JPH0258284A - Manufacture of diffraction grating - Google Patents
Manufacture of diffraction gratingInfo
- Publication number
- JPH0258284A JPH0258284A JP63208197A JP20819788A JPH0258284A JP H0258284 A JPH0258284 A JP H0258284A JP 63208197 A JP63208197 A JP 63208197A JP 20819788 A JP20819788 A JP 20819788A JP H0258284 A JPH0258284 A JP H0258284A
- Authority
- JP
- Japan
- Prior art keywords
- grating
- substrate
- diffraction grating
- transferred
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000011347 resin Substances 0.000 claims abstract description 14
- 229920005989 resin Polymers 0.000 claims abstract description 14
- 230000001427 coherent effect Effects 0.000 claims abstract description 8
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 16
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 238000010586 diagram Methods 0.000 description 6
- 238000005305 interferometry Methods 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 206010041662 Splinter Diseases 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005323 electroforming Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Optical Integrated Circuits (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、回折格子、特に分布帰還（Ｄ Ｆ Ｂ：
Ｄｉｓｔｒｉｂｕｔｅｄ Ｆｅｅｄ Ｂａｃｋ 、以下
ＤＦＢと略記する）形半導体レーザ、λ／４シフトＤＦ
Ｂレーザに用いられる回折格子の製造方法に関する。[Detailed Description of the Invention] [Industrial Application Field] This invention relates to a diffraction grating, particularly a distributed feedback (DFB:
Distributed Feed Back (hereinafter abbreviated as DFB) type semiconductor laser, λ/4 shift DF
The present invention relates to a method of manufacturing a diffraction grating used in a B laser.
高速、大容量な光ケーブル通信用の光源として、ＤＦＢ
形半導体レーザ、λ／４シフトＤＦＢレーザの開発が進
められている。これらのレーザは、高速変調時にも単一
軸モード発振することから、シングルモードファイバと
組み合わせることにより、光ケーブル通信のもつ高速、
大容量性を実現できる。DFB as a light source for high-speed, large-capacity optical cable communication
Development of a type semiconductor laser and a λ/4 shift DFB laser is progressing. Since these lasers oscillate in a single axis mode even during high-speed modulation, they can be combined with single-mode fibers to achieve the high-speed,
Large capacity can be achieved.
通常の半導体レーザは、共振器として、活性層の両端を
襞間し両方の襞間面でファプリベロー共振器を構成して
いる。活性層内の光は襞間面で反射され、活性層内を往
復しレーザ発振に到達する。In a normal semiconductor laser, both ends of an active layer are formed into folds as a resonator, and the planes between both folds form a Fabry Bellows resonator. Light within the active layer is reflected by the inter-fold surfaces, travels back and forth within the active layer, and reaches laser oscillation.
一方ＤＦＢレーザの場合は、活性層の近傍に回折格子を
配置し、回折格子のブラッグ反射を利用して共振器を構
成している。活性層内の光は回折格子のブラッグ反射に
より徐々に反射されることにより活性層内を往復しレー
ザ発振に到達する。On the other hand, in the case of a DFB laser, a diffraction grating is placed near the active layer, and a resonator is constructed using Bragg reflection of the diffraction grating. The light within the active layer is gradually reflected by the Bragg reflection of the diffraction grating, travels back and forth within the active layer, and reaches laser oscillation.
ＤＦＢレーザに用いられる回折格子のピッチｐと発振波
長λとの間には次のような関係がある。There is the following relationship between the pitch p of a diffraction grating used in a DFB laser and the oscillation wavelength λ.
λ λ。λ λ.
ここで、ｍは回折格子の次数、λは発振波長、ｎｏは素
子内の等価屈折率、λ、は素子内を伝播する光の波長で
ある。回折格子の次数ｍは、通常、Ｉまたは２のものが
用いられる。次数が低いほど、格子ピッチは小さくなる
ので回折格子の製作が困難になるが、光波と回折格子の
結合係数が大きくなるので望ましい。格子ピッチについ
て一例を上げると、ＩｎＰを用いた１、３μｍ帯のＤＦ
Ｂレーザでは、１次の回折格子の場合、約０．２μｍと
なる。従って、格子の凹凸はそれぞれ０．１μｍ幅にな
る。Here, m is the order of the diffraction grating, λ is the oscillation wavelength, no is the equivalent refractive index within the element, and λ is the wavelength of light propagating within the element. The order m of the diffraction grating is usually I or 2. The lower the order, the smaller the grating pitch, making it more difficult to manufacture the diffraction grating, but it is desirable because the coupling coefficient between the light wave and the diffraction grating becomes larger. To give an example of the grating pitch, DF in the 1 and 3 μm band using InP
In the case of a B laser, it is approximately 0.2 μm for a first-order diffraction grating. Therefore, each of the concave and convex portions of the grating has a width of 0.1 μm.
