JPH028253B2 - - Google Patents
Info
- Publication number
- JPH028253B2 JPH028253B2 JP57152610A JP15261082A JPH028253B2 JP H028253 B2 JPH028253 B2 JP H028253B2 JP 57152610 A JP57152610 A JP 57152610A JP 15261082 A JP15261082 A JP 15261082A JP H028253 B2 JPH028253 B2 JP H028253B2
- Authority
- JP
- Japan
- Prior art keywords
- strain
- thin
- diaphragm
- pressure
- strain beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 238000005259 measurement Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0007—Fluidic connecting means
- G01L19/0038—Fluidic connecting means being part of the housing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
- G01L19/0084—Electrical connection means to the outside of the housing
Description
【発明の詳細な説明】
本発明は圧力、差圧検出器に係り、特に半導体
自体をダイヤフラムとする半導体圧力検出器に関
する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to pressure and differential pressure detectors, and particularly to a semiconductor pressure detector whose diaphragm is a semiconductor itself.
従来のSiダイヤフラム形圧力、差圧検出器に用
いられる測定ダイヤフラムはSi単結晶よりなり中
央に第１の肉厚部、それを囲む肉薄部、さらに前
記肉薄部を囲む第２の肉厚部を有し、前記肉薄部
の一主面側に複数のゲージ抵抗が通常のICプロ
セスにより形成されている。このSiダイヤフラム
の第２の肉厚部の裏面は、ダイヤフラムと熱膨張
係数の類似した中央に通気孔のあるシリコンやガ
ラスよりなる第１の支持体に接合され、この支持
体は受圧室を形成するハウジングに通気孔のある
第２の支持体を介し結合されている。このSiダイ
ヤフラム形圧力、差圧検出器はIC技術を応用で
きるので量産性に優れ、かつSi単結晶が理想的な
弾性材料であるためヒステリシスがなく再現性に
優れている特長がある。 The measuring diaphragm used in conventional Si diaphragm type pressure and differential pressure detectors is made of Si single crystal and has a first thick part in the center, a thin part surrounding it, and a second thick part surrounding the thin part. A plurality of gauge resistors are formed on one main surface side of the thin portion by a normal IC process. The back side of the second thick part of this Si diaphragm is joined to a first support made of silicon or glass that has a vent hole in the center and has a similar thermal expansion coefficient as the diaphragm, and this support forms a pressure receiving chamber. The housing is connected to the housing through a second support having ventilation holes. This Si diaphragm type pressure/differential pressure detector can be applied with IC technology, making it highly suitable for mass production, and since Si single crystal is an ideal elastic material, it has no hysteresis and has excellent reproducibility.
しかしながら、かかる構成の測定ダイヤフラム
にあつては、極めて低い圧力の測定をおこなう場
合、圧力と出力との直線性が悪くなる欠点があ
る。この原因は、低圧領域の測定のためには、測
定ダイヤフラムの起歪部の肉厚より薄くする必要
があるため、薄肉化すればするほど起歪部のたわ
みが大きくなり、測定ダイヤフラムが伸びるバル
ーン効果が生じるためである。 However, a measurement diaphragm having such a configuration has the disadvantage that the linearity between pressure and output becomes poor when measuring extremely low pressures. The reason for this is that in order to measure low-pressure areas, the measurement diaphragm needs to be thinner than the strain-generating part, so the thinner the wall, the greater the deflection of the strain-generating part, which causes the measurement diaphragm to stretch. This is because it produces an effect.
本発明の目的は、上記した従来技術の欠点をな
くし、低圧測定値でも圧力と出力との直線関係が
優れた半導体出力、差圧センサを提供するにあ
る。 SUMMARY OF THE INVENTION An object of the present invention is to eliminate the drawbacks of the prior art described above and to provide a semiconductor output differential pressure sensor that has an excellent linear relationship between pressure and output even at low pressure measurements.
上記目的を達成するため、本発明は、内側およ
び外側に肉厚部、前記各肉厚部の間に圧力をとめ
るために充分な薄さの薄肉部が形成されたSiダイ
ヤフラムと前記薄肉部の変位にともなつてその変
位を規制しながら変位するSi起歪はりと、このSi
起歪はり上に形成されたゲージ抵抗とを有し、前
記Si起歪はりは、前記ゲージ抵抗が形成されてい
る領域に応力を集中させるため他の領域に剛性を
もたせて構成されているものである。 In order to achieve the above object, the present invention provides an Si diaphragm having thick wall portions on the inside and outside, and a thin wall portion that is sufficiently thin to stop pressure between the thick wall portions, and The Si strain beam displaces while regulating its displacement as it is displaced, and this Si
and a gauge resistor formed on a strain beam, and the Si strain beam is configured to have rigidity in other regions in order to concentrate stress in the region where the gauge resistor is formed. It is.
