JPH0297678A - Wear resistant aluminum material and production thereof - Google Patents
Wear resistant aluminum material and production thereofInfo
- Publication number
- JPH0297678A JPH0297678A JP63246784A JP24678488A JPH0297678A JP H0297678 A JPH0297678 A JP H0297678A JP 63246784 A JP63246784 A JP 63246784A JP 24678488 A JP24678488 A JP 24678488A JP H0297678 A JPH0297678 A JP H0297678A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- film
- tungsten
- tungsten carbide
- atomic ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 49
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 49
- 239000000463 material Substances 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title description 4
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims abstract description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000001257 hydrogen Substances 0.000 claims abstract description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 6
- 239000010937 tungsten Substances 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 6
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 9
- 229930195733 hydrocarbon Natural products 0.000 abstract description 2
- 150000002430 hydrocarbons Chemical class 0.000 abstract description 2
- 239000004215 Carbon black (E152) Substances 0.000 abstract 1
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 24
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910018134 Al-Mg Inorganic materials 0.000 description 1
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 229910018467 Al—Mg Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 239000004035 construction material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000009436 residential construction Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Landscapes
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、タングステンカーバイト層を有する耐摩耗性
材料およびその製造法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a wear-resistant material having a tungsten carbide layer and a method for producing the same.
[従来技術1
従来よりアルミニウムは、その軽量性、強度、耐食性、
加工性等から家庭電気製品、電子部品、熱交換器、エア
コン、冷蔵庫、自動車用部品、コンピューター用部品、
複写機、プリンター、ファクシミリ、住宅用建築材料、
エフステリア製品、ビル、土木製品あるいはスポーツ・
レジャー用品等の幅広い用途に使用されているが、アル
ミニウムは優れた物性を有する半面、表面硬度が十分で
はなく、耐摩耗性が著しく低いという欠点がある。[Prior Art 1 Aluminum has traditionally been known for its lightness, strength, corrosion resistance,
Due to its workability, it can be used for home appliances, electronic parts, heat exchangers, air conditioners, refrigerators, automobile parts, computer parts,
Copy machines, printers, facsimiles, residential building materials,
Efsteria products, buildings, civil engineering products or sports/
Aluminum is used in a wide range of applications such as leisure goods, but while it has excellent physical properties, it has the drawbacks of insufficient surface hardness and extremely low wear resistance.
そのためアルミニウムおよびその合金の表面に陽極酸化
法により硬質膜を形成(アルマイト処理)することによ
り、耐摩耗性を向上させる方法が用いられている。さら
に最近では、アルミニウムおよびその合金の表面に無電
解メツキによりニッケル系のメツキを形成したのち、上
記硬質膜よりもさらに耐摩耗性の優れたタングステンカ
ーバイト層を化学蒸着法により形成する方法が提案され
ている(特開昭62−205275号、特開昭62−2
18567号、特開昭62−290871号公報)、シ
かしながらアルミニウムは、はとんどの金属よりも電極
電位が著しく負であるため、良好なメツキが得られにく
いという問題点があり、また、化学蒸着の前にメツキ工
程を設けなくてはならず、いずれにしても繁雑なもので
ある。Therefore, a method is used to improve wear resistance by forming a hard film on the surface of aluminum and its alloys by anodic oxidation (alumite treatment). Furthermore, recently, a method has been proposed in which a nickel-based plating is formed by electroless plating on the surface of aluminum and its alloys, and then a tungsten carbide layer, which has even better wear resistance than the above-mentioned hard film, is formed by chemical vapor deposition. (Japanese Patent Application Laid-Open No. 62-205275, JP-A No. 62-2
18567, Japanese Unexamined Patent Publication No. 62-290871) However, aluminum has a problem that it is difficult to obtain good plating because the electrode potential is significantly more negative than that of most metals. However, a plating process must be provided before chemical vapor deposition, which is complicated in any case.
