JPH0247803A - Manufacture of film resistor - Google Patents
Manufacture of film resistorInfo
- Publication number
- JPH0247803A JPH0247803A JP19955088A JP19955088A JPH0247803A JP H0247803 A JPH0247803 A JP H0247803A JP 19955088 A JP19955088 A JP 19955088A JP 19955088 A JP19955088 A JP 19955088A JP H0247803 A JPH0247803 A JP H0247803A
- Authority
- JP
- Japan
- Prior art keywords
- media
- barrel
- resistor
- film
- plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000007747 plating Methods 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 14
- 229910000679 solder Inorganic materials 0.000 abstract description 11
- 238000009713 electroplating Methods 0.000 abstract description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 28
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 18
- 229910052742 iron Inorganic materials 0.000 description 14
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 6
- 238000001556 precipitation Methods 0.000 description 6
- 238000005476 soldering Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052573 porcelain Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WHOZNOZYMBRCBL-OUKQBFOZSA-N (2E)-2-Tetradecenal Chemical compound CCCCCCCCCCC\C=C\C=O WHOZNOZYMBRCBL-OUKQBFOZSA-N 0.000 description 1
- QIVUCLWGARAQIO-OLIXTKCUSA-N (3s)-n-[(3s,5s,6r)-6-methyl-2-oxo-1-(2,2,2-trifluoroethyl)-5-(2,3,6-trifluorophenyl)piperidin-3-yl]-2-oxospiro[1h-pyrrolo[2,3-b]pyridine-3,6'-5,7-dihydrocyclopenta[b]pyridine]-3'-carboxamide Chemical compound C1([C@H]2[C@H](N(C(=O)[C@@H](NC(=O)C=3C=C4C[C@]5(CC4=NC=3)C3=CC=CN=C3NC5=O)C2)CC(F)(F)F)C)=C(F)C=CC(F)=C1F QIVUCLWGARAQIO-OLIXTKCUSA-N 0.000 description 1
- LCFFREMLXLZNHE-GBOLQPHISA-N (e)-2-[(3r)-3-[4-amino-3-(2-fluoro-4-phenoxyphenyl)pyrazolo[3,4-d]pyrimidin-1-yl]piperidine-1-carbonyl]-4-methyl-4-[4-(oxetan-3-yl)piperazin-1-yl]pent-2-enenitrile Chemical compound C12=C(N)N=CN=C2N([C@@H]2CCCN(C2)C(=O)C(/C#N)=C/C(C)(C)N2CCN(CC2)C2COC2)N=C1C(C(=C1)F)=CC=C1OC1=CC=CC=C1 LCFFREMLXLZNHE-GBOLQPHISA-N 0.000 description 1
- VNTCGXMLDSKOKN-OAHLLOKOSA-N 4-[4-[[(3r)-3-methyl-4-[5-(trifluoromethyl)pyridin-2-yl]piperazin-1-yl]methyl]-1h-pyrazol-5-yl]benzonitrile Chemical compound C([C@H](N(CC1)C=2N=CC(=CC=2)C(F)(F)F)C)N1CC=1C=NNC=1C1=CC=C(C#N)C=C1 VNTCGXMLDSKOKN-OAHLLOKOSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- XULSCZPZVQIMFM-IPZQJPLYSA-N odevixibat Chemical compound C12=CC(SC)=C(OCC(=O)N[C@@H](C(=O)N[C@@H](CC)C(O)=O)C=3C=CC(O)=CC=3)C=C2S(=O)(=O)NC(CCCC)(CCCC)CN1C1=CC=CC=C1 XULSCZPZVQIMFM-IPZQJPLYSA-N 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229940044654 phenolsulfonic acid Drugs 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、端子部を電気バレルメッキするチップ形状皮
膜抵抗器の製造方法に閏する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method of manufacturing a chip-shaped film resistor in which terminal portions are electro-barrel plated.
［従来の技Ｔ４ｊ ］
チップ形状皮膜抵抗器は、テレビ、ラジオを始めとする
通信機又は電気計測機などの電子回路に用いられ、安定
性及び信願性が要求されている。[Conventional Technique T4j] Chip-shaped film resistors are used in electronic circuits such as televisions, radios, communication devices, or electrical measuring devices, and are required to have stability and reliability.
