JPH03138359A - Thin film forming device - Google Patents
Thin film forming deviceInfo
- Publication number
- JPH03138359A JPH03138359A JP27556789A JP27556789A JPH03138359A JP H03138359 A JPH03138359 A JP H03138359A JP 27556789 A JP27556789 A JP 27556789A JP 27556789 A JP27556789 A JP 27556789A JP H03138359 A JPH03138359 A JP H03138359A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- grids
- substrate
- counter electrode
- evaporation source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 37
- 238000001704 evaporation Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 230000008020 evaporation Effects 0.000 claims description 25
- 239000007789 gas Substances 0.000 abstract description 12
- 230000001070 adhesive effect Effects 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 description 15
- 230000005684 electric field Effects 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 5
- 239000000470 constituent Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000011364 vaporized material Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は薄膜形成装置に関する。この発明はプラスチッ
クレンズやＬＳＩの製造に利用できる。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film forming apparatus. This invention can be used to manufacture plastic lenses and LSIs.
［従来の技術］
蒸発させた材料物質をイオン化して腹膜を行うようにす
ると、材料物質がイオンという帯電状態にあるので基板
に向かって加速し易く、このため緻密で強い膜を形成で
きる。また材料物質がイオン化しているため反応が容易
に行われるから、反応性や結晶化を必要とする製膜を熱
エネルギーを与えることなく実現でき、従って低温での
製膜が可能であり、プラスチック基板のような耐熱性の
ない基板にも・緻密・均質で密着性のよい薄膜を形成で
きる。[Prior Art] When the vaporized material is ionized to form a peritoneal membrane, the material is in a charged state of ions, so it is easily accelerated toward the substrate, and therefore a dense and strong film can be formed. In addition, since the material is ionized, reactions can easily take place, making it possible to form films that require reactivity or crystallization without applying thermal energy. It is possible to form dense, homogeneous, and highly adhesive thin films even on substrates that do not have heat resistance, such as substrates.
このように「材料物質を蒸発させた後、イオン化して製
膜を行う」ようにした薄膜形成装置としては、蒸発した
材料物質のイオン化をフィラメントにより発生させた熱
電子により行うようにしたものが知られている。As a thin film forming apparatus that ``forms a film by ionizing the material after evaporating it,'' there is one that uses thermoelectrons generated by a filament to ionize the evaporated material. Are known.
［発明が解決しようとする課題］
本発明の目的は「材料物質を蒸発させた後、イオン化し
て製膜を行う」方式の、新規な薄膜形成装置を提供する
ことにある。[Problems to be Solved by the Invention] An object of the present invention is to provide a novel thin film forming apparatus that uses a method of "forming a film by ionizing the material after evaporating it."
［課題を解決するための手段］ 以下、本発明を説明する。[Means to solve the problem] The present invention will be explained below.
本発明の薄膜形成装置は「真空槽と、蒸発源と、対電極
と、第１および第２のグリッドと、漏洩変圧器と」を有
する。The thin film forming apparatus of the present invention includes "a vacuum chamber, an evaporation source, a counter electrode, first and second grids, and a leakage transformer."
「真空槽」は、薄膜形成を行うための空間を形成するが
、この真空槽には［活性ガスあるいは不活性ガスまたは
これら両者の混合ガス」を導入ガスとして導入すること
ができる。A "vacuum chamber" forms a space for forming a thin film, and an "active gas, an inert gas, or a mixture of the two gases" can be introduced into this vacuum chamber as an introduction gas.
「蒸発源」は、真空槽内に於いて薄膜の材料物質を蒸発
させる。The "evaporation source" evaporates the thin film material in a vacuum chamber.
「対電極」は、真空槽内に於いて［薄膜を形成されるべ
き基板」を蒸発源と対向させて保持するが、蒸発源と同
電位もしくは蒸発源に対して負電位にされる。The "counter electrode" holds the "substrate on which a thin film is to be formed" facing the evaporation source in the vacuum chamber, and is set at the same potential as the evaporation source or at a negative potential with respect to the evaporation source.
「第１のグリッド」は、材料物質を通過させ得るように
形成され、蒸発源と対電極との間に配備される。The "first grid" is formed to allow the material to pass therethrough and is disposed between the evaporation source and the counter electrode.
「第２のグリッド」は、材料物質を通過させ得るように
形成され、第１のグリッドと蒸発源との間に配備される
。The "second grid" is formed to allow the material to pass therethrough and is arranged between the first grid and the evaporation source.
