JPH0256436B2 - - Google Patents
Info
- Publication number
- JPH0256436B2 JPH0256436B2 JP60207922A JP20792285A JPH0256436B2 JP H0256436 B2 JPH0256436 B2 JP H0256436B2 JP 60207922 A JP60207922 A JP 60207922A JP 20792285 A JP20792285 A JP 20792285A JP H0256436 B2 JPH0256436 B2 JP H0256436B2
- Authority
- JP
- Japan
- Prior art keywords
- plating
- silver plating
- tin
- silver
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000007747 plating Methods 0.000 claims description 85
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 56
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 50
- 229910052709 silver Inorganic materials 0.000 claims description 50
- 239000004332 silver Substances 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 34
- 229910052759 nickel Inorganic materials 0.000 claims description 28
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 26
- 229910017052 cobalt Inorganic materials 0.000 claims description 19
- 239000010941 cobalt Substances 0.000 claims description 19
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 19
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 description 17
- 238000012360 testing method Methods 0.000 description 15
- 206010042674 Swelling Diseases 0.000 description 13
- 230000008961 swelling Effects 0.000 description 13
- 229910000906 Bronze Inorganic materials 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 239000010974 bronze Substances 0.000 description 8
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229940044175 cobalt sulfate Drugs 0.000 description 2
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 2
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は錫を含む銅合金基材に対する銀メツキ
方法に関し、特に半導体装置用リードフレーム或
いはコネクタの銀メツキに適用して有用なメツキ
方法に係る。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a method for silver plating a copper alloy base material containing tin, and in particular to a method useful for silver plating lead frames or connectors for semiconductor devices. .
半導体装置用リードフレームおよびコネクタ類
の基材には、錫を含む銅合金が一般に使用されて
いる。該銅合金を基材として作製されたこれら部
品には、夫々に要求される機能に適合させるため
に貴金属メツキ、特に銀メツキが施される。この
場合、金メツキを避けたのはコストを削減するた
めである。
Copper alloys containing tin are generally used as base materials for semiconductor device lead frames and connectors. These parts made using the copper alloy as a base material are plated with a precious metal, especially silver plating, in order to adapt them to the required functions. In this case, gold plating was avoided to reduce costs.
ところが、このような錫を含む銅合金基材に対
する銀メツキは一般の銅基材へのメツキと異なつ
て密着性が悪い。例えば、メツキ直後に室温下で
放置した場合には何等問題を生じないが、長期間
保存したり或いは部品使用時に加熱したりすると
メツキ被膜に脹れ（気泡）や剥れを生じることが
ある。この脹れや剥離れの現象は、銀メツキ層が
大気中の酸素を拡散透過させること及び銅合金基
材中に含まれる錫の影響によるもので、銀メツキ
被膜を透過した酸素が基材表面に存在する錫と反
応して酸化物を形成するために生じるものであ
る。加熱すると、この酸素の拡散は更に活発にな
る。従つて、メツキに際して通常行なわれる前処
理が極めて重要となる。即ち、前処理で基材表面
を活性化するときに基材表面が錫リツチの状態に
なり、上記脹れが剥れの問題が顕著になるからで
ある。 However, silver plating on such copper alloy substrates containing tin has poor adhesion, unlike plating on general copper substrates. For example, if the part is left at room temperature immediately after plating, no problems will occur, but if the part is stored for a long time or heated during use, the plating film may swell (bubbles) or peel. This phenomenon of swelling and peeling is due to the fact that the silver plating layer diffuses and permeates oxygen in the atmosphere and is due to the influence of tin contained in the copper alloy base material. This occurs because tin reacts with the tin present in the metal to form an oxide. When heated, this oxygen diffusion becomes even more active. Therefore, the pretreatment that is normally performed during plating is extremely important. That is, when the surface of the base material is activated in the pretreatment, the surface of the base material becomes tin-rich, and the problem of the above-mentioned swelling and peeling becomes significant.
