JPH0317795B2 - - Google Patents

Info

Publication number: JPH0317795B2
Authority: JP; Japan
Prior art keywords: electrode; substrate; electrodes; arc; coating
Prior art date: 1984-05-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

JP4759385A

Other languages

English (en)

Japanese (ja)

Other versions

JPS60251184A (ja

Inventor

Pinkuhasobu Ejuaado

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Vapor Technologies Inc

Original Assignee

Vapor Technologies Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1984-05-25

Filing date

1985-03-12

Publication date

1991-03-08

1984-05-25 Priority claimed from US06/614,434 external-priority patent/US4505948A/en

1985-03-12 Application filed by Vapor Technologies Inc filed Critical Vapor Technologies Inc

1985-12-11 Publication of JPS60251184A publication Critical patent/JPS60251184A/ja

1991-03-08 Publication of JPH0317795B2 publication Critical patent/JPH0317795B2/ja

Status Granted legal-status Critical Current

Links

239000000758 substrate Substances 0.000 claims description 85
229910052751 metal Inorganic materials 0.000 claims description 57
239000002184 metal Substances 0.000 claims description 57
238000000576 coating method Methods 0.000 claims description 52
239000011248 coating agent Substances 0.000 claims description 42
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 33
229910052802 copper Inorganic materials 0.000 claims description 33
239000010949 copper Substances 0.000 claims description 33
238000000034 method Methods 0.000 claims description 29
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 29
229910052721 tungsten Inorganic materials 0.000 claims description 29
239000010937 tungsten Substances 0.000 claims description 29
229910052710 silicon Inorganic materials 0.000 claims description 23
239000010703 silicon Substances 0.000 claims description 23
239000000463 material Substances 0.000 claims description 21
239000000919 ceramic Substances 0.000 claims description 20
238000000151 deposition Methods 0.000 claims description 19
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
229910052719 titanium Inorganic materials 0.000 claims description 11
239000010936 titanium Substances 0.000 claims description 11
230000008021 deposition Effects 0.000 claims description 10
239000000126 substance Substances 0.000 claims description 10
PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
230000008018 melting Effects 0.000 claims description 6
238000002844 melting Methods 0.000 claims description 6
229910052715 tantalum Inorganic materials 0.000 claims description 4
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
238000005422 blasting Methods 0.000 claims description 3
229910052759 nickel Inorganic materials 0.000 claims description 3
239000002245 particle Substances 0.000 claims description 3
PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
238000010891 electric arc Methods 0.000 claims 2
239000008187 granular material Substances 0.000 claims 1
238000007788 roughening Methods 0.000 claims 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 22
239000002244 precipitate Substances 0.000 description 13
239000003870 refractory metal Substances 0.000 description 13
150000002739 metals Chemical class 0.000 description 11
230000008020 evaporation Effects 0.000 description 10
238000001704 evaporation Methods 0.000 description 10
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
230000000694 effects Effects 0.000 description 8
229910010271 silicon carbide Inorganic materials 0.000 description 8
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 8
229910052799 carbon Inorganic materials 0.000 description 7
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
239000010931 gold Substances 0.000 description 7
229910021332 silicide Inorganic materials 0.000 description 7
229910052737 gold Inorganic materials 0.000 description 6
239000003381 stabilizer Substances 0.000 description 6
238000010438 heat treatment Methods 0.000 description 5
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
235000012239 silicon dioxide Nutrition 0.000 description 5
229910052782 aluminium Inorganic materials 0.000 description 4
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
239000007789 gas Substances 0.000 description 4
230000006698 induction Effects 0.000 description 4
230000007246 mechanism Effects 0.000 description 4
239000000203 mixture Substances 0.000 description 4
230000004048 modification Effects 0.000 description 4
238000012986 modification Methods 0.000 description 4
TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
239000012071 phase Substances 0.000 description 4
239000004065 semiconductor Substances 0.000 description 4
238000007740 vapor deposition Methods 0.000 description 4
ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
229910052581 Si3N4 Inorganic materials 0.000 description 3