[問題点を解決するための具体的手段]本発明者らは、
前記した従来法の問題点に鑑み、鋭意検討の結果、アル
ミニウム含有量の極めて高いアルミニウム表面には化学
蒸着法により直接タングステンカーバイトが良好に被着
することを見出し、本発明に至ったものである。すなわ
ち本発明は、純度が98重量%以上であるアルミニウム
の表面にタングステンカーバイト層が直接被着してなる
耐摩耗性アルミニウム材料であり、その製造法は6フッ
化タングステン、芳香族炭化水素、および水素の混合比
率をカーボンのタングステンに対する原子比で2〜10
、水素のカーボンに対する原子比で3以上となるように
した混合ガスを反応温度250〜500℃の範囲で、純
度が98重量%以・上であるアルミニウム上に化学蒸着
する方法である。[Specific means for solving the problem] The present inventors
In view of the problems of the conventional method described above, as a result of intensive studies, it was discovered that tungsten carbide can be directly deposited successfully on aluminum surfaces with extremely high aluminum content by chemical vapor deposition, leading to the present invention. be. That is, the present invention is a wear-resistant aluminum material in which a tungsten carbide layer is directly adhered to the surface of aluminum having a purity of 98% by weight or more, and its manufacturing method is based on tungsten hexafluoride, aromatic hydrocarbons, and the mixing ratio of hydrogen is 2 to 10 in terms of the atomic ratio of carbon to tungsten.
In this method, a mixed gas having an atomic ratio of hydrogen to carbon of 3 or more is chemically deposited on aluminum having a purity of 98% by weight or more at a reaction temperature of 250 to 500°C.
本発明の基材となるアルミニウムとしては、その純度が
98重量%以上であることが必要であり、この範囲未満
の純度のアルミニウム材料を用いた場合には密着性の良
好な被膜が得られないものである。アルミニウム系材料
としては純アルミニウムと称して市販されている純度9
8重量%以上の材料のほか、銅、マグネシウム、亜鉛、
あるいは珪素を主として含む各種のアルミニウム合金が
知られており、−船釣にはアルミニウム純度として90
〜97重量%程度の範囲のものである。The aluminum that serves as the base material of the present invention must have a purity of 98% by weight or more, and if an aluminum material with a purity below this range is used, a film with good adhesion cannot be obtained. It is something. As an aluminum-based material, purity 9 is commercially available as pure aluminum.
In addition to materials with a content of 8% by weight or more, copper, magnesium, zinc,
Alternatively, various aluminum alloys containing mainly silicon are known, and for boat fishing the aluminum purity is 90.
It is in the range of about 97% by weight.
本発明において、かかるアルミニウム合金を用いた場合
、密着性の良好な膜が得られない理由は定かではないが
、合金中に存在する各種金属が原料ガス成分である6フ
ッ化タングステンに由来するフッ素ふん囲気により、変
性を受け、このものが合金表面に存在した状態でタング
ステンカーバイトがデポジットされることとなり、密着
性の良好な膜が得られないものと考えられる。In the present invention, when such an aluminum alloy is used, the reason why a film with good adhesion cannot be obtained is not clear, but various metals present in the alloy contain fluorine derived from tungsten hexafluoride, which is a raw material gas component. It is thought that the tungsten carbide is deposited while being denatured by the ambient air and present on the alloy surface, making it impossible to obtain a film with good adhesion.
本発明においては純度98重量%以上のアルミニウムを
用いてその表面に化学蒸着法によりタングステンカーバ
イト層を被覆するものであり、カーボン源としての芳香
族炭化水素としてはベンゼン、トルエン、キシレン等の
各種の芳香族炭化水素が挙げられるが、蒸気圧が高く供
給の容易さ等の理由からベンゼンが最も好ましい、これ
ら芳香族炭化水素の使用量は、この分子中のカーボンと
原料の6フッ化タングステンのタングステンとの比(C
/Wi原子比)が2〜10の範囲となるように選ばれる
。芳香族炭化水素の量がこの範囲よりも小さくなる場合
には、W3C単一膜が得られにくく、タングステン(W
)との混合膜として得られ、W3C単一膜と比較して光
沢、耐摩耗性等の物性が劣り、好ましくない、また、こ
の範囲より大きくなっても特に不都合はないが、原料の
芳香族炭化水素がむだとなるためこの範囲以下が好まし
い。In the present invention, a tungsten carbide layer is coated on the surface of aluminum with a purity of 98% by weight or more by chemical vapor deposition, and various aromatic hydrocarbons such as benzene, toluene, and xylene are used as the carbon source. Among these aromatic hydrocarbons, benzene is the most preferred because of its high vapor pressure and ease of supply. Ratio to tungsten (C
/Wi atomic ratio) is selected to be in the range of 2 to 10. When the amount of aromatic hydrocarbons is smaller than this range, it is difficult to obtain a W3C single film, and tungsten (W3C) is difficult to obtain.
