JPH03208338A - Microwave plasma treatment device - Google Patents
Microwave plasma treatment deviceInfo
- Publication number
- JPH03208338A JPH03208338A JP270990A JP270990A JPH03208338A JP H03208338 A JPH03208338 A JP H03208338A JP 270990 A JP270990 A JP 270990A JP 270990 A JP270990 A JP 270990A JP H03208338 A JPH03208338 A JP H03208338A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- chamber
- plates
- processing
- shielding plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009832 plasma treatment Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 7
- 235000012431 wafers Nutrition 0.000 abstract description 10
- 238000010438 heat treatment Methods 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 238000004380 ashing Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 235000002918 Fraxinus excelsior Nutrition 0.000 description 1
- 101000697856 Rattus norvegicus Bile acid-CoA:amino acid N-acyltransferase Proteins 0.000 description 1
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000002956 ash Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002618 waking effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
マイクロ波を導入してプラズマを発生させ、複数の貫通
孔を分散配置した導電体のプラズマ遮蔽板で前記プラズ
マの発生領域を隔離し、該プラズマ発生領域で生成して
該貫通孔を通過した中性活性種で被加工物の加工処理を
行うマイクロ波プラズマ処理装置に関し、
加工処理を連続的に行っても前記プラズマ遮蔽板が熱変
形を起こさないようにすることを目的とし、
複数の前記プラズマ遮蔽板を具えて、前記プラズマ発生
領域を隔離するプラズマ遮蔽板を随時に交換する構成を
なすように構成する。[Detailed Description of the Invention] [Summary] Microwaves are introduced to generate plasma, the plasma generation area is isolated with a conductive plasma shielding plate in which a plurality of through holes are distributed, and the plasma generation area is isolated. Regarding a microwave plasma processing apparatus that processes a workpiece using neutral active species generated in the process and passed through the through hole, the plasma shielding plate is designed to prevent thermal deformation even when processing is performed continuously. The present invention is configured to include a plurality of the plasma shielding plates, and to replace the plasma shielding plates that isolate the plasma generation area as needed.
本発明は、マイクロ波を導入してプラズマを発生させ、
複数の貫通孔を分散配置した導電体のプラズマ遮蔽板で
前記プラズマの発生領域を隔離し、該プラズマ発生領域
で生成して該貫通孔を通過した中性活性種で被加工物の
加工処理を行うマイクロ波プラズマ処理装置に関する。The present invention introduces microwaves to generate plasma,
The plasma generation region is isolated by a conductive plasma shielding plate having a plurality of through holes distributed therein, and the workpiece is processed using neutral active species generated in the plasma generation region and passed through the through holes. The present invention relates to a microwave plasma processing apparatus.
上記マイクロ波プラズマ処理装置は、近年、半導体装置
製造のウェーハプロセスにおいて、レジスト膜アッシン
グなどの基板処理に使用されるようになってきたもので
ある。The microwave plasma processing apparatus described above has recently come to be used for substrate processing such as resist film ashing in a wafer process for manufacturing semiconductor devices.
第２図は前記マイクロ波プラズマ処理装置の従来例の側
断面図である。FIG. 2 is a side sectional view of a conventional example of the microwave plasma processing apparatus.
第２図において、チャンバ１は、石英窓２及びその下の
プラズマ遮蔽板３で仕切られて、上からマイクロ波導入
室Ａ、プラズマ発生室Ｂ、処理室Ｃを構成している。In FIG. 2, a chamber 1 is partitioned by a quartz window 2 and a plasma shielding plate 3 below, and constitutes a microwave introduction chamber A, a plasma generation chamber B, and a processing chamber C from above.
プラズマ遮蔽板３は、導電体例えばアルミニウムからな
り、厚さが３ｍｍ程度、大きさが３ｏｃｌｌｌφ程度で
あって、１０００個程度０貫通孔４（口径約１ｍｍ）を
分布配置しである。The plasma shielding plate 3 is made of a conductive material such as aluminum, has a thickness of about 3 mm, a size of about 3 occlllφ, and has about 1000 through holes 4 (diameter about 1 mm) distributed therein.
