JPH03101556U - - Google Patents

Info

Publication number: JPH03101556U
Authority: JP; Japan
Prior art keywords: drain electrode; source; layer; semiconductor layer; gate
Prior art date: 1990-02-05
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP986790U

Other languages

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1990-02-05

Filing date

1990-02-05

Publication date

1991-10-23

1990-02-05 Application filed filed Critical

1990-02-05 Priority to JP986790U priority Critical patent/JPH03101556U/ja

1991-10-23 Publication of JPH03101556U publication Critical patent/JPH03101556U/ja

Status Pending legal-status Critical Current

Links

239000010409 thin film Substances 0.000 claims description 4
239000010408 film Substances 0.000 claims description 3
239000004065 semiconductor Substances 0.000 claims description 3
239000000758 substrate Substances 0.000 claims description 2
238000007743 anodising Methods 0.000 claims 1
235000015067 sauces Nutrition 0.000 claims 1
238000004519 manufacturing process Methods 0.000 description 1
238000000034 method Methods 0.000 description 1

Landscapes

Thin Film Transistor (AREA)

JP986790U 1990-02-05 1990-02-05 Pending JPH03101556U (ko)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP986790U JPH03101556U (ko)	1990-02-05	1990-02-05

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP986790U JPH03101556U (ko)	1990-02-05	1990-02-05

Publications (1)

Publication Number	Publication Date
JPH03101556U true JPH03101556U (ko)	1991-10-23

Family

ID=31513453

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP986790U Pending JPH03101556U (ko)	1990-02-05	1990-02-05

Country Status (1)

Country	Link
JP (1)	JPH03101556U (ko)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2011077966A1 (en) *	2009-12-25	2011-06-30	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
JP2015026859A (ja) *	2010-02-26	2015-02-05	株式会社半導体エネルギー研究所	半導体装置
JP2015122510A (ja) *	2010-02-26	2015-07-02	株式会社半導体エネルギー研究所	半導体装置
JP2015167247A (ja) *	2009-12-04	2015-09-24	株式会社半導体エネルギー研究所	半導体素子
JP2015173277A (ja) *	2009-12-25	2015-10-01	株式会社半導体エネルギー研究所	半導体装置
KR20150123718A (ko) *	2014-04-25	2015-11-04	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제작 방법
JP2017092492A (ja) *	2009-12-25	2017-05-25	株式会社半導体エネルギー研究所	半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS61147574A (ja) *	1984-12-21	1986-07-05	Asahi Glass Co Ltd	薄膜トランジスタ

1990
- 1990-02-05 JP JP986790U patent/JPH03101556U/ja active Pending

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS61147574A (ja) *	1984-12-21	1986-07-05	Asahi Glass Co Ltd	薄膜トランジスタ

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2015167247A (ja) *	2009-12-04	2015-09-24	株式会社半導体エネルギー研究所	半導体素子
JP2017092492A (ja) *	2009-12-25	2017-05-25	株式会社半導体エネルギー研究所	半導体装置
JP2013030783A (ja) *	2009-12-25	2013-02-07	Semiconductor Energy Lab Co Ltd	半導体装置
JP2019195099A (ja) *	2009-12-25	2019-11-07	株式会社半導体エネルギー研究所	半導体装置
US9006025B2 (en)	2009-12-25	2015-04-14	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
WO2011077966A1 (en) *	2009-12-25	2011-06-30	Semiconductor Energy Laboratory Co., Ltd.	Semiconductor device and method for manufacturing the same
JP2015173277A (ja) *	2009-12-25	2015-10-01	株式会社半導体エネルギー研究所	半導体装置
JP2018182350A (ja) *	2009-12-25	2018-11-15	株式会社半導体エネルギー研究所	半導体装置
JP2018110273A (ja) *	2009-12-25	2018-07-12	株式会社半導体エネルギー研究所	半導体装置
KR20180066266A (ko) *	2009-12-25	2018-06-18	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치
US9543445B2 (en)	2009-12-25	2017-01-10	Semiconductor Energy Laborartory Co., Ltd.	Semiconductor device with oxide semiconductor layer
JP2017017341A (ja) *	2009-12-25	2017-01-19	株式会社半導体エネルギー研究所	半導体装置
JP2015122510A (ja) *	2010-02-26	2015-07-02	株式会社半導体エネルギー研究所	半導体装置
JP2016171355A (ja) *	2010-02-26	2016-09-23	株式会社半導体エネルギー研究所	半導体装置の作製方法
JP2015026859A (ja) *	2010-02-26	2015-02-05	株式会社半導体エネルギー研究所	半導体装置
JP2015216367A (ja) *	2014-04-25	2015-12-03	株式会社半導体エネルギー研究所	半導体装置及びその作製方法
KR20150123718A (ko) *	2014-04-25	2015-11-04	가부시키가이샤 한도오따이 에네루기 켄큐쇼	반도체 장치 및 그 제작 방법

Publication	Publication Date	Title
JPH03101556U (ko)	1991-10-23
JPH02140863U (ko)	1990-11-26
JPH0479424U (ko)	1992-07-10
JPH02118954U (ko)	1990-09-25
JPH03101557U (ko)	1991-10-23
JPH0342124U (ko)	1991-04-22
JPH03101518U (ko)	1991-10-23
JPH0342123U (ko)	1991-04-22
JPH02137054U (ko)	1990-11-15
JPS63174464U (ko)	1988-11-11
JPH0258347U (ko)	1990-04-26
JPS6221558U (ko)	1987-02-09
JPS62151769U (ko)	1987-09-26
JPH01154629U (ko)	1989-10-24
JPS62204354U (ko)	1987-12-26
JPH0221735U (ko)	1990-02-14
JPH0262419U (ko)	1990-05-10
JPS63114046U (ko)	1988-07-22
JPH0476034U (ko)	1992-07-02
JPS63167755U (ko)	1988-11-01
JPS63132457U (ko)	1988-08-30
JPS63118249U (ko)	1988-07-30
JPH0328762U (ko)	1991-03-22
JPS63177051U (ko)	1988-11-16
JPS6018558U (ja)	1985-02-07	薄膜トランジスタ素子