JPH03183037A - Optical memory medium - Google Patents
Optical memory mediumInfo
- Publication number
- JPH03183037A JPH03183037A JP1318799A JP31879989A JPH03183037A JP H03183037 A JPH03183037 A JP H03183037A JP 1318799 A JP1318799 A JP 1318799A JP 31879989 A JP31879989 A JP 31879989A JP H03183037 A JPH03183037 A JP H03183037A
- Authority
- JP
- Japan
- Prior art keywords
- refractive index
- layers
- transparent substrate
- layer
- index layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910052782 aluminium Inorganic materials 0.000 abstract description 9
- 229910052737 gold Inorganic materials 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052732 germanium Inorganic materials 0.000 abstract description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 abstract description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 2
- 238000002310 reflectometry Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 42
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000010931 gold Substances 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- -1 aluminum gold Chemical compound 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920005668 polycarbonate resin Polymers 0.000 description 2
- 239000004431 polycarbonate resin Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- YPMOSINXXHVZIL-UHFFFAOYSA-N sulfanylideneantimony Chemical compound [Sb]=S YPMOSINXXHVZIL-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は音響機器または情報機器などに用いられる光記
憶体に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical storage medium used in audio equipment, information equipment, etc.
［従来の技術］
従来、光記憶体の一つであるコンパクトディスク（以下
、ＣＤと略す。）の反射膜の材料としては、アルミニウ
ムや金が使用されている。しかし、近年、ＣＤにコンピ
ュータデータを記録したＣＤ−ＲＯＭが普及し・、従来
にも増して、高温・高湿下での保存性の高いものが望ま
れている。[Prior Art] Conventionally, aluminum and gold have been used as materials for reflective films of compact discs (hereinafter abbreviated as CDs), which are one type of optical storage medium. However, in recent years, CD-ROMs, in which computer data is recorded on CDs, have become widespread, and CD-ROMs with high storage stability under high temperature and high humidity are desired more than ever before.
［発明が解決しようとする課題］
従来の金あるいはアルミニウムの反射膜を使用した光記
憶体は、かかる過酷な環境下において、蒸着された反射
膜がアルミニウムの場合は腐食、また金の場合は下地体
から剥離し、信号読み取りの指標とされるエラーレート
が増加し、上記したようなニーズに適応できないという
問題があった。[Problems to be Solved by the Invention] In such harsh environments, optical storage bodies using conventional gold or aluminum reflective films corrode if the deposited reflective film is aluminum, or corrode if the deposited reflective film is gold. There is a problem that the device peels off from the body, increases the error rate used as an indicator for signal reading, and cannot be adapted to the above-mentioned needs.
またアルミニウムヤ金以外の反射膜材料は、反射率が不
足するため使用できない状態にあった。In addition, reflective film materials other than aluminum gold cannot be used due to insufficient reflectance.
本発明は、以上述べたような従来の課題を解決するため
になされたもので、耐候性、特に優れた耐食性と付着性
を有し、かつ高反射率の反射膜を具備する光記憶体を提
供することにある。The present invention has been made in order to solve the conventional problems as described above, and provides an optical storage medium that has weather resistance, particularly excellent corrosion resistance and adhesion, and is equipped with a reflective film of high reflectance. It is about providing.
［課題を解決するための手段］
本発明は、透明基板と、該透明基板の記録ビット形成面
上に被覆される高屈折率層および低屈折率層の順よりな
る組み合わせ層または低屈折率層および高屈折率層の順
よりなる組み合わせ層を少なくとも１層以上を備えてな
ることを特徴とする光記憶体、および透明基板と、該透
明基板の記録ビット形成面上に被覆される高屈折率層お
よび低屈折率層の順よりなる組み合わせ層を少なくとも
１層以上と、該組み合わせ層上に被覆される反射層とを
備えてなることを特徴とする光記憶体である。[Means for Solving the Problems] The present invention provides a combination layer or a low refractive index layer consisting of a transparent substrate, and a high refractive index layer and a low refractive index layer coated on the recording bit forming surface of the transparent substrate. and a high refractive index layer, and a transparent substrate, and a high refractive index coated on a recording bit forming surface of the transparent substrate. An optical memory comprising at least one combination layer consisting of a low refractive index layer and a low refractive index layer in this order, and a reflective layer coated on the combination layer.