チップ形状皮膜抵抗器の１１が或は、絶縁性セラミック
、例えばアルミナ系磁器の円柱状担体表面に、カーボン
、金属若しくは酸化金属皮膜を形成した抵抗体素子の両
端に金属性のキャップ端子を嵌合させて、キャップ端子
間の皮膜をスパイラル状にカットし、キャップ端子間の
皮膜を所定の抵抗値に調整した後、キャップ端子間を絶
縁性の樹脂で覆って、防湿性、絶縁性、耐熱性、耐衝撃
性が付与され、更に金属キャップの表面に電解バレルメ
ッキによって半田を施して、回路基板への接続性を良好
にしている。Alternatively, metal cap terminals are fitted to both ends of a resistor element in which a carbon, metal, or metal oxide film is formed on the surface of a cylindrical carrier of an insulating ceramic, such as alumina-based porcelain. Then, cut the film between the cap terminals into a spiral shape, adjust the film between the cap terminals to the specified resistance value, and then cover the cap terminals with an insulating resin to make it moisture-proof, insulating, and heat-resistant. In addition to providing impact resistance, the surface of the metal cap is soldered by electrolytic barrel plating to improve connectivity to the circuit board.
しかしながら、抵抗器の小形化の要請は益々高く、小型
で高抵抗値の抵抗器が要望されている。However, there is an increasing demand for miniaturization of resistors, and resistors that are small and have high resistance values are desired.
この要望を満たす為に、金属キャップを除去し、抵抗皮
膜の組成を変えるか、或いは、抵抗皮膜のＪｒＪ、みを
薄くするかなど、何等かの方法によって、抵抗皮膜のシ
ート抵抗値を高くして、小型で高抵抗値の抵抗器を得て
いる。In order to meet this demand, the sheet resistance value of the resistive film can be increased by removing the metal cap, changing the composition of the resistive film, or making the resistive film thinner. As a result, a small, high-resistance resistor has been obtained.
金属キャップを除去した高抵抗値の抵抗体素子は。A high-resistance resistor element with the metal cap removed.
磁器担体の両端の皮膜に、無電解メッキ法によってＣｕ
、Ｎｉ等の低抵抗導体をメッキし、更にその上に半田を
７に解バレルメッキ法によって接続用端子の半田づけ性
を良好にしている。The coating on both ends of the porcelain carrier is coated with Cu by electroless plating.
, Ni, etc. are plated, and solder is further applied thereon by barrel plating method to improve the solderability of the connection terminals.
金属キャップを用いない皮膜抵抗器の製造方法は。How to manufacture film resistors without using metal caps.
例えば円柱状の絶縁性セラミック担体の表面に、Ｎｉ−
Ｃｒ合金、或いは、Ｎｉ、Ｃｒの金属を蒸着、或いはス
パッタリングして、セラミック担体表面に抵抗皮膜を形
成している９次いで、抵抗体素子の中央部分周面にメッ
キレジストを周回させて塗布し硬化させ、抵抗体素子の
両端面とそれに連なる周面の前記抵抗皮膜上に、Ｃｕ若
しくはＮｉを無電解メッキし、接続電極を構成している
。For example, Ni-
A resistive film is formed on the surface of the ceramic carrier by vapor-depositing or sputtering a Cr alloy or a metal such as Ni or Cr9.Next, a plating resist is applied around the circumferential surface of the central portion of the resistor element and hardened. Then, Cu or Ni is electrolessly plated on the resistive film on both end faces of the resistor element and the peripheral face continuous thereto, thereby forming connection electrodes.
次いで前記メッキレジストを剥離して抵抗体素子の再接
続電極を保持して、抵抗体素子の中央部分周面の抵抗皮
膜をスパイラル状に講切りし、再接続電極間に所定の抵
抗値を形成している。Next, the plating resist is peeled off, the reconnection electrodes of the resistor element are held, and the resistance film on the circumferential surface of the central portion of the resistor element is cut in a spiral shape to form a predetermined resistance value between the reconnection electrodes. are doing.
