JPH03142317A - Optical gyro - Google Patents
Optical gyroInfo
- Publication number
- JPH03142317A JPH03142317A JP28147089A JP28147089A JPH03142317A JP H03142317 A JPH03142317 A JP H03142317A JP 28147089 A JP28147089 A JP 28147089A JP 28147089 A JP28147089 A JP 28147089A JP H03142317 A JPH03142317 A JP H03142317A
- Authority
- JP
- Japan
- Prior art keywords
- optical
- optical waveguide
- thin film
- receiving element
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 132
- 239000004065 semiconductor Substances 0.000 claims abstract description 61
- 239000010409 thin film Substances 0.000 claims abstract description 48
- 239000013078 crystal Substances 0.000 claims abstract description 32
- 150000001875 compounds Chemical class 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000001514 detection method Methods 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 15
- 229910052710 silicon Inorganic materials 0.000 abstract description 15
- 239000010703 silicon Substances 0.000 abstract description 15
- 230000008878 coupling Effects 0.000 abstract description 8
- 238000010168 coupling process Methods 0.000 abstract description 8
- 238000005859 coupling reaction Methods 0.000 abstract description 8
- 230000010287 polarization Effects 0.000 abstract 1
- 239000013307 optical fiber Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000000644 propagated effect Effects 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- JSILWGOAJSWOGY-UHFFFAOYSA-N bismuth;oxosilicon Chemical compound [Bi].[Si]=O JSILWGOAJSWOGY-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
Landscapes
- Gyroscopes (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野1
本発明は、光導波路コイル内を相互に反対方向に進行す
るレーザ光相互の位相差に基づいて、該光導波路コイル
の固定されている被検出体の回転角速度を検出する光ジ
ャイロに関する。Detailed Description of the Invention [Industrial Application Field 1] The present invention is a method for controlling a fixed cover of an optical waveguide coil based on the phase difference between laser beams traveling in mutually opposite directions within the optical waveguide coil. This invention relates to an optical gyro that detects the rotational angular velocity of a detection object.
[従来の技術]
従来より、第6図に示すように、レーザ光源72から出
射されたレーザ光をビームスプリッタ76により二つに
分岐し、一方のレーザ光を、結合レンズ78aを介して
光導波路80により導いて、光フアイバコイル82の一
端へ出射して時計方向へ伝播させ、他方のレーザ光を、
結合レンズ78bを介して光位相変調器84に伝播し、
光位相変調器84により位相変調したうえで、光フアイ
バコイル82の他端へ出射して反時計方向へ伝播させる
ことにより、光フアイバコイル82内を相互に反対方向
に伝播させると共に、光フアイバコイル82の両端のそ
れぞれから入射されるレーザ光をビームスプリッタ76
により統合したうえで、受光器74により受光して、二
つのレーザ光の位相差に応じた電気信号を出力するよう
に構成された光ジャイロ70が、知られている。[Prior Art] Conventionally, as shown in FIG. 6, a laser beam emitted from a laser light source 72 is split into two by a beam splitter 76, and one of the laser beams is sent to an optical waveguide via a coupling lens 78a. 80, the laser beam is emitted to one end of the optical fiber coil 82 and propagated clockwise, and the other laser beam is
propagates to the optical phase modulator 84 via the coupling lens 78b,
After being phase modulated by the optical phase modulator 84, the light is output to the other end of the optical fiber coil 82 and propagated counterclockwise, thereby causing the optical fiber coil 82 to propagate in mutually opposite directions. The laser beams incident from both ends of the beam splitter 76
An optical gyro 70 is known that is configured to integrate two laser beams, receive the light with a light receiver 74, and output an electric signal according to the phase difference between the two laser beams.
この光ジャイロ70では、光ジャイロ70が搭載された
被検出体(図示路)が、光フアイバコイル82のコイル
形成面において回転角速度Ωで回転したとき、時計方向
に進むレーザ光CWと反時計方向に進むレーザ光CCW
との間に、次式で表される位相差Δφを生じる。In this optical gyro 70, when the object to be detected (the path shown in the figure) on which the optical gyro 70 is mounted rotates at a rotational angular velocity Ω on the coil forming surface of the optical fiber coil 82, the laser beam CW traveling in the clockwise direction and the laser beam CW traveling in the counterclockwise direction Laser light CCW that advances to
A phase difference Δφ expressed by the following equation is generated between
Δφ=4πLRΩ/(Cλ)
ただし、しは光フアイバコイルの長さ、Rは光フアイバ
コイルの半径、Cは真空中での光速度、λは光の波長で
ある。Δφ=4πLRΩ/(Cλ) where: is the length of the optical fiber coil, R is the radius of the optical fiber coil, C is the speed of light in vacuum, and λ is the wavelength of the light.
そして、受光器74が、位相差Δφに応じて電気信号を
出力すると、この電気信号に基づいて、電気信号処理回
路(図示路)が被検出体の回転角速度Ωを検出する。し
かし、被検出体の回転角速度が小さいとき、生じる位相
差Δφが極めて小さく、受光器74の電気的出力として
現れない。そのため、この光ジャイロ70では、反時計
方向に進むレーザ光CCWを、光位相変調器84により
位相変調することで検出感度を向上させているわけであ
る。Then, when the light receiver 74 outputs an electrical signal according to the phase difference Δφ, an electrical signal processing circuit (the path shown in the figure) detects the rotational angular velocity Ω of the detected object based on this electrical signal. However, when the rotational angular velocity of the object to be detected is small, the resulting phase difference Δφ is extremely small and does not appear as an electrical output of the light receiver 74. Therefore, in this optical gyro 70, the detection sensitivity is improved by phase modulating the laser light CCW traveling in the counterclockwise direction using the optical phase modulator 84.