以下、本発明の一実施例を図面に基づいて説明
する。 Hereinafter, one embodiment of the present invention will be described based on the drawings.
第１図は本発明による半導体出力検出器の一実
施例を示す断面図である。単結晶Siからなる測定
ダイヤフラム１０は中空の第１の支持部材１２、
中空の第２の支持部材１４を介してハウジング１
６に取付けられている。第１の支持部材１２は測
定ダイヤフラム１０のハウジング１６からの電気
的絶縁およびハウジング１６からの熱膨張係数の
違いによる熱歪を考慮し、Siと熱膨張係数の近似
したたとえば硼珪酸ガラスが使用されている。 FIG. 1 is a sectional view showing an embodiment of a semiconductor output detector according to the present invention. The measuring diaphragm 10 made of single crystal Si includes a hollow first support member 12,
Housing 1 via hollow second support member 14
It is attached to 6. The first support member 12 is made of, for example, borosilicate glass, which has a thermal expansion coefficient similar to that of Si, in consideration of electrical insulation of the measuring diaphragm 10 from the housing 16 and thermal distortion due to differences in thermal expansion coefficient from the housing 16. ing.
また、第２の支持部材１４は、熱膨張係数およ
びハウジング１６への溶接による取付けを考慮
し、Siと熱膨張係数の近似したたとえばFe−Ni
合金あるいはFe−Ni−Co合金が使用されてい
る。これらの測定ダイヤフラムと第１の支持部材
１２、又び第１の支持部材１２と第２の支持部材
１４間はたとえば陽極給合法で接合されている。 In addition, the second support member 14 is made of a material having a thermal expansion coefficient similar to that of Si, such as Fe-Ni, in consideration of the thermal expansion coefficient and attachment by welding to the housing 16.
alloy or Fe-Ni-Co alloy is used. These measuring diaphragms and the first support member 12, and between the first support member 12 and the second support member 14 are joined by, for example, an anode feeding method.
測定ダイヤフラム１０からの電気的出力は、リ
ード線１８及びハウジング１６にハーメチツクシ
ールされた端子２０を介して外部に取出されてい
る。 The electrical output from the measuring diaphragm 10 is taken out via a lead 18 and a terminal 20 hermetically sealed to the housing 16.
第２図は測定ダイヤフラム１０をゲージ抵抗面
側から見た図、第３図は第２図の−線におけ
る断面図、第４図はゲージ抵抗を持つ起歪はりを
示す一部拡大図である。 Fig. 2 is a view of the measurement diaphragm 10 seen from the gauge resistance side, Fig. 3 is a sectional view taken along the - line in Fig. 2, and Fig. 4 is a partially enlarged view showing a strain beam with a gage resistance. .
測定ダイヤフラム１０は、その主表面が１１０
の円形状ｎ形単結晶Siで、中央に厚肉の剛体部３
０、外周に厚肉の固定部３２を有し、その間に環
状の薄肉の起歪部３４が形成されている。この起
歪部３０は圧力をとめるに充分な薄さを有するも
のである。この環状の起歪部３４の一部の面上
に、この起歪部３４を股がる起歪はり３６が設け
られている。すなわち前記起歪はり３６は剛体部
３０固定部３２にそれぞれ端部が接続されている
とともに前記起歪部３４の一部の面上に沿つて形
成されている。前記起歪はり３６は、前記起歪部
３０と一体に形成され、起歪部３０に比べてその
厚さが若干厚く形成されたものである。起歪はり
３６は、＜110＞面における最大感度を示す＜111
＞軸に平行に設けられている。またこの起歪はり
の幅は中央部で広く、両端部で狭くなつており、
ｐ形ゲージ抵抗３８が、この幅狭領域３９、すな
わち外周の固定部近傍に２個、中心の剛性部近傍
に２個、＜111＞軸に平行に拡散法やイオンインプ
ランテーシヨン法により形成されている。これら
の抵抗はホイーストンブリツジに組まれ差動的に
出力を得るようになつている。測定ダイヤフラム
１０の表面にはゲージ抵抗３８を保護する酸化膜
４０およびゲージ抵抗３８の出力を取出すアルミ
酸線４２が設けられている。 The measuring diaphragm 10 has a main surface 110
A circular n-type single crystal Si with a thick rigid body part 3 in the center.
