JPH0267741A - Capillary for wire bonding - Google Patents
Capillary for wire bondingInfo
- Publication number
- JPH0267741A JPH0267741A JP63219888A JP21988888A JPH0267741A JP H0267741 A JPH0267741 A JP H0267741A JP 63219888 A JP63219888 A JP 63219888A JP 21988888 A JP21988888 A JP 21988888A JP H0267741 A JPH0267741 A JP H0267741A
- Authority
- JP
- Japan
- Prior art keywords
- capillary
- alumina
- tip
- grain size
- crystal grain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000013078 crystal Substances 0.000 claims abstract description 17
- 239000000919 ceramic Substances 0.000 abstract description 6
- 239000002245 particle Substances 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 4
- 238000001746 injection moulding Methods 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 3
- -1 polyethylene Polymers 0.000 abstract description 3
- 239000004698 Polyethylene Substances 0.000 abstract description 2
- 229920000573 polyethylene Polymers 0.000 abstract description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 abstract 2
- 239000003966 growth inhibitor Substances 0.000 abstract 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 abstract 1
- 239000011148 porous material Substances 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010979 ruby Substances 0.000 description 4
- 229910001750 ruby Inorganic materials 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 101150034459 Parpbp gene Proteins 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910001593 boehmite Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はＬＳＩ、ＩＣなどの半導体装置のワイヤボンデ
ィングに使用する高強度のキャピラリーに関するもめで
ある
従来の技術
ＩＣの製造工程において、半導体チップの電極とパリゲ
ージのリードフレームのリード電極とを、直径００１５
〜０．１ｍｍ程度の金又はアルミニウムのｍｌ線でボン
ディングする工程がある。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a conventional technology that is related to high-strength capillaries used for wire bonding of semiconductor devices such as LSIs and ICs. The lead electrode of the lead frame of the pari gauge has a diameter of 0015 mm.
There is a process of bonding with gold or aluminum ml wire of about 0.1 mm.
このワイヤボンデインク工程はｍｌ線を直径００１５〜
０．１ｍ−程度の細孔を先端に有するキャピラリーの中
に挿通し、このキャピラリーを半導体チップの電極とパ
リゲージのリード電極間に交互に移動させながらそれぞ
れの所定位置にワイヤを溶接する工程である。This wire bonding process uses ml wire with a diameter of 0015~
This is a process in which the wire is inserted into a capillary that has a pore of about 0.1 m at its tip, and the capillary is moved alternately between the electrode of the semiconductor chip and the lead electrode of the pari gauge, and the wire is welded to each predetermined position. .
この工程時にキャピラリーの先端部分は半導体チップや
リードフレームと極めて高速で衝突するし、又ワイヤー
の先端を溶融してボール状物を形成する時に瞬時１１０
０°Ｃの高温と対向する。従って、キャピラリーの材質
の要求される特性は耐磨耗性、耐衝撃性、耐熱衝撃性等
である。During this process, the tip of the capillary collides with the semiconductor chip or lead frame at extremely high speed, and when the tip of the wire is melted to form a ball-shaped object, the tip of the capillary collides with the semiconductor chip or lead frame at an extremely high speed.
Facing high temperatures of 0°C. Therefore, the characteristics required of the capillary material include abrasion resistance, impact resistance, thermal shock resistance, and the like.
特に最近では半導体チップの小型化に伴い高密度のワイ
ヤボンディング、すなわち多ピン化か要請され、キャピ
ラリーの先端部を細くし、ワイヤボンディング時にキャ
ピラリーが隣のワイヤに接触しないようにしつつあるボ
１−ルネック型、サイドカット型と称するもので外径５
０μ−程度のものまで求められている。In particular, recently, with the miniaturization of semiconductor chips, there has been a demand for high-density wire bonding, that is, a large number of pins. These are called run neck type and side cut type, and the outer diameter is 5.
A value of about 0 μ- is required.
