JPH03207866A - Plural-electrode type plasma generator - Google Patents
Plural-electrode type plasma generatorInfo
- Publication number
- JPH03207866A JPH03207866A JP71090A JP71090A JPH03207866A JP H03207866 A JPH03207866 A JP H03207866A JP 71090 A JP71090 A JP 71090A JP 71090 A JP71090 A JP 71090A JP H03207866 A JPH03207866 A JP H03207866A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- plasma
- electrode
- phase
- frequency voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005684 electric field Effects 0.000 abstract description 5
- 239000000758 substrate Substances 0.000 description 17
- 238000010586 diagram Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ス｝ ＴＪップ状被処理基板上にプラズマＣ
ＶＤ、エッチング等によって表面処理を行うプラズマ発
生装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides plasma C on a TJ-shaped substrate to be processed.
The present invention relates to a plasma generation device that performs surface treatment by VD, etching, etc.
プラズマＣＶＤ，エッチング等の技術は、電子材料、半
導体製造の分野に於で発展、利用されてきた。例えば、
半導体基板を製造する場合、単一電極を用いたプラズマ
処理装置を利用している。Technologies such as plasma CVD and etching have been developed and utilized in the fields of electronic materials and semiconductor manufacturing. for example,
When manufacturing semiconductor substrates, a plasma processing apparatus using a single electrode is used.
第４図は、従来のプラズマＣＶＤ装置の模式図で、処理
容器１内に配置された２枚の対向電極ｆ２−３間にガス
パイプ４を介して所望のガスを導入し、高周波電源５を
用いて発生させた高周波電力を、電極２と電極３の間に
供給すると、プラズマが発生し、電極２上に配置された
被処理基板６がプラズマ処理される。（特開昭６３−２
３５４７９号公報参照）また、被処理基板がストリップ
状（長尺帯状）である場合、生産性を上げるために連続
的に高速処理することが必要となり、ストリップ進行方
向に複数個並べて処理時間、処理長を確保する必要がで
てくる。第５図は、ス｝ ＩＪップ状基板連続処理装置
の概念図である。（特開昭６３−３０７２６８号公報参
照）
第５図に於て、処理容器１内に配置された複数組の対向
電極２ａ．２ｂ．２ｃ− １３ａ，３ｂ，３Ｃ・・・
間に、電極間隙部に設けられたガスパイプ４を介して所
望のガスを供給し、それぞれの電極に独立に接続された
高周波電１５ａ，５ｂ，５ｃ・・・を用いて発生させた
高周波電力を、電極２ａ・２ｂ．２ｃ・・・と３ａ，３
ｂ，３ｃ・・・の間に供給すると、プラズマが発生し電
極２ａ．２ｂ，２ｃ・・・と３ａ，３ｂ．３ｃ・・・の
間に配置されたストリップ状被処理基板７がプラズマ処
理される。なお、他に、フィルム巻きとり式のプラズマ
処理装置等がある。FIG. 4 is a schematic diagram of a conventional plasma CVD apparatus, in which a desired gas is introduced via a gas pipe 4 between two opposing electrodes f2-3 arranged in a processing chamber 1, and a high frequency power source 5 is used. When the generated high-frequency power is supplied between the electrodes 2 and 3, plasma is generated, and the substrate 6 to be processed placed on the electrode 2 is subjected to plasma processing. (Unexamined Japanese Patent Publication No. 63-2
(Refer to Publication No. 35479) Furthermore, when the substrate to be processed is in the form of a strip (long strip), continuous high-speed processing is required to increase productivity, and the processing time and processing time are reduced by lining up multiple substrates in the direction of strip progress. It will be necessary to secure the length. FIG. 5 is a conceptual diagram of a continuous processing apparatus for IJ-shaped substrates. (Refer to Japanese Unexamined Patent Publication No. 63-307268) In FIG. 2b. 2c- 13a, 3b, 3C...
In between, a desired gas is supplied through the gas pipe 4 provided in the electrode gap, and high frequency power is generated using high frequency electric wires 15a, 5b, 5c... independently connected to each electrode. , electrodes 2a and 2b. 2c... and 3a, 3
b, 3c..., plasma is generated and the electrodes 2a.b, 3c... are supplied. 2b, 2c... and 3a, 3b. 3c... The strip-shaped substrate 7 to be processed is placed between them and is subjected to plasma processing. In addition, there are other types of plasma processing equipment such as a film winding type.
