガスをレーザ媒質として用いる
ガスレーザ全般に適用可能である。Further, in the above embodiments, a KrF excimer laser was described, but the present invention is applicable to any gas laser that uses a highly corrosive gas as a laser medium.
以上説明したように、本発明のガスレーザ装置によれば
、放電電極の少なくとも放電部表面を、タンタルおよび
ニッケルを主成分とする合金て構成するようにしている
ため、合金の組成比を厳密にコントロールすることなく
容易に形成することができるうえ、従来のＮ１放電電極
を用いた場合に比べ、電極寿命か１０倍以上に延び、メ
インテナンス機能が向上すると共に、耐久性が高く信頼
性の高いガスレーザ装置を得ることが可能となる。As explained above, according to the gas laser device of the present invention, at least the surface of the discharge part of the discharge electrode is made of an alloy whose main components are tantalum and nickel, so the composition ratio of the alloy is strictly controlled. In addition to being easy to form, the electrode life is more than 10 times longer than when using conventional N1 discharge electrodes, improving maintenance functions, and providing a highly durable and reliable gas laser device. It becomes possible to obtain.
さらに腐蝕性の高い雰囲気中でも安定した高圧放電を繰
り返し行うことか可能となる。Furthermore, it becomes possible to repeatedly perform stable high-pressure discharge even in a highly corrosive atmosphere.
従って、本発明のレーザ装置、特にエキシマレーザ装置
においてはメンテナンス間隔を決定していた電極寿命が
著しく伸長するため、装置全体のメンテナンス間隔が著
しく伸長し、産業用エキシマレーザの要求仕様であるメ
ンテナンス間隔１×１０９シヨツト以上を十分に満たす
ことが可能となる。Therefore, in the laser device of the present invention, especially in the excimer laser device, the life of the electrode that determines the maintenance interval is significantly extended, so the maintenance interval for the entire device is significantly extended, and the maintenance interval, which is the required specification for industrial excimer lasers, is significantly extended. It becomes possible to fully satisfy the requirement of 1×109 shots or more.
また、結果として装置のメンテナンス回数、メンテナン
スに要する費用の低減をはかることも可能となる。Furthermore, as a result, it is also possible to reduce the number of times the device is maintained and the cost required for maintenance.
第１図は本発明の第１の実施例のガスレーザ装置の電極
部を示す図、第２図は本発明の第２の実施例のガスレー
ザ装置の電極部を示す図、第３図は従来例のガスレーザ
装置の電極部を示す図である。
１・・・主放電電極、２・・・予ｍ電離電極、１０・・
・電極支持部、１１・・・主放電電極、１２・・予備電
離電極、ｌ１ｍ・・・主放電電極本体部、１２ｍ・・・
予Ｉｉ！電離電極本体部、１１Ｃ・・・主放電電極放電
部、１２Ｃ・予備電離電極放電部、２０・・・電極支持
部、２１・・・主放電電極、
２・・・予備電離電極、
３・・・被
膜。
第２
図FIG. 1 is a diagram showing an electrode section of a gas laser device according to a first embodiment of the present invention, FIG. 2 is a diagram showing an electrode section of a gas laser device according to a second embodiment of the present invention, and FIG. 3 is a diagram showing a conventional example. FIG. 3 is a diagram showing an electrode section of the gas laser device. 1... Main discharge electrode, 2... Pre-ionization electrode, 10...
- Electrode support part, 11... Main discharge electrode, 12... Pre-ionization electrode, l1m... Main discharge electrode main body part, 12m...
Preliminary Ii! Ionization electrode main body part, 11C... Main discharge electrode discharge part, 12C... Preliminary ionization electrode discharge part, 20... Electrode support part, 21... Main discharge electrode, 2... Preliminary ionization electrode, 3...・Coating. Figure 2
Claims (2)
てレーザガスを励起しレーザ光を発するようにしたガス
レーザ装置において、 前記放電電極の少なくとも放電部を、タンタル（Ｔａ）
とニッケル（Ｎｉ）とを主成分とする合金で構成したこ
とを特徴とするガスレーザ装置。(1) In a gas laser device that generates a discharge between discharge electrodes disposed in a container to excite laser gas and emit laser light, at least the discharge portion of the discharge electrode is made of tantalum (Ta).
A gas laser device characterized in that it is constructed of an alloy whose main components are nickel (Ni) and nickel (Ni).
てレーザガスを励起しレーザ光を発するようにしたガス
レーザ装置において、 前記放電電極が、導電性の基体からなり、少なくともそ
の放電部は、タンタルとニッケルとを主成分とする合金
被膜で被覆されていることを特徴とするガスレーザ装置
。(2) In a gas laser device that generates a discharge between discharge electrodes disposed in a container to excite laser gas and emit laser light, the discharge electrode is made of a conductive base, and at least the discharge portion thereof is , a gas laser device characterized by being coated with an alloy film containing tantalum and nickel as main components.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2771990A JPH03231480A (en) | 1990-02-07 | 1990-02-07 | Gas laser apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2771990A JPH03231480A (en) | 1990-02-07 | 1990-02-07 | Gas laser apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03231480A true JPH03231480A (en) | 1991-10-15 |
Family
ID=12228819
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2771990A Pending JPH03231480A (en) | 1990-02-07 | 1990-02-07 | Gas laser apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03231480A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6810061B2 (en) * | 2001-08-27 | 2004-10-26 | Komatsu Ltd. | Discharge electrode and discharge electrode manufacturing method |
| US7006546B2 (en) * | 2000-03-15 | 2006-02-28 | Komatsu Ltd. | Gas laser electrode, laser chamber employing the electrode, and gas laser device |
| US7706424B2 (en) | 2005-09-29 | 2010-04-27 | Cymer, Inc. | Gas discharge laser system electrodes and power supply for delivering electrical energy to same |
-
1990
- 1990-02-07 JP JP2771990A patent/JPH03231480A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7006546B2 (en) * | 2000-03-15 | 2006-02-28 | Komatsu Ltd. | Gas laser electrode, laser chamber employing the electrode, and gas laser device |
| US6810061B2 (en) * | 2001-08-27 | 2004-10-26 | Komatsu Ltd. | Discharge electrode and discharge electrode manufacturing method |
| US7706424B2 (en) | 2005-09-29 | 2010-04-27 | Cymer, Inc. | Gas discharge laser system electrodes and power supply for delivering electrical energy to same |
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