JPH0267715A - Aligner and its exposure - Google Patents
Aligner and its exposureInfo
- Publication number
- JPH0267715A JPH0267715A JP63218303A JP21830388A JPH0267715A JP H0267715 A JPH0267715 A JP H0267715A JP 63218303 A JP63218303 A JP 63218303A JP 21830388 A JP21830388 A JP 21830388A JP H0267715 A JPH0267715 A JP H0267715A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- optical system
- mask
- light
- exposure apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 54
- 238000007689 inspection Methods 0.000 claims abstract description 43
- 238000005286 illumination Methods 0.000 claims abstract description 28
- 238000001514 detection method Methods 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000000126 substance Substances 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 230000007547 defect Effects 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 32
- 239000000523 sample Substances 0.000 description 27
- 238000010586 diagram Methods 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 241000257465 Echinoidea Species 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 241000357297 Atypichthys strigatus Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000000762 glandular Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔腫東上の利用分野〕
本発明は、シリコンウェハ、バブルウェハ、セラミック
基板、プリント基板などにマスクに設げた所定のパター
ンを焼きつける３１−３’ｅ、装置およびその方法に関
するものである。[Detailed Description of the Invention] [Field of Application on Mado] The present invention relates to a 31-3'e, an apparatus, and a method for printing a predetermined pattern provided on a mask onto a silicon wafer, bubble wafer, ceramic substrate, printed circuit board, etc. It is something.
従来の装置は、特開昭５９−１７２４７ 号に記載のよ
うに、露光位置で、ウェハ上にマスクのパターンを露光
焼付する露光方法において、ウニへ食形化位置で、ウェ
ハの表面の（１数箇所のウニへ尚さを測定し、かつ露光
位置において、移動可能なマスク高さ測定器により、マ
スク表面の複数置所のマスク高さを測定し、これらの結
果にもとづき、ウェハを吸着保持するチャックの複数箇
所で、各々独立して上下方向に微動させて、ウェハとマ
スクとのギャップを均一化するようにウェハを変形させ
た後、上記マスク高さ測定器を露光位置より待避させ、
上記露光位置へ、変形したウェハをチャックとともに露
光位置へ移動させて露光するようになっていた。As described in JP-A-59-17247, the conventional apparatus uses an exposure method in which a mask pattern is exposed and printed on a wafer at an exposure position. Measure the thickness of the sea urchin at several locations, and at the exposure position, measure the mask height at multiple locations on the mask surface using a movable mask height measuring device.Based on these results, the wafer is held by suction. After deforming the wafer so as to equalize the gap between the wafer and the mask by slightly moving the chuck independently in the vertical direction at multiple locations, the mask height measuring device is retracted from the exposure position,
The deformed wafer is moved together with the chuck to the exposure position and exposed.
上記従来技術は、露光直前におけるマスクの表裏両面及
びウェハ表面上の異物の存在に関して配慮されておらず
、以下の課題かあった。The above-mentioned conventional technology does not take into account the presence of foreign matter on both the front and back surfaces of the mask and on the wafer surface immediately before exposure, and has the following problems.
１） レジスト表面に付層した異物によりマスクのパタ
ーン面が傷つけられる。1) The pattern surface of the mask is damaged by foreign matter deposited on the resist surface.
２） マスクのパターン側に付層した異物によりレジス
ト表面が傷つげられる。2) Foreign matter attached to the pattern side of the mask damages the resist surface.
５） 設定ギャップより大きい異物忙よりマスクとウニ
４間のギャップ不良を引き起こす。5) Foreign matter larger than the set gap causes a gap failure between the mask and the sea urchin 4.
４）マスクの表面又は裏面上に付層した異物やウェハ上
の異物により転写不良を引き起こす。4) Foreign matter deposited on the front or back surface of the mask or foreign matter on the wafer causes transfer defects.
本発明の目的は、上記の問題を解決し、半導体や８気バ
ブル、連層・薄膜回路やプリント基板などの歩留まりを
向上させるようにした露光装置およびその方法を提供す
ることにある。SUMMARY OF THE INVENTION An object of the present invention is to provide an exposure apparatus and method that solves the above-mentioned problems and improves the yield of semiconductors, 8-air bubbles, multilayer/thin film circuits, printed circuit boards, and the like.
上記目的は、試料表面およびマスク面を異物検査する機
能を備え付けた露光装置をクリーンチャンバ内に設置す
ることにより、達成される。The above object is achieved by installing in a clean chamber an exposure device equipped with a function of inspecting the sample surface and the mask surface for foreign substances.
また、異物検査機能を備え付けるため、他の部分のコン
パクト化を図る必要がある。それは、試料高さとマスク
高さを１つの測定器で測定することにより達成される。In addition, since it is equipped with a foreign object inspection function, it is necessary to make other parts more compact. It is achieved by measuring the sample height and mask height with one measuring instrument.
