JPH0319154A - Stamper - Google Patents

Stamper

Info

Publication number
JPH0319154A
JPH0319154A JP15397689A JP15397689A JPH0319154A JP H0319154 A JPH0319154 A JP H0319154A JP 15397689 A JP15397689 A JP 15397689A JP 15397689 A JP15397689 A JP 15397689A JP H0319154 A JPH0319154 A JP H0319154A
Authority
JP
Japan
Prior art keywords
stamper
sol
gel
diamond
work
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15397689A
Other languages
Japanese (ja)
Other versions
JP2800274B2 (en
Inventor
Fumitake Watanabe
文武 渡辺
Mikiko Saito
美紀子 齋藤
Masahiro Yanagisawa
雅広 柳沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP1153976A priority Critical patent/JP2800274B2/en
Publication of JPH0319154A publication Critical patent/JPH0319154A/en
Application granted granted Critical
Publication of JP2800274B2 publication Critical patent/JP2800274B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C45/00Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
    • B29C45/17Component parts, details or accessories; Auxiliary operations
    • B29C45/26Moulds
    • B29C45/263Moulds with mould wall parts provided with fine grooves or impressions, e.g. for record discs
    • B29C45/2632Stampers; Mountings thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29KINDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
    • B29K2907/00Use of elements other than metals as mould material
    • B29K2907/04Carbon

Abstract

PURPOSE:To manufacture a stamper in a short process and to obtain the stamper which is advantageous in yield and cost by forming a diamond-like carbon layer on a Ni sheet having a minute pattern. CONSTITUTION:The diamond-like carbon film 2 is formed on the Ni stamper (master) 1 generated by a normal method by a DC glow discharge CVD method using CH4/H2 mix gas so as to generate a sol-gel work stamper. Since the surface processing of the Ni stamper 1 is executed by the diamond-like carbon film 2 having releasing property and abrasion resistance for a sol-gel material in such the case, it can repeatedly be used for multiple times as the sol-gel work stamper. Thus, manufacture of the stamper is advantageous in yield and cost without carrying out the complicated process.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は光ディスク用スタンパに関し、特にゾルゲル法
を用いた光ディスク用ガラス基板作製のためのワークス
タンバに関するものである。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a stamper for optical discs, and particularly to a work stamper for producing a glass substrate for optical discs using a sol-gel method.

(従来の技術) ゾルゲル法を用いた光ディスク用ガラス基板の作製プロ
セスについて説明スる。
(Prior Art) A process for manufacturing a glass substrate for an optical disk using a sol-gel method will be explained.

まず、所望のデータに基づきガラス原盤にマスクライテ
ィングを行う。次に、ガラス原盤にNiのスパッタおよ
び電鋳処理を施すことにより、Niスタンパ(マスク)
をおこす。ついで、Niスタンバ(マスク)を型にして
再度電鋳処理を行い、Niスタンパ(マザー)を作製す
る。この様にして作製したNiスタンバ(マザー)を用
いて、射出成形あるいは2P戒形により樹脂膜のゾルゲ
ル用ワークスタンパを得ることが出来る。
First, mask writing is performed on the glass master based on desired data. Next, by subjecting the glass master to Ni sputtering and electroforming, a Ni stamper (mask) is formed.
cause Next, electroforming is performed again using the Ni stamper (mask) as a mold to produce a Ni stamper (mother). Using the Ni stamper (mother) produced in this manner, a resin film sol-gel work stamper can be obtained by injection molding or 2P molding.

次に、ガラス基板上にスピンコート法により金属アルコ
レート、ポリエチレングリコール、塩酸を含むアルコー
ル溶液(ゾルゲル溶液)を塗布し、ゾルゲル層を形成す
る。先ほどのワークスタンパををこのゾルゲル面に押し
当て、微細なパターンを転写する。重ね合わせたまま一
次焼戒を行った後、ワークスタンパから離型した微細パ
ターン付きガラス基板を更に二次焼戒する。このような
プロセスを経て、光ディスク用ガラス基板を得ることが
出来る。
Next, an alcohol solution (sol-gel solution) containing metal alcoholate, polyethylene glycol, and hydrochloric acid is applied onto the glass substrate by a spin coating method to form a sol-gel layer. Press the work stamper from earlier onto this sol-gel surface to transfer the fine pattern. After primary firing is performed while the substrates are overlapped, the finely patterned glass substrate released from the work stamper is further subjected to secondary firing. Through such a process, a glass substrate for an optical disc can be obtained.

