JPH03169008A - Vapor growth apparatus - Google Patents
Vapor growth apparatusInfo
- Publication number
- JPH03169008A JPH03169008A JP30876289A JP30876289A JPH03169008A JP H03169008 A JPH03169008 A JP H03169008A JP 30876289 A JP30876289 A JP 30876289A JP 30876289 A JP30876289 A JP 30876289A JP H03169008 A JPH03169008 A JP H03169008A
- Authority
- JP
- Japan
- Prior art keywords
- tube
- double inner
- reaction
- inner tube
- double
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 235000012431 wafers Nutrition 0.000 claims abstract description 34
- 239000012495 reaction gas Substances 0.000 claims abstract description 28
- 238000001947 vapour-phase growth Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000010453 quartz Substances 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract 1
- 238000009423 ventilation Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
半導体装置の製造等に用いられる気相成長装置に関し，
ウェハ周辺の膜厚が所望値より厚くならないようにウェ
ハ内の膜厚分布を改善し，製造歩留の向上を目的とし．
反応管（１）と，該反応管内に該反応管と略同心に保持
された二重内管（２Ａ） ， （２Ｂ）と，該二重内管
の内側に複数枚のウェハ（４）を該二重内管の軸に垂直
に且つ相互に間隔を開けて保持するサセブタ（３）と，
該二重内管の上部内側に反応ガスを導入する反応ガス導
入管（５）と，該反応管の下部より排気する排気管（６
）とを有し，該二重内管は相互にスライ゛ド可能な両端
開放の二重の管であって，それぞれの管に複数の通気孔
（７）が開口され，二重の管を相互にスライドすること
により該二重内管を貫通する開口数を変化させて該二重
内管からの反応ガス流出量を制御でき且つ該開口数は反
応ガス導入側は多く排気側が少なく調節できるように構
或する。[Detailed Description of the Invention] [Summary] Regarding a vapor phase growth apparatus used for manufacturing semiconductor devices, etc., the film thickness distribution within the wafer is improved so that the film thickness around the wafer does not become thicker than a desired value, and the manufacturing yield is improved. The aim is to improve A reaction tube (1), double inner tubes (2A) and (2B) held within the reaction tube substantially concentrically with the reaction tube, and a plurality of wafers (4) inside the double inner tube. a susceptor (3) held perpendicularly to the axis of the double inner tube and spaced apart from each other;
A reaction gas introduction pipe (5) that introduces the reaction gas into the inside of the upper part of the double inner tube, and an exhaust pipe (6) that exhausts the gas from the lower part of the reaction tube.
), and the double inner tube is a double tube with both ends open so that it can slide into each other, and each tube has a plurality of ventilation holes (7). By sliding relative to each other, the number of openings passing through the double inner tube can be changed to control the amount of reaction gas flowing out from the double inner tube, and the number of openings can be adjusted to be larger on the reaction gas introduction side and smaller on the exhaust side. It is structured as follows.
本発明は半導体装置の製造等に用いられる気相成長装置
に関する。The present invention relates to a vapor phase growth apparatus used for manufacturing semiconductor devices and the like.
近年， ＬＳＩの微細化にともない，化学気相成長膜の
薄膜化が要求されるようになった。このため戒膜のウェ
ハ内膜厚分布は数％の良好な分布が要求される。In recent years, with the miniaturization of LSIs, there has been a demand for thinner chemical vapor deposition films. For this reason, the distribution of the thickness of the film within the wafer is required to be a good distribution of several percent.
本発明は膜厚分布を向上した減圧化学気相成長装置に適
用することができる。The present invention can be applied to a reduced pressure chemical vapor deposition apparatus with improved film thickness distribution.
（従来の技術〕 第４図は従来例による装置の斜視図である。(Conventional technology) FIG. 4 is a perspective view of a conventional device.
従来の減圧気相成長装置は図のように単芯の反応管ｌ内
にウェハ４を複数枚反応管に垂直に保持し．反応ガス導
入管５より反応管内に反応ガスを導入し．排気管６より
排気して反応管内の反応ガス圧を所定の値に保ってウェ
ハ４上に或膜していた。As shown in the figure, in a conventional vacuum vapor phase growth apparatus, a plurality of wafers 4 are held vertically in a single-core reaction tube l. A reaction gas is introduced into the reaction tube through the reaction gas introduction tube 5. A film was deposited on the wafer 4 while the reaction gas pressure in the reaction tube was kept at a predetermined value by exhausting the gas through the exhaust pipe 6.
