JPH0287929A - Protective device for high frequency power source - Google Patents
Protective device for high frequency power sourceInfo
- Publication number
- JPH0287929A JPH0287929A JP63236447A JP23644788A JPH0287929A JP H0287929 A JPH0287929 A JP H0287929A JP 63236447 A JP63236447 A JP 63236447A JP 23644788 A JP23644788 A JP 23644788A JP H0287929 A JPH0287929 A JP H0287929A
- Authority
- JP
- Japan
- Prior art keywords
- high frequency
- reflected wave
- signal
- current
- logic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 title abstract description 3
- 230000005856 abnormality Effects 0.000 claims abstract description 21
- 238000001514 detection method Methods 0.000 claims description 12
- 230000006378 damage Effects 0.000 abstract description 3
- 230000002159 abnormal effect Effects 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Emergency Protection Circuit Devices (AREA)
- Control Of High-Frequency Heating Circuits (AREA)
- Protection Of Static Devices (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、高周波電源保護装置に関するものである。[Detailed description of the invention] [Industrial application field] The present invention relates to a high frequency power supply protection device.
従来の装置としては、例えば、岩田者、「高周波回路の
トラブル対策Ｊ、ＣＱ出版（株）発行、第９版（昭和５
８年１１月１日）の第２４６頁に記載のようなものが知
られている。Conventional devices include, for example, Takata Iwata, "Trouble Countermeasures for High Frequency Circuits J," published by CQ Publishing Co., Ltd., 9th edition (1932).
The one described on page 246 of ``November 1, 1998'' is known.
このような！ｉ１［では、反射波電力の大きさを検出し
ていたため、整合が′とれた状態から負荷インピーダン
スが変化したときに反射波が大き炙なり、反射波異常を
検出して高周波出力が停止される二とがあった。like this! In i1 [, the magnitude of the reflected wave power was detected, so when the load impedance changed from the state where matching was achieved, the reflected wave became large and the reflected wave abnormality was detected and the high frequency output was stopped. There was a second one.
高周波電源において、反射波が大きくなる原因は高周波
１！諒出力インピーダンスと負荷インピーダンスの不整
台がある。不整合時の例として、負荷９Ｅｌ格と負荷開
放があるが、負荷開放による反射波増大時は高周波［＃
の損傷を招くことは少ない。In high frequency power supplies, the reason why reflected waves become large is high frequency 1! There is an uneven output impedance and load impedance. As an example of mismatching, there is a load 9El rating and a load release, but when the reflected wave increases due to the load release, high frequency [#
It is unlikely to cause damage.
上記従来技術は、反射波電力のみを検出しているため、
負荷開放又は負荷インピーダンス２が高い場合において
も高周波出力を停止するため、高周波電源を用いた装置
のシーケンスを途中で停止してしまうといりた不都合を
生じる。Since the above conventional technology detects only the reflected wave power,
Since the high frequency output is stopped even when the load is released or the load impedance 2 is high, there is a problem that the sequence of the device using the high frequency power source is stopped midway.
本発明の目的は、負荷開放又は負荷インピーダンスが高
い場合は反射波電力が大きくても、一定の高周波電力を
継続して出力し、反射波電力が大きい場合でも高周波電
源を用いた装置のシーケンスを継続できる高周波ｔ＃保
護装置を提供することにある。The purpose of the present invention is to continuously output a constant high frequency power even if the reflected wave power is large when the load is open or the load impedance is high, and to control the sequence of equipment using a high frequency power supply even when the reflected wave power is large. The object of the present invention is to provide a high frequency t# protection device that can be used continuously.
上記目的は、高周波出力時における進行波電力検出手段
と反射波電力検出手段を有する高周波電源に高周波出力
電流検出手段を設けたものとすることにより、達成され
る。The above object is achieved by providing a high frequency output current detecting means in a high frequency power supply having a traveling wave power detecting means and a reflected wave power detecting means at the time of high frequency output.