(発明が解決しようとする課題) 先述したように、ゾルゲル用ワークスタンパを作製する
には、現状ではかなりのプロセスを必要とする。これは
ゾルゲル用ワークスタンパとして、直接Niスタンパ(
マスタ)が使用できないことによる。即ち、ゾルゲル層
とNiスタンパをそのまま密着させて一次焼或を行うと
、離型の際、ゾルゲル層の一部Niスタンパ面に付着し
、正確なパターン転写が出来ない。
(Problems to be Solved by the Invention) As mentioned above, manufacturing a sol-gel work stamper currently requires a considerable number of processes. This is a direct Ni stamper (
master) is unavailable. That is, if primary baking is performed with the sol-gel layer and the Ni stamper in close contact with each other, a portion of the sol-gel layer will adhere to the surface of the Ni stamper when the mold is released, making it impossible to accurately transfer the pattern.

このため上述したような長いプロセスを採り入れている
が、特に微細なパターンを比較的大面積に渡って何度も
転写するので、歩留り、コストの面で問題となる。
For this reason, a long process as described above is employed, but this poses problems in terms of yield and cost, as particularly fine patterns are transferred over a relatively large area many times.

本発明は、上述した問題を解決するゾルゲル用ワークス
タンパを提供することにある。
An object of the present invention is to provide a sol-gel work stamper that solves the above-mentioned problems.

(課題を解決するための手段) 本発明によるスタンパは、微細なパターンを有するNi
薄板の上に、ダイヤモンド状カーボン層を形成したこと
を特徴とする。また、Ni薄板とダイヤモンド状カーボ
ン層の間に付着強化層を形成したことを特徴とする。
(Means for Solving the Problems) A stamper according to the present invention has a Ni stamper having a fine pattern.
It is characterized by a diamond-like carbon layer formed on a thin plate. Further, it is characterized in that an adhesion reinforcing layer is formed between the Ni thin plate and the diamond-like carbon layer.

(作用) 本発明によれば、ゾルゲル材料に対して離型性かつ耐磨
耗性のあるダイヤモンド状のカーボン膜でNiスタンパ
の表面処理を行うため、そのままゾルゲル用ワークスタ
ンパとして多数回繰り返して使用できる。このため、従
来のような煩雑なプロセスを経ることがなく、コスト歩
留りなどの面で有利である。
(Function) According to the present invention, the surface of the Ni stamper is treated with a diamond-like carbon film that has releasability and abrasion resistance for the sol-gel material, so it can be used as it is as a work stamper for sol-gel many times. can. Therefore, there is no need for complicated processes as in the conventional method, which is advantageous in terms of cost yield and the like.

また、Niスタンバとカーボン膜との間に付着強化層を
導入することにより、より安定したゾルゲル転写を行う
ことが出来る。この付着強化層には各種の材料を用いる
ことができるが、SiまたはSiの酸化物、窒化物、炭
化物、GeまたはGeの酸化物、窒化物、もしくはCr
, Ti, Zr, Co, Cu, Ag, Al,
 Sn, Pbなとの金属を単独あるいは組み合せて使
用できる。
Further, by introducing an adhesion reinforcing layer between the Ni standber and the carbon film, more stable sol-gel transfer can be performed. Various materials can be used for this adhesion enhancing layer, including Si or Si oxides, nitrides, carbides, Ge or Ge oxides, nitrides, or Cr.
, Ti, Zr, Co, Cu, Ag, Al,
Metals such as Sn and Pb can be used alone or in combination.

(実施例) 以下、実施例に基づき詳細に説明する。第1図および第
2図は、本発明のスタンバの概略断面図である。本発明
のスタンパは、前記した通常の方法で作製されたNiス
タンパ(マスク)1上にダイヤモンド状カーボン膜2を
形成してなる。また第2図に示すように、Niスタンバ
(マスク)1とダイヤモンド状カーボン膜2の間に付着
強化層を導入することにより安定したゾルゲル転写を行
うことができる。
(Example) Hereinafter, a detailed explanation will be given based on an example. 1 and 2 are schematic cross-sectional views of the stand bar of the present invention. The stamper of the present invention is formed by forming a diamond-like carbon film 2 on a Ni stamper (mask) 1 manufactured by the above-described conventional method. Further, as shown in FIG. 2, by introducing an adhesion reinforcing layer between the Ni standby (mask) 1 and the diamond-like carbon film 2, stable sol-gel transfer can be performed.