229910045601 alloy Inorganic materials 0.000 description 3
239000000956 alloy Substances 0.000 description 3
230000006837 decompression Effects 0.000 description 3
229910052750 molybdenum Inorganic materials 0.000 description 3
239000011733 molybdenum Substances 0.000 description 3
238000013021 overheating Methods 0.000 description 3
230000008569 process Effects 0.000 description 3
239000000047 product Substances 0.000 description 3
239000011253 protective coating Substances 0.000 description 3
239000010453 quartz Substances 0.000 description 3
239000000377 silicon dioxide Substances 0.000 description 3
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
239000004332 silver Substances 0.000 description 3
239000007787 solid Substances 0.000 description 3
239000012808 vapor phase Substances 0.000 description 3
UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
230000000712 assembly Effects 0.000 description 2
238000000429 assembly Methods 0.000 description 2
239000013078 crystal Substances 0.000 description 2
238000010586 diagram Methods 0.000 description 2
229910002804 graphite Inorganic materials 0.000 description 2
239000010439 graphite Substances 0.000 description 2
239000007791 liquid phase Substances 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
150000001247 metal acetylides Chemical class 0.000 description 2
230000002829 reductive effect Effects 0.000 description 2
230000002441 reversible effect Effects 0.000 description 2
229910052709 silver Inorganic materials 0.000 description 2
230000009466 transformation Effects 0.000 description 2
MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
229910052726 zirconium Inorganic materials 0.000 description 2
229910001316 Ag alloy Inorganic materials 0.000 description 1
229910001020 Au alloy Inorganic materials 0.000 description 1
229910052582 BN Inorganic materials 0.000 description 1
PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
229910000881 Cu alloy Inorganic materials 0.000 description 1
206010020751 Hypersensitivity Diseases 0.000 description 1
229910000990 Ni alloy Inorganic materials 0.000 description 1
BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
230000001464 adherent effect Effects 0.000 description 1
208000026935 allergic disease Diseases 0.000 description 1
239000012298 atmosphere Substances 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
238000009835 boiling Methods 0.000 description 1
238000005524 ceramic coating Methods 0.000 description 1
238000006243 chemical reaction Methods 0.000 description 1
239000012141 concentrate Substances 0.000 description 1
238000009833 condensation Methods 0.000 description 1
230000005494 condensation Effects 0.000 description 1
238000001816 cooling Methods 0.000 description 1
238000005260 corrosion Methods 0.000 description 1
230000007797 corrosion Effects 0.000 description 1
229910003460 diamond Inorganic materials 0.000 description 1
239000010432 diamond Substances 0.000 description 1
238000006073 displacement reaction Methods 0.000 description 1
239000007772 electrode material Substances 0.000 description 1
230000003628 erosive effect Effects 0.000 description 1
239000010408 film Substances 0.000 description 1
230000009610 hypersensitivity Effects 0.000 description 1
239000007788 liquid Substances 0.000 description 1
230000000873 masking effect Effects 0.000 description 1
239000000155 melt Substances 0.000 description 1
229910001092 metal group alloy Inorganic materials 0.000 description 1
239000002923 metal particle Substances 0.000 description 1
150000004767 nitrides Chemical class 0.000 description 1
239000012299 nitrogen atmosphere Substances 0.000 description 1
230000001590 oxidative effect Effects 0.000 description 1
239000003380 propellant Substances 0.000 description 1
230000001681 protective effect Effects 0.000 description 1
238000002310 reflectometry Methods 0.000 description 1
230000004044 response Effects 0.000 description 1
238000005488 sandblasting Methods 0.000 description 1
229910000679 solder Inorganic materials 0.000 description 1
238000005476 soldering Methods 0.000 description 1
239000007790 solid phase Substances 0.000 description 1
230000000087 stabilizing effect Effects 0.000 description 1
229920003002 synthetic resin Polymers 0.000 description 1
239000000057 synthetic resin Substances 0.000 description 1
239000010409 thin film Substances 0.000 description 1
229910021341 titanium silicide Inorganic materials 0.000 description 1
238000000844 transformation Methods 0.000 description 1
230000007704 transition Effects 0.000 description 1
WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
229910021342 tungsten silicide Inorganic materials 0.000 description 1
235000012431 wafers Nutrition 0.000 description 1
239000002699 waste material Substances 0.000 description 1
238000003466 welding Methods 0.000 description 1

