JPH0316116A - Mask structure for x-ray lithography and x-ray exposure using mask structure - Google Patents
Mask structure for x-ray lithography and x-ray exposure using mask structureInfo
- Publication number
- JPH0316116A JPH0316116A JP2047238A JP4723890A JPH0316116A JP H0316116 A JPH0316116 A JP H0316116A JP 2047238 A JP2047238 A JP 2047238A JP 4723890 A JP4723890 A JP 4723890A JP H0316116 A JPH0316116 A JP H0316116A
- Authority
- JP
- Japan
- Prior art keywords
- film
- ray
- mask structure
- nitrogen
- rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001015 X-ray lithography Methods 0.000 title claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 21
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- 239000002356 single layer Substances 0.000 claims abstract description 5
- 239000006096 absorbing agent Substances 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 11
- 229920001721 polyimide Polymers 0.000 abstract description 21
- 239000004642 Polyimide Substances 0.000 abstract description 8
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 238000012546 transfer Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000002250 absorbent Substances 0.000 abstract 6
- 230000002745 absorbent Effects 0.000 abstract 6
- 230000001464 adherent effect Effects 0.000 abstract 2
- 230000006378 damage Effects 0.000 abstract 2
- 239000010408 film Substances 0.000 description 82
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 34
- 239000010703 silicon Substances 0.000 description 34
- 229910052710 silicon Inorganic materials 0.000 description 34
- 235000012431 wafers Nutrition 0.000 description 29
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 27
- 229910052721 tungsten Inorganic materials 0.000 description 25
- 239000010937 tungsten Substances 0.000 description 24
- 239000007789 gas Substances 0.000 description 22
- -1 polyparaxylylene Polymers 0.000 description 21
- 239000012528 membrane Substances 0.000 description 16
- 239000010410 layer Substances 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- 229910001385 heavy metal Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 5
- 238000000992 sputter etching Methods 0.000 description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 231100000812 repeated exposure Toxicity 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野〉
本発明はＸ線リソグラフィー用マスク構造体及びそれを
用いたＸ線露光方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a mask structure for X-ray lithography and an X-ray exposure method using the same.
（従来の技術）
Ｘ線リソグラフィーは、Ｘ線固有の高透過率（低吸収）
及び短波長等の性質に基づき、これ迄の可視光や紫外光
によるリソグラフィーより優れた多くの点を持っており
、サブミクロンリソグラフィーの有力な手段として注目
されつつある。(Conventional technology) X-ray lithography uses high transmittance (low absorption) unique to X-rays.
It has many advantages over conventional visible light and ultraviolet light lithography based on its properties such as light and short wavelength, and is attracting attention as an effective means of submicron lithography.
しかしながら、Ｘ線源のパワー不足、レジストの低感度
、アライメントの困難さ、マスク材料の選定及び加工方
法の困難さ等から、生産性が低く、コストが高いと欠点
があり、実用化が遅れている。However, there are drawbacks such as low productivity and high cost due to insufficient power of the X-ray source, low sensitivity of the resist, difficulty in alignment, difficulty in selecting mask materials and processing methods, etc., and practical application has been delayed. There is.
その中で，Ｘ線リソグラフィー用マスクを取りあげて見
ると、可視光及び紫外光リソグラフィーでは、マスク材
保持体（即ち光線透過体）としてガラス板及び石英板が
利用されてきたが、Ｘ線リソグラフィーにおいては、利
用出来る光線の波長が１入〜２００人とされており、こ
れ迄のガラス板や石英板ではＸ線波長域での吸収が大き
く、且つ厚さも１ｍｍ〜２ｍｍと厚くせざるを得ない為
、Ｘ線を充分に透過させないので，これらはＸ線リソグ
ラフィー用マスク構造体のＸ線透過膜の材料としては不
適である。Among them, when looking at masks for X-ray lithography, in visible light and ultraviolet light lithography, glass plates and quartz plates have been used as mask material holders (i.e., light transmitting bodies), but in X-ray lithography, It is said that the wavelength of light that can be used is 1 to 200 people, and conventional glass plates and quartz plates have large absorption in the X-ray wavelength range and have to be thick, 1 mm to 2 mm. Therefore, these materials are not suitable as materials for the X-ray transparent film of the mask structure for X-ray lithography because they do not sufficiently transmit X-rays.
Ｘ線透過率は一般に物質の密度に依存する為、Ｘ線透過
膜の材料として、密度の低い無機物や有機物が検討され
つつある。この様な材料としては、例えば、ベリリウム
（Ｂｅ） 、チタン（Ｔｉ）、硅素（Ｓｔ） ．硼素（
Ｂ）等の単体及びそれらの化合物等の無機物又はポリイ
ミド、ボリアミド、ポリエステル、ポリパラキシリレン
等の有機物が挙げられる。Since X-ray transmittance generally depends on the density of a substance, low-density inorganic and organic materials are being considered as materials for X-ray transparent membranes. Examples of such materials include beryllium (Be), titanium (Ti), silicon (St), etc. boron(
Examples include inorganic substances such as simple substances such as B) and their compounds, and organic substances such as polyimide, polyamide, polyester, and polyparaxylylene.
これらの物質をＸ線透過膜の材料として実際に用いる為
には、Ｘ線透過量を出来るだけ大きくする為に薄膜化す
ることが必要であり、無機物の場合で数μｍ以下、有機
物の場合で数十μｍ以下の厚さに形成することが要求さ
れている。In order to actually use these substances as materials for X-ray transmission membranes, it is necessary to make them thin in order to maximize the amount of X-ray transmission. It is required that the thickness be several tens of micrometers or less.
この為、例えば、無機物薄膜及びその複合膜からなるＸ
線透過膜の形成にあたっては、平面性の優れたシリコン
ウエハー上に蒸着等によって窒化硅素、酸化硅素、炭化
硅素等の薄膜を形成した後に、シリコンウェハーをバッ
クエッチングによって除去する方法が提案されている。For this reason, for example,
In forming a line-transmitting film, a method has been proposed in which a thin film of silicon nitride, silicon oxide, silicon carbide, etc. is formed by vapor deposition on a silicon wafer with excellent flatness, and then the silicon wafer is removed by back etching. .
尚、以上の様なＸ線透過膜上に保持されるＸ線リソグラ
フィー用マスク材（即ちＸ線吸収体）としては、一般に
密度の高い物質、例えば、金、白金、タングステン、銅
、ニッケル及びそれらを含む化合物等の薄膜が使用され
ている。特に、０．５μｍ〜１μｍ厚の薄膜からなるも
のが好ましく使用されている。In addition, as the mask material for X-ray lithography (i.e., X-ray absorber) held on the above-mentioned X-ray transparent film, materials with high density are generally used, such as gold, platinum, tungsten, copper, nickel, and the like. Thin films of compounds containing In particular, a thin film having a thickness of 0.5 μm to 1 μm is preferably used.
この様なＸ線吸収体は、例えば、上記Ｘ線透過膜上に一
様に上記高密度物質の薄膜を形戊した後、レジストを塗
布し、該レジストに電子ビーム、光等により所望のパタ
ーン描画を行ない、しかる後にエッチング等の手段を用
いて所望のパターンに作成される。Such an X-ray absorber can be manufactured, for example, by uniformly forming a thin film of the high-density material on the X-ray transmissive film, applying a resist, and then forming a desired pattern on the resist using an electron beam, light, etc. Drawing is performed, and then a desired pattern is created using means such as etching.
（発明が解決しようとしている問題点）近年、Ｘ線リソ
グラフィー用の線源として、ＳＯＲ光が注目されている
。このＳＯＲ光は、従来の電子衝撃型Ｘ緯源から発生す
る特性Ｘ線に比べて、使用する波長の幅も広く且つパワ
ーも桁違いに大きい為、Ｘ線透過膜の熱安定性が大きな
問題となっている。(Problems to be Solved by the Invention) In recent years, SOR light has attracted attention as a radiation source for X-ray lithography. This SOR light uses a wider range of wavelengths and an order of magnitude greater power than the characteristic X-rays generated from conventional electron impact type X-latitudinal sources, so the thermal stability of the X-ray transmission film is a major problem. It becomes.
