JPH0294566A - Solid-state image sensing device - Google Patents
Solid-state image sensing deviceInfo
- Publication number
- JPH0294566A JPH0294566A JP63245990A JP24599088A JPH0294566A JP H0294566 A JPH0294566 A JP H0294566A JP 63245990 A JP63245990 A JP 63245990A JP 24599088 A JP24599088 A JP 24599088A JP H0294566 A JPH0294566 A JP H0294566A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- solid
- shield layer
- light shield
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910000423 chromium oxide Inorganic materials 0.000 claims abstract description 8
- 238000003384 imaging method Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 abstract description 7
- 239000011651 chromium Substances 0.000 abstract description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 4
- 239000007787 solid Substances 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 230000003449 preventive effect Effects 0.000 abstract 2
- 238000002310 reflectometry Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 41
- 230000003287 optical effect Effects 0.000 description 6
- 238000000605 extraction Methods 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- -1 etc. Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、固体撮像装置に係わり、特に固体撮像素子チ
ップ上に光導電膜を積層した積層型固体撮像装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a solid-state imaging device, and particularly to a stacked solid-state imaging device in which a photoconductive film is stacked on a solid-state imaging element chip.
（従来の技術）
近年、固体撮像装置の多画素化の進展に伴い、光を受光
するフォトダイオードの面積が益々小さくなり、取扱う
信号電荷量も少なくなっている。(Prior Art) In recent years, with the progress of increasing the number of pixels in solid-state imaging devices, the area of photodiodes that receive light has become smaller and smaller, and the amount of signal charges handled has also become smaller.
このことは、必然的にＳＮ比の低下を招き、深刻な問題
となっている。これを解決する一手段として、感光部を
ＣＣＤ撮像素子チップ上に立体的に配置する光導電膜積
層型固体撮像装置が提案されている。This inevitably leads to a decrease in the signal-to-noise ratio, which is a serious problem. As a means to solve this problem, a photoconductive film stacked solid-state imaging device has been proposed in which a photosensitive section is three-dimensionally arranged on a CCD imaging element chip.
第３図は従来の光導電膜積層型固体撮像装置の概略構成
を示す断面図である。ｐ型Ｓｔ基板１０にｎ−型の埋込
みチャネルＣＣＤ （垂直ＣＣＤ１１、ｎ＋型の蓄積ダ
イオード１２及びｐ＋型チャネルストッパ１３が形成さ
れ、垂直ＣＯＤＩＩ上には転送用ゲート電極となるポリ
Ｓｉ電極１４゜１５が形成されている。蓄積ダイオード
１２の部分では、熱酸化膜、ＣＶＤ酸化膜等からなる酸
化膜１６に、蓄積ダイオード１２のｎ＋部分が露出する
ようにコンタクトホールが形成された後、例えば八βや
Ｍ ｏ Ｓ ｉ等による引出し電極１８が所定の形状に
形成される。次いで、例えばポリイミド或いはメルト工
程を通したＢＰＳＧ （ボロン・リン・シリケートガラ
ス）等からなる表面平坦化膜１９が形成され、さらにこ
の膜１９にコンタクトホールを形成して引出し電極１８
の一部を露出させた後、Ａｌ或いはＴｊ等の画素電極２
１が所定の形状に形成される。FIG. 3 is a sectional view showing the schematic structure of a conventional photoconductive film stacked solid-state imaging device. An n-type buried channel CCD (vertical CCD 11, an n+ type storage diode 12, and a p+ type channel stopper 13) are formed on a p-type St substrate 10, and a poly-Si electrode 14°15 serving as a transfer gate electrode is formed on the vertical CODII. In the storage diode 12 part, a contact hole is formed in the oxide film 16 made of a thermal oxide film, a CVD oxide film, etc. so that the n+ part of the storage diode 12 is exposed, and then, for example, 8β An extraction electrode 18 is formed in a predetermined shape using a material such as or MoSi.Next, a surface flattening film 19 made of, for example, polyimide or BPSG (boron phosphorus silicate glass) through a melt process is formed. Further, a contact hole is formed in this film 19 to form an extraction electrode 18.
