JPH03138372A - Plasma cvd device - Google Patents
Plasma cvd deviceInfo
- Publication number
- JPH03138372A JPH03138372A JP27394889A JP27394889A JPH03138372A JP H03138372 A JPH03138372 A JP H03138372A JP 27394889 A JP27394889 A JP 27394889A JP 27394889 A JP27394889 A JP 27394889A JP H03138372 A JPH03138372 A JP H03138372A
- Authority
- JP
- Japan
- Prior art keywords
- plate
- power supply
- frequency power
- high frequency
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 19
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 16
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000012634 fragment Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 206010011224 Cough Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009461 vacuum packaging Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
プラズマＣＶＤ装置、特に並立した複数枚の板状電極に
ウェーハを固持せしめて炉芯管、内に挿入し、該板状電
極相互間に高周波プラズマを発生させて化学気相成長を
行うプラズマＣＶＤ装置における板状電極と高周波電極
との接続構造の改良に関し、
安定な電気的接続が得られて所定膜厚の被膜を再現性良
（成長することが可能な板状電極と高周波電極との接続
構造を提供することを目的とし、交互に異なる電位に接
続される並立した複数枚の板状電極にウェーハを固持せ
しめて炉芯管内に挿入し、該板状電極間に高周波プラズ
マを発生させて化学気相成長を行うブラズ°マＣＶＤ装
置において、該板状電極と該炉芯管内に外部から導入さ
れた高周波電源端子との電気的接続が、該板状電極から
導出された電源接続端子面を咳高周波電源端子上に載置
し、該板状電極の電源接続端子面若しくは高周波電源端
子の該電源接続端子面に対向する面の少なくとも一方に
設けた凹部によって該載置部に形成される外界から遮蔽
された空洞内において、例えば球面状を有し３次元方向
に移動可能な接触子を、前記凹部の底面に設けた該接触
子が滑合する凹状面部に圧接する構造等からなる電気的
接触機構を介してなされる構成を有する。[Detailed Description of the Invention] [Summary] A plasma CVD apparatus, in particular, a wafer is firmly supported by a plurality of parallel plate-shaped electrodes and inserted into a furnace core tube, and high-frequency plasma is generated between the plate-shaped electrodes. Regarding the improvement of the connection structure between a plate electrode and a high-frequency electrode in a plasma CVD apparatus that performs chemical vapor deposition using chemical vapor deposition, it is possible to obtain a stable electrical connection and grow a film of a predetermined thickness with good reproducibility. The purpose is to provide a connection structure between plate-shaped electrodes and high-frequency electrodes, and a wafer is firmly supported by a plurality of parallel plate-shaped electrodes that are connected to different potentials alternately, and the wafer is inserted into a furnace core tube. In a plasma CVD apparatus that performs chemical vapor deposition by generating high-frequency plasma between shaped electrodes, the electrical connection between the plate-shaped electrode and a high-frequency power terminal introduced from the outside into the furnace core tube The power supply connection terminal surface derived from the shaped electrode is placed on the cough high frequency power supply terminal, and the power supply connection terminal surface of the plate-shaped electrode or the surface of the high frequency power supply terminal opposite to the power supply connection terminal surface is provided on at least one side. A contact having a spherical shape and movable in three dimensions, provided on the bottom surface of the recess, slides into a cavity that is shielded from the outside world and is formed in the mounting portion by the recess. It has a structure that is made through an electrical contact mechanism consisting of a structure or the like that is pressed into contact with the concave surface portion.
本発明はプラズマＣＶＤ装置、特に並立した複数枚の板
状電極にウェーハを固持せしめて炉芯管内に挿入し、該
板状電極相互間に高周波プラズマを発生させて化学気相
成長を行うプラズマＣＶＤ装置における板状電極と高周
波電極との接続構造の改良に関する。The present invention relates to a plasma CVD apparatus, particularly a plasma CVD apparatus in which a wafer is firmly supported by a plurality of parallel plate-shaped electrodes and inserted into a furnace core tube, and high-frequency plasma is generated between the plate-shaped electrodes to perform chemical vapor deposition. This invention relates to an improvement in the connection structure between a plate electrode and a high frequency electrode in a device.