したがって、公知のように、受光器74の電圧出力には
、直流成分と共にベッセル関数で表される高次の成分が
重畳されおり、この電圧出力を同期検波すると、回転角
速度Ωに応じた電圧信号V口が得られる。この電圧信号
VOは、次式で表さる。Therefore, as is well known, the voltage output of the photodetector 74 is superimposed with a DC component as well as a high-order component expressed by a Bessel function, and when this voltage output is synchronously detected, a voltage signal corresponding to the rotational angular velocity Ω is generated. A V-shaped mouth is obtained. This voltage signal VO is expressed by the following equation.
VD=Csin(Δφ)
=Csin (4yr L RΩ/(Cλ))ただし、
Cは所定の定数である。VD=Csin(Δφ) =Csin (4yr L RΩ/(Cλ)) However,
C is a predetermined constant.
このように位相変調により検出感度を上げると共に受光
器74の出力電気信号を同期検波することで被検出体の
微少な動きも検出可能になる。In this way, by increasing the detection sensitivity through phase modulation and synchronously detecting the output electrical signal of the light receiver 74, even minute movements of the object to be detected can be detected.
ところで、この種の光ジャイロでは、独立した構成要素
として造られたレーザ光源72、受光器74及び光学系
76〜82などを組み立てて作製するので、振動や温度
変化により各構成要素の位置ズレやレーザ光源と光導波
路との接合の不具合が起こる。そのため、レーザ光源7
2(あるいは受光器74)と光導波路80との光結合効
率や、受光器74の受光面での二つのレーザ光CW及び
CCWの重なり面積が変動し、受光器74の出力する電
圧信号がドリフトするといった問題が起こる。By the way, this type of optical gyro is manufactured by assembling the laser light source 72, the light receiver 74, the optical systems 76 to 82, etc., which are made as independent components, so there is a risk of misalignment of each component due to vibration or temperature changes. A problem occurs in the bonding between the laser light source and the optical waveguide. Therefore, the laser light source 7
2 (or the light receiver 74) and the optical waveguide 80 and the overlapping area of the two laser beams CW and CCW on the light receiving surface of the light receiver 74 change, and the voltage signal output from the light receiver 74 drifts. Problems such as this occur.
この問題を解決するために、強誘電体にオブ酸すチウム
L+NbO3、酸化珪素ビスマスBi2SiO2など)
の基板の上に、半導体発光素子及び受光素子を貼り付け
て、あるいは化合物半導体(ガリウムヒ素GaAs、イ
ンジウムリンInPなど)の基板の上に、化合物半導体
の薄膜を結晶成長させたものを積層することによって発
光素子及び受光素子を形成して(たとえ1′L ガリ
ウム・アルミニウムヒ素GaAQAs系の半導体発光素
子及び受光素子)、また光導波路については、同じ化合
物半導体基板上に、強誘電体の薄膜を形成し、その薄膜
をチタンTI熱拡散法により高屈折率にして作製して、
各素子及び光学系を集積化することで、振動や温度変化
の影響を防ぐ光フアイバジャイロが提案されている(特
開昭58−216909号公報)。To solve this problem, ferroelectric materials such as lithium oxide L+NbO3, bismuth silicon oxide Bi2SiO2, etc.
A semiconductor light-emitting element and a light-receiving element are pasted on a substrate, or a thin film of a compound semiconductor is laminated by crystal growth on a substrate of a compound semiconductor (gallium arsenide GaAs, indium phosphide InP, etc.). (For example, a 1'L gallium aluminum arsenide GaAQAs semiconductor light emitting element and a light receiving element) are formed by forming a ferroelectric thin film on the same compound semiconductor substrate for an optical waveguide. Then, the thin film was made with a high refractive index by the titanium TI thermal diffusion method,
An optical fiber gyro that prevents the effects of vibration and temperature changes by integrating each element and optical system has been proposed (Japanese Patent Laid-Open No. 58-216909).
[発明が解決しようとする課題]
しかし、上記光フアイバジャイロにおいては、別に作製
された半導体発光素子及び受光素子の単体を基板上に貼
り付けるため、半導体発光素子及び受光素子のへき開面
(レーザ光の発光面あるいは受光面)と光導波路の端面
との密着や相互の高精度の位置合わせが困難で、光結合
効率の低下や光軸のズレを充分に防ぐことができないと
いう問題があった
また、化合物半導体基板には、その上に異種の化合物半
導体を結晶成長させると、結晶内に格子欠陥を生じやす
いという性質があるために、形成された薄膜には壊れや
すいという問題があったさらに、化合物半導体基板の上
に強誘電体の薄膜を形成し、この薄膜に熱拡散やイ・オ
ン注入などのドーピングを行うと、薄膜に歪みが生じる
といったことがあり、化合物半導体の基板上に、強誘電
体の薄膜で光導波路や他の光素子を形成することには、
問題がある。[Problems to be Solved by the Invention] However, in the optical fiber gyro described above, since the semiconductor light emitting element and the light receiving element, which are manufactured separately, are attached on the substrate, the cleavage plane (laser light) of the semiconductor light emitting element and the light receiving element is Another problem was that it was difficult to bring the light-emitting surface or light-receiving surface of the optical waveguide into close contact with the end surface of the optical waveguide and to align them with high precision, and it was not possible to sufficiently prevent a decrease in optical coupling efficiency and misalignment of the optical axis. Furthermore, compound semiconductor substrates have the property that lattice defects are likely to occur in the crystals when a compound semiconductor of a different type is grown on the substrate, so the formed thin film is easily broken. When a ferroelectric thin film is formed on a compound semiconductor substrate and this thin film is doped by thermal diffusion or ion implantation, distortion may occur in the thin film. Forming optical waveguides and other optical devices with dielectric thin films requires
There's a problem.