After exposing a part of the pixel electrode 2 of Al or Tj,
1 is formed into a predetermined shape.
このように形成された固体撮像素子チップ上に、アモル
ファスＳｔ等の光導電膜２２をグロー放電や先ＣＶＤ法
で形成し、さらにＩＴＯ（インジウム・スズ・酸化膜）
等の透明電極２３及び光シールド層２５を形成すること
により積層型固体撮像装置が？Ｌ＋られる。ここで、光
シールド層２５は、画素電極２１の間隙を覆うように形
成され、材料としてはＣｒ、Ｍｏ、Ｔｉ等が用いられて
いる。A photoconductive film 22 of amorphous St or the like is formed on the solid-state image sensor chip formed in this manner by glow discharge or a pre-CVD method, and then ITO (indium tin oxide film) is formed.
By forming a transparent electrode 23 and a light shield layer 25, a stacked solid-state imaging device can be obtained. L+ is received. Here, the light shield layer 25 is formed to cover the gap between the pixel electrodes 21, and is made of Cr, Mo, Ti, or the like.
また、光シールド層２５のうち、２５１はオプティカル
ブラック用の光シールド層で、２５□。Further, among the light shield layers 25, 251 is a light shield layer for optical black, and is 25□.
２５、はスミア低減のための先シールド層である。25 is a pre-shield layer for reducing smear.
しかしながら、この種の装置にあっては次のような問題
があった。即ち、入射光の一部が光シールド層２５ （
２５１，２５□、２５３）の裏面での反射と画素電極２
１での反射による多重反射によって、固体撮像素子チッ
プ側に光が漏れ込み、オプティカルブラック部の先シー
ルド層２５．及びスミア低減のために設けた光シールド
層２５２゜２５、の光シールド効果を低下させてしまう
問題があった。However, this type of device has the following problems. That is, a part of the incident light passes through the optical shield layer 25 (
251, 25□, 253) and the reflection on the back surface of pixel electrode 2
Due to multiple reflections caused by reflection at 25.1, light leaks to the solid-state image sensor chip side, and the optical black portion is exposed to the shield layer 25.1. There is also a problem in that the light shielding effect of the light shield layer 252.25 provided to reduce smear is reduced.
（発明が解決しようとする課題）
このように従来、光導電膜上に金属祠料等からなる光シ
ールド層を形成した積層型固体撮像装置においては、光
シールド層と画素′ｒ＋Ｓｌ！！！ｉとの間の多重反射
により固体撮像素子チップ側へ光層れが生じ、これが先
シールド効果を低減させる要因となっていた。(Problem to be Solved by the Invention) As described above, in the conventional stacked solid-state imaging device in which a light shield layer made of a metal abrasive or the like is formed on a photoconductive film, the light shield layer and the pixel 'r+Sl! ! ! Due to multiple reflections with respect to the solid-state image sensor chip, optical layer deviation occurs toward the solid-state image sensor chip, which is a factor that reduces the front shielding effect.
本発明は、上記事情を考慮してなされたもので、その［
１的とするところは、光シールド層と画素電極との間の
多重反射に起因する光漏れを低減することができ、スミ
アのより一層の低減をはかりｉする固体撮像装置を提供
することにある。The present invention has been made in consideration of the above circumstances.
One objective is to provide a solid-state imaging device that can reduce light leakage caused by multiple reflections between a light shield layer and a pixel electrode, and further reduces smear. .
［発明の構成］
（課題を解決するための手段）
本発明の骨子は、透明電極と光シールド層との間に反射
率の小さい材料からなる膜を設け、光ンールド層側にお
ける反射を防止（若しくは低減）することにある。[Structure of the Invention] (Means for Solving the Problems) The gist of the present invention is to provide a film made of a material with low reflectance between the transparent electrode and the light shield layer to prevent reflection on the light shield layer side ( or reduction).