Ｘ線透過膜にＸ線が照射されると、一部のＸ線がＸ線透
過膜に吸収され、温度の上昇を引き起す。この時、Ｘ線
透過膜の熱膨張率が大きい場合、Ｘ線吸収体との位置づ
れを引き起す。又、更に熱伝導率が低い場合にはＸ線透
過膜の温度上昇がより大きくなる。When the X-ray transparent membrane is irradiated with X-rays, some of the X-rays are absorbed by the X-ray transparent membrane, causing a rise in temperature. At this time, if the coefficient of thermal expansion of the X-ray transmissive membrane is large, it causes misalignment with the X-ray absorber. Furthermore, when the thermal conductivity is lower, the temperature rise of the X-ray transmitting film becomes larger.
一方、近年、Ｘ線吸収体に対してはより一層の微細パタ
ーン化が要求されており、又、パターンの高アスベクト
比化は必須となっている。On the other hand, in recent years, even finer patterns have been required for X-ray absorbers, and it has become essential to increase the aspect ratio of the patterns.
しかしながら、高アスペクト比化には、ｘ線吸収体とＸ
線透過膜との高い接着性が必要となるが、現在のところ
十分な接着性を６つらのはなく、パターンの高アスペク
ト比化において大きな問題となっている。However, in order to achieve a high aspect ratio,
High adhesion with the light-transmitting film is required, but there is currently no sufficient adhesion, which is a major problem in increasing the aspect ratio of patterns.
又、Ｘ線透過膜上にＸ線吸収体をパターン形成した後、
−ＩＩにその上面をポリイミド等の有機膜で覆う。これ
はＸ線吸収体のパターンの保護とＸ線吸収体からの二次
電子の飛散を防止する為である。In addition, after patterning the X-ray absorber on the X-ray transparent film,
-II, its upper surface is covered with an organic film such as polyimide. This is to protect the pattern of the X-ray absorber and to prevent secondary electrons from scattering from the X-ray absorber.
しかしながら、従来この保護膜形成時に応力が発生し、
パターンが｛ｆ１１壊するという問題があった。However, conventionally, stress occurs when forming this protective film,
There was a problem that the pattern broke {f11.
又、従来、Ｘ線リソグラフィーの分野ではパターン線幅
ハーフミクロンレベルの高解像性が要求されているが、
この高解像性が不良となる最大の原因は、Ｘ線マスク構
造体に由来することが多く、Ｘ線マスク構造体自体の次
の様な問題に基づいている。Furthermore, in the field of X-ray lithography, high resolution with a pattern line width of half a micron has traditionally been required.
The main cause of poor high resolution often originates from the X-ray mask structure, and is based on the following problems with the X-ray mask structure itself.
（１）構成材料に由来するＸ線透過膜のＸ線透過性の悪
化の問題、
（２）内部応力に由来するＸ線透過膜の歪みの問題、
（３）内部応力に由来するＸ線吸収体の歪みの問題、
（４）Ｘ線透過膜とＸ線吸収体の接着性の問題。(1) The problem of deterioration of the X-ray transparency of the X-ray transparent membrane due to the constituent materials, (2) The problem of distortion of the X-ray transparent membrane due to internal stress, (3) The problem of X-ray absorption due to internal stress (4) Problems with the adhesion between the X-ray transparent membrane and the X-ray absorber.
上記問題点を解決する為に、これまで種々の技術改良が
為されてきており、例えば、米国特許第４，６７７．０
４２号明細書には，Ｘ線透過膜として窒化アルミニウム
を、Ｘ線吸収体としてタングステンやタンタル等の重金
属を用いたＸ線マスク構造体とすることにより、とりわ
け上記（１）の問題を改善することが記載されており、
又、特開昭６ ３ − ７ ６．３ ２ ５号及び同６
３−２３２４２５号公報には、Ｘ線透過膜として窒化シ
リコン、酸化シリコン又は窒化硼素を、Ｘ線吸収体とし
てタングステンの窒化物、タンタルの窒化物又はチタン
ータングステンの窒化物を用いたＸｌｌｉマスク構造体
とすることにより、とりわけ上記（３）及び（４）の問
題を改善することが記載されている。In order to solve the above problems, various technical improvements have been made so far, such as U.S. Patent No. 4,677.0.
Specification No. 42 specifically states that the above problem (1) is improved by using an X-ray mask structure using aluminum nitride as an X-ray transparent film and heavy metals such as tungsten or tantalum as an X-ray absorber. It is stated that
Also, JP-A-63-76.325 and JP-A No. 6
3-232425 discloses an Xlli mask structure using silicon nitride, silicon oxide, or boron nitride as an X-ray transparent film and tungsten nitride, tantalum nitride, or titanium-tungsten nitride as an X-ray absorber. It is described that the above problems (3) and (4) can be improved by using a body as a body.
しかしながら、Ｘ線リソグラフィーの実用面においては
、上記先行技術で開示されたＸ線ｉスク構造体であって
も、以下の様な新たな問題点を生じている．
即ち、Ｘ線リソグラフィーの実用面においては、
（１）同じＸ線マスク構造体を用いて数千回或いは数万
回にも及ぶパターン露光を行うのが通常であり、かよう
な複数回のパターン露光の繰り返しによって、Ｘ線マス
ク構造体は経時的に歪みを生じ、パターンの解像度が低
下してゆく。However, in the practical aspect of X-ray lithography, even the X-ray i-sk structure disclosed in the above-mentioned prior art has the following new problems. That is, in the practical aspect of X-ray lithography, (1) it is normal to perform pattern exposure thousands or tens of thousands of times using the same X-ray mask structure; Due to repeated exposures, the X-ray mask structure becomes distorted over time, reducing the resolution of the pattern.
（２）露光時のＸ線の減衰防止の為、Ｘ！！マスク構造
体を減圧下で使用する場合が多いが、被露光部材（ウエ
ハー）の装置への着脱時に生じる圧力変動の繰り返しに
よっても、Ｘ線マスク構造体は経時的に歪みを生じ、パ
ターンの解像度が低下してゆく。(2) To prevent X-ray attenuation during exposure, X! ! Although the mask structure is often used under reduced pressure, the X-ray mask structure may become distorted over time due to repeated pressure fluctuations that occur when the exposed member (wafer) is attached to and detached from the equipment, resulting in reduced pattern resolution. is decreasing.
等のＸ線マスク構造体の耐久性の点で不満足であった。The durability of the X-ray mask structure was unsatisfactory.
従って本発明の目的は、上記問題点を解決したＸ線リソ
グラフィー用マスク構造体を提供することである．
更に本発明の目的は、上記マスク構造体を用いた高精度
、高解像度のＸ線露光方法を提供することにある。Therefore, an object of the present invention is to provide a mask structure for X-ray lithography that solves the above problems. A further object of the present invention is to provide a high-precision, high-resolution X-ray exposure method using the above mask structure.
（問題点を解決する為の手段） 上記目的は以下の本発明によって達成される。(Means for solving problems) The above objects are achieved by the present invention as described below.
即ち、本発明は、アルミニウム及び窒素を主成分とする
単層膜又は当該膜を少なくとも含む積層膜からなるＸ線
透過膜と、該膜上に保持された金属及び窒素を主成分と
するＸ線吸収体と、上記Ｘ線透過膜を保持する保持枠と
を有することを特徴とするＸ線リソグラフィー用マスク
構造体、及び上記Ｘ線マスク構造体を通してＸＳ＊をＸ
線被露光材に露光することを特徴とするＸ線露光方法で
ある。That is, the present invention provides an X-ray transmitting film consisting of a single layer film mainly composed of aluminum and nitrogen or a laminated film containing at least the film, and an X-ray transmitting film mainly composed of metal and nitrogen held on the film. A mask structure for X-ray lithography characterized by having an absorber and a holding frame for holding the above-mentioned X-ray transmissive film, and
This is an X-ray exposure method characterized by exposing a material to be exposed to radiation.
（作 用）
アルミニウム及び窒素を主成分とするＸ線透過膜は低熱
膨張性であり、しかも高熱伝導性を有する。例えば、窒
化アルミニウム（ＡＩ−Ｎ）は熱膨張係数４− ３ｐｐ
ｍ／’Ｃ及び熱伝導率２６０Ｗ／ｍ・κを示す。(Function) The X-ray transparent membrane whose main components are aluminum and nitrogen has low thermal expansion and high thermal conductivity. For example, aluminum nitride (AI-N) has a thermal expansion coefficient of 4-3pp.
m/'C and thermal conductivity of 260 W/m·κ.
