JPH03223648A - Thin film moisture sensitive element - Google Patents
Thin film moisture sensitive elementInfo
- Publication number
- JPH03223648A JPH03223648A JP16073890A JP16073890A JPH03223648A JP H03223648 A JPH03223648 A JP H03223648A JP 16073890 A JP16073890 A JP 16073890A JP 16073890 A JP16073890 A JP 16073890A JP H03223648 A JPH03223648 A JP H03223648A
- Authority
- JP
- Japan
- Prior art keywords
- film
- thin film
- moisture
- metal
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 55
- 239000010408 film Substances 0.000 claims abstract description 57
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 229920001721 polyimide Polymers 0.000 claims abstract description 25
- 239000004642 Polyimide Substances 0.000 claims abstract description 24
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 15
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 15
- 150000004767 nitrides Chemical class 0.000 claims abstract description 12
- 238000010030 laminating Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000012528 membrane Substances 0.000 claims description 3
- 239000002243 precursor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 13
- 230000004044 response Effects 0.000 abstract description 7
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 5
- 238000003795 desorption Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 229920006254 polymer film Polymers 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910013470 LiC1 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 125000005462 imide group Chemical group 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007363 ring formation reaction Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical group [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
皮果上■且朋立互
本発明は、薄膜感湿素子に関する。更に詳しくは、温度
、薬品等への耐性がすぐれ、高感度で高速応答性を有す
る薄膜感湿素子に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film moisture sensitive element. More specifically, the present invention relates to a thin film moisture-sensitive element having excellent resistance to temperature, chemicals, etc., high sensitivity, and high-speed response.
従来勿技地
空気中の相対湿度の制御は、精密工業、食品工業、繊維
工業、ビル管理上等で大変重要であり、それを検知する
感湿素子としては、従来次のような材料を用いたものが
知られている。Conventionally, controlling the relative humidity in the air is very important in the precision industry, food industry, textile industry, building management, etc., and the following materials have traditionally been used as moisture-sensing elements to detect it. What was there is known.
（１） Ｓｅ、 Ｇｅ、 Ｓｔ等の金属あるいは半導体
（２） Ｓｎ、 Ｐｅ、 Ｔｔ等の金属の酸化物（３）
Ａｔｔｏ：＋等の多孔質金属酸化物（４） ＬｉＣ１等
の電解質塩
（５）有機または無機材料からなる高分子厚膜しかしな
がら、これらの各種材料を用いた感湿素子は、いずれも
保守が大変であったり、あるいは信鯨性や応答性に問題
がある等、満足される状態にはない。(1) Metals or semiconductors such as Se, Ge, St, etc. (2) Metal oxides such as Sn, Pe, Tt, etc. (3)
Porous metal oxides such as Atto: + (4) Electrolyte salts such as LiC1 (5) Thick polymer films made of organic or inorganic materials However, all moisture-sensitive elements using these various materials are difficult to maintain. The system is not in a satisfactory state, as there are problems with reliability and responsiveness.
例えば、上記（２）の金属酸化物を用いる場合には、そ
れの成形にプレスや焼結が行われるが、均質なプレスが
問題であったりあるいは焼結時の割れなどの問題がみら
れる。また、工程上では問題なく成形されても、耐久性
、換言すれば信顛性にも問題がある。For example, when using the metal oxide of (2) above, pressing and sintering are performed to shape it, but there are problems with homogeneous pressing or cracking during sintering. Further, even if the molding is performed without any problem in the process, there is a problem in durability, in other words, in reliability.
また、上記（５）の高分子厚膜を用いた場合には、材料
面では廉価であるものの、溶剤等の薬品による劣化や信
軌性の低下等の問題点がみられる。更に、吸湿部分の体
積が大きいため、高速化及び高感度化にも限界があり、
キャパシタを構成して、容量または電気伝導度を測定す
る場合に、その値が小さいことにより、検出系の安定度
が重要な課題となっている。ここで、高分子厚膜とは、
スピンコード等の方法により得られる厚みが数千Å以上
の高分子膜のことである。Furthermore, when the thick polymer film of (5) above is used, although it is inexpensive in terms of material, there are problems such as deterioration due to chemicals such as solvents and a decrease in reliability. Furthermore, because the volume of the moisture-absorbing part is large, there are limits to increasing speed and sensitivity.
