JPH0250691B2 - - Google Patents

Info

Publication number
JPH0250691B2
JPH0250691B2 JP57176881A JP17688182A JPH0250691B2 JP H0250691 B2 JPH0250691 B2 JP H0250691B2 JP 57176881 A JP57176881 A JP 57176881A JP 17688182 A JP17688182 A JP 17688182A JP H0250691 B2 JPH0250691 B2 JP H0250691B2
Authority
JP
Japan
Prior art keywords
thyristor
circuit
signal
failure
detection device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57176881A
Other languages
Japanese (ja)
Other versions
JPS5967867A (en
Inventor
Susumu Matsumura
Nobuo Sashida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kansai Electric Power Co Inc
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Kansai Denryoku KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp, Kansai Denryoku KK filed Critical Mitsubishi Electric Corp
Priority to JP17688182A priority Critical patent/JPS5967867A/en
Publication of JPS5967867A publication Critical patent/JPS5967867A/en
Publication of JPH0250691B2 publication Critical patent/JPH0250691B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H02M1/092Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the control signals being transmitted optically

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Protection Of Static Devices (AREA)
  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)
  • Electronic Switches (AREA)

Description

【発明の詳細な説明】 この発明は、直列サイリスタの故障検出装置に
関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a failure detection device for a series thyristor.

第1図に、この種の故障検出装置の従来例を示
す。図において、1,1,1は直列接続されたサ
イリスタであつて、各サイリスタ1のアノード・
カソード間には発光素子2が電流制限抵抗3を介
して挿入されている。この発光素子2はサイリス
タ1のアノード・カソード間に順電圧+VA-K
現われている場合に導通して順電圧検出信号(光
信号)Oを出力する。この光信号Oはライトガイ
ドで構成された光伝送路4を通して受光素子5ま
で光伝達される。受光素子5は光信号Oを電気信
号の順方向検出信号Eに変換して平均値回路6に
入力する。この平均値回路6は入力を積分してサ
イリスタ1の印加電圧の周期より長い期間で平均
し、順電圧+VA-Kの幅に対応したレベルの電圧
信号Uを出力する。7は故障計数回路であつて、
全平均値回路6,6,6が出力する電圧信号Uが
導かれる構成となつており、所定レベル以下の電
圧信号Uの数、即ち故障と見なされるサイリスタ
1の個数を計数する。なお、第2図a及びbにサ
イリスタ1のアノード・カソード間に現われる電
圧VA-K(但し、6相整流回路のサイリスタの場
合)及び光信号Oの波形を示す。
FIG. 1 shows a conventional example of this type of failure detection device. In the figure, 1, 1, 1 are thyristors connected in series, and the anode and
A light emitting element 2 is inserted between the cathodes via a current limiting resistor 3. This light emitting element 2 becomes conductive when a forward voltage +V AK appears between the anode and cathode of the thyristor 1 and outputs a forward voltage detection signal (optical signal) O. This optical signal O is optically transmitted to a light receiving element 5 through an optical transmission line 4 constituted by a light guide. The light receiving element 5 converts the optical signal O into a forward direction detection signal E of an electric signal and inputs it to the average value circuit 6. This average value circuit 6 integrates the input and averages it over a period longer than the period of the voltage applied to the thyristor 1, and outputs a voltage signal U having a level corresponding to the width of the forward voltage +V AK . 7 is a failure counting circuit,
The voltage signal U output from the total average value circuits 6, 6, 6 is guided, and the number of voltage signals U below a predetermined level, that is, the number of thyristors 1 that are considered to be in failure is counted. Incidentally, FIGS. 2a and 2b show the voltage V AK appearing between the anode and cathode of the thyristor 1 (in the case of a thyristor of a six-phase rectifier circuit) and the waveform of the optical signal O.

このように、従来の装置では、受光素子5の出
力を平均値回路6で平均して故障計数回路7に入
力し、故障計数回路7では所定レベル以下の電圧
信号Uの数を計数する為、サイリスタ1の制御角
が変わり順電圧+VA-Kの幅が変化すると、電圧
信号Uのレベルも変わるので故障サイリスタの数
が誤つて計数される恐れがある上、平均値回路6
による応答の時間遅れがあるという欠点があつ
た。
In this manner, in the conventional device, the output of the light receiving element 5 is averaged by the averaging circuit 6 and input to the failure counting circuit 7, and the failure counting circuit 7 counts the number of voltage signals U below a predetermined level. When the control angle of the thyristor 1 changes and the width of the forward voltage +V AK changes, the level of the voltage signal U also changes, which may cause the number of failed thyristors to be counted incorrectly, and the average value circuit 6
The disadvantage was that there was a delay in response time.