この熱膨張係数は一般に焼き付け基板として好適に用い
られるシリコンウェハーとほぼ同じ値であり、熱伝導率
はＸ線透過膜としてよく使用される窒化硅素（１７〜３
０Ｗ／ｍ−Ｋｌに比べても格段によく，ｘ線吸収による
温度上昇を防止することが出来る。従って極めて高精度
のパターン焼き付けが可能となる。This coefficient of thermal expansion is approximately the same as that of silicon wafers, which are generally used suitably as baking substrates, and the thermal conductivity is that of silicon nitride (17 to 3
It is much better than 0 W/m-Kl, and can prevent temperature rise due to x-ray absorption. Therefore, it is possible to print patterns with extremely high precision.
一方、金属及び窒素を主成分とするＸ線吸収体は、上記
Ｘ線透過膜と高い接着性を示し、超微細な高アスペクト
比のパターン形成が可能となる。On the other hand, an X-ray absorber whose main components are metal and nitrogen exhibits high adhesion to the X-ray transparent film, making it possible to form ultra-fine patterns with high aspect ratios.
又、Ｘ線吸収体上にポリイミド等の保護膜（又は二次電
子散乱防止膜）を形成する際の応力によるパターンの倒
壊も防止することが出来る。Furthermore, it is possible to prevent the pattern from collapsing due to stress when forming a protective film (or secondary electron scattering prevention film) such as polyimide on the X-ray absorber.
更に本発明のＸ線マスク構造体は、とりわけ実用上数千
回或は数万回にも及ぶＸ線照射の繰り返しによるＸ線マ
スク構造体全体の膨脹収縮及び同様に数千回或は数万回
にも及ぶ圧力変動の繰り返しによるＸ線透過膜、ｘ！ｌ
ｉ！吸収体の振動に対して十分な耐久性能を維持するこ
とが出来る。この理由については明瞭な説明が出来る程
明らかではないが、本発明者等の推測によれば、
ａ》アルミニウム及び窒素を主成分とするＸ線透過膜は
先に述べた如く低熱膨張性であり、しかも高熱伝導性を
有すること。Furthermore, the X-ray mask structure of the present invention is particularly suitable for expansion and contraction of the entire X-ray mask structure due to repeated X-ray irradiation thousands or tens of thousands of times in practice, and also X-ray transparent membrane created by repeated pressure fluctuations, x! l
i! Sufficient durability against vibration of the absorber can be maintained. The reason for this is not clear enough to provide a clear explanation, but according to the inventors' speculations, a) the X-ray transparent film whose main components are aluminum and nitrogen has low thermal expansion as mentioned above; , and have high thermal conductivity.
ｂ〉窒化アルミニウム（Ｘ線透過膜）と重金属の窒化物
（Ｘ線吸収体）とが、両者の接着性の点で最良の組み合
わせである。b> Aluminum nitride (X-ray transparent membrane) and heavy metal nitride (X-ray absorber) are the best combination in terms of their adhesive properties.
Ｃ）窒化アルミニウム（Ｘ線透過膜）と重金属の窒化物
（Ｘ線吸収体）との応力バランスが最良である．
等の事が起因しているものと考えられる。C) The stress balance between aluminum nitride (X-ray transparent membrane) and heavy metal nitride (X-ray absorber) is optimal. This is thought to be caused by the following.
（好ましい実施態様）
以下に図面に例示する実施態様により本発明のＸ線マス
ク構造体について更に詳しく説明する。(Preferred Embodiments) The X-ray mask structure of the present invention will be explained in more detail below with reference to embodiments illustrated in the drawings.
第１図（ａ）〜（ｄ）は本発明のＸ線マスク構造体の構
成を示す断面図である。FIGS. 1(a) to 1(d) are cross-sectional views showing the structure of the X-ray mask structure of the present invention.
第１図（ａ）において、１は保持枠、２はＸ線透過膜、
３はＸ線吸収体である。In FIG. 1(a), 1 is a holding frame, 2 is an X-ray transparent membrane,
3 is an X-ray absorber.
先ず、Ｘ線透過膜２はアルミニウム及び窒素を主体とす
る化合物、即ち、窒化アルミニウムから構或されている
。好ましくはアルミニウム（Ａｌｌ／窒素（Ｎ）のモル
比（Ｎ／Ａｌｌは０．３〜１．５の範囲が好ましく、更
に好ましくは０．４〜１．０である。即ち、上記モル比
が１．５を越えるとＸ線の透過率が低下し、一方、０．
３未満では膜の内部応力の制御が困難となる。しかも０
．３〜１．５の範囲外では先に述べたＸ線マスク構造体
の実用的耐久性ち低下する。上記Ｘ線透過膜の厚みは通
常０．５μｍ〜・５μｍとされる．
又、Ｘ線吸収体３は、金属及び窒素を主成分とする化合
物、好ましくは重金属の窒化物から構成されてシ）る。First, the X-ray transmitting film 2 is made of a compound mainly composed of aluminum and nitrogen, that is, aluminum nitride. Preferably, the molar ratio of aluminum (All/nitrogen (N)) (N/All is preferably in the range of 0.3 to 1.5, more preferably 0.4 to 1.0. That is, the above molar ratio is 1 When the value exceeds .5, the transmittance of X-rays decreases;
If it is less than 3, it becomes difficult to control the internal stress of the film. And 0
．． Outside the range of 3 to 1.5, the above-mentioned practical durability of the X-ray mask structure decreases. The thickness of the above-mentioned X-ray transparent membrane is usually 0.5 μm to 5 μm. The X-ray absorber 3 is made of a compound containing metal and nitrogen as main components, preferably a heavy metal nitride.
重金属としては、Ｗ ， Ｔａ． Ｈｆ． Ｍｏ、Ｎｂ
． Ｚｒ， Ｎｉ， Ｔｉ． Ｒｈ％Ｇｅ． Ｇａ或は
これらの合金を用いることが出来るが、特にＴａ． Ｗ
． Ｈｆが好ましく用いられる。この時の重金属と窒素
とのモル比Ｘ（窒素／重金属）はＯ＜Ｘ＜１．０の範囲
が好ましく，更に好ましくはＯ．Ｏｆ＜ｘ＜０．５であ
る。即ち、ＸがＯでは膜の内部応力の制御が困難で、一
方、ｌを越えるとＸ線吸収の能力が低下するので好まし
くない。しかもこの範囲を外れると先に述べたＸ線マス
ク構造体の実用的耐久性ち低下する。Examples of heavy metals include W, Ta. Hf. Mo, Nb
．． Zr, Ni, Ti. Rh%Ge. Although Ga or an alloy thereof can be used, Ta. W
．． Hf is preferably used. At this time, the molar ratio X between heavy metal and nitrogen (nitrogen/heavy metal) is preferably in the range of O<X<1.0, more preferably O. Of<x<0.5. That is, when X is O, it is difficult to control the internal stress of the film, while when it exceeds 1, the X-ray absorption ability decreases, which is not preferable. Moreover, outside this range, the practical durability of the aforementioned X-ray mask structure decreases.
又、上記Ｘ線吸収体３の厚みは通常０．０２μｍ〜５μ
ｍとされる。尚、上記Ｘ線透過膜２とＸ線吸収体３とは
直接、接して積層されていることが先に述べた実用的耐
久性の点で好ましい。Further, the thickness of the X-ray absorber 3 is usually 0.02 μm to 5 μm.
It is assumed that m. Incidentally, it is preferable that the X-ray transmitting membrane 2 and the X-ray absorbing body 3 are laminated in direct contact with each other in terms of the practical durability mentioned above.
次に保持枠ｌは、上記Ｘ線透過膜２の周辺部を保持する
環状基板であり、通常シリコンウエハーが用いられ、更
にその外側をパイレックス、ガラス、チタン、チタン合
金等の材料で構成された補強枠で支持されたものであっ
てもよい。Next, the holding frame l is an annular substrate that holds the peripheral part of the X-ray transparent membrane 2, and is usually made of a silicon wafer, and the outside thereof is made of a material such as Pyrex, glass, titanium, or titanium alloy. It may be supported by a reinforcing frame.