本弁明で用いられる高屈折率層は主としてシリコン、ゲ
ルマニウム、はう素、硫化亜鉛、！！２化チタン、Ｍ化
カルシウム、酸化インジウム、酸化アンヂモン、硫化ア
ンチモン、テルル、テルル化カドミウム、テルル化鉛な
どを使用することができる。The high refractive index layers used in this defense are mainly silicon, germanium, boron, zinc sulfide,! ! Titanium dioxide, calcium Mide, indium oxide, andimony oxide, antimony sulfide, tellurium, cadmium telluride, lead telluride, and the like can be used.
また本発明で用いられる低屈折率層は酸化珪素。Furthermore, the low refractive index layer used in the present invention is silicon oxide.
ふっ化マグネシウム、酸化アルミニウム、ふつ化セリウ
ム、酸化マグネシウム、ぶつ化カルシウム。Magnesium fluoride, aluminum oxide, cerium fluoride, magnesium oxide, calcium fluoride.
ぶつ化ナトリウム、ぶつ化リチウム、カーボン（非晶質
またはダイアモンド）などを使用することができる。Sodium buttide, lithium buttride, carbon (amorphous or diamond), etc. can be used.
本発明で用いられる反射層はクロム、モリブデン、タン
グステン、バナジウム、ニオブ、タンタル、チタン、ジ
ルコニウム、ハフニウム、マンガン、レニウム、ルテニ
ウム、鉄、オスミウム、コバルト、ロジウム、イリジウ
ム、ニッケル、パラジウム、白金、亜鉛、カドミウム、
錫、鉛、タリウム、アンヂモン、ビスマス、インジウム
、ガリウムなどの金属またはそれらの合金または窒化チ
タン、窒化ジルコニウム、窒化ハフニウムなどの金属窒
化物を使用することができる。また、金または銀の単体
を反！）１層として用いることは付着性の面で、ざらに
銅、アルミニウムの場合は腐食性の点で望ましくないた
め、これらの金属を用いる場合には、前記反射層として
使われる金属との合金として使用することが望ましい。The reflective layer used in the present invention includes chromium, molybdenum, tungsten, vanadium, niobium, tantalum, titanium, zirconium, hafnium, manganese, rhenium, ruthenium, iron, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, zinc, cadmium,
Metals such as tin, lead, thallium, andimony, bismuth, indium, gallium, or alloys thereof, or metal nitrides such as titanium nitride, zirconium nitride, hafnium nitride, etc. can be used. Also, anti-gold or silver alone! ) It is undesirable to use copper or aluminum as a single layer because of its adhesion, and copper or aluminum is undesirable because of its corrosive properties. It is desirable to use it.
本発明で用いられる透明基板は、アクリル樹脂。The transparent substrate used in the present invention is made of acrylic resin.
ポリカーボネート樹脂、ポリオレフィン樹脂、エポキシ
樹脂、フッ素樹脂、ガラス、ゾルゲルガラスなどを用い
ることができる。Polycarbonate resin, polyolefin resin, epoxy resin, fluororesin, glass, sol-gel glass, etc. can be used.
本発明の光記憶体は、射出成形あるいはスタンパからの
密着転写などにより記録ビットを形成した透明基板の上
に、高屈折率層および低屈折率層を交互にスパッタ法、
イオンブレーティング法、クラスターイオンビーム法、
プラズマＣＶＤ法あるいは蒸着法等により被覆し、さら
に必要に応じて反射膜を上記と同様に組み合わせ層上に
被覆して形成する。The optical memory of the present invention is produced by sputtering, alternately forming high refractive index layers and low refractive index layers on a transparent substrate on which recording bits are formed by injection molding or contact transfer from a stamper.