そこで、本発明は、光結合効率の低下や光軸のズレがな
く集積化にも無理がない光ジャイロを提供することを目
的としてなされた。SUMMARY OF THE INVENTION Therefore, the present invention has been made with the object of providing an optical gyro that does not cause a decrease in optical coupling efficiency or shift of the optical axis, and is easy to integrate.
[課題を解決するための手段]
本発明の要旨とするところは、
光導波路コイルの両端のそれぞれへレーザ光を出射する
と共に、該両端から入射されるレーザ光相互の位相差に
基づいて、該光導波路コイルの固定されている被検出体
の回転角速度を検出する光ジャイロであって、
元素半導体単結晶の単一基板の上に超格子構造をなす化
合物半導体結晶を成長させて形成した薄膜からなる半導
体発光素子及び半導体受光素子と、上記単一基板の上に
結晶成長で形成された強誘電体又は化合物半導体の薄膜
からなる光導波路コイルと、
該光導波路コイルと同一の薄膜からなり、該光導波路コ
イルの両端のそれぞれと上記半導体発光素子及び半導体
受光素子とを結ぶ光導波路と、を備えたことを特徴とす
る光ジャイロにある。[Means for Solving the Problems] The gist of the present invention is to emit laser light to both ends of an optical waveguide coil, and to emit laser light to each end of the optical waveguide coil based on the mutual phase difference between the laser lights incident from both ends. This is an optical gyro that detects the rotational angular velocity of a detected object to which an optical waveguide coil is fixed, and is made from a thin film formed by growing a compound semiconductor crystal with a superlattice structure on a single substrate of an elemental semiconductor single crystal. an optical waveguide coil consisting of a thin film of ferroelectric or compound semiconductor formed by crystal growth on the single substrate; and an optical waveguide coil consisting of the same thin film as the optical waveguide coil; An optical gyro characterized by comprising an optical waveguide connecting each of both ends of the optical waveguide coil to the semiconductor light emitting device and the semiconductor light receiving device.
[作用]
以上のように構成された本発明の光ジャイロによれば、
半導体発光素子の発光するレーザ光は、光導波路を経て
光導波路コイルのそれぞれの端部へ進み、光導波路コイ
ル内を相互に反対に伝播する。そして、光導波路コイル
の端部のそれぞれから光導波路を経て半導体受光素子に
至り受光される。[Function] According to the optical gyro of the present invention configured as described above, the laser light emitted by the semiconductor light emitting element travels through the optical waveguide to each end of the optical waveguide coil, and mutually travels within the optical waveguide coil. propagate in the opposite direction. The light is then received from each end of the optical waveguide coil through the optical waveguide to the semiconductor light receiving element.
ここで、超格子とは、異なる元素または化合物の格子を
積層して形成した結晶格子であって、元素半導体と化合
物半導体との格子不整合によって発生する転移(化合物
半導体結晶のすべりによる変形)を抑制する作用をもつ
。それゆえ、超格子構造をなす化合物半導体の結晶は、
格子定数の異なる元素半導体単結晶の基板の上でも、規
則正しく成長することができるのである。したがって、
元素半導体単結晶の基板の上で、格子欠陥のない良質な
化合物半導体の薄膜を形成することができ、その薄膜を
積層することで半導体発光素子及び半導体受光素子を造
ることができる。Here, a superlattice is a crystal lattice formed by stacking lattices of different elements or compounds, and is a crystal lattice that is formed by stacking lattices of different elements or compounds, and is a superlattice that supports dislocations caused by lattice mismatch between elemental semiconductors and compound semiconductors (deformation due to slipping of compound semiconductor crystals). It has a suppressive effect. Therefore, a compound semiconductor crystal with a superlattice structure is
It is possible to grow regularly even on substrates of elemental semiconductor single crystals with different lattice constants. therefore,
A high-quality compound semiconductor thin film free of lattice defects can be formed on an elemental semiconductor single crystal substrate, and by stacking these thin films, semiconductor light-emitting devices and semiconductor light-receiving devices can be manufactured.
また、元素半導体単結晶の基板の上に、化合物半導体又
は強誘電体の薄膜を形成して光導波路コイル及び光導波
路を造るのは、格子欠陥がない規則正しい結晶構造をも
つ薄膜ができ、熱拡散やイオン注入によって上記薄膜に
歪みが生じることがないからである。In addition, forming optical waveguide coils and optical waveguides by forming thin films of compound semiconductors or ferroelectrics on single-crystal substrates of elemental semiconductors produces thin films with a regular crystal structure without lattice defects, which allows thermal diffusion. This is because the thin film is not distorted by ion implantation or ion implantation.
[実施例] 以下に本考案の実施例を図面と共に説明する。[Example] Embodiments of the present invention will be described below with reference to the drawings.
まず、第1図は本発明を適用した実施例の光ジャイロの
光学的構成を表す説明図である。First, FIG. 1 is an explanatory diagram showing the optical configuration of an optical gyro according to an embodiment of the present invention.