又、本発明のＸ線マスク構造体は第１図（ｂ）〜（ｄ）
に示される如く、そのＸ線透過膜２が窒化アルミニウム
の層２ａと保護層２ｂとによって構或されていてもよい
。尚、この場合において′も窒化アルミニウムの層２ａ
とＸ線吸収体３とは直接、接して積層されていることが
先に述べた実用的耐久性の点で好ましい。Moreover, the X-ray mask structure of the present invention is shown in FIGS. 1(b) to (d).
As shown in FIG. 2, the X-ray transmitting film 2 may be composed of an aluminum nitride layer 2a and a protective layer 2b. In this case, ' is also the aluminum nitride layer 2a.
It is preferable that the X-ray absorber 3 and the X-ray absorber 3 are laminated in direct contact with each other from the viewpoint of practical durability mentioned above.
この保護層２ｂは先に述べた実用的耐久性を一層高める
機能を有し、ポリイミド、ボリアミド、ポリエステル、
ポリバラキシリレン等の有機物或はベリリウム、チタン
、硅素，硼素等の無機物を用いることが出来るが、好ま
しくは有機物である。又、その膜厚は０．５μｍ〜３μ
ｍとされることが好ましい。This protective layer 2b has the function of further increasing the practical durability mentioned above, and is made of polyimide, polyamide, polyester,
Organic substances such as polyvaraxylylene or inorganic substances such as beryllium, titanium, silicon, and boron can be used, but organic substances are preferable. Also, the film thickness is 0.5μm to 3μm.
It is preferable to set it as m.
以上本発明のＸ線マスク構造体について詳しく説明した
が、保持枠とＸ線透過膜との間には応力制御或はプロセ
ス用下地層が介在していてもよく，その作成方法は従来
公知の方法に準ずればよく特に限定されない。Although the X-ray mask structure of the present invention has been described in detail above, a stress control or process base layer may be interposed between the holding frame and the X-ray transparent film, and its production method may be any of the conventionally known methods. There are no particular limitations as long as the method is followed.
（実 施 例）
次に実施例及び比較例を挙げて本発明を更に具体的に説
明する。(Example) Next, the present invention will be explained in more detail by giving examples and comparative examples.
実施例１
全面に１μｍ厚の熱酸化膜（Ｓｉｎｓ） ２ ２の付い
たシリコンウエハー２１（第２図ａ）をスパッタリング
装置内にセットし、窒化アルミニウム（Ａｌ−Ｎ）ター
ゲット、アルゴン（＾ｒ）：窒素（Ｎ２） ＝５：１、
ガス圧０．ＯＩＴｏｒｒ、放電電力２００Ｗにて、２μ
ｍ厚の窒化アルミニウムｉｌｌ （Ｎ／Ａ１＝ｌ／ｌ）
２３を形或した（第２図ｂ）。Example 1 A silicon wafer 21 (Fig. 2a) with a 1 μm thick thermal oxide film (Sins) 2 on the entire surface was set in a sputtering apparatus, and an aluminum nitride (Al-N) target and argon (^r) were placed on the silicon wafer 21 (Fig. 2a). : Nitrogen (N2) = 5:1,
Gas pressure 0. OITorr, 2μ at discharge power 200W
m-thick aluminum nitride ill (N/A1=l/l)
23 (Figure 2b).
次に裏面の熱酸化膜２２（下地層〉をリング状に残す為
に、アビエゾンワックス（シェル化学社製）層２４を形
成し（第２図Ｃ）、これをレジスト層として、熱酸化膜
２２の中央部分を弗化アンモニウムと弗酸との混合液を
用いて除去した（第２図ｄ）。Next, in order to leave the thermal oxide film 22 (base layer) on the back side in a ring shape, an Aviezon wax (manufactured by Shell Chemical Co., Ltd.) layer 24 is formed (Fig. 2C), and this is used as a resist layer to form a thermal oxide film. The central portion of No. 22 was removed using a mixed solution of ammonium fluoride and hydrofluoric acid (Fig. 2 d).
その後、アビエゾンワックス２４をキシレンで取り去っ
た（第２図ｅ）。Thereafter, Abiezon Wax 24 was removed with xylene (Fig. 2e).
その後、水酸化カリウム（ＫＯＩ｛）水溶液にて、シリ
コンウエハー２１の中央部をエッチングし、熱酸化膜２
２を露出させた（第２図ｆ）。次にこの熱酸化膜２２を
ケミカルドライエッチングによりＣＦ４： ２ ０ＳＣ
ＣＭ、ガス圧： １．２Ｘ１０−’Ｔｏｒｒ、放電電力
６８０Ｗの条件下で除去した（第２図ｇ）。After that, the central part of the silicon wafer 21 is etched with a potassium hydroxide (KOI) aqueous solution, and the thermal oxide film 2 is etched.
2 was exposed (Figure 2 f). Next, this thermal oxide film 22 is CF4:20SC by chemical dry etching.
CM was removed under the conditions of gas pressure: 1.2×10-'Torr and discharge power of 680 W (Fig. 2g).
次に、表面の窒化アルミニウム膜２３をスパッタリング
装置内にセットし、タングステン（Ｗ）ターゲット、ア
ルゴン：窒素＝２：１、ガス圧０ ． ０ ２ Ｔｏｒ
ｒ，放電電力５００Ｗにて、窒化アルミニウム膜２３上
に０．７μｍ厚の窒化タングステン膜（Ｗ−Ｎ． Ｎ／
Ｗ＝１／ｌ） ２ ５を形成し、更に該膜２５上にポリ
イミド層２６をｌμｍの厚さに形成し、更にこの上にシ
リコン含有レジスト２７を０．２μｍの厚みに形成した
（第２図ｈ）。Next, the aluminum nitride film 23 on the surface is set in a sputtering device, and a tungsten (W) target, argon:nitrogen=2:1, and gas pressure 0. 0 2 Tor
r, at a discharge power of 500 W, a 0.7 μm thick tungsten nitride film (W-N.N/
W=1/l) 2 5 was formed, a polyimide layer 26 was formed on the film 25 to a thickness of 1 μm, and a silicon-containing resist 27 was further formed on this to a thickness of 0.2 μm (second Figure h).
次に、ＥＢ描画によりシリコン含有レジスト２７をバタ
ーニングし、０．２５μｍラインアンドスペースパター
ンを得た。続いてこのパターンを酸素ガスによるリアク
ティブイオンエッチングによりポリイミド膜に転写した
。Next, the silicon-containing resist 27 was patterned by EB drawing to obtain a 0.25 μm line-and-space pattern. Subsequently, this pattern was transferred to the polyimide film by reactive ion etching using oxygen gas.
更にこのパターンをマスクとして．窒化タングステン膜
２５をＣＦ． ＋ ０２ガスを用いたりアクティブイオ
ンエッチングで、ガス圧力１． ＯＰａ． ＲＦハ’７
−０． ２Ｗ／ｃｒｒ？の条件下でエッチングを行い、
窒化タングステン膜２５のパターン２８を形成し本発明
のＸ線マスク構造体を得た（第２図工）。Furthermore, use this pattern as a mask. The tungsten nitride film 25 is coated with CF. +02 gas or active ion etching at a gas pressure of 1. OPa. RF Ha'7
-0. 2W/crr? Etching is performed under the conditions of
A pattern 28 of a tungsten nitride film 25 was formed to obtain an X-ray mask structure of the present invention (see FIG. 2).
実施例２
シリコンウエハー２１の全面にＬＰＣＶＤ法を用いて、
２μｍ厚の窒化硅素膜２２を成膜した（第２図ａ）。Example 2 Using the LPCVD method on the entire surface of the silicon wafer 21,
A silicon nitride film 22 with a thickness of 2 μm was formed (FIG. 2a).
次に、このウエハー２１をＭＯＣＶＤ装置内にセットし
、ウェハー２１を５００℃に加熱しつつ、トリメチルア
ルミニウム（Ａｌ （ＣＨｓ） ３）を水素パブリング
し５ ０ ＳＣＣＭ、アンモニア（ＮＨｓ）ガスを１０
３ＣＣＭ流し、窒化アルミニウム膜（Ｎ／＾１＝０．９
／ｌ）２３を成膜した（第２図ｂ）。Next, this wafer 21 is set in an MOCVD apparatus, and while heating the wafer 21 to 500°C, trimethylaluminum (Al (CHs) 3) is hydrogen bubbled to 50 SCCM, and ammonia (NHs) gas is heated to 10
3CCM flow, aluminum nitride film (N/^1=0.9
/l) 23 was formed into a film (FIG. 2b).
