JPH03158764A - Probe device - Google Patents
Probe deviceInfo
- Publication number
- JPH03158764A JPH03158764A JP29816289A JP29816289A JPH03158764A JP H03158764 A JPH03158764 A JP H03158764A JP 29816289 A JP29816289 A JP 29816289A JP 29816289 A JP29816289 A JP 29816289A JP H03158764 A JPH03158764 A JP H03158764A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- probe
- fluid
- tip
- nearby
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000523 sample Substances 0.000 title claims abstract description 65
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 8
- 239000012530 fluid Substances 0.000 abstract description 13
- 238000001514 detection method Methods 0.000 abstract description 6
- 230000005540 biological transmission Effects 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 231100000053 low toxicity Toxicity 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、主として半導体基板上に形成された電子回路
の高周波特性を測定するプローブ装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention mainly relates to a probe device for measuring high frequency characteristics of an electronic circuit formed on a semiconductor substrate.
半導体素子の動作速度の高速化に伴い、半導体基板上に
形成されたトランジスタや増幅器等の能動素子や、アッ
テネータ等の受動素子の高周波特性をオンウェーハで測
定する必要が生じた。このため、プローブの尖端部まで
コプレーナ導波路等の高周波導波路が形成されたプロー
ブヘッドや、プローブの尖端近傍に高周波バイパス手段
が設けられて高周波の影響を受けずに直流電源電圧を半
導体基板上の電極パッドに印加できるプローブヘッドが
開発されている（例えば、米国特許第４６９７１４３号
参照）。As the operating speed of semiconductor devices increases, it has become necessary to measure on-wafer high-frequency characteristics of active elements such as transistors and amplifiers, and passive elements such as attenuators formed on semiconductor substrates. For this reason, a probe head in which a high-frequency waveguide such as a coplanar waveguide is formed up to the tip of the probe, or a high-frequency bypass means provided near the tip of the probe, is used to pass DC power supply voltage onto a semiconductor substrate without being affected by high frequencies. Probe heads have been developed that can apply voltage to electrode pads (see, eg, US Pat. No. 4,697,143).
（発明が解決しようとする課題〕
このようなプローブヘッドは、半導体基板上の供試デバ
イス電極に当接するプローブ尖端を、高周波信号の伝送
／反射特性測定における信号強度／位相の基準面とした
オンウェハ供試デバイス正味の伝送／反射特性を測定す
る目的でつくられたものであり、通常は供試デバイス測
定に先立って、そのプローブヘッドを含めた測定系の誤
差補正項を求める校正（較正）作業が行われる。この校
正（較正）作業は、通常は高周波インピーダンスが既知
の抵抗素子等を基準として一定温度下で行われる。(Problems to be Solved by the Invention) Such a probe head is an on-wafer probe head that uses the tip of the probe that contacts the electrode of the device under test on the semiconductor substrate as a reference plane for signal intensity/phase in measuring the transmission/reflection characteristics of high-frequency signals. It is created for the purpose of measuring the net transmission/reflection characteristics of the device under test, and usually involves calibration work to determine error correction terms for the measurement system, including the probe head, before measuring the device under test. This calibration work is normally performed at a constant temperature using a resistance element or the like with known high frequency impedance as a reference.
しかしながら、半導体デバイスの温度を変えてその高周
波特性を測定する場合には、プローブヘッドの温度も供
試デバイスとの接触による熱伝導等のため、供試デバイ
スの温度変化に追従して変化する。このため、プローブ
を構成する部品材料の温度特性により、伝送路の高周波
信号の伝送／反射特性が変化してしまい、上述したよう
に一定温度下で求められた誤差補正項では供試デバイス
の高周波特性を正確に求めることができないという問題
があった。However, when changing the temperature of a semiconductor device and measuring its high frequency characteristics, the temperature of the probe head also changes to follow the temperature change of the device under test due to heat conduction due to contact with the device under test. For this reason, the transmission/reflection characteristics of high-frequency signals in the transmission line change depending on the temperature characteristics of the component materials that make up the probe, and as mentioned above, the error correction term obtained under a constant temperature There was a problem that the characteristics could not be determined accurately.
