JPH03224224A - Dry etching - Google Patents
Dry etchingInfo
- Publication number
- JPH03224224A JPH03224224A JP1941690A JP1941690A JPH03224224A JP H03224224 A JPH03224224 A JP H03224224A JP 1941690 A JP1941690 A JP 1941690A JP 1941690 A JP1941690 A JP 1941690A JP H03224224 A JPH03224224 A JP H03224224A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- wafer
- gas
- optimum value
- distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 title claims description 7
- 238000005530 etching Methods 0.000 claims abstract description 83
- 238000009826 distribution Methods 0.000 claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 5
- 235000012431 wafers Nutrition 0.000 abstract description 34
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
半導体装置の製造等に用いらるドライエツチング方法に
関し。[Detailed Description of the Invention] [Summary] This invention relates to a dry etching method used in the manufacture of semiconductor devices.
異なるエツチング条件ごとに、ウェハ内のエツチングレ
ート分布を均一化することを目的とし。The purpose is to equalize the etching rate distribution within the wafer under different etching conditions.
エツチングガス種、総ガス量、ガス圧、印加電力、ウェ
ハサイズを固定した一定のエツチング条件の下で、エツ
チングガスを分配弁を経由して複数個所に設けられた吹
き出し口よりウェハ上に導入し、該分配弁により各吹き
出し口のエツチングガス流量を振って試行ウェハのエツ
チングを行って該試行ウェハ内のエツチングレート分布
が均一化する最適値を求め、各吹き出し口の流量を該最
適値に設定して製造用ウェハのエツチングを行うように
構成する。Under certain etching conditions in which the type of etching gas, total gas amount, gas pressure, applied power, and wafer size are fixed, the etching gas is introduced onto the wafer from multiple outlets provided at multiple locations via a distribution valve. , perform etching on a trial wafer by changing the etching gas flow rate of each outlet using the distribution valve, find the optimum value that makes the etching rate distribution uniform within the trial wafer, and set the flow rate of each outlet to the optimum value. The device is configured to perform etching of manufacturing wafers.
〔産業上の利用分野］
本発明は半導体装置の製造等に用いらるドライエツチン
グ方法に関する。[Industrial Application Field] The present invention relates to a dry etching method used in the manufacture of semiconductor devices.
近年、半導体の微細加工精度向上の要求は高く。In recent years, there has been a high demand for improved precision in semiconductor microfabrication.
とりわけドライエツチングに関しては様々なエツチング
条件に対してウェハ内で均一なエッチングレートを確保
することが重要となってきている。Particularly with regard to dry etching, it has become important to ensure a uniform etching rate within the wafer under various etching conditions.
このためにウェハ内のエツチングレート分布を改善する
システムとして本発明を利用することができる。For this reason, the present invention can be used as a system for improving the etching rate distribution within a wafer.
〔従来の技術］
従来のドライエツチングにおいては、エツチングガスの
選択、エツチング室内の真空度（ガス圧）、高周波（ｒ
ｆ）ｉｔ力等のエツチング条件をいろいろと振って、そ
の中でエツチングレート、エツチング選択比、エツチン
グレートの分布がある許容範囲内に入るようにエツチン
グ条件を選択していた。[Prior art] In conventional dry etching, the selection of etching gas, the degree of vacuum (gas pressure) in the etching chamber, the high frequency (r
f) Etching conditions such as IT power were varied, and etching conditions were selected so that the etching rate, etching selectivity, and distribution of etching rate fell within certain allowable ranges.
ところが、エツチングレートの分布を求めてみると、エ
ツチング装置のハードに関わる要因等によりその均一性
を確保するのが困難であった。However, when determining the distribution of etching rates, it was difficult to ensure uniformity due to factors related to the hardware of the etching apparatus.
例えば、ウェハの中心でエツチングレートが大きく、そ
のためウェハの中心で深い溝ができてしまったり、或い
は溝幅の大きなパターンができたりして、ウェハ内で均
一な特性を有する高密度ＩＣを作製するのが困難であっ
た。For example, the etching rate is high at the center of the wafer, resulting in deep grooves or patterns with large groove widths at the center of the wafer, making it difficult to fabricate high-density ICs with uniform characteristics within the wafer. It was difficult.
