JPH03208348A - Presence/absence detector for semiconductor element - Google Patents
Presence/absence detector for semiconductor elementInfo
- Publication number
- JPH03208348A JPH03208348A JP306290A JP306290A JPH03208348A JP H03208348 A JPH03208348 A JP H03208348A JP 306290 A JP306290 A JP 306290A JP 306290 A JP306290 A JP 306290A JP H03208348 A JPH03208348 A JP H03208348A
- Authority
- JP
- Japan
- Prior art keywords
- absence
- semiconductor element
- output
- collet
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000006243 chemical reaction Methods 0.000 claims abstract description 7
- 230000003321 amplification Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
Landscapes
- Die Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体製品の製造工程における半導体素子の有
無検出装置に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an apparatus for detecting the presence or absence of a semiconductor element in the manufacturing process of semiconductor products.
従来の技術
従来、半導体製品の製造工程において、半導体素子の搬
送にはコレットと称する治具に真空吸着により装着しで
いるが、確実に吸着されたが否かの検出が必要である。2. Description of the Related Art Conventionally, in the manufacturing process of semiconductor products, semiconductor devices are transported by attaching them to a jig called a collet by vacuum suction, but it is necessary to detect whether or not they have been reliably suctioned.
従来の買手導体素子の有無検出は、半導体素子に光を当
て、その反射光を増幅し、有無判定電圧と比較し、半導
体素子の有無検出を行なうことがよ（行なわれている。Conventional methods for detecting the presence or absence of a semiconductor element include shining light on the semiconductor element, amplifying the reflected light, and comparing the reflected light with a presence/absence determination voltage to detect the presence or absence of the semiconductor element.
第３図は従来例の半導体素子の有無検出装置のブロック
ダイヤグラムで、図によってその構成と動作を説明する
と、コレット１が半導体素子２を装着して投光器３と受
光素子４とからなる光電変換回路を通過する際、投光器
３から発した光がコレット１と半導体素子２で反射され
た光を受光素子４で信号に変換し、増幅回路５で増幅し
た信号を電圧比較器７に加え、有無判定電圧６と比較し
て有無判定結果を得る。FIG. 3 is a block diagram of a conventional device for detecting the presence or absence of a semiconductor element. To explain its configuration and operation with reference to the diagram, a collet 1 has a semiconductor element 2 attached thereto, and a photoelectric conversion circuit consisting of a light emitter 3 and a light receiving element 4. When passing through, the light emitted from the projector 3 is reflected by the collet 1 and the semiconductor element 2, and the light is converted into a signal by the light receiving element 4.The amplified signal is applied to the voltage comparator 7 by the amplifier circuit 5, and presence/absence is determined. Compare with voltage 6 to obtain a presence/absence determination result.
この反射光量と時間との関係を第２図ａ、ｂに示す。こ
のようにコレットに半導体素子の有無によって反射光量
も変化するが、コレットからも反射があり、検出結果は
微妙なものとなる。The relationship between the amount of reflected light and time is shown in FIGS. 2a and 2b. In this way, the amount of reflected light changes depending on the presence or absence of a semiconductor element in the collet, but since there is also reflection from the collet, the detection results will be subtle.
発明が解決しようとする課題
このような従来の装置では、コレットの周辺部の形状に
よっては、コレットの周辺部の反射が半導体素子の反射
より大きくなり、反射の大小のみでの半導体素子の有無
検出を行なうことは困難であった。Problems to be Solved by the Invention In such conventional devices, depending on the shape of the collet's periphery, the reflection from the collet's periphery can be larger than the reflection from the semiconductor element, making it difficult to detect the presence or absence of a semiconductor element based only on the magnitude of reflection. It was difficult to do so.
本発明はこのような問題を解決しようとするもので、コ
レットの周辺部の反射が半導体素子より大きくなった場
合でも半導体素子の有無検出を可能にする半導体素子の
有無検出装置を提供するものである。The present invention is an attempt to solve such problems, and provides a device for detecting the presence or absence of a semiconductor element that can detect the presence or absence of a semiconductor element even when the reflection at the peripheral part of the collet is larger than the semiconductor element. be.
課題を解決するための手段
本発明は上記問題点を解決するため、反射信号を、積分
器により積分する手段と、この積分出力を有無判定電圧
と比較する手段を備えてなる半導体素子の有無検出装置
の構成としたものである。Means for Solving the Problems In order to solve the above problems, the present invention provides a method for detecting the presence or absence of a semiconductor element, comprising means for integrating a reflected signal using an integrator, and means for comparing the integrated output with a presence/absence determination voltage. This is the configuration of the device.
作用
本発明は上記の構成により、半導体素子を吸着している
場合は積分器の特性から、積分出力はコレット周辺部の
反射量と半導体素子の反射量を積分したものとなり、半
導体素子を吸着していない場合の積分出力は、コレット
全体の反射量となり、半導体素子の有無による積分出力
の差は、コレット周辺部の反射量の影響を受けず、半導
体素子の有無による差のみとなり、積分出力を有無判定
電圧と比較することにより、半導体素子の有無を明確に
判定できる。Effect of the present invention With the above-described configuration, when a semiconductor element is being attracted, the integrated output is the integral of the amount of reflection around the collet and the amount of reflection from the semiconductor element due to the characteristics of the integrator. The integral output when the collet is not used is the reflection amount of the entire collet, and the difference in the integral output due to the presence or absence of the semiconductor element is not affected by the reflection amount around the collet, and is only the difference due to the presence or absence of the semiconductor element. By comparing with the presence/absence determination voltage, the presence/absence of the semiconductor element can be clearly determined.