即ち本発明は、半導体基板に信号電荷蓄積ダイオード及
び信号電荷転送部が形成され、且つ最上部に信号電荷蓄
積ダイオードに電気的に接続された画素電極が形成され
た固体撮像素子チップと、この固体撮像索子チップ上に
積層された光導電膜と、この光導電膜上に形成された透
明電極と、この透明電極上に前記画素電極の間隙を覆う
ように形成された光シールド層とを備えた固体撮像装置
において、前記光シールド層と透明電極との間に、光シ
ールド層よりも光に対する反射率の小さな材料からなる
反射防止膜を設けるようにしたものである。That is, the present invention provides a solid-state image sensor chip in which a signal charge storage diode and a signal charge transfer section are formed on a semiconductor substrate, and a pixel electrode electrically connected to the signal charge storage diode is formed on the top, and this solid state image sensor chip. A photoconductive film laminated on an imaging probe chip, a transparent electrode formed on the photoconductive film, and a light shield layer formed on the transparent electrode so as to cover the gap between the pixel electrodes. In the solid-state imaging device, an antireflection film made of a material having a lower reflectance to light than the light shield layer is provided between the light shield layer and the transparent electrode.
（作 用）
本発明によれば、光シールド層と透明電極との間に、光
シールド層よりも小さな反射率の反射防止膜が存在する
ので、光シールド層と画素電極との間に起こる多重反射
による光の漏れ量が少なくなり、光シールド効果の向上
をはかることが可能となる。(Function) According to the present invention, since an antireflection film having a smaller reflectance than the light shield layer is present between the light shield layer and the transparent electrode, multiplexing occurs between the light shield layer and the pixel electrode. The amount of light leaking due to reflection is reduced, making it possible to improve the light shielding effect.
（実施例） 以下、本発明の詳細を図示の実施例によって説明する。(Example) Hereinafter, details of the present invention will be explained with reference to illustrated embodiments.
第１図は本発明の一実施例に係わる光導電膜積層型固体
撮像装置の概略構成を示す断面図である。FIG. 1 is a sectional view showing a schematic configuration of a photoconductive film stacked solid-state imaging device according to an embodiment of the present invention.
この装置が第３図と異なる点は、光シールド層と透明電
極との間に、クロム等からなる反射防止膜を設けたこと
にある。即ち、ＩＴＯ等からなる透明電極２３とクロム
等からなる光シールド層２５（２５□、２５□＋ ２
５３ ）との間に酸化クロム等からなる反射防止膜２４
（２４，，２４□。This device differs from FIG. 3 in that an antireflection film made of chromium or the like is provided between the light shield layer and the transparent electrode. That is, a transparent electrode 23 made of ITO or the like and a light shield layer 25 (25□, 25□+2
53) and an antireflection film 24 made of chromium oxide, etc.
(24,,24□.
２４．）が形成されている。ここで、酸化クロムはクロ
ムに比べて反射率が十分に小さいものであるから、反射
防止膜２４の存在により光シールド層２５側での反射は
少ないものとなり、光シールド層２５と画素電極２１と
の間の多重反射を低減することができる。24. ) is formed. Here, since chromium oxide has a sufficiently lower reflectance than chromium, the presence of the antireflection film 24 reduces reflection on the light shield layer 25 side, and the light shield layer 25 and pixel electrode 21 It is possible to reduce multiple reflections between.
次に、上記装置の製造工程について第２図を参照して説
明する。Next, the manufacturing process of the above device will be explained with reference to FIG. 2.