本発明は異なるエツチング条件ごとに、ウェハ内のエツ
チングレート分布を均一化することを目的とする。An object of the present invention is to make the etching rate distribution within a wafer uniform under different etching conditions.
〔課題を解決するための手段］
上記課題の解決は、エツチングガス種、総ガス量、ガス
圧、印加電力、ウェハサイズを固定した一定のエツチン
グ条件の下で、エツチングガスを分配弁を経由して複数
個所に設けられた吹き出し口よりウェハ上に導入し、該
分配弁により各吹き出し口のエツチングガス流量を振っ
て試行ウェハのエツチングを行って該試行□ウェハ内の
エツチングレート分布が均一化する最適値を求め、各吹
き出し口の流量を該最適値に設定して製造用ウェハのエ
ツチングを行うドライエツチング方法により達成される
。[Means for solving the problem] The above problem can be solved by distributing the etching gas through a distribution valve under certain etching conditions in which the etching gas type, total gas amount, gas pressure, applied power, and wafer size are fixed. Etching gas is introduced onto the wafer through air outlets provided at multiple locations, and etching is performed on a trial wafer by varying the flow rate of etching gas at each air outlet using the distribution valve, thereby making the etching rate distribution within the trial wafer uniform. This is achieved by a dry etching method in which an optimum value is determined, and the flow rate of each outlet is set to the optimum value to etch the manufacturing wafer.
第１図は本発明の構成の一例を示す説明図であ図におい
て
１はエツチングガス弁であり、エツチングに使用するガ
スの種類或いはガスの流量を制御する。FIG. 1 is an explanatory diagram showing an example of the configuration of the present invention. In the figure, reference numeral 1 denotes an etching gas valve, which controls the type of gas used for etching or the flow rate of the gas.
２は分配弁であり、混合されたエツチングガスを分岐し
て複数個所に設けられた吹き出し口に送る。A distribution valve 2 branches the mixed etching gas and sends it to blow-off ports provided at a plurality of locations.
答弁はマスフローコントローラ（ＭＦ）ヲ用いる。The answer is to use a mass flow controller (MF).
３はｒｆｌｉｆｉ、 ４はエツチング室、５は真空ポ
ンプ、６は中央処理装置（ＣＰＬＩ） 、 ７は下部
電極、８は上部電極、Ｗは被エツチングウェハである。3 is an rflifi, 4 is an etching chamber, 5 is a vacuum pump, 6 is a central processing unit (CPLI), 7 is a lower electrode, 8 is an upper electrode, and W is a wafer to be etched.
分配弁２で分岐されたエツチングガスは吹き出し口Ｂよ
り基板Ｗの中央部に、吹き出し口Ａ、 Ｃより基板Ｗの
周囲に吹き出される。The etching gas branched by the distribution valve 2 is blown out from the outlet B to the center of the substrate W, and from the outlet ports A and C to the periphery of the substrate W.
ＣＰｔ１６に設定されたエツチング条件の下で、エツチ
ングガス弁り、ｒｆ電源３．真空ポンプ５等の条件が固
定される。Under the etching conditions set in CPt16, the etching gas valve, rf power supply 3. The conditions of the vacuum pump 5 etc. are fixed.
このエツチング条件で、各吹き出し口の流量を種々振っ
て試行ウェハで最適条件を求めて９分配弁２の各分岐の
流量をＣＰＵ ６に設定した後１本番の製造用ウェハで
エツチングを開始する。Under these etching conditions, the optimum conditions are determined using a trial wafer by varying the flow rate of each outlet, and after setting the flow rate of each branch of the nine distribution valves 2 in the CPU 6, etching is started on one production wafer.
本発明においては、第１図の分配弁２で吹き出し口Ａ、
Ｂ、Ｃへの振り分は量を制御し、第２図の流れ図に従っ
てエツチングレート分布を測定し。In the present invention, the distribution valve 2 shown in FIG.