図に示すように、光ジャイロ1は、N元素及びB元素な
どをドーピングしたn形あるいはp形のシリコン単結晶
基板(以下、単にシリコン基板という)3の上に形成さ
れた光集積回路5とセンシングコイル7とから構成さ札
図示せぬ被検出体に搭載されている。なお、第1図は
、センシングコイル7に対して光集積回路5を拡大して
表している。As shown in the figure, the optical gyro 1 includes an optical integrated circuit 5 formed on an n-type or p-type silicon single crystal substrate (hereinafter simply referred to as a silicon substrate) 3 doped with N elements, B elements, etc. A tag consisting of a sensing coil 7 is mounted on an object to be detected (not shown). Note that FIG. 1 shows the optical integrated circuit 5 enlarged with respect to the sensing coil 7.
光集積回路5は、高コヒーレントなレーザ光を発光する
半導体レーザ素子(以下、単にレーザ素子という)10
、光電変換を行う半導体受光素子(以下、単に受光素子
という)12、レーザ光を所定経路に導く光導波路14
・第1分岐光導波路14a・第2分岐光導波路14b、
レーザ光を分岐あるいは統合する方向性結合器16及び
所定周波数でレーザ光を変調する位相変調器18から構
成されている。The optical integrated circuit 5 includes a semiconductor laser device (hereinafter simply referred to as a laser device) 10 that emits highly coherent laser light.
, a semiconductor light-receiving element (hereinafter simply referred to as a light-receiving element) 12 that performs photoelectric conversion, and an optical waveguide 14 that guides laser light to a predetermined path.
・First branch optical waveguide 14a ・Second branch optical waveguide 14b,
It is composed of a directional coupler 16 that branches or integrates laser light, and a phase modulator 18 that modulates the laser light at a predetermined frequency.
レーザ素子10は、周知のように、活性層をクラッド層
で挟んで相互を接合した二重へテロ構造(図示路)をな
し、クラッド層の表面(非接合面)に形成されている正
負電極に直流電流を通電すると活性層からレーザ光が出
射される。受光素子12は、周知のようにP形半導体と
n形半導体(図示路)とを接合したもので、接合面に光
があたると、その光の強弱に応じた電気信号を出力する
。As is well known, the laser element 10 has a double heterostructure (as shown) in which an active layer is sandwiched between cladding layers and bonded to each other, and positive and negative electrodes are formed on the surface (non-bonded surface) of the cladding layer. When a direct current is applied to the active layer, laser light is emitted from the active layer. As is well known, the light-receiving element 12 is a combination of a P-type semiconductor and an N-type semiconductor (shown in the figure), and when light hits the bonded surface, it outputs an electric signal depending on the intensity of the light.
光導波路14は、レーザ素子10から出射されたレーザ
光をセンシングコイル7の一端に導き、第1分岐光導波
路14aは、方向性結合器16により光導波路14から
分岐されたレーザ素子10からのレーザ光をセンシング
コイル7の他端に導き、第2分岐光導波路14bは、セ
ンシングコイル7の両端から、光導波路14と第1分岐
光導波路14aとのそれぞれを経て入射されたレーザ光
を統合して受光素子12に導く。The optical waveguide 14 guides the laser beam emitted from the laser element 10 to one end of the sensing coil 7, and the first branch optical waveguide 14a guides the laser beam emitted from the laser element 10 branched from the optical waveguide 14 by the directional coupler 16. The light is guided to the other end of the sensing coil 7, and the second branch optical waveguide 14b integrates the laser beams incident from both ends of the sensing coil 7 through the optical waveguide 14 and the first branch optical waveguide 14a. The light is guided to the light receiving element 12.
ここで、レーザ素子10及び受光素子12、各光導波路
14.14a、14bの材質ならび製造方法について説
明する。Here, the materials and manufacturing method of the laser element 10, the light receiving element 12, and each optical waveguide 14.14a, 14b will be explained.
まず、短波長帯域のレーザ光を使用する場合には、シリ
コン基板3上に、MOCVD (有機金属化学的気相成
長)法により、超格子構造をなす化合物半導体結晶を成
長させて形成した薄膜を積層(たとえば、GaAsの薄
膜とGaAQAsの薄膜とを積層)することで、レーザ
素子10及び受光素子12を造ると共に、シリコン基板
3上に強誘電体(L + NbO3,B i2s +
02など)を結晶成長させて形成した薄膜で各光導波路
14.14a、14bを造ることによって、レーザ素子
10及び受光素子12と光導波路14及び第2分岐光導
波路14bとを一体成形する。First, when using a laser beam in a short wavelength band, a thin film is formed by growing a compound semiconductor crystal having a superlattice structure on a silicon substrate 3 by MOCVD (metal-organic chemical vapor deposition). By laminating (for example, laminating a GaAs thin film and a GaAQAs thin film), the laser element 10 and the light receiving element 12 are manufactured, and ferroelectric materials (L + NbO3, B i2s +
By forming each of the optical waveguides 14.14a and 14b with a thin film formed by crystal growth of 02, etc.), the laser element 10, the light receiving element 12, the optical waveguide 14, and the second branch optical waveguide 14b are integrally molded.