Ion brating method, cluster ion beam method,
Coating is performed by a plasma CVD method or a vapor deposition method, and if necessary, a reflective film is further coated on the combination layer in the same manner as described above.
透明基板は、例えば、ガラス基板の上に珪酸重合物をス
ピン塗４５シ、スタンパを密着させてビットを転写させ
、ビット付きの透明基板を形成する。For example, a transparent substrate with bits is formed by spin-coating a silicic acid polymer on a glass substrate, and then applying a stamper in close contact with the glass substrate to transfer the bits.
またスタンパの型の中に樹脂を射出し、型から取り出し
てビット付きの透明基板を形成してもよい。Alternatively, the resin may be injected into a stamper mold and taken out from the mold to form a transparent substrate with bits.
このように作製した本発明の光記憶体は、高反射率と高
耐候性（高付着および高耐食性）を併せ持ち、従来の金
またはアルミニウム反射膜を直接透明基板に被覆したも
のよりはるかに優れた長期のデータ保存に関する信頼性
を有する。The optical memory of the present invention produced in this way has both high reflectance and high weather resistance (high adhesion and high corrosion resistance), and is far superior to conventional gold or aluminum reflective films coated directly on transparent substrates. Reliable for long-term data storage.
［作用］
本発明の光記憶体は、透明基板上に高屈折率層と低屈折
率層よりなる組み合わせ層を形成する。[Function] The optical memory of the present invention forms a combination layer of a high refractive index layer and a low refractive index layer on a transparent substrate.
この組み合わせ層によって、各層からの反射光が多重干
渉を起こし、この時、各層の膜厚を適切な値に選択する
と位相が一致し、反射率を１００％近くにまで高めるこ
とができる。従って、従来のように透明基板上に直接Ａ
℃やＡＬＪ等よりなる反射膜を形成しなくともよく、信
頼性の高い光記憶体が提供される。This combination of layers causes multiple interference in the reflected light from each layer, and at this time, if the film thickness of each layer is selected to an appropriate value, the phases match and the reflectance can be increased to nearly 100%. Therefore, unlike conventional methods, A
It is not necessary to form a reflective film made of .degree. C. or ALJ, etc., and a highly reliable optical storage body can be provided.
高屈折率層と低屈折率層の組み合わせ層のみでも反射率
を１００％近くにすることができるが、多層の組み合わ
せが必要となる。そこで低屈折率層と高屈折率層の組み
合わせ層上に反射層を設けると、少ない組み合わせ層数
で高反射率を得ることができる。また高屈折率層と低屈
折率層の屈折率の差が大きいはど該２層の膜厚を薄くす
ることができ、ビットの形状（深さ、巾、長さ）を損ね
ることが少ない。Although it is possible to achieve a reflectance of nearly 100% using only a combination of a high refractive index layer and a low refractive index layer, a combination of multiple layers is required. Therefore, if a reflective layer is provided on a combination layer of a low refractive index layer and a high refractive index layer, high reflectance can be obtained with a small number of combined layers. Furthermore, since the difference in refractive index between the high refractive index layer and the low refractive index layer is large, the film thickness of the two layers can be made thinner, and the shape (depth, width, length) of the bit is less likely to be impaired.
１実施例］
以下に、図面を参照して本発明の実施例を詳細に説明す
る。1 Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第１図は本発明の光記憶体の一実施例を示したもので、
第１図（ａ）はその部分断面図、第１図（ｂ）は（ａ）
におけるＡ部の拡大断面図である。ここで、透明基板１
、高屈折率層２、低屈折率層３がそれぞれ第１表の■お
よび■に示ず材質、構成あよσ膜厚て被覆された２個の
試料を作製した。FIG. 1 shows an embodiment of the optical storage body of the present invention.
Figure 1(a) is a partial cross-sectional view, Figure 1(b) is (a)
FIG. 3 is an enlarged sectional view of section A in FIG. Here, transparent substrate 1
Two samples were prepared in which the high refractive index layer 2 and the low refractive index layer 3 were coated with a material, a structure, and a film thickness not shown in (1) and (2), respectively, in Table 1.
