JPH03229415A - Method of dry-cleaning semiconductor device - Google Patents
Method of dry-cleaning semiconductor deviceInfo
- Publication number
- JPH03229415A JPH03229415A JP2532190A JP2532190A JPH03229415A JP H03229415 A JPH03229415 A JP H03229415A JP 2532190 A JP2532190 A JP 2532190A JP 2532190 A JP2532190 A JP 2532190A JP H03229415 A JPH03229415 A JP H03229415A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- film
- silicon film
- heavy metal
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000005108 dry cleaning Methods 0.000 title claims abstract description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 239000010703 silicon Substances 0.000 claims abstract description 48
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910001385 heavy metal Inorganic materials 0.000 claims abstract description 28
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 13
- 239000000460 chlorine Substances 0.000 claims abstract description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 11
- 230000001443 photoexcitation Effects 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 18
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 9
- 238000005247 gettering Methods 0.000 abstract description 2
- 239000000356 contaminant Substances 0.000 abstract 1
- 238000007669 thermal treatment Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 47
- 238000011109 contamination Methods 0.000 description 7
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 7
- 229910052753 mercury Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910001510 metal chloride Inorganic materials 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
［概要〕
本発明は、シリコン酸化膜の表面のドライクリーニング
方法に関し。DETAILED DESCRIPTION OF THE INVENTION [Summary] The present invention relates to a method for dry cleaning the surface of a silicon oxide film.
シリコン酸化膜表面の重金属汚染を塩素ラジカルを用い
て効果的に除去することを目的とし。The aim is to effectively remove heavy metal contamination on the surface of silicon oxide films using chlorine radicals.
半導体基板上に被覆した二酸化シリコン膜上に。On a silicon dioxide film coated on a semiconductor substrate.
シリコン系のガスを用いて、薄＜シリコン膜中堆積し、
塩素ラジカルを作用させて該シリコン膜を完全にエツチ
ングして、該二酸化シリコン膜上の重金属を除去するよ
うに。Deposited in a thin silicon film using silicon-based gas,
The silicon film is completely etched by using chlorine radicals to remove heavy metals on the silicon dioxide film.
光励起反応により塩素のラジカルを発生させてシリコン
膜の堆積と該シリコン膜のエンチングを連続して行うよ
うに。The deposition of a silicon film and the etching of the silicon film are performed successively by generating chlorine radicals through a photoexcitation reaction.
二酸化シリコン膜上にシリコン膜を堆積した後。After depositing a silicon film on the silicon dioxide film.
熱処理を行い１重金属を該シリコン膜中にゲッタリング
した後、該シリコン膜を完全にエツチングするように構
成する。After heat treatment is performed to getter a heavy metal into the silicon film, the silicon film is completely etched.
〔産業上の利用分野］
本発明は、シリコン酸化膜の表面のドライクリニング方
法に関する。[Industrial Application Field] The present invention relates to a method for dry cleaning the surface of a silicon oxide film.
近年、ＬＳＩの高集積化、微細化が著しいが。In recent years, the integration and miniaturization of LSIs have been remarkable.
ＬＳＩが微細化していくと、これまでは問題にならなか
ったレベルの汚染の影響を受けるようになる。As LSIs become smaller, they will be affected by contamination at a level that was not a problem in the past.
ことに、プロセスの途中に入り込む微量の重金属は、素
子の特性に様々な悪影響を及ぼす。例えば、ＭＯＳデバ
イスではゲート酸化膜表面の重金属汚染が、しきい値電
圧の変動や耐圧の劣化を引き起こす。In particular, trace amounts of heavy metals that enter during the process have various adverse effects on the characteristics of the device. For example, in a MOS device, heavy metal contamination on the surface of a gate oxide film causes fluctuations in threshold voltage and deterioration in breakdown voltage.
このため、適当な方法で半導体基板の表面をクリーニン
グする必要がある。Therefore, it is necessary to clean the surface of the semiconductor substrate using an appropriate method.
〔従来の技術］
従来、シリコン基板表面の重金属ドライクリーニング方
法としては、塩素ガスのラジカルを用いることが有力で
、研究が進められている。[Prior Art] Conventionally, as a method for dry cleaning heavy metals on the surface of a silicon substrate, the use of chlorine gas radicals has been effective, and research is progressing.