このような問題を回避するため従来は前処理方
法に工夫を凝らし、酸洗による活性力強化、銅お
よびニツケルストライクを施す等、密着性の改善
のために複雑な工程を組んで前処理を施したり、
また素材ロツト毎に前処理条件を設定したりして
いるのが実状である。 In order to avoid such problems, conventional pretreatment methods have been devised, and pretreatment has been performed using complicated processes to improve adhesion, such as increasing the activation power through pickling and applying copper and nickel strikes. Or,
Furthermore, the reality is that pretreatment conditions are set for each material lot.
また、薄い銅メツキまたはニツケルメツキを下
地に用い、その上に銀メツキを行なうことも行な
われている。 It is also practiced to use thin copper plating or nickel plating as a base and then silver plating thereon.
しかし、上記のように複雑な前処理を施した場
合にも、錫含有銅合金基材の特性がロツト毎に相
違したり、或いは前処理条件にバラツキがあるた
め、銀メツキ後の加熱試験（例えば空気中350±
５℃で５分間）による密着性加速評価において脹
れや剥れを生じる事故が頻発している。この場
合、メツキ被膜の脹れや剥れの程度は50倍の顕微
鏡下でようやく観察できる微細なものから、一見
して判別できるものまで様々である。
However, even when complex pretreatment is performed as described above, the properties of the tin-containing copper alloy base material differ from lot to lot, or the pretreatment conditions vary, so the heating test after silver plating ( For example, 350± in air
During accelerated adhesion evaluations (at 5°C for 5 minutes), accidents resulting in swelling and peeling frequently occur. In this case, the degree of swelling and peeling of the plating film varies from minute ones that can only be observed under a microscope at 50x magnification to ones that can be discerned at a glance.
また、下地に薄い銅メツキやニツケルメツキを
施した場合にも、その下地層に存在するピンホー
ルを通して酸素が基材表面にまで拡散するため、
脹れ及び剥れ等の問題を充分には防止できていな
い。 In addition, even when thin copper plating or nickel plating is applied to the base layer, oxygen diffuses to the surface of the base material through the pinholes that exist in the base layer.
Problems such as swelling and peeling cannot be sufficiently prevented.
その結果、錫含有銅合金基材に従来法で銀メツ
キを施したリードフレームを用い、半導体装置を
アセンブリーすると、組立て時の加熱工程でリー
ドフレームの銀メツキ被膜に脹れや剥れを生じる
ため、半導体装置の品質が極めて不安定になる問
題があつた。 As a result, when a semiconductor device is assembled using a lead frame in which a tin-containing copper alloy base material is silver-plated using the conventional method, the silver plating film on the lead frame swells or peels during the heating process during assembly. There was a problem that the quality of semiconductor devices became extremely unstable.
本発明は上記事情に鑑みてなされたもので、錫
含有銅合金基材に銀メツキを施すに際して銀メツ
キ被膜の密着性を向上し、長期保存および加熱に
も充分に耐えることができる安定した品質の銀メ
ツキ被膜を形成する方法を提供するものである。
The present invention was made in view of the above circumstances, and it improves the adhesion of the silver plating film when silver plating is applied to a tin-containing copper alloy base material, and provides stable quality that can sufficiently withstand long-term storage and heating. The present invention provides a method for forming a silver plating film.
発明者は上記の目的を達成するために鋭意研究
を行なつた結果、錫含有銅合金基材表面に銀メツ
キを行なう際に、下地層としてコバルト含有率２
〜８％のニツケルメツキ層を用いることで銀メツ
キ層の脹れや剥れが防止できることを見出し、本
発明に至つたものである。
As a result of intensive research to achieve the above object, the inventor found that when silver plating is applied to the surface of a tin-containing copper alloy base material, a cobalt content of 2.
It was discovered that by using a nickel plating layer of ~8%, swelling and peeling of the silver plating layer can be prevented, leading to the present invention.