一方、長波長帯域のレーザ光を使う場合、シリコン基板
3上に、MOCVD法により、化合物半導体(たとえば
、 1nP)の薄膜を形成し、この薄膜上に、超格子構
造をなす化合物半導体結晶を成長させて形成した薄膜を
積層(たとえば、1nPの薄膜とインジウム・ガリウム
ヒ素・リン1nGaAsPの薄膜などを積層)すること
で、レーザ素子10及び受光素子12表造石と共に、上
記化合物半導体の薄膜で各光導波路14.14a、14
bを造ることによって、レーザ素子10及び受光素子1
2と光導波路14及び第2分岐光導波路14bとを一体
成形する。On the other hand, when using a long wavelength band laser beam, a thin film of a compound semiconductor (for example, 1nP) is formed on the silicon substrate 3 by MOCVD, and a compound semiconductor crystal having a superlattice structure is grown on this thin film. By laminating the thin films formed in this manner (for example, laminating a 1nP thin film and a 1nGaAsP thin film of indium, gallium arsenide, and phosphorus), each layer is made of the compound semiconductor thin film, together with the surface stone of the laser element 10 and the light receiving element 12. Optical waveguide 14.14a, 14
By manufacturing the laser element 10 and the light receiving element 1
2, the optical waveguide 14, and the second branch optical waveguide 14b are integrally molded.
各光導波路14.14a、14bにライては、Tl熱拡
散法あるいはイオン注入により、上記の強誘電体の薄膜
あるいは化合物半導体の薄膜に高屈折率をもたせて単一
モード偏波面保存型の光導波路に形成されている。For each optical waveguide 14.14a, 14b, a single-mode polarization-maintaining optical waveguide is formed by imparting a high refractive index to the ferroelectric thin film or compound semiconductor thin film by Tl thermal diffusion method or ion implantation. It is formed into a wave path.
方向性結合器16は、光導波路14と第1分岐光導波路
14あるいは第2分岐光導波路14bとがレーザ光の波
長レベルの距離で近接している箇所を、それぞれ挟む形
に配設された二組の正負のプレーナ電極16aと16b
及び16cと16dからなり、それぞれのプレーナ電極
16a〜16dの正極16a、16c及び負極16b、
16dが反対に位置するように配設されているプレーナ
電極16a〜16dは、アルミニウムまたは金からなり
、強誘電体または化合物半導体の薄膜の上に、周知のフ
ォトグラフィ技術により形成されている。The directional coupler 16 includes two optical waveguides arranged to sandwich a portion where the optical waveguide 14 and the first branch optical waveguide 14 or the second branch optical waveguide 14b are close to each other at a distance equivalent to the wavelength of the laser beam. A pair of positive and negative planar electrodes 16a and 16b
and 16c and 16d, the positive electrodes 16a, 16c and negative electrodes 16b of each of the planar electrodes 16a to 16d,
The planar electrodes 16a to 16d, which are arranged such that electrodes 16d are located opposite to each other, are made of aluminum or gold and are formed on a thin film of ferroelectric or compound semiconductor by a well-known photography technique.
方向性結合器16(よ円偏光と直線偏光とを分離するビ
ームスプリッタとして動作するものであり、電圧を印加
されると、レーザ素子10からのレーザ光を二つに分岐
させると共にセンシングコイル7の両端から入射される
レーザ光を結合する。Directional coupler 16 (operates as a beam splitter that separates circularly polarized light and linearly polarized light, and when a voltage is applied, splits the laser light from the laser element 10 into two and splits the laser light from the sensing coil 7 Combines laser beams incident from both ends.
位相変調器18は、第2分岐光導波路12bのセンシン
グコイル7の一端の近傍に、第2光導波路12bfE挟
む形に配設された正負のプレーナ電極18a、18bか
らなり、プレーナ電極18a、18bに、信号処理電子
回路からの周波数fsの電圧信号が印加されると、電気
光学効果により第2分岐光導波路12bの屈折率が変化
し、この屈折率の変化によりレーザ光が変調周波数fO
で位相変調される。なお、位相変調器18は、光導波路
14側に設けてもよい。The phase modulator 18 consists of positive and negative planar electrodes 18a and 18b arranged near one end of the sensing coil 7 of the second branched optical waveguide 12b to sandwich the second optical waveguide 12bfE. , when a voltage signal with a frequency fs from a signal processing electronic circuit is applied, the refractive index of the second branch optical waveguide 12b changes due to the electro-optic effect, and this change in refractive index causes the laser light to change to a modulation frequency fO.
phase modulated. Note that the phase modulator 18 may be provided on the optical waveguide 14 side.
位相変調器18のプレーナ電極18a、18bは、方向
性結合器16のプレーナ電極16a〜16dと同じ方法
で造られている。The planar electrodes 18a, 18b of the phase modulator 18 are made in the same way as the planar electrodes 16a-16d of the directional coupler 16.
センシングコイル7(上釜光導波路14.14a、14
bと同じく、Ti熱拡散法により、強誘電体の薄膜ある
いは化合物半導体の薄膜に高屈折率をもたせて単一モー
ド偏波面保存型の光導波路として、シリコン基板3上に
形成されている。また、センシングコイル7は、光集積
回路5の外部領域に形成されることで、総延長を充分長
くとって造られている。Sensing coil 7 (upper pot optical waveguide 14.14a, 14
Similarly to b, the Ti thermal diffusion method is used to impart a high refractive index to a ferroelectric thin film or a compound semiconductor thin film, and a single mode polarization-maintaining optical waveguide is formed on the silicon substrate 3. Further, the sensing coil 7 is formed in an external area of the optical integrated circuit 5, so that the total extension thereof is sufficiently long.
上記の光集積回路5は、シリコン基板3の外部に設けら
れた電子回路30に電圧信号を出力すると共に光集積回
路5の各素子が電子回路30からの駆動信号により駆動
される。The optical integrated circuit 5 described above outputs a voltage signal to an electronic circuit 30 provided outside the silicon substrate 3, and each element of the optical integrated circuit 5 is driven by a drive signal from the electronic circuit 30.
