JPH0321903A - Polarizer - Google Patents
PolarizerInfo
- Publication number
- JPH0321903A JPH0321903A JP15465889A JP15465889A JPH0321903A JP H0321903 A JPH0321903 A JP H0321903A JP 15465889 A JP15465889 A JP 15465889A JP 15465889 A JP15465889 A JP 15465889A JP H0321903 A JPH0321903 A JP H0321903A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- layer
- thickness
- transparent substrates
- polarizer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 229910052681 coesite Inorganic materials 0.000 abstract description 7
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 7
- 229910052682 stishovite Inorganic materials 0.000 abstract description 7
- 229910052905 tridymite Inorganic materials 0.000 abstract description 7
- 239000000377 silicon dioxide Substances 0.000 abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 6
- 238000010030 laminating Methods 0.000 abstract description 5
- 238000010791 quenching Methods 0.000 abstract 2
- 230000000171 quenching effect Effects 0.000 abstract 2
- 239000010408 film Substances 0.000 description 21
- 230000008033 biological extinction Effects 0.000 description 12
- 230000010287 polarization Effects 0.000 description 11
- 238000000926 separation method Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000005566 electron beam evaporation Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- -1 refractive index Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
概要
ショート構戊の偏光分離膜を用いてなる偏光子に関し、
所定以上の消光比を得ることができる光の波長範囲が広
く、且つ、製造が容易な偏光子の提供を目的とし、
第１及び第２の透明基板間にＳｉ層及びＳｉ○２層を交
互に奇数層積層してなる偏光子であって、上記第１及び
第２の透明基板に直接接触する層をＳｉ層とし、光の波
長の４分の１に相当する厚みを１．０とするときに、上
記第１及び第２の透明基板に直接接触するＳｉ層の厚み
の設計値を０．４３、中央に位置するＳｉ層の厚みの設
計値を１．１６、その他のＳｉ層及びＳｉＯ２層の厚み
の設計値を１．０とし、各層の厚みの偏差を±１．
０％として構戊する。[Detailed Description of the Invention] Summary: To provide a polarizer using a polarized light separation film with a short structure, which has a wide wavelength range of light that can obtain an extinction ratio of a predetermined value or more, and which is easy to manufacture. A polarizer comprising an odd number of Si layers and Si○2 layers alternately laminated between first and second transparent substrates, the layer being in direct contact with the first and second transparent substrates. is a Si layer, and the thickness corresponding to one-fourth of the wavelength of light is 1.0, then the design value of the thickness of the Si layer that directly contacts the first and second transparent substrates is 0.43. , the design value of the thickness of the Si layer located in the center is 1.16, the design value of the thickness of the other Si layers and the SiO2 layer is 1.0, and the deviation of the thickness of each layer is ±1.
It is assumed to be 0%.
産業上の利用分野
本発明はショート構或の偏光分離膜を用いてなる偏光子
に関する。INDUSTRIAL APPLICATION FIELD The present invention relates to a polarizer using a polarized light separating film having a short structure.
偏光子は、非偏光から偏光（直線偏光〉を分離する場合
、偏光を互いに直交する偏光面を有する２つの偏光戊分
に分離する場合等に利用され、例えば光通信の分野にお
いては、光アイソレータ、光スイッチ等の構戊要素とし
て多用されている。Polarizers are used to separate polarized light (linearly polarized light) from unpolarized light, or to separate polarized light into two polarized light components with planes of polarization perpendicular to each other.For example, in the field of optical communications, they are used as optical isolators. It is widely used as a structural element in optical switches, etc.
偏光子の１形態として、一対の透明基板間にショート構
或の偏光分離膜を介在してなるものがある。One type of polarizer is one in which a polarized light separating film with a short structure is interposed between a pair of transparent substrates.