ストリップ状の基板を連続的に、高速処理する場合、電
極をストリップ板進行方向に複数個配置し、処理長、処
理時間を確保する必要がある。その際に、第５図に於け
る電極２ａと電極２ｂ、電極２ｂと電極２Ｃの間隙部で
は、電極２ａ・２ｂ・２Ｃ・・・上空間よりもプラズマ
密度が低くなるために、処理効果が低く、間隙部が無駄
スペースになってしまうという問題がある。課題として
、間隙部分のプラズマ密度を上げ、無駄スペースをなく
し、処理効率を上げることが考えられる。When strip-shaped substrates are processed continuously at high speed, it is necessary to arrange a plurality of electrodes in the direction in which the strip plate advances to ensure a sufficient processing length and processing time. At that time, in the gaps between electrodes 2a and 2b, and between electrodes 2b and 2C in FIG. 5, the plasma density is lower than in the spaces above electrodes 2a, 2b, 2C, etc., so that the processing effect is reduced. There is a problem that the gap is a waste of space. The challenge is to increase the plasma density in the gap, eliminate wasted space, and increase processing efficiency.
この課題を解決する方法の一つとして、電極の大型化が
考えられる。しかし、被処理基板の幅が広い場合（例え
ば１ｍ以上〉、電極加工上、メンチ上、そして電源容量
上の点から制約を受ける。One possible way to solve this problem is to increase the size of the electrode. However, when the width of the substrate to be processed is wide (for example, 1 m or more), there are restrictions in terms of electrode processing, width, and power supply capacity.
本発明は、上記の課題を解決することにより、電極間隙
部のプラズマ密度を増大させ、処理時間、処理長を確保
し、処理効率を向上させることを目的とするものである
。The present invention aims to increase the plasma density in the electrode gap, secure processing time and processing length, and improve processing efficiency by solving the above-mentioned problems.
上述の課題は複数のプラズマ発生用電極に高周波電圧を
印加して減圧雰囲気中でプラズマを発生させるプラズマ
発生装置に於て、各々のプラズマ発生用電極に印加する
高周波電圧の位相を制御する位相制御器を備えたことを
特徴とする複数電極式プラズマ発生装置により達或され
る。The problem described above is the phase control that controls the phase of the high frequency voltage applied to each plasma generation electrode in a plasma generation device that generates plasma in a reduced pressure atmosphere by applying high frequency voltage to multiple plasma generation electrodes. This is achieved by a multi-electrode type plasma generator characterized by being equipped with a plasma generator.
本発明の装置は、上述のような構或であるので、隣接す
るプラズマ発生用電極間に、例えば電極間の高周波電圧
の位相差が１８０゜となるように位相のずれた高周波電
圧を印加した場合、これらの隣接する電極間隙部に於け
る、電極面に対して水平方向の電界強度が最大となる。Since the apparatus of the present invention has the above-described structure, high-frequency voltages with a phase difference such that the phase difference of the high-frequency voltages between the electrodes is, for example, 180 degrees are applied between adjacent plasma generation electrodes. In this case, the electric field strength in the horizontal direction with respect to the electrode surface in the gap between these adjacent electrodes becomes maximum.
電極間で発生するプラズマは、電子と中性粒子の衝突に
よって起こる電離現象によって発生、維持される。電子
は電界によって加速されるので、電界強度が高くなると
電離が促進され、プラズマ密度が増大する。The plasma generated between the electrodes is generated and maintained by the ionization phenomenon caused by collisions between electrons and neutral particles. Since electrons are accelerated by the electric field, increasing the electric field strength promotes ionization and increases the plasma density.
よって、隣接するプラズマ発生用電極に印加する高周波
電圧の位相差を制御することにより、電極隙部の電界強
度を高めることができ、電極間隙部で発生するプラズマ
密度を増大させることが可能となる。Therefore, by controlling the phase difference between the high-frequency voltages applied to adjacent plasma generation electrodes, it is possible to increase the electric field strength in the electrode gap and increase the plasma density generated in the electrode gap. .