0, it has a thick fixing part 32 on the outer periphery, and an annular thin-walled strain-generating part 34 is formed therebetween. This strain generating portion 30 is thin enough to stop pressure. A strain beam 36 is provided on a part of the surface of the annular strain portion 34 and spans the strain portion 34 . That is, the strain beams 36 have their ends connected to the fixing portions 32 of the rigid body portion 30, and are formed along a part of the surface of the strain portion 34. The strain beam 36 is formed integrally with the strain generating section 30, and is formed to be slightly thicker than the strain generating section 30. The strain beam 36 exhibits maximum sensitivity in the <110> plane.
> parallel to the axis. Also, the width of this strain beam is wide at the center and narrow at both ends.
P-type gauge resistors 38 are formed in this narrow region 39, two near the fixed part on the outer periphery and two near the rigid part at the center, parallel to the <111> axis by a diffusion method or an ion implantation method. has been done. These resistors are assembled into a Wheatstone bridge so that output can be obtained differentially. An oxide film 40 for protecting the gauge resistor 38 and an aluminum oxide wire 42 for taking out the output of the gauge resistor 38 are provided on the surface of the measuring diaphragm 10.
このように構成された半導体圧力検出器におい
て、測定ダイヤフラム１０に圧力ｐを印加する
と、起歪はり３６がたわむ。この時、薄肉の起歪
部３４は起歪はり３６に比べ薄く軟かくなつてい
るため単なる気密膜として働き、受圧面積Ｓ（ほ
ぼ中央の剛体部３０と薄肉の起歪部３４を加えた
面積）×圧力Ｐの力の大半が起歪はり３６をたわ
ます力として作用する。したがつて、起歪はり３
６は小さな力、すなわち低い圧力で大きな歪を発
生することができる。加えて、この起歪はり３６
は中心で太く、両端で狭くなつているため、中心
の剛性は高く、両端の剛性は小さい。このため圧
力を加えた時、中心部のひずみは小さく、両端で
のひずみは大きくなり、ひずみは剛性の小さな両
端部に集中する。すなわちこの構造では起歪はり
３６中、歪の発生する有効長は短くなるため、起
歪はり全体をより薄くしても圧力を加えた時の起
歪はりのたわみは小さい。そこで、この起歪はり
３６の両端の剛性の小さな部分に配置されたゲー
ジ抵抗３８は、より低い圧力に対しても直線的に
抵抗変化する。 In the semiconductor pressure detector configured in this manner, when pressure p is applied to the measurement diaphragm 10, the strain beam 36 is deflected. At this time, the thin strain-generating portion 34 is thinner and softer than the strain-generating beam 36, so it acts as a mere airtight membrane, and the pressure receiving area S (area that is the sum of the approximately central rigid portion 30 and the thin strain-generating portion 34) ) x pressure P acts as a force that deflects the strain beam 36. Therefore, the strain beam 3
6 can generate a large strain with a small force, that is, a low pressure. In addition, this strain beam 36
is thick at the center and narrow at both ends, so the rigidity at the center is high and the rigidity at both ends is low. Therefore, when pressure is applied, the strain at the center is small, the strain at both ends is large, and the strain is concentrated at both ends, which have low rigidity. That is, in this structure, the effective length in which strain occurs in the strain beam 36 is shortened, so that even if the entire strain beam is made thinner, the deflection of the strain beam when pressure is applied is small. Therefore, the gauge resistors 38 arranged at the low rigidity portions at both ends of the strain beam 36 change their resistance linearly even with lower pressure.
以上のように、本発明の圧力測定ダイヤフラム
を有する圧力、差圧検出器は従来より低い圧力ま
で精度良く測定することが可能となる。また、同
一の感度を得るためには受圧面積の小さな測定ダ
イヤフラムで充分である。 As described above, the pressure and differential pressure detector having the pressure measuring diaphragm of the present invention can accurately measure pressures lower than conventional pressures. Furthermore, in order to obtain the same sensitivity, a measuring diaphragm with a small pressure-receiving area is sufficient.
第５図は本発明による半導体圧力検出器の他の
実施例を示す図で第５図ａは平面図、第５図ｂは
第５図ａのVb−Vb線における断面図である。第
２図、第３図のものに比べ起歪はり３６とダイヤ
フラム１０をそれぞれ別のシリコン結晶で作つた
後、お互をガラス材４４で陽極接合している点が
異なる。また本例では起歪はり３６の中央部の剛
性を高めるために、起歪はりの中央部を厚くした
例を示している。 FIG. 5 is a diagram showing another embodiment of the semiconductor pressure detector according to the present invention, in which FIG. 5a is a plan view and FIG. 5b is a sectional view taken along the line V b - V b of FIG. 5 a. The difference from the ones shown in FIGS. 2 and 3 is that the strain beam 36 and the diaphragm 10 are made of different silicon crystals, and then anodic bonded to each other using a glass material 44. Further, in this example, in order to increase the rigidity of the center portion of the strain beam 36, the center portion of the strain beam 36 is thickened.
