JPH03156877A - High-frequency heating device - Google Patents
High-frequency heating deviceInfo
- Publication number
- JPH03156877A JPH03156877A JP29664889A JP29664889A JPH03156877A JP H03156877 A JPH03156877 A JP H03156877A JP 29664889 A JP29664889 A JP 29664889A JP 29664889 A JP29664889 A JP 29664889A JP H03156877 A JPH03156877 A JP H03156877A
- Authority
- JP
- Japan
- Prior art keywords
- magnetron
- circuit
- voltage
- transformer
- switching element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 238000009499 grossing Methods 0.000 claims abstract description 11
- 239000003990 capacitor Substances 0.000 abstract description 13
- 238000010586 diagram Methods 0.000 description 8
- 238000004804 winding Methods 0.000 description 8
- 238000001514 detection method Methods 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Control Of High-Frequency Heating Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は高周波加熱装置、特にマグネトロンの駆動に
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a high frequency heating device, particularly to driving a magnetron.
第５図（よ例えば特開昭６３−１９８２８６号公報に示
された従来の高周波加熱装置に示された制御回路図であ
り１図において（２６）は直流電源、（２）は平滑コン
デンサ、（３）はマグネトロン駆動用変圧器、 （２７
）は変圧器（３）に直列に接続された共振コンデンサ、
（５）は変圧器（３）に直列に接続された半導体スイッ
チング素子で、変圧器（３）、共振コンデンサ（２７）
、半導体スイッチング素子（５）と共にインバータ回路
を構成する。。変圧器（３）の２次側の第１の巻線には
インダクタ（２８）が、そのあとに高圧コンデンサ（至
）が接続され、高圧ダイオード（２１）と共に半波倍電
圧整流回路によるマグネトロン駆動回路を構成する。FIG. 5 is a control circuit diagram of a conventional high-frequency heating device shown in, for example, Japanese Patent Application Laid-Open No. 63-198286. In FIG. 1, (26) is a DC power supply, (2) is a smoothing capacitor, ( 3) is the magnetron drive transformer, (27
) is a resonant capacitor connected in series with the transformer (3),
(5) is a semiconductor switching element connected in series to the transformer (3), the transformer (3), the resonant capacitor (27)
, constitutes an inverter circuit together with the semiconductor switching element (5). . An inductor (28) is connected to the first winding on the secondary side of the transformer (3), followed by a high voltage capacitor (to), and together with a high voltage diode (21), the magnetron is driven by a half-wave voltage doubler rectifier circuit. Configure the circuit.
この半波倍電圧整流回路の出力がマグネトロン（９）に
供給される。The output of this half-wave voltage doubler rectifier circuit is supplied to the magnetron (9).
従来の高周波加熱装置は上記のように構成され。 A conventional high-frequency heating device is configured as described above.
インダクタ（２８）があるため、マグネトロンへ効率よ
く電力を供給することができるが、変圧器（３）の２次
側のＬＣ共振回路の中にインダクタ（２８）が挿入され
ているため定数の設定が難しく、またマグネトロン電流
と−コンデンサ［相］の充電電流が流れるため線径が太
く耐圧の高い高価なインダクタ〔２８）とせざるを得な
かった。Because of the inductor (28), power can be efficiently supplied to the magnetron, but since the inductor (28) is inserted into the LC resonant circuit on the secondary side of the transformer (3), it is difficult to set the constant. Moreover, since the magnetron current and the charging current of the -capacitor [phase] flow, an expensive inductor [28] with a thick wire diameter and high withstand voltage had to be used.
この発明は以上のような課題を解消するためになされた
もので２マグネトロンへ効率よく電力を供給でき、電流
容量の小さい安価な高周波加熱装置を得ることを口約と
する。This invention was made to solve the above-mentioned problems, and aims to provide an inexpensive high-frequency heating device that can efficiently supply power to two magnetrons and has a small current capacity.
この発明にかかる高周波加熱装置は、商用電源を整流・
平滑して直流電源を作る整流・平滑回路。The high-frequency heating device according to the present invention rectifies and
A rectifier/smoothing circuit that smoothes and creates DC power.
この整流・平滑回路に接続された変圧器、この変圧器に
直列に接続された半導体スイッチング素子。A transformer is connected to this rectifier/smoothing circuit, and a semiconductor switching element is connected in series to this transformer.
この半導体スイッチング素子を駆動する駆動回路。A drive circuit that drives this semiconductor switching element.