第５図は従来装置内の反応ガスの流れを説明する断面図
である。FIG. 5 is a cross-sectional view illustrating the flow of reaction gas in a conventional device.
反応ガスは反応管の上から下に向かって矢印のように流
れる。The reaction gas flows from the top to the bottom of the reaction tube in the direction of the arrow.
［発明が解決しようとする課題］
このときの反応ガスの流れは第５図に示すように，ウェ
ハ周辺でのガスの量は多く，ウエＡ中心部にまわり込ん
でくる流れは少ない。このため，ウェハ周辺部の膜厚は
中心部に比べて厚くなる傾向にあった。[Problems to be Solved by the Invention] As shown in FIG. 5, the flow of the reaction gas at this time is large in the periphery of the wafer, and the flow surrounding the center of the wafer A is small. For this reason, the film thickness at the periphery of the wafer tends to be thicker than at the center.
本発明はウェハ周辺の膜厚が所望値より厚くならないよ
うにウェハ内の膜厚分布を改善し．製造歩留の向上を目
的とする。The present invention improves the film thickness distribution within the wafer so that the film thickness around the wafer does not become thicker than a desired value. The purpose is to improve manufacturing yield.
（課題を解決するための手段〕
上記課題の解決は，反応管（１）と，該反応管内に該反
応管と略同心に保持された二重内管（２Ａ）．（２Ｂ）
と，該二重内管の内側に複数枚のウェハ（４）を該二重
内管の軸に垂直に且つ相互に間隔を開けて保持するサセ
プタ（３）と．該二重内管の上部内側に反応ガスを導入
する反応ガス導入管（５）と．該反応管の下部より排気
する排気管（６）とを有し，該二重内管は相互にスライ
ド可能な両端開放の二重の管であって，それぞれの管に
複数の通気孔（７）が開口され，二重の管を相互にスラ
イドすることにより該二重内管を貫通する開口数を変化
させて該二重内管からの反応ガス流出量を制御でき且つ
該開口数は反応ガス導入側は多く排気側が少なく調節で
きるように構成されている気相威長装置により達成され
る。(Means for Solving the Problem) The solution to the above problem consists of a reaction tube (1) and a double inner tube (2A) (2B) held within the reaction tube substantially concentrically with the reaction tube.
and a susceptor (3) for holding a plurality of wafers (4) inside the double inner tube perpendicular to the axis of the double inner tube and spaced apart from each other. a reaction gas introduction pipe (5) for introducing a reaction gas into the upper inner side of the double inner pipe; The reaction tube has an exhaust pipe (6) that exhausts the air from the lower part of the reaction tube, and the double inner tube is a double tube with both ends open so that it can slide relative to each other, and each tube has a plurality of ventilation holes (7). ) is opened, and by sliding the double tubes relative to each other, the opening number passing through the double inner tube can be changed to control the amount of reaction gas flowing out from the double inner tube, and the opening number is set to This is achieved by a gas phase length device that is configured to adjust the amount of gas on the gas introduction side and less on the exhaust side.
上記構或は，二重内管の内管及び外管の通気孔（７）の
形状と数と配置を変えることにより可能となり，内管及
び外管の種々の相対位置で実際の戒膜実験を行い，膜厚
分布を求めて相対位置の最適化を行う。The above structure is made possible by changing the shape, number, and arrangement of the vent holes (7) in the inner tube and outer tube of the double inner tube, and can be used in actual membrane experiments at various relative positions of the inner tube and outer tube. Then, the film thickness distribution is determined and the relative position is optimized.
本発明は反応管内に二重内管を設け，ウェハを二重内管
内におき，反応ガスを二重内管内に導入し，二重内管の
外管及び内管には多数の通気孔を設け且つ通気孔の形状
と数と配置を変えて形成し．二重内管を相互にスライド
することにより二重内管を貫通する開口数を調整できる
ようにして，ウェハ周辺のガス量を実験的に減少させる
ことによリウェハ内膜厚分布を向上したものである。In the present invention, a double inner tube is provided in the reaction tube, a wafer is placed in the double inner tube, a reaction gas is introduced into the double inner tube, and a large number of ventilation holes are provided in the outer tube and the inner tube of the double inner tube. In addition, the shape, number, and arrangement of ventilation holes can be changed. By sliding the double inner tubes relative to each other, the aperture passing through the double inner tubes can be adjusted, and by experimentally reducing the amount of gas around the wafer, the film thickness distribution within the rewafer is improved. It is.
