JPH0312321A - Y-ba-cu-o-based oxide superconducting thin film and its production - Google Patents
Y-ba-cu-o-based oxide superconducting thin film and its productionInfo
- Publication number
- JPH0312321A JPH0312321A JP1148805A JP14880589A JPH0312321A JP H0312321 A JPH0312321 A JP H0312321A JP 1148805 A JP1148805 A JP 1148805A JP 14880589 A JP14880589 A JP 14880589A JP H0312321 A JPH0312321 A JP H0312321A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- superconducting thin
- oxide superconducting
- based oxide
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000004544 sputter deposition Methods 0.000 claims abstract description 6
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 claims abstract 4
- 229910002480 Cu-O Inorganic materials 0.000 claims abstract 2
- 239000013078 crystal Substances 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 5
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000004907 flux Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
この発明は、Y−Ba−Cu−0系酸化物超電導薄膜お
よびその製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a Y-Ba-Cu-0 based oxide superconducting thin film and a method for producing the same.
[従来の技術]
従来、Y−Ba−Cu−0系酸化物超電導薄膜を、たと
えばスパッタ法により、MgO基板、5rTio、基板
、YSZ(イツトリア安定化ジルコニア)基板等の上に
成膜する場合、Y:Ba:Cuの比が、1:2:3にな
るように、成膜条件を設定していた。なぜなら、Y−B
a−Cu−0系酸化物超電導材料においては、上述した
ような組成比のときに、最も優れた超電導特性を示すと
認識されていたからである。[Prior Art] Conventionally, when a Y-Ba-Cu-0 based oxide superconducting thin film is formed on an MgO substrate, a 5rTio substrate, a YSZ (yttria stabilized zirconia) substrate, etc. by sputtering, for example, The film forming conditions were set so that the ratio of Y:Ba:Cu was 1:2:3. Because Y-B
This is because it has been recognized that a-Cu-0 based oxide superconducting materials exhibit the best superconducting properties when the composition ratio is as described above.
[発明が解決しようとする課題]
超電導薄膜は、超電導送電、超電導マグネット、超電導
デバイス、等の分野において使用されるが、これらの用
途に向けられる場合、できるだけ高い臨界電流密度を有
していることが望ましい。しかしながら、従来得られて
いるY−Ba−Cu−0系酸化物超電導薄膜は、必ずし
も臨界電流密度(J c)の点において十分であるとは
言えなかった。すなわち、Jcは、単結晶薄膜で10’
A/Cm2程度であり、多結晶薄膜で10’A/am2
程度である。[Problem to be solved by the invention] Superconducting thin films are used in fields such as superconducting power transmission, superconducting magnets, and superconducting devices, and when used for these applications, they must have a critical current density as high as possible. is desirable. However, conventionally obtained Y-Ba-Cu-0 based oxide superconducting thin films cannot necessarily be said to be sufficient in terms of critical current density (Jc). That is, Jc is 10' for a single crystal thin film.
It is about A/Cm2, and 10'A/am2 with polycrystalline thin film.
That's about it.
また、このような超電導薄膜に磁場を印加した場合、J
cの低下が急激に生じる。単結晶薄膜の場合には、8テ
スラにおけるJcと0テスラにおけるJcとの比は、1
0−2であり、多結晶薄膜の場合、8テスラにおけるJ
cと0テスラにおけるJcとの比は、10−4であった
。Furthermore, when a magnetic field is applied to such a superconducting thin film, J
A sudden decrease in c occurs. In the case of a single crystal thin film, the ratio of Jc at 8 Tesla to Jc at 0 Tesla is 1
0-2, and for polycrystalline thin films, J at 8 Tesla
The ratio of c to Jc at 0 Tesla was 10-4.
超電導薄膜を実用化する場合、Jcの向上を図ること、
および磁場の影響によるJcの低下が少ないことが重要
である。When putting superconducting thin films into practical use, it is necessary to improve Jc,
It is also important that the decrease in Jc due to the influence of the magnetic field is small.
それゆえに、この発明の目的は、上述したような要望を
満たし得るY−Ba−Cu−0系酸化物超電導薄膜およ
びその製造方法を提供しようとすることである。Therefore, an object of the present invention is to provide a Y-Ba-Cu-0 based oxide superconducting thin film and a method for manufacturing the same that can satisfy the above-mentioned demands.
[課題を解決するための手段]
この発明にかかるY−Ba−Cu−0系酸化物超電導薄
膜は、上述した技術的課題を解決するため、Agを、0
.2at%〜10at%の濃度で含有することを特徴と
している。[Means for Solving the Problems] In order to solve the above-mentioned technical problems, the Y-Ba-Cu-0 based oxide superconducting thin film according to the present invention contains 0 Ag,
.. It is characterized by containing at a concentration of 2 at% to 10 at%.
