JPH0263167A - Image sensor - Google Patents
Image sensorInfo
- Publication number
- JPH0263167A JPH0263167A JP63214452A JP21445288A JPH0263167A JP H0263167 A JPH0263167 A JP H0263167A JP 63214452 A JP63214452 A JP 63214452A JP 21445288 A JP21445288 A JP 21445288A JP H0263167 A JPH0263167 A JP H0263167A
- Authority
- JP
- Japan
- Prior art keywords
- image sensor
- sensor element
- line sensor
- insulator substrate
- polymer material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000000853 adhesive Substances 0.000 claims abstract description 14
- 230000001070 adhesive effect Effects 0.000 claims abstract description 14
- 239000012298 atmosphere Substances 0.000 claims abstract description 7
- 239000004020 conductor Substances 0.000 claims abstract description 5
- 239000002861 polymer material Substances 0.000 claims description 21
- 229920000620 organic polymer Polymers 0.000 claims description 16
- 229920013730 reactive polymer Polymers 0.000 claims description 4
- 239000002985 plastic film Substances 0.000 claims description 3
- 229920006255 plastic film Polymers 0.000 claims description 3
- 239000012790 adhesive layer Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 20
- 239000012212 insulator Substances 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 3
- 239000004593 Epoxy Substances 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000005350 fused silica glass Substances 0.000 abstract 1
- 229920006267 polyester film Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000001723 curing Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 8
- 230000035882 stress Effects 0.000 description 7
- 239000004925 Acrylic resin Substances 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 238000013008 moisture curing Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- QIVUCLWGARAQIO-OLIXTKCUSA-N (3s)-n-[(3s,5s,6r)-6-methyl-2-oxo-1-(2,2,2-trifluoroethyl)-5-(2,3,6-trifluorophenyl)piperidin-3-yl]-2-oxospiro[1h-pyrrolo[2,3-b]pyridine-3,6'-5,7-dihydrocyclopenta[b]pyridine]-3'-carboxamide Chemical compound C1([C@H]2[C@H](N(C(=O)[C@@H](NC(=O)C=3C=C4C[C@]5(CC4=NC=3)C3=CC=CN=C3NC5=O)C2)CC(F)(F)F)C)=C(F)C=CC(F)=C1F QIVUCLWGARAQIO-OLIXTKCUSA-N 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- 238000012644 addition polymerization Methods 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000005340 laminated glass Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- AYOOGWWGECJQPI-NSHDSACASA-N n-[(1s)-1-(5-fluoropyrimidin-2-yl)ethyl]-3-(3-propan-2-yloxy-1h-pyrazol-5-yl)imidazo[4,5-b]pyridin-5-amine Chemical compound N1C(OC(C)C)=CC(N2C3=NC(N[C@@H](C)C=4N=CC(F)=CN=4)=CC=C3N=C2)=N1 AYOOGWWGECJQPI-NSHDSACASA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- KMIOJWCYOHBUJS-HAKPAVFJSA-N vorolanib Chemical compound C1N(C(=O)N(C)C)CC[C@@H]1NC(=O)C1=C(C)NC(\C=C/2C3=CC(F)=CC=C3NC\2=O)=C1C KMIOJWCYOHBUJS-HAKPAVFJSA-N 0.000 description 1
Landscapes
- Facsimile Heads (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はイメージセンサの構成に関する。さらにくわし
くは、２個以上の複数のイメージセンサ素子をつないで
用いるタイプのイメージセンサに関する。なお本明細書
では、発明の効果がもつとも大きく期待できるリニアイ
メージセンサ若しくはラインセンサを例に取り上げて記
述する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of an image sensor. More specifically, the present invention relates to an image sensor that uses two or more image sensor elements connected together. In this specification, a linear image sensor or a line sensor, which is expected to have great effects of the invention, will be taken as an example and described.