ボＩ・ルネック型のキャピラリーを使え４よ１００μｍ
ピッチのボンディング・パッドを接続できるが、耐久性
が低く、量産に向いてない。4 to 100 μm using a BoI-Lunec type capillary
Pitch bonding pads can be connected, but the durability is low and it is not suitable for mass production.
ギヤピラリ−とししてはアルミナ多結晶焼結体又はルビ
ー、サファイアなどのアルミナ単結晶で形成したものが
広く用いられている。Gear pillars made of polycrystalline sintered alumina or alumina single crystals such as ruby and sapphire are widely used.
発明が解決しようとする課題
ｌ、テ来のアルミナ多結晶セラミックス製ギヤピラリ−
の場合、結晶サイスが１μｍ以上あり、機械的強度が充
分高いとはいえず使用時に先端部分にクラ・・ｌり等の
欠陥か多々生ずる。The problem to be solved by the invention is a gear pillar made of technical alumina polycrystalline ceramics.
In the case of , the crystal size is 1 μm or more, and the mechanical strength is not sufficiently high, resulting in many defects such as cracks and cracks at the tip during use.
特に高密度のワ・イヤーボンイデングの必要性から先端
部外径が細くなるにしながい、通常のアルミナ多結晶焼
結体では強度不足か否めず先端クラックか多発せざるを
得ない。In particular, as the outer diameter of the tip becomes thinner due to the need for high-density wire bonding, ordinary alumina polycrystalline sintered bodies are inevitably insufficient in strength and often crack at the tip.
また、ルビー、サファイア等のアルミナ単結晶で形成し
たキャピラリーの場合はキャピラリー自体を製造する加
工工程中に発生したマイクロ・クラックに基づき、キャ
ピラリーをボンディング装置に取り付ける際などの取汲
い中に欠けや折れが発生することが多く、ボンディング
により寿命を全うするものに対し、途中で使用不能とな
るものが約５０％あった。In addition, in the case of capillaries made of alumina single crystals such as ruby and sapphire, micro-cracks occur during the manufacturing process of the capillary itself, and chipping and chipping may occur during the handling process such as when attaching the capillary to a bonding device. Brokenness often occurs, and while those that can complete their lifespan by bonding, about 50% of them become unusable midway through.
更にルビーやサファイヤはアルミナ多結晶焼結体に比べ
てコスＩ・か高いという問題かある。Furthermore, ruby and sapphire have a problem of higher cost I than polycrystalline sintered alumina.
本発明の目的は耐磨耗性、熟及び機械的強度を向上させ
たワイヤーホンディング用キャピラリーを提ｆ共するこ
とにある２
課題を解決するための手段
本発明は前記目的のためキャピラリーをアルミナ多結晶
焼結体で構成すると共に、その平均結晶粒子径を１μｍ
以下とし、かつ焼結体の密度を理論値の９９％以上とし
たものである。An object of the present invention is to provide a capillary for wire bonding with improved wear resistance, durability, and mechanical strength. Constructed of polycrystalline sintered body, with an average crystal grain size of 1 μm
and the density of the sintered body is 99% or more of the theoretical value.
結晶粒子径か１μｍを越えると機械的特性すなわち曲は
強度か低下し、また密度が理論値の９９％未満ではボア
ーかあり、衝撃に対して弱い。If the crystal grain size exceeds 1 μm, the mechanical properties, ie, bending strength, will decrease, and if the density is less than 99% of the theoretical value, there will be bores and it will be weak against impact.
。特にＴｌしいのは殆ど全部の結晶粒子径が１μｍ以下
である。. What is particularly interesting about Tl is that almost all the crystal grain sizes are 1 μm or less.
