JPH03199937A - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPH03199937A JPH03199937A JP33808889A JP33808889A JPH03199937A JP H03199937 A JPH03199937 A JP H03199937A JP 33808889 A JP33808889 A JP 33808889A JP 33808889 A JP33808889 A JP 33808889A JP H03199937 A JPH03199937 A JP H03199937A
- Authority
- JP
- Japan
- Prior art keywords
- glass
- stem
- adhesion
- opening part
- pedestal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 239000011521 glass Substances 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 16
- 239000000853 adhesive Substances 0.000 abstract description 8
- 230000001070 adhesive effect Effects 0.000 abstract description 7
- 238000007747 plating Methods 0.000 abstract description 7
- 229920002379 silicone rubber Polymers 0.000 abstract description 6
- 239000007788 liquid Substances 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000000465 moulding Methods 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000004945 silicone rubber Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910000833 kovar Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は自動車のエンジンコントロール等に用いられる
半導体圧力センサに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor pressure sensor used for engine control of automobiles and the like.
耐衝撃性、耐振性などが要求される自動車用の半導体圧
力センサは、パッケージ形にして絶対圧測定形のものが
多いが、その従来例を第２図に示す。Semiconductor pressure sensors for automobiles that require shock resistance, vibration resistance, etc. are often packaged and absolute pressure measuring types, and a conventional example is shown in FIG.
即ち、１は金属製のステム（例えばコバール金属）にし
て、該ステム１は、複数のリードピン２と共にハーメチ
ック封止のガラス３が充填されており、ステム１の表面
には通常のＩＣ（集積回路）用などのステムと同様に金
メツキが施されている。That is, 1 is a metal stem (for example, Kovar metal), the stem 1 is filled with a hermetically sealed glass 3 together with a plurality of lead pins 2, and a normal IC (integrated circuit) is mounted on the surface of the stem 1. ) The stem is plated with gold, just like the stems of other models.
４はステム１の金メツキ層の上にシリコンゴムの接着剤
によって接着されたガラスによりなる台座にして、該台
座４上にピエゾ抵抗を表面に形成したシリコン単結晶か
らなる半導体ダイヤフラム５が真空の基準圧力室５ａを
介在して固着されている。Reference numeral 4 denotes a pedestal made of glass that is adhered to the gold plating layer of the stem 1 with a silicone rubber adhesive, and a semiconductor diaphragm 5 made of a silicon single crystal with a piezoresistor formed on its surface is placed on the pedestal 4 in a vacuum state. They are fixed with a reference pressure chamber 5a interposed therebetween.
６は前記ピエゾ抵抗及び該抵抗のホイトストンブリッジ
回路の保護樹脂層、７はピエゾ抵抗のブリッジ電極とリ
ードピン２とを接続した導電性ワイヤー ８はステム１
に固着されたキャップにして圧力導入管部８ａを有する
。6 is a protective resin layer of the piezoresistor and the Wheatstone bridge circuit of the resistor; 7 is a conductive wire connecting the bridge electrode of the piezoresistor and the lead pin 2; 8 is the stem 1
It has a pressure introducing pipe part 8a as a cap fixed to the pipe.
前記のように、ステム１と台座４との接着剤にシリコン
ゴムを使用したのは、金属（コバール）とガラスとの熱
膨脹係数の違いにより生ずる応力吸収のためであるが、
一方において金メツキ層がシリコンゴムの接着硬化を阻
止して歪が生じ、接着強度が低下し、落下等の衝撃或い
は振動等によってステム１からの台座４の剥離現象、そ
してリードピン２からの導電性ワイヤー７の離脱、断線
現象等が生じ、信頼性に欠けるという問題があった。As mentioned above, silicone rubber was used as the adhesive between the stem 1 and the pedestal 4 in order to absorb stress caused by the difference in coefficient of thermal expansion between metal (Kovar) and glass.
On the other hand, the gold plating layer prevents the adhesion of the silicone rubber from curing, causing distortion and reducing the adhesion strength, causing peeling of the pedestal 4 from the stem 1 due to impact such as dropping, vibration, etc., and conductivity from the lead pin 2. There was a problem in that the wire 7 came off, the wire broke, etc., and reliability was lacking.
本発明は、かかる問題点に鑑みなされたもので、ステム
と台座との接着強度を高め、信頼性のある半導体圧力セ
ンサの提供を目的とする。The present invention was made in view of the above problems, and an object of the present invention is to provide a reliable semiconductor pressure sensor that increases the adhesive strength between the stem and the pedestal.
本発明は前記目的を達成するために、複数のリードピン
と共にガラスフ１−メチツク封止した金属製のステムに
、半導体ダイヤフラムを真空基準圧力室を介して封止し
たガラスよりなる台座を接着する半導体圧力センサにお
いて、前記ステムに前記台座裏面と対向する開口部を穿
設し、該開口部に露出した前記ハーメチックガラスに台
座を接着したものである。In order to achieve the above-mentioned object, the present invention has a semiconductor diaphragm bonded to a glass pedestal in which a semiconductor diaphragm is sealed via a vacuum reference pressure chamber to a metal stem which is sealed together with a plurality of lead pins via a vacuum reference pressure chamber. In the sensor, an opening facing the back surface of the pedestal is formed in the stem, and the pedestal is bonded to the hermetic glass exposed in the opening.
ステムの開口部に露出したガラスと台座とが、ガラス対
ガラスの接着となり、強力な接着状態となる。The glass exposed through the opening of the stem and the pedestal form a glass-to-glass bond, resulting in a strong bond.
本発明の実施例を図面を参照して説明する。 Embodiments of the present invention will be described with reference to the drawings.
