JPH03211472A - Source voltage detecting circuit - Google Patents
Source voltage detecting circuitInfo
- Publication number
- JPH03211472A JPH03211472A JP2007444A JP744490A JPH03211472A JP H03211472 A JPH03211472 A JP H03211472A JP 2007444 A JP2007444 A JP 2007444A JP 744490 A JP744490 A JP 744490A JP H03211472 A JPH03211472 A JP H03211472A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- potential
- node
- power supply
- comparator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 claims description 14
- 238000010586 diagram Methods 0.000 description 5
- 238000007493 shaping process Methods 0.000 description 5
- 230000005669 field effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
Landscapes
- Power Sources (AREA)
- Measurement Of Current Or Voltage (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は電源電圧が印加されたことを検出する電源電圧
検出回路に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a power supply voltage detection circuit that detects the application of a power supply voltage.
従来の技術
半導体集積回路において、電源を立ち上げた際に動作が
不安定となり、そのため初期出力が確定されない回路が
ある。場合によってはこの回路の初期出力を確定させる
必要がある。2. Description of the Related Art Among conventional semiconductor integrated circuits, there are circuits whose operation becomes unstable when the power is turned on, and therefore the initial output is not determined. In some cases, it may be necessary to determine the initial output of this circuit.
第５図はこのような確定しない初期出力を有する回路に
出力確定用制御信号を供給する電源電圧検出回路のＭＯ
８型電界効果トランジスタを用いた従来例である。Figure 5 shows the MO of a power supply voltage detection circuit that supplies a control signal for determining the output to a circuit having such an undetermined initial output.
This is a conventional example using an 8-type field effect transistor.
第５図において、３３．３４は抵抗、３５．３６はＰチ
ャネル型のＭＯ８型電界効果トランジスタ（以下Ｐ型Ｍ
Ｏ３ＦＥＴと記す）、３７．３８゜３９はＮチャネル型
のＭＯ８型電界効果トランジスタ（以下Ｎ型ＭＯ８ＦＥ
Ｔと記す）、５０はコンパレータ、５１．５２はコンパ
レータ５０の入力端子、５３はコンパレータ５０の出力
端子、６０は波形整形用増幅器であり、６１は波形整形
用増幅器６０の出力端子である。In Fig. 5, 33.34 is a resistor, 35.36 is a P-channel type MO8 field effect transistor (hereinafter referred to as P-type M
37.38°39 is an N-channel type MO8 field effect transistor (hereinafter referred to as N-type MO8FE).
50 is a comparator, 51.52 is an input terminal of the comparator 50, 53 is an output terminal of the comparator 50, 60 is a waveform shaping amplifier, and 61 is an output terminal of the waveform shaping amplifier 60.
以上のように構成された従来の電源電圧検出回路につい
て、以下その動作を説明する。The operation of the conventional power supply voltage detection circuit configured as described above will be described below.
第５図において、抵抗３３．３４は電源電位ＶＯＯと接
地電位ＶＳＳ間に直列に接続され、これらによって電源
電位ＶＤＤを分圧した基準電位をコンパレータ５０の入
力端子５１に供給する。Ｐ型ＭＯ８ＦＥＴ３５．３６及
びＮ型ＭＯ５ＦＥＴ３７゜３８．３９はカレントミラー
回路構成され、Ｎ型ＭＯ３ＦＥＴ３９のドレイン電位を
コンパレータ５゜の入力端子５２に供給する。コンパレ
ータ５ｏの入力端子５２に入力される電圧値は、電源電
位ＶＤＤがある値より高くなり、Ｐ型ＭＯ８ＦＥＴ３６
゜Ｎ型Ｍ ＯＳ Ｆ Ｅ Ｔ ３７ 、３９に電流が流
れる状態においては、Ｎ型ＭＯ８ＦＥＴのしきい値電圧
をＶＴＮ、 Ｐ型ＭＯ８ＦＥＴのしきい値をｖＴＰとす
ると、はぼＶＤＤ−ＩＶＴＰＩ−ｌＶｒＮｌニ１ｔｆｓ
ｋ定される。In FIG. 5, resistors 33 and 34 are connected in series between the power supply potential VOO and the ground potential VSS, and thereby supply a reference potential obtained by dividing the power supply potential VDD to the input terminal 51 of the comparator 50. The P-type MO8FET 35.36 and the N-type MO5FET 37°38.39 constitute a current mirror circuit, and the drain potential of the N-type MO3FET 39 is supplied to the input terminal 52 of the comparator 5°. The voltage value input to the input terminal 52 of the comparator 5o becomes higher than a certain value of the power supply potential VDD, and the P-type MO8FET 36
゜In a state where current flows through the N-type MOSFETs 37 and 39, if the threshold voltage of the N-type MO8FET is VTN and the threshold voltage of the P-type MO8FET is vTP, then approximately VDD-IVTPI-lVrNl 1tfs
k is determined.