実施例1 通常の方法で作製されたNiスタンバ(マスク)1に、
CH4/H2混合ガスを用いたDCグロー放電CVD法
により、ダイヤモンド状カーボン膜2を500人威膜し
た。このようにして本発明によるゾルゲル用ワークスタ
ンバが作製できる。
Example 1 In a Ni standby (mask) 1 prepared by a normal method,
A diamond-like carbon film 2 was deposited on 500 people using a DC glow discharge CVD method using a CH4/H2 mixed gas. In this way, the sol-gel work stand according to the present invention can be produced.

次に、ゾルゲル法を用いたガラス基板の作製方法につい
て述べる。
Next, a method for manufacturing a glass substrate using the sol-gel method will be described.

ガラス基板上にテトラエトキシシラン、ポリエチレング
リコール、塩酸を含むエチルアルコール溶液をスビンコ
ート法により塗布し、ゾルゲル層を2000〜3000
人形成した。ついで、先ほどのワークスタンバを減圧下
重ね合わせて押圧する。そのままの状態で、100°C
、10分間の一次焼戒を行った。
An ethyl alcohol solution containing tetraethoxysilane, polyethylene glycol, and hydrochloric acid is applied onto a glass substrate by the Subin coating method to form a sol-gel layer with a coating density of 2000 to 3000.
Formed a person. Next, the work stand bars from earlier are stacked and pressed together under reduced pressure. 100°C in the same state
, performed the first burning precept for 10 minutes.

その後、ガラス基板をワークスタンパより離型し、35
0°C、10分間の二次焼威を行い、所望の微細パター
ンを有するガラス基板を得た。
After that, the glass substrate was released from the work stamper, and
Secondary baking was performed at 0°C for 10 minutes to obtain a glass substrate having a desired fine pattern.

本発明によるダイヤモンド状カーボン膜で被覆されたN
iスタンパでは、100回以上ゾルゲル転写を行っても
、スタンパ面に傷が付くこともなく、また、ゾルゲル材
料の付着も認められなかった。そのため、良好な転写が
繰り返しで′きた。
N coated with diamond-like carbon film according to the present invention
With the i-stamper, even when sol-gel transfer was performed more than 100 times, the stamper surface was not scratched, and no adhesion of sol-gel material was observed. Therefore, good transfer was repeatedly possible.

一方、通常の方法で作製されたNiスタンバをそのまま
用いた場合は、10回程度の繰り返し使用で表面に傷が
付いた。また、ゾルゲル材料の付着も初期の段階から起
こり、スタンパの使用を繰り返すにつれて出来上りのゾ
ルゲル基板の欠陥が増加した。
On the other hand, when a Ni standby produced by a conventional method was used as it was, the surface was scratched after repeated use about 10 times. In addition, adhesion of the sol-gel material occurred from an early stage, and as the stamper was repeatedly used, the number of defects in the finished sol-gel substrate increased.

実施例2 通常の方法で作製されたNiスタンパ(マスク)にスパ
ッタ法によりSiを100人威膜した。ついで、このS
i層上にCH4/H2混合ガスを用いたDCグロー放電
CVD法により、ダイヤモンド状カーボン膜を50OA
戒膜した。このようにして本発明によるゾルゲル用ワー
クスタンバが作製できる。
Example 2 A Ni stamper (mask) prepared by a conventional method was coated with Si by sputtering for 100 people. Next, this S
A diamond-like carbon film of 50 OA was deposited on the i-layer by DC glow discharge CVD using a CH4/H2 mixed gas.
I was angry. In this way, the sol-gel work stand according to the present invention can be produced.

次に、ゾルゲル法を用いたガラス基板の作製方法につい
て述べる。
Next, a method for manufacturing a glass substrate using the sol-gel method will be described.

ガラス基板上にテトラエトキシシラン、ポリエチレング
リコール、塩酸を含むエチルアルコール溶液をスピンコ
ート法により塗布し、ゾルゲル層を2000〜aooo
A形成した。ついで、先ほどのワークスタンパを減圧下
で重ね合わせて押圧する。そのままの状態で、100°
C、10分間の一次焼戒を行った。その後、ガラス基板
をワークスタンパより離型し、350’C、10分間の
二次焼戒を行い、所望の微細パターンを有するガラス基
板を得た。
An ethyl alcohol solution containing tetraethoxysilane, polyethylene glycol, and hydrochloric acid is applied onto a glass substrate by spin coating to form a sol-gel layer with
A was formed. Next, the work stampers from earlier are pressed together under reduced pressure. 100° in the same state
C. Performed the first burning precept for 10 minutes. Thereafter, the glass substrate was released from the work stamper and subjected to secondary baking at 350'C for 10 minutes to obtain a glass substrate having a desired fine pattern.