比較的低温で絶縁膜を形成することが可能なブラーズマ
ＣＶＤ装置は、半導体装置の一製造プロセスに効果的に
用いられるが、半導体メ、モリの製造においては、極め
て薄い膜厚を有する誘電体膜の形成に用いられるので、
膜厚、膜質の分布の小さい再現性の良い成膜が望まれる
。Brasma CVD equipment, which can form insulating films at relatively low temperatures, is effectively used in one manufacturing process of semiconductor devices, but in the manufacturing of semiconductor memories, dielectric films with extremely thin film thickness are used. Because it is used to form
It is desired to form a film with good reproducibility and a small distribution of film thickness and film quality.
第２図は交互に異なる電位に接続される並立した複数枚
の板状電極にウェーハを固持せしめて炉芯管内に挿入し
、該板状電極間に高周波プラズマを発生させて化学気相
成長を行うプラズマＣＶＤ装置（板状電極を用いるプラ
ズマＣＶＤ装置）を模式的に示す垂直方向断面図（ａ）
及び水平方向断面図（ロ）である。In Figure 2, a wafer is fixed to a plurality of side-by-side plate-shaped electrodes connected to different potentials alternately and inserted into a furnace core tube, and high-frequency plasma is generated between the plate-shaped electrodes to perform chemical vapor deposition. Vertical cross-sectional view (a) schematically showing a plasma CVD apparatus (plasma CVD apparatus using plate-shaped electrodes)
and a horizontal sectional view (b).
図において、１は石英等からなる炉芯管、２Ａ、２Ｂは
蓋が気密に固着されるフランジ部、３はＯｉＪング等の
真空パツキン、４はガス導入口５を具備する第１の蓋、
６は排気ロアを具備し、気密絶縁手段８を介して高周波
電源端子９Ａ、９Ｂが挿入された第２の蓋、１０は抵抗
加熱炉、ＩＩＡ〜ＩＩＦはアルミニウム等からなり垂直
に並立する板状電極、１２は絶縁体からなり並立する板
状電極１１Ａ〜ＩＩＦを所定の間隔で保持する絶縁支持
体、１３はシリコンウェーハ、１４はウェーハ支持爪、
１５＾は一枚おきの板状電極１１ＡとＩＩＣとＩＩＢを
接続する第１の配線、１５Ｂは板状電極１１Ｂと１１０
とＩＩＦを接続する第２の配線、１６Ａ 、１６Ｂは外
側の板状電極１１Ａ及びＩＩＦから導出される電源接続
端子、１７は板状電極１１Ａ〜ＩＩＦの集合体を炉芯管
内へ円滑に挿入するためのコロを示す。In the figure, 1 is a furnace core tube made of quartz or the like, 2A and 2B are flange parts to which the lid is airtightly fixed, 3 is a vacuum packing such as an OiJ ring, 4 is a first lid equipped with a gas inlet 5,
6 is a second lid equipped with an exhaust lower and into which high-frequency power terminals 9A and 9B are inserted through an airtight insulating means 8; 10 is a resistance heating furnace; IIA to IIF are vertical plate-like plates made of aluminum or the like; An electrode, 12 is an insulating support that is made of an insulator and holds the parallel plate electrodes 11A to IIF at a predetermined interval, 13 is a silicon wafer, 14 is a wafer support claw,
15^ is the first wiring connecting every other plate-shaped electrode 11A, IIC and IIB, and 15B is the plate-shaped electrode 11B and 110.
and IIF, 16A and 16B are power supply connection terminals derived from the outer plate electrode 11A and IIF, and 17 is a power supply connection terminal for smoothly inserting the assembly of plate electrodes 11A to IIF into the furnace core tube. Shows the roller for.
この種のプラズマＣＶＤ装置を用いて、板状電極１１八
〜ＩＩＰ面に保持されたシリコンウエーノ＼１３上に例
えば窒化シリコン（ＳｔＪａ）膜を成長させる際には、
ガス導入口５から反応ガスとして例えばモノシラン（Ｓ
ｉＨ４）とアンモニア（ＮＨ３）の混合ガスを導入し、
排気ロアから所定の真空排気を行って炉芯管内の反応ガ
ス圧を０． ＩＴｏｒｒ程度に保持した状態で、抵抗加
熱炉１０によりシリコンウェーハＸ１３を４５０°Ｃ程
度に加熱し、高周波電源端子９八、９Ｂを介して隣合っ
た板状電極間に例えば４５０ＫＨｚの高周波電力を所定
のパワーで印加し、各板状電極の間隔部に高周波プラズ
マを発生させ、このプラズマによる反応ガスの解離及び
化学反応により成長が行われる。When using this type of plasma CVD apparatus to grow a silicon nitride (StJa) film on the silicon wafer \13 held on the plate electrode 118 to IIP surface, for example,
For example, monosilane (S
Introducing a mixed gas of iH4) and ammonia (NH3),
A predetermined vacuum is evacuated from the exhaust lower to reduce the reaction gas pressure in the furnace core tube to 0. The silicon wafer X13 is heated to about 450°C in the resistance heating furnace 10 while being maintained at about ITorr, and a predetermined high-frequency power of, for example, 450 KHz is applied between the adjacent plate electrodes via the high-frequency power terminals 98 and 9B. The high-frequency plasma is generated in the space between the plate-like electrodes, and the plasma causes the dissociation of the reaction gas and the chemical reaction to cause growth.