又，ウェハ間の膜厚分布を良くするために，二重内管は
反応ガスの導入側は開口数を多く，排気側に向かって開
口数は少なくできるように構成しておく。Further, in order to improve the film thickness distribution between wafers, the double inner tube is configured so that the number of openings is large on the reaction gas introduction side, and the number of openings is reduced toward the exhaust side.
〔実施例］ 第１図は本発明の一実施例による装置の斜視図である。〔Example] FIG. 1 is a perspective view of an apparatus according to an embodiment of the invention.
従来の減圧気相成長装置の反応管１内に二重内管２Ａ，
２Ｂを設け，二重内管内にウェハ４を複数枚内管の内
外を排気して反応管内の反応ガス圧を所定の値に保って
ウェハ４上に或膜する。A double inner tube 2A is installed in the reaction tube 1 of the conventional reduced pressure vapor phase growth apparatus.
2B, a plurality of wafers 4 are placed in a double inner tube, and a film is formed on the wafers 4 by evacuating the inside and outside of the inner tube to maintain the reaction gas pressure in the reaction tube at a predetermined value.
二重内管はそれぞれ多数の通気孔７が開けられており，
相互にスライドすることにより二重内管の開口（貫通孔
）の数が調整できるようにしている。Each of the double inner tubes has a large number of ventilation holes 7,
By sliding relative to each other, the number of openings (through holes) in the double inner tube can be adjusted.
二重内管の開口は上記の調整後．反応ガス導入側は多く
，排気側は少なくなるようする。The opening of the double inner tube is adjusted as above. The amount of reaction gas should be increased on the inlet side and less on the exhaust side.
反応管Ｉは石英からなり，ウェハ４は石英製のサセプタ
３に保持され，反応管ｌの外部より抵抗加熱炉で加熱さ
れる。The reaction tube I is made of quartz, and the wafer 4 is held in a susceptor 3 made of quartz and heated from the outside of the reaction tube I in a resistance heating furnace.
或いは，ウェハ４は高周波加熱が可能な材料でできたサ
セプタ３上に置かれ，反応管の外側から高周波加熱され
る。Alternatively, the wafer 4 is placed on a susceptor 3 made of a material capable of high-frequency heating, and is high-frequency heated from outside the reaction tube.
又，二重内管は石英で作製される。Also, the double inner tube is made of quartz.
第２図は実施例の装置内の反応ガスの流れを説明する断
面図である。FIG. 2 is a sectional view illustrating the flow of reaction gas within the apparatus of the example.
図は反応ガスの流れの一例を示し，二重内管内に導入さ
れた反応ガスは矢印のようにウェハ中央部にもゆきわた
り，ガス流は二重内管の内側の管と外側の管の両方を貫
通する孔を通って二重内管と反応管の間隙を通って排気
される系統と，二重内管内のウェハ周辺の間隙を通って
排気される系統に分割され，各部の流量を貫通孔の開口
位置を調節して実験的に分布が均一になるように決定す
る。The figure shows an example of the flow of reaction gas. The reaction gas introduced into the double inner tube also spreads to the center of the wafer as shown by the arrow, and the gas flow flows between the inner tube and the outer tube of the double inner tube. The system is divided into two systems: one system that exhausts air through the gap between the double inner tube and the reaction tube through a hole that penetrates both, and the other system that exhausts air through the gap around the wafer in the double inner tube. The opening positions of the through holes are adjusted to experimentally determine the distribution to be uniform.
第３図は実施例と従来例のウェハ内膜厚分布を示す図で
ある。FIG. 3 is a diagram showing the intra-wafer film thickness distribution of the embodiment and the conventional example.
図は，６インチウェハを５０枚同時に或膜したときのウ
ェハ内膜厚分布を示し，（１）は実施例，（２）は従来
例である。The figure shows the film thickness distribution within the wafer when 50 6-inch wafers are coated at the same time, and (1) is the example, and (2) is the conventional example.
次に，二重内管の外管と内管の通気孔の配置の一例を第
６図に示す。Next, FIG. 6 shows an example of the arrangement of the vent holes in the outer and inner tubes of a double inner tube.