When measuring capacitance or electrical conductivity by configuring a capacitor, the stability of the detection system is an important issue because the value is small. Here, what is a polymer thick film?
A polymer film with a thickness of several thousand angstroms or more obtained by methods such as spin coding.
が ° しよ゛と る 占
ラングミュア・ブロジェット法を利用して得られたポリ
イミド系薄膜は、その規則的な構造のため水分の脱着速
度が速く、またぐ微量の水分の存在により誘電率、ある
いは電気伝導度が大きく変化する。更には、薄膜である
ため、素子を構成した場合の容量および電気伝導度が比
較的大きく、検出系の低コスト化にもつながる。Polyimide thin films obtained using the Langmuir-Blodgett method have a regular structure that allows them to desorb water at a high rate, and the presence of a small amount of water across them increases the dielectric constant or Electrical conductivity changes significantly. Furthermore, since it is a thin film, the capacitance and electrical conductivity of the device are relatively large, which leads to a reduction in the cost of the detection system.
しかし、我々が特願昭６３−１４９７６３で提案した、
ラングミュア・ブロジェット法を利用して得られたポリ
イミド系薄膜のみを感湿膜として用いた素子では、高電
界のバイアス下での使用は困難であり、薄厚が薄い場合
では、零バイアス下でも容量及び電気伝導度にドリフト
を住じる可能性がある。However, we proposed in patent application No. 63-149763,
In a device using only a polyimide thin film obtained using the Langmuir-Blodgett method as a moisture-sensitive film, it is difficult to use it under a high electric field bias, and if the film is thin, the capacitance decreases even under zero bias. and may cause drift in electrical conductivity.
本発明者等は、こうしたラングミュア・ブロジェット法
を利用して得られたポリイミド系薄膜を感湿膜として用
いることの利点を生かし、更に素子の容量および電気伝
導度のドリフトを押さえ、高電界のバイアス下での使用
を可能とするために、厚みが２０００Å以下の金属酸化
物膜あるいは金属窒化物膜と積層されてなる誘電体膜を
感湿膜として薄膜感湿素子とした。これにより保守、信
顛性、応答性等に問題のみられる従来の感湿素子のかわ
りに、感度および応答性のいずれの点においてもすぐれ
、また、耐熱性、耐薬品性にすぐれたポリイミド系薄膜
を含む、薄膜感湿素子を提供することを目的とする。The present inventors took advantage of the advantages of using the polyimide thin film obtained using the Langmuir-Blodgett method as a moisture-sensitive film, further suppressed the drift of capacitance and electrical conductivity of the device, and In order to enable use under bias, a dielectric film laminated with a metal oxide film or metal nitride film having a thickness of 2000 Å or less was used as a moisture-sensitive film to form a thin film moisture-sensitive element. As a result, instead of conventional moisture-sensitive elements that have problems with maintenance, reliability, responsiveness, etc., a polyimide thin film that has excellent sensitivity and responsiveness, and also has excellent heat resistance and chemical resistance. An object of the present invention is to provide a thin film moisture-sensitive element including the following.
口 占 ７゛ るための
本発明は、我々が特開昭６３−２１８７２８等に提案し
た、両性ポリイミド前駆体をラングミュア・ブロジェッ
ト法により、厚みが２０００Å以下の金属酸化物膜ある
いは金属窒化物膜を形成した基板上に累積し、それに続
くイミド化反応によって作られたポリイミド系薄膜を利
用して、薄膜感湿素子を作製することによってなされた
ものである。ポリイミド系薄膜としては、特に下式の構
造の繰返し単位を有する２種類が応答性が速く、本発明
において好ましい例である。The present invention, which we proposed in JP-A No. 63-218728, etc., forms a metal oxide film or metal nitride film with a thickness of 2000 Å or less by using an amphoteric polyimide precursor using the Langmuir-Blodgett method. This method was made by fabricating a thin film moisture-sensitive element using a polyimide thin film that was accumulated on a substrate on which a polyimide film was formed and then produced by an imidization reaction. In particular, two types of polyimide thin films having repeating units having the structure shown below have quick response and are preferred examples in the present invention.