この実施例では長い製造プロセスが必要となる
ゲージ抵抗は細い起歪はりのみに形成するため、
一枚のウエハから大量に形成することができる。
このためダイヤフラム大形になつても、製造コス
トの向上は少ない利点がある。また本構造ではダ
イヤフラムの肉薄起歪部の厚さを極端に薄くしな
くても広くすることにより起歪はりに比べ較軟か
くすることができるため製造し易い利点がある。 In this example, the gauge resistor, which requires a long manufacturing process, is formed only on a thin strain beam.
It can be formed in large quantities from a single wafer.
Therefore, even if the diaphragm is made larger, there is an advantage that the manufacturing cost does not increase much. In addition, this structure has the advantage of being easier to manufacture because it can be made relatively softer than a strain-generating beam by widening the thickness of the thin strain-generating portion of the diaphragm without making it extremely thin.
本実施例での作用、効果は第１の実施例と同様
である。 The functions and effects of this embodiment are similar to those of the first embodiment.
ところで、本発明の圧力検出器の応用例として
真空計がある。この時は第１の支持体には穴を形
成しなくダイヤフラムと第１の支持体間を真空ま
たはそれに近い低圧力で封じこめることにより、
従来ピラニゲージで測定していた10-2〜10torrの
低圧領域を正確に測定できる。また、ゲージ抵抗
面側が大気圧開放の時、ダイヤフラムが破壊しな
いように、ダイヤフラム中央の剛体部が第１支持
体にあたるように設計しておくことは望ましいこ
とである。 By the way, a vacuum gauge is an application example of the pressure detector of the present invention. At this time, by sealing the space between the diaphragm and the first support with a vacuum or a low pressure close to it, without forming a hole in the first support.
It can accurately measure the low pressure region of 10 -2 to 10 torr, which was conventionally measured with a Pirani gauge. Further, it is desirable to design the diaphragm so that the rigid body part at the center touches the first support body so that the diaphragm does not break when the gauge resistance side is open to atmospheric pressure.
以上本発明は、ダイヤフラムの中央の剛体部と
外周の固定部の間に薄肉の起歪部よりも肉厚の起
歪はりを形成し、この起歪はりの少なくとも一部
を広くしたり、厚くすることにより剛性を高め、
この起歪はりの剛性の小さな部分にゲージ抵抗を
形成したことにより、ゲージ抵抗に作用させる力
を増大するとともに、かつ起歪はりの有効長を短
かくすることにより、きわめて低い圧力範囲の測
定も正確に行うことができる。 As described above, the present invention forms a strain beam that is thicker than the thin strain-generating portion between the central rigid body portion and the fixed portion on the outer periphery of the diaphragm, and makes at least a portion of the strain beam wider or thicker. This increases rigidity,
By forming a gauge resistance in a portion of the strain beam with low rigidity, the force acting on the gauge resistance is increased, and by shortening the effective length of the strain beam, measurement of extremely low pressure ranges is also possible. Can be done accurately.
本発明はこれら実施例に限られるものではな
い。例えば、起歪はりの一部の剛性を高めるため
には、その部分を厚くするか又は広くするかいず
れの方法を採用してもよい。また起歪はりには＜
100＞面のシリコンウエハを使用し、ゲージ抵抗
を＜110＞方向に配置することも可能である。 The present invention is not limited to these examples. For example, in order to increase the rigidity of a part of the strain beam, the part may be made thicker or wider. Also, for strain beams <
It is also possible to use a silicon wafer with a 100> plane and arrange the gauge resistors in the <110> direction.
その他、実施例には起歪はりの数が２本の場合
を示しているが、一本又は３本以上でも良いこと
は明らかである。またゲージ抵抗の配置法として
は、起歪はりに直交する方向に配置しても良い。
この直交ゲージ抵抗および平行ゲージ抵抗を組合
わせれば、起歪はり中一箇所の幅狭領域にブリツ
ジを組む４ケのゲージ抵抗をまとめて配置するこ
とができる。 In addition, although the embodiment shows a case where the number of strain beams is two, it is clear that one or three or more strain beams may be used. Further, the gauge resistor may be arranged in a direction perpendicular to the strain beam.