露光装置において、クリーンチャンバ内に設置すること
により、クリーンチャンバ内では異物が発生しない芥囲
気を作っている。また、異物検査ａ能で試料表面および
マスク面上の異物を検査する。異物が存在していれば、
露光焼付を行わず、異物を除去して再度露光工程を行う
。それによって、異物の無い状態でｇ元焼付を行うこと
かできるので、試料のパターン欠陥を生じなくなる。By installing the exposure apparatus in a clean chamber, an atmosphere is created within the clean chamber in which no foreign matter is generated. In addition, foreign matter on the sample surface and mask surface is inspected using the foreign matter inspection function. If a foreign object is present,
The exposure process is performed again after removing foreign matter without performing exposure printing. As a result, g-base printing can be performed in the absence of foreign matter, thereby eliminating pattern defects in the sample.
以下、本発明の一実施例を第１図、第２図により説明す
る。露光光学系１とアライメント光学系２とマスクチャ
ック６とパターンａを有−ｆ；Ｅ：ｒマスク５とマスク
と基板の間隙測定器６と基板７を真空ｅ、漕した基板変
形チャック８と異物検査器９とマスクアンローダ−１０
と基板アンローダ−１１とコントａ−ラ１２とクリーン
チャンバ１５から構成されている。次に、本露光装置に
ついて説明する。An embodiment of the present invention will be described below with reference to FIGS. 1 and 2. The exposure optical system 1, the alignment optical system 2, the mask chuck 6, and the pattern a are present. Inspection device 9 and mask unloader 10
, a substrate unloader 11 , a controller 12 , and a clean chamber 15 . Next, the present exposure apparatus will be explained.
まず、異物検査エリア２１でマスク５の異物検査を行う
。この異物情報は、コン）ａ−ラ１２に送られマスク５
に異物が無けれはアンロードエリア２２を通過し、露光
エリア２３にセクトされる（ａｒ。マスク５に異物が有
れば、アンロードエリア２２から洗浄工程に送られる（
ｈｌ。同様に、異物検査エリア２１で基板７の異物検査
を行う。基板７に異物が無けれはアンロードエリア２２
を通過し、露光エリア２５にセットされる工α１゜基板
７に異物が有れば、アンロードエリア２２から洗浄工程
に送られる（ｂｌ。ここで、異ｇ：Ｊ検査におけるスキ
ャン方法は、異物検査器９は固定であるため、マスク５
と基板７をスキャンして異物検査を行う。露光エリア２
３にマスク５と基板７がセットされれば、間隙測定器６
を移動し、間隙が一定値になるように基板変形チャック
８を枢動して快く。基板変形チャック８は、溝により分
割されたチャック面と引張りバネと上下動台とチャック
面の左右ずれ止め（図示せず）からなり間隙測定値によ
りコントローラ１２で、上下動台をＩｊＡＩＸＩＪする
。間隙測定器６がマスク５・基板７の間を抜けると、間
隙１２は一定（又は、Ｐｆｒ望の僅〕罠なる。間隙測定
器６を戻す時に間隙を確認し、許容値内ならば、基板変
形チャツク８全体を上下駆動系により上昇させ、所望の
間麺で一時停止する。First, the mask 5 is inspected for foreign substances in the foreign substance inspection area 21 . This foreign material information is sent to the controller 12 and the mask 5
If there is no foreign matter on the mask 5, it passes through the unload area 22 and is sected to the exposure area 23 (ar. If there is any foreign matter on the mask 5, it is sent from the unload area 22 to the cleaning process (ar).
hl. Similarly, the substrate 7 is inspected for foreign matter in the foreign matter inspection area 21. If there is no foreign matter on the board 7, unload area 22
If there is any foreign matter on the workpiece α1° substrate 7 that passes through and is set in the exposure area 25, it is sent to the cleaning process from the unload area 22 (bl. Here, the scanning method in the foreign Since the inspection device 9 is fixed, the mask 5
and scans the board 7 to perform a foreign matter inspection. Exposure area 2
3, the mask 5 and substrate 7 are set, the gap measuring device 6
, and pivot the substrate deformation chuck 8 so that the gap becomes a constant value. The substrate deforming chuck 8 is composed of a chuck surface divided by grooves, a tension spring, a vertically moving table, and a left-right shift stopper (not shown) for the chuck surface, and the vertically moving table is controlled by the controller 12 according to the gap measurement value. When the gap measuring device 6 passes between the mask 5 and the substrate 7, the gap 12 becomes constant (or slightly below the desired Pfr). When returning the gap measuring device 6, check the gap, and if it is within the allowable value, the substrate The entire deformed chuck 8 is raised by a vertical drive system and temporarily stopped at a desired length of noodles.