第６図に電源電圧に対するコンパレータ５ｏの各入力端
子電位の温度依存性を示す。電源電圧ＶＤＤを上げてい
き、ある値（以降リセット解除電圧値と記す）に達する
と、コンパレータ５ｏの入力端子５２に入力される入力
信号の電圧値が入力端子５１に入力される入力信号の電
圧値より大きくなり、コンパレータ５０の出力端子５３
の出力値が変化する。その出力信号は増幅器６０により
増幅されて出力端子６１から出力される。電源電圧印加
により半導体装置中の各回路に初期出力値を決定させる
リセット信号が加わり、出力端子６１の出力変化により
リセットが解除される。FIG. 6 shows the temperature dependence of each input terminal potential of the comparator 5o with respect to the power supply voltage. When the power supply voltage VDD is increased and reaches a certain value (hereinafter referred to as reset release voltage value), the voltage value of the input signal input to the input terminal 52 of the comparator 5o becomes the voltage of the input signal input to the input terminal 51. output terminal 53 of the comparator 50.
The output value of changes. The output signal is amplified by an amplifier 60 and output from an output terminal 61. By applying a power supply voltage, a reset signal is applied to each circuit in the semiconductor device to determine an initial output value, and the reset is canceled by a change in the output of the output terminal 61.
発明が解決しようとする課題
前記従来の構成では、入力端子５２に入力される出力値
が電源電圧及びＰ型ＭＯ８ＦＥＴのしきい値電圧とＮ型
ＭＯ８ＦＥＴのしきい値電圧によって決まるためにしき
い値電圧の温度依存性がそのまま反映される。第６図に
示すように高温時にはしきい値電圧は小さくなり、出力
端子５３にリセット解除信号を出力するときのリセット
解除電圧値が設定値より小さくなり、パルス幅が狭くリ
セットパルスとして認識されない場合がある。Problems to be Solved by the Invention In the conventional configuration, the output value input to the input terminal 52 is determined by the power supply voltage, the threshold voltage of the P-type MO8FET, and the threshold voltage of the N-type MO8FET. The temperature dependence of is directly reflected. As shown in FIG. 6, when the temperature is high, the threshold voltage becomes small, and the reset release voltage value when outputting the reset release signal to the output terminal 53 becomes smaller than the set value, and the pulse width is narrow and it is not recognized as a reset pulse. There is.
本発明は上記問題点を解決するもので、リセット解除電
圧値の温度依存性を小さくすることを目的とする。The present invention solves the above problems, and aims to reduce the temperature dependence of the reset release voltage value.
課題を解決するための手段
この目的を達成するために本発明の電源電圧検出回路は
コンパレータのどちらが一方の入力端子に入力する電圧
を決めるのに、ダイオードと抵抗を用い、しきい値電圧
の温度依存性と移動度の温度依存性とを相殺させる構成
になっている。Means for Solving the Problems To achieve this object, the power supply voltage detection circuit of the present invention uses a diode and a resistor to determine which voltage is input to one input terminal of the comparator, and uses a diode and a resistor to The configuration is such that the temperature dependence of the mobility and the temperature dependence of the mobility are offset.
