JPH0261078A - Parallel flat plate type plasma etching device - Google Patents
Parallel flat plate type plasma etching deviceInfo
- Publication number
- JPH0261078A JPH0261078A JP63211237A JP21123788A JPH0261078A JP H0261078 A JPH0261078 A JP H0261078A JP 63211237 A JP63211237 A JP 63211237A JP 21123788 A JP21123788 A JP 21123788A JP H0261078 A JPH0261078 A JP H0261078A
- Authority
- JP
- Japan
- Prior art keywords
- plasma etching
- plate type
- upper electrode
- type plasma
- flat plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001020 plasma etching Methods 0.000 title claims abstract description 15
- 238000007664 blowing Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 239000003566 sealing material Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 26
- 239000012495 reaction gas Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Air Transport Of Granular Materials (AREA)
- Nozzles (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は平行平板型プラズマエツチング装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a parallel plate type plasma etching apparatus.
従来、この種の平行平板型プラズマエツチング装置は第
3図に示すように、チャンバー1内にガス導入管9に接
続された上部電極2と、試料としての半導体基板7を保
持する下部電極3とを有する構造になっており、上部電
極2に設けられたガス吹き出し六6より反応ガスを吹き
出すように構成されていた。Conventionally, this type of parallel plate type plasma etching apparatus has, as shown in FIG. 3, an upper electrode 2 connected to a gas introduction pipe 9 in a chamber 1, and a lower electrode 3 holding a semiconductor substrate 7 as a sample. The reaction gas was blown out from a gas blowout 66 provided on the upper electrode 2.
上述した従来の平行平板型プラズマエツチング装置にお
いては、ガス吹き出し六6が上部電極3に直接設けられ
ているため、穴の位置や穴の数を容易に変更できない構
造となっている。このため、ガス吹き出し穴6の位置や
数の違いによる最適なエツチング条件を見付けるために
は、穴の位置や数が違うガス吹き出し穴をもつ上部電極
を交換しなければならないため、作業性や装置の稼働率
が低下するという欠点があった。In the above-mentioned conventional parallel plate type plasma etching apparatus, since the gas blowing device 66 is provided directly on the upper electrode 3, the structure is such that the position of the holes and the number of holes cannot be easily changed. Therefore, in order to find the optimal etching conditions due to the difference in the position and number of gas blow-off holes 6, it is necessary to replace the upper electrode with gas blow-off holes in different positions and numbers, which reduces workability and equipment. The disadvantage was that the operating rate of the system decreased.
本発明の平行平板型プラズマエツチング装置は、チャン
バー内に設けられ、ガス導入管に接続する上部電極と、
試料を保持する下部電極とを有する平行平板型プラズマ
エツチング装置であって、前記上部電極に、複数のガス
吹き出し穴を有するとりはずし可能なガス吹き出しユニ
ットを収り付けたものである。The parallel plate plasma etching apparatus of the present invention includes an upper electrode provided in a chamber and connected to a gas introduction pipe;
This is a parallel plate type plasma etching apparatus having a lower electrode for holding a sample, and a removable gas blowing unit having a plurality of gas blowing holes is housed in the upper electrode.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は本発明の第1の実施例の断面図である。FIG. 1 is a sectional view of a first embodiment of the invention.
第1図において、平行平板型プラズマエツチング装置は
、チャンバー1内に設けられ、ガス導入管9に接続する
上部電極2と、半導体基板7を支持する下部電極3とか
ら主に構成されている。そして特に上部電極2には、ガ
ス吹き出し六6の位置や数や向きが異なるガス吹き出し
ユニット4がシール材5をはさみ、ねじ込み式により固
定されている。In FIG. 1, a parallel plate type plasma etching apparatus is provided in a chamber 1 and mainly consists of an upper electrode 2 connected to a gas introduction pipe 9 and a lower electrode 3 supporting a semiconductor substrate 7. Particularly, to the upper electrode 2, a gas blowing unit 4 having gas blowing units 4 in different positions, numbers, and directions is screwed and fixed with a sealing material 5 sandwiched therebetween.