前記変圧器の２次側に接続された倍電圧整流回路。A voltage doubler rectifier circuit connected to the secondary side of the transformer.
この倍電圧整流回路によって高圧直流電力が供給される
マグネトロンを備え、前記倍電圧整流回路と前記マグネ
トロンとの間にインダクタを接続するようにしたもので
ある。The magnetron is provided with a magnetron to which high-voltage DC power is supplied by the voltage doubler rectifier circuit, and an inductor is connected between the voltage doubler rectifier circuit and the magnetron.
この発明におけろ高周波加熱装置は２倍電圧整流回路と
マグネトロンとの間にインダクタを接続することにより
、マグネトロンに安定して電力を供給すると共に、＠電
圧Ｍ流回路に含まれるコンデンサの充電電流がインダク
タに流れるため電流容量を小さくできる。In this invention, the high-frequency heating device connects an inductor between the double voltage rectifier circuit and the magnetron, thereby stably supplying power to the magnetron and charging current to the capacitor included in the @voltage M current circuit. flows through the inductor, so the current capacity can be reduced.
以下、この発明の一実施例について図を用いて説明する
。An embodiment of the present invention will be described below with reference to the drawings.
第１図はこの発明による高周波加熱装置の一実施例を示
す制御回路図である。FIG. 1 is a control circuit diagram showing an embodiment of a high frequency heating device according to the present invention.
図において、（１）は商用電源、（２）は整流・平滑回
路で、ヒユーズａω、スイッチａＤ全通して接続され。In the figure, (1) is a commercial power supply, and (2) is a rectifier/smoothing circuit, which is connected through fuse aω and switch aD.
整流素子■、平滑チョークコイルｏ３）、平滑コンデン
サ■で構成されている。（１つは整流・平滑回路（２）
に接続された制限抵抗、（３）ばマグネトロン駆動用変
圧器、（４）は変圧器（３）に接続されたスナバ回路で
。It consists of a rectifying element (2), a smoothing choke coil (o3), and a smoothing capacitor (2). (One is the rectification/smoothing circuit (2)
(3) is the magnetron drive transformer, and (4) is the snubber circuit connected to the transformer (3).
コンデンサ（ｒ？）、抵抗（ト）、ダイオード（■で構
成されろ。（５）は変圧Ｎ（３）に直列接続された半導
体スイッチング素子、（Ｑは半導体スイッチング素子］
５）に並列接続された転流ダイオードであり、変圧器（
３）。Consists of a capacitor (r?), a resistor (t), and a diode (■. (5) is a semiconductor switching element connected in series to the transformer N (3), (Q is a semiconductor switching element)
5) is a commutating diode connected in parallel to the transformer (
3).
スナバ回路（４）、半導体スイッチング素子（５）と共
にインバータ回＃ （８）を構成する。半導体スイッチ
ング素子（５）のベースには駆動回路（７）が接続され
る。Together with the snubber circuit (4) and the semiconductor switching element (5), the inverter circuit # (8) is configured. A drive circuit (7) is connected to the base of the semiconductor switching element (5).
変圧器（３）の２次側の第１の巻線には高圧コンデンサ
［相］が接続され、高圧ダイオード（２１）と共に半波
倍電圧整流回路（８）を構成し、カットオフダイオード
（２２）、インダクタ（２９）を通してマグネトロン（
９）に高電圧を供給する。また、変圧器（３）の２次側
の第２の巻線には同じくマグネトロン（９）のフィラメ
ントが接続され、マグネトロン（９）にフィラメント電
圧を供給する。（２３） 、 （２４）は マグネトロ
ン陽極電流検出抵抗であす、（２３）は出力制御用検出
兼過電流検出抵抗、 （２４）ばマグネトロンビーク電
流制限抵抗としての役目を果す。また、変圧器（３）の
２次側の第３の巻！９１（４６）は過電圧検出巻線であ
り。A high-voltage capacitor [phase] is connected to the first winding on the secondary side of the transformer (3), which together with a high-voltage diode (21) constitutes a half-wave voltage doubler rectifier circuit (8), and a cut-off diode (22). ), the magnetron (
9) Supply high voltage to. Further, the filament of the magnetron (9) is similarly connected to the second winding on the secondary side of the transformer (3), and a filament voltage is supplied to the magnetron (9). (23) and (24) are magnetron anode current detection resistors, (23) serves as an output control detection and overcurrent detection resistor, and (24) serves as a magnetron peak current limiting resistor. Also, the third winding on the secondary side of the transformer (3)! 91 (46) is an overvoltage detection winding.