イメージセンサ素子の構成は第２図に示したように、−
ａ的にはガラス質（石英ガラス、ホウケイ酸ガラスなど
）の基板（１０）のいずれか一方の表面に受光素子（１
１）が形成されている。この受光素子への光の入り方に
よって２種類の方式が考えられている。すなわち、第３
図に示したように直接受光素子（１１）に光が入る方式
（以下、トップタイプと記す）及び第４図に示したよう
に、光が基板材質（１０）を通過して受光素子（１１）
に入る方式（以下、ボトムタイプと記す）である。The configuration of the image sensor element is as shown in FIG.
In terms of a, a light-receiving element (1
1) is formed. Two types of methods have been considered depending on how light enters the light receiving element. That is, the third
As shown in the figure, light enters the light receiving element (11) directly (hereinafter referred to as top type), and as shown in Figure 4, light passes through the substrate material (10) and enters the light receiving element (11). )
This is the bottom type (hereinafter referred to as the bottom type).
しかし、トップタイプにおいては素子及び接続部の保護
のために、平面性の良いガラス性のフタを封着する必要
があり、耐湿信頼性、コスト、作業性の面などで不利で
ある。したがって、本発明では、においては、ボトムタ
イプを取り上げる。However, in the top type, it is necessary to seal a glass lid with good flatness to protect the elements and connection parts, which is disadvantageous in terms of moisture resistance, cost, workability, etc. Therefore, the present invention deals with the bottom type.
従来のイメージセンサの主な構造は、第５図に示したよ
うに、導体パターン（１２）が設けられた入射光を透過
できる透明な絶縁物基板（１３）の表面に複数のイメー
ジセンサ素子（１４）が−種または二種以上の接着剤（
１５）によって固定され、イメージセンサ素子のつなぎ
部の界面も上記の接着剤で充填されており、アルミニウ
ムまたは金のワイヤー（１６）でイメージセンサと基板
が接続されている。さらに、このイメージセンサ素子及
びワイヤーの保護のために様々な有機高分子材料（１７
）が素子表面及びワイヤーにボッティングされている。As shown in FIG. 5, the main structure of a conventional image sensor is that a plurality of image sensor elements ( 14) - species or two or more adhesives (
15), the interface of the connecting portion of the image sensor element is also filled with the above adhesive, and the image sensor and the substrate are connected with an aluminum or gold wire (16). Furthermore, various organic polymer materials (17
) are botted on the element surface and wire.
（この際、有機高分子材料は初期的に液状であることが
ほとんどであるため、ポツティング時の流れ出し防止の
ために、ダムとなる構造物（１８）を基板上に設けてお
く必要がある）〔発明が解決しようとする課題〕
しかし、従来技術においては、以下に記すような問題点
が認められる。(At this time, since most organic polymer materials are initially in a liquid state, it is necessary to provide a dam structure (18) on the substrate to prevent it from flowing out during potting.) [Problems to be Solved by the Invention] However, the following problems are recognized in the prior art.
（１）絶縁物基板の材質が制約される
・入射光の透過率
・膨張係数、ヤング率：イメージセンサ素子基板との釣
り合い（応力発生防止）
（２）接着剤の要求特性が厳しい
・熱応力の緩和が必要
・接着信頼性
・屈折率：複数の素子を連続的に並べて使用するため、
それぞれの隣接界面の光学的連続性の確保が必要
（３）イメージセンサ駆動回路、プリアンプ回路が別に
必要になる。(1) The material of the insulating substrate is restricted - Transmittance of incident light, coefficient of expansion, Young's modulus: balance with the image sensor element substrate (prevention of stress generation) (2) Strict required characteristics of adhesive - Thermal stress・Adhesion reliability ・Refractive index: Since multiple elements are used in series,
It is necessary to ensure optical continuity of each adjacent interface. (3) An image sensor drive circuit and a preamplifier circuit are separately required.
・透明な絶縁基板上への素子実装が困難（４）モールド
流れ防止用のダムとなる構造物及びその形成工程が必要
になる。- Difficulty mounting elements on transparent insulating substrates (4) Requires a structure that serves as a dam to prevent mold flow and a process for forming it.