即ち、本発明による錫含有銅合金基材の銀メツ
キ方法は、錫含有銅合金基材表面に、コバルト含
有率２〜８％のニツケルメツキを施した後、該ニ
ツケルメツキ層上に銀メツキを施すことを特徴と
するものである。 That is, the method for silver plating a tin-containing copper alloy substrate according to the present invention involves applying nickel plating with a cobalt content of 2 to 8% on the surface of the tin-containing copper alloy substrate, and then applying silver plating on the nickel plating layer. It is characterized by:
本発明の方法で所期の目的が達成される詳細な
理由については未だ明らかではないが、銀メツキ
の下地に用いたメツキ層、即ち２〜８％のコバル
トを含有するニツケル層と基材表面に存在する錫
との相互拡散により基材表面に存在する錫の影響
が軽減される結果、下地層の上に形成された銀メ
ツキ層は脹れや剥れが防止され、長期の保存や加
熱に対して安定した耐久性を示すものと考えられ
る。 Although the detailed reason why the method of the present invention achieves the intended purpose is not yet clear, the plating layer used as the base for silver plating, that is, the nickel layer containing 2 to 8% cobalt, and the surface of the base material. As a result of interdiffusion with tin present on the base material surface, the influence of tin present on the base material surface is reduced, and as a result, the silver plating layer formed on the base layer is prevented from blistering and peeling, and is suitable for long-term storage and heating. It is thought that it shows stable durability against.
従つて、本発明を適用して銀メツキを施された
リードフレームは銀メツキ層が極めて安定で密着
性に優れているから、これを用いてIC等の半導
体装置のアセンブリーを行なえば、安定した品質
を得ることができる。 Therefore, since the silver plating layer of the lead frame plated with silver according to the present invention is extremely stable and has excellent adhesion, it can be used to assemble semiconductor devices such as ICs in a stable manner. You can get quality.
以下に本発明の実施例を説明する。 Examples of the present invention will be described below.
実施例 １
錫含有率６％の燐青銅板材に対し、前処理とし
て脱脂洗浄、酸洗浄、濃HCl：H2O＝１：１の塩
酸水溶液による活性化を順次行なつた。Example 1 A phosphor bronze plate material with a tin content of 6% was pretreated by sequentially performing degreasing cleaning, acid cleaning, and activation with a hydrochloric acid aqueous solution of concentrated HCl:H 2 O=1:1.
次に、この前処理後の燐青銅板材に対し、硫酸
コバルトを添加した下地メツキ用のニツケルメツ
キ浴にて厚さ1μのニツケルメツキを施した後、
銀メツキを行なつた。なお、下地のニツケルメツ
キ層を化学分析したところ、約10のコバルトが含
まれていた。 Next, the phosphor bronze plate material after this pretreatment was nickel plated to a thickness of 1 μm in a nickel plating bath for base plating containing cobalt sulfate.
Performed silver plating. Chemical analysis of the underlying Nickelmetsuki layer revealed that it contained about 10% of cobalt.
上記のようにして銀メツキを施した燐青銅板材
サンプルについて、空気中で350℃、５分間の加
熱試験を行なつたところ、銀メツキ被膜の脹れは
全くなく、良好なメツキが得られた。 When a phosphor bronze plate sample plated with silver as described above was subjected to a heating test at 350°C for 5 minutes in air, there was no swelling of the silver plating film, and good plating was obtained. .
比較例として、前記の前処理を施した燐青銅板
材に対して直接銀メツキを行なつたものでは、こ
れを空気中で350℃、５分間の加熱試験で銀メツ
キ層に小さな脹れ（気泡）が発生した。 As a comparative example, a phosphor bronze plate material subjected to the above pretreatment was directly silver-plated, and a heating test at 350°C for 5 minutes in air caused small bulges (bubbles) in the silver-plated layer. )There has occurred.
また、前記の前処理を施した燐青銅板材に対し
てコバルト成分を添加していない市販のニツケル
メツキ液を用いてニツケルメツキを施し、その上
に銀メツキを行なつたものについても、同じ加熱
試験で銀メツキ層に小さな脹れ（気泡）が発生し
た。 In addition, the same heating test was performed on the phosphor bronze plate material that had been pretreated as described above, which was then nickel-plated using a commercially available nickel-plating solution that did not contain cobalt components, and then silver-plated. Small swelling (bubbles) occurred in the silver plating layer.