ここで、アライメント元学系２により基板７、マスク５
を７ライメントし、アライメント終了恢までに基板変形
チャック８を上昇し、Ｐ９ｒ望の露光間隙にセットし、
アライメント元学系２を退避し露光する。Here, according to alignment element system 2, substrate 7, mask 5
7 alignments, and by the end of the alignment, raise the substrate deformation chuck 8 and set it to the desired exposure gap P9r.
Evacuate alignment source system 2 and expose.
間＠測定器６には、空気マイクロメータ、電磁気型測定
器、静電容量形測定器、超音技利用の測定器などが考え
られる。Possible examples of the measuring device 6 include an air micrometer, an electromagnetic measuring device, a capacitive measuring device, and a measuring device using ultrasonic technology.
また、基′＆父父上上下動素子しては、モータに連結さ
れたネジの他にピエゾ索子などがある。In addition to the screw connected to the motor, the base and father vertically moving elements include piezo cables and the like.
次に、１４物検査エリア２１における異物検査法につい
て説明する。まず、マスク５を異物検査した後は、異物
検査器９を下降し、基板７の異物検査を行う。したがっ
て、１つの異物検査器で、マスク５と基板７を測定でき
る構成と成っている。ここで、この異物検査器９は、元
蓋切換えを有するものと成っている。マスク５と基板７
では１反射率が異なるため、それに対応するためである
。元意切換えの手段としては、ＡＯ変調器、ＰＬＺＴ（
を気光学結晶）などがある。Next, a foreign object inspection method in the 14-object inspection area 21 will be explained. First, after inspecting the mask 5 for foreign matter, the foreign matter inspection device 9 is lowered and the substrate 7 is inspected for foreign matter. Therefore, the structure is such that the mask 5 and the substrate 7 can be measured with one foreign substance inspection device. Here, this foreign matter inspection device 9 has a main cover switch. Mask 5 and substrate 7
This is to accommodate the difference in reflectance. As means for switching the original purpose, AO modulator, PLZT (
There are also optical crystals).
以上の路光工程の流れを第３図に示している。The flow of the above path light process is shown in FIG.
次ＫＸ物検査器について説明する。まず、第４図にｆ８
射照明検出方式のみ備えた異物検査器を示す。光源３１
から出た光は、光量切換え器６２．腺状光学系３３．ハ
ーフミラ−３６を通って試料３７上を嶽状５８に照明す
る。試料５７からの反射光は、ハーフミラ−３６を通り
、集光レンズ４４によって一次元固体撮像素子４６上に
結像する。一次元固体撮像菓子４６からの信号は、二値
化回路４７．演算回路４８を経て異物表示部４９ Ｋ表
示される。なお、本実施例では、線状光学系５３の線状
光学素子としてシリンドリカルレンズ５４を、また、光
源３１として半導体レーザを用いている。さらに、集光
レンズ４４と一次元固体撮像素子４６の間には還元光学
系４５を設けてあり、その位置は集光レンズ４４のフー
リエ入換面忙相当する。Next, the KX object inspection device will be explained. First, in Figure 4, f8
This shows a foreign object inspection device equipped with only an irradiation detection method. light source 31
The light emitted from the light intensity switch 62. Glandular optical system 33. The sample 37 is illuminated in a concave shape 58 through a half mirror 36. The reflected light from the sample 57 passes through the half mirror 36 and is imaged onto the one-dimensional solid-state image sensor 46 by the condenser lens 44 . The signal from the one-dimensional solid-state imaging confectionery 46 is transmitted to the binarization circuit 47. After passing through the arithmetic circuit 48, it is displayed on the foreign object display section 49K. In this embodiment, a cylindrical lens 54 is used as the linear optical element of the linear optical system 53, and a semiconductor laser is used as the light source 31. Furthermore, a reduction optical system 45 is provided between the condenser lens 44 and the one-dimensional solid-state image sensor 46, and its position corresponds to the Fourier exchange plane of the condenser lens 44.
謁５図に試料３７上の１貼パターンを示す。また。Figure 5 shows the pattern of one patch on sample 37. Also.
ｍ ６ ＶＱＣｉ＆元光学系４５における遮光板の形状
を示す。記６図（α）の遮光板は、落射照明検出方式の
時のみ必要とし、試料３７上に回路パターンが無い場合
に用い、試料３７上からの正反射光を連光し、試料３７
上の異物からの散乱光のみを通過させようとするもので
ある。藁６図（邊）の遮光板は、論４図に示す試料３７
上の５５および５６のような回路パターンからの散乱光
を遮光し、異物からの散乱光のみを通過させるの忙用い
、また、講６図ｔｃ＋の遮光板は、第５図に示す試料３
７上の５７および５８のような回路パターンからの散乱
光を遮光し、異物からの散乱光のみを通過させるのく用
いる。したがって、これらの遮光板は、試料上の回路パ
ターンの形状により任意に交換可能な構成になっている
。m 6 VQCi & The shape of the light shielding plate in the original optical system 45 is shown. The light shielding plate shown in Figure 6 (α) is required only when using the epi-illumination detection method, and is used when there is no circuit pattern on the sample 37.