さらに、意図的に半導体デバイスの温度を変えない場合
でも、電源電流通電などによる半導体デバイスの測定中
の昇温によって、接触熱伝導を通じて高周波プローブの
伝送／反射特性が変化することがあり、この場合も上記
誤差補正項では測定の正確さを欠くことになる。Furthermore, even if the temperature of the semiconductor device is not intentionally changed, the transmission/reflection characteristics of the high-frequency probe may change through contact heat conduction due to temperature increase during measurement of the semiconductor device due to power supply current, etc. However, the error correction term described above results in a lack of measurement accuracy.
また、上述した高周波特性測定用のプローブヘッドばか
りでなく、電源供給用のプローブヘッドの場合もプロー
ブの尖端近傍に設けられた高周波バイパス手段（コンデ
ンサー等）の特性がプローブの温度変化に伴って変化し
、安定な電源供給が不可能となり正確に電気特性を測定
する上で妨げとなるという問題があった。In addition, in the case of probe heads for power supply as well as probe heads for measuring high frequency characteristics mentioned above, the characteristics of high frequency bypass means (capacitors, etc.) provided near the tip of the probe change as the temperature of the probe changes. However, there is a problem in that a stable power supply is impossible, which hinders accurate measurement of electrical characteristics.
そこで、上述の事情に鑑み、本発明はさまざまな温度条
件下における供試デバイスの高周波特性を正確に測定す
ることができ、また、温度変化に伴う供試デバイスの高
周波特性の変化を正確に測定することができるプローブ
装置を提供することを目的としている。Therefore, in view of the above circumstances, the present invention is capable of accurately measuring the high frequency characteristics of a device under test under various temperature conditions, and also accurately measuring changes in the high frequency characteristics of the device under test due to temperature changes. The purpose of the present invention is to provide a probe device that can perform the following steps.
上述の目的を達成するため、本発明によるプローブ装置
においては、半導体基板上に形成された電極に当接する
プローブの尖端近傍の温度を検出し、これに応じた信号
を出力する温度検出手段と、該プローブの尖端近傍に設
けられ、温度検出手段の出力信号に基づきプローブの尖
端近傍の温度を調節する温度調節手段とを備えた構成と
なっている。In order to achieve the above object, the probe device according to the present invention includes temperature detection means for detecting the temperature near the tip of the probe that contacts an electrode formed on a semiconductor substrate and outputting a signal in accordance with the temperature; The probe is provided with a temperature adjusting means that is provided near the tip of the probe and adjusts the temperature near the tip of the probe based on the output signal of the temperature detecting means.
このような構成とすることにより、少なくともプローブ
の尖端近傍の温度を一定に保つことが可能となる。With such a configuration, it is possible to keep the temperature at least near the tip of the probe constant.
以下、本発明の実施例について第１図および第２図を参
照しつつ、説明する。Embodiments of the present invention will be described below with reference to FIGS. 1 and 2.
第１図は本発明のプローブ装置に用いられるプローブヘ
ッドの一例を分解して示している。この図に示したプロ
ーブヘッドは、尖端にて基板上に形成された半導体素子
（供試デバイス）の電極パッドに当接するプローブ１と
、これを保持するベース２とを備えている。プローブ１
の下面には高周波信号を半導体素子の電極パッドまで導
くため、例えばコプレーナ形の高周波伝送線路が形成さ
れている。この高周波伝送線路にはベース２に固定され
た高周波同軸コネクタ３が接続されており、高周波同軸
コネクタ３を介して同軸ケーブル（図示せず）に接続さ
れる。また、プローブ１の尖端近傍にはサーミスタ５が
付設されており、サーミスタ５はプローブ１の尖端近傍
の温度を検出し、これに応じた温度信号を出力する。こ
の温度信号は外部の温度制御回路（図示せず）に入力さ
れるようになっている。FIG. 1 shows an exploded example of a probe head used in the probe device of the present invention. The probe head shown in this figure includes a probe 1 whose tip comes into contact with an electrode pad of a semiconductor element (device under test) formed on a substrate, and a base 2 that holds the probe. probe 1
For example, a coplanar high-frequency transmission line is formed on the bottom surface of the semiconductor device in order to guide high-frequency signals to the electrode pads of the semiconductor elements. A high frequency coaxial connector 3 fixed to the base 2 is connected to this high frequency transmission line, and is connected to a coaxial cable (not shown) via the high frequency coaxial connector 3. Further, a thermistor 5 is attached near the tip of the probe 1, and the thermistor 5 detects the temperature near the tip of the probe 1 and outputs a temperature signal corresponding to the temperature. This temperature signal is input to an external temperature control circuit (not shown).