作用
この構成にすればコンパレータの入力電圧は温度依存性
を持たず、コンパレータの出力であるところのリセット
パルスも温度依存性を持たない。Effect: With this configuration, the input voltage of the comparator has no temperature dependence, and the reset pulse, which is the output of the comparator, also has no temperature dependence.
実施例
以下本発明の実施例について図面にもとづいて説明する
。第１図は、本発明の一実施例であり、ダイオード手段
としてドレインとゲートを接続したＭＯＳＦＥＴを用い
た場合を示す。EXAMPLES Below, examples of the present invention will be described based on the drawings. FIG. 1 shows an embodiment of the present invention, in which a MOSFET whose drain and gate are connected is used as the diode means.
第１図において電源電位ｖＤＤと接地電位ＶＳＳの間を
第１のノード１を介してＭＯ８ＦＥＴＩＩと抵抗１２を
直列接続し、また第２のノード２を介して抵抗１３と抵
抗１４を直列接続し、前記第１のノード１と前記第２の
ノード２をそれぞれコンパレータの入力端子５１および
５２に接続し、コンパレータ結果を波形整形用増幅器５
０を通して出力する構成である。第２図は電源電圧に対
する前記ノード１の温度依存性を示す。In FIG. 1, a MO8FET II and a resistor 12 are connected in series between a power supply potential vDD and a ground potential VSS via a first node 1, and a resistor 13 and a resistor 14 are connected in series via a second node 2. The first node 1 and the second node 2 are connected to input terminals 51 and 52 of a comparator, respectively, and the comparator results are sent to a waveform shaping amplifier 5.
It is configured to output through 0. FIG. 2 shows the temperature dependence of the node 1 on the power supply voltage.
第３図は、電源電圧に対する前記コンパレータ５０の各
入力端子電位の温度依存性を示す。FIG. 3 shows the temperature dependence of each input terminal potential of the comparator 50 with respect to the power supply voltage.
以下第１図、第２図及び第３図を用いて、本発明の電源
電圧検出回路の動作を説明する。The operation of the power supply voltage detection circuit of the present invention will be described below with reference to FIGS. 1, 2, and 3.
電源電圧ＶＤＤが接地電位からＭＯＳＦＥＴのしきい値
電圧に達するまではＭＯＳＦＥＴは非導通状態で、第１
のノード１の電圧は、電源電圧ｖＤＤである。また第２
のノード２は抵抗１３と抵抗１４とに分圧された電位に
なる。Until the power supply voltage VDD reaches the threshold voltage of the MOSFET from the ground potential, the MOSFET is in a non-conducting state and the first
The voltage at node 1 is the power supply voltage vDD. Also the second
The node 2 has a potential divided between the resistors 13 and 14.
電源電圧ＶＤＤがＭＯＳＦＥＴのしきい値電圧以上にな
ると、ＭＯ５ＦＥＴＩＩが導通状態となり、抵抗とＭＯ
ＳＦＥＴの飽和特性によって分圧された電位が第１のノ
ード１に出力される。When the power supply voltage VDD becomes equal to or higher than the threshold voltage of the MOSFET, MO5FETII becomes conductive, and the resistance and MOSFET become conductive.
A voltage divided by the saturation characteristic of the SFET is output to the first node 1 .
電源電圧ｖＤＤに対する第１のノード１の電位は、第２
図のように、温度変化に依存しない点Ａが存在し、この
点Ａは、ＭＯ８ＦＥＴＩＩ及び抵抗１２の形状を変えれ
ば、第２図中の点線上を動くことになる。The potential of the first node 1 with respect to the power supply voltage vDD is
As shown in the figure, there is a point A that does not depend on temperature changes, and if the shapes of the MO8FET II and the resistor 12 are changed, this point A will move on the dotted line in FIG. 2.