次にリング状にネガレジスト層２ ４ （ＯＭＲ−８３
：東京応化社製）を形成し（第２図Ｃ）、それをレジ
スト層として弗化アンモニウムと弗酸との混合液を用い
て窒化硅素膜２２の中央を除去し（第２図ｄ）、専用剥
離７夜を用いてレジストを取り去った（第２図ｅ）。Next, a ring-shaped negative resist layer 2 4 (OMR-83
: manufactured by Tokyo Ohka Co., Ltd.) (FIG. 2C), and using it as a resist layer, the center of the silicon nitride film 22 is removed using a mixed solution of ammonium fluoride and hydrofluoric acid (FIG. 2D). The resist was removed using a special stripper (Figure 2e).
次に弗硝酸（弗酸と硝酸との混合物）でシリコーンウェ
ハー２１をバックエッチングした（第２図ｆ）。次に露
出した窒化硅素膜をケミカルドライエッチングにて、Ｃ
Ｆ４： ２ ０ＳＣＣＭ、ガス圧＝１．２Ｘ１０−’Ｔ
ｏｒｒ、放電電力６８０Ｗの条件下で除去した（第２図
ｇ）。Next, the silicone wafer 21 was back-etched with hydrofluoric acid (a mixture of hydrofluoric acid and nitric acid) (FIG. 2f). Next, the exposed silicon nitride film is chemically dry etched to remove C.
F4: 20SCCM, gas pressure = 1.2X10-'T
orr, and the discharge power was 680 W (Fig. 2g).
次にこの窒化アルミニウム膜をスパッタリング装置内に
セットし、タンタル（Ｔａ）ターゲット、アルゴン：窒
素＝ｌ；１、ガス圧０． Ｏ ＩＴｏｒｒ，放電電力５
００Ｗにて窒化アルミニウム膜２３上に０．８μｍ厚の
窒化タンタル（Ｔａ−Ｎ．Ｎ／Ｔａ＝１／１）膜２５を
形成した。Next, this aluminum nitride film was set in a sputtering device, using a tantalum (Ta) target, argon:nitrogen=l;1, gas pressure 0. O ITorr, discharge power 5
A tantalum nitride (Ta-N.N/Ta=1/1) film 25 with a thickness of 0.8 μm was formed on the aluminum nitride film 23 at 00W.
続いて、この窒化タンタル膜２５上にポリイミド膜２６
をｌμｍの厚みに形成し、更にこの土にシリコン含有レ
ジスト２７を０．２μｍの厚みに形成した（第２図ｈ）
。Subsequently, a polyimide film 26 is formed on this tantalum nitride film 25.
was formed to a thickness of 1 μm, and a silicon-containing resist 27 was further formed to a thickness of 0.2 μm on this soil (Fig. 2 h).
.
次にＥＢ描画によりシリコン含有レジスト２７をバター
ニングし、０．２５μｍラインアンドスペースパターン
を得た。続いてこのパターンを酸素ガスによるリアクテ
ィブイオンエッチングにより、ポリイミド膜に転写した
。更にこのパターンをマスクとして、窒化タンタル膜２
５を塩素ガスを用いたりアクティブイオンエッチングで
ガス圧力！．ＯＰａ，ＲＦバワー０．２Ｗ／ｃｒｒ？の
条件下でエッチングを行い、窒化タンタルのパターン２
８を形成し本発明のＸ線マスク構造体を得た（第２図ｉ
）ａ
実施例３
シリコンウェハー２１の全面に熱酸化法を用いて２μｍ
厚の酸化硅素２２を成膜したく第２図ａ〉。次にこのウ
ェハー２１を高周波ＭＯＣＶＤ装置内にセットし、ウエ
ハー２１を１，２００℃に加熱しつつ塩化アルミニウム
（ＡＩＣＩＳ）を水素パブリングし、ＩＯＯｓｃｃＭ、
アンモニアガスを１０３ＣＣＭ流し、３００Ｗの放電電
力で窒化アルミニウム膜（Ｎ／Ａ１＝０．９６／１１
２ ３を成膜した（第２図ｂ）．
次にリング状にネガレジスト２４（＾Ｚ−１１７０：ヘ
キスト社製）を形成し（第２図Ｃ）、それをレジスト層
として弗化アンモニウムと弗酸との混合液を用いて熱酸
化膜２２の中央を除去し（第２図ｄ）、専用剥離液を用
いてレジスト２４を取り去った（第２図ｅ）。Next, the silicon-containing resist 27 was patterned by EB drawing to obtain a 0.25 μm line and space pattern. Subsequently, this pattern was transferred to the polyimide film by reactive ion etching using oxygen gas. Furthermore, using this pattern as a mask, the tantalum nitride film 2 is
5. Gas pressure using chlorine gas or active ion etching! ．． OPa, RF power 0.2W/crr? The tantalum nitride pattern 2 was etched under the following conditions.
8 was formed to obtain the X-ray mask structure of the present invention (Fig. 2 i)
)a Example 3 The entire surface of the silicon wafer 21 is coated with a thickness of 2 μm using a thermal oxidation method.
In order to form a thick silicon oxide film 22, as shown in FIG. 2a. Next, this wafer 21 is set in a high frequency MOCVD apparatus, and aluminum chloride (AICIS) is hydrogen bubbled while heating the wafer 21 to 1,200°C.
Ammonia gas was flowed at 103 CCM, and an aluminum nitride film (N/A1=0.96/11
23 was deposited (Fig. 2b). Next, a ring-shaped negative resist 24 (Z-1170: manufactured by Hoechst) is formed (Fig. 2C), and this is used as a resist layer to form a thermal oxide film 22 using a mixed solution of ammonium fluoride and hydrofluoric acid. The center of the resist 24 was removed (FIG. 2 d), and the resist 24 was removed using a special stripping solution (FIG. 2 e).
次に水酸化カリウム（ＫＯＨ）水溶液にてシリコーンウ
エハー２１の中央部をエッチングした（第２図ｆ）。Next, the center portion of the silicone wafer 21 was etched using a potassium hydroxide (KOH) aqueous solution (FIG. 2f).
次にこの窒化アルミニウム膜をスパッタリング装置内に
セットし、タングステンＦＷ）ターゲット，アルゴン：
窒素＝２：１、ガス圧Ｏ、０２Ｔｏｒｒ、放電電力５０
０Ｗにて窒化アルミニウム膜２３上に０．８μｍ厚の窒
化タングステン膜（Ｎ／Ｗ二１／ｌ）２５を形成した。Next, this aluminum nitride film was set in a sputtering device, and a tungsten FW) target, argon:
Nitrogen = 2:1, gas pressure O, 02 Torr, discharge power 50
A 0.8 μm thick tungsten nitride film (N/W 21/l) 25 was formed on the aluminum nitride film 23 at 0W.
続いてこの窒化タングステン膜２５上にクロム（Ｃｒ）
層２６を５００人の厚みにＥＢ蒸着により形成し、更に
この上にポリメチルメタクリレート（ＰＭＭＡ）レジス
ト２７をｌＬＬｍの厚さに塗布形成した（第２図ｈ）．
次にＥＢ描画によりポリメチルメタクリレートレジスト
２７をバターニングし、０．２５μｍラインアンドスペ
ースパターンを得た。続いてこのポリメチルメタクリレ
ートパターンをマスクとして塩素ガスによるリアクティ
ブイオンエッチングにより、クロム層２６をエッチング
してパターン転写した。続いてこクロムパターンをマス
クとして、窒化タングステン１１９２５を六弗化硫黄（
ｓｐＪガスによるりアクティブイオンエッチングでバタ
ーニングし、続いて裏面よりケミカルドライエッチング
により酸化硅素を除去し、本発明のＸ線マスク構造体を
得た（第２図ｈ）。Next, chromium (Cr) is deposited on this tungsten nitride film 25.