まず、第２図（ａ）に示す如く、ｐ型シリコン基板１０
の表面層にｎ−型の埋込みチャネルＣＣＤからなる垂直
ＣＣＤＩＩ、ｎ＋型の蓄積ダイオード１２及び各画素を
分離するためのｐ＋型チャネルストッパ１３を形成し、
さらに垂直ＣＣＤＩ ｌ上にはゲート酸化膜を介して転
送用ゲート電極となるポリＳｔ電極１４．１５を形成す
る。続いて、ＣＶＤ法で５ｉｎ２絶縁膜１６を堆積した
後、図示しないレジストパターンを用いて選択エツチン
グし、蓄積ダイオード１２の一部が露出するように絶縁
膜１６に第１のコンタクトホール１７を形成する。First, as shown in FIG. 2(a), a p-type silicon substrate 10
A vertical CCD II consisting of an n-type buried channel CCD, an n+-type storage diode 12, and a p+-type channel stopper 13 for separating each pixel are formed on the surface layer of the pixel.
Furthermore, polySt electrodes 14 and 15, which serve as transfer gate electrodes, are formed on the vertical CCDI 1 via a gate oxide film. Subsequently, a 5 in 2 insulating film 16 is deposited by the CVD method, and then selectively etched using a resist pattern (not shown) to form a first contact hole 17 in the insulating film 16 so that a part of the storage diode 12 is exposed. .
次いで、第２図（１１）に示す如く、例えばモリブデン
ポリサイドを用いて引出し電極１８を形成したのち、全
面にＣＶＤ法でＢＰＳＧ絶縁膜１９を堆積し、さらにこ
の絶縁膜１９の表面を平滑化する。続いて、引出し電極
１８の一部が露出するように絶縁膜１９に第２コンタク
トホール２０を形成し、例えばチタンで画素電極２１を
形成する。Next, as shown in FIG. 2 (11), after forming an extraction electrode 18 using, for example, molybdenum polycide, a BPSG insulating film 19 is deposited on the entire surface by CVD, and the surface of this insulating film 19 is smoothed. do. Subsequently, a second contact hole 20 is formed in the insulating film 19 so that a part of the extraction electrode 18 is exposed, and a pixel electrode 21 is formed of, for example, titanium.
ここまでの工程で、固体撮像索子チップが形成されるこ
とになる。Through the steps up to this point, a solid-state imaging probe chip is formed.
次いで、第２図（ｅ）に示す如く、固体撮像素子チップ
上に、水素処理されたアモルファスシリコン光導電膜２
２とＩＴＯ透明電極２３を周知の方法により堆積する。Next, as shown in FIG. 2(e), a hydrogen-treated amorphous silicon photoconductive film 2 is placed on the solid-state image sensor chip.
2 and an ITO transparent electrode 23 are deposited by a well-known method.
さらに、透明電極２３上に反射防止膜２４としての酸化
クロム膜と光シールド層２５としてのクロム層をスパッ
タ法を用いて堆積する。Furthermore, a chromium oxide film as an anti-reflection film 24 and a chromium layer as a light shield layer 25 are deposited on the transparent electrode 23 using a sputtering method.
次いで、第２図（ｄ）に示す如く、光シールド層２５上
にレジストパターン２６を所望パターンに形成する。そ
して、レジストパターン２６をマスクに光シールド層２
５及び反射防止膜２４を選択エツチングし、レジストパ
ターン２６を除去することにより、前記第１図に示す如
き積層型固体撮像装置が完成する。Next, as shown in FIG. 2(d), a resist pattern 26 is formed in a desired pattern on the optical shield layer 25. Then, using the resist pattern 26 as a mask, the light shield layer 2 is
By selectively etching 5 and the antireflection film 24 and removing the resist pattern 26, a stacked solid-state imaging device as shown in FIG. 1 is completed.
かくして製造された本装置は、先シールド層２５と透明
電極２３との間に反射率の小さい酸化クロム等の反射防
止膜２４が形成されているので、入射光が画素電極２１
で反射され光シールド層２５側に進んでも、反射防止膜
２４の存在により光シールド層２５側での反射は少ない
ものとなる。In this device manufactured in this manner, an antireflection film 24 made of chromium oxide or the like having a low reflectance is formed between the front shield layer 25 and the transparent electrode 23, so that incident light is directed to the pixel electrode 21.