このように構成された第1の実施例によれば、ガス吹き
出しユニット4を容易に取り変えることができるので、
ガス吹き出し穴6の位置や数等の違いによるエツチング
状態の変化を容易に知ることができるので、fk適なエ
ツチング条件を容易に求めることができる。従って作業
性や装置の稼働率を向上させることができる。According to the first embodiment configured in this way, the gas blowing unit 4 can be easily replaced.
Since changes in the etching state due to differences in the position, number, etc. of the gas blowing holes 6 can be easily known, it is possible to easily determine etching conditions suitable for fk. Therefore, workability and device availability can be improved.
第2図は本発明の第2の実施例の断面図である。FIG. 2 is a sectional view of a second embodiment of the invention.
チャンバー1内に供給される反応ガスは、上部電極2の
内部を通ってガス吹き出しユニット4を通り、半導体基
板7上にガス吹き出し穴の位置や数や向きが異なるタイ
プが用意されており、j」定して上部電極2に取付ける
ことができる構造となっている。The reaction gas supplied into the chamber 1 passes through the inside of the upper electrode 2, passes through the gas blowing unit 4, and is placed on the semiconductor substrate 7. Types with different positions, numbers, and orientations of gas blowing holes are prepared. It has a structure that allows it to be attached to the upper electrode 2 at a certain angle.
この第2の実施例では、反応ガ°スをガス吹き出しユニ
ット4のガス導入口8より取り入れ、ガス吹き出し六6
より吹きだすようにしであるので、半導体基板7上のガ
スの分布をより均一にでき、上部電極2上の位置の差に
よるガスの分布の片寄りをなくすことができるという利
点がある。In this second embodiment, the reaction gas is taken in from the gas inlet 8 of the gas blowing unit 4, and
Since the gas is blown out more uniformly, the gas distribution on the semiconductor substrate 7 can be made more uniform, and there is an advantage that the unevenness of the gas distribution due to the difference in the position on the upper electrode 2 can be eliminated.
以上説明したように本発明は、平行平板型プラズマエツ
チング装置の上部電極に、複数のガス吹き出し穴を有す
る、とりはずし可能なガス吹き出しユニットを取f寸け
ることにより、最適なエツチング条件を容易に見付ける
ことができる。従って作業性及び装置の稼働率を向上さ
せることができる。As explained above, the present invention enables easy finding of optimal etching conditions by installing a removable gas blowing unit having a plurality of gas blowing holes in the upper electrode of a parallel plate type plasma etching apparatus. be able to. Therefore, workability and device availability can be improved.
第1図及び第2図は本発明の第1及び第2の実施例の断
面図、第3図は従来の平行平板型プラズマエツチング装
置の断面図である。
1・・・チャンバー、2・・・上部電極、3・・・下部
電極、4・・・ガス吹き出しユニット、5・・・シール
材、6・・・ガス吹き出し穴、7・・・半導体基板、8
・・・ガス導入口、9・・・ガス導入管。1 and 2 are cross-sectional views of first and second embodiments of the present invention, and FIG. 3 is a cross-sectional view of a conventional parallel plate type plasma etching apparatus. DESCRIPTION OF SYMBOLS 1... Chamber, 2... Upper electrode, 3... Lower electrode, 4... Gas blowing unit, 5... Seal material, 6... Gas blowing hole, 7... Semiconductor substrate, 8
...Gas inlet, 9...Gas inlet pipe.