This is intended to allow only the scattered light from the foreign object above to pass through. The light shielding plate shown in Figure 6 (side) is the sample 37 shown in Figure 4.
The light-shielding plate shown in Figure 6 tc+ is used to block the scattered light from the circuit patterns 55 and 56 above and to pass only the scattered light from foreign objects.
It is used to block scattered light from circuit patterns such as 57 and 58 on 7, and to allow only scattered light from foreign objects to pass through. Therefore, these light shielding plates are configured to be replaceable as desired depending on the shape of the circuit pattern on the sample.
ｉ＠７図に落射照明検出方式異物検査器の部分構成図を
示す。落射照明検出方式では、帛７図（α１のようにハ
ーフミラ−３６が集光レンズ４４の上側にある場合が考
えられる。しかし、Ｘ方向から試料３７を照明しＢ方向
に検出する場合も、Ｃ方向から試料３７を照明しＤ方向
に検出する場合も、集光レンズ４４からの反射光による
迷光な検出ｇａＫ伴ない、その光学ノイズによる異物検
出性能の低下をもたらす。そこで、照明による光学ノイ
ズを無くすために１本発明装置では、第７図［，６１に
示すようにハーフミラ−３６は集光レンズ５４の下側に
配置している。i@Figure 7 shows a partial configuration diagram of the epi-illumination detection type foreign object inspection device. In the epi-illumination detection method, there is a case where the half mirror 36 is located above the condenser lens 44 as shown in Figure 7 (α1).However, when the sample 37 is illuminated from the X direction and detected in the B direction, the C Even when the sample 37 is illuminated from the direction and detected in the D direction, stray light is detected due to the reflected light from the condenser lens 44, and the foreign object detection performance is degraded due to the optical noise.Therefore, the optical noise due to the illumination is In order to eliminate this problem, in the apparatus of the present invention, the half mirror 36 is disposed below the condenser lens 54, as shown in FIG. 7[, 61].
第８図に線状光走査方法の説明−を示す。試料５７上に
照明された線状光３８の長手方向（Ｘ方向）の幅αは、
Ｘ方向の検査範囲に相当する。したがって、試料３７上
の検査領域の全てを検査するために、試料３７を固定し
ているステージ５０あるいは検査器自体をＹ方向に移動
する。ゆえに、従来用いられていた試料上全面スポット
走査方式に較べ大喝な検査時間の短縮を図ることができ
る。FIG. 8 shows an explanation of the linear light scanning method. The width α in the longitudinal direction (X direction) of the linear light 38 illuminated on the sample 57 is:
This corresponds to the inspection range in the X direction. Therefore, in order to inspect the entire inspection area on the sample 37, the stage 50 fixing the sample 37 or the inspection device itself is moved in the Y direction. Therefore, the inspection time can be significantly reduced compared to the conventionally used spot scanning method for the entire surface of the sample.
次に、第９図に斜方照明検出方式のみ備えた異物検査器
を示す。光源３９から出た光は、光路切換え器４０．Ｎ
Ｍ状光学系４１を経て、試料３７上を線状３８に照明す
る。試料３７からの反射光は、集光レンズ４４．遮光光
学系４５．一次元固体燻像索子４６の検出光学系に入る
。一次元固体撮像素子４６からの信号は、二値化回路４
７．演算回路４８を経て異物表示部４９に表示される。Next, FIG. 9 shows a foreign object inspection device equipped only with an oblique illumination detection method. The light emitted from the light source 39 passes through the optical path switch 40. N
The sample 37 is illuminated linearly 38 through an M-shaped optical system 41 . The reflected light from the sample 37 is collected by a condenser lens 44. Shading optical system 45. It enters the detection optical system of the one-dimensional solid-state smoked probe 46. The signal from the one-dimensional solid-state image sensor 46 is transmitted to the binarization circuit 4
7. It is displayed on the foreign object display section 49 via the arithmetic circuit 48.
なお、本実施例では、線状光学系４０の線状光学素子と
してシリンドリカルレンズ４２を、また、光源３９とし
て半導体レーザな用いている。遮光光学系４５における
還元板の形状は第６因に、また、線状光走査法は巣８図
に示したのと同様である。In this embodiment, a cylindrical lens 42 is used as the linear optical element of the linear optical system 40, and a semiconductor laser is used as the light source 39. The shape of the reduction plate in the light-shielding optical system 45 is the same as that shown in the sixth factor, and the linear light scanning method is the same as that shown in Figure 8.