（以下余白）
また、ここでいう金属酸化物膜とは、例えばＣＶＤ法、
真空蒸着法、スパッタ法、電極酸化法により得られる酸
化ケイ素、酸化アルミニウム、酸化タンタル膜であり、
金属窒化物膜とは、例えばＣＶＤ法により得られる窒化
ケイ素膜である。(Left below) Also, the metal oxide film referred to here means, for example, the CVD method,
Silicon oxide, aluminum oxide, tantalum oxide films obtained by vacuum evaporation method, sputtering method, electrode oxidation method,
The metal nitride film is, for example, a silicon nitride film obtained by a CVD method.
ラングミュア・ブロジェット法により得られるポリイミ
ド系薄膜は、薄膜全体にわたる水分の脱着が容易に起こ
るように、１０００Å以下、好ましくは５００Å以下の
膜厚が望ましい。また、こうして得られたポリイミド系
薄膜は、厚みが２０００Å以下の金属酸化物膜あるいは
金属窒化物股上で高い絶縁耐圧を有する。The polyimide thin film obtained by the Langmuir-Blodgett method desirably has a thickness of 1000 Å or less, preferably 500 Å or less so that moisture can be easily desorbed throughout the thin film. Moreover, the polyimide thin film thus obtained has a high dielectric strength voltage on a metal oxide film or metal nitride film having a thickness of 2000 Å or less.
金属／感湿膜／金属（以下ＭＵＭという）構造の薄膜感
湿素子の模式図を、第１〜２図に示す。Schematic diagrams of a thin film moisture sensitive element having a metal/moisture sensitive membrane/metal (hereinafter referred to as MUM) structure are shown in FIGS. 1 and 2.
絶縁基板（Ｉｓ）あるいは半導体基板（ＳＳ）を用い、
その上に金属、感湿膜、金属の順ｔコ形成される。用い
る金属および半導体は、酸化被膜を形成するものでも良
い。また、上部電極となる金属は、水分の出入りを容易
とするため、多孔πで、なお且つ金属的な電気伝導度を
有する程度の厚みでなくてはならない。Using an insulating substrate (Is) or a semiconductor substrate (SS),
A metal layer, a moisture sensitive film, and a metal layer are formed thereon in this order. The metal and semiconductor used may be those that form an oxide film. In addition, the metal serving as the upper electrode must have pores π and be thick enough to have metallic electrical conductivity in order to facilitate the entry and exit of moisture.
金属／感湿膜／半導体（以下ＭＩＳという）構造の薄膜
感湿素子の模式図を、第３〜４図に示す。Schematic diagrams of a thin film moisture sensitive element having a metal/moisture sensitive film/semiconductor (hereinafter referred to as MIS) structure are shown in FIGS. 3 and 4.
半導体基板（ＳＳ）あるいは電極（Ｍ）を持つ絶縁基板
（Ｉｓ）上に形成された半導体膜（Ｓ）を用い、その上
に、感湿膜、金属の順に形成される。A semiconductor film (S) formed on a semiconductor substrate (SS) or an insulating substrate (Is) having an electrode (M) is used, and a moisture sensitive film and a metal are formed thereon in this order.
用いる金属および半導体は、酸化被膜を形成するもので
も良い。また、上部電極となる金属は１．水分の出入り
を容易とするため、多孔質で、なお且つ金属的な電気伝
導度を有する程度の厚みでなくてはならない。The metal and semiconductor used may be those that form an oxide film. In addition, the metal that becomes the upper electrode is 1. In order to facilitate the entry and exit of moisture, it must be porous and thick enough to have metallic electrical conductivity.
さらに、上部電極は開口部を存し、その開口部より水分
等の出入りが可能な構造をもち、例えば櫛形や渦巻状の
電極を用いることができる。Further, the upper electrode has an opening, and has a structure that allows water to enter and exit through the opening, and for example, a comb-shaped or spiral-shaped electrode can be used.
第１〜４図中の感湿膜とは、厚みが２０００Å以下の金
属酸化物膜、あるいは金属窒化物膜と厚みが１０００Å
以下のポリイミド系′Ｒ膜がこの順序で積層されてなる
誘電体膜のことである。The moisture sensitive film in Figures 1 to 4 refers to a metal oxide film with a thickness of 2000 Å or less, or a metal nitride film with a thickness of 1000 Å.
This is a dielectric film formed by laminating the following polyimide-based R films in this order.