Claims (1)
と、試料を保持する下部電極とを有する平行平板型プラ
ズマエッチング装置において、前記上部電極に、複数の
ガス吹き出し穴を有するとりはずし可能なガス吹き出し
ユニットを取り付けたことを特徴とする平行平板型プラ
ズマエッチング装置。A removable gas blowing unit having a plurality of gas blowing holes in the upper electrode in a parallel plate plasma etching apparatus having an upper electrode provided in a chamber and connected to a gas introduction pipe, and a lower electrode holding a sample. A parallel plate type plasma etching apparatus characterized by being equipped with a.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63211237A JPH0261078A (en) | 1988-08-24 | 1988-08-24 | Parallel flat plate type plasma etching device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63211237A JPH0261078A (en) | 1988-08-24 | 1988-08-24 | Parallel flat plate type plasma etching device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0261078A true JPH0261078A (en) | 1990-03-01 |
Family
ID=16602557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63211237A Pending JPH0261078A (en) | 1988-08-24 | 1988-08-24 | Parallel flat plate type plasma etching device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0261078A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5643394A (en) * | 1994-09-16 | 1997-07-01 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
WO1998046808A1 (en) | 1997-04-11 | 1998-10-22 | Tokyo Electron Limited | Processor |
FR2808224A1 (en) * | 2000-04-26 | 2001-11-02 | Unaxis Balzers Ag | HF PLASMA REACTOR |
JP2008524852A (en) * | 2004-12-17 | 2008-07-10 | アプライド マテリアルズ インコーポレイテッド | Self-cooled gas distributor in high vacuum for high density plasma applications |
KR20140008090A (en) * | 2012-07-10 | 2014-01-21 | 주성엔지니어링(주) | Chemical vapor deposition apparatus |
JP2014120764A (en) * | 2012-12-17 | 2014-06-30 | Gloval Material Science Co Ltd | Upper electrode of dry etching reaction chamber and manufacturing method therefor |
CN104810238A (en) * | 2014-01-23 | 2015-07-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas homogenizing structure and plasma system |
-
1988
- 1988-08-24 JP JP63211237A patent/JPH0261078A/en active Pending
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5643394A (en) * | 1994-09-16 | 1997-07-01 | Applied Materials, Inc. | Gas injection slit nozzle for a plasma process reactor |
USRE39939E1 (en) | 1997-04-11 | 2007-12-18 | Tokyo Electron Limited | Processing system |
US6334983B1 (en) | 1997-04-11 | 2002-01-01 | Tokyo Electron Limited | Processing system |
KR100469047B1 (en) * | 1997-04-11 | 2005-01-31 | 동경 엘렉트론 주식회사 | Processing System, Upper Electrode Unit and Method of Use of an Upper Electrode, and Electrode Unit and Method of Manufacturing the Electrode unit |
WO1998046808A1 (en) | 1997-04-11 | 1998-10-22 | Tokyo Electron Limited | Processor |
USRE39969E1 (en) | 1997-04-11 | 2008-01-01 | Tokyo Electron Limited | Processing system |
USRE40046E1 (en) | 1997-04-11 | 2008-02-12 | Tokyo Electron Limited | Processing system |
FR2808224A1 (en) * | 2000-04-26 | 2001-11-02 | Unaxis Balzers Ag | HF PLASMA REACTOR |
US7306829B2 (en) | 2000-04-26 | 2007-12-11 | Unaxis Balzers Aktiengesellschaft | RF plasma reactor having a distribution chamber with at least one grid |
US9045828B2 (en) | 2000-04-26 | 2015-06-02 | Tel Solar Ag | RF plasma reactor having a distribution chamber with at least one grid |
JP2008524852A (en) * | 2004-12-17 | 2008-07-10 | アプライド マテリアルズ インコーポレイテッド | Self-cooled gas distributor in high vacuum for high density plasma applications |
KR20140008090A (en) * | 2012-07-10 | 2014-01-21 | 주성엔지니어링(주) | Chemical vapor deposition apparatus |
JP2014120764A (en) * | 2012-12-17 | 2014-06-30 | Gloval Material Science Co Ltd | Upper electrode of dry etching reaction chamber and manufacturing method therefor |
CN104810238A (en) * | 2014-01-23 | 2015-07-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas homogenizing structure and plasma system |
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