「漏洩変圧器」は、第１および第２のグリッド間に高岡
ｊ堤でない駆動周波数の交流電圧を印加して、これらグ
リッド間に安定したグロー放電を発生させる。The "leakage transformer" applies an alternating current voltage with a drive frequency that is not equal to Takaoka's voltage between the first and second grids to generate a stable glow discharge between these grids.
第１および第２のグリッドの一方もしくは双方の構成母
材は、薄膜形成材料もしくはその一部で構成することが
できる。The constituent base material of one or both of the first and second grids may be composed of a thin film forming material or a portion thereof.
［作 用］
真空槽内に導入された活性ガスもしくは不活性ガスある
いはこれらの混合ガス、蒸発源から蒸発した材料物質は
、第１および第２のグリッド間に於いてグリッド間の放
電によりイオン化される。[Function] Active gas, inert gas, or a mixture thereof introduced into the vacuum chamber, and materials evaporated from the evaporation source are ionized by electric discharge between the grids between the first and second grids. Ru.
第１および第２のグリッド間への交流電圧印加は「漏洩
変圧器」により行われるため、過渡的なアーク放電が起
きず、安定したグロー放電が発生する。Since the alternating current voltage is applied between the first and second grids using a "leakage transformer," transient arc discharge does not occur and stable glow discharge occurs.
第１、第２のグリッド間に形成される電界は、印加され
る電圧の変化に応じ向きが逆転する。この電界が第２の
グリッドから第１のグリッドに向くときは、両グリッド
間に発生した正イオンが基板側へ加速される。また上記
電界が第１のグリッドから第２のグリッドに向かうとき
は、負イオンが基板側へ加速される。The direction of the electric field formed between the first and second grids is reversed in response to changes in the applied voltage. When this electric field is directed from the second grid to the first grid, positive ions generated between both grids are accelerated toward the substrate. Further, when the electric field is directed from the first grid to the second grid, negative ions are accelerated toward the substrate.
加速されたイオンは第１のグリッドを通過して基板へ向
かって飛行し、高速で基板に衝突する。The accelerated ions fly toward the substrate through the first grid and collide with the substrate at high speed.
このようにして基板に緻密で密着性の良い薄膜が形成さ
れる。In this way, a dense and highly adhesive thin film is formed on the substrate.
なお、第１および第２のグリッドに漏洩変圧器により印
加される交流電圧のＪＣ流τスが高すぎると、電界の向
きの変化が速すぎてイオンが一方向に十分に加速されな
い、従って本発明では、イオンを基板側に十分に加速で
きるような「高周波でない駆動周波数」の漏洩変圧器を
用いる。駆動周波数は商用周波数程度で良い。Note that if the JC current τ of the AC voltage applied to the first and second grids by the leaky transformer is too high, the direction of the electric field will change too quickly and the ions will not be sufficiently accelerated in one direction. The invention uses a leaky transformer with a "non-high drive frequency" that can sufficiently accelerate ions toward the substrate. The driving frequency may be around the commercial frequency.
第１および第２のグリッドには、薄膜形成の際に加速さ
れたイオンが衝突するので、グリッドの構成材料がスパ
ッタされ、スパッタされたグリッド材料は形成される薄
膜中に不純物として混入する。そこで第１および第２の
グリッドの少なくとも一方の母材を薄膜形成材料もしく
はその一部で構成すると、上記不純物の混入を有効に軽
減もしくは防止できる。Accelerated ions collide with the first and second grids during thin film formation, so the constituent material of the grids is sputtered, and the sputtered grid material mixes into the formed thin film as impurities. Therefore, if the base material of at least one of the first and second grids is made of a thin film forming material or a part thereof, the above-mentioned contamination of impurities can be effectively reduced or prevented.
口実施例コ
以下、図面を参照しつつ具体的な実施例に即して説明す
る。Embodiments Hereinafter, specific embodiments will be described with reference to the drawings.
実施例を示す図に於いて、ペルジャー２はバッキング４
を介してベースプレート１と一体化され真空槽を構成し
ている。In the figure showing the embodiment, Pelger 2 is attached to backing 4.
It is integrated with the base plate 1 via a vacuum chamber.
ベースプレート１は、支持体を兼ねた電極１０゜１１、
１３．１４により貫通されているが、これら電極の貫通
部は勿論気密状態であり、またこれら電極とベースプレ
ート１との間は電気的に絶縁されている。ベースプレー
トｌの中央部に穿設された孔１ａは図示されない真空系
へ連結されている。The base plate 1 includes electrodes 10 and 11 that also serve as supports;
13 and 14, the penetrating portions of these electrodes are of course airtight, and these electrodes and the base plate 1 are electrically insulated. A hole 1a bored in the center of the base plate 1 is connected to a vacuum system (not shown).