), which is undesirable as it has inferior physical properties such as gloss and abrasion resistance compared to W3C single film.Also, there is no particular disadvantage if the size exceeds this range, but the aromatic content of the raw material This range or less is preferable because hydrocarbons become wasteful.
本発明においては、水素の量も限定されるものである。In the present invention, the amount of hydrogen is also limited.
すなわち水素のカーボンに対する比(H/C;原子比)
が3以上であることが必要であり、これより小さい場合
には、WとW3Cとの混合膜が得られ、好ましくない。In other words, the ratio of hydrogen to carbon (H/C; atomic ratio)
is required to be 3 or more; if it is smaller than this, a mixed film of W and W3C will be obtained, which is not preferable.
本発明においては、これらの原料ガスのほかにアルゴン
等の不活性ガスをさらに添加して反応をおこなうことも
できるものである。In the present invention, in addition to these raw material gases, an inert gas such as argon may be further added to carry out the reaction.
本発明の反応温度は250〜500℃の範囲が好ましく
、250℃未満では良好なタングステンカーバイト層を
得ることができない、また、アルミニウムは耐熱性の比
較的低い材料であり、500℃を越えると基材であるア
ルミニウムに種々の悪影響を及ぼすため好ましくなく、
基材の反り等を避ける意味からもより好ましくは400
℃までの範囲でおこなうものである。The reaction temperature of the present invention is preferably in the range of 250 to 500°C; a good tungsten carbide layer cannot be obtained below 250°C, and aluminum is a material with relatively low heat resistance; It is undesirable because it has various negative effects on the base material aluminum.
More preferably 400 to avoid warping of the base material.
It is carried out in the range up to ℃.
本発明の原料ガス組成による化学蒸着法によればより耐
摩耗性に優れるW3C組成のタングステンカーバイト層
をより低温で形成できるため、アルミニウムの被覆には
最適のものである。According to the chemical vapor deposition method using the raw material gas composition of the present invention, it is possible to form a tungsten carbide layer having a W3C composition, which is more excellent in wear resistance, at a lower temperature, so it is most suitable for coating aluminum.
本発明においては、反応圧力は特に限定的ではないが、
大気圧でも十分に反応を行うことができることは大きな
特徴である。外観上の要求が特にないような用途におい
ては、膜堆積速度も大である大気圧下での反応が好適で
ある。この場合には反応装置も特殊なものを採用する必
要はなり、捏作も簡便となる。また、外観上の要求の厳
しい用途に対しては、減圧条件下で極めて良好な膜形成
が可能であり、表面光沢に優れた均質膜を得ることがで
きる。In the present invention, the reaction pressure is not particularly limited, but
A major feature is that the reaction can be carried out satisfactorily even at atmospheric pressure. In applications where there are no particular requirements for appearance, reaction at atmospheric pressure is preferred, as the film deposition rate is high. In this case, it is not necessary to use a special reaction device, and fabrication becomes easy. Furthermore, for applications with strict requirements on appearance, it is possible to form an extremely good film under reduced pressure conditions, and a homogeneous film with excellent surface gloss can be obtained.