Even if the light is reflected by the light shield layer 25 and propagates toward the light shield layer 25, the reflection on the light shield layer 25 side is reduced due to the presence of the antireflection film 24.
このため、光シールド層２５と画素電極２１との間で起
こる多重反射による光の漏れ込みを大幅に低減すること
ができ、スミアの発生を著しく低減することができる。Therefore, the leakage of light due to multiple reflections occurring between the light shield layer 25 and the pixel electrode 21 can be significantly reduced, and the occurrence of smear can be significantly reduced.
また、従来構成に加え反射防止膜２４を設けるのみの簡
易な構成で実現し得る等の利点もある。Further, there is an advantage that it can be realized with a simple structure that only requires the provision of the antireflection film 24 in addition to the conventional structure.
なお、本発明は上述した実施例に限定されるものではな
い。例えば、前記光導電膜としてはアモルファスシリコ
ンに限るものではなく、Ｓｅ−＾５−Ｔｅ。Note that the present invention is not limited to the embodiments described above. For example, the photoconductive film is not limited to amorphous silicon, but may also be Se-^5-Te.
Ｚｎ５ｅ−ＺｎＣｄＴｅ等で代表される光導電膜を用い
ることができる。また、光シールド層としてはクロムの
代わりに、モリブデン、タングステン、チタン等の金属
材料や、モリブデン・シリサイド、チタン・シリサイド
等の金属珪化物等、光に対して透過率の小さいものであ
ればよい。さらに、反射防止膜としては酸化クロムの代
わりに、酸化チタン。A photoconductive film typified by Zn5e-ZnCdTe or the like can be used. In addition, instead of chromium, the light shield layer may be made of metal materials such as molybdenum, tungsten, titanium, etc., or metal silicides such as molybdenum silicide, titanium silicide, etc., as long as they have low transmittance to light. . Furthermore, the anti-reflection coating uses titanium oxide instead of chromium oxide.
酸化モリブデン等の光に対して反射率の小さいものであ
ればよい。また、実施例では反射防止膜を単層としたが
、２種以上の材料の多層膜で反射防止膜を形成してもよ
い。また、実施例ではオプティカルブラック部の光シー
ルドと、スミア低減のために形成する光シールドの光漏
れ込みの低減について述べたが、これらのシールドの一
方しか用いない装置にも本発明を適用できるのは勿論で
ある。その他、本発明の要旨を逸脱しない範囲で、種々
変形して実施することができる。Any material having a low reflectance to light, such as molybdenum oxide, may be used. Furthermore, although the antireflection film is a single layer in the embodiments, the antireflection film may be formed of a multilayer film of two or more materials. Furthermore, in the embodiment, the reduction of light leakage of the light shield of the optical black part and the light shield formed to reduce smear was described, but the present invention can also be applied to a device that uses only one of these shields. Of course. In addition, various modifications can be made without departing from the gist of the present invention.
［発明の効果］
以上詳述したように本発明によれば、透明電極と光シー
ルド層との間に反射率の小さい材料からなる反射防止膜
を設け、光シールド層側における反射を小さくしている
ので、光シールド層と画素電極との間の多重反射に起因
する光漏れを低減することができ、スミアのより一層の
低減をはかり得る固体撮像装置を実現することができる
。[Effects of the Invention] As detailed above, according to the present invention, an anti-reflection film made of a material with low reflectance is provided between the transparent electrode and the light shield layer to reduce reflection on the light shield layer side. Therefore, it is possible to reduce light leakage caused by multiple reflections between the light shield layer and the pixel electrode, and it is possible to realize a solid-state imaging device that can further reduce smear.