A layer 26 was formed to a thickness of 500 mm by EB evaporation, and a polymethyl methacrylate (PMMA) resist 27 was coated thereon to a thickness of 1 LLm (FIG. 2h). Next, the polymethyl methacrylate resist 27 was patterned by EB drawing to obtain a 0.25 μm line and space pattern. Subsequently, using this polymethyl methacrylate pattern as a mask, the chromium layer 26 was etched by reactive ion etching using chlorine gas to transfer the pattern. Next, using the chrome pattern as a mask, tungsten nitride 11925 was coated with sulfur hexafluoride (
Buttering was performed by active ion etching using spJ gas, and then silicon oxide was removed from the back surface by chemical dry etching to obtain the X-ray mask structure of the present invention (FIG. 2h).
実施例４
実施例３の窒化タングステン膜に代えて窒化ハフニウム
膜を用いた以外は、実施例３と同様の方法で本発明のＸ
線マスク構造体を作成した。Example 4 The X of the present invention was prepared in the same manner as in Example 3 except that a hafnium nitride film was used in place of the tungsten nitride film in Example 3.
Created a line mask structure.
実施例５
シリコンウェハー３１（第３図ａ）３１をスパッタリン
グ装置内にセットし，窒化アルミニウム（Ａｌ−Ｎ）タ
ーゲット、Ａｒ：Ｎａ＝５ ： ｌ．ガス圧０．ＯＩＴ
ｏｒｒ、放電電力２００Ｗにて、２μｍ厚の窒化アルミ
ニウム（Ｎ／Ａ１＝１／１１膜３２を形成した（第３図
ｂ）。Example 5 A silicon wafer 31 (FIG. 3a) 31 was set in a sputtering apparatus, and an aluminum nitride (Al-N) target, Ar:Na=5:1. Gas pressure 0. OIT
orr and a discharge power of 200 W, a 2 μm thick aluminum nitride (N/A1=1/11 film 32) was formed (FIG. 3b).
次に表面の窒化アルミニウム膜３２にタングステンター
ゲット、Ａｒ：Ｎｔ＝２ ： １，ガス圧０ ． ０
２ Ｔｏｒｒ．放電電力５００Ｗの条件で、０．７μｍ
厚の窒化タングステン（■一Ｎ．Ｎ／Ｗ＝１／１）膜３
３を形成した。更に該膜３３上にポリイミド膜３４をｌ
μｍの厚さに形成し、更にこの上にシ？コン含有レジス
ト３５を０．２μｍの厚みに形成した（第３図Ｃ）。Next, a tungsten target, Ar:Nt=2:1, gas pressure 0. 0
2 Torr. 0.7μm under the condition of discharge power 500W
Thick tungsten nitride (■-N.N/W=1/1) film 3
3 was formed. Furthermore, a polyimide film 34 is formed on the film 33.
Formed to a thickness of μm, and then coated on top of it. A resist 35 containing silicon was formed to a thickness of 0.2 μm (FIG. 3C).
次に、ＥＢ描画によりシリコン含有レジスト３５をパタ
ーニングし、０．２５μｍラインアンドスペースパター
ンを得た。Next, the silicon-containing resist 35 was patterned by EB writing to obtain a 0.25 μm line-and-space pattern.
続いてこのパターンを酸素（０■）ガスによるリアクテ
ィブイオンエッチングによりポリイミド膜３４に転写し
た。Subsequently, this pattern was transferred to the polyimide film 34 by reactive ion etching using oxygen (0) gas.
更にこのパターンをマスクとして、窒化タングステンｌ
莫３３をＣＦ． ＋ Ｏ■ガスを用いたりアクティブイ
オンエッチングで、ガス圧力１、ＯＰａ．ＲＦバワー０
．２Ｗ／ｃｒｒ？の条件下でエッチングを行い、窒化タ
ングステン膜のパターン３６を形成した（第３図ｄ）。Furthermore, using this pattern as a mask, tungsten nitride l
Mo33 to CF. +O■ gas or active ion etching at a gas pressure of 1, OPa. RF power 0
．． 2W/crr? Etching was performed under these conditions to form a pattern 36 of tungsten nitride film (FIG. 3d).
その後、苛性カリ水溶漬にてシリコンウエハー３ｌの中
央部をエッチングして、第３図（ｅ）に示される本発明
のＸ線マスク構造体を得た。Thereafter, the central portion of the silicon wafer 3L was etched by dipping in caustic potassium water to obtain the X-ray mask structure of the present invention shown in FIG. 3(e).
実施例６
シリコンウエハー４１上に保護層としてのポリイミド膜
４２をｌμｍの厚さに形成した後（第４図ａ｝、スバッ
クリング装置内にセットし、窒化アルミニウム（Ａｔ−
Ｎ）ターゲット． Ａｒ：Ｎａ＝５ ：ｌ、ガス圧０．
ＯＩＴｏｒｒ、放電電力２００Ｗにて、２μｍ厚の窒化
アルミニウム（Ｎ／Ａｌ・１／ｌ）膜４３を形成した。Example 6 After forming a polyimide film 42 as a protective layer on a silicon wafer 41 to a thickness of 1 μm (FIG. 4a), the wafer was set in a sbuckling device, and aluminum nitride (At-
N) Target. Ar:Na=5:l, gas pressure 0.
An aluminum nitride (N/Al.1/l) film 43 with a thickness of 2 μm was formed at OITorr and a discharge power of 200 W.
次に表面の窒化アルミニウム膜４３をスパッタリング装
置内にセットし、タングステン（Ｗ）ターゲット、Ａｒ
：Ｎｓ＝２ ： １．ガス圧０． ０２Ｔｏｒｒ，放
電電力５００Ｗにて、窒化アルミニウム膜４３上に０．
７μｍ厚の窒化タングステン（Ｗ−Ｎ． Ｎ／Ｗ＝１／
１）膜４４を形成した。更に該膜４４上にポリイミド膜
４５を１μｍの厚さに形成し、更にこの上にシリコン含
有レジスト４６を０．２μｍの厚みに形成した（第４図
Ｃ）。Next, the aluminum nitride film 43 on the surface is set in a sputtering device, and a tungsten (W) target and an Ar
:Ns=2 :1. Gas pressure 0. 0.02 Torr and discharge power of 500 W on the aluminum nitride film 43.
7 μm thick tungsten nitride (W-N. N/W=1/
1) A film 44 was formed. Furthermore, a polyimide film 45 was formed on the film 44 to a thickness of 1 μm, and a silicon-containing resist 46 was further formed on this film to a thickness of 0.2 μm (FIG. 4C).
次に、ＥＢ描画によりシリコン含有レジスト４６をバタ
ーニングし、０．２５μｍラインアンドスペースパター
ンを得た。Next, the silicon-containing resist 46 was patterned by EB drawing to obtain a 0.25 μm line-and-space pattern.
続いてこのパターンを酸素（Ｏｆ）ガスによるリアクテ
ィブイオンエッチングによりポリイミド膜４５に転写し
た。Subsequently, this pattern was transferred to the polyimide film 45 by reactive ion etching using oxygen (Of) gas.
更にこのパターンをマスクとして、窒化タングステン膜
４４をｃＦ． ＋ Ｏｘガスを用いたりアクティブイオ
ンエッチングで、ガス圧力１． ＯＰａ． ＲＦパワー
０． ２Ｗ／ｅｒｒ？の条件下でエッチングを行い、窒
化タングステン膜のパターン４７を形成した（第４図ｄ
）。Furthermore, using this pattern as a mask, the tungsten nitride film 44 is coated with cF. + Using Ox gas or active ion etching, gas pressure 1. OPa. RF power 0. 2W/err? Etching was performed under the following conditions to form a pattern 47 of the tungsten nitride film (see Fig. 4d).
).
その後、水酸化カリウム水溶液にてシリコンウエハー４
１の中央部をエッチングして保護層としてのポリイミド
膜４２を有する第４図（ｅ）に示された本発明のＸ綿マ
スク構造体を得た。After that, silicon wafer 4 was heated with potassium hydroxide aqueous solution.
By etching the central part of the mask 1, an X-cotton mask structure of the present invention shown in FIG. 4(e) having a polyimide film 42 as a protective layer was obtained.