また、本発明のタングステンカーバイト層の厚みは特に
限定的ではないが、基材のアルミニウムが柔らかいため
基材の影響を排除して十分な硬さの表面とするためには
20μm程度以上の膜厚とすることが好ましい、また、
上限は特にないが、あまりに厚くすると、基材のアルミ
ニウムとタングステンカーバイトとの熱膨張率の差によ
り反り等の不都合を生じることもあり、また、アルミニ
ウムの表面改質の目的からは、ある程度以上の膜厚は特
に必要でないとともに、当然膜形成に時間を要すること
となるため、60μm程度までとすることが好ましい。Further, the thickness of the tungsten carbide layer of the present invention is not particularly limited, but since the base material aluminum is soft, it is necessary to have a film of about 20 μm or more in order to eliminate the influence of the base material and obtain a sufficiently hard surface. It is preferable to make it thick, and
There is no upper limit, but if it is too thick, problems such as warping may occur due to the difference in thermal expansion coefficient between the base material aluminum and tungsten carbide.Also, for the purpose of surface modification of aluminum, The film thickness is not particularly necessary, and it naturally takes time to form the film, so it is preferably up to about 60 μm.
本発明の材料は表面硬度に起因する耐摩耗性のほか耐食
性についても優れたものであり、かかる特性を特に利用
したい場合には、必ずしも20μm程度の膜厚は必要で
はなり10μm程度で十分である。The material of the present invention has excellent corrosion resistance as well as abrasion resistance due to its surface hardness, and if such characteristics are particularly desired to be utilized, a film thickness of about 20 μm is not necessarily necessary, but a film thickness of about 10 μm is sufficient. .
以下、本発明を実施例により具体的に説明する。。Hereinafter, the present invention will be specifically explained with reference to Examples. .
実施例1
内径40c會、全長100 cm、均一温度領域長60
c鳳の反応器を具備した横型流通方式のCVD装置を用
い、原料ガスは反応器の一端の1つのノズルから導入し
、輻1 cm、長さ5cm、厚さ3t+aの基材試片を
均一温度領域の中央に設置して反応を行った。Example 1 Inner diameter 40cm, total length 100cm, uniform temperature range length 60cm
Using a horizontal flow type CVD equipment equipped with a C-Otori reactor, the raw material gas was introduced through one nozzle at one end of the reactor, and a base material specimen with a diameter of 1 cm, a length of 5 cm, and a thickness of 3 t+a was uniformly heated. The reaction was carried out by installing it in the center of the temperature range.
以下の実施例、比較例のいずれも同様にして反応を行っ
た。Reactions were carried out in the same manner in both Examples and Comparative Examples below.
6フッ化タングステン、ベンゼンおよび水素のモル比を
2.2:1:33(C/lil原子比−2,7,H/C
原子比=1))とした混合ガスを大気圧下、全流量7.
81 /+inで400℃に保たれた反応器に導入し、
この反応器内に置かれたアルミニウム片(JIS呼称1
)00純度99重量%以上、3厘謹厚、1 x 5 c
m)を1時間コーティングした。アルミニウム片上には
、約40μmの光沢のある膜が得られ、xm回折パター
ンからW3C単一膜であることを確認した。この膜は基
材に良好に密着しており、試料片を折り曲げても1、膜
は剥離しなかった。The molar ratio of tungsten hexafluoride, benzene and hydrogen was 2.2:1:33 (C/lil atomic ratio -2.7, H/C
Mixed gas with atomic ratio = 1)) under atmospheric pressure, total flow rate 7.
81/+in into a reactor maintained at 400°C,
An aluminum piece placed in this reactor (JIS designation 1
)00 Purity 99% by weight or more, 3 liters thick, 1 x 5 c
m) was coated for 1 hour. A shiny film of about 40 μm was obtained on the aluminum piece, and the xm diffraction pattern confirmed that it was a W3C single film. This film adhered well to the substrate, and even when the sample piece was bent, the film did not peel off.