ここで、ショート構戊とは、偏光分離膜がその屈折率よ
りも小さな屈折率の空気中に直接露出していない構戊を
いう。ショート構或の偏光分離膜を用いてなる偏光子に
あっては、使用する光の波長により消光比等の性能が大
きく異なるので、所定以上の消光比を得ることができる
光の波長範囲（以下「帯域」又は「帯域幅」という場合
がある。）が広い偏光子が要求されている。Here, the short structure refers to a structure in which the polarization separation film is not directly exposed to air having a refractive index smaller than that of the polarization separation film. In the case of a polarizer that uses a polarized light separation film with a short structure, performance such as extinction ratio varies greatly depending on the wavelength of the light used. Polarizers with a wide band (sometimes referred to as "bandwidth" or "bandwidth") are required.
従来の技術
従来、ショート構或の偏光分離膜を用いてなる偏光子は
、例えば、ガラス等の透明材からなる一対の透明基板を
用意し、一方の透明基板上にＳ１０２及びＴｉＯ２を電
子ビーム蒸着法等により交互に積層し、この積層物上に
他方の透明基板を貼り付けることにより構或されていた
。BACKGROUND ART Conventionally, a polarizer using a polarization separation film with a short structure is produced by preparing a pair of transparent substrates made of a transparent material such as glass, and depositing S102 and TiO2 on one of the transparent substrates by electron beam evaporation. The structure was constructed by alternately laminating the transparent substrates by a method or the like, and pasting the other transparent substrate on top of this laminate.
第６図は、従来の偏光子の特性の一例を示す図であり、
Ｐ波及びＳ波についての消光比（ｄＢ）と光の波長（ｎ
ｍ ）との関係が示されている。ここで、Ｐ波は偏光面
が入射面に対して平行な偏光であり、Ｓ波は偏光面が入
射面に対して垂直な偏光である。FIG. 6 is a diagram showing an example of the characteristics of a conventional polarizer,
Extinction ratio (dB) and wavelength of light (n
m ) is shown. Here, the P wave is polarized light whose plane of polarization is parallel to the plane of incidence, and the S wave is polarized light whose plane of polarization is perpendicular to the plane of incidence.
この従来例では、Ｐ波及びＳ波について２５（ｄＢ）以
上の消光比を得ることができる帯域幅は１８０（ｎｍ
）であり、この帯域幅を得るために、多層膜の積層数を
２３以上としている。In this conventional example, the bandwidth for obtaining an extinction ratio of 25 (dB) or more for P waves and S waves is 180 (nm).
), and in order to obtain this bandwidth, the number of laminated layers of the multilayer film is set to 23 or more.
発明が解決しようとする課題
このように、従来技術であると、広い帯域幅を得るため
に、例えば２３層以上多層膜を積層する必要があり、蒸
着に長時間を要する等により製造が容易でないという問
題があった。Problems to be Solved by the Invention As described above, with the conventional technology, in order to obtain a wide bandwidth, it is necessary to laminate, for example, 23 or more multilayer films, and manufacturing is not easy because it takes a long time for vapor deposition. There was a problem.
本発明はこのような問題点に鑑みて創作されたもので、
帯域幅が広く且つ製造が容易な偏光子の提供を目的とし
ている。The present invention was created in view of these problems.
The purpose is to provide a polarizer that has a wide bandwidth and is easy to manufacture.
課題を解決するための手段
上述した技術的課題を解決するために、本発明では、高
屈折率材料として従来のＴｉ○２に代えてＳｉを使用す
ることにより、比較的少ない積層数で従来以上の帯域幅
を実現した。また、多層膜の積層構戊及び膜厚を最適化
することにより、Ｐ波及びＳ波ともに高い消光比を実現
した。Means for Solving the Problems In order to solve the above-mentioned technical problems, the present invention uses Si instead of the conventional Ti○2 as a high refractive index material. bandwidth. Furthermore, by optimizing the lamination structure and film thickness of the multilayer film, we achieved a high extinction ratio for both P and S waves.
第１図は本発明の偏光子の基本構戊を示す図である。FIG. 1 is a diagram showing the basic structure of the polarizer of the present invention.