その後、再び前記中央部分の周面に絶縁性の樹脂を塗布
して硬化し、接続電極上にＮｉ、半田を電解バレルメッ
キして、接続用端子を構成している。Thereafter, an insulating resin is again applied to the circumferential surface of the central portion and cured, and Ni and solder are electrolytically barrel plated onto the connection electrodes to form connection terminals.
電解バレルメッキ方法は、壁に多くの貫通孔が形成され
、回転自在のバレル内に陰極を具備し、前記バレル内に
被メッキ物とメディアとを入れる。In the electrolytic barrel plating method, many through holes are formed in the wall, a cathode is provided in a rotatable barrel, and a material to be plated and media are placed in the barrel.
これとは別に陽極を具備したメッキ槽内にメッキ液をい
れる。その後、前記バレルをメッキ槽内に配設し、回転
させながら陽極と陰極間に電圧を印加する。被メッキ物
とメディアとは回転しながらメッキ膜が析出する。Separately, a plating solution is placed in a plating tank equipped with an anode. Thereafter, the barrel is placed in a plating bath, and a voltage is applied between the anode and the cathode while rotating the barrel. A plating film is deposited while the object to be plated and the media rotate.
メディアの形状は、棒状若しくは球状であり、概ね被メ
ッキ物と篩い分けするに充分な大きさのものを用い、そ
の重量は被メッキ物と同等未満のものが利用され、被メ
ッキ物中のメディアの分散が均一になるようにしている
。The shape of the media is rod-shaped or spherical, and the size of the media is large enough to sieve the object to be plated, and the weight is less than the same as the object to be plated. The dispersion is made to be uniform.
［発明が解決しようとする課ｊｄ［］
上記従来のような無電解メッキ法によって、部分メッキ
する事は困難であり、熟練した者が、かなりの注意を払
って作業しても、非メッキ面（例えば前記絶縁性樹脂面
）にメッキ膜が析出し易く、容易に、確実に、部分メッ
キが行えると言うものではない、非メッキ面に析出する
と抵抗値の低下やショートの原因になる。[Issues to be solved by the invention] It is difficult to perform partial plating using the conventional electroless plating method described above, and even if a skilled person works with great care, the non-plated surface A plating film is likely to precipitate on the insulating resin surface (for example, the insulating resin surface), and partial plating cannot be easily and reliably performed.If the plating film is deposited on a non-plated surface, it may cause a decrease in resistance value or a short circuit.
金属キャップを用いず、抵抗値の高い皮膜を用いた抵抗
器は、抵抗体素子端子部の抵抗値が高（、従来の回転バ
レルによる電解メッキを施すと、端子部のメッキ膜の析
出が疎らに成り、そのままその上に半田メッキを施して
も、半田の析出が疎らに成って、半田づけ強度が弱い、
更にメッキ時間を延長して疎らにならないようにすると
、メッキ時間が数倍になって作業性を著しく損ねる。A resistor that does not use a metal cap and uses a high-resistance film has a high resistance value at the terminals of the resistor element (when electrolytic plating is performed using a conventional rotating barrel, the plating film deposits on the terminals is sparse). Even if solder plating is applied on top of it, the solder precipitation will be sparse and the soldering strength will be weak.
If the plating time is further extended to prevent the plating from becoming sparse, the plating time will increase several times, significantly impairing workability.
電流密度をあげて、析出速度を速める事は可能であるが
、析出速度をｉ過電流密度を越えて速くすると、過電流
現象によって、析出面が’１１＜なって強度が弱くなり
、また表面が不導体化して析出を損ねると言う別の問題
があり、従来の方法では、半田付は強度が強く、小型で
高抵抗値の抵抗器を提供する事が出来ないと言う課題が
あった。It is possible to increase the deposition rate by increasing the current density, but if the deposition rate is increased beyond the i overcurrent density, the overcurrent phenomenon will cause the deposition surface to become There is another problem in that the soldering becomes a non-conductor and impairs the precipitation, and in the conventional method, soldering is strong and it is not possible to provide a small resistor with a high resistance value.
本発明の目的は、抵抗値の高い皮膜を用いた抵抗器の端
子部に直接電解バレルメッキする事により、上記課題を
解消することが出来る皮膜抵抗器の製造方法を提供する
事にある。An object of the present invention is to provide a method for manufacturing a film resistor that can solve the above problems by directly performing electrolytic barrel plating on the terminal portion of the resistor using a film with a high resistance value.