不整合時、高周波電力伝送路に定在波が生じ、負荷短絡
時においては、高周波出力の波長を入とすると、負荷端
から土・ｍ・入（ｍは奇数）の位置では高周波電流実効
値がＯとなる。従って、餌記位置をさけ、負荷端から高
周波検出手段までの距離が上・ｍ・人士上人となるよう
に高周波検出手段を設ける。また、伝送路として使用す
る部品によりでは、訂記距離に波長短縮率を乗する必要
がある。When there is a mismatch, a standing wave is generated in the high-frequency power transmission line, and when the load is short-circuited, when the wavelength of the high-frequency output is taken as the input, the effective value of the high-frequency current is becomes O. Therefore, avoid the bait position and install the high frequency detection means so that the distance from the load end to the high frequency detection means is 1 m. Furthermore, depending on the parts used as the transmission line, it is necessary to multiply the recording distance by the wavelength shortening rate.
高周波出力時、不整合が生じた場合、反射波電力が太き
（なる。このときの高周波電流を調べ、高周波ｍ１１１
ｉを想傷する可能性のある高周波電流であれば即時に高
周波出力を停止し、高周波電流が小さければ一定時間待
って高周波出力を停止する。When a mismatch occurs during high frequency output, the reflected wave power becomes thick (becomes thick). Check the high frequency current at this time, and
If the high frequency current is likely to cause injury to i, the high frequency output is immediately stopped, and if the high frequency current is small, the high frequency output is stopped after a certain period of time.
これにより負荷インピーダンスの高い場合における高周
波電力の継続出力を行うことができる。This allows continuous output of high frequency power even when the load impedance is high.
以下、本発明の一実施例として高周波電源を用いたドラ
イエツチング装置に適用した場合を挙げ、夷１図により
説明する。Hereinafter, as an embodiment of the present invention, a case where the present invention is applied to a dry etching apparatus using a high frequency power source will be described with reference to FIG.
第１図で、ドライエツチング装置はプラズマ晃生容Ｂ２
１内の試料台ス上にウニハラを投置し、プラズマ発生容
器ｎ内を真空にし、エザテング用のガスを流し、高周波
電力を供給してプラズマｎを発生してエツチングを行う
装置である。試料台スへの高周波電力の供給は高周波電
＃１から自動整合装置Ｘを介して行われる。In Figure 1, the dry etching device is a plasma etchant B2.
In this device, a sea urchin is placed on a sample stage in a plasma generating container n, the inside of the plasma generating container n is evacuated, gas for etching is supplied, and high frequency power is supplied to generate plasma n to perform etching. High frequency power is supplied to the sample stage from high frequency power #1 via automatic matching device X.
高周波電源ｌは、発振器２．アンプ３２反射波電力検出
器４．高周波電流検出器５．保護装置田から成る。保護
５Ｉｔ置田は、反射波信号１３と、反射波異常値設定器
７で設定された反射波設定値δを人力とし、反射波信号
１３〉反射波設定値５のとき論理１．その他のときＯと
なる反射波状態信号巧を出力する反射波比較器６．高周
波電流信号１４と電流異常値設定器９で設定された電流
設定値々を入力とし、高周波電流信号１４＞電流設定値
謳のとき論理ｌ、その他のとき０となる電流状態信号１
６を出力する電流比較器８１反射波が太き（（反射波状
態信号１５＝１）かつ高周波ＩＥ流が大きい（を流状態
信号１６＝１）のとき論理１．その他のとき０となる反
射波・電流異常信号１８を出力するＡＮＤ＠絡１０．反
射波状態信号１５が一定時間ｌとなったとき論理ｌ、そ
の他のとき０となる反射波異常信号１７を出力する時限
回ｊｌｉ％１１．反射波・電流異常信号１８および反射
波異常信号のどれか一つでも論理１であれば論理１．い
ずれもＯのとき論理Ｏとなる異常信号四を出力するＯＲ
回路鵞から成る。The high frequency power source l is connected to an oscillator 2. Amplifier 32 Reflected wave power detector 4. High frequency current detector5. It consists of a protective device field. Protection 5It Okida uses the reflected wave signal 13 and the reflected wave setting value δ set by the reflected wave abnormal value setting device 7 manually, and when the reflected wave signal 13>reflected wave setting value 5, logic 1. 6. A reflected wave comparator that outputs a reflected wave state signal which becomes O in other cases. The high frequency current signal 14 and the current setting values set by the current abnormal value setter 9 are input, and the current state signal 1 becomes logic 1 when the high frequency current signal 14>current setting value, and becomes 0 otherwise.