第１図は本発明の一実施例に係わる光導電膜積層型固体
撮像装置の概略構成を示す断面図、第２図は同実施例装
置の製造工程を示す断面図、第３図は従来装置の概略構
成を示す断面図である。
１０・・・ｐ型シリコン基板、１１・・・ロー型層（垂
直ＣＣＤ １１ ） 、１２ ・−ｎ＋型層（蓄積ダイ
オード） １３・・・ｐ４型層（チャネルストッパ）
１４．１５・・・ポリＳｉ電極（転送用ゲート）、１８
・・・引出し電極、２１・・・画素電極、２２・・・ア
モルファスシリコン膜（先導？１ＳＩＩ％）、２３・・
・ＩＴＯ電極（透明電極） ２４・・・酸化クロム膜（
反射防止膜） ２５・・・クロム膜（光シールド層）。
出願人代理人 弁理士 鈴江武彦
（Ｃ）
（ｄ）
第２図FIG. 1 is a cross-sectional view showing the schematic structure of a photoconductive film stacked solid-state imaging device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view showing the manufacturing process of the same embodiment, and FIG. 3 is a conventional device. FIG. 10...p type silicon substrate, 11...low type layer (vertical CCD 11), 12...-n+ type layer (storage diode) 13...p4 type layer (channel stopper)
14.15...Poly-Si electrode (transfer gate), 18
...Extraction electrode, 21...Pixel electrode, 22...Amorphous silicon film (leading? 1SII%), 23...
・ITO electrode (transparent electrode) 24...Chromium oxide film (
Anti-reflection film) 25...Chromium film (light shield layer). Applicant's agent Patent attorney Takehiko Suzue (C) (d) Figure 2
Claims (2)
荷転送部が形成され、且つ最上部に信号電荷蓄積ダイオ
ードに電気的に接続された画素電極が形成された固体撮
像素子チップと、この固体撮像素子チップ上に積層され
た光導電膜と、この光導電膜上に形成された透明電極と
、この透明電極上に前記画素電極の間隙を覆うように形
成された光シールド層とを備えた固体撮像装置において
、前記光シールド層と透明電極との間に、光シールド層
よりも光に対する反射率の小さな材料からなる反射防止
膜を設けたことを特徴とする固体撮像装置。(1) A solid-state image sensor chip in which a signal charge storage diode and a signal charge transfer section are formed on a semiconductor substrate, and a pixel electrode electrically connected to the signal charge storage diode is formed on the top, and this solid-state image sensor A solid-state imaging device comprising a photoconductive film laminated on a chip, a transparent electrode formed on the photoconductive film, and a light shield layer formed on the transparent electrode so as to cover the gap between the pixel electrodes. A solid-state imaging device, characterized in that an anti-reflection film made of a material having a lower reflectance to light than the light shield layer is provided between the light shield layer and the transparent electrode.
酸化モリブデンからなるものであることを特徴とする請
求項１記載の固体撮像装置。(2) The solid-state imaging device according to claim 1, wherein the antireflection film is made of chromium oxide, titanium oxide, or molybdenum oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63245990A JPH0294566A (en) | 1988-09-30 | 1988-09-30 | Solid-state image sensing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63245990A JPH0294566A (en) | 1988-09-30 | 1988-09-30 | Solid-state image sensing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0294566A true JPH0294566A (en) | 1990-04-05 |
Family
ID=17141828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63245990A Pending JPH0294566A (en) | 1988-09-30 | 1988-09-30 | Solid-state image sensing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0294566A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7034333B1 (en) | 1999-06-17 | 2006-04-25 | Lutz Fink | Semiconductor sensor, comprising a pixel structure and the use of said sensor in a vacuum system |
| US7172922B2 (en) * | 2002-08-19 | 2007-02-06 | Tower Semiconductor Ltd. | CMOS image sensor array with black pixel using negative-tone resist support layer |
| WO2007019073A2 (en) * | 2005-08-03 | 2007-02-15 | Micron Technology, Inc. | Backside silicon wafer design reducing image artifacts from infrared radiation |