本実施例によるダイヤモンド状カーボン膜で被覆された
Niスタンバでは、100回以上ゾルゲル転写を行って
も、スタンパ面に傷が付くこともなく、また、ゾルゲル
材料の付着も認められなかった。
In the Ni stamper coated with the diamond-like carbon film according to this example, even when sol-gel transfer was performed more than 100 times, the stamper surface was not scratched, and no sol-gel material was observed to adhere.

そのため、良好な転写が繰り返しできた。Therefore, good transfer could be repeated.

一方、通常の方法で作製されたNiスタンパをそのまま
用いた場合は、10回程度の繰り返し使用で表面に傷が
付いた。また、ゾルゲル材料の付着も初期の段階から起
こり、スタンバの使用を繰り返すにつれて出来上りのゾ
ルゲル基板の欠陥が増加した。
On the other hand, when a Ni stamper produced by a conventional method was used as it was, the surface was scratched after repeated use about 10 times. In addition, adhesion of the sol-gel material occurred from an early stage, and as the standber was repeatedly used, the number of defects in the finished sol-gel substrate increased.

実施例3 通常の方法で作製されたNiスタンパ(マスク)に、ス
バッタ法によりSi02を1ooA戒膜した。ついで、
このSi02層上にCH4/H2混合ガスを用いたDC
グロー放電CVD法により、ダイヤモンド状カーボン膜
を50OA戒膜した。このようにして本発明によるゾル
ゲル用ワークスタンパが作製できる。
Example 3 A 10A film of Si02 was applied to a Ni stamper (mask) prepared by a conventional method using a sputtering method. Then,
DC using CH4/H2 mixed gas on this Si02 layer
A 50 OA diamond-like carbon film was formed by a glow discharge CVD method. In this way, the sol-gel work stamper according to the present invention can be produced.

次に、ゾルゲル法を用いたガラス基板を実施例2と同様
に作製した。
Next, a glass substrate was produced in the same manner as in Example 2 using the sol-gel method.

実施例によるダイヤモンド状カーボン膜で被覆されたN
iスタンパでは、100回以上ゾルゲル転写を行っても
、スタンパ面に傷が付くこともなく、また、ゾルゲル材
料の付着も認められなかった。そのため、良好な転写が
繰り返しできた。
N coated with diamond-like carbon film according to examples
With the i-stamper, even when sol-gel transfer was performed more than 100 times, the stamper surface was not scratched, and no adhesion of sol-gel material was observed. Therefore, good transfer could be repeated.

実施例4 実施例3のSi02の代わりにSi3N4を用いて、実
施例3と同様にゾルゲル用ワークスタンパを作製した。
Example 4 A sol-gel work stamper was produced in the same manner as in Example 3, using Si3N4 instead of Si02 in Example 3.

実施例1と同様にゾルゲル転写を行ったところ、100
回以上繰り返し使用しても、転写バタンの劣化は認めら
れなかった。
When sol-gel transfer was performed in the same manner as in Example 1, 100
No deterioration of the transfer button was observed even after repeated use.

実施例5 実施例3のSi02の代わりにSiCを用いて、実施例
3と同様にゾルゲル用ワークスタンパを作製した。
Example 5 A sol-gel work stamper was produced in the same manner as in Example 3, using SiC instead of Si02 in Example 3.

実施例3と同様にゾルゲル転写を行ったところ、100
回以上繰り返し使用しても、転写バタンの劣化は認めら
れなかった。
When sol-gel transfer was performed in the same manner as in Example 3, 100
No deterioration of the transfer button was observed even after repeated use.

実施例6 通常の方法で作製されたNiスタンパ(マスク)に、ス
バッタ法によりGeをlOOA戒膜した。ついで、この
Ge層上にCH4/H2混合ガスを用いたDCグリー放
電CVD法により、ダイヤモンド状カーボン膜を500
A或膜した。このようにして本発明によるゾルゲル用ワ
ークスタンパが作製できる。
Example 6 A Ni stamper (mask) prepared by a conventional method was coated with Ge using a sputtering method. Next, a diamond-like carbon film with a thickness of 500 nm was deposited on this Ge layer by the DC green discharge CVD method using a CH4/H2 mixed gas.
A was filmed. In this way, the sol-gel work stamper according to the present invention can be produced.