本発明は、この様な問題点を解決するもので、その目的
とするところは、
■構成部品が少なく、アッセンブル工程が簡略化できる
■構造が単純で、薄型化できる
■絶縁物基板等の使用材料の自由度が大きい■センサ素
子（特に隣接界面）にかかる応力が小さくできる（特に
高温にさらされた場合）■接続点が１か所であるため信
頼性向上というようなイメージセンサを提供することに
ある。The present invention is intended to solve these problems, and its objectives are: ■ Fewer components and simplified assembly process ■ Simple structure and thinner structure ■ Use of insulating substrates, etc. Provides an image sensor that has a large degree of freedom in materials ■ Reduces the stress applied to the sensor element (especially adjacent interfaces) (especially when exposed to high temperatures) ■ Improves reliability because there is only one connection point There is a particular thing.
本発明のイメージセンサは、片面に粘着剤層を有するプ
ラスチックフィルムの粘着面に、導体パターンおよびイ
メージセンサ素子を取り囲める大きさの穴を有する絶縁
物基板と、当該穴の中に連続性を持った２個以上のイメ
ージセンサ素子が固定され、この両者が電気的に接続さ
れ、イメージセンサ素子及びそれらの隣接界面ならびに
電気的接続部が有機高分子材料でおおわれている構造を
持つことを特徴とし、かつ上記の有機高分子材料として
反応性高分子材料が用いられ、その硬化時の雰囲気を４
０″Ｃ以上の温度にすることを特徴とする。The image sensor of the present invention includes an insulating substrate having a hole large enough to surround a conductive pattern and an image sensor element on the adhesive side of a plastic film having an adhesive layer on one side, and a conductive pattern and an insulating substrate having a hole large enough to surround an image sensor element, and having continuity in the hole. It has a structure in which two or more image sensor elements are fixed, both are electrically connected, and the image sensor elements, their adjacent interfaces, and electrical connection parts are covered with an organic polymer material. , and a reactive polymer material is used as the organic polymer material, and the atmosphere during curing is set to 4.
It is characterized by a temperature of 0″C or higher.
ここで、有機高分子材料が反応性高分子材料で、その硬
化時の雰囲気が４０℃以上の温度でなくてはならないの
は、以下の理由による。すなわち、本発明のイメージセ
ンサに用いられる材料の組み合わせは自由度が高いこと
を述べたが、熱膨張係数が大きな材料を用いた場合、６
０〜７０℃程度の高温時においてイメージセンサ素子が
外から引っ張られ、それらの隣接界面に極めて大きな引
っ張り応力が働くことになる。そこで応力に耐えられる
ためには隣接界面で強固な接着性が要求される、従って
隣接界面に存在する有機高分子材料は反応性高分子材料
である必要がある。また、上記の材料の硬化雰囲気が４
０ ’Ｃより高い場合、その雰囲気温度において相対的
に膨張した状態で硬化が進むので、上記高温時での引っ
張り応力が緩和されやすく、その温度以下では隣接界面
に圧縮応力が働くため界面が安定する方向になる。The reason why the organic polymer material is a reactive polymer material and the atmosphere during curing must be at a temperature of 40° C. or higher is as follows. In other words, although it has been stated that the combination of materials used in the image sensor of the present invention has a high degree of freedom, when a material with a large coefficient of thermal expansion is used,
At high temperatures of about 0 to 70° C., the image sensor element is pulled from the outside, and extremely large tensile stress acts on the adjacent interfaces. Therefore, in order to withstand stress, strong adhesion is required at the adjacent interface, and therefore the organic polymeric material present at the adjacent interface needs to be a reactive polymeric material. In addition, the curing atmosphere of the above materials is 4
If the temperature is higher than 0'C, curing will proceed in a relatively expanded state at that ambient temperature, so the tensile stress at the above-mentioned high temperature will be easily relaxed, and below that temperature, compressive stress will act on the adjacent interface, making the interface stable. The direction is to do so.