整流ダイオード（４９）を通して過電圧検出回路（２５
）に入力され、過電圧検出回路（２５）の出力は駆動回
路（７）に入力され２駆動回路（７）の出力によって半
導体スイッチング素子（５）を駆動させる。The overvoltage detection circuit (25) is connected through the rectifier diode (49).
), the output of the overvoltage detection circuit (25) is input to the drive circuit (7), and the output of the two drive circuits (7) drives the semiconductor switching element (5).
次に、上記一実施例の動作を第２図に示すＩＪ御タイミ
ング波形図を用いて説明する。Next, the operation of the above embodiment will be explained using the IJ control timing waveform diagram shown in FIG.
半導体スイッチング素子（５）のベース−エミッタ間Ｉ
こ第２図ｂ）に示す正の電圧（３９）を加えると 半導
体スイッチング素子（５）がＯＮＬ、、変圧器（３）に
は第２図（ｂ）に示すＶｄｃなる直流電圧（４０）が加
わり。Base-emitter I of semiconductor switching element (5)
When the positive voltage (39) shown in Fig. 2(b) is applied, the semiconductor switching element (5) turns ONL, and the transformer (3) receives a DC voltage (40) of Vdc shown in Fig. 2(b). Join.
第２図（ｅ）に示す電流（４１）が変圧器（３）に流れ
る。A current (41) shown in FIG. 2(e) flows through the transformer (3).
このとき、半導体スイッチング素子（５）のコレクタ電
流ＩＣ，コレクターエミッタ間電圧Ｖｅｅはそれぞれ第
２図（ｅ） 、 （ｃｌ）に示す（４２） 、 （４３
）のようになる。At this time, the collector current IC and collector-emitter voltage Vee of the semiconductor switching element (5) are (42) and (43) shown in FIG. 2(e) and (cl), respectively.
)become that way.
この半導体スイッチング素子のペースエミッタ間に正の
電圧（３９）が加わる期間、即ち半導体スイッチング素
子（５）がＯＮＬ、ている期間に変圧器（３）の１次側
に発生する直流電圧Ｖｄｃを変圧！ｉ！！ （３１にて
昇圧して２次側の第１の巻線に数千Ｋｖの高圧を発生さ
せる。この高電圧を高圧コンデンサ（至）、高圧ダイオ
ード（２１）からなる半波倍電圧１１流回路であるマグ
ネトロン駆動回路（８）によりマグネトロン（９）を駆
動させるのに必要な半波倍電圧に変換しマグネトロン（
９）に電流を流しマグネトロン（９）を駆動させる。During the period when a positive voltage (39) is applied between the pace emitters of this semiconductor switching element, that is, during the period when the semiconductor switching element (5) is ONL, the DC voltage Vdc generated on the primary side of the transformer (3) is transformed. ! i! ! (Step 31 boosts the voltage and generates a high voltage of several thousand Kv in the first winding on the secondary side. This high voltage is passed through a half-wave voltage doubler 11 current circuit consisting of a high voltage capacitor (to) and a high voltage diode (21). The magnetron drive circuit (8) converts the voltage into a half-wave doubler voltage necessary to drive the magnetron (9).
9) to drive the magnetron (9).
次に第２図（＆）で示すように半導体スイッチング素子
＜５１のペースエミッタ間に負の電圧（５］）を加える
と半導体スイッチング素子（５）が逆バイアスされＯＦ
ＦするＯ半導体スイッチング素子（５）がＯＦＦすると
そのコレクタ電流Ｉｃはゼロとなり、コレクターエミッ
タ間電圧Ｖｃｅは変圧器（３）の励磁回路に蓄えられて
いた電磁エネルギーが変圧器−次巻線と並列に接続され
たダイオード（ｅ、コンデンサ（〕。Next, as shown in FIG. 2 (&), when a negative voltage (5) is applied between the pace emitters of the semiconductor switching element <51, the semiconductor switching element (5) is reverse biased and OF
When the F-O semiconductor switching element (5) is turned off, its collector current Ic becomes zero, and the collector-emitter voltage Vce is caused by the electromagnetic energy stored in the excitation circuit of the transformer (3) being parallel to the transformer-next winding. Diode (e, capacitor ()) connected to.