このクリーニング方法はシリコンを塩素ラジカルで薄く
エツチングすることで１表面の重金属を除去すると考え
られている。その際３表面の重金属は塩素ラジカルと結
合して、蒸気圧の高い塩化物となって気化する。This cleaning method is thought to remove heavy metals from one surface by thinly etching silicon with chlorine radicals. At this time, the heavy metals on the 3 surfaces combine with chlorine radicals to become chlorides with high vapor pressure and vaporize.
ところで、塩素ラジカルによるエツチングでは。By the way, etching with chlorine radicals.
シリコンはエツチングはできるものの、シリコン酸化膜
は殆どエツチングがされない。Although silicon can be etched, a silicon oxide film is hardly etched.
従って、シリコン酸化膜の表面の重金属汚染の除去は塩
素ラジカルでは効果が表れにくい。Therefore, chlorine radicals are hardly effective in removing heavy metal contamination from the surface of a silicon oxide film.
〔発明が解決しようとする課題］
従って、シリコン酸化膜表面のクリーニングには大きな
効果が得られにくい。[Problems to be Solved by the Invention] Therefore, it is difficult to obtain a great effect in cleaning the surface of the silicon oxide film.
本発明は、シリコン酸化膜表面の重金属汚染を塩素ガス
のラジカルを用いて効果的に除去する方法を提供するこ
とである。The present invention provides a method for effectively removing heavy metal contamination on the surface of a silicon oxide film using chlorine gas radicals.
第１図は本発明の原理説明図である。 FIG. 1 is a diagram explaining the principle of the present invention.
図において、１は半導体基板、２はＳｉ０ｇ膜、３は重
金属、４はシリコン、５はシリコン膜、６は塩素ラジカ
ル、７は四塩化珪素、８は金属塩化物である。In the figure, 1 is a semiconductor substrate, 2 is a Si0g film, 3 is a heavy metal, 4 is silicon, 5 is a silicon film, 6 is a chlorine radical, 7 is silicon tetrachloride, and 8 is a metal chloride.
上記の問題点は、半導体基板１上に被覆した二酸化シリ
コン膜２上に、まずＣＶＤ （化学気相成長法）で、シ
リコン系のガス４を用いて、薄くシリコン膜５を堆積し
、それから、光励起反応による塩素ラジカル６を作用さ
せて該シリコン膜を完全にエンチングして、該二酸化シ
リコン膜２上の重金属３を除去することにより、また、
同一反応室内で光励起反応によりシリコン系のガス４を
励起させて、シリコン膜５の堆積を行い、続いて光励起
反応による塩素ガスを用いて、該シリコン膜５のエツチ
ングを同時に行うことにより、或いは。The above problem is solved by first depositing a thin silicon film 5 on the silicon dioxide film 2 coated on the semiconductor substrate 1 by CVD (chemical vapor deposition) using a silicon-based gas 4, and then By completely etching the silicon film by using chlorine radicals 6 caused by a photoexcitation reaction and removing the heavy metal 3 on the silicon dioxide film 2,
By exciting the silicon-based gas 4 by photoexcitation reaction in the same reaction chamber to deposit the silicon film 5, and then simultaneously etching the silicon film 5 using chlorine gas caused by the photoexcitation reaction.
二酸化シリコン膜２上にシリコン膜５を堆積した後、熱
処理を行い９重金属３を該シリコン膜５中にゲッタリン
グした後、該シリコン膜５をゲッタリングして、該二酸
化シリコン膜２上の重金属３を除去することにより、ま
た、同−反応室内型で完全にエツチングすることにより
解決される。After a silicon film 5 is deposited on the silicon dioxide film 2, a heat treatment is performed to getter the heavy metal 3 into the silicon film 5, and then the silicon film 5 is gettered to remove the heavy metals on the silicon dioxide film 2. 3 and by complete etching in the same reaction chamber.
［作用〕
本発明では、薄いシリコン膜を形成し、その中に重金属
等の汚染を取込み、シリコン膜毎エツチングして重金属
を完全に除去してしまう。[Operation] In the present invention, a thin silicon film is formed, contamination such as heavy metals is taken into the film, and the entire silicon film is etched to completely remove the heavy metals.
第２図は本発明の第１の実施例の説明図、第３図は本発
明の第２の実施例の説明図である。FIG. 2 is an explanatory diagram of the first embodiment of the invention, and FIG. 3 is an explanatory diagram of the second embodiment of the invention.