実施例 ２
実施例１で下地に用いたニツケルメツキ層にお
けるコバルト量の影響を調べるため、実施例１の
前処理を施した燐青銅板材に対し、コバルト含有
量を種々変化させて膜厚1μのニツケルメツキを
施し、その上に厚さ5μの銀メツキを施した後、
夫々のサンプルについて実施例１と同じ加熱試験
を行なつた。Example 2 In order to investigate the effect of the amount of cobalt in the nickel plating layer used as the base in Example 1, nickel plating with a film thickness of 1 μm was applied to the phosphor bronze plate material that had been pretreated in Example 1 with various cobalt contents. After applying 5μ thick silver plating on top of it,
The same heating test as in Example 1 was conducted on each sample.
市販のニツケルメツキ液をそのまま用いたもの
では、下地ニツケルメツキ層中のコバルト含有率
が0.1以下であり、加熱試験により銀メツキ被膜
に小さな脹れを生じた。 When a commercially available nickel plating solution was used as is, the cobalt content in the underlying nickel plating layer was 0.1 or less, and small swelling occurred in the silver plating film during the heating test.
他方、市販メツキ液中に硫酸コバルトを添加し
たメツキ浴で下地ニツケルメツキを施したもので
は、ニツケルメツキ層中のコバルト含有率が２％
に達すると脹れ現象が無くなり、更にコバルト含
有率を15％まで増加させたものでも脹れ現象は全
く無かつた。 On the other hand, when the base nickel plating was performed using a plating bath containing cobalt sulfate added to a commercially available plating solution, the cobalt content in the nickel plating layer was 2%.
When the cobalt content reached 15%, the swelling phenomenon disappeared, and even when the cobalt content was increased to 15%, there was no swelling phenomenon at all.
実施例 ３
実施例２の下地ニツケルメツキ層を施した段階
で加熱試験を行なつたところ、コバルト含有率が
増加するに伴つてニツケルメツキ被膜の酸化変色
度合が強くなり、含有率５％当りから色調が濃く
なつた。Example 3 When a heating test was conducted after applying the base nickel plating layer of Example 2, it was found that as the cobalt content increased, the degree of oxidative discoloration of the nickel plating film became stronger, and the color tone changed from around 5% content. It got darker.
そこで、実施例１の前処理を施した燐青銅板材
（錫含有率６％）にコバルト含有率が略10％の下
地ニツケルメツキを施して銀メツキを行ない、実
施例１の場合と同じ加熱試験を実施した後、更に
90゜の折曲げを繰返して銀メツキの密着性を調べ
たところ、僅かに剥れるものがあつた。このとき
銀メツキが剥れた下のニツケルメツキ面は薄茶色
に変色していた。他方、下地ニツケルメキ層のコ
バルト含有率を８％以下としたものでは、上記と
同じ試験をした場合にも剥れは生じなかつた。 Therefore, the phosphor bronze plate material (tin content 6%) that had been pretreated in Example 1 was coated with nickel plating with a cobalt content of approximately 10% and then silver plated, and the same heating test as in Example 1 was conducted. After implementation, further
When we checked the adhesion of the silver plating by repeatedly bending it at 90 degrees, we found that some pieces peeled off slightly. At this time, the nickel plating surface under which the silver plating had peeled off had turned light brown. On the other hand, when the cobalt content of the base nickel plating layer was 8% or less, no peeling occurred even when the same test as above was conducted.
以上、実施例１〜３の結果から、錫含有銅合金
基材への銀メツキにはコバルトを含むニツケルメ
ツキの下地を施すのが有効で、その際のコバルト
含有率は２〜８％の範囲が良いことが判明した。 From the results of Examples 1 to 3 above, it is effective to apply a nickel plating base containing cobalt to silver plating on a tin-containing copper alloy base material, and the cobalt content at that time should be in the range of 2 to 8%. It turned out to be good.