第２図は本発明の光記憶体１の他の一実施例を示したも
ので、第２図（ａ）はその部分断面図、第２図（ｂ）は
（ａ）におけるＢ部の拡大断面図である。ここで、透明
基板１、低屈折率層３、高屈折率層２がそれぞれ第１表
の■およびＩＶに示す材質。FIG. 2 shows another embodiment of the optical storage medium 1 of the present invention, FIG. 2(a) is a partial sectional view thereof, and FIG. 2(b) is an enlarged view of part B in (a). FIG. Here, the transparent substrate 1, the low refractive index layer 3, and the high refractive index layer 2 are made of materials shown in ■ and IV in Table 1, respectively.
４Ｍ或および膜厚で被覆された２個の試料を作製した。Two samples were prepared coated with 4M and film thickness.
第３図は本発明の光記憶体１の他の一実施例を示す部分
断面図である。ごこて、透明基板１、高屈折率層２、低
屈折率層３、反射層４がそれぞれ第１表のＶ、 Ｖｌ、
ＶＮに示す材質、構成および膜厚で被覆された３個の
試料を作製した。FIG. 3 is a partial sectional view showing another embodiment of the optical storage medium 1 of the present invention. The iron, transparent substrate 1, high refractive index layer 2, low refractive index layer 3, and reflective layer 4 are V, Vl, and Vl in Table 1, respectively.
Three samples coated with the material, configuration, and film thickness shown in VN were prepared.
得られた各試料の反則率を併けて第１表に示す。Table 1 also shows the fouling rate of each sample obtained.
（以下余白）
次に、これらの試料とポリカーボネート樹脂からなる透
明基板の上にアルミニウムおよび金を反射膜として形成
した比較試料について、温度７０℃、相対湿度９５％の
耐候性試験を６ケ月間行い、信号の良否の指標となるエ
ラー数を測定した。６ケ月の耐候性試験後、本発明の試
料のエラー数は全く劣化がみられなかったが、アルミニ
ウム反射膜を用いた比較試料は腐食により、また金反射
膜を用いた比較試料は剥離によりエラーの測定が不能に
なるほど劣化した。(Left below) Next, these samples and a comparative sample in which aluminum and gold were formed as a reflective film on a transparent substrate made of polycarbonate resin were subjected to a weather resistance test at a temperature of 70°C and a relative humidity of 95% for 6 months. We measured the number of errors, which is an indicator of signal quality. After six months of weather resistance testing, the number of errors for the sample of the present invention showed no deterioration at all, but the comparative sample using an aluminum reflective film showed errors due to corrosion, and the comparative sample using a gold reflective film showed errors due to peeling. deteriorated to such an extent that it became impossible to measure it.
［発明の効果］
以上、詳細に述べたように、本発明の光記憶体は透明基
板との密着性に優れ、かつ耐食性および高反射率を有し
ており、アルミニウムヤ金の反射膜を使用した光記憶体
に比べてはるかに信頼性を向上させることができる。[Effects of the Invention] As described in detail above, the optical memory of the present invention has excellent adhesion to a transparent substrate, corrosion resistance, and high reflectance, and uses an aluminum alloy reflective film. Reliability can be significantly improved compared to conventional optical storage media.
第１図から第３図はそれぞれ本発明の光記憶体の一実施
例の部分断面図である。
１・・・透明基板
２・・・高屈折率層
３・・・低屈折率層
４・・・反射層1 to 3 are partial cross-sectional views of one embodiment of the optical storage body of the present invention, respectively. 1... Transparent substrate 2... High refractive index layer 3... Low refractive index layer 4... Reflective layer
Claims (2)
被覆される高屈折率層および低屈折率層の順よりなる組
み合わせ層または低屈折率層および高屈折率層の順より
なる組み合わせ層を少なくとも１層以上を備えてなるこ
とを特徴とする光記憶体。(1) A combination layer consisting of a transparent substrate and a high refractive index layer and a low refractive index layer coated on the recording bit forming surface of the transparent substrate, or a combination layer consisting of a low refractive index layer and a high refractive index layer, in this order. An optical memory comprising at least one layer.