また、この発明によれば、上述したようなYBa−Cu
−0系酸化物超電導薄膜の製造方法が提供される。この
製造方法は、スパッタ法によるものであり、Agの濃度
が0.2at%〜10at%のY−Ba−Cu−0系酸
化物超電導薄膜を堆積させ得るような添加量をもってA
gが添加されたターゲットを用いることが特徴である。Further, according to the present invention, the above-mentioned YBa-Cu
A method for manufacturing a -0-based oxide superconducting thin film is provided. This manufacturing method is based on a sputtering method, in which A is added in an amount such that a Y-Ba-Cu-0 based oxide superconducting thin film having an Ag concentration of 0.2 at% to 10 at% can be deposited.
The feature is that a target to which g is added is used.
[発明の作用および効果]
この発明によれば、Y−Ba−Cu−0系酸化物超電導
薄膜にAgを所定量添加することにより、単結晶薄膜お
よび多結晶薄膜のいずれにおいても、Jcが向上し、ま
た、Jcが磁場の影響により低下することが低減される
。[Operations and Effects of the Invention] According to the present invention, by adding a predetermined amount of Ag to the Y-Ba-Cu-0 based oxide superconducting thin film, Jc can be improved in both single crystal thin films and polycrystalline thin films. Furthermore, the decrease in Jc due to the influence of the magnetic field is reduced.
上述のことは、実験により確認されたものであるが、A
gの添加の作用としては、単結晶薄膜の場合、磁束のピ
ン止め点としての効果があり、それによって、Jcが向
上するとともに、磁場の影響によるJcの低下の度合が
低減されたものと考えられる。また、多結晶薄膜の場合
には、Agの添加は、磁束のピン止め点としての効果と
ともに、結晶粒を大きくし、結晶粒界の不純物の析出を
少なくし、それによって、JCが向上し、かつ、磁場の
影響によるJcの低下の度合が低減されたものと考えら
れる。The above has been confirmed through experiments, but A.
In the case of a single crystal thin film, the addition of g acts as a pinning point for magnetic flux, which is thought to improve Jc and reduce the degree of decrease in Jc due to the influence of the magnetic field. It will be done. In addition, in the case of polycrystalline thin films, the addition of Ag not only acts as a pinning point for magnetic flux, but also increases the size of crystal grains and reduces the precipitation of impurities at grain boundaries, thereby improving JC. Moreover, it is considered that the degree of decrease in Jc due to the influence of the magnetic field was reduced.
なお、Agの添加量に関しては、0 、 2 a t%
未満では、上述したような効果がほとんどなく、10a
t%を越えると、逆に、臨界温度が低下するなど、超電
導特性が、添加しない場合よりも劣化するため、0.2
at%〜10at%の範囲に選ばれる。Regarding the amount of Ag added, 0, 2 at%
If it is less than 10a, there will be almost no effect as described above, and if it is less than 10a
On the other hand, if it exceeds 0.2 t%, the superconducting properties will deteriorate compared to the case without addition, such as the critical temperature will decrease.
It is selected in the range of at% to 10 at%.
[実施例]
以下に、この発明に従って実施した実施例および比較例
について説明する。[Examples] Examples and comparative examples carried out according to the present invention will be described below.
実施例
RFマグネトロンスパッタ法により、Y:Ba:Cu:
Agの比が、1:2. 5:6. o:o、 05
のターゲットを用い、基板温度700℃、RF電力10
0W、スパッタガスAr+10%02、ガス圧30mT
o r rの条件で、MgO(100)単結晶基板上お
よびYSZ多結晶基板上にそれぞれ成膜した。成膜後、
酸素雰囲気中において、920℃で3時間、次いで40
0℃で3時間の熱処理を施して、試料を得た。Example By RF magnetron sputtering, Y:Ba:Cu:
The Ag ratio is 1:2. 5:6. o: o, 05
target, substrate temperature 700℃, RF power 10
0W, sputtering gas Ar+10%02, gas pressure 30mT
Films were formed on an MgO (100) single crystal substrate and a YSZ polycrystalline substrate under the conditions of o r r. After film formation,
In an oxygen atmosphere at 920°C for 3 hours, then at 40°C.
A sample was obtained by heat treatment at 0° C. for 3 hours.
これら試料につき、Jcを7fpj定したところ、零磁
場において、MgO(100)単結晶基板上に形成され
た超電導薄膜では、4X106A/cm2であり、YS
Z多結晶基板上に形成された超電導薄膜では、1.2X
10’ A/cm2であった。さらに、Jcの磁場依存
性をglll定したところ、第1図の「1」および「2
」に示すような結果が得られた。なお、第1図において
、「1」は、MgO(100)単結晶基板上に形成され
た超電導薄膜の場合を示し、「2」は、YSZ多結晶基
板上に形成された超電導薄膜の場合を示している。When Jc was determined at 7fpj for these samples, it was found to be 4X106A/cm2 in a superconducting thin film formed on a MgO (100) single crystal substrate in zero magnetic field, and YS
In a superconducting thin film formed on a Z polycrystalline substrate, 1.2X
It was 10' A/cm2. Furthermore, when we determined the magnetic field dependence of Jc, we found "1" and "2" in Figure 1.