第2図に示すように、電子回路30は、レーザ素子10
の駆動電源回路32と、受光素子12からの電気信号を
検出し増幅する信号検出増幅回路34と、受光素子12
の出力レベルに応じてレーザ素子10の発光レベルを制
御する発光レベル制御回路36と、位相変調器18に発
振器38の発振周波数fsに基づいた電圧信号を出力す
る位相変調器駆動回路40と、検出増幅回路34からの
信号を周波数fsで同期検波する同期検波器42と、同
期検波器42の出力する信号の高周波成分を濾波する濾
波器44と、方向性結合器16を駆動する方向性結合器
駆動回路46とを主要部として構成さね、受光素子12
の出力する電気信号から被検出体の回転角速度に応じた
信号成分を検出する。上記の電子回路30の各回路の動
作については、位相変調方式光ジャイロの電子回路とし
て周知であるので、詳細は省略する。As shown in FIG. 2, the electronic circuit 30 includes a laser element 10
a drive power supply circuit 32, a signal detection amplification circuit 34 that detects and amplifies the electrical signal from the light receiving element 12,
a light emission level control circuit 36 that controls the light emission level of the laser element 10 according to the output level of the laser element 10; a phase modulator drive circuit 40 that outputs a voltage signal based on the oscillation frequency fs of the oscillator 38 to the phase modulator 18; A synchronous detector 42 that synchronously detects the signal from the amplifier circuit 34 at a frequency fs, a filter 44 that filters high frequency components of the signal output from the synchronous detector 42, and a directional coupler that drives the directional coupler 16. The driving circuit 46 is the main part, and the light receiving element 12
A signal component corresponding to the rotational angular velocity of the detected object is detected from the electrical signal outputted by the sensor. The operation of each circuit in the electronic circuit 30 described above is well known as an electronic circuit for a phase modulation type optical gyro, so the details will be omitted.
光ジャイロ1においては、レーザ素子10から出射され
レーザ光を方向性結合器9により二つに分岐し、一方の
レーザ光CWを、センシングコイル7の一端へ出射して
時計方向へ伝播させ、他方のレーザ光CCWを、位相変
調器18により位相変調して、センシングコイル7の他
端へ出射して反時計方向へ伝播させ、センシングコイル
7内色相互に反対方向に伝播させる。センシングコイル
7内を伝播する二つのレーザ光の間には、光ジャイロ1
を搭載した被検出体が回転すると、サグナック位相差が
起こる。この位相差をもつ二つのレーザ光の一方CWは
、位相変調器18で変調周波数fOにより位相変調され
、さらに方向性結合器9により他方のレーザ光CCWと
結合されたうえで、受光素子12に入射される。すると
、受光素子12は、二つのレーザ光のサグナック位相差
に応じた電気信号を出力する。In the optical gyro 1, a laser beam emitted from a laser element 10 is split into two by a directional coupler 9, one laser beam CW is emitted to one end of a sensing coil 7 and propagated clockwise, and the other laser beam is split into two by a directional coupler 9. The laser light CCW is phase modulated by the phase modulator 18, and is emitted to the other end of the sensing coil 7 and propagated counterclockwise, so that the colors within the sensing coil 7 are propagated in mutually opposite directions. An optical gyro 1 is placed between the two laser beams propagating within the sensing coil 7.
When the detected object equipped with the sensor rotates, a Sagnac phase difference occurs. One of the two laser beams CW having this phase difference is phase-modulated by the modulation frequency fO by the phase modulator 18, and further combined with the other laser beam CCW by the directional coupler 9, and then sent to the light receiving element 12. It is incident. Then, the light receiving element 12 outputs an electric signal according to the Sagnac phase difference between the two laser beams.
そして、電子回路30が、受光素子12からの電気信号
を同期検波して、回転角速度に応じた信号を出力する。Then, the electronic circuit 30 synchronously detects the electric signal from the light receiving element 12 and outputs a signal corresponding to the rotational angular velocity.
上記したように本実施例では、シリコン基板3上に、化
合物半導体の薄膜を結晶成長で形成したので、格子欠陥
がない規則正しい超格子の結晶構造をもつ薄膜ができる
。それゆえ、化合物半導体結晶の良質な薄膜で、半導体
レーザ素子10及び受光素子12を造ることができる。As described above, in this example, a compound semiconductor thin film was formed on the silicon substrate 3 by crystal growth, so that a thin film having a regular superlattice crystal structure free of lattice defects could be obtained. Therefore, the semiconductor laser device 10 and the light-receiving device 12 can be made of a high-quality thin film of compound semiconductor crystal.
さらに、良質な化合物半導体の薄膜に、あるいは強誘電
体を結晶成長させて形成した薄膜に、熱拡散やイオン注
入の処理を施しても、薄膜の結晶構造に歪が生じること
がないので、熱拡散法やイオン注入法により薄膜を高屈
折率にすることができる。Furthermore, even if thermal diffusion or ion implantation is applied to a thin film of a high-quality compound semiconductor or a thin film formed by growing ferroelectric crystals, the crystal structure of the thin film will not be distorted. A thin film can be made to have a high refractive index by a diffusion method or an ion implantation method.