被覆される高屈折率層および低屈折率層の順よりなる組
み合わせ層を少なくとも１層以上と、該組み合わせ層上
に被覆される反射層とを備えてなることを特徴とする光
記憶体。(2) a transparent substrate, at least one combination layer consisting of a high refractive index layer and a low refractive index layer coated on the recording bit forming surface of the transparent substrate in this order; and a combination layer coated on the combination layer. An optical memory comprising a reflective layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1318799A JP2647982B2 (en) | 1989-12-11 | 1989-12-11 | Optical memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1318799A JP2647982B2 (en) | 1989-12-11 | 1989-12-11 | Optical memory |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03183037A true JPH03183037A (en) | 1991-08-09 |
| JP2647982B2 JP2647982B2 (en) | 1997-08-27 |
Family
ID=18103075
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1318799A Expired - Fee Related JP2647982B2 (en) | 1989-12-11 | 1989-12-11 | Optical memory |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2647982B2 (en) |
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|---|---|---|---|---|
| JPH08102084A (en) * | 1994-09-30 | 1996-04-16 | Nec Corp | Information recording medium and its manufacture |
| JP2008097820A (en) * | 2002-01-18 | 2008-04-24 | Koninkl Philips Electronics Nv | Optical data storage medium for write-once recording |
| US20140138785A1 (en) * | 2012-03-22 | 2014-05-22 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
| US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
| US9673250B2 (en) | 2013-06-29 | 2017-06-06 | Sionyx, Llc | Shallow trench textured regions and associated methods |
| US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US9741761B2 (en) | 2010-04-21 | 2017-08-22 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US9761739B2 (en) | 2010-06-18 | 2017-09-12 | Sionyx, Llc | High speed photosensitive devices and associated methods |
| US9762830B2 (en) | 2013-02-15 | 2017-09-12 | Sionyx, Llc | High dynamic range CMOS image sensor having anti-blooming properties and associated methods |
| US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US9939251B2 (en) | 2013-03-15 | 2018-04-10 | Sionyx, Llc | Three dimensional imaging utilizing stacked imager devices and associated methods |
| US10244188B2 (en) | 2011-07-13 | 2019-03-26 | Sionyx, Llc | Biometric imaging devices and associated methods |
| US10361083B2 (en) | 2004-09-24 | 2019-07-23 | President And Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
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Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08102084A (en) * | 1994-09-30 | 1996-04-16 | Nec Corp | Information recording medium and its manufacture |
| US10374109B2 (en) | 2001-05-25 | 2019-08-06 | President And Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
| JP2008097820A (en) * | 2002-01-18 | 2008-04-24 | Koninkl Philips Electronics Nv | Optical data storage medium for write-once recording |
| US10361083B2 (en) | 2004-09-24 | 2019-07-23 | President And Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
| US10741399B2 (en) | 2004-09-24 | 2020-08-11 | President And Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
| US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US10361232B2 (en) | 2009-09-17 | 2019-07-23 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
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| US10229951B2 (en) | 2010-04-21 | 2019-03-12 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
| US10505054B2 (en) | 2010-06-18 | 2019-12-10 | Sionyx, Llc | High speed photosensitive devices and associated methods |
| US9761739B2 (en) | 2010-06-18 | 2017-09-12 | Sionyx, Llc | High speed photosensitive devices and associated methods |
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| US10269861B2 (en) | 2011-06-09 | 2019-04-23 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
| US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
| US10244188B2 (en) | 2011-07-13 | 2019-03-26 | Sionyx, Llc | Biometric imaging devices and associated methods |
| US10224359B2 (en) | 2012-03-22 | 2019-03-05 | Sionyx, Llc | Pixel isolation elements, devices and associated methods |
| US9905599B2 (en) | 2012-03-22 | 2018-02-27 | Sionyx, Llc | Pixel isolation elements, devices and associated methods |
| US9064764B2 (en) * | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
| US20140138785A1 (en) * | 2012-03-22 | 2014-05-22 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
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