本発明の偏光子は、第１及び第２の透明基板１．２間に
Ｓｉ層３及びＳｉｎ２層４を交互に奇数層積層して構戒
されている。The polarizer of the present invention is constructed by alternately laminating an odd number of Si layers 3 and Sin2 layers 4 between the first and second transparent substrates 1.2.
第１及び第２の透明基板１．２に直接接触する層はＳｉ
層３である。The layer in direct contact with the first and second transparent substrates 1.2 is Si.
This is layer 3.
そして、光の波長の４分の１に相当する厚みを１．０と
するときに、第１及び第２の透明基板１．２に直接接触
するＳｉ層３の厚みの設計値をＯ．４３、中央に位置す
るＳｉ層３の厚みの設計値を１．１６、その他のＳｉ層
３及びＳｉｎ，層４の厚みの設計値を１．０とし、各層
の厚みの偏差を±１．０％としている。When the thickness corresponding to a quarter of the wavelength of light is 1.0, the design value of the thickness of the Si layer 3 that directly contacts the first and second transparent substrates 1.2 is O. 43. The design value of the thickness of the Si layer 3 located in the center is 1.16, the design value of the thickness of the other Si layers 3, Sin, and layers 4 is 1.0, and the deviation of the thickness of each layer is ±1.0. %.
作 用
高屈折率材料としてＳｉを用い、低屈折率材料としてＳ
ｉ○２を用いているので、少ない積層数で広い帯域幅を
実現することができ、製造が容易になる。また、第１及
び第２の透明基板に直接接触する層をＳｉ層とし、各層
の膜厚を最適化しているので、Ｐ波及びＳ波について高
い消光比を得ることができる。Function: Si is used as a high refractive index material, and S is used as a low refractive index material.
Since i○2 is used, a wide bandwidth can be achieved with a small number of laminated layers, making manufacturing easier. Further, since the layer directly in contact with the first and second transparent substrates is a Si layer, and the film thickness of each layer is optimized, a high extinction ratio can be obtained for P waves and S waves.
実 施 例 以下本発明の実施例を図面に基づいて説明する。Example Embodiments of the present invention will be described below based on the drawings.
第２図は本発明の実施例を示す偏光子の構或図である。FIG. 2 is a diagram showing the structure of a polarizer showing an embodiment of the present invention.
この実施例では、第１及び第２の透明基板としてＢＫ−
７＜屈折率１．５１）からなる三角柱プリズム１１．１
２を用い、これら三角柱ブリズム１１．１２の斜面間に
偏光分離膜（多層膜）１３を介在させている。この偏光
子の製造方法としては、一方の三角柱プリズム１１の斜
面上に電子ビーム蒸着法等により偏光分離膜１３を形或
し、光学接着剤を用いて三角柱プリズム１１．１２を一
体化する方法を採用し得る。In this embodiment, BK-
7<refractive index 1.51) triangular prism 11.1
2, and a polarization separation film (multilayer film) 13 is interposed between the slopes of these triangular prisms 11 and 12. The method for manufacturing this polarizer is to form a polarization separation film 13 on the slope of one triangular prism 11 by electron beam evaporation or the like, and to integrate the triangular prisms 11 and 12 using an optical adhesive. Can be adopted.
偏光分離膜１３は、Ｓｉ及びＳｉｎ２をこの順で交互に
１７層積層して構威されている。各層の物質、屈折率及
び膜厚を表に示す。なお、表において、膜厚は、光の波
長（中心波長は１ ３ ５ Ｑｎｍ）の４分のｌを１．
０としたときの相対値である。The polarization separation film 13 is constructed by laminating 17 layers of Si and Sin2 alternately in this order. The material, refractive index, and film thickness of each layer are shown in the table. In addition, in the table, the film thickness is calculated by dividing 1/4 of the wavelength of light (center wavelength is 1 3 5 Qnm) by 1.
This is a relative value when it is set to 0.