又肌免作朋二四来
本発明に係る薄膜感湿素子は、ラングミュア・ブロジェ
ット法を利用して得られたポリイミド系薄膜が、湿度に
対して迅速に感応するという性質を有効に利用し、更に
、素子の容量および電気伝導度のドリフトを押さえ、高
電界のバイアス下での使用を可能とするために、厚みが
５０００Å以下の金属酸化物膜、あるいは金属窒化物膜
と積層されてなる誘電体膜を感湿膜として含むものであ
る。この発明により、温度、薬品等への耐性がすぐれ、
高感度で高速応答性の感湿薄膜素子の提供が可能となっ
た。また、素子を構成した場合の容量および電気伝導度
が比較的大きく、検出系の低コスト化も達成できる。In addition, the thin film moisture-sensitive element according to the present invention effectively utilizes the property that a polyimide thin film obtained using the Langmuir-Blodgett method quickly responds to humidity. Furthermore, in order to suppress drift in capacitance and electrical conductivity of the device and enable use under high electric field bias, it is laminated with a metal oxide film or metal nitride film with a thickness of 5000 Å or less. It includes a dielectric film as a moisture sensitive film. This invention has excellent resistance to temperature, chemicals, etc.
It has become possible to provide a moisture-sensitive thin film element with high sensitivity and fast response. Furthermore, the capacitance and electrical conductivity of the device are relatively large, and the cost of the detection system can be reduced.
１施■ 次に実施例によって、本発明を説明する。1 serving■ Next, the present invention will be explained by examples.
実施例１
ガラス基板上に、アルミニウムを蒸着して電極を形成し
た基板の上に、ＣＶＤ法により１０００人厚さに酸化ケ
イ素薄膜を形成し、下図に示す構造の繰り返し単位を有
する両性ポリイミド前駆体（ＰＩＦ）をラングミュア・
ブロジェット法により４１層累積した。その後、４００
″Ｃで■
１時間熱処理を施しイミド化を完結させた。得られたポ
リイミド薄膜は、２００人である。形成されたポリイミ
ド薄膜の上に、電極幅１００μｍ、電極間隔５００μｍ
の櫛形の金を５００人の厚さに抵抗加熱法で蒸着して、
ＭｒＭ型の薄膜感湿素子を作製した。Example 1 A silicon oxide thin film was formed to a thickness of 1000 nm by CVD on a glass substrate on which aluminum was vapor-deposited to form an electrode, and an amphoteric polyimide precursor having a repeating unit of the structure shown in the figure below was formed. Langmuir (PIF)
41 layers were accumulated by Blodgett's method. After that, 400
The imidization was completed by heat treatment for 1 hour at "C."
The comb-shaped gold is deposited using resistance heating to a thickness of 500 mm.
A MrM type thin film moisture sensitive element was fabricated.
この程度の厚さの金は、多孔質で、なお且つ金属的な電
気伝導度を有し、水分の出入りが容易である。Gold of this thickness is porous and has metallic electrical conductivity, allowing moisture to easily enter and exit.
このようにして構成された薄膜感湿素子を、湿度試験瓶
に取りつけ、ＹＨＰ４１９２Ａインピーダンスアナライ
ザーに接続した後、周波数を一定（ＩＫＨｚ）に保ちな
がら、１１〜９２％の相対湿度に対応するキャパシタン
スの変化を２０’Ｃの温度で測定した。得られた結果を
、第５図のグラフに示す。この結果から、キャパシタン
スにより相対湿度を高感度で測定することができる感湿
素子としての有効性が確かめられた。もちろん、電気伝
導度によっても、対応湿度を測定することができる。After attaching the thin film moisture sensitive element thus constructed to a humidity test bottle and connecting it to a YHP4192A impedance analyzer, the change in capacitance corresponding to relative humidity from 11 to 92% was measured while keeping the frequency constant (IKHz). was measured at a temperature of 20'C. The obtained results are shown in the graph of FIG. This result confirmed its effectiveness as a humidity sensing element that can measure relative humidity with high sensitivity using capacitance. Of course, the corresponding humidity can also be determined by electrical conductivity.
更に、このＭＩＭ型の薄膜感湿素子は、５■のバイアス
下でも、素子破壊せずに、キャパシタンス、電気伝導度
の変化が殆どなく、安定的に用いることが可能なことも
確かめられた。Furthermore, it has been confirmed that this MIM type thin film moisture sensitive element can be used stably even under a bias of 5 cm without breaking the element and with almost no change in capacitance or electrical conductivity.