The amounts distributed to B and C were controlled, and the etching rate distribution was measured according to the flowchart in FIG.
その結果を分配弁２に帰還してウェハ内のエツチングレ
ート分布を均一化するようにしたものである。The results are fed back to the distribution valve 2 to equalize the etching rate distribution within the wafer.
又、各々のエツチング条件（ガス種、ガス量。Also, each etching condition (gas type, gas amount).
ｒｆ電力、真空度等）に応じた分配弁２の設定値を予め
エツチングプログラムと連動させることもできる。The setting value of the distribution valve 2 according to the RF power, degree of vacuum, etc.) can also be linked with the etching program in advance.
第１図の構成で二酸化珪素（Ｓｉｎｇ）膜をエツチング
し、第２図の流れ図に従ってエツチングレート分布をナ
ノスペック（市販の光学式の測定器で。A silicon dioxide (Sing) film was etched using the configuration shown in Figure 1, and the etching rate distribution was measured using a nanospec (commercially available optical measuring instrument) according to the flowchart shown in Figure 2.
メーカは米国、ナノメトリック社）〔又はαステップ（
市販の接触式の測定器）でもよい〕で測定した。Manufacturer is Nanometric Corporation (USA) [or α Step (
It was measured using a commercially available contact type measuring device).
エツチング条件は次のとおりである。The etching conditions are as follows.
エツチングガス： ＣＦＨｉ ５０ ＳＣＣＭ。Etching gas: CFHi 50 SCCM.
ＣＦ４５ｏ ＳＣＣＭ 真空度： ０．３ Ｔｏｒｒ。CF45o SCCM Vacuum degree: 0.3 Torr.
ｒｆ電電カニ５０Ｗ／４インチウェハ
第３図（ａ）、 （ｂ）はウェハの中心からの距１！１
ｌＤ（インチ）に対するエツチングレートＲ（入／分）
の関係図である。RF electric crab 50W/4 inch wafer Figure 3 (a) and (b) are distances 1!1 from the center of the wafer
Etching rate R (in/min) versus ID (inch)
It is a relationship diagram.
第３図（ａ）は分配弁２のウェハ中央部への吹き出し口
Ｂのみ開放し１周辺への吹き出し口Ａ、 Ｃを閉じた場
合のエツチングレートの分布である。FIG. 3(a) shows the etching rate distribution when only the outlet B of the distribution valve 2 to the center of the wafer is opened and the outlets A and C to the periphery of the distribution valve 2 are closed.
この場合のエツチングレートの最大値は１５００人／分
、最小値は１４００人／分であり２分布は（１５００−
１４００）／（１５００＋１４００） ＝ ３％である
。In this case, the maximum value of the etching rate is 1500 people/minute, the minimum value is 1400 people/minute, and the 2 distribution is (1500-
1400)/(1500+1400) = 3%.
第３図（ｂ）は吹き出し口Ａ、Ｂ、Ｃへの流量比を０．
１．０．８．０．１ とした場合のエツチングレートの
分布である。Fig. 3(b) shows the flow rate ratio to the outlets A, B, and C at 0.
1.0.8.0.1 is the etching rate distribution.
この場合のエツチングレートの最大値は１４５０人／分
、最小値は１４１０人／分であり１分布は（１４５０−
１４１０） ／ （１４５０±１４１０） ＝ １．４
％と向上した。In this case, the maximum value of the etching rate is 1450 people/minute, the minimum value is 1410 people/minute, and one distribution is (1450-
1410) / (1450±1410) = 1.4
%.
以上説明したように本発明によれば、異なるエツチング
条件ごとに、ウェハ内のエツチングレート分布を均一化
することができる。As explained above, according to the present invention, the etching rate distribution within the wafer can be made uniform under different etching conditions.
各吹き出し口よりのエツチングガスの流量を。The flow rate of etching gas from each outlet.
各々のエツチング条件（ガス種、ガス量、 ｒｆ電力。Each etching condition (gas type, gas amount, RF power).
真空度等）において、エツチングレート測定結果と連動
させて帰還させることによりウェハ内のエツチングレー
ト分布を均一化することができるようになった。It has become possible to make the etching rate distribution within the wafer uniform by feeding back the data in conjunction with the etching rate measurement results.