キャピラリーは図１に示すように中空孔１１を有する本
体１及び細孔２１を有する先端部２がら成っている。通
常本体１の外径は１５〜３ＩＩＩ１１、中空孔１１の径
は約０．８１１１１前後であり、先端部の細孔は００１
５〜０．１ｍ−である。全体の長さは通常０９〜１３■
−て゛ある。As shown in FIG. 1, the capillary consists of a main body 1 having a hollow hole 11 and a tip 2 having a pore 21. Normally, the outer diameter of the main body 1 is 15 to 3III11, the diameter of the hollow hole 11 is around 0.81111, and the pore at the tip is 0.011111.
5 to 0.1 m. The overall length is usually 09~13cm
-There is.
本発明の焼結体はその先端部だけでもよい。その場合は
通常池のキャピラリーと接続して使用される。The sintered body of the present invention may be used only at its tip. In that case, it is usually used in connection with a pond capillary.
本発明のワイヤボンディング用キャピラリーの製造法は
例えばバイヤーアルミナを微粉砕し、望ましくは１μＩ
以下に粉砕し、これにＭ（１０、Ｎｉ０５ＣＩ−２０３
、Ｔｉｅ□、ＭｎＯ，、等のアルミナの結晶成長抑制材
を添加し、更にワックス、ポリエチレン、ポリプロピレ
ン等の一次結合材を加えて混練し、これを中心にマンド
レルを有する射出成形機等によりキャピラリーに成形す
る。成形は焼結時の収縮を考慮して最終目標の２０ ％
程度大きくする。The method for manufacturing the capillary for wire bonding of the present invention is, for example, by finely pulverizing Bayer alumina and desirably 1 μI
Milled into the following, M (10, Ni05CI-203
, Tie□, MnO, etc. are added, and a primary binder such as wax, polyethylene, polypropylene, etc. is added and kneaded, and this is molded into a capillary using an injection molding machine with a mandrel in the center. Shape. The molding is 20% of the final target considering shrinkage during sintering.
Increase the degree.
製造法は上記の他ツルゲル法を利用した例えばベーマイ
トを酸で溶解してゾルとし、これにαアルミナの超微粉
を種子として加えた原料を用いることも出来る（特開昭
６Ｏ−２３１４６２）。In addition to the above-mentioned manufacturing method, for example, boehmite can be dissolved with acid to form a sol, and ultrafine α-alumina powder can be added as seeds to the raw material (Japanese Patent Laid-Open No. 6O-231462).
焼成は１２００〜１３００℃で行え平均結晶粒子径が１
μ園を越えないようにする。Calcination can be performed at 1200-1300℃ and the average crystal grain size is 1
Try not to go beyond μ-en.
実施例
平均結晶粒子が１μｍ以下とＩＪｉｎ＋以上の多結晶ア
ルミナ焼結体を以下の如く作成し、その特性比較を第１
表に、ワイヤーボンディングの評価試験結果を第２表に
示す。Example A polycrystalline alumina sintered body with an average crystal grain of 1 μm or less and IJin+ or more was prepared as follows, and its characteristics were compared in the first example.
Table 2 shows the wire bonding evaluation test results.
（イ）平均粒子径０．１７ｉｎ＋、純度９９９９％の高
純度アルミナ粉に同粒子径及び純度の酸化マグネシウム
粉を０．０Ｇ％（重量％、以下同じ）添加し、ボールミ
ルで湿式混合する。この混合物を８０℃で２４時間乾燥
する。(a) Add 0.0 G% (wt%, same hereinafter) of magnesium oxide powder with the same particle size and purity to high-purity alumina powder with an average particle size of 0.17 inches + and a purity of 9999%, and wet mix in a ball mill. This mixture is dried at 80° C. for 24 hours.
この乾燥粉１００重量部に分子量的１０００のワ・ソク
スを２０重量部添加し、ニーダで３０分間混練りし、更
に押出機で１２０°Ｃの条件下で５回押出し、混練りし
た。To 100 parts by weight of this dry powder, 20 parts by weight of Wa Sox having a molecular weight of 1000 was added, kneaded for 30 minutes in a kneader, and further extruded and kneaded 5 times at 120°C in an extruder.