なお本発明で用いられる絶縁物基板は有機、無機を問わ
ず選択できるが、穴加工等の面を考慮すると有機物の方
がより望ましく、半田付けなどの加熱工程を考慮して耐
熱性の良いもの（ガラエボ、超エンプラ等）を選定する
必要がある。絶縁物基板に設けられる穴の形状は、特許
請求の範囲に述べられた要件さえ満たしていれば、特に
制約はない。また、本発明で用いられるプラスチックフ
ィルム材料およびそれが有する接着剤若しくは粘着剤、
さらにこのイメージセンサおよび電気的接続部をおおう
有機高分子材料の材質は、特許請求の範囲で述べられた
反応性高分子材料で光学的な特性（光線透過率等）、物
理的特性（耐熱性、熱膨張係数、ヤング率等）、耐候性
、耐蝕性等が、適用されるイメージセンサの仕様を満た
せるものであればその種類、組み合わせに制約を受けな
い。Note that the insulating substrate used in the present invention can be selected from either organic or inorganic materials, but organic materials are more desirable in consideration of aspects such as hole processing, and materials with good heat resistance in consideration of heating processes such as soldering. (Gara Evo, super engineering plastics, etc.) must be selected. There are no particular restrictions on the shape of the hole provided in the insulating substrate as long as it satisfies the requirements stated in the claims. In addition, the plastic film material used in the present invention and the adhesive or pressure-sensitive adhesive it has,
Furthermore, the material of the organic polymer material covering this image sensor and the electrical connection part is a reactive polymer material described in the claims, and has optical properties (light transmittance, etc.), physical properties (heat resistance, etc.). , thermal expansion coefficient, Young's modulus, etc.), weather resistance, corrosion resistance, etc., as long as they satisfy the specifications of the image sensor to be applied, there are no restrictions on the type or combination.
上記の有機高分子材料の硬化方法は、雰囲気を４０℃以
上にすることができれば、熱硬化、紫外線硬化、湿気硬
化など周知の方法あるいはそれらの組み合わせのいずれ
でも良い。The method for curing the organic polymer material described above may be any known method such as heat curing, ultraviolet curing, moisture curing, or a combination thereof, as long as the atmosphere can be maintained at 40° C. or higher.
以下、実施例にしたがって本発明をさらに詳しく説明す
る。Hereinafter, the present invention will be explained in more detail according to Examples.
〔実施例−１〕
本発明を、２本のセンサチップをつないだ大型のボトム
タイプのラインセンサに用いた。[Example 1] The present invention was used in a large bottom type line sensor in which two sensor chips were connected.
その構造は第１図（ａ）および（ｂ）に示したようなも
のである。すなわち、絶縁物基板（１）としてガラスエ
ポキシ積層板を用い、その表面に導体パターン（４）お
よび、石英製のラインセンサ素子（２）を取り囲める大
きさの穴（３）を設けた。絶縁物基板およびラインセン
サ素子の固定用の材料として表面にシリコーン系の粘着
剤（５）が塗布されたポリエステル系（ＰＥＴ＝ポリエ
チレンテレフタレート）のフィルム（６）を用い、この
表面に２本のラインセンサ素子（２）を紫外線硬化型の
接着剤を塗布した石英ガラス棒（９）で１本につなぎあ
わせたラインセンサ用素子および上記の絶縁物基板を粘
着固定した。アルミニウムワイヤー（７）でラインセン
サ素子と絶縁物基板を接続し、導通をとった後、有機高
分子材料（８）として熱硬化付加重合タイプのシリコー
ン樹脂によってラインセンサ素子および接続部の保護を
行った。この際、上記のシリコーン樹脂はつなぎ合わせ
た２本のう、インセンサ素子の隣接空間にも充填され、
硬化条件は、８０ ’０２時間で硬化させた。Its structure is as shown in FIGS. 1(a) and 1(b). That is, a glass epoxy laminate was used as the insulator substrate (1), and a conductor pattern (4) and a hole (3) large enough to surround the quartz line sensor element (2) were provided on its surface. A polyester (PET = polyethylene terephthalate) film (6) whose surface is coated with a silicone adhesive (5) is used as a material for fixing the insulator substrate and the line sensor element, and two lines are formed on this surface. The line sensor element, in which the sensor element (2) was joined together with a quartz glass rod (9) coated with an ultraviolet curing adhesive, and the above insulating substrate were fixed with adhesive. After connecting the line sensor element and the insulating substrate with the aluminum wire (7) and establishing continuity, the line sensor element and the connection part are protected with a thermosetting addition polymerization type silicone resin as the organic polymer material (8). Ta. At this time, the above-mentioned silicone resin is also filled in the two connected cells and the space adjacent to the in-sensor element.