又９分配弁の各々の開閉量を各エツチングプログラムと
してメモリしておけば、プログラムの指定だけで均一な
エツチングレート分布が得られるエツチングを行うこと
ができる。Furthermore, if the opening/closing amounts of each of the nine distribution valves are stored in memory as each etching program, etching can be performed that provides a uniform etching rate distribution just by specifying the program.
第１図は本発明の構成の一例を示す説明図第２図は本発
明の流れ図
第３図（ａ）、 （ｂ）はウェハの中心からの距離Ｄ（
インチ）に対するエツチングレートＲ（入／分）の関係
図である。
図において。
１はエツチングガス弁、 ２は分配弁３はｒｆ電源、
４はエツチング室。
５は真空ポンプ。
６は中央処理装置（ＣＰＵ） 。
７は下部電極、 ８は上部電極Ｗは被エッチ
ングウエハ
、不４と日月ｍ派い序］
工・ゾくトンフレー１−Ｆ？、Ｃ入／３す）２
１
３巨貴！しくイン＋）
（（：Ｌ）
一
０
Ｒ灯Ω間係図
愼
酬FIG. 1 is an explanatory diagram showing an example of the configuration of the present invention. FIG. 2 is a flow diagram of the present invention. FIGS. 3(a) and 3(b) are distances D(
FIG. 3 is a relationship diagram of the etching rate R (in/min) with respect to the etching rate R (in/min). In fig. 1 is an etching gas valve, 2 is a distribution valve, 3 is an RF power source,
4 is the etching room. 5 is a vacuum pump. 6 is the central processing unit (CPU). 7 is the lower electrode, 8 is the upper electrode W is the wafer to be etched, F4 and Sun Moon m faction] Engineering/Zokuton Freight 1-F? , C included/3s) 2 1 3 giant! Shikuin +) ((:L) 10 R light Ω diagram exchange
Claims (1)
ハサイズを固定した一定のエッチング条件の下で， エッチングガスを分配弁を経由して複数個所に設けられ
た吹き出し口よりウェハ上に導入し，該分配弁により各
吹き出し口のエッチングガス流量を振って試行ウェハの
エッチングを行って該試行ウェハ内のエッチングレート
分布が均一化する最適値を求め，各吹き出し口の流量を
該最適値に設定して製造用ウェハのエッチングを行うこ
とを特徴とするドライエッチング方法。[Scope of Claims] Under certain etching conditions in which the type of etching gas, total gas amount, gas pressure, applied power, and wafer size are fixed, the etching gas is supplied via a distribution valve to a plurality of outlets provided at multiple locations. The flow rate of the etching gas at each outlet is varied by the distribution valve, and a trial wafer is etched to determine the optimum value that makes the etching rate distribution uniform within the trial wafer. A dry etching method characterized in that a production wafer is etched by setting the value to the optimum value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1941690A JPH03224224A (en) | 1990-01-30 | 1990-01-30 | Dry etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1941690A JPH03224224A (en) | 1990-01-30 | 1990-01-30 | Dry etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03224224A true JPH03224224A (en) | 1991-10-03 |
Family
ID=11998655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1941690A Pending JPH03224224A (en) | 1990-01-30 | 1990-01-30 | Dry etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03224224A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5980687A (en) * | 1997-05-20 | 1999-11-09 | Tokyo Electron Limited | Plasma processing apparatus comprising a compensating-process-gas supply means in synchronism with a rotating magnetic field |
| JP2003518734A (en) * | 1999-11-15 | 2003-06-10 | ラム リサーチ コーポレーション | Plasma processing system with dynamic gas distribution control |
| JP2006041088A (en) * | 2004-07-26 | 2006-02-09 | Hitachi High-Technologies Corp | Plasma treatment apparatus |
| JP2008112139A (en) * | 2006-10-30 | 2008-05-15 | Applied Materials Inc | Mask etch plasma reactor with backside optical sensor and multiple frequency control of etch distribution |
| US7713756B2 (en) | 2003-08-05 | 2010-05-11 | Hitachi High-Technologies Corporation | Apparatus and method for plasma etching |
| US10170280B2 (en) | 2006-10-30 | 2019-01-01 | Applied Materials, Inc. | Plasma reactor having an array of plural individually controlled gas injectors arranged along a circular side wall |
-
1990