そして、処理室Ｃ内でプラズマ遮蔽板３に対向させた加
熱ステージ５上に被加工物であるウェーハＳをＲ置して
加熱し、ガス導入口６がらプラズマ発注室Ｂに反応ガス
を導入すると共に排気管７から処理室Ｃを排気しながら
、導波管８がらマイクロ波導入室Ａにマイクロ波Ｍを導
入することによりウェーハＳの加工処理が行われる。Then, a wafer S as a workpiece is placed R on a heating stage 5 facing the plasma shielding plate 3 in the processing chamber C and heated, and a reaction gas is introduced into the plasma ordering chamber B through the gas inlet 6. At the same time, processing of the wafer S is performed by introducing the microwave M into the microwave introducing chamber A through the waveguide 8 while evacuating the processing chamber C from the exhaust pipe 7.
即ち、マイクロ波導入室Ａに導入されたマイクロ波Ｍの
作用により、プラズマ発生室Ｂ内の反応ガスがプラズマ
化し、そこに生成された中性活性種が貫通孔４を通過し
てウェーハＳを加工する。That is, due to the action of the microwave M introduced into the microwave introduction chamber A, the reaction gas in the plasma generation chamber B is turned into plasma, and the neutral active species generated there pass through the through hole 4 and touch the wafer S. Process.
この処理装置を用いた加工処理の１例は、ウェーハＳに
塗布したレジスト膜の０２ダウンフローアツシングであ
り、その条件は次の如くである。An example of processing using this processing apparatus is 02 downflow ashes of a resist film applied to a wafer S, and the conditions are as follows.
ステージ温度 ：１６０ °Ｃ
Ｏ□流量 ： Ｉ ＳＬＭ圧力
： ０．８ Ｔｏｒｒマイクロ波周波数：
２．４５ ＧＨｚマイクロ波出力 ： １
．５ Ｋ匈処理時間 ・ ５ 分
（発明が解決しようとする課題］
ところで上述の従来例は、上記アッシングを複数のウェ
ーハＳに対して連続的に行おうとすると、３回の処理を
行ったところで、即ちマイクロ波Ｍの５分間導入を３回
続けたところで、プラズマ遮蔽板３がプラズマにより加
熱して例えば第３図に示すような熱変形を起こしてしま
う。このため、プラズマ遮蔽Ｆｉ３が熱変形を起こす前
に休憩時間を設ける必要が生して生産性が低下するとい
う問題がある。Stage temperature: 160 °C O□Flow rate: I SLM pressure
: 0.8 Torr microwave frequency:
2.45 GHz microwave output: 1
．． 5K processing time - 5 minutes (Problem to be solved by the invention) By the way, in the above-mentioned conventional example, when the above-mentioned ashing is attempted to be performed continuously on a plurality of wafers S, after performing the processing three times, That is, when the microwave M is continuously introduced for 5 minutes three times, the plasma shielding plate 3 is heated by the plasma, causing thermal deformation as shown in FIG. There is a problem in that it is necessary to take a break before waking up, which reduces productivity.
そこで本発明は、上述のようなマイクロ波プラズマ処理
装置において、加工処理を連続的に行ってもプラズマ遮
蔽板が熱変形を起こさないようにすることを目的とする
。Therefore, an object of the present invention is to prevent the plasma shielding plate from being thermally deformed even when processing is continuously performed in the above-mentioned microwave plasma processing apparatus.