抵抗分圧によるノード２の電位は、温度依存性がなく、
分圧電位は抵抗の形状により自由に決定できる。電源電
圧ＶＤＤがリセット解除電圧値に達したときに、前記ノ
ード１の電位が温度依存性をもたなくなるように、ＭＯ
８ＦＥＴＩＩと抵抗１２の形状を決定し、前記ノード２
の電位も同時にノード１と同電位になるように抵抗１３
と抵抗１４との形状を決定しておく。そうすると、電源
電位ＶＤＤが大きくなり、リセット解除電圧値以上にな
ると、入力端子５１及び５２の電位の大小関係が反転す
る。コンパレータ５０の出力は、電源電圧が印加され、
リセット解除電圧に達するまでの期間、リセットパルス
を出力する。この出力は、波形整形用増幅器６０により
波形整形され、出力より他の回路にリセット信号を伝達
する。The potential of node 2 due to resistor voltage division has no temperature dependence,
The divided potential can be freely determined depending on the shape of the resistor. When the power supply voltage VDD reaches the reset release voltage value, the MO
8FETII and the shape of the resistor 12 are determined, and the shape of the node 2 is determined.
resistor 13 so that the potential of node 1 is also the same potential as node 1.
The shapes of the resistor 14 and the resistor 14 are determined in advance. Then, when the power supply potential VDD increases and exceeds the reset release voltage value, the magnitude relationship between the potentials of the input terminals 51 and 52 is reversed. The output of the comparator 50 is applied with the power supply voltage,
A reset pulse is output until the reset release voltage is reached. This output is waveform-shaped by a waveform-shaping amplifier 60, and a reset signal is transmitted from the output to other circuits.
第４図は本発明の他の実施例であり、ダイオード手段と
してドレインとゲートを接続したＰ型ＭＯ３ＦＥＴ２１
と抵抗２２により温度依存性をもたない電位をコンパレ
ータ５０の入力端子５２に与えるものであり、原理は第
１図に示した実施例と同じである。なお、以上の実施例
では、ダイオード手段としてＭＯＳＦＥＴを使用したが
、他にも、ダイオードとして動作するように接続された
バイポーラトランジスタを用いてもよい。FIG. 4 shows another embodiment of the present invention, in which a P-type MO3FET 21 whose drain and gate are connected as a diode means.
A potential having no temperature dependence is applied to the input terminal 52 of the comparator 50 by the resistor 22 and the resistor 22, and the principle is the same as that of the embodiment shown in FIG. In the above embodiments, a MOSFET is used as the diode means, but a bipolar transistor connected to operate as a diode may also be used.
発明の詳細
な説明したように本発明は、電源電圧によって回路網に
制御用信号を出力する電源電圧検出回路において、リセ
ット電圧値を仕様に合わせて定めることができ、かつ温
度依存性を最小限にすることを可能にしている。DETAILED DESCRIPTION OF THE INVENTION As described in detail, the present invention enables a reset voltage value to be determined according to specifications in a power supply voltage detection circuit that outputs a control signal to a circuit network based on the power supply voltage, and also minimizes temperature dependence. It makes it possible to
第１図は本発明の一実施例における電源電圧検出回路の
回路図、第２図は本発明の一実施例における電源電圧検
出回路の電圧検出部のノード電位の特性図、第３図は本
発明の一実施例における電源電圧検出回路のコンパレー
タ入力端子５１．５２に入力される電圧値と電源電圧の
関係を示す特性例の電源電圧検出回路の回路図、第６図
は従来例の電源電圧検出回路のコンパレータ入力端子に
入力される電圧値と電源電圧の関係を示す特性図である
。
１１・・・・・・Ｎ型ＭＯ８ＦＥＴ、１２，１３．１４
・・・・・・抵抗、５０・・・・・・コンパレータ、６
０・・・・・・波形整形用増幅器、ＶＯＯ・・・・・・
電源電圧、５１．５２・・・・・・コンパレータの入力
端子。FIG. 1 is a circuit diagram of a power supply voltage detection circuit according to an embodiment of the present invention, FIG. 2 is a characteristic diagram of the node potential of the voltage detection section of the power supply voltage detection circuit according to an embodiment of the present invention, and FIG. A circuit diagram of a power supply voltage detection circuit as a characteristic example showing the relationship between the voltage value input to the comparator input terminals 51 and 52 of the power supply voltage detection circuit in one embodiment of the invention and the power supply voltage, FIG. 6 is a circuit diagram of the power supply voltage detection circuit of the conventional example. FIG. 3 is a characteristic diagram showing the relationship between the voltage value input to the comparator input terminal of the detection circuit and the power supply voltage. 11...N-type MO8FET, 12, 13.14
...Resistance, 50 ...Comparator, 6
0... Waveform shaping amplifier, VOO...