- 1990-01-30 JP JP1941690A patent/JPH03224224A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5980687A (en) * | 1997-05-20 | 1999-11-09 | Tokyo Electron Limited | Plasma processing apparatus comprising a compensating-process-gas supply means in synchronism with a rotating magnetic field |
| JP2003518734A (en) * | 1999-11-15 | 2003-06-10 | ラム リサーチ コーポレーション | Plasma processing system with dynamic gas distribution control |
| US7713756B2 (en) | 2003-08-05 | 2010-05-11 | Hitachi High-Technologies Corporation | Apparatus and method for plasma etching |
| US8083889B2 (en) | 2003-08-05 | 2011-12-27 | Hitachi High-Technologies Corporation | Apparatus and method for plasma etching |
| JP2006041088A (en) * | 2004-07-26 | 2006-02-09 | Hitachi High-Technologies Corp | Plasma treatment apparatus |
| JP4550507B2 (en) * | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
| JP2008112139A (en) * | 2006-10-30 | 2008-05-15 | Applied Materials Inc | Mask etch plasma reactor with backside optical sensor and multiple frequency control of etch distribution |
| US10170280B2 (en) | 2006-10-30 | 2019-01-01 | Applied Materials, Inc. | Plasma reactor having an array of plural individually controlled gas injectors arranged along a circular side wall |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20080185104A1 (en) | Multi-zone gas distribution system for a treatment system | |
| US9982340B2 (en) | Shower head apparatus and method for controlling plasma or gas distribution | |
| US20070249182A1 (en) | ETCHING OF SiO2 WITH HIGH SELECTIVITY TO Si3N4 AND ETCHING METAL OXIDES WITH HIGH SELECTIVITY TO SiO2 AT ELEVATED TEMPERATURES WITH BCl3 BASED ETCH CHEMISTRIES | |
| CN1468441A (en) | Gas distribution apparatus for semiconductor processing | |
| JP6963097B2 (en) | Plasma processing method | |
| JP7447093B2 (en) | Atomic layer treatment process using metastable active radical species | |
| US7018855B2 (en) | Process controls for improved wafer uniformity using integrated or standalone metrology | |
| CN106449408A (en) | Method of manufacturing semiconductor device | |
| JPH03224224A (en) | Dry etching | |
| US6239043B1 (en) | Method for modulating uniformity of deposited layer thickness | |
| TW202027191A (en) | Compensating chamber and process effects to improve critical dimension variation for trim process | |
| TWI681443B (en) | Trim method for patterning during various stages of an integration scheme | |
| US6632726B2 (en) | Film formation method and film formation apparatus | |
| US11456195B2 (en) | Wafer processing apparatus and wafer processing method using the same apparatus | |
| CN115605979A (en) | Automatic feed-forward and feedback sequences for patterned CD control | |
| TWI804641B (en) | Improving azimuthal critical dimension non-uniformity for double patterning process | |
| US20090142930A1 (en) | Gate profile control through effective frequency of dual HF/VHF sources in a plasma etch process | |
| CN101133682B (en) | Method for etching having a controlled distribution of process results | |
| TW202121532A (en) | Etching method and etching apparatus | |
| TW202332326A (en) | Plasma chamber with multiphase rotating independent gas cross-flow with reduced volume and dual vhf | |
| TW201920752A (en) | Plasma processing method and plasma processing apparatus | |
| TWI822918B (en) | Plasma processing method and plasma processing apparatus | |
| US20090156011A1 (en) | Method of controlling CD bias and CD microloading by changing the ceiling-to-wafer gap in a plasma reactor | |
| JP4789323B2 (en) | Wafer processing reactor system with programmable processing parameters and method of operation thereof | |
| TW201405661A (en) | Method for removing optical resist |