次忙、第１０図に落射照明検出方式と斜方照明検出方式
を備えた異物検査器を示す。落射照明検出系にお輩ては
、光源３１から出た光は、光量切換え器５２ 、 ｉ状
光学系３５．ハーフミラ−３６を通って試料３７上を線
状３８ Ｋ照明する。試料３７からの反射光は、ハーフ
ミラ−５６を通り、集光レンズ４４によって一次元固体
射像素子４６上に結像する。集光レンズ４４と一次元固
体撮像累子４６の間には遮光光学系を設げている。一次
元固体撮像素子４６からの信号は、二値化回路４７．演
算回路４８を経て異物表示部４９に表示される。また、
斜方照明検出系においては、光源３９から出た光は、光
量切換え器４０１ｓ状光学系４１を経て試料３７上を線
状５８に照明する。試料５７からの反射光は、落射照明
検出系と同様、ハーフさチー５６１８光レンズ４４．遮
光光学系４５．一次元固体撮像素子４６の検出光学系に
入り、一次元固体撮像素子４６からの信号は、二値化回
路４７．演算回路４８を経て異物表示部４９に表示され
る。なお、本実施例では、線状光学系５５オよび４１の
線状光学素子としてシリンドリカルレンズ３４および４
２を、また、光源３１および３９として半導体レーザを
用いている。遮光光学系４５における還元板の形状はａ
ｔ！６図に、また、線状光走査方法は第８図に示したの
と同様である。Figure 10 shows a foreign object inspection device equipped with an epi-illumination detection method and an oblique illumination detection method. In the epi-illumination detection system, the light emitted from the light source 31 is passed through a light amount switch 52, an i-shaped optical system 35. A linear 38 K illumination is applied onto the sample 37 through the half mirror 36. The reflected light from the sample 37 passes through the half mirror 56 and forms an image on the one-dimensional solid-state imaging element 46 by the condenser lens 44 . A light shielding optical system is provided between the condenser lens 44 and the one-dimensional solid-state imaging element 46. The signal from the one-dimensional solid-state image sensor 46 is transmitted to a binarization circuit 47. It is displayed on the foreign object display section 49 via the arithmetic circuit 48. Also,
In the oblique illumination detection system, the light emitted from the light source 39 illuminates the sample 37 in a linear form 58 through the light intensity switch 401s-shaped optical system 41. Similar to the epi-illumination detection system, the reflected light from the sample 57 is transmitted through the half-sky 5618 light lens 44. Shading optical system 45. The signal from the one-dimensional solid-state image sensor 46 enters the detection optical system of the one-dimensional solid-state image sensor 46, and the signal from the one-dimensional solid-state image sensor 46 is input to the binarization circuit 47. It is displayed on the foreign object display section 49 via the arithmetic circuit 48. In addition, in this embodiment, the cylindrical lenses 34 and 4 are used as the linear optical elements of the linear optical systems 55 and 41.
In addition, semiconductor lasers are used as the light sources 31 and 39. The shape of the reduction plate in the light shielding optical system 45 is a
T! The linear light scanning method shown in FIG. 6 is the same as that shown in FIG.
第１１因に落射照明検出方式と斜方照明検出方式を備え
た異物検査器の使用手順のフローチャートを示す。試料
３７上の回路パターンの有無および試料３７の平坦１１
により照明検出系を選択し、試料３７上の回路パターン
の形状により遮光板を選択するようになっている。The eleventh factor is a flowchart of a procedure for using a foreign object inspection device equipped with an epi-illumination detection method and an oblique illumination detection method. Presence or absence of circuit pattern on sample 37 and flatness 11 of sample 37
The illumination detection system is selected according to the following, and the light shielding plate is selected according to the shape of the circuit pattern on the sample 37.
マスクは平坦度が高（、基板は平坦度が低いため、主に
マスク側の異物検査は斜方照明検出方式を用い、基板側
の異物検査は落射照明検出方式を用いる。Since the mask has a high degree of flatness (and the substrate has a low degree of flatness), the oblique illumination detection method is mainly used to inspect for foreign particles on the mask side, and the epi-illumination detection method is used to inspect for foreign particles on the substrate side.
次に他の実施例について説明する。Next, other embodiments will be described.
第１２図、第１３図、第１４図は異物検査器９とアライ
メント光学系２が一体化した例である。まず、基板異物
検査エリア２４で異物検査器９を下降＠し基板変形チャ
ック８に真空吸着された基板７の異物検査を行う。この
異物情報はコン）ｏ−ラ１２に送られる。基板７Ｖｃ異
物が有れば、その基板７は洗浄工程に送られ＋０１次の
基板７’ｆｄ＋を異物検査する。12, 13, and 14 are examples in which the foreign object inspection device 9 and the alignment optical system 2 are integrated. First, the foreign matter detector 9 is lowered in the substrate foreign matter inspection area 24, and the substrate 7 vacuum-adsorbed by the substrate deformation chuck 8 is inspected for foreign matter. This foreign object information is sent to controller 12. If there is any foreign matter on the substrate 7Vc, that substrate 7 is sent to a cleaning process and the +01-order board 7'fd+ is inspected for foreign matter.