かかる板状電極を用いるプラズマＣＶＤ装置において、
板状電極１１Ａ 、ＩＩＣ、ＩＩＥとＩＩＢ 、１１０
．１１Ｆ間に高周波電力を印加するために板状電極１１
ＡとＩＩＦに設けられる高周波電源端子９＾及び９Ｂと
の電気的接続機構は、従来、第３図の模式側断面図及び
第２図に示されるように、板状電極１１Ａ（ＩＩＦ）か
ら導出される電源接続端子１６Ａ（１６Ｂ ）を、下方
に向かう嘴状の突起１８が先端部に配設された構造とし
、この嘴状突起１８を高周波電極端子９Ａ（９Ｂ）上に
載せ、その先端を板状電極（ＩＩＡ−１１Ｆ）集合体の
自重によって高周波電源端子９Ａ （９Ｂ）上に圧接す
る構造であった。In a plasma CVD apparatus using such a plate-shaped electrode,
Plate electrode 11A, IIC, IIE and IIB, 110
．． A plate-shaped electrode 11 is used to apply high frequency power between 11F.
Conventionally, the electrical connection mechanism between the high frequency power terminals 9^ and 9B provided at A and IIF is derived from the plate electrode 11A (IIF), as shown in the schematic side sectional view of FIG. 3 and FIG. 2. The power supply connecting terminal 16A (16B) has a structure in which a beak-like protrusion 18 facing downward is disposed at the tip.The beak-like protrusion 18 is placed on the high-frequency electrode terminal 9A (9B), and the tip is placed on the high-frequency electrode terminal 9A (9B). It had a structure in which the plate electrode (IIA-11F) assembly was pressed against the high frequency power terminal 9A (9B) by its own weight.
しかし上記のような従来の接続構造においては、第２図
に示されるように、板状電極１１Ａ（ＩＩＦ）から導出
された電源接続端子１６Ａ （１６Ｂ）と高周波電源端
子９Ａ （９Ｂ）との接続部が炉芯管１内に直に露出し
ているために、炉芯管１の内壁に堆積した成長膜の剥離
した破片等の異物が、電源接続端子１６＾、１６Ｂ等の
嘴状突起１８と高周波電源端子９Ａ、９Ｂとの間に挟ま
って電流の流れを阻害し、そのために板状電極１１Ａ
５ＩＩＣ、ＩＩＥとＩＩＢ 、 １１０ 、 ＩＩＥ間
に生ずるプラズマ放電の電流量が不安定になって、所定
の膜厚を有するＳｉ：＋Ｌ等の絶縁膜の再現性を有する
成膜が困難であるという問題があった。However, in the conventional connection structure as described above, as shown in FIG. Since the parts of the furnace core tube 1 are directly exposed inside the furnace core tube 1, foreign matter such as peeled-off fragments of the grown film deposited on the inner wall of the furnace core tube 1 may be exposed to the beak-like protrusions 18 of the power supply connection terminals 16^, 16B, etc. and the high frequency power supply terminals 9A, 9B and obstruct the flow of current.
The problem is that the current amount of plasma discharge generated between 5IIC, IIE and IIB, 110, IIE becomes unstable, making it difficult to form an insulating film such as Si:+L with a predetermined thickness with reproducibility. was there.
そこで本発明は、安定な電気的接続が得られて所定膜厚
の被膜を再現性良く成長することが可能な板状電極と高
周波電源との接続構造を提供することを目的とする。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a connection structure between a plate-shaped electrode and a high-frequency power source, which allows a stable electrical connection to be obtained and a film having a predetermined thickness to be grown with good reproducibility.