The curing conditions were 80'02 hours.
本実施例によって形成されたラインセンサは、従来のも
のと比較して、
（１）主な部品点数 ：２分の１（４点が２点）（２）
実装工程数 ：２分の１（６が３）（３）サイクルタ
イム：３分の１ （４，５日が１．５日）（４）モジュ
ール厚さ８２分の１（７ｍｍが３．５ｍｍ）というよう
な特徴が上げられ、トータルコスト面で、また製品設計
面で大きなメリットが得られた。The line sensor formed according to this example has the following features compared to the conventional one: (1) Number of main parts: 1/2 (4 points replaced by 2 points) (2)
Number of mounting steps: 1/2 (6 is 3) (3) Cycle time: 1/3 (4 and 5 days are 1.5 days) (4) Module thickness is 1/82 (7 mm is 3.5 mm) ), which provided significant benefits in terms of total cost and product design.
また、高温放置試験（７０″Ｃ）においても１５００時
間以上良好な特性を維持し続けた。In addition, it continued to maintain good characteristics for more than 1,500 hours in a high temperature storage test (70''C).
なお、以下の実施例においても同様のメリットが得られ
た。Note that similar merits were obtained in the following examples as well.
〔実施ｆＮ−２）
本発明を、３本のセンサチップをつないだ大型のボトム
タイプのラインセンサに用いた。その構造は実施例−１
と同様である。絶縁物基板の材料として、三菱瓦斯化学
型のＢＴレジン−ガラス積層板を用い、絶縁物基板およ
びラインセンサ素子の固定は住人スリーエム製の粘着剤
骨のポリイミドテープをもちいた。[Example fN-2] The present invention was used in a large bottom type line sensor in which three sensor chips were connected. The structure is Example-1
It is similar to A BT resin-glass laminate manufactured by Mitsubishi Gas Chemical Co., Ltd. was used as the material for the insulating substrate, and adhesive bone polyimide tape manufactured by Jujutsu 3M was used to fix the insulating substrate and the line sensor element.
〔実施例−３〕
実施例−１において、有機高分子材料として紫外線硬化
型のウレタン変性アクリル樹脂を用いた。[Example 3] In Example 1, an ultraviolet curable urethane-modified acrylic resin was used as the organic polymer material.
硬化の際は、紫外線照射機の雰囲気温度を５０’Ｃｌ：
設定して紫外線照射を行なった。During curing, the ambient temperature of the ultraviolet irradiation machine was set to 50'Cl:
I set it up and irradiated it with ultraviolet light.
〔実施例−４〕
実施例−１において、有機高分子材料として熱硬化型の
アクリル樹脂を用いた。硬化条件は、７０″Ｃ５時間硬
化の後、９０℃２時間硬化の２段階硬化とした。[Example-4] In Example-1, a thermosetting acrylic resin was used as the organic polymer material. The curing conditions were two-step curing: 70″C for 5 hours and then 90°C for 2 hours.
〔実施例−５〕
実施例−１において、絶縁物基板およびラインセンサ素
子の固定用の材料として、表面にエポキシ系の接着剤が
塗布されたポリエーテルサルフォン（ＰＥＳ）フィルム
を用いた。[Example 5] In Example 1, a polyether sulfone (PES) film whose surface was coated with an epoxy adhesive was used as a material for fixing the insulating substrate and the line sensor element.
有機高分子材料として熱硬化併用の紫外線硬化型のウレ
タン変性アクリル樹脂を用い、６０ ’Ｃ雰囲気で紫外
線照射後、２時間かけて硬化を完結させた。An ultraviolet curable urethane-modified acrylic resin that is combined with heat curing was used as the organic polymer material, and curing was completed over 2 hours after irradiation with ultraviolet rays in an atmosphere of 60'C.