なお、本発明はステムの改良にあり、その他は従来例と
同一であるので、ステム部分の構成についてのみ説明し
、他の部分の構成は従来例と同一符号を付してその説明
は省略する。The present invention is an improvement of the stem, and the other parts are the same as the conventional example, so only the structure of the stem part will be explained, and the structure of other parts will be given the same symbols as the conventional example, and the explanation thereof will be omitted. .
第１図に示すように、金属製のステム（例えばコバール
金属）１０の中央部に台座４の裏面とほぼ同一形状（円
形又は方形）の開口部１０ａを穿設し、該開口部１０ａ
にリードピン２と共にハーメチック封止したガラス３の
上面を露出させるようにしたものである。As shown in FIG. 1, an opening 10a having approximately the same shape (circular or rectangular) as the back surface of the pedestal 4 is bored in the center of a metal stem 10 (for example, Kovar metal).
The upper surface of the glass 3 hermetically sealed together with the lead pin 2 is exposed.
したがって、ステム１０と台座４とはガラス対ガラスを
シリコンゴムの接着剤をもって接着されるので、接着剤
の硬化阻害、歪の発生もなく、接着強度の高い接着が保
持される。Therefore, since the stem 10 and the pedestal 4 are bonded glass to glass using a silicone rubber adhesive, a high bonding strength is maintained without inhibiting the hardening of the adhesive or causing distortion.
また、開口部１０ａは、ステム１０の型成形及びリード
ピン３の孔明は加工と同時に孔明けするので製作コスト
は変らず、かえって金メツキの施工面積が減少し、メツ
キ時間の短縮、メツキ液の寿命増大となりコストダウン
を招来する。In addition, since the opening 10a is formed at the same time as the molding of the stem 10 and the drilling of the lead pin 3, the manufacturing cost remains unchanged, but the area to be gilded is reduced, the plating time is shortened, and the life of the plating liquid is reduced. This will lead to an increase in costs and lead to cost reductions.
なお、開口部１０ａの大きさは直径３ｍ１１程度の円形
又は−辺３鰭程度の方形であるので、ノ１−メチツク封
止のガラス３の溶融時にもその表面張力によって開口部
１０ａより流出することがなく、また簡単な押え治具に
よって開口部１０ａの露出ガラス面も実用上問題のない
平面度が得られる。Note that since the size of the opening 10a is a circle with a diameter of about 3 m11 or a rectangle with a side of about 3 fins, even when the glass 3 of the one-metal seal is melted, it will not flow out from the opening 10a due to its surface tension. Furthermore, by using a simple holding jig, the exposed glass surface of the opening 10a can have a flatness that does not cause any practical problems.
なお、本実施例ではハーメチックガラスと台座との接着
にシリコンゴムの接着剤を用いたが、これに限定される
ものではなく、ガラス対ガラスの加熱溶融接着の手段な
ども採用することができる。In this embodiment, a silicone rubber adhesive was used to bond the hermetic glass and the pedestal, but the present invention is not limited to this, and means such as glass-to-glass heat-melting bonding may also be used.
本発明は、・ステムと半導体ダイヤフラムの台座との接
着がガラス対ガラスの接着となるので、歪のない高い接
着強度を保持することができ、耐衝撃性、耐振性に優れ
た信頼性の高い半導体圧力センサを得ることができる。The present invention is characterized by: - Since the adhesion between the stem and the base of the semiconductor diaphragm is glass-to-glass adhesion, it is possible to maintain high adhesion strength without distortion, and it is highly reliable with excellent impact resistance and vibration resistance. A semiconductor pressure sensor can be obtained.
第１図は本発明の実施例の縦断面図、
第２図は従来例の縦断面図である。
２・・・リードピン、３・・・ハーメチック封止ガラス
、４・・・台座、５・・・半導体ダイヤフラム、８・・
・キャップ、８ａ・・・圧力導入部、１０・・・ステム
、１０ａ・・・開口部。FIG. 1 is a longitudinal sectional view of an embodiment of the present invention, and FIG. 2 is a longitudinal sectional view of a conventional example. 2... Lead pin, 3... Hermetic sealing glass, 4... Pedestal, 5... Semiconductor diaphragm, 8...
- Cap, 8a...pressure introduction part, 10...stem, 10a...opening.
Claims (1)
属製のステムに、半導体ダイヤフラムを真空基準圧力室
を介して封止したガラスよりなる台座を接着してなる半
導体圧力センサにおいて、前記ステムに前記台座裏面と
対向する開口部が穿設され、該開口部に露出した前記ハ
ーメチックガラスに台座が接着されていることを特徴と
する半導体圧力センサ。In a semiconductor pressure sensor, a pedestal made of glass, in which a semiconductor diaphragm is sealed via a vacuum reference pressure chamber, is bonded to a metal stem hermetically sealed with glass along with a plurality of lead pins, the stem being opposite to the back surface of the pedestal. 1. A semiconductor pressure sensor characterized in that an opening is formed therein, and a pedestal is bonded to the hermetic glass exposed in the opening.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33808889A JPH03199937A (en) | 1989-12-28 | 1989-12-28 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33808889A JPH03199937A (en) | 1989-12-28 | 1989-12-28 | Semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03199937A true JPH03199937A (en) | 1991-08-30 |
Family
ID=18314792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33808889A Pending JPH03199937A (en) | 1989-12-28 | 1989-12-28 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03199937A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003042883A (en) * | 2001-07-30 | 2003-02-13 | Saginomiya Seisakusho Inc | Liquid-sealed-type pressure sensor |
-
1989
- 1989-12-28 JP JP33808889A patent/JPH03199937A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003042883A (en) * | 2001-07-30 | 2003-02-13 | Saginomiya Seisakusho Inc | Liquid-sealed-type pressure sensor |
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