実施例 ４
錫含有率６％の燐青銅板材をプレス成形した第
１図に示す平面形状のリードフレーム基材に対
し、実施例１と同様の前処理を施した。次いで、
その全表面にコバルト含有率５％、厚さ1μの下
地ニツケルメツキを施し、その上に厚さ5μの銀
メツキを行なつた。第２図は銀メツキを施した状
態での断面図で、１はリードフレーム基材、２は
下地ニツケルメツキ層、３は銀メツキ被膜であ
る。Example 4 A lead frame base material having the planar shape shown in FIG. 1, which was press-molded from a phosphor bronze plate material with a tin content of 6%, was subjected to the same pretreatment as in Example 1. Then,
A nickel plating with a cobalt content of 5% and a thickness of 1 μm was applied to the entire surface, and a 5 μm thick silver plating was applied thereon. FIG. 2 is a cross-sectional view of the lead frame after being plated with silver. 1 is the lead frame base material, 2 is the base nickel plating layer, and 3 is the silver plating film.
このリードフレームについて大気中で350℃×
５分の加熱試験を行ない、表面を50倍の顕微鏡で
観察したところ、銀メツキ被膜３に脹れ（気泡）
は全く観察されなかつた。また、このリードフレ
ームを用いてICの組立てを行なつたところ、ダ
イボンデイング工程およびワイヤボンデイング工
程において何等問題は生じなかつた。 About this lead frame: 350℃×in the atmosphere
When we conducted a 5-minute heating test and observed the surface under a 50x microscope, we found that the silver plating film 3 had swelling (bubbles).
was not observed at all. Furthermore, when an IC was assembled using this lead frame, no problems occurred in the die bonding process and the wire bonding process.
なお、比較例として下地ニツケルメツキ層２の
コバルト含有率を0.1以下として5μの銀メツキ３
を行なつたものでは、前記と同じ加熱試験で銀メ
ツキ被膜に小さな脹れ（気泡）が観察された。 In addition, as a comparative example, the cobalt content of the base nickel plating layer 2 was 0.1 or less, and 5μ silver plating 3 was used.
In the case where this was carried out, small swellings (bubbles) were observed in the silver plating film during the same heating test as above.
実施例 ５
実施例４の場合と同じリードフレーム基材１を
用い、且つ下地ニツケルメツキ層２を形成するま
でを実施例４と同様に行なつた。続いて、その上
に噴流方式により部分的に銀メツキを施した。第
３図はその断面図で、図示のように銀メツキ層３
は必要とされる部分、即ちICチツプをダイボン
デイングする中央のベツド部と、ワイヤボンデイ
ングが行なわれるリード部の先端（ボンデイング
ポスト）のみに選択的に形成されている。Example 5 The same lead frame base material 1 as in Example 4 was used, and the steps up to forming the base nickel plating layer 2 were carried out in the same manner as in Example 4. Subsequently, silver plating was partially applied thereon using a jet method. Figure 3 is a cross-sectional view of the same, and as shown in the figure, the silver plating layer 3
are selectively formed only in necessary parts, ie, the central bed part where the IC chip is die-bonded, and the tip of the lead part (bonding post) where wire bonding is performed.
このリードフレームについて実施例４の場合と
同じ加熱試験を行なつたところ、銀メツキ被膜に
は何等以上は生じなかつた。更に、このリードフ
レームを用いてICの組立てを行なつたが、何等
問題は生じなかつた。 When this lead frame was subjected to the same heating test as in Example 4, no damage was observed on the silver plating film. Furthermore, when we assembled an IC using this lead frame, no problems occurred.
なお、第４図に示すように、下地メツキ層２に
ついても必要な部分だけに限定して上記と同じ銀
メツキを行なつたところ、加熱試験およびIC組
立て工程において何等問題はなかつた。 As shown in FIG. 4, when the same silver plating as above was applied to the base plating layer 2 only on the necessary portions, no problems were found in the heating test and IC assembly process.
実施例 ６
錫含有率１％の銅板を第１図のようにプレス成
形したリードフレーム基材を用い、該基材に対し
て実施例４と同様の方法で銀メツキを行なつたと
ころ、加熱試験およびIC組立て工程において何
等問題はなかつた。Example 6 Using a lead frame base material press-molded from a copper plate with a tin content of 1% as shown in Figure 1, silver plating was performed on the base material in the same manner as in Example 4. There were no problems during the testing and IC assembly process.