図において、９は反応管、１０は基板ホルダー１１は基
板、１２はヒーター、 １３はガス導入口、１４は排気
口、１５は反応チャンバ、１６は高圧水銀ランプ。In the figure, 9 is a reaction tube, 10 is a substrate holder 11, 12 is a heater, 13 is a gas inlet, 14 is an exhaust port, 15 is a reaction chamber, and 16 is a high-pressure mercury lamp.
１７はヒーター、１８はガス導入口、１９は排気口、２
０は反応チャンバ、２１は高圧水銀ランプ、２２はヒー
ター、２３はシランガス導入口、２４は塩素ガス導入口
、２５は排気口である。17 is a heater, 18 is a gas inlet, 19 is an exhaust port, 2
0 is a reaction chamber, 21 is a high-pressure mercury lamp, 22 is a heater, 23 is a silane gas inlet, 24 is a chlorine gas inlet, and 25 is an exhaust port.
第１の実施例について説明する。A first example will be described.
第２図（ａ）に示すように４通常のＣＶＤ装置を用いて
、半導体の基板１１として１例えばＳｉ基板上にゲート
用の５ｉＯｚ膜を形成した表面に、シリコン膜の堆積を
熱ＣＶＤ法により行う。As shown in FIG. 2(a), using a normal CVD apparatus, a silicon film is deposited by thermal CVD on the surface of a semiconductor substrate 11, for example, a 5iOz film for a gate formed on a Si substrate. conduct.
まず、基板ホルダー１０上に樅に十数枚セントした基板
１１を４００〜６００°Ｃ程度の基板温度で、シランガ
ス（ＳｉＨａ）を１．０００５ｅｃｓ＋の流量で２分間
流し。First, about ten substrates 11 were placed on the substrate holder 10 at a substrate temperature of about 400 to 600° C., and silane gas (SiHa) was flowed at a flow rate of 1.0005 ecs+ for 2 minutes.
Ｓｉｎ、膜上にＩｏｎｍ程度の膜厚の５ｉｆｌ膜を堆積
させる。A 5ifl film having a thickness of approximately 100 nm is deposited on the Sin film.
次に、第２図（ｂ）に示すように、光励起塩素エツチン
グ装置により、 ５ｉｉｌ膜をエツチングする。Next, as shown in FIG. 2(b), the 5iI film is etched using a photo-excited chlorine etching device.
この装置は、高圧水銀ランプ１６と基板１１を加熱する
ヒーター１２と塩素ガスの導入口１３とガスの排気口１
４とより構成されている。This device consists of a high-pressure mercury lamp 16, a heater 12 for heating a substrate 11, a chlorine gas inlet 13, and a gas exhaust port 1.
It consists of 4.
このエツチング装置において、塩素ガスの流量を５０ｓ
ｅｃｍ、反応チャンバ１５の内圧を２０Ｔｏｒｒの状態
で、基板１１の温度を４００°Ｃ程度にし、高圧水銀ラ
ンプ１６を反応チャンバ１５内に３０秒照射すると、紫
外線により塩素ガスが光励起されて、塩素ラジカルとな
り、 １０ｒ＋＋＋＋の膜圧のＳｉ膜はその中に取り込
まれた重金属と共に完全にエツチング除去されて清浄な
表面のＳｉ０ｇ膜が得られる
次に、第２の実施例について説明する。In this etching apparatus, the flow rate of chlorine gas was set to 50 seconds.
ecm, when the internal pressure of the reaction chamber 15 is 20 Torr, the temperature of the substrate 11 is about 400°C, and the high-pressure mercury lamp 16 is irradiated into the reaction chamber 15 for 30 seconds, chlorine gas is photoexcited by ultraviolet rays and chlorine radicals are generated. Then, the Si film with a film thickness of 10r++++ is completely etched away together with the heavy metals incorporated therein to obtain a Si0g film with a clean surface.Next, a second embodiment will be described.
即ち、第３図に示すのは本発明によるクリーニング方法
を応用した装置である。この装置は一つの反応チャンバ
２０にシランガス導入口２３と塩素ガス導入口２４とを
設けであるのを特徴とし、前述の本発明の二つのプロセ
スを続けて同一装置内にて実施するものである。That is, what is shown in FIG. 3 is an apparatus to which the cleaning method according to the present invention is applied. This apparatus is characterized in that one reaction chamber 20 is provided with a silane gas inlet 23 and a chlorine gas inlet 24, and the two processes of the present invention described above are carried out consecutively in the same apparatus. .
先ず、シリコン薄膜の堆積を光ＣＶＤ法で行う。First, a silicon thin film is deposited by photo-CVD.