各層の膜厚に変化がないとしたとき、つまり、表に示す
設計値通りの膜厚としたときの特性を第３図に示す．縦
軸は消光比（ｄＢ）、横軸は波長（ｎ＋ｎ）である。な
お、偏光分離膜１３への入射角は４５゜である。２５（
ｄＢ）以上の消光比を得ることができる帯域幅が２２５
（ｎｆｆｌ）となっており、積層数を従来の約３／４に
したにもかかわらず、従来例（第６図〉と比較して帯域
幅が拡大していることが明らかである。一般に、光学部
材上への電子ビーム蒸着法等による薄膜の形戒には長時
間を要するので、特性が同等またはそれ以上であれば積
層数が少ないほど！！造技術上有利であり、従って、製
造を容易化する上で本発明は極めて有効である。Figure 3 shows the characteristics when there is no change in the thickness of each layer, that is, when the thickness is as designed as shown in the table. The vertical axis is the extinction ratio (dB), and the horizontal axis is the wavelength (n+n). Note that the angle of incidence on the polarization separation film 13 is 45°. 25(
The bandwidth that can obtain an extinction ratio of more than 225 dB) is
(nffl), and it is clear that the bandwidth has expanded compared to the conventional example (Fig. 6) even though the number of laminated layers has been reduced to about 3/4 of that of the conventional example.In general, It takes a long time to form a thin film on an optical member by electron beam evaporation, etc., so as long as the characteristics are the same or better, the fewer the number of layers, the more advantageous it is from the viewpoint of manufacturing technology. The present invention is extremely effective in facilitating this.
次に、各層の厚みに許容される偏差について説明する。Next, the allowable deviation in the thickness of each layer will be explained.
なお、ここで満足すべき条件は、波長が１５００〜１６
００（ｒ＋＋ｎ）におけるＰ波及びＳ波の消光比が２５
（（ｆＢ）以上となることである。Note that the conditions to be satisfied here are that the wavelength is 1500 to 16
The extinction ratio of P wave and S wave at 00(r++n) is 25
((fB) or more.
第４図は、各層の厚みの偏差が±１％であるときに特性
曲線が取り得る範囲を示す図である。各層の厚みの偏差
が±１％であるときには、波長が１５０Ｏ〜１６００（
ｎｍ）の範囲においてＰ波及びＳ波の消光比が常に２５
（ｄＢ）以上となる。FIG. 4 is a diagram showing the possible range of the characteristic curve when the thickness deviation of each layer is ±1%. When the thickness deviation of each layer is ±1%, the wavelength is 150O~1600(
The extinction ratio of P waves and S waves is always 25 in the range (nm).
(dB) or more.
第５図は各層の厚みの偏差が±２％であるときに特性曲
線が取り得る範囲を示す図である。各層の厚みの偏差が
±２％であるときには、波長が１５００〜１６００（ｎ
ｍ）の範囲内において、Ｐ波の消光比が２５（ｄＢ）よ
りも小さくなることがある。FIG. 5 is a diagram showing the possible range of the characteristic curve when the thickness deviation of each layer is ±2%. When the thickness deviation of each layer is ±2%, the wavelength is 1500 to 1600 (n
m), the extinction ratio of P waves may become smaller than 25 (dB).
従って、偏光分離膜１３を構或している各層の厚みの偏
差が±１％の範囲内としておくことによって、波長が１
５００〜１６００（ｎｍ）の範囲内においてＰ波及びＳ
波の消光比を常に２５（ｄＢ）以上とすることができる
。Therefore, by keeping the thickness deviation of each layer constituting the polarization separation film 13 within ±1%, the wavelength can be reduced to 1%.
P waves and S waves within the range of 500 to 1600 (nm)
The extinction ratio of waves can always be 25 (dB) or more.
発明の効果
以上説明したように、本発明によれば、帯域幅が広く、
且つ、製造が容易な偏光子を提供することができるよう
になるという効果を奏する。Effects of the Invention As explained above, according to the present invention, the bandwidth is wide and
Moreover, it is possible to provide a polarizer that is easy to manufacture.