第６図（１）， （２）は二重内管の外管と内管の通気
孔の配置例を示す展開図である。FIGS. 6(1) and 6(2) are developed views showing examples of the arrangement of vent holes in the outer tube and inner tube of a double inner tube.
図は簡明のために，ウェハ１２枚を４０ｍｍピッチで保
持する場合に対応する二重内管の展開図を示している。For the sake of clarity, the figure shows a developed view of the double inner tube corresponding to the case where 12 wafers are held at a pitch of 40 mm.
第６図（１）は内管の展開図で，通気孔はすべて５ｍｍ
φの丸孔でガス流方向に４０ｍｍピッチで配置され，ガ
スの上流側（図の上側）より下流側に向かって３段階で
通気孔の数を増やしている。Figure 6 (1) is a developed view of the inner tube, and all ventilation holes are 5 mm.
The holes are round holes with a diameter of φ and are arranged at a pitch of 40 mm in the gas flow direction, and the number of ventilation holes is increased in three stages from the upstream side (upper side of the figure) to the downstream side of the gas.
第ｌ段階は円周方向に９０１ピッチ，第２段階は円周方
向に５７１ピッチ，第３段階は円周方向に４０ｍｍピッ
チとした。The first stage had a pitch of 901 in the circumferential direction, the second stage had a pitch of 571 in the circumferential direction, and the third stage had a pitch of 40 mm in the circumferential direction.
一方，第６図（２）は外管の展開図で，通気孔はすべて
５ ｍｍ Ｘ ４０ｍｍの楕円孔でガス流方向に４０ｎ
ｕａビッチで配置され，円周方向には９０ｍｍピッチで
ガスの上流側より下流側に向かって均等に配置されてい
る。On the other hand, Figure 6 (2) is a developed view of the outer tube, and all ventilation holes are 5 mm x 40 mm oval holes with a diameter of 40 nm in the gas flow direction.
They are arranged in a ua pitch, and are evenly spaced in the circumferential direction at a pitch of 90 mm from the upstream side to the downstream side of the gas.
ここで，通気孔は内管も外管もｌ列おきに千鳥に配置さ
れている。Here, the ventilation holes are arranged in a staggered manner in every l row in both the inner tube and the outer tube.
以上の孔配置により，内管と外管をスライドすることに
より，上記各段階の二重内管の開口数が調節でき，且つ
下流側の開口数を上流側より少なくすることができる。With the above hole arrangement, by sliding the inner tube and the outer tube, the opening number of the double inner tube at each stage can be adjusted, and the opening number on the downstream side can be made smaller than on the upstream side.
実施例では二重内管の開口数を調節したが．この代わり
に開口面積を調節しても同様の効果が得られる。In the example, the opening aperture of the double inner tube was adjusted. A similar effect can be obtained by adjusting the opening area instead.
以上説明したように本発明によれば，ウェハ周辺の膜厚
が所望値より厚くならないようにしてウェハ内の膜厚分
布を良＜シ，製造歩留を向上することができた。As explained above, according to the present invention, it is possible to prevent the film thickness around the wafer from becoming thicker than a desired value, thereby improving the film thickness distribution within the wafer and improving the manufacturing yield.