本実施例によるダイヤモンド状カーボン膜で被覆された
Niスタンバでは、100回以上ゾルゲル転写を行って
も、スタンパ面に傷が付くこともなく、また、ゾルゲル
材料の付着も認められなかった。
In the Ni stamper coated with the diamond-like carbon film according to this example, even when sol-gel transfer was performed more than 100 times, the stamper surface was not scratched, and no sol-gel material was observed to adhere.

そのため、良好な転写が繰り返しできた。Therefore, good transfer could be repeated.

実施例7 実施例6のGeの代わりにGe02を用いて、実施例6
と同様にゾルゲル用ワークスタンバを作製した。
Example 7 Using Ge02 instead of Ge in Example 6, Example 6
A work stand for sol-gel was prepared in the same manner as above.

実施例2と同様にゾルゲル転写を行ったところ、100
回以上繰り返し使用しても、転写パタンの劣化は認めら
れなかった。
When sol-gel transfer was performed in the same manner as in Example 2, 100
No deterioration of the transferred pattern was observed even after repeated use several times.

実施例8 実施例6のGeの代わりにGe3N4を用いて、実施例
6と同様にゾルゲル用ワークスタンバを作製した。
Example 8 A sol-gel work stand was produced in the same manner as in Example 6, using Ge3N4 instead of Ge in Example 6.

実施例2と同様にゾルゲル転写を行ったところ、100
回以上繰り返し使用しても、転写バタンの劣化は認めら
れなかった。
When sol-gel transfer was performed in the same manner as in Example 2, 100
No deterioration of the transfer button was observed even after repeated use.

実施例9 通常の方法で作製されたNiスタンバ(マスク)に、ス
パッタ法によりCrをIOO人成膜した。ついで、この
Cr層上にCH4/H2混合ガスを用いてDCグロー放
電CVD法により、ダイヤモンド状カーボン膜を500
A戒膜した。このようにして本発明によるゾルゲル用ワ
ークスタンパが作製できる。
Example 9 An IOO film of Cr was manually formed by sputtering on a Ni standby (mask) prepared by a conventional method. Next, a diamond-like carbon film with a thickness of 500 mm was deposited on this Cr layer by DC glow discharge CVD using a CH4/H2 mixed gas.
A was arrested. In this way, the sol-gel work stamper according to the present invention can be produced.

本実施例によるダイヤモンド状カーボン膜で被覆された
Niスタンパでは、100回以上ゾルゲル転写を行って
も、スタンパ面に傷が付くこともなく、また、ゾルゲル
材料の付着も認められなかった。
In the Ni stamper coated with the diamond-like carbon film according to this example, even when sol-gel transfer was performed more than 100 times, the stamper surface was not scratched, and no sol-gel material was observed to adhere.

そのため、良好な転写が繰り返しできた。Therefore, good transfer could be repeated.

実施例10 通常の方法で作製されたNiスタンバ(マスク)に、ス
バッタ法によりTiを1ooA戒膜した。ついで、この
Ti層上にCH4/H2混合ガスを用いてDCグロー放
電CVD法により、ダイヤモンド状カーボン膜を50O
A或膜した。このようにして本発明によるゾルゲル用ワ
ークスタンパが作製できる。
Example 10 A 10A film of Ti was applied to a Ni standby (mask) prepared by a conventional method using a sputtering method. Next, a diamond-like carbon film was deposited on this Ti layer at 50O
A was filmed. In this way, the sol-gel work stamper according to the present invention can be produced.

本実施例によるダイヤモンド状カーボン膜で被覆された
Niスタンパでは、100回以上ゾルゲル転写を行って
も、スタンパ面に傷が付くこともなく、また、ゾルゲル
材料の付着も認められなかった。
In the Ni stamper coated with the diamond-like carbon film according to this example, even when sol-gel transfer was performed more than 100 times, the stamper surface was not scratched, and no sol-gel material was observed to adhere.

そのため、良好な転写が繰り返しできた。Therefore, good transfer could be repeated.