このようなサブミクロンピッチの格子を精度よく作成す
る方法として、レーザビームの２光束干渉法がある。第
２図はこの方法を説明するための図である。レーザ発振
器１から出た光はミラー７により反射されビームスプリ
ンタ２により２つに分離され、ビームエクスパンダ３．
４により拡大され、ミラー５，６により反射されて、基
板８上で２つの光束が重ね合わされ干渉し、基板上のフ
ォトレジスト９を露光する。ここで、基板８に入射する
光束の角度を適当に設定することにより、任意のピッチ
を持つフォトレジスト格子の作成が可能である。この方
法では、用いるレーザビームの波長のおよそ１／２程度
までのピッチを持つ格子を精度よく作成することができ
る。作成されたフォトレジスト格子をマスクとして基板
である半導体をエツチングすることによりＤＦＢレーザ
用の回折格子が得られる。A two-beam interferometry method using a laser beam is known as a method for creating such gratings with a submicron pitch with high precision. FIG. 2 is a diagram for explaining this method. The light emitted from the laser oscillator 1 is reflected by a mirror 7, separated into two by a beam splitter 2, and then sent to a beam expander 3.
4 and reflected by mirrors 5 and 6, the two light beams overlap and interfere on the substrate 8, exposing the photoresist 9 on the substrate. Here, by appropriately setting the angle of the light beam incident on the substrate 8, it is possible to create a photoresist grating with an arbitrary pitch. With this method, a grating having a pitch up to about 1/2 of the wavelength of the laser beam used can be created with high precision. A diffraction grating for a DFB laser is obtained by etching the semiconductor substrate using the created photoresist grating as a mask.
λ／４シフトＤＦＢレーザは、通常のＤＦＢレーザより
もさらに単一軸モード発振の歩留まりを向上させる目的
で開発されているもので、１次の回折格子を用いた場合
では、レーザ素子の中央付近で回折格子の位相が反転し
ているものである。The λ/4 shift DFB laser has been developed with the aim of further improving the yield of single-axis mode oscillation than normal DFB lasers, and when using a first-order diffraction grating, the λ/4 shift DFB laser The phase of the diffraction grating is inverted.
λ／４シフトＤＦＢレーザ用の回折格子の作成方法には
種々の方法が提案され、実験されているが、基本的には
さきに説明した２光束干渉法を基本とし、光路内に設け
られた位相シフト部を用い、あるいはヱガレジストとポ
ジレジストを使い分けている。第３図は、ネガレジスト
とポジレジストを用いた代表的なλ／４シフトＤＦＢレ
ーザ用回折格子の作成方法を説明するための図で、基板
の断面を示している。なおこの図では説明を簡単にする
だめに２光束干渉露光の光学系部分を省略している。こ
の方法では、基板１０上のネガレジスト１１はレーザビ
ームが照射された部分が現像液に不溶となり、ポジレジ
スト１２では可）容となるために同位相のレーザビーム
を照射した場合、現像／＆に残るレジストの凹凸が各々
反転することを用いている。Various methods have been proposed and experimented with to create diffraction gratings for λ/4-shifted DFB lasers, but basically they are based on the two-beam interferometry method explained earlier. A phase shift section is used, or a negative resist and a positive resist are used. FIG. 3 is a diagram for explaining a typical method of creating a diffraction grating for a λ/4 shift DFB laser using a negative resist and a positive resist, and shows a cross section of the substrate. In this figure, the optical system for two-beam interference exposure is omitted to simplify the explanation. In this method, the part of the negative resist 11 on the substrate 10 that is irradiated with the laser beam becomes insoluble in the developer, whereas the part of the positive resist 12 that is irradiated with the laser beam becomes insoluble in the developer. This method uses the fact that the unevenness of the resist remaining in the image is reversed.
以上述べたＤＦＢレーザ用の回折格子作成方法は基本的
に２光束の干渉を用いているため、干渉計を形成する必
要があり、装置が大型になるという欠点を有していた。Since the above-described method for producing a diffraction grating for a DFB laser basically uses interference of two light beams, it is necessary to form an interferometer, which has the drawback of increasing the size of the apparatus.