第■図は本発明の一実施例による装置の斜視図．第２図
は実施例の装置内の反応ガスの流れを説明する断面図
第３図は実施例と従来例のウェハ内膜厚分布を示す図．
第４図は従来例による装置の斜視図，
第５図は従来装置内の反応ガスの流れを説明する断面図
，
第６図（１）， （２）は二重内管の外管と内管の通気
孔の配置例を示す展開図である。
図において，
１は反応管，
２，３は二重内管，
４はウェハ
５ば反応ガス導入管，
６は排気管
７は通気孔
Ｋ確例の＃ｆ慢図
第１図
ウェハの直径り向の顕岨
朕厚カ弔
第３図
従来例の斜視図
弟４図
二璽内管の通乳孔の配置例と示す康開図第６図Figure 3 is a perspective view of an apparatus according to an embodiment of the present invention. FIG. 2 is a cross-sectional diagram illustrating the flow of reactant gas in the apparatus of the embodiment. FIG. 3 is a diagram illustrating the film thickness distribution within the wafer of the embodiment and the conventional example. Figure 4 is a perspective view of a conventional device, Figure 5 is a sectional view explaining the flow of reactant gas in the conventional device, and Figures 6 (1) and (2) are the outer and inner tubes of the double inner tube. FIG. 3 is a developed view showing an example of arrangement of vent holes in a pipe. In the figure, 1 is a reaction tube, 2 and 3 are double inner tubes, 4 is a wafer 5 is a reaction gas inlet tube, 6 is an exhaust pipe 7 is a ventilation hole K, and the #f arrogance diagram is a typical example. Fig. 3: Perspective view of the conventional example; Fig. 4: Diagram showing an example of the arrangement of the milk passage holes in the inner tube; Fig. 6:
Claims (1)
持された二重内管（２Ａ）、（２Ｂ）と、該二重内管の
内側に複数枚のウェハ（４）を該二重内管の軸に垂直に
且つ相互に間隔を開けて保持するサセプタ（３）と、該
二重内管の上部内側に反応ガスを導入する反応ガス導入
管（５）と、該反応管の下部より排気する排気管（６）
とを有し、 該二重内管は相互にスライド可能な両端開放の二重の管
であって、それぞれの管に複数の通気孔（７）が開口さ
れ、二重の管を相互にスライドすることにより該二重内
管を貫通する開口数を変化させて該二重内管からの反応
ガス流出量を制御でき且つ該開口数は反応ガス導入側は
多く排気側が少なく調節できるように構成されているこ
とを特徴とする気相成長装置。[Claims] A reaction tube (1), double inner tubes (2A) and (2B) held within the reaction tube substantially concentrically with the reaction tube, and a plurality of tubes inside the double inner tube. a susceptor (3) for holding wafers (4) perpendicular to the axis of the double inner tube and spaced apart from each other, and a reaction gas introduction tube (3) for introducing a reaction gas into the upper inner side of the double inner tube 5) and an exhaust pipe (6) for exhausting air from the bottom of the reaction tube.
The double inner tube is a double tube with both ends open so that it can be slid relative to each other, and each tube has a plurality of vent holes (7), and the double inner tube is slidable relative to each other. By changing the number of openings passing through the double inner tube, the amount of reaction gas flowing out from the double inner tube can be controlled, and the number of openings can be adjusted to be larger on the reaction gas introduction side and smaller on the exhaust side. A vapor phase growth apparatus characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30876289A JP2841583B2 (en) | 1989-11-28 | 1989-11-28 | Vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30876289A JP2841583B2 (en) | 1989-11-28 | 1989-11-28 | Vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03169008A true JPH03169008A (en) | 1991-07-22 |
| JP2841583B2 JP2841583B2 (en) | 1998-12-24 |
Family
ID=17984992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30876289A Expired - Fee Related JP2841583B2 (en) | 1989-11-28 | 1989-11-28 | Vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2841583B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009043983A (en) * | 2007-08-09 | 2009-02-26 | Shin Etsu Handotai Co Ltd | Method of manufacturing high-luminance light-emitting diode |
| CN107815667A (en) * | 2016-09-13 | 2018-03-20 | 东京毅力科创株式会社 | Substrate board treatment |
| JP2018148099A (en) * | 2017-03-07 | 2018-09-20 | 東京エレクトロン株式会社 | Substrate processing apparatus |
-
1989
- 1989-11-28 JP JP30876289A patent/JP2841583B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009043983A (en) * | 2007-08-09 | 2009-02-26 | Shin Etsu Handotai Co Ltd | Method of manufacturing high-luminance light-emitting diode |
| CN107815667A (en) * | 2016-09-13 | 2018-03-20 | 东京毅力科创株式会社 | Substrate board treatment |
| JP2018046114A (en) * | 2016-09-13 | 2018-03-22 | 東京エレクトロン株式会社 | Substrate processing apparatus |
| CN112962084A (en) * | 2016-09-13 | 2021-06-15 | 东京毅力科创株式会社 | Substrate processing apparatus |
| JP2018148099A (en) * | 2017-03-07 | 2018-09-20 | 東京エレクトロン株式会社 | Substrate processing apparatus |
| CN108573900A (en) * | 2017-03-07 | 2018-09-25 | 东京毅力科创株式会社 | Substrate board treatment |
| US11208721B2 (en) | 2017-03-07 | 2021-12-28 | Tokyo Electron Limited | Substrate processing apparatus |
| CN108573900B (en) * | 2017-03-07 | 2023-10-20 | 东京毅力科创株式会社 | Substrate processing apparatus |
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| Publication number | Publication date |
|---|---|
| JP2841583B2 (en) | 1998-12-24 |
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