実施例l1 通常の方法で作製されたNiスタンパ(マスク)に、ス
パッタ法によりCuをIOOA或膜した。ついで、この
Cu層上にCH4/H2混合ガスを用いたDCグロー放
電CVD法により、ダイヤモンド状カーボン膜を50O
A戒膜した。このようにして本発明ゾルゲル用ワークス
タンパが作製できる。
Example 11 An IOOA film of Cu was deposited on a Ni stamper (mask) prepared by a conventional method using a sputtering method. Next, a diamond-like carbon film was deposited on this Cu layer at 50O
A was arrested. In this way, the sol-gel work stamp of the present invention can be produced.

実施例12 実施例11のCuの代わりにZrを用いて、実施例11
と同様にゾルゲル用ワークスタンパを作製した。
Example 12 Using Zr instead of Cu in Example 11, Example 11
A work stamp for sol-gel was prepared in the same manner as above.

実施例11と同様にゾルゲル転写を行ったところ、10
0回以上繰り返し使用しても、転写パタンの劣化は認め
られなかった。
When sol-gel transfer was performed in the same manner as in Example 11, 10
No deterioration of the transferred pattern was observed even after repeated use 0 times or more.

実施例13 実施例11のCuの代わりにCoを用いて、実施例11
と同様にゾルゲル用ワークスタンパを作製した。
Example 13 Using Co instead of Cu in Example 11, Example 11
A work stamp for sol-gel was prepared in the same manner as above.

実施例11と同様にゾルゲル転写を行ったところ、10
0回以上繰り返し使用しても、転写パタンの劣化は認め
られなかった。
When sol-gel transfer was performed in the same manner as in Example 11, 10
No deterioration of the transferred pattern was observed even after repeated use 0 times or more.

実施例14 実施例11のCuの代わりにAgを用いて、実施例l1
と同様にゾルゲル用ワークスタンパを作製した。
Example 14 Using Ag instead of Cu in Example 11, Example 11
A work stamp for sol-gel was prepared in the same manner as above.

実施例11と同様にゾルゲル転写を行ったところ、10
0回以上繰り返し使用しても、転写パタンの劣化は認め
らなかった。
When sol-gel transfer was performed in the same manner as in Example 11, 10
No deterioration of the transferred pattern was observed even after repeated use 0 times or more.

実施例15 実施例11のCuの代わりにA1を用いて、実施例l1
と同様にゾルゲル用ワークスタンバを作製した。
Example 15 Using A1 instead of Cu in Example 11, Example l1
A work stand for sol-gel was prepared in the same manner as above.

実施例11と同様にゾルゲル転写を行ったところ、10
0回以上繰り返し使用しても、転写パタンの劣化は認め
られなかった。
When sol-gel transfer was performed in the same manner as in Example 11, 10
No deterioration of the transferred pattern was observed even after repeated use 0 times or more.

実施例16 実施例11のCuの代わりにSnを用いて、実施例11
と同様にゾルゲル用ワークスタンパを作製した。
Example 16 Using Sn instead of Cu in Example 11, Example 11
A work stamp for sol-gel was prepared in the same manner as above.

実施例11と同様にゾルゲル転写を行ったところ、10
0回以上繰り返し使用しても、転写パタンの劣化は認め
られなかった。
When sol-gel transfer was performed in the same manner as in Example 11, 10
No deterioration of the transferred pattern was observed even after repeated use 0 times or more.

実施例17 実施例11のCuO代わりにpbを用いて、実施例11
と同様にゾルゲル用ワークスタンバを作製した。
Example 17 Using pb instead of CuO in Example 11, Example 11
A work stand for sol-gel was prepared in the same manner as above.

実施例11と同様にゾルゲル転写を行ったところ、10
0回以上繰り返し使用しても、転写パタンの劣化は認め
られなかった。
When sol-gel transfer was performed in the same manner as in Example 11, 10
No deterioration of the transferred pattern was observed even after repeated use 0 times or more.

(発明の効果) 以上述べてきたように、本発明によるスタンパは、従来
のスタンパに比べて短い工程で作製でき、歩留りあるい
はコストの面で有利であり、その工業上の意義は大きい
(Effects of the Invention) As described above, the stamper according to the present invention can be manufactured in a shorter process time than conventional stampers, and is advantageous in terms of yield and cost, and has great industrial significance.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図は本発明によるスタンパの概略断面
図である。
1 and 2 are schematic cross-sectional views of a stamper according to the present invention.

