JPH03124463U - - Google Patents
Info
- Publication number
- JPH03124463U JPH03124463U JP1990032522U JP3252290U JPH03124463U JP H03124463 U JPH03124463 U JP H03124463U JP 1990032522 U JP1990032522 U JP 1990032522U JP 3252290 U JP3252290 U JP 3252290U JP H03124463 U JPH03124463 U JP H03124463U
- Authority
- JP
- Japan
- Prior art keywords
- air cylinder
- gas
- ion beam
- gas gun
- rod
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010884 ion-beam technique Methods 0.000 claims 3
- 239000007921 spray Substances 0.000 claims 1
- 101150071927 AANAT gene Proteins 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
- G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31742—Etching microareas for repairing masks
- H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Physical Vapour Deposition (AREA)
Description
第1図はこの考案にかかるガス銃の縦断面図、
第2図および第3図はこの考案にかかる同軸上二
段式エアシリンダの断面図、第4図はこの考案に
かかるガス銃のバルブ開口部の断面図、第5図は
従来の代表的なガス銃の縦断面図を示すものであ
る。 1……ガス銃本体の外装部、1a……外容器の
フランジ部、2……中容器、3……エンドプレー
ト、4……中間ロツド、5……ノズル、6……バ
ルブロツド、7……Oリング、8……有機化合物
ガスの原料粉、8a……ガス出口、9……リザー
バ、10……ハウジング、11……ヘツドカバー
、11a……ヘツドカバー内側部、12……ロツ
ドカバー、13,14……スナツプリング、15
……ノズル上下動用ピストンロツド、16……バ
ルブ開閉用ピストンロツド、17……ストツパ用
のロツドカバー、18……スナツプリング、19
……シリンダ取付板、20,23……支柱、21
……固定板、22,24……ナツト、25a……
電磁弁、25b……電磁弁、26……エアー源、
A……ガス開口部、イ,ロ,ハ,ニ……エアー導
入口。
第2図および第3図はこの考案にかかる同軸上二
段式エアシリンダの断面図、第4図はこの考案に
かかるガス銃のバルブ開口部の断面図、第5図は
従来の代表的なガス銃の縦断面図を示すものであ
る。 1……ガス銃本体の外装部、1a……外容器の
フランジ部、2……中容器、3……エンドプレー
ト、4……中間ロツド、5……ノズル、6……バ
ルブロツド、7……Oリング、8……有機化合物
ガスの原料粉、8a……ガス出口、9……リザー
バ、10……ハウジング、11……ヘツドカバー
、11a……ヘツドカバー内側部、12……ロツ
ドカバー、13,14……スナツプリング、15
……ノズル上下動用ピストンロツド、16……バ
ルブ開閉用ピストンロツド、17……ストツパ用
のロツドカバー、18……スナツプリング、19
……シリンダ取付板、20,23……支柱、21
……固定板、22,24……ナツト、25a……
電磁弁、25b……電磁弁、26……エアー源、
A……ガス開口部、イ,ロ,ハ,ニ……エアー導
入口。
Claims (1)
- 【実用新案登録請求の範囲】 真空容器内の被加工物にガスを吹き付け、同時
に、イオンビームを照射することにより膜付けを
行うイオンビーム加工装置のガス銃において、 第一のエアシリンダのバルブロツドと、 上記第一のエアシリンダと同軸に構成された、
第二のエアシリンダの中間ロツドと、 上記第一のエアシリンダのバルブロツドと上記
第二のエアシリンダの中間ロツドの摺動部にガス
の出口を有するイオンビーム加工装置用のガス銃
。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1990032522U JPH03124463U (ja) | 1990-03-28 | 1990-03-28 | |
DE4110118A DE4110118C2 (de) | 1990-03-28 | 1991-03-27 | Gaspistole für ein Ionenstrahlbearbeitungsgerät und deren Verwendung |
US07/676,447 US5148024A (en) | 1990-03-28 | 1991-03-28 | Ion beam processing apparatus and gas gun therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1990032522U JPH03124463U (ja) | 1990-03-28 | 1990-03-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH03124463U true JPH03124463U (ja) | 1991-12-17 |
Family
ID=12361293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1990032522U Pending JPH03124463U (ja) | 1990-03-28 | 1990-03-28 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5148024A (ja) |
JP (1) | JPH03124463U (ja) |
DE (1) | DE4110118C2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004508460A (ja) * | 2000-08-26 | 2004-03-18 | ナヴォテック・ゲーエムベーハー | 表面へ管を通して気体または液体を供給する装置、その管のセットおよびその方法 |
JP2013197594A (ja) * | 2012-03-21 | 2013-09-30 | Fei Co | 複数ガス注入システム |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2914095A (en) * | 1994-06-28 | 1996-01-25 | Fei Company | Charged particle deposition of electrically insulating films |
US6276492B1 (en) * | 2000-03-07 | 2001-08-21 | Westinghouse Air Brake Company | Push rod activated grease nozzle |
US20050103272A1 (en) | 2002-02-25 | 2005-05-19 | Leo Elektronenmikroskopie Gmbh | Material processing system and method |
DE10208043B4 (de) * | 2002-02-25 | 2011-01-13 | Carl Zeiss Nts Gmbh | Materialbearbeitungssystem und Materialbearbeitungsverfahren |
DE102007054073A1 (de) | 2007-11-13 | 2009-05-14 | Carl Zeiss Nts Gmbh | System und Verfahren zum Bearbeiten eines Objekts |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4930439A (en) * | 1984-06-26 | 1990-06-05 | Seiko Instruments Inc. | Mask-repairing device |
JPS62195662A (ja) * | 1986-02-24 | 1987-08-28 | Seiko Instr & Electronics Ltd | マスクリペア方法及び装置 |
JPS62281349A (ja) * | 1986-05-29 | 1987-12-07 | Seiko Instr & Electronics Ltd | 金属パタ−ン膜の形成方法及びその装置 |
AT392857B (de) * | 1987-07-13 | 1991-06-25 | Ims Ionen Mikrofab Syst | Vorrichtung und verfahren zur inspektion einer maske |
US4874460A (en) * | 1987-11-16 | 1989-10-17 | Seiko Instruments Inc. | Method and apparatus for modifying patterned film |
US4983830A (en) * | 1989-06-29 | 1991-01-08 | Seiko Instruments Inc. | Focused ion beam apparatus having charged particle energy filter |
-
1990
- 1990-03-28 JP JP1990032522U patent/JPH03124463U/ja active Pending
-
1991
- 1991-03-27 DE DE4110118A patent/DE4110118C2/de not_active Expired - Fee Related
- 1991-03-28 US US07/676,447 patent/US5148024A/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004508460A (ja) * | 2000-08-26 | 2004-03-18 | ナヴォテック・ゲーエムベーハー | 表面へ管を通して気体または液体を供給する装置、その管のセットおよびその方法 |
JP2013197594A (ja) * | 2012-03-21 | 2013-09-30 | Fei Co | 複数ガス注入システム |
Also Published As
Publication number | Publication date |
---|---|
US5148024A (en) | 1992-09-15 |
DE4110118A1 (de) | 1991-10-10 |
DE4110118C2 (de) | 1999-12-09 |