一対の電極１４の間には、タングステンやモリブデン等
の金属をコイル状に形成した抵抗加熱式の蒸発源９が支
持されている。蒸発源としては他にビーム蒸発源等、従
来の真空蒸着方式で知られた種々の方式のものを適宜用
いることができる。A resistance heating type evaporation source 9 made of metal such as tungsten or molybdenum and formed into a coil shape is supported between the pair of electrodes 14 . As the evaporation source, various types of conventional vacuum evaporation methods, such as a beam evaporation source, can be used as appropriate.
電極１０には対電極５が支持され、対電極５の蒸発源９
に対向する側の面には、：ａ膜を形成されるべき基板１
５が適宜の方法で支持されている。A counter electrode 5 is supported on the electrode 10, and an evaporation source 9 of the counter electrode 5 is supported on the electrode 10.
On the surface facing the substrate 1 on which the :a film is to be formed.
5 is supported in an appropriate manner.
電極１１には第１のグリッド６が支持され、電極１３に
は第２のグリッド８が支持されている。これら第１およ
び第２のグリッド６．８は蒸発した材料物質を通過させ
得るように形成されており、この例では網目状である。A first grid 6 is supported on the electrode 11, and a second grid 8 is supported on the electrode 13. These first and second grids 6.8 are designed to allow the vaporized material to pass through them and are in the form of a mesh in this example.
１対の電極１４は蒸発源９の加熱用電源１７に接続され
、電極１１．１３は漏洩変圧器１８の２次側の各出力端
子に接続されている。The pair of electrodes 14 is connected to the heating power source 17 of the evaporation source 9, and the electrodes 11.13 are connected to each output terminal on the secondary side of the leakage transformer 18.
なお、この実施例のように電極１０を介して対電極５を
漏洩変圧器１８の２次側出力端子に図の如く接続し、対
電極５が第２のグリッド８と同電位になるようにすると
、第１のグリッド６を基板５の側に通過した正・負イオ
ンが、グリッド間の電界の向きが反転するときグリッド
６と対電極５の間に形成される電界により基板の側へ加
速される利点がある０図の接地は必ずしも必要ではない
。As in this embodiment, the counter electrode 5 is connected to the secondary output terminal of the leaky transformer 18 via the electrode 10 as shown in the figure, so that the counter electrode 5 has the same potential as the second grid 8. Then, the positive and negative ions that have passed through the first grid 6 toward the substrate 5 are accelerated toward the substrate by the electric field formed between the grid 6 and the counter electrode 5 when the direction of the electric field between the grids is reversed. Grounding of Figure 0 is not always necessary, as it has the advantage of being
また、この実施例では蒸発源９と対電極５は同電位とさ
れる。Further, in this embodiment, the evaporation source 9 and the counter electrode 5 are at the same potential.
実際には、各電極間の接続は種々のスイッチを含み、こ
れらスイッチの操作により薄膜形成のプロセスを実現す
るが、これらスイッチは図示を省略されている。Actually, the connection between each electrode includes various switches, and the thin film forming process is realized by operating these switches, but these switches are omitted from illustration.
以下、この実施例装置による薄膜形成を説明する。Thin film formation using this embodiment apparatus will be described below.
蒸発源９に材料物質を保持させ、基板１５を対電極５に
図の如く支持させたら、真空系により真空槽内を１０４
〜１０− ’Ｔｏｒｒの圧力に、減圧する。After the material is held in the evaporation source 9 and the substrate 15 is supported on the counter electrode 5 as shown in the figure, the inside of the vacuum chamber is
Vacuum to a pressure of ~10-'Torr.
続いて必要に応じて、アルゴン等の不活性ガス、酸素・
水素や窒素等の活性ガス、あるいはこれら活性ガス・不
活性ガスの混合ガスを導入ガスとして１０°〜１０−
’Ｔｏｒｒ程度の圧力に導入する。この導入ガスの導入
は図示されないバルブの調整により行われる。Then, if necessary, inert gas such as argon, oxygen, etc.
10° to 10-
'Introduce the pressure to about Torr. This introduction of the introduced gas is performed by adjusting a valve (not shown).