Current comparator 81 outputs 6. When the reflected wave is thick ((reflected wave status signal 15 = 1) and the high frequency IE flow is large (flow status signal 16 = 1), the logic is 1. Otherwise, the reflection is 0. AND@circuit 10 which outputs the wave/current abnormality signal 18. Time limit jli% 11. which outputs the reflected wave abnormality signal 17 which becomes logic 1 when the reflected wave status signal 15 becomes 1 for a certain period of time and becomes 0 otherwise. If any one of the reflected wave/current abnormality signal 18 and the reflected wave abnormality signal is logic 1, the logic is 1. If both are O, the OR outputs the abnormal signal 4 which becomes logic O.
It consists of a circuit.
発振器２は、異常信号１９がＯ→１に変化することを検
出した場合、発振を停止して高周波出力を停止する機能
を有する。The oscillator 2 has a function of stopping oscillation and high frequency output when detecting that the abnormal signal 19 changes from O to 1.
反射波電力が小さい場合、反射波異常信号１７゜反射波
・電流異常信号のいずれも論理０となり異常信号１９は
論理Ｏを保持している。よって高周波出力を継続する。When the reflected wave power is small, both the reflected wave abnormality signal 17°, the reflected wave, and the current abnormality signal become logic 0, and the abnormality signal 19 maintains logic O. Therefore, high frequency output continues.
反射波電力が大きくなり反射波信号１３＞反射波設定信
号δとなると反射波状態信号巧が論理ｌとなる。このと
き、高周波電流信号１４〉電流設定信号部であれば反射
波・電流異常信号１８が論理ｌとなり、これにより異常
信Ｊｊｄｊ１９が論理１となって高周波出力を即時停止
する。また、高周波電流信号１４≦１１Ｌ流設定信号々
であれば、反射波・ＩＥｔＩｔ異常信号１８は論理０と
なり高周波出力の即時停止は行わない。但し、反射波状
態信号１５が一定時間論理１を継続すると反射波異常信
号１７が論理１となり、これにより異常信号１９が論理
ｌとなって高周波出力を停止する。When the reflected wave power increases and the reflected wave signal 13>reflected wave setting signal δ, the reflected wave state signal becomes logic l. At this time, if the high frequency current signal 14>current setting signal section, the reflected wave/current abnormality signal 18 becomes logic 1, and thereby the abnormality signal Jjdj 19 becomes logic 1, and the high frequency output is immediately stopped. Further, if the high frequency current signal 14≦11L flow setting signals, the reflected wave/IEtIt abnormality signal 18 becomes logic 0, and the high frequency output is not immediately stopped. However, when the reflected wave state signal 15 continues to be logic 1 for a certain period of time, the reflected wave abnormal signal 17 becomes logic 1, and thereby the abnormal signal 19 becomes logic 1, and the high frequency output is stopped.
ドライエツチング装置においては高周波電力印加直後の
プラズマを発生する際、および、プロセス条件を急激に
変化させるときなど負荷インピーダンスが急激に変化し
反射波が大きくなる。本実施例によれば、負荷インピー
ダンスが大きくなることにより反射波が大きくな、たと
きは、継続して高周波電力をプラズマに供給することが
できるので、プラズマ発生時の反射異常検出によるシー
ケンス停止を防ぎ、プロセス条件変更による負荷インピ
ーダンス急変時でも継続して高周波電力を供給でき、プ
ラズマを消滅することなしにエツチングを行うことがで
き装置稼動率を向上させることができる。In a dry etching apparatus, the load impedance changes rapidly, such as when generating plasma immediately after applying high-frequency power, or when changing process conditions rapidly, and the reflected waves become large. According to this embodiment, when the reflected wave becomes large due to an increase in load impedance, high frequency power can be continuously supplied to the plasma, so it is possible to stop the sequence due to reflection abnormality detection at the time of plasma generation. This makes it possible to continuously supply high-frequency power even when the load impedance suddenly changes due to a change in process conditions, and to perform etching without extinguishing the plasma, thereby improving the operating rate of the apparatus.