実施例２
金でオーミック接触を取り、裏面電極を形成したシリコ
ン基板に、５００人の厚さに熱酸化法により酸化ケイ素
膜を形成し、実施例１と同様の方法で下式の構造の繰り
返し単位を有するポリイミド薄膜を形成した。Example 2 A silicon oxide film was formed to a thickness of 500 mm by thermal oxidation on a silicon substrate on which an ohmic contact was made with gold and a back electrode was formed, and the structure of the following formula was repeated in the same manner as in Example 1. A polyimide thin film having units was formed.
形成されたポリイミド薄膜の上に、電極幅１００μｍ、
電極間隔５００ｕｍの櫛形の金を５００人の厚さに抵抗
加熱法で蒸着して、ＭＩＳ型の薄膜感湿素子を作製した
。On the formed polyimide thin film, an electrode width of 100 μm,
A MIS type thin film moisture sensitive element was fabricated by depositing comb-shaped gold with an electrode spacing of 500 um to a thickness of 500 mm using a resistance heating method.
このようにして構成された薄膜感湿素子も、実施例１の
ＭＩＭ型の薄膜感湿素子と同様の性質を有し、相対湿度
の変化に対する、キャパシタンス、電気伝導度の変化は
５秒で完結し、薄膜感湿素子としての有効性が確かめら
れた。The thin film humidity sensing element constructed in this manner also has properties similar to the MIM type thin film humidity sensing element of Example 1, and changes in capacitance and electrical conductivity in response to changes in relative humidity are completed in 5 seconds. However, its effectiveness as a thin film moisture-sensitive element was confirmed.
実施例３
ガラス基板上にタンタルを蒸着して電極を形成した基板
上に、陽極酸化法により５００人の厚さに酸化タンタル
薄膜を形成し、実施例１と同様の方法で下式の構造の繰
り返し単位を有するポリイミド薄膜を形成した。Example 3 A tantalum oxide thin film was formed to a thickness of 500 mm by anodization on a glass substrate on which an electrode was formed by vapor deposition of tantalum. A polyimide thin film having repeating units was formed.
形成されたポリイミ
ド薄膜の上に、
電極幅１００
μｍ、電極間隔５００μｍの櫛形の金を５００人の厚さ
に抵抗加熱法で蒸着して、ＭＩＭ型の薄膜感湿素子を作
製した。On the formed polyimide thin film, comb-shaped gold having an electrode width of 100 μm and an electrode spacing of 500 μm was deposited to a thickness of 500 μm using a resistance heating method, thereby producing an MIM type thin film moisture sensitive element.
このようにして構成された薄膜感湿素子は、相対湿度の
変化に対する、キャパシタンス、電気伝導度の変化は、
５秒以内に完結し、この薄膜感湿素子が高速応答性を有
することが確かめられた。The thin film humidity sensitive element constructed in this way shows changes in capacitance and electrical conductivity in response to changes in relative humidity.
The test was completed within 5 seconds, and it was confirmed that this thin film moisture sensitive element had high-speed response.
尚、本実施例において、感湿膜の形成法としてラングミ
ュア・ブロジェット法として垂直浸漬法を用いたが、一
般的に知られている回転円筒法や水平付着法を用いても
良い。また、ポリイミド形薄膜としては、本実施例中の
材料に限定するものではなく、熱環化反応によりイミド
環を生じる、両親媒性ポリマーより得られるポリマーで
あれば、いかなる物質でも良い。In this example, a vertical immersion method as a Langmuir-Blodgett method was used as a method for forming the moisture-sensitive film, but a generally known rotating cylinder method or horizontal deposition method may also be used. Further, the polyimide type thin film is not limited to the materials used in this example, but any material may be used as long as it is a polymer obtained from an amphipathic polymer that generates an imide ring through a thermal cyclization reaction.
更に、金属酸化物膜あるいは金属窒化物膜についても、
本実施例中の材料、製膜法に限定するものではなく、世
の中で広く知られている金属酸化物膜あるいは金属窒化
物膜で良い。Furthermore, regarding metal oxide films or metal nitride films,
The material and film forming method are not limited to those used in this embodiment, and metal oxide films or metal nitride films that are widely known in the world may be used.