この状態で蒸発源９により材料物質を蒸発させると、蒸
発した材料物質は広がりをもって基板１５の側へ飛行す
る。When the material is evaporated by the evaporation source 9 in this state, the evaporated material spreads and flies toward the substrate 15.
このとき、漏洩変圧器１８により第１および第２のグリ
ッド６．８間に交流電圧を印加するとグリッド６．８間
に安定したグロー放電が生じ、グリッド間空間に存在す
る材料物質・導入ガスが正または負にイオン化される。At this time, when an AC voltage is applied between the first and second grids 6.8 by the leakage transformer 18, a stable glow discharge occurs between the grids 6.8, and the material substance/introduced gas existing in the space between the grids is Can be positively or negatively ionized.
このイオン化の際、正にイオン化されるか負にイオン化
されるかはイオン化される物質の電子親和性により決定
される。During this ionization, whether the substance is positively ionized or negatively ionized is determined by the electron affinity of the substance to be ionized.
グリッド６．８間にはグリッド間の電位差に応じて電界
が形成されるが、この電界の向きは、第１のグリッド６
から第２のグリッド８の側へ向かう向きと、その逆向き
とに交互に変化する。An electric field is formed between the grids 6 and 8 depending on the potential difference between the grids, but the direction of this electric field is different from that of the first grid 6.
The direction alternately changes from the direction toward the second grid 8 side and the opposite direction.
電界がグリッド８からグリッド６へ向かうときは正イオ
ンがグリッド６側へ加速されてグリッド６を通過する。When the electric field moves from the grid 8 to the grid 6, positive ions are accelerated toward the grid 6 and pass through the grid 6.
また電界の向きが逆になれば負イオンがグリッド６側へ
加速されてグリッド６を通過する。換言すればグリッド
間の電界の向きの変化に応じて、正負のイオンが交互に
グリッド６を基板１５側に通過する。Furthermore, when the direction of the electric field is reversed, negative ions are accelerated toward the grid 6 and pass through the grid 6. In other words, positive and negative ions alternately pass through the grid 6 toward the substrate 15 side according to changes in the direction of the electric field between the grids.
グリッド６を通過したイオンは基板１５に高速で衝突し
て薄膜を形成する。The ions that have passed through the grid 6 collide with the substrate 15 at high speed to form a thin film.
この実施例に於いては、対電極５が第２のグリッド８と
同電位となっているので、グリッド６を通過した正（負
）イオンは、グリッド間の電界の向きが反転して負（正
）イオンがグリッド６側へ加速されるとき、グリッド６
と対電極５の間に形成される電界により基板１５側へ加
速されるので薄膜の基板への密着性はより強くなる。In this embodiment, since the counter electrode 5 is at the same potential as the second grid 8, the positive (negative) ions that have passed through the grid 6 reverse the direction of the electric field between the grids and become negative ( Positive) When ions are accelerated toward grid 6, grid 6
Since the thin film is accelerated toward the substrate 15 by the electric field formed between the electrode 5 and the counter electrode 5, the adhesion of the thin film to the substrate becomes stronger.
形成される薄膜の構造は、蒸発源に保持させる材料物質
と導入ガスとにより定まる。The structure of the formed thin film is determined by the material held in the evaporation source and the introduced gas.
蒸発源に保持させる材料物質としてＡＩを用い、不活性
ガスとしてアルゴン、活性ガスとして酸素を混合した導
入ガスを１０−’Ｔｏｒｒの圧力に導入して成膜を行え
ば、基板上にＡＩＪ３の薄膜を形成できる。またこの場
合、材料物質として上記ＡＩに替えてＳｉもしくはＳｉ
Ｏを選択すれば、 ５ｉｆｔの薄膜を成膜できるし、材
料物質としてＩｎもしくはＺｎを選択すればＩｎ、０３
あるいはＺｎＯの薄膜が得られる。If a thin film of AIJ3 is formed on the substrate by using AI as the material to be held in the evaporation source and introducing a gas mixture of argon as the inert gas and oxygen as the active gas at a pressure of 10-'Torr, a thin film of AIJ3 will be formed on the substrate. can be formed. In this case, Si or Si is used instead of the above-mentioned AI as the material.
If O is selected, a 5ift thin film can be formed, and if In or Zn is selected as the material, In, 03
Alternatively, a thin film of ZnO can be obtained.
また、蒸発源にＣｄを保持させ、導入ガスとしてＨ２Ｓ
を用いればＣｄＳの薄膜が得られる。In addition, Cd is held in the evaporation source, and H2S is used as the introduced gas.