この発明は、上記した従来の欠点を除去する為
になされたもので、各受光素子が出力する順電圧
検出信号をサンプリングして記憶する記憶回路
と、サイリスタの点弧信号発生時に、これら記憶
回路の順電圧検出信号の記憶の有無から故障を検
出する検出回路とを設けることによつて、従来に
比して、正確で、応答の早い直列サイリスタの故
障検出装置を提供することを目的とする。
This invention was made in order to eliminate the above-mentioned conventional drawbacks, and includes a memory circuit that samples and stores the forward voltage detection signal output from each light receiving element, and a memory circuit that samples and stores the forward voltage detection signal outputted by each light receiving element, and a memory circuit that samples and stores the forward voltage detection signal output from each light receiving element. It is an object of the present invention to provide a failure detection device for a series thyristor that is more accurate and has a faster response than the conventional one by providing a detection circuit that detects a failure from the presence or absence of storage of a forward voltage detection signal. .

以下、この発明の一実施例を図について説明す
る。
An embodiment of the present invention will be described below with reference to the drawings.

第3図において、21,21及び21は増幅回
路、22,22及び22はフリツプフロツプで構
成された記憶回路である。各受光素子5の出力E
は増幅回路21を通して対応する記憶回路22の
セツト端子に入力される。この記憶回路22のセ
ツト出力Qは検出回路23に供給される。この検
出回路23はこの実施例ではサイリスタ1の点弧
信号Pの立上りと同期して計数動作を開始する計
数回路で構成される第1図の故障計数回路7と同
様に、入力されなかつたセツト出力Qの数を故障
サイリスタの数として計数する。24はクロツク
発生器、25は論理反転素子、26は論理積素子
である。論理積素子26は論理反転素子25で反
転された点弧信号Pとクロツク発生器24が出力
するクロツク信号Sとを受け、点弧信号Pが発生
しない間、クロツク信号Sを各記憶回路22のク
ロツク端子Cに入力し、点弧信号Pが発生すると
クロツク信号Sを阻止する。このクロツク信号S
の周期は順電圧検出信号Eの予め定められた最小
信号幅Wより小さく設定されている。なお、第4
図a〜eに、各部の信号波形を示す。
In FIG. 3, 21, 21, and 21 are amplifier circuits, and 22, 22, and 22 are storage circuits composed of flip-flops. Output E of each light receiving element 5
is inputted through the amplifier circuit 21 to the set terminal of the corresponding memory circuit 22. The set output Q of this memory circuit 22 is supplied to a detection circuit 23. In this embodiment, this detection circuit 23 is constructed of a counting circuit that starts counting operation in synchronization with the rise of the firing signal P of the thyristor 1. Similar to the failure counting circuit 7 shown in FIG. Count the number of outputs Q as the number of failed thyristors. 24 is a clock generator, 25 is a logic inversion element, and 26 is an AND element. The AND element 26 receives the firing signal P inverted by the logic inverting element 25 and the clock signal S output from the clock generator 24, and supplies the clock signal S to each memory circuit 22 while the firing signal P is not generated. It is input to the clock terminal C, and when the firing signal P is generated, the clock signal S is blocked. This clock signal S
The period is set smaller than a predetermined minimum signal width W of the forward voltage detection signal E. In addition, the fourth
Figures a to e show signal waveforms at each part.

この構成では、受光素子5が光信号Oを受光し
て順電圧検出信号Eを出力した場合、この出力期
間中に、必らず、1つのクロツク信号Sが記憶回
路22に入力されるので、該記憶回路22は、到
来している順電圧検出信号Eを、矢印で示すクロ
ツク信号Sに同期して取込み、セツト出力Qを送
出する。この状態で続いて点弧信号Pが発生する
ので、検出回路23が、複数の記憶回路22のセ
ツト出力Qの数に基いて故障したサイリスタ1の
数を計数する。
In this configuration, when the light receiving element 5 receives the optical signal O and outputs the forward voltage detection signal E, one clock signal S is necessarily input to the memory circuit 22 during this output period. The memory circuit 22 takes in the incoming forward voltage detection signal E in synchronization with the clock signal S shown by the arrow, and sends out a set output Q. Since the ignition signal P is subsequently generated in this state, the detection circuit 23 counts the number of failed thyristors 1 based on the number of set outputs Q of the plurality of memory circuits 22.