更に、サブミクロンの格子を形成するためには、干渉社
内の振動を極力排除する必要があった。またレーザ出射
ビームを２光束に分離するために、片側のビームに対し
て空気のゆらぎがあると格子が形成されないため、干渉
計内の空気の移動を抑制しなければならなかった。Furthermore, in order to form a submicron lattice, it was necessary to eliminate interfering internal vibrations as much as possible. Furthermore, in order to separate the laser emitted beam into two beams, if there is air fluctuation in one beam, a grating will not be formed, so it is necessary to suppress the movement of air within the interferometer.
従って、ＤＦＢレーザの量産に当たっては、干渉計の維
持、制御に多くの工数が必要であった。更に、λ／４シ
フトＤＦＢレーザ用の回折格子作成については、前記問
題点に加えて、複雑なレジストプロセスを必要とし、膨
大な工数と厳重な工程管理が必要とされていた。Therefore, in mass production of DFB lasers, many man-hours are required to maintain and control the interferometer. Furthermore, in addition to the above-mentioned problems, fabrication of a diffraction grating for a λ/4 shift DFB laser requires a complicated resist process, requiring a huge number of man-hours and strict process control.
本発明の目的は上記問題点を解決し、安定で、量産性に
冨み、かつ工数をあまりｌ・要としないＤＦＢレーザ用
、およびλ／４シフトＤＰＢレーザ用の回折格子の製作
方法を提供することにある。The purpose of the present invention is to solve the above-mentioned problems and provide a method for manufacturing diffraction gratings for DFB lasers and λ/4 shift DPB lasers that is stable, easy to mass-produce, and does not require much man-hours. It's about doing.
〔課題を解決するための手段）
本発明の回折格子の製造方法は、
基板上のレジスｌ−層に形成された格子を前記基板に転
写し、格子パターンが転写された前記基板を原盤として
光硬化性樹脂により前記格子パターンの複製を作成し、
この光硬化性樹脂からなる格子パターンを用いてコヒー
レント転写法により格子を作成することを特徴としてい
る。[Means for Solving the Problems] The method for manufacturing a diffraction grating of the present invention includes transferring a grating formed on a resist l-layer on a substrate to the substrate, and using the substrate onto which the grating pattern has been transferred as a master, light is applied. creating a replica of the lattice pattern with a curable resin;
A feature of this method is that a grating is created by a coherent transfer method using a grating pattern made of this photocurable resin.
以下、図面を参照しながら本発明の作用を述べる。本発
明ではレーザ発振器から出射したビームをビームスプリ
ンタで２つに分割することなく回折格子を作成するため
に、コヒーレント転写法を用いる。第４図はコヒーレン
ト転写法を説明するための図である。回折格子１４にレ
ーザビーム１３を照射すると０次回折光とともに、±１
次回折光が生じる。ここで、回折格子１４のプラ・ノブ
角θ６で光を入射させると、＋１次回折光１５と一１次
回折光１６は回折格子１４の法線に対して等しい角度（
ブラッグ角θｌｌ）で出射する。つまり、回折格子の出
射側平面のごく近傍では、回折格子法線に対して等しい
角度で交わる２つの光束による干渉がみられる。従って
、第５図に示すように、この領域内にフォトレジスト１
７を塗布した基板１８を配置すれば、この干渉縞がフォ
トレジストに記録されることになる。以下、この２つの
回折光を発生させるために用いる格子を基本回折格子と
呼ぶことにする。The operation of the present invention will be described below with reference to the drawings. In the present invention, a coherent transfer method is used to create a diffraction grating without dividing the beam emitted from a laser oscillator into two by a beam splinter. FIG. 4 is a diagram for explaining the coherent transfer method. When the laser beam 13 is irradiated onto the diffraction grating 14, along with the 0th order diffracted light, ±1
A second diffracted light is generated. Here, when light is incident on the diffraction grating 14 at a plastic knob angle θ6, the +1st-order diffracted light 15 and the 11st-order diffracted light 16 are at an equal angle (
The light is emitted at a Bragg angle θll). That is, in the very vicinity of the exit side plane of the diffraction grating, interference is observed between two light beams that intersect at equal angles to the normal line of the diffraction grating. Therefore, as shown in FIG.
If the substrate 18 coated with No. 7 is placed, these interference fringes will be recorded on the photoresist. Hereinafter, the grating used to generate these two diffracted lights will be referred to as a basic diffraction grating.
本発明では、通常の２光束干渉法により作成した半導体
基板上の格子のレプリカを作成して基本・回折格子とし
て用いる。これにより、２光束干渉法で回折格子を作成
する場合と同じピッチを持つ回折格子が作成できること
が保証される。In the present invention, a replica of a grating on a semiconductor substrate created by ordinary two-beam interferometry is created and used as a basic diffraction grating. This ensures that a diffraction grating can be created with the same pitch as when creating a diffraction grating using two-beam interferometry.