A thin film of CdS can be obtained by using .
さらに、不活性ガスアルゴンとともに活性ガスとしてア
ンモニアを導入し、蒸発源にＴｉもしくは’ｒａを保持
させて成膜を行えばＴｉＮ、ＴａＮの薄膜を得ることが
で きる。Furthermore, a thin film of TiN or TaN can be obtained by introducing ammonia as an active gas together with the inert gas argon and forming a film while holding Ti or 'ra in the evaporation source.
また第１．第２のグリッドの少なくとも一方の構成母材
を薄膜の材料もしくはその一部とすることにより、グリ
ッド構成母材がスパッターにより薄膜へ不純物として混
入するのを有効に軽減もしくは防止でき、薄膜の純度・
組成制御性を高くすることができる。Also number 1. By making at least one constituent base material of the second grid a thin film material or a part thereof, it is possible to effectively reduce or prevent the grid constituent base material from being mixed into the thin film as an impurity due to sputtering, and improve the purity of the thin film.
Composition controllability can be improved.
［発明の効果］
以上１本発明によれば新規な薄膜形成装置を提供できる
。この装置は上述の如き構成となっているため、ガラス
基板等の耐熱性ある基板への薄膜形成は言うまでもなく
、プラスチックのような耐熱性のない基板にも良好に薄
膜を形成できる。[Effects of the Invention] According to the present invention, a novel thin film forming apparatus can be provided. Since this apparatus has the above-described configuration, it is possible to form thin films not only on heat-resistant substrates such as glass substrates, but also on non-heat-resistant substrates such as plastics.
また薄膜を構成する材料はイオンとして基板に向かって
加速され、十分に高いエネルギーをもって基板に衝突す
るので薄膜の密着性、稠密・均質性が良い。Furthermore, the material constituting the thin film is accelerated toward the substrate as ions and collides with the substrate with sufficiently high energy, resulting in good adhesion, density, and homogeneity of the thin film.
図は、本発明の１実施例を示す図である。 The figure shows one embodiment of the invention.
Claims (2)
源と、 上記真空槽内に於いて、薄膜を形成されるべき基板を上
記蒸発源と対向させて保持し、蒸発源と同電位もしくは
蒸発源に対して負電位にされる対電極と、 蒸発した材料物質を通過させ得るように形成され、上記
蒸発源と対電極との間に、対電極側から蒸発源側に向か
って第１、第２の順に配備される第１および第２のグリ
ッドと、 これら第１および第２のグリッド間に安定したグロー放
電を発生させる、高周波でない駆動周波数の漏洩変圧器
と、を有する薄膜形成装置。1. a vacuum chamber; an evaporation source for evaporating a material in the vacuum chamber; a substrate on which a thin film is to be formed is held in the vacuum chamber facing the evaporation source; a counter electrode that is at the same potential as or a negative potential with respect to the evaporation source; and a counter electrode that is formed so as to allow the evaporated material to pass therethrough, and between the evaporation source and the counter electrode, from the counter electrode side to the evaporation source side. first and second grids arranged in the order of the first and second grids, and a leakage transformer with a drive frequency that is not a high frequency and generates a stable glow discharge between the first and second grids. A thin film forming apparatus with
方もしくは双方の構成母材を、薄膜形成材料もしくはそ
の一部で構成したことを特徴とする薄膜形成装置。2. 2. The thin film forming apparatus according to claim 1, wherein the base material of one or both of the first and second grids is made of a thin film forming material or a part thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27556789A JP2905512B2 (en) | 1989-10-23 | 1989-10-23 | Thin film forming equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27556789A JP2905512B2 (en) | 1989-10-23 | 1989-10-23 | Thin film forming equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03138359A true JPH03138359A (en) | 1991-06-12 |
| JP2905512B2 JP2905512B2 (en) | 1999-06-14 |
Family
ID=17557248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27556789A Expired - Fee Related JP2905512B2 (en) | 1989-10-23 | 1989-10-23 | Thin film forming equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2905512B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100108917A (en) * | 2009-03-31 | 2010-10-08 | 서울반도체 주식회사 | Linear led module and led lighting apparatus comprising the same |
-
1989
- 1989-10-23 JP JP27556789A patent/JP2905512B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100108917A (en) * | 2009-03-31 | 2010-10-08 | 서울반도체 주식회사 | Linear led module and led lighting apparatus comprising the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2905512B2 (en) | 1999-06-14 |
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|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |