JPH0317656U - - Google Patents

Info

Publication number
JPH0317656U
JPH0317656U JP1989078044U JP7804489U JPH0317656U JP H0317656 U JPH0317656 U JP H0317656U JP 1989078044 U JP1989078044 U JP 1989078044U JP 7804489 U JP7804489 U JP 7804489U JP H0317656 U JPH0317656 U JP H0317656U
Authority
JP
Japan
Prior art keywords
led chip
chip array
conductive pattern
transparent
electrode film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1989078044U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1989078044U priority Critical patent/JPH0317656U/ja
Publication of JPH0317656U publication Critical patent/JPH0317656U/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L24/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/23Structure, shape, material or disposition of the high density interconnect connectors after the connecting process
    • H01L2224/24Structure, shape, material or disposition of the high density interconnect connectors after the connecting process of an individual high density interconnect connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図aは本考案のLEDチツプアレイの一実
施例の側断面図、第1図bは同平面図、第2図a
は本考案の他の実施例の側断面図、第2図bは同
平面図、第3図aは本考案の他の実施例の側断面
図、第3図bは同平面図、第4図aは本考案の他
の実施例の側断面図、第4図bは同平面図、第5
図aは従来のLEDチツプアレイの側断面図、第
5図bは同平面図である。 1…LEDチツプアレイベース基板、2…導電
性パターン、4a〜4f…LEDチツプ、9…透
明絶縁封止樹脂、12…透明電極フイルム。
Figure 1a is a side sectional view of an embodiment of the LED chip array of the present invention, Figure 1b is a plan view of the same, Figure 2a is
is a side sectional view of another embodiment of the present invention, FIG. 2b is a plan view of the same, FIG. 3a is a side sectional view of another embodiment of the present invention, FIG. Figure a is a side sectional view of another embodiment of the present invention, Figure 4b is a plan view of the same, Figure 5
FIG. 5A is a side sectional view of a conventional LED chip array, and FIG. 5B is a plan view thereof. DESCRIPTION OF SYMBOLS 1... LED chip array base substrate, 2... Conductive pattern, 4a-4f... LED chip, 9... Transparent insulating sealing resin, 12... Transparent electrode film.

Claims (1)

【実用新案登録請求の範囲】 (1) 少なくともLEDチツプをダイボンデイン
グするための導電性パターンがその絶縁基板上に
形成されているLEDチツプアレイベース基板と
、上記導電性パターン上にダイボンデイングされ
たLEDチツプと、上記LEDチツプの周囲に上
記LEDチツプと略同じ高さの厚みを有して、上
記LEDチツプアレイベース基板上に形成された
透明絶縁封止樹脂と、上記LEDチツプ及び上記
透明絶縁封止樹脂上に、上記透明絶縁封止樹脂と
で、上記LEDチツプを封止するように形成され
LEDチツプを点燈させる為の電圧を供給する為
の導電パターン部を有する透明電極フイルムから
成ることを特徴とするLEDチツプアレイ。 (2) 透明電極フイルム上の導電パターン部と、
LEDチツプアレイベース基板上に形成されたL
EDチツプアレイ点燈用導電パターン間を導電性
スペーサーによつて接続してなる請求項1記載の
LEDチツプアレイ。 (3) 透明電極フイルム上の導電パターンの一部
と、絶縁基板上形成されたLEDチツプアレイ点
燈用導電パターン間を直接接続した請求項1記載
のLEDチツプアレイ。 (4) 透明導電性ペーストを透明電極フイルムに
かえて使用する請求項1、または2または3記載
のLEDチツプアレイ。
[Claims for Utility Model Registration] (1) An LED chip array base substrate having at least a conductive pattern formed on the insulating substrate for die-bonding the LED chips, and an LED chip array base substrate having a conductive pattern formed on the insulating substrate; an LED chip, a transparent insulating sealing resin formed around the LED chip on the LED chip array base substrate and having a thickness substantially the same as that of the LED chip; and the LED chip and the transparent insulating resin. A transparent electrode film is formed on the sealing resin to seal the LED chip with the transparent insulating sealing resin, and has a conductive pattern portion for supplying a voltage for lighting the LED chip. An LED chip array characterized by: (2) a conductive pattern portion on the transparent electrode film;
L formed on the LED chip array base substrate
2. The LED chip array according to claim 1, wherein conductive patterns for lighting the ED chip array are connected by conductive spacers. (3) The LED chip array according to claim 1, wherein a part of the conductive pattern on the transparent electrode film and a conductive pattern for lighting the LED chip array formed on the insulating substrate are directly connected. (4) The LED chip array according to claim 1, 2 or 3, wherein a transparent conductive paste is used in place of the transparent electrode film.
JP1989078044U 1989-06-30 1989-06-30 Pending JPH0317656U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1989078044U JPH0317656U (en) 1989-06-30 1989-06-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1989078044U JPH0317656U (en) 1989-06-30 1989-06-30