以下、図面を参照しながら、本発明の実施例について説
明する。Embodiments of the present invention will be described below with reference to the drawings.
第６図は本発明における基本回折格子の製造手順を説明
するためのものである。まず、第６図（ａ）に示すよう
に、２光束干渉法により基板上９上のフォトレジスト層
２０に所望のピッチを持つ格子を作成する。次に、第６
図（ｂ）に示すように、フォトレジストからなる格子を
マスクとして基板１９をエツチングし、格子パターンを
基板１９に転写する。これは、格子パターンを所望の深
さ、形状になるよう整形するために行うものである。次
に、第６図（Ｃ）に示すように、この基板上のパターン
を原盤として、光硬化性樹脂２１によりレプリカを作成
する。この光硬化性樹脂に転写された格子を基本回折格
子として用いる。FIG. 6 is for explaining the manufacturing procedure of the basic diffraction grating in the present invention. First, as shown in FIG. 6(a), a grating having a desired pitch is created on the photoresist layer 20 on the substrate 9 by two-beam interferometry. Next, the sixth
As shown in Figure (b), the substrate 19 is etched using a photoresist grating as a mask, and the grating pattern is transferred onto the substrate 19. This is done in order to shape the grating pattern into a desired depth and shape. Next, as shown in FIG. 6(C), a replica is created using a photocurable resin 21 using the pattern on this substrate as a master. The grating transferred to this photocurable resin is used as a basic diffraction grating.
以上述べた基本回折格子の製作手順において、基板上の
格子パターンの電鋳金型を作成し、この金型を原盤とし
て光硬化性樹脂にパターンを転写することももちろん可
能である。前述の手法では一度光硬化性樹脂によりレプ
リカを作成すると原盤は破壊されてしまうが、電鋳金型
を利用する方法では原盤が保存されているため、レプリ
カの量産、すなわち基本回折格子の安定供給が可能とな
り、従って、回折格子の製造が安定に行えるという利点
を備えている。In the basic diffraction grating manufacturing procedure described above, it is of course possible to create an electroforming mold of the grating pattern on the substrate and use this mold as a master to transfer the pattern to the photocurable resin. In the above-mentioned method, once a replica is created using photocurable resin, the master is destroyed, but in the method using electroforming molds, the master is preserved, making it possible to mass produce replicas, or in other words, to provide a stable supply of basic diffraction gratings. This has the advantage that the diffraction grating can be manufactured stably.
第１図は、本発明におけるコヒーレント露光の光学系を
示すものである。FIG. 1 shows an optical system for coherent exposure in the present invention.
レーザ発振器２２から出射した光は露光時間制御用のシ
ャッタ２３、レーザ光強度調整用のＮＤフィルタ（ｎｅ
ｕｔｒａｌ ｄｅｎｓｉｔｙ ｆｉｌｔｅｒ）２４を通
過し、対物レンズ２５．スペーシャルフィルタ２６．コ
リメートレンズ２７からなるビームエクスパンダ２９に
より拡大され平行光となり、上述の手順により作成され
た基本回折格子３０に入射する。基本回折格子は、入射
平行光がブラッグ角となるよう配置される。The light emitted from the laser oscillator 22 is passed through a shutter 23 for controlling exposure time and an ND filter (ne
utral density filter) 24, and an objective lens 25. Spatial filter 26. The beam is expanded by a beam expander 29 consisting of a collimating lens 27 to become parallel light, which is incident on the basic diffraction grating 30 created by the above-described procedure. The basic diffraction grating is arranged so that the incident parallel light has a Bragg angle.
基本回折格子３０の後方ごく近傍に、フォトレジスト３
１を塗布した半導体レーザ基板３２が基本回折格子３１
と平行になるように配置される。この光学系を用いて、
露光時間、レーザ光強度を適当に調整することにより、
半導体基板上のフォトレジスト層に所望の回折格子を作
成することができる。A photoresist 3 is placed very close to the rear of the basic diffraction grating 30.
The semiconductor laser substrate 32 coated with 1 is the basic diffraction grating 31.
is placed parallel to. Using this optical system,
By appropriately adjusting the exposure time and laser light intensity,
A desired diffraction grating can be created in a photoresist layer on a semiconductor substrate.
本発明によれば、ＤＦＢレーザ、λ／４シフトＤＦＢレ
ーザ用の回折格子を非常に簡単な製作手順で、安定に製
作することができるため、回折格子の製作に要していた
工数が大幅に削減でき、これらのレーザの低価格化に寄
与する。According to the present invention, diffraction gratings for DFB lasers and λ/4 shift DFB lasers can be stably manufactured using a very simple manufacturing procedure, so the man-hours required for manufacturing diffraction gratings can be significantly reduced. This contributes to lowering the cost of these lasers.