Claims (2)

【特許請求の範囲】[Claims] (1)微細な凹凸を有するNi薄板の上に、ダイヤモン
ド状カーボン層を形成したことを特徴とするスタンパ。
(1) A stamper characterized in that a diamond-like carbon layer is formed on a Ni thin plate having minute irregularities.
(2)微細な凹凸を有するNi薄板の上に、付着強化層
、ダイヤモンド状カーボン層を順次形成したことを特徴
とするスタンパ。
(2) A stamper characterized in that an adhesion reinforcing layer and a diamond-like carbon layer are sequentially formed on a Ni thin plate having fine irregularities.
JP1153976A 1989-06-16 1989-06-16 Stamper Expired - Lifetime JP2800274B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1153976A JP2800274B2 (en) 1989-06-16 1989-06-16 Stamper

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1153976A JP2800274B2 (en) 1989-06-16 1989-06-16 Stamper

Publications (2)

Publication Number Publication Date
JPH0319154A true JPH0319154A (en) 1991-01-28
JP2800274B2 JP2800274B2 (en) 1998-09-21

Family

ID=15574195

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1153976A Expired - Lifetime JP2800274B2 (en) 1989-06-16 1989-06-16 Stamper

Country Status (1)

Country Link
JP (1) JP2800274B2 (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1008105C2 (en) * 1998-01-23 1999-07-26 Axxicon Moulds Eindhoven Bv Injection mold.
EP1048427A2 (en) * 1999-04-26 2000-11-02 Nippon Sheet Glass Co., Ltd. Molding die, sol-gel composition produced using the die, and process for producing sol-gel composition
JP2006150807A (en) * 2004-11-30 2006-06-15 Hitachi Maxell Ltd Mold for molding fine structure, preparation method of mold for molding fine structure and molding method of fine structure
JP2007116163A (en) * 2005-10-18 2007-05-10 Korea Inst Of Machinery & Materials Stamp for fine imprint lithography and method for manufacturing the same
JP2007253410A (en) * 2006-03-22 2007-10-04 Toppan Printing Co Ltd Imprinting mold and its manufacturing method
JP2007266384A (en) * 2006-03-29 2007-10-11 Toppan Printing Co Ltd Mold for imprinting and manufacturing method thereof
JP2009149097A (en) * 2009-02-04 2009-07-09 Toshiba Corp Stamper for imprint working, and method for producing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0222012A (en) * 1988-07-11 1990-01-24 Tdk Corp Stamper for molding and manufacture thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0222012A (en) * 1988-07-11 1990-01-24 Tdk Corp Stamper for molding and manufacture thereof

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1008105C2 (en) * 1998-01-23 1999-07-26 Axxicon Moulds Eindhoven Bv Injection mold.
WO1999037471A1 (en) * 1998-01-23 1999-07-29 Axxicon Moulds Eindhoven B.V. Injection mould
US6238197B1 (en) 1998-01-23 2001-05-29 Axxicon Moulds Eindhoven B.V. Injection mould
EP1048427A2 (en) * 1999-04-26 2000-11-02 Nippon Sheet Glass Co., Ltd. Molding die, sol-gel composition produced using the die, and process for producing sol-gel composition
EP1048427A3 (en) * 1999-04-26 2002-11-13 Nippon Sheet Glass Co., Ltd. Molding die, sol-gel composition produced using the die, and process for producing sol-gel composition
JP2006150807A (en) * 2004-11-30 2006-06-15 Hitachi Maxell Ltd Mold for molding fine structure, preparation method of mold for molding fine structure and molding method of fine structure
JP2007116163A (en) * 2005-10-18 2007-05-10 Korea Inst Of Machinery & Materials Stamp for fine imprint lithography and method for manufacturing the same
US7914693B2 (en) 2005-10-18 2011-03-29 Korea Institute Of Machinery & Materials Stamp for micro/nano imprint lithography using diamond-like carbon and method of fabricating the same
JP2007253410A (en) * 2006-03-22 2007-10-04 Toppan Printing Co Ltd Imprinting mold and its manufacturing method
JP2007266384A (en) * 2006-03-29 2007-10-11 Toppan Printing Co Ltd Mold for imprinting and manufacturing method thereof
JP2009149097A (en) * 2009-02-04 2009-07-09 Toshiba Corp Stamper for imprint working, and method for producing the same

Also Published As

Publication number Publication date
JP2800274B2 (en) 1998-09-21

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