抵抗（０とからなるスナバ回路（４）に放電され変圧器
（３）の磁束がリセットされる。この時、変圧１ｉ（３
）のリセット電圧が変圧器（３）の２次側の巻線に現わ
れるが、半波倍電圧整流回路であるマグネトロン駆動回
路（８）の高圧コンデンサ（至）を充電する方向に高圧
ダイオード（２１）が導通してマグネトロン（９）には
電流が流れない。次に半導体スイッチング素子（５）の
Ｖｃｅの任意の点０点で再びＶｂｅに正の電圧（３９）
を加えて半導体スイッチング素子（５）をＯＮ状態にさ
せる。以上の動作を繰り返すことによりマグネトロンを
駆動させて高周波加熱装置から高周波を発生させて食品
を加熱することが出来る。It is discharged to the snubber circuit (4) consisting of the resistor (0) and the magnetic flux of the transformer (3) is reset. At this time, the transformer 1i (3
) appears in the secondary winding of the transformer (3), but the high voltage diode (21 ) is conductive and no current flows through the magnetron (9). Next, at any point 0 of Vce of the semiconductor switching element (5), a positive voltage (39) is applied to Vbe again.
is added to turn on the semiconductor switching element (5). By repeating the above operations, it is possible to drive the magnetron and generate high frequency waves from the high frequency heating device to heat the food.
第３図はその高周波出力相関図であり、 （４４）に示
すが如く半導体スイッチング素子（５）のＯＮ時間（ｔ
ｏｎ）を長くしていくと高周波出力は高くなる。Figure 3 is a high-frequency output correlation diagram, and as shown in (44), the ON time (t) of the semiconductor switching element (5)
on), the high frequency output increases.
半導体スイッチング素子（５）のＯＦＦ時間は、駆動回
路より出力するＶｂｅの逆バイアス電圧がかかる時間を
任意に設定出来るため、高周波出力とスイッチング周波
数の関係は第４図（４５）に示すように比例ａ２反比例
す、一定Ｃと自由に設定可能である。Since the OFF time of the semiconductor switching element (5) can be arbitrarily set for the time during which the reverse bias voltage of Vbe output from the drive circuit is applied, the relationship between the high frequency output and the switching frequency is proportional as shown in Figure 4 (45). A2 can be freely set to be inversely proportional to constant C.
また倍電圧整流回路（８）とマグネトロン（９）の間に
インダクタ（２９）を接続することにより、マグネトロ
ン（９）へ効率よく安定して電力を供給し、またマグネ
トロン（９）のピーク電流値を下げるようにしている。In addition, by connecting an inductor (29) between the voltage doubler rectifier circuit (8) and the magnetron (9), power can be efficiently and stably supplied to the magnetron (9), and the peak current value of the magnetron (9) can be I'm trying to lower it.
以上のようにこの発明によれば２倍電圧整流回路とマグ
ネトロンとの間にインダクタを接続することにより、マ
グネトロンへ安定して電力を供給することが出来、さら
にマグネトロンの管内放電。As described above, according to the present invention, by connecting an inductor between the double voltage rectifier circuit and the magnetron, power can be stably supplied to the magnetron, and furthermore, the tube discharge of the magnetron can be reduced.
管外放電等の異常サージ電流を平滑することが出来るこ
とから変圧器の１次側の異常サージから半導体スイッチ
ング素子を保護することが出来、さらにコンデンサの充
電電流がインダクタに流れないためｌ流容量Ｑ低い、定
格の低い、小型で安価な装置を得ることが出来る。Since abnormal surge currents such as extra-tube discharges can be smoothed, semiconductor switching elements can be protected from abnormal surges on the primary side of the transformer, and since the charging current of the capacitor does not flow to the inductor, the current capacity can be reduced. A small and inexpensive device with low Q and low ratings can be obtained.