以下、本発明の実施例を、図を用いて説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図は本発明をストリップ状基板連続処理装置に適用
した例を表わす図である。第５図と同一の構威要素につ
いては同様な参照番号を付してその説明を省略する。FIG. 1 is a diagram showing an example in which the present invention is applied to a strip-shaped substrate continuous processing apparatus. Components that are the same as those in FIG. 5 are given the same reference numerals and their explanations will be omitted.
高周波電源５ａ，５ｂ，５ｃ・・・と電極２ａ２ｂ・２
Ｃ・・・との間には′ｔ源の内部インピーダンスと負荷
インピーダンスとの整合をとり、電力を有効に利用する
ためのマッチングボックス８ａ．ｇｂ．３ｃ．・・・が
それぞれ設けられており、ここで各高周波電源５ａ，５
ｂ・５ｃ・・・の位相が検知される。位相制御器９はマ
ッチングボックス８ａ・８ｂ．８ｃ・・・で検知された
位相に基づいて高周波電源５ａ，５ｂ，５ｃ・・・の位
相を制御し、隣接する電極間の位相差が所定値、好まし
くは１８０゜になる様な制御を行う。High frequency power sources 5a, 5b, 5c... and electrodes 2a2b and 2
A matching box 8a . gb. 3c. ... are provided, and each high frequency power source 5a, 5 is provided here.
The phases of b, 5c, . . . are detected. The phase controller 9 includes matching boxes 8a, 8b. The phases of the high-frequency power sources 5a, 5b, 5c... are controlled based on the phase detected by the electrodes 8c..., so that the phase difference between adjacent electrodes becomes a predetermined value, preferably 180°. .
第２図は、大面積基板の表面改質や基板上に薄膜を形戊
するプラズマ処理実験装置を示すもので、ＳＵＳやアル
ミ等からなる処理容器１内に、配置された２組のＳＵＳ
製の水冷式プラズマ発生用電極２ａ．２ｂとアース電極
３ａ，３ｂ間にガスパイブ４を介して所望のガス（Ａｒ
で実施）を導入し、各電極に接続された高周波電源５ａ
，５ｂに於で発生する高周波電圧の位相を位相制御器９
を用いて、２電極間に印加する高周波電圧の位相差を制
御し、高周波電力を電極２ａ、２ｂと電極３ａ．３ｂ間
に供給するとプラズマが発生し、電極間に配置し接地さ
れた被処理基板６をプラズマ処理する。Figure 2 shows a plasma processing experimental apparatus for surface modification of large-area substrates and formation of thin films on substrates. Two sets of SUS
water-cooled plasma generation electrode 2a. A desired gas (Ar
) and a high frequency power source 5a connected to each electrode.
, 5b, a phase controller 9 controls the phase of the high frequency voltage generated at
is used to control the phase difference of the high frequency voltage applied between the two electrodes, and the high frequency power is applied to the electrodes 2a, 2b and the electrodes 3a . When supplied between the electrodes 3b, plasma is generated, and the substrate 6 to be processed, which is placed between the electrodes and grounded, is subjected to plasma processing.
本実施例では、プラズマ発生用電極２ａ．２ｂ上の中間
点１０におけるイオン密度（＝プラズマ密度）をシング
ルプローブ法により計測した。第３図は電極２ａ．２ｂ
に印加する高周波電圧の位相差を０度から１８０度まで
変化させたときの計測点１０に於ける計測結果である。In this embodiment, plasma generation electrode 2a. The ion density (=plasma density) at the intermediate point 10 on 2b was measured by the single probe method. FIG. 3 shows the electrode 2a. 2b
These are the measurement results at measurement point 10 when the phase difference of the high-frequency voltage applied to the circuit was changed from 0 degrees to 180 degrees.
第３図より、位相差を０度から１８０度にずらすにつれ
て、プラズマ密度が増大することがわかる。位相差が１
８０度の方が、０度の場合よりも約３倍のプラズマ密度
が得られた。プラズマ密度が増大することによって、処
理効率も向上する。From FIG. 3, it can be seen that as the phase difference is shifted from 0 degrees to 180 degrees, the plasma density increases. Phase difference is 1
At 80 degrees, a plasma density approximately three times higher than at 0 degrees was obtained. By increasing the plasma density, processing efficiency also improves.