また、レーザ素子10及び受光素子12と各光導波路1
4.14a、14bとセンシングコイル7とを、同一の
シリコン基板3に一体形成することができ、レーザ素子
10及び受光素子13と各光導波路14.14a、14
bとの光結合効率及び光軸合わせの精確度が向上し、さ
らに、振軌温度変化による光軸ズレや位相ズレが起こる
ことがない。また光学系を一体化したので、装置の小型
化に効を奏する。In addition, the laser element 10, the light receiving element 12, and each optical waveguide 1
4.14a, 14b and the sensing coil 7 can be integrally formed on the same silicon substrate 3, and the laser element 10, the light receiving element 13, and each optical waveguide 14.14a, 14
The optical coupling efficiency with b and the accuracy of optical axis alignment are improved, and furthermore, optical axis deviation and phase deviation due to vibrational temperature changes do not occur. Furthermore, since the optical system is integrated, it is effective in reducing the size of the device.
加えて、方向性結合器16、位相変調器]8も同一のシ
リコン基板3に一体形成したので、振動、温度による動
作点の変動が抑制される。In addition, since the directional coupler 16 and the phase modulator [8] are also integrally formed on the same silicon substrate 3, fluctuations in the operating point due to vibration and temperature are suppressed.
ここで、本実施例では電子回路30をシリコン基板3の
外部に設けると共にセンシングコイル7を光集積回路2
0に対して横並びの位置に配設したが、この(tL
第3図に示すように、電子回路30の各回路32〜46
を、シリコン基板3上に結晶成長で造った薄膜で形成し
た電子素子で構成し、光集積回路20と電子回路30と
を一体的に集積化することで光電子集積回路40を作製
し、これを取り巻くように、超微細加工技術(エツチン
グ、ドーピング、薄膜形成、プレーナ技術などのマイク
ロッアプリケーション技術)を用いてセンシングコイル
50を形成してもよい。Here, in this embodiment, the electronic circuit 30 is provided outside the silicon substrate 3, and the sensing coil 7 is provided outside the optical integrated circuit 3.
0, but this (tL
As shown in FIG. 3, each circuit 32 to 46 of the electronic circuit 30
An optoelectronic integrated circuit 40 is fabricated by integrally integrating the optoelectronic integrated circuit 20 and the electronic circuit 30, which is composed of an electronic element formed of a thin film made by crystal growth on a silicon substrate 3. Similarly, the sensing coil 50 may be formed using ultra-fine processing techniques (micro-application techniques such as etching, doping, thin film formation, planar technology, etc.).
このようにすると、センシングコイル50をより長くで
きので、検出感度を向上させることができる。また、光
集積回路20と電子回路30とを一つのICチップとす
ることができるので、光ジャイロ]をより小型にするこ
とができる。In this way, the sensing coil 50 can be made longer, so detection sensitivity can be improved. Further, since the optical integrated circuit 20 and the electronic circuit 30 can be integrated into one IC chip, the optical gyro can be made smaller.
なお、この場合には、センシングコイル50の一方の端
部からコイル本体への導入部分50aはコイルの上を跨
ぐようにして交差しなければならないが、以下の形成方
法にてセンシングコイル50の交差部分の立体構造を構
築できる。In this case, the introduction portion 50a from one end of the sensing coil 50 to the coil body must cross over the coil, but the crossing of the sensing coil 50 can be done by the following formation method. You can construct the three-dimensional structure of a part.
すなわち、第4図に示すように、まず、シリコン基板3
の上に塩化ケイ素S + CQ 4、塩化チタンT i
CQ aなどを出発原料にアルゴン(Ar)ガス雰囲
気において火炎中で加水分解を起こさせることで、酸化
シリコン5102の上層クラッド52a及び54aと下
層クラッド52b及び54bとを積層して形成し、次に
、TiO,リッチ・SiO2(屈折率に応じてTiO2
などの不純物を所定量だけドープすることによって造ら
kTi02を比較的多く含有するSiO2)の上層光導
波路(乗り越え部分の光導波路)50cと下層光導波路
(コイル形成部分の光導波路)50dとを積層して形成
することによって、センシングコイル50の交差部分の
立体構造を構築できる。That is, as shown in FIG. 4, first, the silicon substrate 3 is
Silicon chloride S + CQ 4, titanium chloride Ti on top
Upper claddings 52a and 54a and lower claddings 52b and 54b of silicon oxide 5102 are laminated and formed by using CQ a as a starting material and causing hydrolysis in a flame in an argon (Ar) gas atmosphere, and then , TiO, rich SiO2 (depending on the refractive index TiO2
An upper layer optical waveguide (optical waveguide in the overpassing portion) 50c (SiO2 containing a relatively large amount of kTi02) and a lower layer optical waveguide (optical waveguide in the coil forming portion) 50d are laminated by doping a predetermined amount of impurities such as By forming the sensing coil 50, the three-dimensional structure of the intersection portion of the sensing coil 50 can be constructed.
また、第5図に示すように、センシングコイル60をシ
リコン単結晶の円柱材70上に形成すると共に光電子集
積回路40を円柱の一部を基板としてそこに集積化して
形成してもよい。Alternatively, as shown in FIG. 5, the sensing coil 60 may be formed on a silicon single crystal cylinder 70, and the optoelectronic integrated circuit 40 may be integrated thereon using a part of the cylinder as a substrate.
この場合には、センシングコイル60の総延長を延ばす
ことができるので、回転角速度の検出感度を向上させる
ことができる。In this case, since the total length of the sensing coil 60 can be increased, the detection sensitivity of the rotational angular velocity can be improved.