ところで、点弧信号を受けた時点(点弧タイミ
ング)まで、アノード・カソード間に順電圧が現
われているサイリスタが本当に健全なサイリスタ
である。本実施例では、極めて短いサンプリング
周期で各受光素子21の出力のサンプリングを行
うので、点弧信号Pの発生直前のサイリスタ1の
状態を各記憶回路22に記憶させることができ、
この記憶内容を点弧信号Pの発生時にチエツクす
るから、実質的には、常に点弧信号発生時のサイ
リスタ1の状態を検出するものと見ることがで
き、従つて、健全なサイリスタの全てを確実に、
かつ、速やかに検出することができる。
By the way, a thyristor in which a forward voltage appears between the anode and the cathode until it receives an ignition signal (ignition timing) is a truly healthy thyristor. In this embodiment, since the output of each light receiving element 21 is sampled at an extremely short sampling period, the state of the thyristor 1 immediately before the firing signal P is generated can be stored in each storage circuit 22.
Since this memory content is checked when the ignition signal P is generated, it can be seen as essentially always detecting the state of the thyristor 1 when the ignition signal is generated, and therefore all healthy thyristors are detected. surely,
Moreover, it can be detected quickly.

また、サイリスタの順電圧が立上るタイミング
には、逆電圧期間のバラツキに起因するバラツキ
があるが、本実施例では、上記のように、実質的
には点弧信号(各サイリスタに対して同時)を受
けた時点の状態を検出するから、サイリスタの点
弧位相遅れ角が小さい場合にも、上記バラツキに
原因する誤検出を確実に防止することができる。
In addition, the timing at which the forward voltage of the thyristor rises varies due to variation in the reverse voltage period, but in this embodiment, as described above, the firing signal (simultaneously for each thyristor) ) is detected, so even if the firing phase delay angle of the thyristor is small, erroneous detection caused by the above-mentioned variations can be reliably prevented.

なお、検出回路23は表示回路等であつてもよ
い。
Note that the detection circuit 23 may be a display circuit or the like.

以上の如く、この発明によれば、受光素子が出
力する順電圧検出信号を夫々記憶回路にサンプリ
ングして記憶させ、サイリスタの点弧信号の発生
をまつて上記各記憶回路の記憶の有無をチエツク
して該記憶の有無により故障サイリスタの有無や
故障サイリスタの個数等を検出する構成としたこ
とによつて、常に、点弧信号発生直前のサイリス
タの状態を点弧信号発生時に知ることができるの
で、各サイリスタの順電圧の立上りにバラツキが
あつても、健全なサイリスタの全てを確実に検出
して故障サイリスタを有無を正確に、かつ、速や
かに検出することができ、従来に比し、信頼性を
高めることができる。
As described above, according to the present invention, the forward voltage detection signals output from the light receiving elements are sampled and stored in the respective storage circuits, and the presence or absence of the memory in each of the storage circuits is checked before the generation of the firing signal of the thyristor. By adopting a configuration that detects the presence or absence of a faulty thyristor, the number of faulty thyristors, etc. based on the presence or absence of the memory, it is possible to always know the state of the thyristor immediately before the ignition signal is generated when the ignition signal is generated. Even if there is variation in the rise of the forward voltage of each thyristor, all healthy thyristors can be reliably detected and the presence or absence of a faulty thyristor can be detected accurately and quickly, making it more reliable than before. You can increase your sexuality.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の直列サイリスタの故障検出装置
の回路図、第2図は波形図、第3図はこの発明に
よる直列サイリスタの故障検出装置の実施例の回
路図、第4図は上記実施例の動作を説明する為の
波形図である。 図において、1……サイリスタ、2……発光素
子、4……光伝送路、5……受光素子、22……
記憶回路、23……検出回路、24……クロツク
発生器、25……論理反転素子、26……論理積
素子、なお、図中同一符号は同一又は相当部分を
示す。
Fig. 1 is a circuit diagram of a conventional series thyristor failure detection device, Fig. 2 is a waveform diagram, Fig. 3 is a circuit diagram of an embodiment of a series thyristor failure detection device according to the present invention, and Fig. 4 is the above-mentioned embodiment. FIG. 2 is a waveform diagram for explaining the operation of FIG. In the figure, 1... Thyristor, 2... Light emitting element, 4... Optical transmission line, 5... Light receiving element, 22...
Memory circuit, 23...detection circuit, 24...clock generator, 25...logic inverting element, 26... ANDing element, and the same reference numerals in the drawings indicate the same or corresponding parts.