| FR2893765A1 (en) * | 2005-11-21 | 2007-05-25 | St Microelectronics Sa | Photosensible integrated circuit, e.g. electronic chip, production, for e.g. webcam, involves forming reflective layer between transistors and integrated circuit, where layer reflects photons not absorbed by silicon layers |
| JP2008153361A (en) * | 2006-12-15 | 2008-07-03 | Hitachi Ltd | Solid-state imaging device, and light detector and authentication equipment using the same |
| JP2009117802A (en) * | 2007-09-07 | 2009-05-28 | Dongbu Hitek Co Ltd | Image sensor, and manufacturing method thereof |
| WO2011115283A1 (en) * | 2010-03-19 | 2011-09-22 | Fujifilm Corporation | Photoelectric conversion layer stack-type solid-state imaging device and imaging apparatus |
| JP2014165499A (en) * | 2013-02-22 | 2014-09-08 | Samsung Electronics Co Ltd | Photoelectric element and organic image sensor |
| US11253666B2 (en) | 2016-07-22 | 2022-02-22 | Nihon Kohden America, Inc. | Masks, systems, and methods for assisting respiration including scattering chamber |
-
1988
- 1988-09-30 JP JP63245990A patent/JPH0294566A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7034333B1 (en) | 1999-06-17 | 2006-04-25 | Lutz Fink | Semiconductor sensor, comprising a pixel structure and the use of said sensor in a vacuum system |
| US7172922B2 (en) * | 2002-08-19 | 2007-02-06 | Tower Semiconductor Ltd. | CMOS image sensor array with black pixel using negative-tone resist support layer |
| US7576361B2 (en) | 2005-08-03 | 2009-08-18 | Aptina Imaging Corporation | Backside silicon wafer design reducing image artifacts from infrared radiation |
| WO2007019073A2 (en) * | 2005-08-03 | 2007-02-15 | Micron Technology, Inc. | Backside silicon wafer design reducing image artifacts from infrared radiation |
| WO2007019073A3 (en) * | 2005-08-03 | 2008-01-03 | Micron Technology Inc | Backside silicon wafer design reducing image artifacts from infrared radiation |
| US8044443B2 (en) | 2005-11-21 | 2011-10-25 | Stmicroelectronics S.A. | Photosensitive integrated circuit equipped with a reflective layer and corresponding method of production |
| FR2893765A1 (en) * | 2005-11-21 | 2007-05-25 | St Microelectronics Sa | Photosensible integrated circuit, e.g. electronic chip, production, for e.g. webcam, involves forming reflective layer between transistors and integrated circuit, where layer reflects photons not absorbed by silicon layers |
| US8610048B2 (en) | 2005-11-21 | 2013-12-17 | Stmicroelectronics S.A. | Photosensitive integrated circuit equipped with a reflective layer and corresponding method of production |
| JP2008153361A (en) * | 2006-12-15 | 2008-07-03 | Hitachi Ltd | Solid-state imaging device, and light detector and authentication equipment using the same |
| JP2009117802A (en) * | 2007-09-07 | 2009-05-28 | Dongbu Hitek Co Ltd | Image sensor, and manufacturing method thereof |
| WO2011115283A1 (en) * | 2010-03-19 | 2011-09-22 | Fujifilm Corporation | Photoelectric conversion layer stack-type solid-state imaging device and imaging apparatus |
| JP2011243945A (en) * | 2010-03-19 | 2011-12-01 | Fujifilm Corp | Photoelectric conversion layer laminate type solid-state imaging element and imaging device |
| JP2014165499A (en) * | 2013-02-22 | 2014-09-08 | Samsung Electronics Co Ltd | Photoelectric element and organic image sensor |
| US10707432B2 (en) | 2013-02-22 | 2020-07-07 | Samsung Electronics Co., Ltd. | Photoelectronic device and image sensor |
| US11253666B2 (en) | 2016-07-22 | 2022-02-22 | Nihon Kohden America, Inc. | Masks, systems, and methods for assisting respiration including scattering chamber |
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