基板７に異物が無けれは露光エリア２３に移動する（ｇ
ｌ。基板７の異物検査が終了すると、異物検査器ｆｉ９
を上昇０させ、水平移動０し、Ａ！ｌエリア２５に移動
する。次に、マスクチャック５にセットされているマス
ク５の異物検査を行う。マスク５に異物が有ればアンミ
ードし、σ）、洗浄し再度マスクチャック３にセットし
くりマスク５の異物検査を行う。マスク５に異物が無げ
れば、あるいは無くなれば、マスク５の異物検査を終了
する。ここで、異物検査におけるスキャン方法は、基板
７の異物検査を行うときは、基板７をスキャンする。ま
た＝マスク５の異物検査を行うときは、異物検査器９を
スキャンする。次に、マスク５と基板７０間隙を一定値
に設定し、マスク５と基板７のアライメントを異物検査
器９内にあるアライメント光学系２で行い、マスク５と
基板７を露光間隙値に設定後、異物検査器９を退避し露
光する。If there is no foreign matter on the substrate 7, move to the exposure area 23 (g
l. When the foreign matter inspection of the board 7 is completed, the foreign matter inspection device fi9
Raise to 0, horizontally move to 0, A! Move to area 25. Next, the mask 5 set on the mask chuck 5 is inspected for foreign substances. If there is any foreign matter on the mask 5, it is unmeaded (σ), cleaned, and set on the mask chuck 3 again, and the mask 5 is inspected for foreign matter. If there is no foreign matter on the mask 5, or if it disappears, the foreign matter inspection of the mask 5 is completed. Here, in the scanning method for foreign matter inspection, when inspecting the substrate 7 for foreign matter, the substrate 7 is scanned. Further, when inspecting the mask 5 for foreign substances, the foreign substance detector 9 is scanned. Next, the gap between the mask 5 and the substrate 70 is set to a constant value, and alignment of the mask 5 and the substrate 7 is performed using the alignment optical system 2 in the foreign object inspection device 9. After setting the mask 5 and the substrate 7 to the exposure gap value, , the foreign object detector 9 is retracted and exposed.
次に、本笑施例における異物検査器９について説明する
。第１５図はアライメント光学系２が北１０図の異物検
査器に組込まれた場合である。ライトガイド７０に導入
された光は、ノ１−フミラー７１α。Next, the foreign object inspection device 9 in this embodiment will be explained. FIG. 15 shows a case where the alignment optical system 2 is incorporated into the foreign object inspection device shown in FIG. The light introduced into the light guide 70 passes through a nof mirror 71α.
７１ｈにより反射され、マスク５上のアライメントマー
ク８０α、８０ｂ及び、基板Ｚ上のアライメントマーク
８１α、８１ｂを照明する。そのアライメントマークを
集光レンズ４０α、４０ｂを通して、−次冗固体撮像累
子７３α、７５ｂで検出する。その後、一次元固体撮像
素子駆動回路７４．インターフェース回路７５＃計算ａ
７６、コントａ−ラフ７を介して、マスク５のアライメ
ントマーク８０α、８０ｂに基板７を駆動し″′Ｃ基板
７のアライメントマーク８１α。71h, and illuminates the alignment marks 80α, 80b on the mask 5 and the alignment marks 81α, 81b on the substrate Z. The alignment mark is detected by the redundant solid-state imaging elements 73α and 75b through the condenser lenses 40α and 40b. After that, the one-dimensional solid-state image sensor driving circuit 74. Interface circuit 75# calculation a
76. Drive the substrate 7 to the alignment marks 80α, 80b of the mask 5 via the contour 7.''C alignment mark 81α of the substrate 7.
８１ｂを合わせ、アライメントを完了する。81b to complete the alignment.
藁１図は本発明の露光装置の一実施例を示す正面図、纂
２図は帛１図に示す装置の勘きを示す平面図、巣３図は
本発明に係る露光工程のフローチャートを示す因、第４
図は本発明に係る異物検査器を説明するだめの図、第５
図は試料上の回路パターンを示す図、第６図は異物検査
器における連光板の形状を示す囚、第７図は本発明に係
る落射照明検出方式の異物検査器を示す部分構成図、第
８図は本発明に係る線状光°走査方法な説明するための
図、第９図及び第１０−は各々本発明に係る他の異物検
査器を説明するための図、第１１図は本発明に係る落射
照明検出方式と斜方照明検出方式を備えた異物検査器の
使用手順のフローチャートを示す図、第１２図は本発明
の露光装置の他の一実施例を示す正面図、集１６図及び
＠１４図は各々第１２図に示す装置の動きを示す平面図
、第１５図は本発明に係るアライメント光学系が一体化
された異物検出器を説明するだめの図である。
符号の説明
１・・・露光光学系
３・・・マスクチャック
５・・・マスク
７・・・基板
９・・・異物検出器
２・・・アライメント光学系
４・・・パターン
６・・・間隙測定器
８・・・基板変形チャック
１２・・・コントａ−ラ
〒２図
４５図
〒４図
（α）
ｍ５図
￥５６図
（ｂ）
４８図
（Ｃ）
弼７図
〒ａ図
４１０図
４１２図
倦１１図Figure 1 is a front view showing an embodiment of the exposure apparatus of the present invention, Figure 2 is a plan view showing the concept of the apparatus shown in Figure 1, and Figure 3 is a flowchart of the exposure process according to the present invention. Cause, 4th
The figure is a fifth diagram for explaining the foreign object inspection device according to the present invention.