〔実施例−６〕
実施例−３において、絶縁物基板およびラインセンサ素
子の固定用の材料として、ここで用いた有機高分子材料
と同一の材料、すなわち紫外線硬化型のウレタン変性ア
クリル樹脂が表面に塗布されたポリエーテルサルフオン
（ＰＥＳ）フィルムを用いた。[Example-6] In Example-3, the same material as the organic polymer material used here, that is, an ultraviolet-curable urethane-modified acrylic resin, was used as the material for fixing the insulator substrate and line sensor element on the surface. A polyether sulfonate (PES) film coated with a polyether sulfonate was used.
〔実施例−７〕
実施例−２に準じたものを、ＣＣＤイメージセンサに適
用した。なお、高分子材料として、湿気硬化型の縮合型
シリコーン材料を用い５０℃９０％１２時間で硬化させ
た。[Example 7] A method similar to Example 2 was applied to a CCD image sensor. A moisture-curing condensation type silicone material was used as the polymer material, and was cured at 50° C. and 90% for 12 hours.
〔実施例−８〕
実施例−２に準じたものを、３本のセンサ素子からなる
大型イメージセンサに適用した。なお、これらのセンサ
素子は機械的にはつながずにロボットによって精度良く
並べた。[Example-8] A device similar to Example-2 was applied to a large-sized image sensor consisting of three sensor elements. Note that these sensor elements were not connected mechanically, but were precisely arranged by a robot.
以上に述べたように、本発明によれば２個以上のイメー
ジセンサ素子を組み合わせて成るイメージセンサにおい
て、
■部品点数の削減によるコストダウン
■実装工程の削減によるコストダウンと納期短縮
■センサ素子への応力緩和（特に高温）及び接続点の減
少による信頼性向上
■使用できる材料の組み合わせの範囲拡大■モジュール
の薄型化可能
■センサ素子の取り個数増加による歩留まり向上および
コストの低下
■製品におけるイメージセンサの空間占有率の削減によ
り、設計の自由度が拡がる
といった効果がもたらされる。As described above, according to the present invention, in an image sensor consisting of a combination of two or more image sensor elements, ■ Cost reduction by reducing the number of parts ■ Cost reduction and shortening of delivery time by reducing the mounting process ■ Sensor elements Improved reliability due to stress relaxation (especially at high temperatures) and fewer connection points ■ Expanded range of usable material combinations ■ Possible to make modules thinner ■ Improved yield and reduced costs by increasing the number of sensor elements ■ Image sensors in products Reducing the space occupancy rate of the system has the effect of increasing the degree of freedom in design.
また、本明細書では、ボトムタイプのリニアイメージセ
ンサおよびラインセンサのみについて説明してきたが、
ボトムタイプのエリアイメージセンサなどの他のボトム
タイプのイメージセンサにも適用可能で、同様な効果も
期待できる。Furthermore, in this specification, only bottom-type linear image sensors and line sensors have been described;
It can also be applied to other bottom-type image sensors such as bottom-type area image sensors, and similar effects can be expected.