［課題を解消する為の手段］
課題を解消する為の手段の要旨は、絶縁性担体の表面に
抵抗皮膜を形成し、前記皮膜の一部分を絶縁性被膜で被
覆し、他の部分を接続電極とした抵抗体素子と、被メッ
キ物の電気的接続を補助する為のメディアとを、陰極を
具備した回転バレルに入れて、陽極を具備したメッキ槽
内に浸漬し、前記回転バレルを回転さぜながら、陽極と
陰極間に電圧を印加し、抵抗体素子の接続電極部分に、
低抵抗金属を電気バレルメッキする方法に於いて、前記
メディアの重量（Ｗｍ）が抵抗体素子の重量（Ｗｓ）以
上で、メディアの太さ（Ｄ ｔｎ ）が抵抗体素子の太
さ（Ｄｓ）の１．２倍以下であり、メディアの長さ（Ｌ
ｍ）が抵抗体素子の長さ（Ｌｓ）の２倍以下で且つメデ
ィアの太さ（Ｄｍ）以上である事を特徴とする皮膜抵抗
器の製造方法である。[Means for solving the problem] The gist of the means for solving the problem is to form a resistive film on the surface of an insulating carrier, cover a part of the film with an insulating film, and cover the other part with a connecting electrode. The resistor element and the media for assisting the electrical connection of the object to be plated are placed in a rotating barrel equipped with a cathode, immersed in a plating bath equipped with an anode, and the rotating barrel is rotated. At the same time, a voltage is applied between the anode and the cathode, and the connection electrode part of the resistor element is
In the method of electro-barrel plating of low resistance metal, the weight (Wm) of the media is greater than or equal to the weight (Ws) of the resistor element, and the thickness (D tn ) of the media is the thickness (Ds) of the resistor element. It is less than 1.2 times the media length (L
m) is less than twice the length (Ls) of the resistor element and greater than or equal to the thickness (Dm) of the media.
［作 用］
回転バレルメッキは、被メッキ物とメディアとをバレル
内に混在させて回転させながらメッキする方法であり、
被メッキ物とメディアとが比較的大きいと、均一に分散
した状態でも、それらの間にメッキ液が浸透してメッキ
は容易に出来るが、これらが小物になると、混在したま
まバレル内で塊状になり、メッキする事が困難になる。[Operation] Rotating barrel plating is a method in which the object to be plated and the media are mixed in the barrel and plated while rotating.
If the object to be plated and the media are relatively large, the plating solution will penetrate between them and plating will be easy even if they are evenly dispersed. However, if the objects are small, they will remain mixed together and form a lump inside the barrel. This makes plating difficult.
抵抗体皮膜の一部を絶縁性被膜で被覆した抵抗体素子と
、前記条件のメディアとを、電比で１０対１から１対２
程度の割合で、回転バレルに入れて電気メッキを施すと
、絶縁性被膜で被覆されていない抵抗体皮膜部分に、前
記条件のメディアを介して陰極とより多く接触するよう
になる。A resistor element whose resistor film is partially covered with an insulating film and the media under the above conditions are mixed at an electric ratio of 10:1 to 1:2.
When electroplating is performed in a rotating barrel at a certain rate, the portion of the resistor film not covered with the insulating film comes into contact with the cathode through the medium under the above conditions.
バレルの回転に伴って、塊状の最下層が回転バレルの内
壁に沿って持ち上げられ、更にバレルが回転すると塊状
の上層を転がりながら落ちる。As the barrel rotates, the bottom lumpy layer is lifted along the inner wall of the rotating barrel, and as the barrel rotates further, it rolls down the top layer.
この際１ｌｉｆｆｌ差により、被メッキ物とメディアと
が混在しながらも塊状上層部分に被メッキ物が比較的多
く存在するようになる。At this time, due to the 1 liffl difference, although the objects to be plated and the media are mixed, a relatively large amount of objects to be plated are present in the blocky upper layer portion.
更にバレルが回転すると、塊状がバレル壁に当たり被メ
ッキ物の上にメディアが乗り上げ塊状の底部に移動する
。As the barrel rotates further, the block hits the barrel wall, the media rides on the object to be plated, and moves to the bottom of the block.