第１図はこの発明による高周波加熱装置の一実施例の制
御回路図、第２図は第１図に示す一実施例の制御タイミ
ング波形図、第３図及び第４図は第１図に示す一実施例
の高周波出力相関図、第５図は従来の高周波加熱装置の
制御回路図である。
図において、（１）は商用電源、（２）は整流・平滑回
路、（３）は変圧器、（５）は半導体スイッチング素子
。
（７）は駆動回路、（８）は倍電圧整流回路、（９）は
マグネトロン、 （２９）はインダクタである。
なお１図中同一符号は同−又は相当部分を示す。
田
第２図FIG. 1 is a control circuit diagram of an embodiment of the high-frequency heating device according to the present invention, FIG. 2 is a control timing waveform diagram of the embodiment shown in FIG. 1, and FIGS. 3 and 4 are shown in FIG. 1. FIG. 5, which is a high-frequency output correlation diagram of one embodiment, is a control circuit diagram of a conventional high-frequency heating device. In the figure, (1) is a commercial power supply, (2) is a rectifier/smoothing circuit, (3) is a transformer, and (5) is a semiconductor switching element. (7) is a drive circuit, (8) is a voltage doubler rectifier circuit, (9) is a magnetron, and (29) is an inductor. Note that the same reference numerals in each figure indicate the same or corresponding parts. Figure 2
Claims (1)
路、この整流・平滑回路に接続された変圧器、この変圧
器に直列に接続された半導体スイッチング素子、この半
導体スイッチング素子を駆動する駆動回路、前記変圧器
の２次側に接続された倍電圧整流回路、この倍電圧整流
回路によって高圧直流電力が供給されるマグネトロンを
備え、前記倍電圧整流回路と前記マグネトロンとの間に
インダクタを接続するようにしたこと特徴とする高周波
加熱装置。A rectifier/smoothing circuit that rectifies and smoothes commercial power to create DC power, a transformer connected to this rectifier/smoothing circuit, a semiconductor switching element connected in series to this transformer, and a drive that drives this semiconductor switching element. a voltage doubler rectifier circuit connected to the secondary side of the transformer, a magnetron to which high voltage DC power is supplied by the voltage doubler rectifier circuit, and an inductor connected between the voltage doubler rectifier circuit and the magnetron. A high frequency heating device that is characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29664889A JPH03156877A (en) | 1989-11-15 | 1989-11-15 | High-frequency heating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29664889A JPH03156877A (en) | 1989-11-15 | 1989-11-15 | High-frequency heating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03156877A true JPH03156877A (en) | 1991-07-04 |
Family
ID=17836262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29664889A Pending JPH03156877A (en) | 1989-11-15 | 1989-11-15 | High-frequency heating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03156877A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0850990A (en) * | 1994-08-08 | 1996-02-20 | Matsushita Electric Ind Co Ltd | Magnetron driving power supply |
| JP2006202670A (en) * | 2005-01-24 | 2006-08-03 | Yosio Electronic Co | Magnetron power supply device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS642395B2 (en) * | 1979-06-05 | 1989-01-17 | Ikeda Bussan Co |
-
1989
- 1989-11-15 JP JP29664889A patent/JPH03156877A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS642395B2 (en) * | 1979-06-05 | 1989-01-17 | Ikeda Bussan Co |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0850990A (en) * | 1994-08-08 | 1996-02-20 | Matsushita Electric Ind Co Ltd | Magnetron driving power supply |
| JP2006202670A (en) * | 2005-01-24 | 2006-08-03 | Yosio Electronic Co | Magnetron power supply device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4189663A (en) | Direct current ballasting and starting circuitry for gaseous discharge lamps | |
| US4104715A (en) | Alternating current to alternating current converter apparatus | |
| US3753071A (en) | Low cost transistorized inverter | |
| US4503362A (en) | Frequency stabilized, gain controlled ballast system | |
| JPS62107684A (en) | Dc-ac converter | |
| JP2691626B2 (en) | Switching power supply for high frequency heating equipment | |
| GB2072968A (en) | Power supply device | |
| KR940008029B1 (en) | Power supply for driving magnetron | |
| EP0085505A1 (en) | Electronic ballast system for gas discharge tubes | |
| JPH0947022A (en) | Dc converter | |
| JPH03156877A (en) | High-frequency heating device | |
| JP2001178127A (en) | Switching power supply circuit | |
| JPH03156876A (en) | High-frequency heating device | |
| JPH03257789A (en) | High frequency heating device | |
| JPH03257788A (en) | High frequency heating device | |
| JPH0740720B2 (en) | Switching power supply for multi-scan television receiver | |
| JP3259337B2 (en) | Power converter | |
| JPH01236593A (en) | High frequency heating device | |
| JPH03156880A (en) | High-frequency heating device | |
| JPH03156886A (en) | High-frequency heating device | |
| JPH06205582A (en) | Switching power supply | |
| JPH0586131B2 (en) | ||
| JPH03156879A (en) | High-frequency heating circuit | |
| JPH03156881A (en) | High-frequency heating device | |
| JPH0359989A (en) | High-frequency heating device |