The figure shows a circuit pattern on a sample, FIG. 6 shows the shape of a continuous light plate in a foreign object detector, and FIG. 7 shows a partial configuration of a foreign object detector using epi-illumination detection method according to the present invention. Figure 8 is a diagram for explaining the linear light scanning method according to the present invention, Figures 9 and 10 are diagrams for explaining other foreign object inspection devices according to the present invention, and Figure 11 is a diagram for explaining the present invention. FIG. 12 is a diagram showing a flowchart of the procedure for using a foreign object inspection device equipped with an epi-illumination detection method and an oblique illumination detection method according to the invention, and FIG. 12 is a front view showing another embodiment of the exposure apparatus of the invention, Collection 16 14 and 14 are plan views showing the movement of the apparatus shown in FIG. 12, respectively, and FIG. 15 is a diagram for explaining a foreign object detector integrated with an alignment optical system according to the present invention. Explanation of symbols 1...Exposure optical system 3...Mask chuck 5...Mask 7...Substrate 9...Foreign object detector 2...Alignment optical system 4...Pattern 6...Gap Measuring instrument 8...Substrate deformation chuck 12...Controller 2 Figure 45 Figure 4 (α) Figure m5 ¥56 Figure (b) Figure 48 (C) Figure 27 Figure 410 Figure 412 Figure 11
Claims (1)
おいて、異物の発生しない雰囲気の中にある露光装置内
部に、試料及びマスク上を異物検査する機能を備え付け
たことを特徴とする露光装置。 ２、上記異物検査機能は、光源、線状光学系から成る落
射照明光学系と、一次元固体撮像素子、マスクあるいは
試料からの反射光を該一次元固体撮像素子上に結像する
集光レンズと遮光光学系から成る検出光学系と、該一次
元固体撮像素子の出力信号の二値化回路と、該二値化回
路の出力信号の演算回路と、異物表示部を有することを
特徴とする請求項１記載の露光装置。 ３、上記異物検査機能は、光源、線状光学系から成る斜
方照明光学系と、一次元固体撮像素子、マスクあるいは
試料からの反射光を該一次元固体撮像素子上に結像する
集光レンズと遮光光学系から成る検出光学系と、該一次
元固体撮像素子の出力信号の二値化回路と、該二値化回
路の出力信号の演算回路と、異物表示部を有することを
特徴とする請求項１記載の露光装置。 ４、上記異物検査機能は、光源、線状光学系から成る落
射照明光学系と、光源、線状光学系から成る斜方照明光
学系と、一次元固体撮像素子、マスクあるいは試料から
の反射光を該一次元固体撮像素子上に結像する集光レン
ズと遮光光学系から成る検出光学系と、該一次元固体撮
像素子の出力信号の二値化回路と、該二値化回路の出力
信号の演算回路と、異物表示部を有することを特徴とす
る請求項１記載の露光装置。 ５、上記異物検査機能の落射照明光学系は、集光レンズ
とマスクあるいは試料との間に位置することを特徴とす
る請求項１記載の露光装置。 ６、上記異物検査機能の遮光光学系は、落射照明光学系
によつて生じるマスクあるいは試料面からの正反射光を
遮光する遮光板、また、マスクあるいは試料上の様々な
パターンからの散乱光をパターンに応じて遮光する遮光
板を有し、任意に変えられることを特徴とする請求項１
記載の露光装置。 ７、上記異物検査機能の落射照明光学系と斜方照明光学
系の光源として、半導体レーザを用いることを特徴とす
る請求項１記載の露光装置。 ８、上記露光装置において、マスクと試料間のギャップ
を均一化するように試料を変形させることを特徴とする
請求項１記載の露光装置。 ９、表面の複数箇所の試料高さとマスク表面の複数箇所
のマスク高さを、移動可能な試料及びマスク高さ測定器
により測定し、これらの結果にもとづき、試料を吸着保
持するチヤツクの複数箇所で、各々独立して上下方向に
微動させて、試料とマスクとのギャップを均一化するよ
うに試料を変形させた後、上記試料及びマスク高さ測定
器を待避させて露光することを特徴とする請求項１記載
の露光装置。 １０、試料上にマスクパターンを露光焼付する露光方法
において、露光焼付する直前に、試料表面及びマスクの
表裏両面を異物検査することを特徴とする露光方法。 １１、上記異物検査は、試料とマスクを光量切換えによ
り１つの異物検査器で検査することを特徴とする請求項
１０記載の露光方法。[Scope of Claims] 1. An exposure apparatus that exposes and prints a mask pattern on a sample, characterized in that the exposure apparatus is equipped with a function for inspecting the sample and the mask for foreign substances in an atmosphere where no foreign substances are generated. Exposure equipment. 2. The above foreign object inspection function includes a light source, an epi-illumination optical system consisting of a linear optical system, a one-dimensional solid-state image sensor, and a condenser lens that focuses reflected light from a mask or sample onto the one-dimensional solid-state image sensor. and a detection optical system consisting of a light-shielding optical system, a binarization circuit for the output signal of the one-dimensional solid-state image sensor, an arithmetic circuit for the output signal of the binarization circuit, and a foreign object display section. An exposure apparatus according to claim 1. 3. The above foreign matter inspection function consists of a light source, an oblique illumination optical system consisting of a linear optical system, a one-dimensional solid-state image sensor, and a condenser that focuses reflected light from a mask or sample onto the one-dimensional solid-state image sensor. It is characterized by having a detection optical system consisting of a lens and a light-shielding optical system, a binarization circuit for the output signal of the one-dimensional solid-state image sensor, an arithmetic circuit for the output signal of the binarization circuit, and a foreign object display section. The exposure apparatus according to claim 1. 