The results shown in `` were obtained. In FIG. 1, "1" indicates the case of a superconducting thin film formed on an MgO (100) single crystal substrate, and "2" indicates the case of a superconducting thin film formed on a YSZ polycrystalline substrate. It shows.
なお、得られた超電導薄膜の組成分析をすると、どちら
の膜についても、Y:Ba:Cu:Agの比は、1:2
.1:3.2:0.05となっていた。Furthermore, when analyzing the composition of the obtained superconducting thin films, the ratio of Y:Ba:Cu:Ag was 1:2 for both films.
.. The ratio was 1:3.2:0.05.
比較例
実施例と比較して、Y: Ba : Cuの比が、1:
2.5:6.0のAgを含まないターゲットを用いたこ
とを除いて、実施例と同様の方法により、試料を得た。Comparative Example Compared to the example, the ratio of Y: Ba: Cu was 1:
A sample was obtained in the same manner as in the example except that a 2.5:6.0 Ag-free target was used.
得られた試料について、Jcを測定したところ、零磁場
において、MgO(100)単結晶基板上に形成された
超電導薄膜では、2X106A/cm2であり、YSZ
多結晶基板上に形成された超電導薄膜では、3×104
A/Cm2であった。When Jc was measured for the obtained sample, it was found to be 2X106A/cm2 in a superconducting thin film formed on a MgO (100) single crystal substrate in a zero magnetic field, and that
In a superconducting thin film formed on a polycrystalline substrate, 3×104
It was A/Cm2.
また、Jcの磁場依存性を測定したところ、第1図にお
ける「3」および「4」のような結果が得られた。第1
図において、「3」は、MgO(100)単結晶基板上
の超電導薄膜の場合を示し、「4」は、YSZ多結晶基
板上での超電導薄膜の場合を示している。Furthermore, when the magnetic field dependence of Jc was measured, results such as "3" and "4" in FIG. 1 were obtained. 1st
In the figure, "3" indicates the case of a superconducting thin film on an MgO (100) single crystal substrate, and "4" indicates the case of a superconducting thin film on a YSZ polycrystalline substrate.
なお、これら超電導薄膜の組成分析をすると、どちらの
膜についても、Y:Ba:Cuの比は、1:2.1:3
.2となっていた。Furthermore, when analyzing the composition of these superconducting thin films, the ratio of Y:Ba:Cu is 1:2.1:3 for both films.
.. It was 2.
第1図は、この発明にかかる実施例と比較例における酸
化物超電導薄膜の臨界電流密度の磁場依存性を示す図で
ある。
図において、1.2はこの発明の実施例を示し、3.4
は比較例を示している。
第1
名肱場
〔テズラ」FIG. 1 is a diagram showing the magnetic field dependence of the critical current density of oxide superconducting thin films in Examples and Comparative Examples according to the present invention. In the figures, 1.2 shows an embodiment of the invention, and 3.4
indicates a comparative example. 1st famous place [Tezra]
Claims (2)
することを特徴とする、Y−Ba−Cu−O系酸化物超
電導薄膜。(1) A Y-Ba-Cu-O-based oxide superconducting thin film containing Ag at a concentration of 0.2 at% to 10 at%.
タ法により製造する方法において、請求項1記載のY−
Ba−Cu−O系酸化物超電導薄膜を堆積させ得るよう
な添加量をもってAgが添加されたターゲットを用いる
ことを特徴とする、製造方法。(2) In the method of manufacturing a Y-Ba-Cu-O based oxide superconducting thin film by sputtering method, the Y-
A manufacturing method characterized by using a target to which Ag is added in an amount such that a Ba-Cu-O based oxide superconducting thin film can be deposited.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1148805A JP2982964B2 (en) | 1989-06-12 | 1989-06-12 | Method for producing Y-Ba-Cu-O-based oxide superconducting thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1148805A JP2982964B2 (en) | 1989-06-12 | 1989-06-12 | Method for producing Y-Ba-Cu-O-based oxide superconducting thin film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0312321A true JPH0312321A (en) | 1991-01-21 |
JP2982964B2 JP2982964B2 (en) | 1999-11-29 |
Family
ID=15461103
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1148805A Expired - Lifetime JP2982964B2 (en) | 1989-06-12 | 1989-06-12 | Method for producing Y-Ba-Cu-O-based oxide superconducting thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2982964B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0492814A (en) * | 1990-03-21 | 1992-03-25 | Korea Advanced Inst Of Sci Technol | Production of high temperature superconducting thin film |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01215712A (en) * | 1988-02-25 | 1989-08-29 | Matsushita Electric Ind Co Ltd | Production of thin film of superconductor |
-
1989
- 1989-06-12 JP JP1148805A patent/JP2982964B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01215712A (en) * | 1988-02-25 | 1989-08-29 | Matsushita Electric Ind Co Ltd | Production of thin film of superconductor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0492814A (en) * | 1990-03-21 | 1992-03-25 | Korea Advanced Inst Of Sci Technol | Production of high temperature superconducting thin film |
Also Published As
Publication number | Publication date |
---|---|
JP2982964B2 (en) | 1999-11-29 |
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