実施例2
6フッ化タングステン、ベンゼンおよび水素のモル比を
1.4:1:10(C/W原子比−4,3,H/C原子
比−3,3)とした混合ガスを大気圧下、全流量2.1
4!/sinで300℃に保たれた反応器に導入し、こ
の反応器内に置かれたアルミニウム片(実施例1と同じ
)を2時間コーティングした。アルミニウム片上には、
約25μmの光沢のある膜が得られ、X線回折パターン
からW3C単一膜であることをi[した。Example 2 A mixed gas with a molar ratio of tungsten hexafluoride, benzene, and hydrogen of 1.4:1:10 (C/W atomic ratio -4.3, H/C atomic ratio -3.3) was heated to atmospheric pressure. Bottom, total flow rate 2.1
4! /sin into a reactor maintained at 300° C. and an aluminum piece (same as in Example 1) placed in this reactor was coated for 2 hours. On the aluminum piece,
A shiny film of about 25 μm was obtained, and it was determined from the X-ray diffraction pattern that it was a W3C single film.
この膜も実施例1と同様良好な密着状態であり、折り曲
げによっても膜の剥離はみられなかった。This film also had good adhesion as in Example 1, and no peeling of the film was observed even when it was bent.
実施例3
6フッ化タングステン、ベンゼンおよび水素のモル比を
2.7:1:42(C/−原子比−2,2,H/C原子
比−7,0)とした混合ガスを大気圧下、全流量7.6
17sinで250℃に保たれた反応器に導入し、この
反応器内に置かれたアルミニウム片(実施例1と同じ)
を3時間コーティングした。アルミニウム片上には、約
22μmの光沢のある膜が得られ、X線回折パターンか
らW3C単一膜であることをiI認した。Example 3 A mixed gas containing tungsten hexafluoride, benzene, and hydrogen at a molar ratio of 2.7:1:42 (C/- atomic ratio -2.2, H/C atomic ratio -7.0) was heated to atmospheric pressure. Bottom, total flow rate 7.6
An aluminum piece (same as in Example 1) was introduced into a reactor maintained at 250 °C at 17 sin and placed in this reactor.
was coated for 3 hours. A shiny film of approximately 22 μm was obtained on the aluminum piece, and was confirmed to be a W3C single film from the X-ray diffraction pattern.
膜の密着状態は実施例1と同様であった。The adhesion state of the film was the same as in Example 1.
実施例4
67フ化タングステン、ベンゼンおよび水素のモル比を
16=に233 (C/W原子比−0238,)l/C
原子比=78)とした混合ガスを大気圧下、全流量7.
51 /sinで400℃に保たれた反応器に導入し、
この反応器内に置□かれたアルミニウム片(実施例1と
同じ)を30分間コーティングした。アルミニウム片上
には、21#mのやや光沢のない膜が得られた。この膜
はX線回折パターンからWとW3Cの混合膜であること
を□確認した。この膜も密着状態は実施例1と同様であ
った。Example 4 The molar ratio of 67 tungsten fluoride, benzene and hydrogen was set to 16 = 233 (C/W atomic ratio -0238,) l/C
Mixed gas with atomic ratio = 78) at atmospheric pressure, total flow rate 7.
51/sin into a reactor maintained at 400°C,
An aluminum piece (same as Example 1) placed inside the reactor was coated for 30 minutes. A slightly matte film of 21#m was obtained on the aluminum piece. It was confirmed from the X-ray diffraction pattern that this film was a mixed film of W and W3C. The adhesion state of this film was also the same as in Example 1.
実施例5
6フッ化タングステン、ベンゼンおよび水素のモル比を
2.9:1:8.DC/WC/化−2,8,H/C原子
比−2,7)とした混合ガスを大気圧下、全流量1.o
1/■inで400℃に保たれた反応器に導入し、この
反応器内に置かれたアルミニウム片(実施例1と同じ)
を1時間コーティングした。アルミニウム片上には、3
0ymの光沢はあるが若干青みがかった膜が得られた。Example 5 The molar ratio of tungsten hexafluoride, benzene and hydrogen was 2.9:1:8. A mixed gas with a DC/WC/chemical ratio of -2,8 and a H/C atomic ratio of -2,7) was heated under atmospheric pressure at a total flow rate of 1. o
An aluminum piece (same as in Example 1) was introduced into a reactor maintained at 400°C at 1/■in and placed in the reactor.
was coated for 1 hour. On the aluminum piece, there are 3
A glossy but slightly bluish film of 0 ym was obtained.