上記課題は、交互に異なる電位に接続される並立した複
数枚の板状電極にウェーハを固持せしめて炉芯管内に挿
入し、該板状電極間に高周波プラズマを発生させて化学
気相成長を行−うプラズマＣＶｉ）装置において、該板
状電極と咳、炉芯管内に外部から導入された高周波電源
端子との電気的接続が、該板状電極から導出された電源
接続端子面を該高周波電源端子上に載置し、該板状電極
の電源接続端子面若しくは高周波電源端子の該電源接続
端子面に対向する面の少なくとも一方に設けた凹部によ
って該載置部に形成される外界から遮蔽された空洞内に
おいて、例えば球面状を有し３次元方向に移動可能な接
触子を、前記凹部の底面に設けた該接触子が滑合する凹
状面に圧接する構造等からなる電気的接触機構を介して
なされる本発明によるプラズマＣＶＤ装置によって解決
される。The above-mentioned problem is achieved by inserting a wafer into a furnace core tube by firmly holding the wafer between a plurality of side-by-side plate-shaped electrodes that are alternately connected to different potentials, and by generating high-frequency plasma between the plate-shaped electrodes to perform chemical vapor deposition. In a plasma CVi) apparatus, the electrical connection between the plate-shaped electrode and a high-frequency power supply terminal introduced from the outside into the furnace core tube connects the power supply connection terminal surface led out from the plate-shaped electrode to the high-frequency power supply terminal. Placed on the power supply terminal, shielded from the outside world formed on the mounting portion by a recess provided in at least one of the power supply connection terminal surface of the plate-shaped electrode or the surface facing the power supply connection terminal surface of the high frequency power supply terminal. An electrical contact mechanism comprising a structure in which a contact having a spherical shape and movable in three dimensions is pressed into contact with a concave surface provided on the bottom surface of the concave portion and into which the contact is slidably fitted in a hollow cavity. This problem is solved by the plasma CVD apparatus according to the present invention.
本発明に係る接続構造においては、板状電極の電源接続
端子と高周波電源端子との接触部に、電源接続端子と高
周波電源端子の接触面の少なくとも一方に形成した凹部
を用い電源接続端子と高周波電極端子によって炉芯管内
雰囲気から遮蔽された空洞部を形成し、この空洞部内で
、例えば球面状の自在電極とこれに滑合する凹面状の被
接触面との面接触で構成される電気的接触手段を介して
板状電極と高周波電源との電気的接続がなされる。In the connection structure according to the present invention, a recess formed in at least one of the contact surfaces of the power supply connection terminal and the high frequency power supply terminal is used for the contact portion between the power supply connection terminal and the high frequency power supply terminal of the plate-shaped electrode. A cavity is formed that is shielded from the atmosphere inside the furnace core tube by the electrode terminal, and within this cavity, an electrical connection is made by surface contact between, for example, a spherical flexible electrode and a concave contact surface that slides on the spherical flexible electrode. Electrical connection is made between the plate electrode and the high frequency power source via the contact means.
かかる構成によれば、当該プラズマＣＶＤ装置における
板状電極から導出される電源接続端子と高周波電極端子
との電気的接触部が、その周囲を取り、囲む電源接続端
子及び高周波電源端子によって遮蔽されて直に炉芯管内
雰囲気中に露出することがなくなるので、上記電気的接
触部に炉芯管の内壁等から剥離した成長膜が挟まり込む
のが防止されて安定した電気的接触が得られ、これによ
りプラズマ電流が安定して再現性の良い成膜が可能にな
る。According to this configuration, the electrical contact portion between the power supply connection terminal and the high frequency electrode terminal derived from the plate-shaped electrode in the plasma CVD apparatus is shielded by the surrounding power supply connection terminal and the high frequency power supply terminal. Since there is no direct exposure to the atmosphere inside the furnace core tube, the grown film that has peeled off from the inner wall of the furnace core tube is prevented from being caught in the electrical contact part, and stable electrical contact can be obtained. This stabilizes the plasma current and enables film formation with good reproducibility.
以下本発明を、図示実施例により具体的に説明する。 The present invention will be specifically explained below with reference to illustrated embodiments.