Power supply voltage, 51.52...Comparator input terminal.
Claims (1)
れたダイオード手段と、前記第１のノードと他方の電源
端子との間に接続された第１の抵抗手段と、前記一方の
電源端子と第２のノードとの間に接続された第２の抵抗
手段と、前記第２のノードと前記他方の電源端子との間
に接続された第３の抵抗手段と、前記第１のノードの電
位と前記第２のノードの電位の一致を検出する手段を有
し、前記第１のノードの電位が温度依存性をもたなくな
る電位に達したときに前記第２のノードの電位もその電
位となるべく前記第２の抵抗手段と前記第３の抵抗手段
の抵抗値が選択されている電源電圧検出回路。a diode means connected in a forward direction between one power supply terminal and a first node; a first resistance means connected between the first node and the other power supply terminal; a second resistance means connected between the power supply terminal and the second node; a third resistance means connected between the second node and the other power supply terminal; means for detecting coincidence of the potential of the node and the potential of the second node, and when the potential of the first node reaches a potential that has no temperature dependence, the potential of the second node also increases. A power supply voltage detection circuit in which resistance values of the second resistor means and the third resistor means are selected so as to attain that potential.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007444A JPH03211472A (en) | 1990-01-17 | 1990-01-17 | Source voltage detecting circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007444A JPH03211472A (en) | 1990-01-17 | 1990-01-17 | Source voltage detecting circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03211472A true JPH03211472A (en) | 1991-09-17 |
Family
ID=11666017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007444A Pending JPH03211472A (en) | 1990-01-17 | 1990-01-17 | Source voltage detecting circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03211472A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009079947A (en) * | 2007-09-26 | 2009-04-16 | Fujitsu Microelectronics Ltd | Supply voltage detection circuit |
| JP2012107982A (en) * | 2010-11-17 | 2012-06-07 | Fujitsu Semiconductor Ltd | Power supply voltage determination circuit |
| WO2013042285A1 (en) * | 2011-09-22 | 2013-03-28 | パナソニック株式会社 | Voltage detecting circuit and voltage regulator apparatus provided with same |
-
1990
- 1990-01-17 JP JP2007444A patent/JPH03211472A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009079947A (en) * | 2007-09-26 | 2009-04-16 | Fujitsu Microelectronics Ltd | Supply voltage detection circuit |
| JP2012107982A (en) * | 2010-11-17 | 2012-06-07 | Fujitsu Semiconductor Ltd | Power supply voltage determination circuit |
| WO2013042285A1 (en) * | 2011-09-22 | 2013-03-28 | パナソニック株式会社 | Voltage detecting circuit and voltage regulator apparatus provided with same |
| JPWO2013042285A1 (en) * | 2011-09-22 | 2015-03-26 | パナソニックＩｐマネジメント株式会社 | Voltage detection circuit and voltage regulator device including the same |
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