本発明によれば、負荷インピーダンスの高い場合では反
射波電力が大きくても一定の高周波電力を継続して出力
できるので、高周波電源を用いた装置のシーケンスを継
続できる効果がある。According to the present invention, when the load impedance is high, a constant high frequency power can be continuously output even if the reflected wave power is large, so that the sequence of the device using the high frequency power source can be continued.
第１図は、本発明の一実施例のドライエツチング装置に
おける高周波電力給電図である。
■・・・・・・高周波電源、２・・・・・・発振器、３
・・・・・・アンプ、４・・・・・・反射波電力検出器
、５・・・・・・高周波１１Ｌｒ！Ｌ検出器
代理人 弁理士 小 川 勝 男
−＼FIG. 1 is a high frequency power supply diagram in a dry etching apparatus according to an embodiment of the present invention. ■・・・High frequency power supply, 2...Oscillator, 3
......Amplifier, 4...Reflected wave power detector, 5...High frequency 11Lr! L Detector Representative Patent Attorney Katsuo Ogawa-＼
Claims (1)
力検出手段を有する該高周波電源に、高周波出力電流検
出手段を設けたことを特徴とする高周波電源保護装置。 ２、高周波電力出力時、前記反射波電力検出手段により
検出した反射波電力があらかじめ定められた反射波異常
検出値を超え、かつ、前記高周波出力電流検出手段によ
り検出した高周波電流があらかじめ定められた高周波電
流異常検出値を超えたとき、高周波出力を停止する第１
請求項に記載の高周波電源保護装置。 ３、高周波電力出力時、反射波電力が前記反射波異常検
出値を超え、かつ、高周波電流が前記高周波電流異常検
出値を超えていない場合、あらかじめ定められた一定時
間この状態が持続したときに高周波出力を停止する時限
回路を設けた第１請求項に記載の高周波電源保護装置。[Scope of Claims] 1. A high-frequency power supply protection device, characterized in that the high-frequency power supply has a forward power detection means and a reflected wave power detection means at the time of high-frequency output, and is provided with a high-frequency output current detection means. 2. When high frequency power is output, the reflected wave power detected by the reflected wave power detection means exceeds a predetermined reflected wave abnormality detection value, and the high frequency current detected by the high frequency output current detection means is predetermined. The first part that stops high frequency output when the high frequency current abnormality detection value is exceeded.
A high frequency power protection device according to the claims. 3. When outputting high-frequency power, if the reflected wave power exceeds the reflected wave abnormality detection value and the high-frequency current does not exceed the high-frequency current abnormality detection value, when this state continues for a predetermined period of time. The high frequency power supply protection device according to claim 1, further comprising a time limit circuit for stopping high frequency output.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63236447A JPH0287929A (en) | 1988-09-22 | 1988-09-22 | Protective device for high frequency power source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63236447A JPH0287929A (en) | 1988-09-22 | 1988-09-22 | Protective device for high frequency power source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0287929A true JPH0287929A (en) | 1990-03-28 |
Family
ID=17000884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63236447A Pending JPH0287929A (en) | 1988-09-22 | 1988-09-22 | Protective device for high frequency power source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0287929A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040002258A (en) * | 2002-06-29 | 2004-01-07 | 현대자동차주식회사 | Intercooler performance elevation device |
| KR20040040785A (en) * | 2002-11-08 | 2004-05-13 | 현대자동차주식회사 | Cooling-device of intercooler using condenstating water |
| WO2020050356A1 (en) | 2018-09-07 | 2020-03-12 | パナソニックＩｐマネジメント株式会社 | Rf energy radiation device |
-
1988
- 1988-09-22 JP JP63236447A patent/JPH0287929A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040002258A (en) * | 2002-06-29 | 2004-01-07 | 현대자동차주식회사 | Intercooler performance elevation device |
| KR20040040785A (en) * | 2002-11-08 | 2004-05-13 | 현대자동차주식회사 | Cooling-device of intercooler using condenstating water |
| WO2020050356A1 (en) | 2018-09-07 | 2020-03-12 | パナソニックＩｐマネジメント株式会社 | Rf energy radiation device |
| EP4243572A2 (en) | 2018-09-07 | 2023-09-13 | Panasonic Intellectual Property Management Co., Ltd. | Rf energy radiation device |
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