また、本発明による回折格子の製造方法は、上述のレー
ザへの応用だけでな〈従来２光束干渉法で作成していた
回折格子の製造へも応用が可能である。Further, the method for manufacturing a diffraction grating according to the present invention can be applied not only to the above-mentioned laser, but also to the manufacture of a diffraction grating that was conventionally manufactured by two-beam interferometry.
第１図、第６図は本発明の詳細な説明するための図、
第２図、第３図は従来の技術を説明するための図、
第４図、第５図は本発明の詳細な説明するための図であ
る。
１．２２・・・・・レーザ発振器
２・・・・・・・ビームスプリンタ
３，４．２９・・・ビームエクスパンダ５．６．７・・
・ミラー
８、１０．１８．１９・・・基板
９、１７．３１・・・フォトレジスト
１１・・・・・・・ネガレジスト
１２・・・・・・・ポジレジスト
１３・・・・・・・レーザビーム
１４・・・・・・・回折格子
１５・・・・・・・＋１次回折格子
１６・・・・・・・−１次回折格子
２Ｄ・・・・・・・フォトレジスト層
２１・・・・・・・光硬化性樹脂
２３・・・・・・・シャッタ
２４・ ・ ・ ・ ・・ ・ＮＤフィルタ２５・・・
・・・・対物レンズ
２６・・・・・・・スペーシャルホルダ２７・・・・・
・・コリメートレンズ
３０・・・・・・・基本回折格子
３２・・・・・・・半導体レーザ基板
３ビーム■クヌパンタ゛′
第２図
レーザビーム
レーザビーム
第３図
１３レーザビーム
第５図1 and 6 are diagrams for explaining the present invention in detail, Figures 2 and 3 are diagrams for explaining the conventional technology, and Figures 4 and 5 are diagrams for explaining the present invention in detail. It is a figure for explaining. 1.22... Laser oscillator 2... Beam splinter 3, 4.29... Beam expander 5.6.7...
・Mirror 8, 10.18.19...Substrate 9, 17.31...Photoresist 11...Negative resist 12...Positive resist 13...・Laser beam 14...Diffraction grating 15...+1st order diffraction grating 16...-1st order diffraction grating 2D...Photoresist layer 21 ......Photocurable resin 23...Shutter 24... -ND filter 25...
...Objective lens 26...Spatial holder 27...
・・Collimating lens 30・・・・・Basic diffraction grating 32・・・・・Semiconductor laser substrate 3 beam ■Kunupanta' Figure 2 Laser beam Laser beam Figure 3 13 Laser beam Figure 5
Claims (1)
に転写し、格子パターンが転写された前記基板を原盤と
して光硬化性樹脂により前記格子パターンの複製を作成
し、この光硬化性樹脂からなる格子パターンを用いてコ
ヒーレント転写法により格子を作成することを特徴とす
る回折格子の製造方法。(1) A lattice formed on a resist layer on a substrate is transferred to the substrate, a copy of the lattice pattern is created using a photocurable resin using the substrate onto which the lattice pattern has been transferred as a master, and the photocurable resin 1. A method for manufacturing a diffraction grating, characterized in that the grating is created by a coherent transfer method using a grating pattern consisting of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63208197A JPH0258284A (en) | 1988-08-24 | 1988-08-24 | Manufacture of diffraction grating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63208197A JPH0258284A (en) | 1988-08-24 | 1988-08-24 | Manufacture of diffraction grating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0258284A true JPH0258284A (en) | 1990-02-27 |
Family
ID=16552268
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63208197A Pending JPH0258284A (en) | 1988-08-24 | 1988-08-24 | Manufacture of diffraction grating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0258284A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05273427A (en) * | 1991-09-18 | 1993-10-22 | Carl Zeiss:Fa | Optical waveguide having substantially flat substrate and treatment for its manufacture |
| JPH07140311A (en) * | 1992-10-29 | 1995-06-02 | Canada | Formation method of bragg grating by using silica-glass phase grating mask |
-
1988
- 1988-08-24 JP JP63208197A patent/JPH0258284A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05273427A (en) * | 1991-09-18 | 1993-10-22 | Carl Zeiss:Fa | Optical waveguide having substantially flat substrate and treatment for its manufacture |
| JPH07140311A (en) * | 1992-10-29 | 1995-06-02 | Canada | Formation method of bragg grating by using silica-glass phase grating mask |
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