他方、ベース２は互いに接合される第１基体６と第２基
体７とから構成されており、流体が循環流通する循環流
路を有している。この循環流路は、例えば第１基体６に
２つの貫通孔８ ａ ｓ ８ ｂを穿ち、第１基体６お
よび第２基体７の互いに接合される面の少なくとも一方
にプローブ１の尖端近傍まで延在し貫通孔８ａと８ｂと
を互いに連通ずる溝９を刻設しておき、第１基体６及び
第２基体７を互いに接合することにより形成される。こ
のようにして形成された循環流路には、温度調節用流体
が供給され、該流体が循環流路内を流通する間に該流体
とベースとの間で熱交換が行われる。温度調節用流体の
温度はサーミスタ５からの温度信号が入力されている温
度制御回路により所定温度に調節される。また、温度調
節用流体の流量は外部に設けられた制御弁（図示せず）
の開閉制御等により調節される。もちろん目的に応じて
流体の流量は一定として流体の温度だけを変えるように
してもよいし、流体の温度を一定としておいて流量制御
することにより加熱あるいは冷却のどちらかのみが可能
であるようにしてもよい。このようにして、温度制御回
路に予め設定されている温度にプローブ１の尖端部を含
めプローブヘッド全体の温度を保つことができるように
なり、常温（例えば２０℃）に保つことが可能となる。On the other hand, the base 2 is composed of a first base body 6 and a second base body 7 that are joined to each other, and has a circulation passage through which fluid circulates. This circulation flow path is formed by, for example, making two through holes 8 a s 8 b in the first base 6 and extending to the vicinity of the tip of the probe 1 in at least one of the surfaces of the first base 6 and the second base 7 that are joined to each other. It is formed by cutting a groove 9 that communicates the through holes 8a and 8b with each other, and then joining the first base body 6 and the second base body 7 to each other. A temperature regulating fluid is supplied to the circulation channel thus formed, and heat exchange is performed between the fluid and the base while the fluid flows through the circulation channel. The temperature of the temperature regulating fluid is adjusted to a predetermined temperature by a temperature control circuit into which a temperature signal from the thermistor 5 is input. In addition, the flow rate of the temperature regulating fluid is controlled by an external control valve (not shown).
It is adjusted by opening/closing control, etc. Of course, depending on the purpose, the flow rate of the fluid may be kept constant and only the temperature of the fluid may be changed, or the temperature of the fluid may be kept constant and the flow rate controlled to enable either heating or cooling. You can. In this way, it becomes possible to maintain the temperature of the entire probe head, including the tip of the probe 1, at the temperature preset in the temperature control circuit, making it possible to maintain it at room temperature (for example, 20°C). .
これにより、プローブ温度を誤差補正項を求めたときの
温度に保つことができるので、所定温度条件下で予め求
めた誤差補正項を用いて、さまざまな温度条件下におけ
る供試デバイスの高周波特性を正確に測定することがで
き、また、温度変化に伴う供試デバイスの高周波特性の
変化を正確に測定することができるようになる。As a result, the probe temperature can be maintained at the temperature when the error correction term was calculated, so the high-frequency characteristics of the device under test under various temperature conditions can be evaluated using the error correction term calculated in advance under the specified temperature conditions. It becomes possible to accurately measure, and also to accurately measure changes in the high frequency characteristics of the device under test due to temperature changes.