この混練物を焼結後寸法より２０％大きいキャピラリー
形状のマンドレル挿入射出成形金型に、１４０°Ｃ１４
０ｋｇ／’ｃＪの射出圧条件で射出成形しな。成形体は
本体の外径２．６ ｍ、内径０９−１長さ１２５個であ
り、テーパー状をなす先端部は長さ２００μ譜で、細孔
は径３０μｍ、長さ１００μ■である。This kneaded material was placed in a capillary-shaped mandrel insertion injection mold that was 20% larger than the sintered size at 140°C.
Injection molding is performed at an injection pressure of 0 kg/'cJ. The molded body has an outer diameter of 2.6 m, an inner diameter of 09-1, and a length of 125 pieces, the tapered tip has a length of 200 μm, and the pores have a diameter of 30 μm and a length of 100 μm.
この成形体を空気中で室温から１０００’Ｃ迄焼成した
。ついで加湿水素雰囲気中で１３００°Ｃで２ ｈ ｒ
（”ｉ持し、焼結した。This molded body was fired in air from room temperature to 1000'C. Then, for 2 hours at 1300°C in a humidified hydrogen atmosphere.
(It was held and sintered.
（ロ）ベーマイｌ−＜Ａｔ２０． ・Ｈ２Ｏ）２０ｇ
、表面積５０ｍ２／ｇのｕ−Ａ１２ｏ、の微粉を０２ｇ
を１００ｃｃの水中に投入し攪拌し、ＨＮＯ，でＰＨ２
前後に調整し、ツルｒヒする。(b) Behmai l-<At20.・H2O) 20g
02g of fine powder of u-A12o with a surface area of 50m2/g
Pour into 100cc of water, stir, and adjust the pH to 2 with HNO.
Adjust it back and forth and slide it around.
このゾル化物を６０°□Ｘ１２１−ｚ−１１２０°Ｃ’
＜２４１＋ｒゲル化、乾燥し、ブロック状に成形後、６
００°Ｃ〉、２ｈｒでγＡ ｌ ２０ｖ （ヒした・
これより図１で示すような丸棒を旋盤で切り出し、それ
を昇温速度１００ ’Ｃ，／’ ｈ ｒで１３００°Ｃ
に加熱し、１時間保持し、焼結した９
焼結後ダイヤモンドドリルで図１に示すような中空孔及
び細孔をあけた。This sol was heated at 60°□X121-z-1120°C'
<241+r After gelation, drying, and molding into blocks, 6
00°C>, 2 hr, γA l 20v (Hit) From this, a round bar as shown in Figure 1 was cut out using a lathe, and heated to 1300°C at a heating rate of 100'C, /' hr.
After sintering, hollow holes and pores as shown in FIG. 1 were drilled using a diamond drill.
比較例
平均粒子径０４μｌ、純度９９９９％の高純度アルミナ
粉と前記の酸化マグネシウム粉を上記（イ）と同様に混
合、成形、焼成した。Comparative Example High-purity alumina powder with an average particle size of 04 μl and a purity of 9999% and the magnesium oxide powder described above were mixed, molded, and fired in the same manner as in (a) above.
更に加湿水素雰囲気で１５００°Ｃｌ２ｔ＋ｒ保持し、
焼結してキャピラリーを得な。Furthermore, 1500°Cl2t+r was maintained in a humidified hydrogen atmosphere.
Get a capillary by sintering.
第 １
表
第１表から明らかなように、本発明実施例である（イ）
、（ロ）のキャピラリーは、比較例のキャピラリーに比
べ、平均粒子径がｌｐｍより小さく、曲げ強度が大きい
。Table 1 As is clear from Table 1, this is an example of the present invention (a)
The capillary of (b) has an average particle diameter smaller than lpm and a higher bending strength than the capillary of the comparative example.
次に、これらのキャピラリー及びルビーより形成したキ
ャピラリーを用いてワイヤポンディング試験を行なった
。Next, a wire bonding test was conducted using these capillaries and a capillary made of ruby.