この膜はX線回折パターンからWとW3Cの混合膜であ
ることを1認した。この膜も密着状態は実施例1と同様
であった。It was confirmed from the X-ray diffraction pattern that this film was a mixed film of W and W3C. The adhesion state of this film was also similar to that of Example 1.
実施例6
6フッ化タングステン、ベンゼンおよび水素のモル比を
1.7:1:3HC/−原子比−3,5,H/C原子比
−10)とした混合ガスを全圧90Torrで、全流量
2.417sinで400℃に保たれた反応器に導入し
、この反応器内に置かれたアルミニウム片(実施例1と
同じ)を2時間コーティングした。アルミニウム片上に
は、20μmの光沢のある膜が得られ、X線回折パター
ンからW3C単一膜であることを確認した。また、得ら
れた膜は実施例1、実施例2、実施例3で得られた膜と
比較して、より均一、滑らかで光沢のある膜であり、密
着状態は、実施例1と同様であった。Example 6 A mixed gas containing tungsten hexafluoride, benzene, and hydrogen in a molar ratio of 1.7:1:3 (HC/- atomic ratio -3.5, H/C atomic ratio -10) was heated at a total pressure of 90 Torr. It was introduced into a reactor maintained at 400° C. at a flow rate of 2.417 sin, and an aluminum piece (same as in Example 1) placed in this reactor was coated for 2 hours. A 20 μm shiny film was obtained on the aluminum piece, and the X-ray diffraction pattern confirmed that it was a W3C single film. Furthermore, the obtained film was more uniform, smooth, and glossy than the films obtained in Example 1, Example 2, and Example 3, and the adhesion state was the same as in Example 1. there were.
実施例7
反応温度を300°Cとし、コーティング時間を3時間
とする以外は実施例6と同様にして膜形成を行った結果
、膜厚15μmのW3C単一膜が得られた。この膜の外
観は実施例6で得た膜と比較してほとんど差がなく、密
着状態にも差はなかった。Example 7 A film was formed in the same manner as in Example 6 except that the reaction temperature was 300° C. and the coating time was 3 hours. As a result, a W3C single film with a thickness of 15 μm was obtained. There was almost no difference in the appearance of this film compared to the film obtained in Example 6, and there was no difference in the state of adhesion.
比較例1
基材をAl−Cu系合金(JIS 2017、アルミニ
ウム純度94重量%)とする以外は実施例1と同様にし
て化学蒸着をおこなった0反応終了後、CVD装置から
取り出したところタングステンカーバイト層は基材から
剥離していた。Comparative Example 1 Chemical vapor deposition was performed in the same manner as in Example 1 except that the base material was an Al-Cu alloy (JIS 2017, aluminum purity 94% by weight). After the completion of the reaction, a tungsten carton was removed from the CVD apparatus. The bite layer had peeled off from the base material.
比較例2
基材をAl−Mg系合金(JIS 5083、アルミニ
ウム純度93重量%)とする以外は実施例1と同様して
化学蒸着をおこない、膜厚3BμmのW3C単一膜が得
られた。この被覆材を折り曲げたところタングステンカ
ーバイト膜は簡単に基材から剥離した。Comparative Example 2 Chemical vapor deposition was carried out in the same manner as in Example 1 except that the base material was an Al-Mg alloy (JIS 5083, aluminum purity 93% by weight), and a W3C single film with a thickness of 3 Bμm was obtained. When this coating material was bent, the tungsten carbide film was easily peeled off from the base material.
比較例3
基材をAI−MS−5i系合金(JIS 6061、ア
ルミニウム純度97重量%)とする以外は実施例1と同
様して化学蒸着をおこない、膜厚42μmのW3C単一
膜が得られた。この被覆材を折り曲げたところタングス
テンカーバイト膜は部分的に基材から剥離した。Comparative Example 3 Chemical vapor deposition was carried out in the same manner as in Example 1 except that the base material was an AI-MS-5i alloy (JIS 6061, aluminum purity 97% by weight), and a W3C single film with a thickness of 42 μm was obtained. Ta. When this coating material was bent, the tungsten carbide film was partially peeled off from the base material.