（課題を解決するための手段〕
上記目的は、マイクロ波を導入してプラズマを発生させ
、複数の貫通孔を分散配置した導電体のプラズマ遮蔽板
で前記プラズマの発生領域を隔離し、該プラズマ発生領
域で生成して該貫通孔を通過した中性活性種で被加工物
の加工処理を行う装置であって、複数の前記プラズマ遮
蔽板を具えて、前記プラズマ発生領域を隔離するプラズ
マ遮蔽板を随時に交換する構成をなす本発明のマイクロ
波プラズマ処理装置によって達成される。(Means for Solving the Problems) The above object is to generate plasma by introducing microwaves, isolate the plasma generation area with a conductive plasma shielding plate having a plurality of through holes distributed, and generate the plasma. A device for processing a workpiece using neutral active species generated in a generation region and passed through the through hole, the plasma shielding plate comprising a plurality of the plasma shielding plates and isolating the plasma generation region. This is achieved by the microwave plasma processing apparatus of the present invention, which is configured to replace the plasma as needed.
［作 用］
プラズマ発生領域を遮蔽するプラズマ遮蔽板は、プラズ
マにより加熱される時間が短い間は熱変形を起こさない
。[Function] The plasma shielding plate that shields the plasma generation area does not undergo thermal deformation while it is heated by plasma for a short time.
従って、その熱変形を起こす前にそのプラズマ遮蔽板を
交換すれば、外されたプラズマ遮蔽板は加熱前の温度に
復帰するので、その交換を繰り返すことにより、加工処
理を連続的に行ってもプラズマ遮蔽板が熱変形を起こさ
ないようになる。Therefore, if the plasma shielding plate is replaced before the thermal deformation occurs, the removed plasma shielding plate will return to the temperature before heating, so by repeating the replacement, even if processing is performed continuously. This prevents the plasma shielding plate from being thermally deformed.
（実施例〕
以下本発明によるマイクロ波プラズマ処理装置の実施例
について第１図（ａ）（ｂ）の側断面図と部分平面図を
用いて説明する。全図を通し同一符号は同一対象物を示
す。(Example) An example of the microwave plasma processing apparatus according to the present invention will be described below using side sectional views and partial plan views shown in FIGS. 1(a) and 1(b). shows.
第１図において、この実施例は、第２図で説明した処理
装置の一部変更であり、その変更点は、複数のプラズマ
遮蔽板３を具えて、プラズマ発生領域Ｂを隔離するプラ
ズマ遮蔽板３を随時に交換するように構成した点である
。In FIG. 1, this embodiment is a partial modification of the processing apparatus described in FIG. 3 is configured so that it can be replaced at any time.
即ち、４個のプラズマ遮蔽板３が同一平面上に（ｂ）の
如く円装置されて、その中の１個がプラズマ発生領域を
遮蔽する位置（プラズマ発生室Ｂと処理室Ｃを仕切る位
置）にあり、上記円装置を回転することによりプラズマ
遮蔽板３が交換されて、他の１個が上記位置に収まるよ
うにしである。図中の９８はプラズマ遮蔽板３を上記円
装置に支える支持アームであり、９ｂは上記回転のため
の回転アクチエータ（例えばパルスモータなど）である
。That is, four plasma shielding plates 3 are arranged in a circular arrangement on the same plane as shown in FIG. By rotating the circular device, the plasma shielding plate 3 is replaced, and another one is placed in the above position. In the figure, 98 is a support arm that supports the plasma shielding plate 3 on the circular device, and 9b is a rotation actuator (for example, a pulse motor) for the rotation.
また、Ｉａは、従来例のチャンバ１に相当するチャンバ
であり、プラズマ発生室Ｂと処理室Ｃの減圧に対する気
密を保持するために、プラズマ発生領域の遮蔽から外さ
れているプラズマ遮蔽板３、アクチエータ９ｂなどを包
囲する遮蔽板控室りが、プラズマ発生室Ｂと処理室Ｃに
その境界部で連通させて付加されている。Further, Ia is a chamber corresponding to the chamber 1 of the conventional example, and in order to maintain airtightness against reduced pressure in the plasma generation chamber B and the processing chamber C, a plasma shielding plate 3 is removed from shielding the plasma generation region. A shielding plate anteroom surrounding the actuator 9b and the like is added to communicate with the plasma generation chamber B and the processing chamber C at the boundary thereof.