第１図は前述したような板状電極を用いるプラズマＣＶ
Ｄ装Ｗ（第２図参照）に用いた本発明に係る板状電極と
高周波電源との接続構造（高周波電源接続構造）の一実
施例を示す模式図で、（ａ）は平面図、（ｂ）は部分断
面図である。Figure 1 shows a plasma CV using a plate-shaped electrode as described above.
FIG. 2 is a schematic diagram showing an example of a connection structure between a plate-like electrode and a high-frequency power source (high-frequency power source connection structure) according to the present invention used in a D-mount W (see FIG. 2); (a) is a plan view; (a) is a plan view; b) is a partial sectional view.
図において、
１０９Δはアルミニウム等の金属がらなり、図示されな
い炉芯管の外部へ導出される高周波電源端子（第２図の
従来構造９八に対応）、
１１八は板状電極、
１１６Ａはアルミニウム等の金属からなる電源接続端子
（第２図の従来構造１６Ａに対応）、１９は電源接続端
子１１６Ａを板状電極１１Ａに固定する固定ねじ、
２０はアルミニウム等の金属からなり球状先端部２０Ａ
と支軸２０Ｂとからなる接触子、２１はアルミニウム等
の金属或いは絶縁物からなり接触子の支軸２０Ｂが上下
に滑動可能に貫入された半球状カラー
２２は高周波電源端子１０９Ａの先端部に設けられ前記
カラー２１の球面が面接触する滑動面２２Ａと前記接触
子の支柱２０Ｂが十分に余裕をもって挿入される貫通孔
２２Ｂとからなる半球状カラーに対するソケット部、
２３は半球状カラー２０を前記ソケット部２２上に滑動
可能に保持するカラー押さえばね、
２４は接触子の球状先端部２〇八を前記カラー２１の上
面から上に押し上げるコイルばね、
２５は接触子２０を高周波電源端子１０９Ａに電気的に
接続する高周波フィーダ、
２６は電気的接触部を外界から遮蔽するために接続端子
に設けられる第１の凹部、
２７は第１の凹部の底面に設けられ接触子の球状先端部
２ＯＡの滑動面からなる第２の凹部、２８は前記カラー
押さえばねの逃げ溝
を示す。In the figure, 109Δ is a high-frequency power terminal made of metal such as aluminum and led out to the outside of the furnace core tube (corresponding to the conventional structure 98 in FIG. 2), 118 is a plate-shaped electrode, and 116A is aluminum, etc. 19 is a fixing screw for fixing the power supply connection terminal 116A to the plate electrode 11A, and 20 is a spherical tip 20A made of metal such as aluminum.
and a support shaft 20B; 21 is made of metal such as aluminum or an insulating material; and a hemispherical collar 22 into which the support shaft 20B of the contact penetrates so as to be able to slide up and down is provided at the tip of the high frequency power terminal 109A. 23 is a socket portion for a hemispherical collar comprising a sliding surface 22A with which the spherical surface of the collar 21 makes surface contact, and a through hole 22B into which the support column 20B of the contact is inserted with sufficient margin; 24 is a coil spring that pushes up the spherical tip 208 of the contact upwardly from the upper surface of the collar 21; 25 is a coil spring for electrically connecting the contact 20 to the high frequency power terminal 109A; 26 is a first recess provided in the connection terminal to shield the electrical contact portion from the outside world; 27 is a sliding surface of the spherical tip 2OA of the contact provided on the bottom surface of the first recess; A second recessed portion 28 indicates a clearance groove for the collar presser spring.
この図に示されるように本発明に係る板状電極と高周波
電源との接続構造においては、例えば高周波電源端子１
０９Ａ上に載置される板状電極１１Ａの電源接続端子１
１６Ａの下面即ち高周波電極端子１０９Ａとの接触面に
第１の凹部２６が形成され、高周波電源端子１０９４上
に上記電源接続端子１１６Ａを載置した際に前記凹部２
６が周囲の電源接続端子１１６Ａ及び下部の高周波電源
端子１０９Ａによって回−われて形成される炉芯管１（
第２図参照）内雰匝気から遮蔽された空洞部２９内にお
いて、電気的接触手段を介して高周波電源端子１０９Ａ
と板状電極１１Ａの電源接続端子１１６Ａとの電気的接
続がとられる。As shown in this figure, in the connection structure between the plate electrode and the high frequency power source according to the present invention, for example, the high frequency power terminal 1
Power supply connection terminal 1 of plate electrode 11A placed on 09A
A first recess 26 is formed on the lower surface of 16A, that is, the contact surface with the high frequency electrode terminal 109A, and when the power supply connection terminal 116A is placed on the high frequency power supply terminal 1094, the recess 2
Furnace core tube 1 (
(See Figure 2) In the cavity 29 shielded from the internal atmosphere, the high frequency power terminal 109A is connected via electrical contact means.