（ａ）および平面図（ｂ）である。
１・・・絶縁物基板
２・・・ラインセンサ素子
３・・・穴
４・・・導体パターン
５・・・粘着剤（または、接着剤）
６・・・フィルム
７・・・ワイヤー
８・・・有機高分子材料
９・・・石英ガラス棒
第２図は、ラインセンサ素子の構成の概略を示す斜視図
である。
１０・・・基板
１１・・・受光素子
第３図は、トップタイプ方式の概念を示す断面図である
。
１０・・・基板
１１・・・受光素子
第４図は、ボトムタイプ方式の概念を示す断面図である
。
１０・・・基板
１１・・・受光素子
第５図は、従来のボトムタイプのイメージセンサの構造
を示す断面図である。
１２・・・導体パターン
１３・・・絶縁物基板
１４・・・イメージセンサ素子
１５・・・接着剤
１６・・・ワイヤー
１７・・・有機高分子材料
１８・・・ダムとなる構造物
以上
第
Ｚ
図
繍り
第
図
図面の浄書（内容に変更なしｙ
第
図
（ｂ）
手続補正書
（方式）
％式％
事件の表示
昭和６３年 特許願
第２１４４５２号
２゜
発明の名称
イメージセンサ
３、補正する者
事件との関係 出願人
東京都新宿区西新宿２丁目４番１号
（２３６）セイコーエプソン株式会社
代表取締役 中 村 恒 也
４、代理人
５゜
補正命令の日付
昭和６３年１１月２９日(a) and a plan view (b). 1... Insulator substrate 2... Line sensor element 3... Hole 4... Conductor pattern 5... Adhesive (or adhesive) 6... Film 7... Wire 8... -Organic polymer material 9...quartz glass rod FIG. 2 is a perspective view showing the outline of the configuration of the line sensor element. 10... Substrate 11... Light receiving element FIG. 3 is a sectional view showing the concept of the top type system. 10... Substrate 11... Light receiving element FIG. 4 is a sectional view showing the concept of the bottom type system. 10... Substrate 11... Light receiving element FIG. 5 is a sectional view showing the structure of a conventional bottom type image sensor. 12...Conductor pattern 13...Insulator substrate 14...Image sensor element 15...Adhesive 16...Wire 17...Organic polymer material 18...Dam structure Z Embroidery diagram Engraving of the drawing (no change in content y Figure (b) Procedural amendment (method) % formula % Indication of the case 1985 Patent application No. 214452 2゜ Title of the invention Image sensor 3, amendment Applicant: 2-4-1 Nishi-Shinjuku, Shinjuku-ku, Tokyo (236) Representative Director of Seiko Epson Corporation Tsuneya Nakamura 4, Agent 5゜Date of amendment order: November 29, 1988
Claims (2)
粘着面に、導体パターンおよびイメージセンサ素子を取
り囲める大きさの穴を有する絶縁物基板と、当該穴の中
に連続性を持った２個以上のイメージセンサ素子が固定
され、この両者が電気的に接続され、イメージセンサ素
子及びそれらの隣接界面ならびに電気的接続部が有機高
分子材料でおおわれている構造を持つことを特徴とする
イメージセンサ。(1) An insulating substrate that has a hole large enough to surround a conductor pattern and an image sensor element on the adhesive side of a plastic film that has an adhesive layer on one side, and two or more holes that are continuous in the hole. An image sensor having a structure in which an image sensor element is fixed, the two are electrically connected, and the image sensor element, their adjacent interface, and the electrical connection part are covered with an organic polymer material.
用いられ、その硬化時の雰囲気を４０℃以上の温度にす
ることを特徴とする特許請求の範囲第１項記載のイメー
ジセンサ。(2) The image sensor according to claim 1, wherein a reactive polymer material is used as the organic polymer material, and the atmosphere during curing is set to a temperature of 40° C. or higher.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63214452A JPH0263167A (en) | 1988-08-29 | 1988-08-29 | Image sensor |
| DE89114371T DE68911420T2 (en) | 1988-08-18 | 1989-08-03 | Solid state imaging device. |
| EP89114371A EP0355522B1 (en) | 1988-08-18 | 1989-08-03 | Solid state image pickup device |
| US07/393,729 US5068713A (en) | 1988-08-18 | 1989-08-15 | Solid state image sensing device |
| HK106497A HK106497A (en) | 1988-08-18 | 1997-06-26 | Solid state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63214452A JPH0263167A (en) | 1988-08-29 | 1988-08-29 | Image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0263167A true JPH0263167A (en) | 1990-03-02 |
Family
ID=16655991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63214452A Pending JPH0263167A (en) | 1988-08-18 | 1988-08-29 | Image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0263167A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5319160A (en) * | 1990-12-14 | 1994-06-07 | Nambu Electric Co., Ltd. | Apparatus for collecting an article |
-
1988
- 1988-08-29 JP JP63214452A patent/JPH0263167A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5319160A (en) * | 1990-12-14 | 1994-06-07 | Nambu Electric Co., Ltd. | Apparatus for collecting an article |
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