加工処理に関与する、マイクロ波導入室Ａ、プラズマ発
生室Ｂ、処理室Ｃ１石英窓２、プラズマ遮蔽板３、貫通
孔４、加熱ステージ５、ガス導入口６、排気ロア、導波
管８は、従来例と同様である。The microwave introduction chamber A, plasma generation chamber B, processing chamber C1, quartz window 2, plasma shielding plate 3, through hole 4, heating stage 5, gas introduction port 6, exhaust lower, and waveguide 8 are involved in processing. , which is the same as the conventional example.
ウェーハＳの加工処理は、従来例と同様にして行われ、
その１例は、先に説明した０２ダウンフローアツシング
である。Processing of the wafer S is performed in the same manner as in the conventional example,
One example is the 02 downflow Ashing described above.
そして、そのアッシングを複数のウェーハＳに対して連
続的に行う場合には、１回の処理ごとに、即ち５分間の
処理を終えてウェーハＳを交換する際に、プラズマ遮蔽
板３の上述した交換を行う。When the ashing is performed continuously on a plurality of wafers S, the plasma shielding plate 3 is Make an exchange.
そうすれば、従来例を用いた場合に３回の処理でプラズ
マ遮蔽板３が熱変形を起こしたのに対して、この実施例
では、所望の回数の処理を連続的に行うことができる。By doing so, in contrast to the case where the plasma shielding plate 3 was thermally deformed after three treatments when using the conventional example, in this embodiment, the desired number of treatments can be performed continuously.
本発明者の確認によれば、２４時間で２４０回の処理を
連続的に行い、その間にプラズマ遮蔽板３が熱変形を起
こすことがなかった。そしてこの連続処理の生産性は、
従来例の場合の２倍以上である。According to the inventor's confirmation, the plasma shielding plate 3 did not undergo thermal deformation during 240 consecutive treatments over 24 hours. The productivity of this continuous processing is
This is more than twice that of the conventional example.
なお、複数にするプラズマ遮蔽板３の個数は、実施例の
４に限定されるものではない。また、プラズマ遮蔽板３
を交換する方策は、実施例と異なったものであっても良
い。Note that the number of plasma shielding plates 3 is not limited to four in the embodiment. In addition, the plasma shielding plate 3
The strategy for exchanging may be different from the embodiment.
以上説明したように本発明の構成によれば、マイクロ波
を導入してプラズマを発生させ、複数の貫通孔を分散配
置した導電体のプラズマ遮蔽板で前記プラズマの発生領
域を隔離し、該プラズマ発生領域で生成して該貫通孔を
通過した中性活性種で被加工物の加工処理を行うマイク
ロ波プラズマ処理装置において、加工処理を連続的に行
ってもプラズマ遮蔽板が熱変形を起こさないようにする
ことができて、加工処理の大幅な生産性向上を可能にさ
せる効果がある。As explained above, according to the configuration of the present invention, plasma is generated by introducing microwaves, the plasma generating area is isolated by a conductive plasma shielding plate having a plurality of through holes distributed, and the plasma is generated. In a microwave plasma processing device that processes a workpiece with neutral active species generated in the generation area and passed through the through hole, the plasma shielding plate does not undergo thermal deformation even when processing is performed continuously. This has the effect of making it possible to significantly improve the productivity of processing.