An electrical connection is established between the plate electrode 11A and the power supply connection terminal 116A.
電気的接触手段としては、接触抵抗を減少させて通電の
安定化を図るために、球面状先端部２０Ａを有する接触
子２０と上記球面に滑合する第２の凹部２７とによる面
接触構造が用いられ、且つこの第３の凹部は落下異物の
被着を避けるために前記電源接続端子１１６への第１の
凹部２６の底部に下方に向かって開口して形成される。The electrical contact means has a surface contact structure consisting of a contact 20 having a spherical tip 20A and a second recess 27 that slides into the spherical surface in order to reduce contact resistance and stabilize current flow. The third recess is formed to open downwardly at the bottom of the first recess 26 connected to the power supply connection terminal 116 in order to avoid adhesion of fallen foreign matter.
そして接触子２０は、多少の位置合わせ誤差に対しても
その球状先端部２０Ａと前記第２の凹部２７面との面接
触性を失わないために、接触子２０の支軸２０Ｂが上下
に滑動可能に貫通された半球状カラー２１と、高周波電
源端子１０９Ａに前記カラー２１の支持用に設けられカ
ラー２１の半球面に対する滑動面を有する前記ソケット
部２２とによって、球状先端部２ＯＡが水平な二次元方
向への移動が可能で、更にカラー２１と球状先端部２０
Ａとの間に挿入したコイルばね２４によって上方向に押
し上げられて、接触子２０の球状先端部２０Ａとこれの
滑合面を有する前記電源接続端子１１６＾の第２の凹部
２７面との面接触を良好に保つように構成されている・
また、上記接触子２０と高周波電源端子１０９Ａとの電
気的接続は、高周波フィーダ２５により直接接続するこ
とにより、低インピーダンスで安定になされる。The support shaft 20B of the contact 20 slides up and down in order to maintain surface contact between the spherical tip 20A and the surface of the second recess 27 even if there is a slight alignment error. The spherical tip portion 2OA is held in a horizontal position by the hemispherical collar 21 that can be penetrated through the hemispherical collar 21 and the socket portion 22 that is provided on the high frequency power terminal 109A for supporting the collar 21 and has a sliding surface for the hemispherical surface of the collar 21. It is possible to move in the dimensional direction, and the collar 21 and the spherical tip 20
A is pushed upward by the coil spring 24 inserted between the spherical tip 20A of the contact 20 and the surface of the second recess 27 of the power supply connection terminal 116^ having a sliding surface thereof. The electrical connection between the contactor 20 and the high frequency power supply terminal 109A is made stable with low impedance by directly connecting it with the high frequency feeder 25.
なお図示しないが、上記構成の電源接続構造が、並立し
て設けられる板状電極の反対側のはじの電極（第２図１
１Ｆに対応）と異なる電位の高周波電源端子（第２図９
Ｂに対応）の接続部にも設けられることは勿論である。Although not shown in the drawings, the power supply connection structure having the above configuration is connected to the edge electrode on the opposite side of the plate electrodes provided in parallel (see FIG.
1F) and a high-frequency power terminal with a different potential (Fig. 2, 9).
Of course, it can also be provided at the connection section (corresponding to B).
上記実施例に示すように、本発明に係る板状電極を用い
るプラズマＣＶＤ装置における板状電極と高周波電源の
接続構造においては、板状電極から導出された電源接続
端子と外部から炉芯管内に導入された高周波電源端子の
接触部に炉芯管内雰囲気から遮蔽された空洞部を形成し
、この炉芯管内雰囲気から遮蔽されて炉芯管の管壁等か
ら剥脱する成長膜片等の異物の侵入が防止された空洞部
内で、例えば上記実施例に示すような面接触を有する電
気的接触手段により電気的接続がなされる。As shown in the above embodiment, in the connection structure between the plate electrode and the high frequency power source in the plasma CVD apparatus using the plate electrode according to the present invention, the power supply connection terminal led out from the plate electrode and the connection terminal from the outside into the furnace core tube are connected. A cavity shielded from the atmosphere inside the furnace core tube is formed at the contact part of the introduced high frequency power supply terminal, and foreign matter such as growth film fragments that are shielded from the atmosphere inside the furnace core tube and exfoliate from the tube wall of the furnace core tube, etc. An electrical connection is made within the cavity, which is prevented from entering, by means of electrical contact means having surface contact, for example as shown in the above embodiments.