4. The above foreign object inspection function uses an epi-illumination optical system consisting of a light source and a linear optical system, an oblique illumination optical system consisting of a light source and a linear optical system, and reflected light from a one-dimensional solid-state image sensor, mask, or sample. a detection optical system consisting of a condensing lens and a light shielding optical system for forming an image on the one-dimensional solid-state image sensor, a binarization circuit for the output signal of the one-dimensional solid-state image sensor, and an output signal of the binarization circuit. 2. The exposure apparatus according to claim 1, further comprising: an arithmetic circuit; and a foreign matter display section. 5. The exposure apparatus according to claim 1, wherein the epi-illumination optical system for the foreign matter inspection function is located between a condenser lens and a mask or a sample. 6. The light-shielding optical system for the above-mentioned foreign object inspection function is a light-shielding plate that blocks specularly reflected light from the mask or sample surface generated by the epi-illumination optical system, and also blocks scattered light from various patterns on the mask or sample. Claim 1 characterized in that it has a light shielding plate that blocks light according to a pattern and can be changed arbitrarily.
The exposure apparatus described. 7. The exposure apparatus according to claim 1, wherein a semiconductor laser is used as a light source for an epi-illumination optical system and an oblique illumination optical system for the foreign matter inspection function. 8. The exposure apparatus according to claim 1, wherein the exposure apparatus deforms the sample so as to equalize the gap between the mask and the sample. 9. Measure the sample height at multiple locations on the surface and the mask height at multiple locations on the mask surface using a movable sample and mask height measuring device, and based on these results, measure the sample height at multiple locations on the chuck that holds the sample by suction. The method is characterized in that the sample is deformed so as to equalize the gap between the sample and the mask by slightly moving each of them in the vertical direction independently, and then the sample and mask height measuring device are retracted and exposed. The exposure apparatus according to claim 1. 10. An exposure method in which a mask pattern is exposed and printed on a sample, and the exposure method is characterized by inspecting the sample surface and both the front and back surfaces of the mask for foreign substances immediately before exposure and printing. 11. The exposure method according to claim 10, wherein the foreign matter inspection is performed by inspecting the sample and the mask using a single foreign matter inspection device by changing the amount of light.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63218303A JPH0267715A (en) | 1988-09-02 | 1988-09-02 | Aligner and its exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63218303A JPH0267715A (en) | 1988-09-02 | 1988-09-02 | Aligner and its exposure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0267715A true JPH0267715A (en) | 1990-03-07 |
Family
ID=16717726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63218303A Pending JPH0267715A (en) | 1988-09-02 | 1988-09-02 | Aligner and its exposure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0267715A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009513984A (en) * | 2005-10-31 | 2009-04-02 | ザ・ボーイング・カンパニー | Apparatus and method for inspecting a composite structure for defects |
| JP2010223964A (en) * | 2010-04-26 | 2010-10-07 | Hitachi Ltd | Apparatus and method for defect inspection |
-
1988
- 1988-09-02 JP JP63218303A patent/JPH0267715A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009513984A (en) * | 2005-10-31 | 2009-04-02 | ザ・ボーイング・カンパニー | Apparatus and method for inspecting a composite structure for defects |
| JP2010223964A (en) * | 2010-04-26 | 2010-10-07 | Hitachi Ltd | Apparatus and method for defect inspection |
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