第２図は本発明のプローブ装置に用いられるプローブヘ
ッドの一例であって、第１図に示したプローブヘッドと
異なるプローブヘッドを分解して示す。FIG. 2 is an exploded view of an example of a probe head used in the probe device of the present invention, which is different from the probe head shown in FIG. 1.
このプローブヘッドにおいては、プローブ１の尖端近傍
の温度を検出し、これに応じた信号を出力する温度検出
手段として、第１図に示したサーミスタ５の代わりに熱
電対１１が用いられている。In this probe head, a thermocouple 11 is used in place of the thermistor 5 shown in FIG. 1 as a temperature detection means for detecting the temperature near the tip of the probe 1 and outputting a signal corresponding to the temperature.
また、プローブ１の尖端近傍の温度を調節する温度調節
手段として、基体１０とプローブ１との間に電熱ヒータ
１２およびベルチェ素子１３を備えている。電熱ヒータ
１２は絶縁板１５および１６の相互間に挾み込まれ、プ
ローブ１の尖端近傍まで敷設されたニクロム等の発熱抵
抗体であり、これに電流を供給することによりプローブ
１の尖端部を含めプローブヘッド全体を加熱することが
できる。なお、電熱ヒータ１２としては、直流ヒータを
用いることが好ましい。ベルチェ素子１３はスペーサ１
７に埋め込まれており、供給電流を制御することにより
、ベルチェ効果によりプローブ１の尖端部を含めプロー
ブヘッド全体を冷却することができる。したがって、温
度検出手段の出力信号に応じて、電熱ヒータ１２あるい
はベルチェ素子１３に電流を供給することにより、プロ
ーブ１の尖端部を含めプローブヘッド全体を所定温度（
例えば、常温２０℃）に保つことができる。Further, as temperature control means for controlling the temperature near the tip of the probe 1, an electric heater 12 and a Vertier element 13 are provided between the base body 10 and the probe 1. The electric heater 12 is a heating resistor made of nichrome or the like, which is sandwiched between insulating plates 15 and 16 and placed near the tip of the probe 1. By supplying current to this, the tip of the probe 1 is heated. The entire probe head can be heated. Note that as the electric heater 12, it is preferable to use a DC heater. Vertier element 13 is spacer 1
By controlling the supplied current, the entire probe head including the tip of the probe 1 can be cooled by the Beltier effect. Therefore, by supplying current to the electric heater 12 or the Bertier element 13 in accordance with the output signal of the temperature detection means, the entire probe head including the tip of the probe 1 is heated to a predetermined temperature (
For example, it can be maintained at room temperature (20° C.).
したがって、第１図に示した例と同様に、所定温度条件
下で予め求めた誤差補正項を用いて、さまざまな温度条
件下における供試デバイスの高周波特性を正確に測定す
ることができ、温度変化に伴う供試デバイスの高周波特
性の変化を正確に測定することができるようになる。Therefore, similar to the example shown in Figure 1, it is possible to accurately measure the high frequency characteristics of the device under test under various temperature conditions by using the error correction term determined in advance under a given temperature condition. It becomes possible to accurately measure changes in the high frequency characteristics of the device under test due to changes.
なお、上述した実施例では、プローブヘッドを加熱する
ことも冷却することもできるようになっているが、供試
デバイスの高温時の高周波特性を測定するためには、プ
ローブヘッドにペルチェ素子１３等の冷却手段を設けて
おけば足り、また、供試デバイスの低温時の高周波特性
を測定するためには、プローブヘッドに電熱ヒータ１２
等の加熱手段を設けておけば足りるのであって、必ずし
も加熱および冷却の両方が可能となっている必要はない
。In the above embodiment, the probe head can be heated or cooled, but in order to measure the high frequency characteristics of the test device at high temperatures, it is necessary to install a Peltier element 13 or the like in the probe head. It is sufficient to provide a cooling means for
It is sufficient to provide a heating means such as the like, and it is not necessarily necessary to be capable of both heating and cooling.