Claims (1)

【特許請求の範囲】 1 直列接続された複数のサイリスタの各アノー
ド・カソード間に極性向きをサイリスタと同じ向
きにして挿入された発光素子、対応する発光素子
が出力する光信号を受光する複数の受光素子を具
えるサイリスタの故障検出装置において、上記各
受光素子が出力する電気信号をそれぞれ同一タイ
ミングでサンプリングして記憶する記憶回路と、
サイリスタの点弧信号発生時に上記各記憶回路の
記憶内容からサイリスタ故障を検出する検出回路
を有し、上記サンプリング周期がサイリスタに加
わる最小順電圧期間より大きくなく、上記記憶内
容が上記点弧信号発生時点に対して最新に記憶さ
れた内容であることを特徴とする直列サイリスタ
の故障検出装置。 2 検出回路がサイリスタの点弧信号を受けて計
数動作を開始する故障計数回路であることを特徴
とする特許請求の範囲第1項記載の直列サイタス
タの故障検出装置。
[Claims] 1. A light emitting element inserted between the anodes and cathodes of a plurality of serially connected thyristors with the polarity facing the same as that of the thyristor, and a plurality of light emitting elements that receive optical signals output from the corresponding light emitting elements. A thyristor failure detection device including a light-receiving element, comprising: a memory circuit that samples and stores electrical signals output from each of the light-receiving elements at the same timing;
It has a detection circuit that detects a thyristor failure from the memory contents of each of the memory circuits when the thyristor firing signal is generated, and the sampling period is not larger than the minimum forward voltage period applied to the thyristor, and the stored contents are the same as the firing signal generation. A failure detection device for a series thyristor, characterized in that the content is the latest stored for a point in time. 2. The failure detection device for a series thyristor according to claim 1, wherein the detection circuit is a failure counting circuit that starts counting operation upon receiving a thyristor firing signal.
JP17688182A 1982-10-07 1982-10-07 Defect detector for series thyristors Granted JPS5967867A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17688182A JPS5967867A (en) 1982-10-07 1982-10-07 Defect detector for series thyristors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17688182A JPS5967867A (en) 1982-10-07 1982-10-07 Defect detector for series thyristors

Publications (2)

Publication Number Publication Date
JPS5967867A JPS5967867A (en) 1984-04-17
JPH0250691B2 true JPH0250691B2 (en) 1990-11-05

Family

ID=16021398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17688182A Granted JPS5967867A (en) 1982-10-07 1982-10-07 Defect detector for series thyristors

Country Status (1)

Country Link
JP (1) JPS5967867A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05288799A (en) * 1992-04-10 1993-11-02 Tabai Espec Corp Environment testing device with normal temperature chamber for installing driver
JP2006271084A (en) * 2005-03-23 2006-10-05 Toshiba Mitsubishi-Electric Industrial System Corp Thyristor failure detection device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02116218A (en) * 1988-10-26 1990-04-27 Nichicon Corp Transistor trouble detecting circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5532460A (en) * 1978-08-30 1980-03-07 Tokyo Shibaura Electric Co Power converter element failure detector
JPS5556418A (en) * 1978-10-20 1980-04-25 Hitachi Ltd Voltage detector trouble detecting circuit for converter

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5532460A (en) * 1978-08-30 1980-03-07 Tokyo Shibaura Electric Co Power converter element failure detector
JPS5556418A (en) * 1978-10-20 1980-04-25 Hitachi Ltd Voltage detector trouble detecting circuit for converter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05288799A (en) * 1992-04-10 1993-11-02 Tabai Espec Corp Environment testing device with normal temperature chamber for installing driver
JP2006271084A (en) * 2005-03-23 2006-10-05 Toshiba Mitsubishi-Electric Industrial System Corp Thyristor failure detection device
JP4579733B2 (en) * 2005-03-23 2010-11-10 東芝三菱電機産業システム株式会社 Thyristor failure detection device

Also Published As

Publication number Publication date
JPS5967867A (en) 1984-04-17

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