[発明の効果]
以上説明したように、本発明によれば、同一の元素半導
体単結晶の基板の上に、超格子構造をなす化合物半導体
結晶を成長させて半導体発光素子及び半導体受光素子を
形成すると共に、化合物半導体又は強誘電体の薄膜を結
晶成長させて光導波路コイル及び光導波路を形成したの
で、半導体発光素子及び受光素子と光導波路コイル及び
光導波路とを、一体形成することができる。したがって
半導体発光素子及び受光素子と光導波路との結合効率及
び光軸合わせの精確度が向上し、光ジャイロを小型にで
きる。また、振動、温度変化による光軸ズレゃ位相ズレ
が起こることがない。[Effects of the Invention] As explained above, according to the present invention, a semiconductor light-emitting device and a semiconductor light-receiving device are formed by growing a compound semiconductor crystal having a superlattice structure on a substrate of the same elemental semiconductor single crystal. At the same time, since the optical waveguide coil and the optical waveguide are formed by crystal growth of a compound semiconductor or ferroelectric thin film, the semiconductor light emitting element and light receiving element, the optical waveguide coil and the optical waveguide can be integrally formed. Therefore, the coupling efficiency between the semiconductor light emitting element and the light receiving element and the optical waveguide and the accuracy of optical axis alignment are improved, and the optical gyro can be made smaller. Furthermore, optical axis deviations and phase deviations due to vibrations and temperature changes do not occur.
第1図は実施例の光ジャイロの光学的構成を表す説明図
、台2図は電子回路のブロック図、第3図はセンシング
コイルを光電子集積回路の周囲に形成した光ジャイロを
表す説明図、第4図はセンシングコイルの交差部分の立
体構造を表す説明図、第5図はシリコン円柱に設けられ
た光ジャイロを表す説明図、第6図は従来の光ジャイロ
を表す説明図である。Fig. 1 is an explanatory diagram showing the optical configuration of the optical gyro of the embodiment, Figure 2 is a block diagram of the electronic circuit, and Fig. 3 is an explanatory diagram showing the optical gyro in which a sensing coil is formed around an optoelectronic integrated circuit. FIG. 4 is an explanatory diagram showing the three-dimensional structure of the intersection of sensing coils, FIG. 5 is an explanatory diagram showing an optical gyro provided on a silicon cylinder, and FIG. 6 is an explanatory diagram showing a conventional optical gyro.
Claims (1)
と共に、該両端から入射されるレーザ光相互の位相差に
基づいて、該光導波路コイルの固定されている被検出体
の回転角速度を検出する光ジャイロであつて、 元素半導体単結晶の単一基板の上に超格子構造をなす化
合物半導体結晶を成長させて形成した薄膜からなる半導
体発光素子及び半導体受光素子と、上記単一基板の上に
結晶成長で形成された強誘電体又は化合物半導体の薄膜
からなる光導波路コイルと、 該光導波路コイルと同一の薄膜からなり、該光導波路コ
イルの両端のそれぞれと上記半導体発光素子及び半導体
受光素子とを結ぶ光導波路と、を備えたことを特徴とす
る光ジャイロ。[Claims] Laser light is emitted to both ends of the optical waveguide coil, and based on the phase difference between the laser beams incident from both ends, the detection target to which the optical waveguide coil is fixed is emitted. An optical gyro for detecting rotational angular velocity, which comprises a semiconductor light-emitting element and a semiconductor light-receiving element made of a thin film formed by growing a compound semiconductor crystal having a superlattice structure on a single substrate of an elemental semiconductor single crystal; an optical waveguide coil made of a thin film of ferroelectric or compound semiconductor formed by crystal growth on one substrate; and an optical waveguide coil made of the same thin film as the optical waveguide coil, each at each end of the optical waveguide coil and the semiconductor light emitting device. and an optical waveguide connecting the semiconductor light receiving element.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28147089A JPH03142317A (en) | 1989-10-27 | 1989-10-27 | Optical gyro |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28147089A JPH03142317A (en) | 1989-10-27 | 1989-10-27 | Optical gyro |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03142317A true JPH03142317A (en) | 1991-06-18 |
Family
ID=17639634
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28147089A Pending JPH03142317A (en) | 1989-10-27 | 1989-10-27 | Optical gyro |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH03142317A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5555088A (en) * | 1992-01-17 | 1996-09-10 | Commissariat A L'energie Atomique | Sagnac effect optical gyrometer having a fully integrated structure |
WO2003021188A1 (en) * | 2001-08-28 | 2003-03-13 | Seiko Epson Corporation | Optical gyroscope, and manufacturing method thereof |
JP2020522677A (en) * | 2017-05-30 | 2020-07-30 | カリフォルニア インスティチュート オブ テクノロジー | Integrated optical gyroscope with denoising |
-
1989
- 1989-10-27 JP JP28147089A patent/JPH03142317A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5555088A (en) * | 1992-01-17 | 1996-09-10 | Commissariat A L'energie Atomique | Sagnac effect optical gyrometer having a fully integrated structure |
WO2003021188A1 (en) * | 2001-08-28 | 2003-03-13 | Seiko Epson Corporation | Optical gyroscope, and manufacturing method thereof |
US6885456B2 (en) | 2001-08-28 | 2005-04-26 | Seiko Epson Corporation | Compact optical gyroscope and method of manufacturing the same |
CN1313802C (en) * | 2001-08-28 | 2007-05-02 | 精工爱普生株式会社 | Optical gyroscope and manufacturing method thereof |
JP2020522677A (en) * | 2017-05-30 | 2020-07-30 | カリフォルニア インスティチュート オブ テクノロジー | Integrated optical gyroscope with denoising |
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