供給路に併設された温度検出手段と、温度検出平送
段の出力信号に基づき、前記低毒路等の温度を調節する
温度調節手段とを備えたプローブ装置一般を包含する。The present invention includes a general probe device including a temperature detection means attached to a supply path and a temperature adjustment means for adjusting the temperature of the low-toxicity path based on the output signal of the temperature detection flat feed stage.
以上説明したように、本発明によれば、少なく項を求め
たときの温度に保つことができる。したがって、所定温
度条件下で予め求めた誤差補正項を用いてさまざまな温
度条件下における供試デバイスの高周波特性を正確に測
定することができ、温度変化に伴う供試デバイスの高周
波特性の変化を正確に測定することができる。As explained above, according to the present invention, it is possible to maintain the temperature at the time when the temperature is calculated in a small number of terms. Therefore, it is possible to accurately measure the high-frequency characteristics of the device under test under various temperature conditions using an error correction term determined in advance under a given temperature condition, and it is possible to accurately measure the high-frequency characteristics of the device under test under various temperature conditions. Can be measured accurately.
また、バイパス手段をそなえた電源供給路の温度が一定
に保たれるので、供試デバイスの温度が変わっても常に
安定した電源供給が可能で、供試デバイス特性を正確に
測定することができる。In addition, since the temperature of the power supply path equipped with bypass means is kept constant, a stable power supply is always possible even if the temperature of the device under test changes, making it possible to accurately measure the characteristics of the device under test. .
第１図および第２図は本発明によるプローブ装置に用い
られるプローブヘッドの分解斜視図である。
１・・・プローブ、２・・・ベース、３・・・高周波同
軸コネクタ、５・・・サーミスタ、６・・・第１基体、
７・・・第２基体、８ａ、８ｂ・・・貫通孔、９・・・
溝、１０・・・基体、１１・・・熱電対、１２・・・電
熱ヒータ、１３・・・ベルチェ素子、１５．１６・・・
絶縁阪、１７・・・スペーサ。1 and 2 are exploded perspective views of a probe head used in a probe device according to the present invention. DESCRIPTION OF SYMBOLS 1... Probe, 2... Base, 3... High frequency coaxial connector, 5... Thermistor, 6... First base body,
7... Second base body, 8a, 8b... Through hole, 9...
Groove, 10... Base, 11... Thermocouple, 12... Electric heater, 13... Vertier element, 15.16...
Insulation plate, 17...Spacer.
Claims (1)
するプローブ装置であって、 半導体基板上に形成された電極に当接するプローブの尖
端近傍の温度を検出し、これに応じた信号を出力する温
度検出手段と、 前記プローブの尖端近傍に設けられ、前記温度検出手段
の出力信号に基づき前記プローブの尖端近傍の温度を調
節する温度調節手段とを備えていることを特徴とするプ
ローブ装置。[Claims] A probe device for measuring the electrical characteristics of an electronic circuit, etc. formed on a semiconductor substrate, which detects the temperature near the tip of the probe that comes into contact with an electrode formed on the semiconductor substrate; temperature detecting means for outputting a signal according to the temperature, and temperature adjusting means provided near the tip of the probe and adjusting the temperature near the tip of the probe based on the output signal of the temperature detecting means. Characteristic probe device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29816289A JPH03158764A (en) | 1989-11-16 | 1989-11-16 | Probe device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29816289A JPH03158764A (en) | 1989-11-16 | 1989-11-16 | Probe device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03158764A true JPH03158764A (en) | 1991-07-08 |
Family
ID=17856003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29816289A Pending JPH03158764A (en) | 1989-11-16 | 1989-11-16 | Probe device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03158764A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6242930B1 (en) | 1997-11-21 | 2001-06-05 | Nec Corporation | High-frequency probe capable of adjusting characteristic impedance in end part and having the end part detachable |
| US6281691B1 (en) | 1998-06-09 | 2001-08-28 | Nec Corporation | Tip portion structure of high-frequency probe and method for fabrication probe tip portion composed by coaxial cable |