第１図〜第２図は、ＭＩＭ型の薄膜感湿素子の模式図で
あり、第３図〜第４図は、ＭＩＳ型の薄膜感湿素子の模
式図である。第５図は、実施例１に記載したＭＩＭ型の
薄膜感湿素子の、相対湿度に対するキャパシタンスの変
化を示すグラフである。
（符号の説明）
Ｍ・・・・・電極
■・・・・感湿膜
Ｓ・・・・半導体
ＶＳ・・・絶縁性基板
ＳＳ・・・半導体装置
第
１
図
８２図
第５図
７ＦＢ荊；’！！Ｌ／１
（６ム）1 to 2 are schematic diagrams of an MIM type thin film moisture sensitive element, and FIGS. 3 to 4 are schematic diagrams of an MIS type thin film moisture sensitive element. FIG. 5 is a graph showing a change in capacitance with respect to relative humidity of the MIM type thin film moisture sensitive element described in Example 1. (Explanation of symbols) M... Electrode ■... Moisture sensitive film S... Semiconductor VS... Insulating substrate SS... Semiconductor device 1 Figure 82 Figure 5 Figure 7 FB 荊; '! ! L/1 (6mm)
Claims (4)
金属窒化物膜と、厚みが１０００Å以下のポリイミド系
薄膜とが積層されてなる誘電体膜を含む薄膜感湿素子。(1) A thin film moisture sensitive element including a dielectric film formed by laminating a metal oxide film or metal nitride film with a thickness of 2000 Å or less and a polyimide thin film with a thickness of 1000 Å or less.
り得られた両性ポリイミド前駆体薄膜をイミド化したポ
リイミド系薄膜を含むことを特徴とする請求項（１）記
載の薄膜感湿素子。(2) The thin film moisture sensitive element according to claim (1), wherein the dielectric film includes a polyimide thin film obtained by imidizing an amphoteric polyimide precursor thin film obtained by the Langmuir-Blodgett method.
度を有する程度の厚みをもつ上部電極を備えた、金属／
感湿膜／金属構造の素子からなり、感湿膜は請求項（１
）もしくは（２）の誘電体膜を含むことを特徴とする薄
膜感湿素子。(3) A metal/
It consists of a moisture-sensitive film/metallic structure element, and the moisture-sensitive film is defined by claim (1).
) or (2) A thin film moisture sensitive element comprising the dielectric film of (2).
電気伝導度を有する程度の厚みをもつ上部電極を備えた
、金属／感湿膜／半導体構造の素子からなり、感湿膜は
請求項（１）もしくは（２）の誘電体膜を含むことを特
徴とする薄膜感湿素子。(4) A moisture-sensitive membrane consisting of an element having a metal/moisture-sensitive membrane/semiconductor structure and having an upper electrode having an opening and having a thickness that is porous and has metal-like electrical conductivity. A thin film moisture sensitive element comprising the dielectric film according to claim (1) or (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16073890A JPH03223648A (en) | 1989-10-17 | 1990-06-19 | Thin film moisture sensitive element |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1-271298 | 1989-10-17 | ||
| JP27129889 | 1989-10-17 | ||
| JP16073890A JPH03223648A (en) | 1989-10-17 | 1990-06-19 | Thin film moisture sensitive element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03223648A true JPH03223648A (en) | 1991-10-02 |
Family
ID=26487146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16073890A Pending JPH03223648A (en) | 1989-10-17 | 1990-06-19 | Thin film moisture sensitive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03223648A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6980570B2 (en) | 2003-06-05 | 2005-12-27 | Shimadzu Corporation | Solid laser apparatus |
| CN104458489A (en) * | 2014-12-03 | 2015-03-25 | 中国石油大学(北京) | Method and device for predicating adsorption gas content of mud shale |
| CN114018991A (en) * | 2021-09-18 | 2022-02-08 | 中国科学院微电子研究所 | Humidity sensor and preparation method thereof |
-
1990
- 1990-06-19 JP JP16073890A patent/JPH03223648A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6980570B2 (en) | 2003-06-05 | 2005-12-27 | Shimadzu Corporation | Solid laser apparatus |
| CN104458489A (en) * | 2014-12-03 | 2015-03-25 | 中国石油大学(北京) | Method and device for predicating adsorption gas content of mud shale |
| CN114018991A (en) * | 2021-09-18 | 2022-02-08 | 中国科学院微电子研究所 | Humidity sensor and preparation method thereof |
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