それぞれのキャピラリーを５個用意し、同一条件のもと
に金線でポンディングを行ない、ポンディング回数と導
線の接続状態の関係を調べた結果、それぞれの平均値は
第２表の通りであった。Five capillaries of each type were prepared and bonded with gold wire under the same conditions, and the relationship between the number of bonding cycles and the connection state of the conductor wires was investigated, and the average values for each were as shown in Table 2. Ta.
第２表
０：異常なし、Δ：ワイヤーの接続不良が若干発生×：
ワイヤーの接続不良が多発し、使用不能〔発明の効果〕
ワイヤポンディング用キャピラリーの少なくとも先端部
を平均結晶粒子径がＩｐｍ以下、密度が理論密度の３９
％以上のアルミナ多結晶セラミックスにより形成したこ
とによって１強度、耐摩耗性が大きく、欠けや寿命が長
くなり、従来の粒径の大きいアルミナ多結晶セラミック
ス或はアルミナ単結晶より優れている。Table 2 0: No abnormality, Δ: Slight wire connection failure ×:
Wire connection failures frequently occur, making it unusable. [Effect of the invention] At least the tip of the wire bonding capillary has an average crystal grain size of Ipm or less and a density of 39% of the theoretical density.
% or more of alumina polycrystalline ceramic, it has high strength, wear resistance, and long life against chipping, and is superior to conventional alumina polycrystalline ceramics with large grain size or alumina single crystal.
アルミナ単結晶の場合は、いったんクラックが発生する
と、！ｉｍｌ、熱衝撃を受けて、すぐ伝播する。又平均
結晶粒子径の大きいアルミナ多結晶セラミックスは強度
があまり大きくないこと、ポアーが存在することで、ク
ラックはアルミナ単結晶に比して、発生しやすいが、伝
播しにくいと推定される。In the case of alumina single crystal, once a crack occurs,! iml, which propagates quickly after receiving a thermal shock. Furthermore, since alumina polycrystalline ceramics having a large average crystal grain size do not have very high strength and have pores, cracks are more likely to occur than alumina single crystals, but it is presumed that they are less likely to propagate.
これらに比べて、結晶の平均粒子径がｌｐｍより小さい
緻密なアルミナ多結晶セラミックスは、強度が大きく、
クラックも発生しに〈〈、又ボアーも少ない為クラック
の伝播も少ない為と考えられる。Compared to these, dense alumina polycrystalline ceramics with an average grain size of less than lpm have greater strength and
This is thought to be because cracks do not occur, and since there are few bores, crack propagation is also small.
図１は本発明のワイヤポンディング用キャピラリーの正
面図である。
ｌ・・・・・・本体、２・・・・・・先端部、１１・・
・・・・中空孔２１・・・・・・細孔FIG. 1 is a front view of a capillary for wire bonding according to the present invention. l...Main body, 2...Tip, 11...