また、参考までに錫を含まない燐脱酸銅からな
るリードフレーム基材と、無酸素銅材からなるリ
ードフレーム基材に対し、夫々実施例４と同様の
方法で銀メツキを行なつたところ、加熱試験およ
びIC組立て工程において何等問題はなかつた。 For reference, a lead frame base material made of phosphorus-deoxidized copper that does not contain tin and a lead frame base material made of oxygen-free copper material were each plated with silver in the same manner as in Example 4. There were no problems during the heating test and IC assembly process.
以上詳述したように、本発明によれば錫含有銅
合金基材に銀メツキを施すに際して銀メツキ被膜
の密着性を向上し、長期保存および加熱にも充分
に耐えることができる安定した品質の銀メツキ被
膜を形成することができ、特に半導体装置の組立
てに用いるリードフレームの銀メツキに適用すれ
ば半導体装置製品の品質を向上できる等、顕著な
効果が得られるものである。
As detailed above, according to the present invention, when silver plating is applied to a tin-containing copper alloy base material, the adhesion of the silver plating film is improved, and stable quality that can sufficiently withstand long-term storage and heating is achieved. It is possible to form a silver plating film, and particularly when applied to silver plating of lead frames used for assembling semiconductor devices, remarkable effects such as improving the quality of semiconductor device products can be obtained.
第１図はリードフレームの平面図、第２図〜第
４図は夫々本発明を適用して銀メツキを施したリ
ードフレームの断面図である。
１…リードフレーム基材、２…下地ニツケルメ
ツキ層、３…銀メツキ被膜。
FIG. 1 is a plan view of a lead frame, and FIGS. 2 to 4 are cross-sectional views of lead frames to which silver plating is applied according to the present invention. 1...Lead frame base material, 2...Underlying nickel plating layer, 3...Silver plating film.
Claims (1)
８％のニツケルメツキを施した後、該ニツケルメ
ツキ層上に銀メツキを施すことを特徴とする錫含
有銅合金基材の銀メツキ方法。 ２ 前記錫含有銅合金基材が半導体装置のアセン
ブリーに用いるリードフレームであることを特徴
とする特許請求の範囲第１項記載の錫含有銅合金
基材の銀メツキ方法。[Claims] 1 Cobalt content on the surface of the tin-containing copper alloy base material 2 to 2
A method for silver plating a tin-containing copper alloy substrate, which comprises applying 8% nickel plating and then applying silver plating on the nickel plating layer. 2. The method for silver plating a tin-containing copper alloy substrate according to claim 1, wherein the tin-containing copper alloy substrate is a lead frame used in the assembly of a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20792285A JPS6270596A (en) | 1985-09-20 | 1985-09-20 | Method for plating copper alloy substrate containing tin with silver |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20792285A JPS6270596A (en) | 1985-09-20 | 1985-09-20 | Method for plating copper alloy substrate containing tin with silver |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6270596A JPS6270596A (en) | 1987-04-01 |
| JPH0256436B2 true JPH0256436B2 (en) | 1990-11-30 |
Family
ID=16547773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20792285A Granted JPS6270596A (en) | 1985-09-20 | 1985-09-20 | Method for plating copper alloy substrate containing tin with silver |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6270596A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07123153B2 (en) * | 1986-11-12 | 1995-12-25 | 日立電線株式会社 | Method for manufacturing lead frame for semiconductor device |
| JP2726434B2 (en) * | 1988-06-06 | 1998-03-11 | 古河電気工業株式会社 | Sn or Sn alloy coating material |
| JP2670348B2 (en) * | 1989-05-15 | 1997-10-29 | 古河電気工業株式会社 | Sn or Sn alloy coating material |
| JP2525513B2 (en) * | 1990-12-21 | 1996-08-21 | 株式会社三井ハイテック | Method for manufacturing lead frame for semiconductor device |
| JP2002334960A (en) * | 2001-05-07 | 2002-11-22 | Leadmikk Ltd | Satisfactory printable heat-dissipating material |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6013078A (en) * | 1983-07-04 | 1985-01-23 | Nippon Steel Corp | Double-chromated steel sheet |
-
1985
- 1985-09-20 JP JP20792285A patent/JPS6270596A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6013078A (en) * | 1983-07-04 | 1985-01-23 | Nippon Steel Corp | Double-chromated steel sheet |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6270596A (en) | 1987-04-01 |
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