従って上記電気的接触部に前記異物が挟まり込む機会が
大幅に減少して良好な電気的接触が安定して得られ、板
状電極と高周波電源間の電気的接続が低抵抗で且つ安定
して得られるので板状電極間に発生するプラズマ放電が
安定し、所定の膜厚を存する気相成長膜を再現性良（形
成することが可能になる。Therefore, the chances of the foreign matter getting caught in the electrical contact portion are greatly reduced, and good electrical contact can be stably obtained, and the electrical connection between the plate electrode and the high frequency power source can be made with low resistance and stable. As a result, the plasma discharge generated between the plate-shaped electrodes is stabilized, and it becomes possible to form a vapor-phase grown film having a predetermined thickness with good reproducibility.
なお上記実施例において、接触子の球状先端部はアルミ
ニウムに限られるものではなく、更に安定に低い接触抵
抗が得られるよう貴金属等によって被覆されていてもよ
い。また接触子の滑合面となる第２の凹部の表面も、接
触子同様貴金属等により形成されてもよい。In the above embodiments, the spherical tip of the contact is not limited to aluminum, and may be coated with a noble metal or the like to further stably obtain low contact resistance. Further, the surface of the second recess, which becomes the sliding surface of the contact, may also be made of noble metal or the like, like the contact.
なおまた、本発明に係る電気的接続部は、上記実施例と
逆に高周波電源端子側に凹部を形成し、板状電極の電源
接続端子側に接触子を設けた構造でもよいが、接触部の
汚染を考慮すると、実施例の構造の方がより好ましい。Furthermore, the electrical connection part according to the present invention may have a structure in which a concave part is formed on the high frequency power terminal side and a contact is provided on the power supply connection terminal side of the plate electrode, contrary to the above embodiment, but the contact part In consideration of contamination, the structure of the example is more preferable.
いずれにしても本発明に係る板状電極と高周波電源との
接続構造においては、その接続が炉芯管内雰囲気から遮
蔽された空洞部内でなされ板状電極の電源接続端子と高
周波電源端子との接続部を炉芯管内に直に露出させない
のが特徴であり、上記電極端子−電源端子間の電気的接
触手段は上記実施例に限られるものではない。In any case, in the connection structure between the plate-shaped electrode and the high-frequency power source according to the present invention, the connection is made in a cavity that is shielded from the atmosphere inside the furnace core tube, and the connection between the power supply connection terminal of the plate-shaped electrode and the high-frequency power supply terminal is made. The electrical contact means between the electrode terminal and the power supply terminal is not limited to the embodiment described above.
第１図は本発明に係る高周波電源接続構造の一実施例の
模式図で、（ａ）は平面図、（ｂ）Ｊよ部分側断面図、
第２図は板状電極を用いるプラズマＣＶＤ装置の模式図
で、（ａ）は垂直方向断面図、［有］）は水平方向断面
図、
第３図は従来の高周波電源接続構造の模式側断面図
である。
〔発明の効果〕
以上説明のように本発明に係る板状電極を用いるプラズ
マＣＶＤ装置においては、安定した高周波電源と板状電
極との電気的接続を確実にとることができるので、再現
性の良い成膜ができるので、薄い誘電体膜を高精度で形
成することが必要な半導体メモリ等の半導体装置の性能
及び歩留り向上に寄与するところが大きい。
図において、
１０９Ａは高周波電源端子、
１１Ａは板状電極、
１１６Ａは電源接続端子、
１９は固定ねし、
２０は接触子、
２０Ａは球状先端部、
２０Ｂは支軸、
２１は半球状カラー
２２は半球状カラーに対するソケット部、２３はカラー
押さえばね、
２４はコイルばね、
２５は高周波フィーダ、
２６は第１の凹部、
２７は第２の凹部、
２８はカラー押さえばね逃げ溝
を水す。FIG. 1 is a schematic diagram of an embodiment of a high-frequency power connection structure according to the present invention, in which (a) is a plan view, (b) is a partial side sectional view at J, and FIG. 2 is a plasma CVD apparatus using plate-shaped electrodes. In this schematic diagram, (a) is a vertical cross-sectional view, (a) is a horizontal cross-sectional view, and FIG. 3 is a schematic side cross-sectional view of a conventional high-frequency power supply connection structure. [Effects of the Invention] As explained above, in the plasma CVD apparatus using the plate-shaped electrode according to the present invention, it is possible to reliably establish electrical connection between a stable high-frequency power source and the plate-shaped electrode, thereby improving reproducibility. Since a good film can be formed, this greatly contributes to improving the performance and yield of semiconductor devices such as semiconductor memories, which require highly accurate formation of thin dielectric films. In the figure, 109A is a high frequency power terminal, 11A is a plate electrode, 116A is a power supply connection terminal, 19 is a fixing screw, 20 is a contact, 20A is a spherical tip, 20B is a support shaft, 21 is a hemispherical collar 22 A socket portion for the hemispherical collar, 23 a collar presser spring, 24 a coil spring, 25 a high frequency feeder, 26 a first recess, 27 a second recess, and 28 a collar presser spring relief groove.