Landscapes

Surface Treatment Of Glass (AREA)
Physical Vapour Deposition (AREA)

JP4759385A 1984-05-25 1985-03-12 基体をコ−テイングする方法 Granted JPS60251184A (ja)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
US614434		1984-05-25
US06/614,434 US4505948A (en)	1983-05-13	1984-05-25	Method of coating ceramics and quartz crucibles with material electrically transformed into a vapor phase
US626056		1984-06-29
US667641		1984-11-02

Related Child Applications (1)

Application Number	Title	Priority Date	Filing Date
JP2279519A Division JPH03158478A (ja)	1984-05-25	1990-10-19	基体をコーテイングする方法および装置

Publications (2)

Publication Number	Publication Date
JPS60251184A JPS60251184A (ja)	1985-12-11
JPH0317795B2 true JPH0317795B2 (fr)	1991-03-08

Family

ID=24461256

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP4759385A Granted JPS60251184A (ja)	1984-05-25	1985-03-12	基体をコ−テイングする方法

Country Status (1)

Country	Link
JP (1)	JPS60251184A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2605279B2 (ja) *	1987-04-20	1997-04-30	神鋼電機株式会社	直流電源装置
JP2718731B2 (ja) *	1988-12-21	1998-02-25	株式会社神戸製鋼所	真空アーク蒸着装置及び真空アーク蒸着方法

1985
- 1985-03-12 JP JP4759385A patent/JPS60251184A/ja active Granted

Also Published As

Publication number	Publication date
JPS60251184A (ja)	1985-12-11

Publication	Publication Date	Title
US4505948A (en)	1985-03-19	Method of coating ceramics and quartz crucibles with material electrically transformed into a vapor phase
JPS625228B2 (fr)	1987-02-03
KR20170072882A (ko)	2017-06-27	부품, 밴드형 물질, 또는 도구의 표면에 코팅을 형성하는 장치
US5939151A (en)	1999-08-17	Method and apparatus for reactive plasma atomization
US4438153A (en)	1984-03-20	Method of and apparatus for the vapor deposition of material upon a substrate
US4548670A (en)	1985-10-22	Silicon melting and evaporation method for high purity applications
JPH03285075A (ja)	1991-12-16	タングステンルツボの製造方法
JPH03158478A (ja)	1991-07-08	基体をコーテイングする方法および装置
JPH0317795B2 (fr)	1991-03-08
US4978556A (en)	1990-12-18	Electrode for vapor deposition and vapor-deposition method using same
JP2546591B2 (ja)	1996-10-23	材料を蒸着させる装置と方法
JP2004211122A (ja)	2004-07-29	高耐電圧性部材
US4924135A (en)	1990-05-08	Electrode for vapor deposition and vapor-deposition method using same
JP2857743B2 (ja)	1999-02-17	薄膜形成装置および薄膜形成方法
US4569307A (en)	1986-02-11	Silicon melting and evaporation apparatus for high purity applications
US7920369B2 (en)	2011-04-05	Apparatus and method for nano plasma deposition
US20110129671A1 (en)	2011-06-02	Method of producing quantum confined indium nitride structures
KR100419169B1 (ko)	2004-02-18	스팀 플라즈마를 이용한 장수명 흑연전극봉 제조방법
JPH049464A (ja)	1992-01-14	蒸着用電極及びこれを用いる蒸着法
JPS61261201A (ja)	1986-11-19	金属酸化物微粉末の製造方法および製造装置
JPH11111449A (ja)	1999-04-23	プラズマ発生用電極棒およびその製造方法並びにその使用方法
JPH03215661A (ja)	1991-09-20	イオンプレーティング装置
JP2003213412A (ja)	2003-07-30	プラズマイオン注入・成膜方法および装置
JPS6132252B2 (fr)	1986-07-25
Mihara	2000	Development of Coating Technologies Using Nano Particles