By combining the orthogonal gauge resistors and the parallel gauge resistors, four gauge resistors forming a bridge can be placed together in one narrow area in the strain beam.
以上述べたことから明らかなように、本発明に
よる半導体圧力検出器によれば、低圧測定時でも
圧力と出力との直線関係が優れたものとすること
ができる。 As is clear from the above description, the semiconductor pressure detector according to the present invention can provide an excellent linear relationship between pressure and output even when measuring low pressure.
第１図は本発明による半導体圧力検出器の一実
施例を示す断面図、第２図は本発明の一実施例の
測定ダイヤフラムの上面図、第３図は第２図の
−断面図、第４図は起歪はりおよびその周辺の
拡大図、第５図ａ，ｂは本発明の他の実施例を示
す図で、第５図ａは平面図、第５図ｂは第５図ａ
のVb−Vb線における断面図である。
１０……測定ダイヤフラム、１２……第１の支
持部材、１４……第２の支持部材、１６……ハウ
ジング、３０……剛体部、３２……固定部、３４
……肉薄起歪部、３６……起歪はり、３８……ゲ
ージ抵抗、３９……幅狭領域。
FIG. 1 is a sectional view showing an embodiment of a semiconductor pressure sensor according to the present invention, FIG. 2 is a top view of a measuring diaphragm according to an embodiment of the present invention, and FIG. Figure 4 is an enlarged view of the strain beam and its surroundings, Figures 5a and b are views showing other embodiments of the present invention, Figure 5a is a plan view, and Figure 5b is Figure 5a.
FIG . 10...Measuring diaphragm, 12...First support member, 14...Second support member, 16...Housing, 30...Rigid body part, 32...Fixing part, 34
... Thin strain-generating portion, 36 ... Strain-generating beam, 38 ... Gauge resistance, 39 ... Narrow width region.
Claims (1)
に圧力をとめるために充分な薄さの薄肉部が形成
されたSiダイヤフラムと、前記薄肉部の一部の面
上にこの薄肉部を股がり、前記薄肉部の変位にと
もなつてその変化を規制しながら変位する前記薄
肉部より大きな肉厚を有するSi起歪はりと、この
Si起歪はり面に形成されたゲージ抵抗とを有し、
前記Si起歪はりは、そのほぼ中央部に、前記Si起
歪はりの幅方向に延在する面積拡大領域および厚
さ方向に肉厚部を有する肉厚拡大領域のうちいず
れか一方の領域を有し、かつ前記ゲージ抵抗は前
記領域外に形成されていることを特徴とする半導
体圧力検出器。1. A Si diaphragm having thick parts on the inside and outside, a thin part sufficiently thin to stop pressure between the thick parts, and this thin part on a part of the surface of the thin part. a Si strain-induced beam having a wall thickness greater than the thin wall portion and displacing while regulating the change as the thin wall portion is displaced;
It has a gauge resistor formed on the Si strain beam surface,
The Si strain beam has either one of an area enlarged area extending in the width direction of the Si strain beam and a wall thickness enlarged area having a thick wall portion in the thickness direction approximately at the center thereof. What is claimed is: 1. A semiconductor pressure sensor comprising: a semiconductor pressure sensor, wherein the gauge resistor is formed outside the region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15261082A JPS5943326A (en) | 1982-09-03 | 1982-09-03 | Semiconductor pressure detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15261082A JPS5943326A (en) | 1982-09-03 | 1982-09-03 | Semiconductor pressure detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5943326A JPS5943326A (en) | 1984-03-10 |
| JPH028253B2 true JPH028253B2 (en) | 1990-02-23 |
Family
ID=15544157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15261082A Granted JPS5943326A (en) | 1982-09-03 | 1982-09-03 | Semiconductor pressure detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5943326A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0742822Y2 (en) * | 1987-07-20 | 1995-10-04 | サンデン株式会社 | Automotive air conditioner |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52119971A (en) * | 1976-03-31 | 1977-10-07 | Honeywell Inc | Force converter |
| JPS5629136A (en) * | 1979-07-17 | 1981-03-23 | Data Instr Inc | Pressure converter and making method thereof |
-
1982
- 1982-09-03 JP JP15261082A patent/JPS5943326A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52119971A (en) * | 1976-03-31 | 1977-10-07 | Honeywell Inc | Force converter |
| JPS5629136A (en) * | 1979-07-17 | 1981-03-23 | Data Instr Inc | Pressure converter and making method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5943326A (en) | 1984-03-10 |
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