このような動きを謹り返して塊状は順次循環する。Respectfully repeating this movement, the lumps circulate one after another.
上記条件のメディアを用いると塊状の周縁部分に被メッ
キ物が比較的多く存在したまま循環を縁り返す、塊状の
上層で最も析出速度が早く、次ぎに早いのは最下層で、
上層の数分の一程度の析出速度であり、塊状の内部は最
も析出速度が遅く、上層の析出速度より一桁程度遅い。When the media under the above conditions is used, the circulation is repeated while a relatively large amount of the material to be plated remains on the peripheral edge of the block, and the precipitation rate is fastest in the upper layer of the block, followed by the lowest layer.
The precipitation rate is about a fraction of that of the upper layer, and the precipitation rate inside the block is the slowest, about an order of magnitude slower than the precipitation rate of the upper layer.
このようなバレル内の被メッキ物とメディアとの動きが
ＷｓがＷｍ以下の時、被メッキ物が塊状の上層部に多く
滞在し、且つ適量のメディアが混在し、塊状の内部には
メディアが比較的多く存在する状態を横或し、被メッキ
物に効率よく、メッキが施されるからである。When the movement between the object to be plated and the media inside the barrel is Ws less than Wm, the object to be plated will mostly stay in the upper layer of the block, and an appropriate amount of media will be mixed, and the media will not be inside the block. This is because the object to be plated can be plated efficiently, even though there is a relatively large amount of plating.
ＷｓがＷｍより重い場合は前記状ｙフが得られず、メデ
ィアが上層部に多く存在し、最も析出速度の早い上層部
に被メッキ物が少なく、最も析出速度の遅い塊状の内部
に被メッキ物が多く存在するようになり、好ましくない
。If Ws is heavier than Wm, the above-mentioned condition cannot be obtained, and there is a large amount of media in the upper layer, less material to be plated in the upper layer where the deposition rate is fastest, and the object to be plated is inside the block where the deposition rate is slowest. There will be a lot of things, which is not good.
又、Ｄｍが！、２Ｄｓ以下としたのは、メディアの太さ
が被メッキ物の太さの１．２倍より太くなると、メディ
アと被メッキ物との接触状態が悪く。Also, DM! , 2Ds or less is because when the thickness of the media becomes thicker than 1.2 times the thickness of the object to be plated, the contact condition between the media and the object to be plated becomes poor.
電気的接続が不確実になり、メッキ膜の析出が不安定に
なり、析出されない部分が存在するようにな−）て好ま
しくないからであり、前記条件に於いては、メディアと
被メッキ物との接触状態が良く、電気的接続が確実にな
り、メッキ膜の析出が安定して均一になり好ましい。This is because the electrical connection becomes uncertain, the deposition of the plating film becomes unstable, and there are areas where no deposition occurs, which is undesirable. This is preferable because the contact state is good, the electrical connection is reliable, and the plating film is deposited stably and uniformly.
Ｌｍが２Ｌｓ以下としたのは、メディアの長さが被メッ
キ物の長さに対して、２倍以上長くなると、メディアと
被メッキ物との混在状態が悪く１回転バレル内でメディ
アと被メッキ物とが分離して、電気的接続が不確実にな
り、メッキ膜の析出が不安定になり、析出されない部分
が存在するようになって好ましくない。The reason why Lm is set to 2Ls or less is that if the length of the media is more than twice the length of the object to be plated, the mixture of the media and the object to be plated will be poor and the media and the object to be plated will be mixed up in one rotation of the barrel. This is undesirable because the particles separate from each other, making the electrical connection unreliable, making the deposition of the plating film unstable, and leaving some areas where the plating film is not deposited.
２倍以下の場合は、メディアと被メッキ物との混在状態
が良く、被メッキ物の電気的接続が容易に行われ、メッ
キ膜の析出が容易になり好ましい。If it is less than 2 times, it is preferable because the media and the object to be plated are mixed well, the electrical connection of the object to be plated is easily performed, and the plating film is easily deposited.