第１図は本発明の偏光子の基本構或図、第２図は本発明
の実施例を示す偏光子の構戊図、第３図は本発明の実施
例における特性図、第４図は本発明の実施例において各
層の厚みの偏差が±１％てあるときに特性曲線が取り得
る範囲を示す図、
第５図は本発明の実施例において各層の厚みの偏差が±
２％であるときに特性曲線が取り得る範囲を示す図、
第６図は従来の偏光子の特性の一例を示す図である。
１・・・第１の透明基板、 ２・・・第２の透明基板、
３・・・Ｓｉ層、 ４・・・ＳｉＯ２層、１１
．１２・・・三角柱プリズム、
ｌ３・・・偏光分離膜。Figure 1 is a diagram showing the basic structure of a polarizer of the present invention, Figure 2 is a diagram showing a configuration of a polarizer showing an embodiment of the present invention, Figure 3 is a characteristic diagram of an embodiment of the present invention, and Figure 4 is a diagram showing the characteristics of the embodiment of the present invention. Figure 5 shows the possible range of the characteristic curve when the thickness deviation of each layer is ±1% in the embodiment of the present invention.
2%. FIG. 6 is a diagram showing an example of the characteristics of a conventional polarizer. 1... First transparent substrate, 2... Second transparent substrate,
3...Si layer, 4...SiO2 layer, 11
．． 12...Triangular prism, l3...Polarized light separation film.
Claims (1)
びＳｉＯ＿２層（４）を交互に奇数層積層してなる偏光
子であって、 上記第１及び第２の透明基板（１、２）に直接接触する
層をＳｉ層（３）とし、 光の波長の４分の１に相当する厚みを１．０とするとき
に、上記第１及び第２の透明基板（１、２）に直接接触
するＳｉ層（３）の厚みの設計値を０．４３、中央に位
置するＳｉ層（３）の厚みの設計値を１．１６、その他
のＳｉ層（３）及びＳｉＯ＿２層（４）の厚みの設計値
を１．０とし、 各層の厚みの偏差を±１．０％の範囲内としたことを特
徴とする偏光子。[Claims] A polarizer comprising an odd number of Si layers (3) and SiO_2 layers (4) alternately laminated between first and second transparent substrates (1, 2), comprising: and the layer in direct contact with the second transparent substrate (1, 2) is the Si layer (3), and when the thickness corresponding to one-fourth of the wavelength of light is 1.0, the first and second transparent substrates (3) have a thickness of 1.0. The design value of the thickness of the Si layer (3) in direct contact with the transparent substrates (1, 2) of No. 2 is 0.43, the design value of the thickness of the Si layer (3) located in the center is 1.16, and the design value of the thickness of the Si layer (3) located in the center is 1.16. A polarizer characterized in that the design value of the thickness of the layer (3) and the SiO_2 layer (4) is 1.0, and the deviation of the thickness of each layer is within the range of ±1.0%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1154658A JP2741731B2 (en) | 1989-06-19 | 1989-06-19 | Polarizer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1154658A JP2741731B2 (en) | 1989-06-19 | 1989-06-19 | Polarizer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0321903A true JPH0321903A (en) | 1991-01-30 |
| JP2741731B2 JP2741731B2 (en) | 1998-04-22 |
Family
ID=15589053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1154658A Expired - Lifetime JP2741731B2 (en) | 1989-06-19 | 1989-06-19 | Polarizer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2741731B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6088159A (en) * | 1996-07-31 | 2000-07-11 | Weber; Michael F. | Reflective polarizers having extended red band edge for controlled off axis color |
| JP2009271546A (en) * | 2009-08-10 | 2009-11-19 | Epson Toyocom Corp | Beam splitter |
-
1989
- 1989-06-19 JP JP1154658A patent/JP2741731B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6088159A (en) * | 1996-07-31 | 2000-07-11 | Weber; Michael F. | Reflective polarizers having extended red band edge for controlled off axis color |
| JP2009271546A (en) * | 2009-08-10 | 2009-11-19 | Epson Toyocom Corp | Beam splitter |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2741731B2 (en) | 1998-04-22 |
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