第１図（ａ）ら）は実施例の側断面図と部分平面図、第
２図は従来例の側断面図、
第３図は従来例の問題点説明図、
である。
２は石英窓、
３はプラズマ遮蔽板、
４は貫通孔、
５は加熱ステージ、
６はガス導入口、
７は排気口、
８は導波管、
９ａは支持アーム、
９ｂは回転アクチエータ
Ａはマイクロ波導入室、
Ｂはプラズマ発生室、
Ｃは処理室、
Ｄは遮蔽板控室、
Ｍはマイクロ波、
Ｓはウェーハ（被加工物）、
である。
図において、
１．１ａはチャンバ、
１α チマンバ ２ 石英忠３ プラズマＪ
！ｆ抜 ４°貫１ＪＴｌ几５ 力ｌヘステーソ
６ カス導入０八 マイクロ麦導入室 Ｂ
プラズマ光土室Ｏ処Ｖ！Ｌ宣 Ｄ Ｚ跡
浚室Ｈマイクロメ Ｓ ウェーハ（伏姐二Ｗ
）犬＃Ｊのｆｕｌｌ断面と部分平面図
力り熱スデ
カス導入口
Ｃ処理室
Ｓ ウェーハ（杉助Ｏ工仲〕
マイクロ潰
夜来例の（１１１１断面図
部 ２ 図FIG. 1(a) and others) are a side sectional view and a partial plan view of the embodiment, FIG. 2 is a side sectional view of the conventional example, and FIG. 3 is a diagram illustrating problems in the conventional example. 2 is a quartz window, 3 is a plasma shielding plate, 4 is a through hole, 5 is a heating stage, 6 is a gas inlet, 7 is an exhaust port, 8 is a waveguide, 9a is a support arm, 9b is a rotating actuator A is a micro A wave introduction chamber, B a plasma generation chamber, C a processing chamber, D a shielding plate waiting chamber, M a microwave, and S a wafer (workpiece). In the figure, 1.1a is a chamber, 1α Chimanba 2 Quartz Chu 3 Plasma J
! f removal 4° kan 1 JTl 几 5 force l hesuteso
6 Waste introduction 08 Micro wheat introduction room B
Plasma light earth room O place V! L Sent D Z Ruins Drilling Room H Micrometer S Wafer
)Full cross section and partial plan view of dog #J Force heating Sudekas inlet C processing chamber S Wafer (Sugisuke O Kochu) Micro crushing case (1111 cross section section 2)
Claims (1)
通孔を分散配置した導電体のプラズマ遮蔽板で前記プラ
ズマの発生領域を隔離し、該プラズマ発生領域で生成し
て該貫通孔を通過した中性活性種で被加工物の加工処理
を行う装置であって、複数の前記プラズマ遮蔽板を具え
て、前記プラズマ発生領域を隔離するプラズマ遮蔽板を
随時に交換する構成をなすことを特徴とするマイクロ波
プラズマ処理装置。Plasma is generated by introducing microwaves, the plasma generation area is isolated with a conductive plasma shielding plate having a plurality of through holes distributed therein, and the plasma generated in the plasma generation area and passed through the through holes is This apparatus processes a workpiece using sexually active species, and is characterized by comprising a plurality of the plasma shielding plates, and having a configuration in which the plasma shielding plates that isolate the plasma generation area are replaced at any time. Microwave plasma processing equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP270990A JPH03208338A (en) | 1990-01-10 | 1990-01-10 | Microwave plasma treatment device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP270990A JPH03208338A (en) | 1990-01-10 | 1990-01-10 | Microwave plasma treatment device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03208338A true JPH03208338A (en) | 1991-09-11 |
Family
ID=11536827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP270990A Pending JPH03208338A (en) | 1990-01-10 | 1990-01-10 | Microwave plasma treatment device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03208338A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7223448B2 (en) | 2001-03-30 | 2007-05-29 | Intel Corporation | Methods for providing uniformity in plasma-assisted material processes |
-
1990
- 1990-01-10 JP JP270990A patent/JPH03208338A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7223448B2 (en) | 2001-03-30 | 2007-05-29 | Intel Corporation | Methods for providing uniformity in plasma-assisted material processes |
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