３００〜４００°Ｃ程度の基板温度で、シランガス導入
口２３からシランガスを６０ｓｃｃ鵬の流量で流し、そ
こに高圧水銀ランプ２１から紫外線を２分間９及応チャ
ンバ２０内に照射することで、 ５ｉ（ｈ膜上に１０ｎ
ｍ程度の膜厚のＳｉ薄膜を堆積させる。5i ( 10n on h membrane
A Si thin film with a thickness of approximately 100 m is deposited.
その後、ガスの排気口２５から残留シランガスをドライ
ポンプで引き排出する。Thereafter, residual silane gas is drawn and discharged from the gas exhaust port 25 using a dry pump.
次に、塩素ガス導入口２４から、塩素ガスの流量を５０
ｓｅｃｍ−乙内圧２０Ｔｏｒｒにし１基板１１の温度を
ヒーター２２により４００°Ｃ程度に加熱し、高圧水銀
ランプ２１から紫外線を３０秒間１反応チャンバ内に照
射することで、 ＩｏｎｓのＳｉ薄膜を完全にエツチン
グして、清浄な５ｉＯｚ膜の表面が得られる。Next, from the chlorine gas inlet 24, increase the flow rate of chlorine gas to 50%.
The Si thin film of Ions is completely etched by setting the internal pressure to 20 Torr, heating the substrate 11 to about 400°C using the heater 22, and irradiating the reaction chamber with ultraviolet light from the high-pressure mercury lamp 21 for 30 seconds. As a result, a clean 5iOz membrane surface is obtained.
更に、Ｓｉｌ膜を１０ｎｍ堆積した後に、熱処理を行う
ことにより、 Ｓｉ膜中に重金属を積極的に取り込ませ
て、いわゆるゲッタリングを行った場合には、そのクリ
ーニング効果がより増大する。Furthermore, if a heat treatment is performed after depositing a 10 nm Sil film to actively incorporate heavy metals into the Si film, so-called gettering, the cleaning effect will be further enhanced.
〔発明の効果］ 本発明によるドライクリーニング処理により。〔Effect of the invention] By dry cleaning treatment according to the invention.
半導体基板上に被覆した二酸化シリコン膜の表面上の重
金属汚染を完全に除去でき、ＭＯＳ等の半導体装置の品
質向上に大きく寄与することができる。Heavy metal contamination on the surface of a silicon dioxide film coated on a semiconductor substrate can be completely removed, making it possible to greatly contribute to improving the quality of semiconductor devices such as MOS.
第１図は本発明の原理説明図。
第２図は本発明の第１の実施例の説明図第３図は本発明
の第２の実施例の説明図。
図において。
１は半導体基板。
３は重金属。
５はＳｉ膜。
７は５ｉＣｆ＋。
９は反応管。
２はＳｉＯ２膜
４はＳｉ。
６はＣＩ！。
８は金属塩化物。
１０は基板ホルダー
１１は基板、１２はヒーター
１３はガス導入口、１４は排気口。
１５は反応チャンバ、１６は高圧水銀ランプ。
１７はヒーター、１８はガス導入口。
１９は排気口、 ２０は反応チャンバ。
２１は高圧水銀ランプ、２２はヒーター２３はシランガ
ス導入口。
２４は塩素ガス導入口、２５は排気口
杢ｊｔ８月の厘裡説日目序］
第 １７
［＝＝＝＝＝＝巨巨＝＝＝ヨヨヨヨ＝＝〒巨＝＝＝＝：
＝＝コーフ２．１ニー５’−で
［FIG. 1 is a diagram explaining the principle of the present invention. FIG. 2 is an explanatory diagram of a first embodiment of the present invention. FIG. 3 is an explanatory diagram of a second embodiment of the present invention. In fig. 1 is a semiconductor substrate. 3 is heavy metal. 5 is a Si film. 7 is 5iCf+. 9 is a reaction tube. 2, the SiO2 film 4 is Si. 6 is CI! . 8 is a metal chloride. 10 is a substrate holder 11, 12 is a heater 13, a gas inlet, and 14 is an exhaust port. 15 is a reaction chamber, and 16 is a high-pressure mercury lamp. 17 is a heater, 18 is a gas inlet. 19 is an exhaust port, and 20 is a reaction chamber. 21 is a high pressure mercury lamp, 22 is a heater 23 is a silane gas inlet. 24 is the chlorine gas inlet, 25 is the exhaust port. Preface to August's lecture] No. 17 [======Giant===Yoyoyoyo==〒Giant====:
== Korf 2.1 knee 5'- [
Claims (1)
２）上に、シリコン系のガス（４）を用いて、薄くシリ
コン膜（５）を堆積し、塩素ラジカル（６）を作用させ
て該シリコン膜（５）を完全にエッチングして、該二酸
化シリコン膜（２）上の重金属（３）を除去することを
特徴とする半導体装置のドライクリーニング方法。 ２）光励起反応により塩素のラジカル（６）を発生させ
て、シリコン膜（５）の堆積と該シリコン膜（５）のエ
ッチングを連続して行うことを特徴とする請求項１記載
の半導体装置のドライクリーニング方法。 ３）二酸化シリコン膜（２）上にシリコン膜（５）を堆
積した後、熱処理を行い、重金属（３）を該シリコン膜
（５）中にゲッタリングした後、該シリコン膜（５）を
完全にエッチングすることを特徴とする請求項１記載の
半導体装置のドライクリーニング方法。[Claims] 1) A silicon dioxide film (