実施例
以下本発明の一実施例について、図面を用いてその構成
と動作を説明する。第１図は本発明の半導体素子の有無
検出装置の一実施例を示すブロック図である。図に示す
ように半導体素子２を吸着したコレット１は、投光器３
と受光素子４で構成される光電変換回路を通過するよう
になっており、この通過する際の反射光は光電変換され
るようになっている。前記光電変換して得られる反射信
号５１は増幅回路５で増幅され、出力端子に増幅信号５
２が出力される。増幅信号５２は積分器８の入力信号８
１として入力され積分され、積分出力８２を積分出力端
子に得る。電圧比較器７の入力端子７１と７２により、
積分出力８２と有無判定電圧６ａの出力６１を入力して
比較し、出力端子７３に半導体素子の有無判定結果出力
９を得る。EXAMPLE Below, the structure and operation of an example of the present invention will be explained using the drawings. FIG. 1 is a block diagram showing an embodiment of a device for detecting the presence or absence of a semiconductor element according to the present invention. As shown in the figure, the collet 1 that has attracted the semiconductor element 2 is attached to the projector 3.
The light passes through a photoelectric conversion circuit composed of a light receiving element 4 and a light receiving element 4, and the reflected light when passing through is photoelectrically converted. The reflected signal 51 obtained by the photoelectric conversion is amplified by the amplifier circuit 5, and the amplified signal 5 is output to the output terminal.
2 is output. The amplified signal 52 is the input signal 8 of the integrator 8
It is input as 1 and integrated, and an integral output 82 is obtained at the integral output terminal. By input terminals 71 and 72 of voltage comparator 7,
The integral output 82 and the output 61 of the presence/absence determination voltage 6a are inputted and compared, and a semiconductor element presence/absence determination result output 9 is obtained at the output terminal 73.
第２図ａ、ｂ、ｃに半導体素子が有りの場合と、無しの
場合の反射光量の差と積分出力の差を示す。FIGS. 2a, b, and c show the difference in the amount of reflected light and the difference in integrated output between the cases with and without the semiconductor element.
発明の効果
以上の実施例の説明からも明らかなように、本発明によ
れば、検出電圧を増幅してそのまま判定電圧と比較する
のではなく、いったん積分した後に判定電圧と比較する
というきわめて簡易な手段で、コレット周辺部の反射量
の影響を相殺し、安定して半導体素子の有無検出を行な
うことが可能であり、実用的にきわめて有用である。Effects of the Invention As is clear from the description of the embodiments above, according to the present invention, the detection voltage is not amplified and directly compared with the judgment voltage, but is integrated and then compared with the judgment voltage, which is extremely simple. By this means, it is possible to offset the influence of the amount of reflection around the collet and stably detect the presence or absence of a semiconductor element, which is extremely useful in practice.
第１図は本発明一実施例の半導体素子の有無検出装置を
示すブロック図、第２図ａ、ｂ、ｃは第１図に示す実施
例での波形図、第３図は従来の半導体素子の有無検出装
置のブロック図である。
１・・・・・・コレット、２・・・・・・半導体素子、
３・・・・・・投光器、４受光素子、５・・・・・・増
幅回路、５１・・・・・・反射信号、６ａ・・・・・・
有無判定電圧、７・・・・・・電圧比較器、８・・・・
・・積分器、８２・・・・・・積分出力、９有無判定結
果。
第２図Fig. 1 is a block diagram showing a device for detecting the presence or absence of a semiconductor element according to an embodiment of the present invention, Fig. 2 a, b, and c are waveform diagrams in the embodiment shown in Fig. 1, and Fig. 3 is a conventional semiconductor element. FIG. 2 is a block diagram of a presence/absence detection device. 1... Collet, 2... Semiconductor element,
3... Emitter, 4 Light receiving element, 5... Amplifier circuit, 51... Reflected signal, 6a...
Presence/absence determination voltage, 7...Voltage comparator, 8...
... Integrator, 82... Integral output, 9 presence/absence determination result. Figure 2
Claims (1)
前記半導体素子からの、反射光を受光して光電変換する
光電変換手段と、光電変換して得た信号を積分する手段
と、前記積分した信号を有無判定電圧と比較する手段よ
りなる半導体素子の有無検出装置。a light emitter for projecting light onto the semiconductor element adsorbed by the collet; a photoelectric conversion means for receiving and photoelectrically converting reflected light from the semiconductor element; a means for integrating a signal obtained by photoelectric conversion; and a means for integrating the signal obtained by photoelectric conversion. An apparatus for detecting the presence or absence of a semiconductor element, comprising means for comparing the voltage and the presence/absence determination voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP306290A JPH03208348A (en) | 1990-01-10 | 1990-01-10 | Presence/absence detector for semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP306290A JPH03208348A (en) | 1990-01-10 | 1990-01-10 | Presence/absence detector for semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03208348A true JPH03208348A (en) | 1991-09-11 |
Family
ID=11546841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP306290A Pending JPH03208348A (en) | 1990-01-10 | 1990-01-10 | Presence/absence detector for semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03208348A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7045803B2 (en) * | 2003-07-11 | 2006-05-16 | Asm Assembly Automation Ltd. | Missing die detection |
-
1990
- 1990-01-10 JP JP306290A patent/JPH03208348A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7045803B2 (en) * | 2003-07-11 | 2006-05-16 | Asm Assembly Automation Ltd. | Missing die detection |
| KR100671729B1 (en) * | 2003-07-11 | 2007-01-22 | 에이에스엠 어쌤블리 오토메이션 리미티드 | Missing die detection |
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