Claims (2)
板状電極にウェーハを固持せしめて炉芯管内に挿入し、
該板状電極間に高周波プラズマを発生させて化学気相成
長を行うプラズマＣＶＤ装置において、 該板状電極と該炉芯管内に外部から導入された高周波電
源端子との電気的接続が、 該板状電極から導出された電源接続端子面を該高周波電
源端子上に載置し、 該板状電極の電源接続端子面若しくは高周波電源端子の
該電源接続端子面に対向する面の少なくとも一方に設け
た凹部によって該載置部に形成される外界から遮蔽され
た空洞内において電気的接触機構を介してなされること
を特徴とするプラズマＣＶＤ装置。(1) The wafer is firmly supported by a plurality of side-by-side plate-shaped electrodes that are alternately connected to different potentials, and the wafer is inserted into the furnace core tube.
In a plasma CVD apparatus that performs chemical vapor deposition by generating high-frequency plasma between the plate-shaped electrodes, an electrical connection between the plate-shaped electrodes and a high-frequency power terminal introduced from the outside into the furnace core tube is provided in the plate-shaped electrodes. A power supply connection terminal surface derived from the shaped electrode is placed on the high frequency power supply terminal, and is provided on at least one of the power supply connection terminal surface of the plate-shaped electrode or the surface of the high frequency power supply terminal facing the power supply connection terminal surface. A plasma CVD apparatus characterized in that the plasma CVD is carried out via an electrical contact mechanism in a cavity shielded from the outside world, which is formed in the mounting part by a recess.
に移動可能な接触子を、前記凹部の底面に設けた該接触
子が滑合する凹状面部に圧接する構造からなることを特
徴とする請求項（１）記載のプラズマＣＶＤ装置。(2) The electrical contact mechanism has a structure in which a contact having a spherical shape and movable in three dimensions is pressed into contact with a concave surface portion provided on the bottom surface of the concave portion and into which the contact slides. A plasma CVD apparatus according to claim (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27394889A JPH03138372A (en) | 1989-10-20 | 1989-10-20 | Plasma cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27394889A JPH03138372A (en) | 1989-10-20 | 1989-10-20 | Plasma cvd device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03138372A true JPH03138372A (en) | 1991-06-12 |
Family
ID=17534802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27394889A Pending JPH03138372A (en) | 1989-10-20 | 1989-10-20 | Plasma cvd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03138372A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007251014A (en) * | 2006-03-17 | 2007-09-27 | Hitachi Kokusai Electric Inc | Substrate-treating device |
| JP2012517076A (en) * | 2009-02-04 | 2012-07-26 | アプライド マテリアルズ インコーポレイテッド | Ground return for plasma processes |
-
1989
- 1989-10-20 JP JP27394889A patent/JPH03138372A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007251014A (en) * | 2006-03-17 | 2007-09-27 | Hitachi Kokusai Electric Inc | Substrate-treating device |
| JP2012517076A (en) * | 2009-02-04 | 2012-07-26 | アプライド マテリアルズ インコーポレイテッド | Ground return for plasma processes |
| US9382621B2 (en) | 2009-02-04 | 2016-07-05 | Applied Materials, Inc. | Ground return for plasma processes |
| JP2016136522A (en) * | 2009-02-04 | 2016-07-28 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | High frequency return device for plasma process chamber, and plasma processing system |
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