実施例７
実施例５で作成したＸ線マスク構造体に更にポリイミド
の保護膜を２μｍ厚で設け、第１図（ｂ）に示される本
発明のＸ線マスク構造体を得た。Example 7 The X-ray mask structure produced in Example 5 was further provided with a polyimide protective film having a thickness of 2 μm to obtain the X-ray mask structure of the present invention shown in FIG. 1(b).
実施例８
実施例５で作成したＸ線マスク構造体に更にポリイミド
の保護膜を１μｍ厚で設け、第１図（ｄ）に示される本
発明のＸ線マスク構造体を得た。Example 8 The X-ray mask structure prepared in Example 5 was further provided with a polyimide protective film having a thickness of 1 μm to obtain the X-ray mask structure of the present invention shown in FIG. 1(d).
比較例ｌ
実施例５において窒化タングステン膜の代わりにタング
ステン膜とした以外は実施例５と同様にｘ線マスク構造
体を作或した。Comparative Example 1 An x-ray mask structure was fabricated in the same manner as in Example 5 except that a tungsten film was used instead of the tungsten nitride film in Example 5.
比較例２
実施例５において窒化アルミニウム膜の代わりに窒化硅
素膜（Ｎ／ＳＬ＝１／１）とした以外は実施例５と同様
にＸ線マスク構造体を作成した．
実施例９
実施例１〜８で作或したＸ線マスク構造体（但しこの実
施例においては、Ｘ線吸収体パターン幅は０．２５μｍ
とした）を用いて、該構造体を透過したＸｉｌによりレ
ジスト材料（ＲＡＹ−ＲＦ、ヘキスト社製）の塗布され
たシリコンウエハーを露光した。Ｘ線はＳＯＲ光を分光
して取り出した波長ｌｎｍの軟Ｘ線を用いた．但し露光
量はシリコンウエハー上で７５ｍＪ／ｃｒｒｒどなる様
にし、且つ露光雰囲気はヘリウムガス、Ｌ５０Ｔｏｒｒ
とした。Comparative Example 2 An X-ray mask structure was produced in the same manner as in Example 5, except that a silicon nitride film (N/SL=1/1) was used instead of the aluminum nitride film. Example 9 X-ray mask structure produced in Examples 1 to 8 (However, in this example, the X-ray absorber pattern width was 0.25 μm.
A silicon wafer coated with a resist material (RAY-RF, manufactured by Hoechst) was exposed to Xil transmitted through the structure. The X-rays used were soft X-rays with a wavelength of 1 nm extracted by spectroscopy of the SOR light. However, the exposure amount was set to 75 mJ/crrr on the silicon wafer, and the exposure atmosphere was helium gas, L50 Torr.
And so.
上記露光の結果、実施例ｌ〜８で作或したいずれのＸ線
マスク構造体を用いた場合でも、上記シＪコンウエハー
上に０．２５ＬＬｍの設計幅に対して誤差δ＝±０．０
３ＬＬｍ以下の精度で高解像度のパターン転写を行うこ
とが可能であった。As a result of the above exposure, no matter which of the X-ray mask structures produced in Examples 1 to 8 is used, the error δ=±0.0 for the design width of 0.25 LLm on the silicon wafer.
It was possible to perform high-resolution pattern transfer with an accuracy of 3LLm or less.
実施例１０
実施例ｌ〜８及び比較例ｌ、２で作成したＸ線マスク構
造体（但しこの実施例においてはＸ線吸収体パターン幅
は０．３５μｍとした）を用い、該マスク構造体を透過
したＸ！！！により実施例９で用いたシリコンウェハー
を実施例９と同一条件で露光した。但し、Ｘ線照射の１
ショットを１０秒間とし、これを同一のＸｉ！マスク構
造体に対して１万回繰り返した。更に前記１ショットを
終える毎に露光雰囲気の圧力を大気圧に戻した。Example 10 Using the X-ray mask structures created in Examples 1 to 8 and Comparative Examples 1 and 2 (however, in this example, the X-ray absorber pattern width was 0.35 μm), the mask structure was Transparent X! ! ! The silicon wafer used in Example 9 was exposed under the same conditions as in Example 9. However, 1 of X-ray irradiation
The shot is for 10 seconds, and this is the same Xi! The mask structure was repeated 10,000 times. Furthermore, the pressure of the exposure atmosphere was returned to atmospheric pressure each time the above-mentioned one shot was completed.
上記の結果を第１表に示す。ここで解像性の評価は、１
回目のＸ線露光により得られたシリコンウエハー上の転
写パターン幅（μｍ）と、ｌ００回、５００回、ｌ，０
００回、５，０００回及び１万回のＸ線露光により得ら
れたシリコンウェハー上の転写パターン幅（μｍ）との
変化量（ΔＸ）で行った。The above results are shown in Table 1. Here, the resolution evaluation is 1
Transfer pattern width (μm) on the silicon wafer obtained by the second X-ray exposure, l00 times, 500 times, l,0
The amount of change (ΔX) from the transfer pattern width (μm) on the silicon wafer obtained by X-ray exposure 00 times, 5,000 times, and 10,000 times was used.
０は０．０１μｍ≧ΔＸ、
○は０．０２μｍ≧Δｘ＞Ｏ．Ｏｌｇｍ，△は０．０３
ｕｍ＆Δｘ＞０．０２μｍ、×は０．０３μｍくΔＸで
ある．
（発明の効果）
以上詳細に説明した様に、本発明のＸ線マスク構造体は
、低熱膨張、高熱伝導性をもつＸ線透過膜上に、これと
高い接着性を示すＸ線吸収体を形成することにより、高
精度なパターン転写を可能とすると共に、Ｘ線マスク構
造体の作成中或いは使用中におけるＸ線吸収体の倒壊を
防止することが出来る。0 means 0.01μm≧ΔX, ○ means 0.02μm≧Δx>O. Olgm, △ is 0.03
um&Δx>0.02μm, × is 0.03μm minus ΔX. (Effects of the Invention) As explained in detail above, the X-ray mask structure of the present invention has an X-ray absorber that exhibits high adhesion to the X-ray transparent film that has low thermal expansion and high thermal conductivity, on top of the X-ray transparent film that has low thermal expansion and high thermal conductivity. By forming such a structure, highly accurate pattern transfer is possible, and collapse of the X-ray absorber during production or use of the X-ray mask structure can be prevented.
更にはＸ線リソグラフィーの実用面において、同じＸ線
マスク構造体への数千回或は数万回にち及ぶＸ線のパタ
ーン露光の繰り返し及び同じＸ線マスク構造体への数千
回或は数万回にも及ぶ圧力変動の繰り返しに対しても十
分な耐久性を有し、パターンの解像性に経時的変化（悪
化）を生じないＸ線マスク構造体を提供することが出来
る。Furthermore, in the practical aspect of X-ray lithography, the same X-ray mask structure is repeatedly exposed to X-ray patterns thousands or tens of thousands of times, and the same X-ray mask structure is exposed several thousand times or tens of thousands of times. It is possible to provide an X-ray mask structure that has sufficient durability even when pressure fluctuations are repeated tens of thousands of times, and does not cause a change (deterioration) in pattern resolution over time.
第１図は本発明のＸ線マスク構造体の断面を説明する図
であり、第２図〜第４図は本発明のＸ線マスク構造体の
製造工程を説明する図である。
第ｌ図において
ｌ：保持枠
２：Ｘ４１透過膜
３：Ｘ線吸収体
第２図において
２１：シリコンウエハー
２２：熱酸化膜
２３：窒化アルミニウム膜
２４：アビエゾンワックス層
２５：窒化タングステン膜
２６：ポリイミド膜
２７：シリコン含有レジスト
２８：パターン
第３図において
３ｌ：シリコンウエハー
３２：窒化アルミニウム
３３：窒化タングステン膜
３４：ポリイミド膜
３５：シリコン含有レジスト
３６：パターン
第４図において
４ｌ：シリコンウェハー
４２；ポリイミド膜
４３二窒化アルミニウム膜
４４：窒化タングステン膜
４５：ポリイミド膜
４６：シリコン含有レジスト
４７：パターンFIG. 1 is a diagram illustrating a cross section of the X-ray mask structure of the present invention, and FIGS. 2 to 4 are diagrams explaining the manufacturing process of the X-ray mask structure of the present invention. In FIG. 1, l: Holding frame 2: X41 transmission film 3: X-ray absorber In FIG. Polyimide film 27: Silicon-containing resist 28: Pattern 3l in FIG. 3: Silicon wafer 32: Aluminum nitride 33: Tungsten nitride film 34: Polyimide film 35: Silicon-containing resist 36: Pattern 4l in FIG. 4: Silicon wafer 42; Polyimide Film 43 Aluminum dinitride film 44: Tungsten nitride film 45: Polyimide film 46: Silicon-containing resist 47: Pattern
Claims (3)
当該膜を少なくとも含む積層膜からなるＸ線透過膜と、
該膜上に保持された金属及び窒素を主成分とするＸ線吸
収体と、上記Ｘ線透過膜を保持する保持枠とを有するこ
とを特徴とするＸ線リソグラフィー用マスク構造体。(1) An X-ray transparent film consisting of a single layer film containing aluminum and nitrogen as main components or a laminated film containing at least the film;
A mask structure for X-ray lithography, comprising: an X-ray absorber mainly composed of metal and nitrogen held on the film; and a holding frame that holds the X-ray transparent film.