Publications (1)

Publication Number Publication Date
JPH0317656U true JPH0317656U (en) 1991-02-21

Family

ID=31620975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1989078044U Pending JPH0317656U (en) 1989-06-30 1989-06-30

Country Status (1)

Country Link
JP (1) JPH0317656U (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003078171A (en) * 2001-09-03 2003-03-14 Sony Corp Wiring and its forming method, connection hole and its manufacturing method, wiring body and its forming method, display element and its manufacturing method, and image display device and its manufacturing method
WO2004077578A2 (en) * 2003-02-28 2004-09-10 Osram Opto Semiconductors Gmbh Lighting module based on light-emitting diodes and method for the production thereof
JP2008515208A (en) * 2004-09-30 2008-05-08 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Optoelectronic device with wireless contact
JP2015109331A (en) * 2013-12-04 2015-06-11 シャープ株式会社 Nitride semiconductor light-emitting device
JP2016181502A (en) * 2015-03-23 2016-10-13 ヒュンダイ・モービス・カンパニー・リミテッド Lighting device
KR101847447B1 (en) * 2017-11-23 2018-04-10 류양석 Buckle
JP2021068920A (en) * 2021-02-02 2021-04-30 富士ゼロックス株式会社 Light-emitting element array

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5689780A (en) * 1979-12-22 1981-07-21 Fujitsu Ltd Production of lighttemittinggdiode display panel
JPS5752073A (en) * 1980-09-16 1982-03-27 Tokyo Shibaura Electric Co Method of producing display unit
JPS5850582A (en) * 1981-09-22 1983-03-25 株式会社東芝 Display using light emitting diode
JPS58140782A (en) * 1982-02-16 1983-08-20 株式会社東芝 Luminous display
JPS63164482A (en) * 1986-12-26 1988-07-07 Res Dev Corp Of Japan Light emitting diode device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5689780A (en) * 1979-12-22 1981-07-21 Fujitsu Ltd Production of lighttemittinggdiode display panel
JPS5752073A (en) * 1980-09-16 1982-03-27 Tokyo Shibaura Electric Co Method of producing display unit
JPS5850582A (en) * 1981-09-22 1983-03-25 株式会社東芝 Display using light emitting diode
JPS58140782A (en) * 1982-02-16 1983-08-20 株式会社東芝 Luminous display
JPS63164482A (en) * 1986-12-26 1988-07-07 Res Dev Corp Of Japan Light emitting diode device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003078171A (en) * 2001-09-03 2003-03-14 Sony Corp Wiring and its forming method, connection hole and its manufacturing method, wiring body and its forming method, display element and its manufacturing method, and image display device and its manufacturing method
WO2004077578A2 (en) * 2003-02-28 2004-09-10 Osram Opto Semiconductors Gmbh Lighting module based on light-emitting diodes and method for the production thereof
WO2004077578A3 (en) * 2003-02-28 2005-07-21 Osram Opto Semiconductors Gmbh Lighting module based on light-emitting diodes and method for the production thereof
US7560741B2 (en) 2003-02-28 2009-07-14 Osram Opto Semiconductors Gmbh Lighting module and method for the production thereof
JP2008515208A (en) * 2004-09-30 2008-05-08 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング Optoelectronic device with wireless contact
JP2015109331A (en) * 2013-12-04 2015-06-11 シャープ株式会社 Nitride semiconductor light-emitting device
JP2016181502A (en) * 2015-03-23 2016-10-13 ヒュンダイ・モービス・カンパニー・リミテッド Lighting device
KR101847447B1 (en) * 2017-11-23 2018-04-10 류양석 Buckle
JP2021068920A (en) * 2021-02-02 2021-04-30 富士ゼロックス株式会社 Light-emitting element array

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