2) A thin silicon film (5) is deposited on top using a silicon-based gas (4), and the silicon film (5) is completely etched by the action of chlorine radicals (6). A method for dry cleaning a semiconductor device, characterized by removing heavy metals (3) on a silicon film (2). 2) The semiconductor device according to claim 1, characterized in that the deposition of the silicon film (5) and the etching of the silicon film (5) are performed successively by generating chlorine radicals (6) through a photoexcitation reaction. Dry cleaning method. 3) After depositing a silicon film (5) on the silicon dioxide film (2), heat treatment is performed to getter the heavy metal (3) into the silicon film (5), and then the silicon film (5) is completely removed. 2. The method of dry cleaning a semiconductor device according to claim 1, further comprising etching the semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2532190A JP2874241B2 (en) | 1990-02-05 | 1990-02-05 | Dry cleaning method for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2532190A JP2874241B2 (en) | 1990-02-05 | 1990-02-05 | Dry cleaning method for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03229415A true JPH03229415A (en) | 1991-10-11 |
| JP2874241B2 JP2874241B2 (en) | 1999-03-24 |
Family
ID=12162717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2532190A Expired - Lifetime JP2874241B2 (en) | 1990-02-05 | 1990-02-05 | Dry cleaning method for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2874241B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5789284A (en) * | 1994-09-29 | 1998-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating semiconductor thin film |
| US6331457B1 (en) | 1997-01-24 | 2001-12-18 | Semiconductor Energy Laboratory., Ltd. Co. | Method for manufacturing a semiconductor thin film |
| KR20020041180A (en) * | 2000-11-27 | 2002-06-01 | 윤종용 | Method for cleaning semiconductor device |
| US6399454B1 (en) | 1997-07-14 | 2002-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device |
| US6664144B2 (en) | 1997-07-14 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming a semiconductor device using a group XV element for gettering by means of infrared light |
| USRE43450E1 (en) | 1994-09-29 | 2012-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating semiconductor thin film |
-
1990
- 1990-02-05 JP JP2532190A patent/JP2874241B2/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5789284A (en) * | 1994-09-29 | 1998-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating semiconductor thin film |
| US6071766A (en) * | 1994-09-29 | 2000-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating semiconductor thin film |
| USRE38266E1 (en) | 1994-09-29 | 2003-10-07 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating semiconductor thin film |
| USRE43450E1 (en) | 1994-09-29 | 2012-06-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for fabricating semiconductor thin film |
| US6991976B2 (en) | 1996-01-23 | 2006-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor thin film |
| US7553716B2 (en) | 1996-01-23 | 2009-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor thin film |
| US6331457B1 (en) | 1997-01-24 | 2001-12-18 | Semiconductor Energy Laboratory., Ltd. Co. | Method for manufacturing a semiconductor thin film |
| US6399454B1 (en) | 1997-07-14 | 2002-06-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor film and method of manufacturing a semiconductor device |
| US6664144B2 (en) | 1997-07-14 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming a semiconductor device using a group XV element for gettering by means of infrared light |
| US7026197B2 (en) | 1997-07-14 | 2006-04-11 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
| KR20020041180A (en) * | 2000-11-27 | 2002-06-01 | 윤종용 | Method for cleaning semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2874241B2 (en) | 1999-03-24 |
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