＿ｘ（０＜ｘ＜１）からなる請求項１に記載のＸ線リソ
グラフィー用マスク構造体。(2) The X-ray absorber is WN_x, TaN_x or HfN
The mask structure for X-ray lithography according to claim 1, consisting of _x (0<x<1).
体と、該Ｘ線透過膜を保持する保持枠とを有するＸ線マ
スク構造体を通してＸ線をＸ線被露光材に露光するＸ線
露光方法において、前記Ｘ線マスク構造体のＸ線透過膜
がアルミニウム及び窒素を主成分とする単層膜又は当該
膜を少なくとも含む積層膜からなり、Ｘ線吸収体が上記
膜上に保持された金属及び窒素を主成分としてなること
を特徴とするＸ線露光方法。(3) X-rays are applied to the X-ray exposed material through an X-ray mask structure having an X-ray transparent film, an X-ray absorber held by the X-ray transparent film, and a holding frame that holds the X-ray transparent film. In the X-ray exposure method, the X-ray transmitting film of the X-ray mask structure is composed of a single-layer film containing aluminum and nitrogen as main components or a laminated film containing at least the film, and the X-ray absorber is composed of the above-mentioned film. An X-ray exposure method characterized in that the main components are metal and nitrogen held on top.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2047238A JPH0316116A (en) | 1989-03-09 | 1990-03-01 | Mask structure for x-ray lithography and x-ray exposure using mask structure |
| US07/489,277 US5196283A (en) | 1989-03-09 | 1990-03-06 | X-ray mask structure, and x-ray exposure process |
| DE69023023T DE69023023T2 (en) | 1989-03-09 | 1990-03-09 | X-ray mask structure and X-ray exposure process. |
| EP90104540A EP0386786B1 (en) | 1989-03-09 | 1990-03-09 | X-ray mask structure, and x-ray exposure process |
| US08/565,215 US5773177A (en) | 1989-03-09 | 1995-11-30 | X-ray mask structure, and X-ray exposure process |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1-55031 | 1989-03-09 | ||
| JP5503189 | 1989-03-09 | ||
| JP2047238A JPH0316116A (en) | 1989-03-09 | 1990-03-01 | Mask structure for x-ray lithography and x-ray exposure using mask structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0316116A true JPH0316116A (en) | 1991-01-24 |
Family
ID=26387402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2047238A Pending JPH0316116A (en) | 1989-03-09 | 1990-03-01 | Mask structure for x-ray lithography and x-ray exposure using mask structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0316116A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007273514A (en) * | 2006-03-30 | 2007-10-18 | Hoya Corp | Reflective mask blanks, reflective mask, and method for manufacturing semiconductor device |
| JPWO2008084680A1 (en) * | 2006-12-27 | 2010-04-30 | 旭硝子株式会社 | Reflective mask blank for EUV lithography |
| JPWO2008093534A1 (en) * | 2007-01-31 | 2010-05-20 | 旭硝子株式会社 | Reflective mask blank for EUV lithography |
| US9207529B2 (en) | 2012-12-27 | 2015-12-08 | Asahi Glass Company, Limited | Reflective mask blank for EUV lithography, and process for its production |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61140942A (en) * | 1984-12-13 | 1986-06-28 | Canon Inc | Mask structure for lithography |
| JPS6376325A (en) * | 1987-06-30 | 1988-04-06 | Agency Of Ind Science & Technol | X-ray absorber film of mask for x-ray lithography |
| JPS63317676A (en) * | 1987-06-19 | 1988-12-26 | Sharp Corp | Production of thin metallic compound film having non-grained structure |
-
1990
- 1990-03-01 JP JP2047238A patent/JPH0316116A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61140942A (en) * | 1984-12-13 | 1986-06-28 | Canon Inc | Mask structure for lithography |
| JPS63317676A (en) * | 1987-06-19 | 1988-12-26 | Sharp Corp | Production of thin metallic compound film having non-grained structure |
| JPS6376325A (en) * | 1987-06-30 | 1988-04-06 | Agency Of Ind Science & Technol | X-ray absorber film of mask for x-ray lithography |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007273514A (en) * | 2006-03-30 | 2007-10-18 | Hoya Corp | Reflective mask blanks, reflective mask, and method for manufacturing semiconductor device |
| JPWO2008084680A1 (en) * | 2006-12-27 | 2010-04-30 | 旭硝子株式会社 | Reflective mask blank for EUV lithography |
| JP5018787B2 (en) * | 2006-12-27 | 2012-09-05 | 旭硝子株式会社 | Reflective mask blank for EUV lithography |
| JPWO2008093534A1 (en) * | 2007-01-31 | 2010-05-20 | 旭硝子株式会社 | Reflective mask blank for EUV lithography |
| JP5018789B2 (en) * | 2007-01-31 | 2012-09-05 | 旭硝子株式会社 | Reflective mask blank for EUV lithography |
| US9207529B2 (en) | 2012-12-27 | 2015-12-08 | Asahi Glass Company, Limited | Reflective mask blank for EUV lithography, and process for its production |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5773177A (en) | X-ray mask structure, and X-ray exposure process | |
| US6096661A (en) | Method for depositing silicon dioxide using low temperatures | |
| JPH1070074A (en) | Pattern writing method in the course of manufacturing x-ray mask | |
| US6140255A (en) | Method for depositing silicon nitride using low temperatures | |
| JP3470963B2 (en) | Projection electron beam lithography mask | |
| US4293624A (en) | Method for making a mask useful in X-ray lithography | |
| EP0473332B1 (en) | X-Ray lithography mask and method for producing same | |
| KR900003254B1 (en) | X-ray exposure masks | |
| US5375157A (en) | X-ray mask structure and a production method thereof, an exposure method using the X-ray mask structure, and a device fabricated by using the X-ray mask structure | |
| JPH0316116A (en) | Mask structure for x-ray lithography and x-ray exposure using mask structure | |
| US5567551A (en) | Method for preparation of mask for ion beam lithography | |
| EP1360552B1 (en) | Fabrication of structures of metal/semiconductor compound by x-ray/euv projection lithography | |
| US20220043336A1 (en) | Pellicle for euv lithography, and method for manufacturing the same | |
| JP4641086B2 (en) | Blank for halftone phase shift photomask, halftone phase shift photomask, and manufacturing method thereof | |
| US5733688A (en) | Lithographic mask structure and method of producing the same comprising W and molybdenum alloy absorber | |
| US5057388A (en) | Method for the preparation of mask for X-ray lithography | |
| JP2684105B2 (en) | X-ray mask structure and X-ray exposure method using the same | |
| JP3219619B2 (en) | X-ray mask, manufacturing method of the mask, and device manufacturing method using the mask | |
| JPH04315417A (en) | Mask for long wavelength x-ray aligner and manufacture thereof | |
| JPS63115332A (en) | Mask for x-ray exposure | |
| JPH03105912A (en) | X-ray mask blank and x-ray mask structure body | |
| JPH04338628A (en) | Mask for x-ray lithography and method of manufacture therefor | |
| JPH06260397A (en) | Mask for x-ray exposure and manufacture thereof | |
| JPS6289053A (en) | Photomask | |
| WO1994024608A2 (en) | Method of preparation of mask for ion beam lithography |