...Hollow hole 21...Small pore
Claims (1)
理論密度の９９％以上のアルミナ多結晶焼結体からなる
ワイヤボンディング用キャピラリーA capillary for wire bonding that is made of an alumina polycrystalline sintered body with at least the tip portion having an average crystal grain size of 1 μm or less and a density of 99% or more of the theoretical density.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63219888A JPH0267741A (en) | 1988-09-01 | 1988-09-01 | Capillary for wire bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63219888A JPH0267741A (en) | 1988-09-01 | 1988-09-01 | Capillary for wire bonding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0267741A true JPH0267741A (en) | 1990-03-07 |
Family
ID=16742619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63219888A Pending JPH0267741A (en) | 1988-09-01 | 1988-09-01 | Capillary for wire bonding |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0267741A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100349512B1 (en) * | 1999-08-28 | 2002-08-21 | 주식회사 페코 | Antistatic capillary or wedge |
| US6651864B2 (en) * | 1999-02-25 | 2003-11-25 | Steven Frederick Reiber | Dissipative ceramic bonding tool tip |
| KR100413033B1 (en) * | 2001-07-04 | 2003-12-31 | 주식회사 코스마 | Sintered material for polycrystalline ruby capillary used in wire bonding and method for manufacturing the same |
| KR100413034B1 (en) * | 2001-07-04 | 2003-12-31 | 주식회사 코스마 | Sintered material for multi color capillary used in wire bonding and method for manufacturing the same |
| US7032802B2 (en) | 1999-02-25 | 2006-04-25 | Reiber Steven F | Bonding tool with resistance |
| US7124927B2 (en) | 1999-02-25 | 2006-10-24 | Reiber Steven F | Flip chip bonding tool and ball placement capillary |
| US7389905B2 (en) | 1999-02-25 | 2008-06-24 | Reiber Steven F | Flip chip bonding tool tip |
| JP2009540624A (en) * | 2006-07-03 | 2009-11-19 | クリック アンド ソッファ インダストリーズ、インク． | Bonding tool with improved finish |
| CN102304806A (en) * | 2011-09-01 | 2012-01-04 | 吴江市隆泰喷织厂 | Shock absorbing device of water-jet loom |
| JP5376413B1 (en) * | 2013-01-25 | 2013-12-25 | Ｔｏｔｏ株式会社 | Bonding capillary |
| JP5614603B1 (en) * | 2013-12-03 | 2014-10-29 | Toto株式会社 | Bonding capillary |
-
1988
- 1988-09-01 JP JP63219888A patent/JPH0267741A/en active Pending
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6651864B2 (en) * | 1999-02-25 | 2003-11-25 | Steven Frederick Reiber | Dissipative ceramic bonding tool tip |
| US6935548B2 (en) | 1999-02-25 | 2005-08-30 | Steven-Frederick Reiber | Dissipative ceramic bonding tool tip |
| US7032802B2 (en) | 1999-02-25 | 2006-04-25 | Reiber Steven F | Bonding tool with resistance |
| US7124927B2 (en) | 1999-02-25 | 2006-10-24 | Reiber Steven F | Flip chip bonding tool and ball placement capillary |
| US7389905B2 (en) | 1999-02-25 | 2008-06-24 | Reiber Steven F | Flip chip bonding tool tip |
| KR100349512B1 (en) * | 1999-08-28 | 2002-08-21 | 주식회사 페코 | Antistatic capillary or wedge |
| KR100413033B1 (en) * | 2001-07-04 | 2003-12-31 | 주식회사 코스마 | Sintered material for polycrystalline ruby capillary used in wire bonding and method for manufacturing the same |
| KR100413034B1 (en) * | 2001-07-04 | 2003-12-31 | 주식회사 코스마 | Sintered material for multi color capillary used in wire bonding and method for manufacturing the same |
| JP2009540624A (en) * | 2006-07-03 | 2009-11-19 | クリック アンド ソッファ インダストリーズ、インク． | Bonding tool with improved finish |
| CN102304806A (en) * | 2011-09-01 | 2012-01-04 | 吴江市隆泰喷织厂 | Shock absorbing device of water-jet loom |
| JP5376413B1 (en) * | 2013-01-25 | 2013-12-25 | Ｔｏｔｏ株式会社 | Bonding capillary |
| CN103962713A (en) * | 2013-01-25 | 2014-08-06 | Toto株式会社 | Welding chopper |
| TWI466751B (en) * | 2013-01-25 | 2015-01-01 | Toto Ltd | Welding needle |
| CN108436251A (en) * | 2013-01-25 | 2018-08-24 | Toto株式会社 | Weld chopper |
| KR20180134806A (en) * | 2013-01-25 | 2018-12-19 | 토토 가부시키가이샤 | Bonding capillary |
| JP5614603B1 (en) * | 2013-12-03 | 2014-10-29 | Toto株式会社 | Bonding capillary |
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