[発明の効果]
本発明によれば、軽(、耐食性、加工性、導電性等に優
れた材料でアルミニウムの欠点である表面硬度が低い点
を改善することができ、簡単且つ確実に耐摩耗性に優れ
たタングステンカーバイトを密着性よく被着することが
できるもであり、家庭電気製品、電子部品、熱交換器、
エアコン、冷蔵庫、自動車用部品、コンピューター用部
品、複写機、プリンター、ファクシミリ、住宅用建築材
料、エフステリア製品、ビル、土木製品あるいはスポー
ツ・レジャー用品等の幅広い用途で、表面の耐摩耗性が
要求される分野において極めて有用なものである。[Effects of the Invention] According to the present invention, it is possible to improve the low surface hardness, which is a drawback of aluminum, by using a material that is lightweight, has excellent corrosion resistance, workability, conductivity, etc., and easily and reliably improves wear resistance. Tungsten carbide, which has excellent properties, can be adhered with good adhesion to home appliances, electronic components, heat exchangers,
Abrasion resistance on the surface is required in a wide range of applications such as air conditioners, refrigerators, automobile parts, computer parts, copying machines, printers, facsimile machines, residential construction materials, Efsteria products, buildings, civil engineering products, and sports and leisure goods. It is extremely useful in the field of
Claims (2)
面にタングステンカーバイト層が直接被着してなる耐摩
耗性アルミニウム材料。(1) A wear-resistant aluminum material in which a tungsten carbide layer is directly adhered to the surface of aluminum having a purity of 98% by weight or more.
び水素の混合比率をカーボンのタングステンに対する原
子比で2〜10、水素のカーボンに対する原子比で3以
上となるようにした混合ガスを反応温度250〜500
℃の範囲で、純度が98重量%以上であるアルミニウム
上に化学蒸着することを特徴とする耐摩耗性アルミニウ
ム材料の製造法。(2) A mixed gas containing tungsten hexafluoride, an aromatic hydrocarbon, and hydrogen such that the atomic ratio of carbon to tungsten is 2 to 10 and the atomic ratio of hydrogen to carbon is 3 or more is heated to a reaction temperature of 250 ~500
A process for producing a wear-resistant aluminum material, characterized in that it is chemically vapor deposited on aluminum with a purity of 98% by weight or more in the range of 0.degree.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63246784A JP2537276B2 (en) | 1988-09-30 | 1988-09-30 | Abrasion resistant aluminum material and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63246784A JP2537276B2 (en) | 1988-09-30 | 1988-09-30 | Abrasion resistant aluminum material and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0297678A true JPH0297678A (en) | 1990-04-10 |
JP2537276B2 JP2537276B2 (en) | 1996-09-25 |
Family
ID=17153617
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63246784A Expired - Fee Related JP2537276B2 (en) | 1988-09-30 | 1988-09-30 | Abrasion resistant aluminum material and its manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2537276B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6800383B1 (en) * | 1999-02-11 | 2004-10-05 | Hardide Limited | Tungsten carbide coating and method for producing the same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62219322A (en) * | 1986-03-20 | 1987-09-26 | Victor Co Of Japan Ltd | Magnetic disk substrate |
JPS62252518A (en) * | 1986-04-24 | 1987-11-04 | Victor Co Of Japan Ltd | Magnetic recording medium and its production |
-
1988
- 1988-09-30 JP JP63246784A patent/JP2537276B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62219322A (en) * | 1986-03-20 | 1987-09-26 | Victor Co Of Japan Ltd | Magnetic disk substrate |
JPS62252518A (en) * | 1986-04-24 | 1987-11-04 | Victor Co Of Japan Ltd | Magnetic recording medium and its production |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6800383B1 (en) * | 1999-02-11 | 2004-10-05 | Hardide Limited | Tungsten carbide coating and method for producing the same |
Also Published As
Publication number | Publication date |
---|---|
JP2537276B2 (en) | 1996-09-25 |
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