| CN102735889A (en) * | 2011-04-13 | 2012-10-17 | 致茂电子(苏州)有限公司 | Probe circuit |
| CN103364599A (en) * | 2012-03-29 | 2013-10-23 | 北京普源精电科技有限公司 | Probe having attenuating function, signal acquisition system and signal acquisition method |
| JP2013229496A (en) * | 2012-04-26 | 2013-11-07 | Mitsubishi Electric Corp | Inspection device |
| JP2015230215A (en) * | 2014-06-04 | 2015-12-21 | 三菱電機株式会社 | Measuring apparatus |
-
1989
- 1989-11-16 JP JP29816289A patent/JPH03158764A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6242930B1 (en) | 1997-11-21 | 2001-06-05 | Nec Corporation | High-frequency probe capable of adjusting characteristic impedance in end part and having the end part detachable |
| US6281691B1 (en) | 1998-06-09 | 2001-08-28 | Nec Corporation | Tip portion structure of high-frequency probe and method for fabrication probe tip portion composed by coaxial cable |
| US6400168B2 (en) | 1998-06-09 | 2002-06-04 | Nec Corporation | Method for fabricating probe tip portion composed by coaxial cable |
| CN102735889A (en) * | 2011-04-13 | 2012-10-17 | 致茂电子(苏州)有限公司 | Probe circuit |
| CN103364599A (en) * | 2012-03-29 | 2013-10-23 | 北京普源精电科技有限公司 | Probe having attenuating function, signal acquisition system and signal acquisition method |
| JP2013229496A (en) * | 2012-04-26 | 2013-11-07 | Mitsubishi Electric Corp | Inspection device |
| US9188624B2 (en) | 2012-04-26 | 2015-11-17 | Mitsubishi Electric Corporation | Inspection apparatus |
| JP2015230215A (en) * | 2014-06-04 | 2015-12-21 | 三菱電機株式会社 | Measuring apparatus |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5420521A (en) | Burn-in module | |
| US5260668A (en) | Semiconductor surface resistivity probe with semiconductor temperature control | |
| US7355428B2 (en) | Active thermal control system with miniature liquid-cooled temperature control device for electronic device testing | |
| US7394271B2 (en) | Temperature sensing and prediction in IC sockets | |
| US20040042529A1 (en) | Device for sensing temperature of an electronic chip | |
| US20020118032A1 (en) | Heating apparatus containing an array of surface mount components for DUT performance testing | |
| US6530686B1 (en) | Differential scanning calorimeter having low drift and high response characteristics | |
| JP2008537637A (en) | Temperature detection and prediction in IC sockets | |
| US3882728A (en) | Temperature sensing circuit | |
| US4850714A (en) | Apparatus for measuring the thermal conductivity of gases | |
| US5903163A (en) | Apparatus and method of controlling the environmental temperature near semiconductor devices under test | |
| JP3795352B2 (en) | Temperature control device and temperature control method for semiconductor module | |
| JPH03158764A (en) | Probe device | |
| US4317985A (en) | Dual heater stabilization apparatus and method for a crystal oven | |
| JP2000002730A (en) | Measuring port temperature stabilizing device | |
| JPH0632591Y2 (en) | Temperature measuring device | |
| KR20150037458A (en) | Apparatus and method for measuring thermoelectric device | |
| JPS61279086A (en) | Heating element | |
| JPH06168037A (en) | Automatic and electronic temperature control | |
| US4847471A (en) | Heater for use as either primary or auxiliary heat source and improved circuitry for controlling the heater | |
| RU2082118C1 (en) | Medicinal radiothermometer | |
| JP3959828B2 (en) | pressure sensor | |
| JP2001165990A (en) | Method and apparatus for controlling temperature of electronic device | |
| Zrudsky et al. | A high resolution dynamic technique of thermoelectric power measurements | |
| EP3483597A1 (en) | Device for determining the parameters of strip-type superconductors |