本発明の複数電極式プラズマ発生装置では、隣接する電
極間隙部分のプラズマ密度を高くして効率的な処理を行
うことができ、高速処理が可能となる。また、ス｝ Ｉ
Ｊップ状基板のプラズマ処理装置のライン長の縮小化、
省スペース化に有効である。In the multi-electrode plasma generator of the present invention, efficient processing can be performed by increasing the plasma density in the gap between adjacent electrodes, and high-speed processing is possible. Also, I
Reducing the line length of J-shaped substrate plasma processing equipment,
Effective for space saving.
第１図は、本発明による複数電極式プラズマ発生装置の
構戊図、
第２図は、本発明によるプラズマ処理実験装置の構戒図
、
第３図は、位相差とイオン密度（＝プラズマ密度）の関
係（実施結果）を示すグラフ、第４図は、従来のプラズ
マＣＶＤ装置の模式図、第５図は、ス｝ＩＪップ状基板
連続処理装置の概念図である。
１・・・処理容器、
２ａ，ｂ．ｃ，ｄ・・・プラズマ発生用電極、３ａ．ｂ
，ｃ，ｄ・−アース電極、
４・・・ガスパイプ、
５ａ，ｂ， ｃ＋ ｄ・・・高周波電源、６・・・被処
理基板、
７・・・ストリップ状被処理基板、
８ａ・ｂ・Ｃ・ｄ・・・マッチングボックス、９・・・
位相制御器、
１０・・・計測点。Fig. 1 is a schematic diagram of a multi-electrode plasma generator according to the present invention, Fig. 2 is a schematic diagram of a plasma processing experimental apparatus according to the present invention, and Fig. 3 is a diagram showing the phase difference and ion density (= plasma density). ), FIG. 4 is a schematic diagram of a conventional plasma CVD apparatus, and FIG. 5 is a conceptual diagram of an IJ-type substrate continuous processing apparatus. 1... Processing container, 2a, b. c, d... electrodes for plasma generation, 3a. b
, c, d - earth electrode, 4... gas pipe, 5a, b, c+ d... high frequency power supply, 6... substrate to be processed, 7... strip-shaped substrate to be processed, 8a, b, C・d...Matching box, 9...
Phase controller, 10... measurement point.
Claims (1)
て減圧雰囲気中でプラズマを発生させるプラズマ発生装
置に於て、各々のプラズマ発生用電極に印加する高周波
電圧の位相を制御する位相制御器を備えたことを特徴と
する複数電極式プラズマ発生装置。1. A plasma generation device that generates plasma in a reduced pressure atmosphere by applying a high frequency voltage to a plurality of plasma generation electrodes is equipped with a phase controller that controls the phase of the high frequency voltage applied to each plasma generation electrode. A multi-electrode plasma generator characterized by the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP71090A JPH03207866A (en) | 1990-01-08 | 1990-01-08 | Plural-electrode type plasma generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP71090A JPH03207866A (en) | 1990-01-08 | 1990-01-08 | Plural-electrode type plasma generator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03207866A true JPH03207866A (en) | 1991-09-11 |
Family
ID=11481323
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP71090A Pending JPH03207866A (en) | 1990-01-08 | 1990-01-08 | Plural-electrode type plasma generator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03207866A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002261031A (en) * | 2001-03-06 | 2002-09-13 | Kanegafuchi Chem Ind Co Ltd | Film formation method of semiconductor layer and manufacturing method of photoelectric conversion apparatus |
| GB2489761A (en) * | 2011-09-07 | 2012-10-10 | Europlasma Nv | Surface coatings formed by plasma polymerisation |
-
1990
- 1990-01-08 JP JP71090A patent/JPH03207866A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002261031A (en) * | 2001-03-06 | 2002-09-13 | Kanegafuchi Chem Ind Co Ltd | Film formation method of semiconductor layer and manufacturing method of photoelectric conversion apparatus |
| JP4659238B2 (en) * | 2001-03-06 | 2011-03-30 | 株式会社カネカ | Method for forming semiconductor layer |
| GB2489761A (en) * | 2011-09-07 | 2012-10-10 | Europlasma Nv | Surface coatings formed by plasma polymerisation |
| GB2489761B (en) * | 2011-09-07 | 2015-03-04 | Europlasma Nv | Surface coatings |
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