ＤｍがＬｍ以下としたのは、メディアの長さが太さより
小さくなると、メディアの転がりが悪く、メディアと被
メッキ物との接触状態が悪く、電気的接続が不確実にな
り、メッキ膜の析出が不安定になり、析出されない部分
が存在するようになって好ましくない、前記条件にｊＩ
会いては、メディアと被メッキ物との接触状態が良く、
電気的接続が確実になり、メッキ膜の析出が安定１−て
均一になり好ましい。The reason why Dm is set to be less than Lm is because if the length of the media is smaller than the thickness, the rolling of the media will be poor, the contact between the media and the object to be plated will be poor, the electrical connection will be uncertain, and the deposition of the plating film will occur. jI under the above conditions, which is unfavorable because it becomes unstable and there are parts that are not precipitated
When meeting, the contact between the media and the object to be plated is good.
Electrical connection is ensured, and the plating film is deposited stably and uniformly, which is preferable.
以下実施例により説明する。This will be explained below using examples.
［実施例−１］
直径１−０ｍｍ、長さ１．６ｍｍの柱状アルミナ製磁器
担体の全表面に、Ｎｉ−Ｃｒをスパッタリング法によっ
て、金属皮膜抵抗膜が形成され、該抵抗体素子の両端面
間の抵抗値は１．５にΩであり、該抵抗体素子のほぼ中
央部分の周面に、スパイラル状の切講を形成し、抵抗体
素子の両周端縁問が、１５０にΩの抵抗値に調整され、
前記抵抗体素子の周面に、絶縁性の樹脂塗料を塗布し、
硬化させ、保護膜が形成された抵抗体素子を用意した。[Example-1] A metal film resistive film was formed on the entire surface of a columnar alumina ceramic carrier having a diameter of 1-0 mm and a length of 1.6 mm by sputtering Ni-Cr, and both end surfaces of the resistor element were coated with a metal film resistive film. The resistance value between the ends is 1.5Ω, and a spiral cutout is formed on the circumferential surface of the resistor element at approximately the center, and the resistance value between both peripheral edges of the resistor element is 150Ω adjusted to the resistance value,
Applying an insulating resin paint to the peripheral surface of the resistor element,
A resistor element on which a protective film was formed by curing was prepared.
この抵抗体素子の重量は３−１４ｍｇであった。更に、
直径１．０ｍｍ、長さ１−６ｍｍの柱状鉄製メディアを
用意した。The weight of this resistor element was 3-14 mg. Furthermore,
Columnar iron media with a diameter of 1.0 mm and a length of 1 to 6 mm were prepared.
このメディアの重量は（１８８ｍｇであったこれらの用
意とは別に、電気バレルメッキ装置を用怠しな。The weight of this media was 188 mg.Apart from these preparations, the electrolytic barrel plating equipment was not used.
電気バレルメッキ装置のメッキ槽内に、市販のニッケル
電気メッキ浴（ワット浴）を満たした。A commercially available nickel electroplating bath (Watt bath) was filled in the plating tank of an electric barrel plating device.
電気バレルメッキ装置の回転バレル（容積４ ｎ ）に
前記抵抗体素子を嵩５００ｃｃと、前記メディアを嵩２
００ｃｃとを入れ、バレルを回転した。The resistor element has a volume of 500 cc and the media has a volume of 2 n in a rotating barrel (volume 4 n ) of an electric barrel plating device.
00cc and rotated the barrel.
バレルを回転させながら、陰極と陽極間に０．３Ａ ／
ｄ ｍ ”の電流を９０分間流し続けて、Ｎｉメッキ
膜を抵抗体素子の両層端縁に析出させた。While rotating the barrel, connect 0.3A/2 between the cathode and anode.
A current of d m '' was continued to flow for 90 minutes to deposit a Ni plating film on the edges of both layers of the resistor element.
析出されたＮｉメッキ膜は平均４．３μｍの厚みであっ
た。The deposited Ni plating film had an average thickness of 4.3 μm.
更に、市販の半田メッキ浴（フェノールスルポン酸浴、
Ｓ ｎ ／ Ｐ ｂ ＝ ９０ ／ １０ ）を用いて
、上記Ｎｉメッキ膜上に、Ｎｉメッキに引き続き電気メ
ッキを施して３μｍの厚みに半田を形成した。Furthermore, commercially available solder plating baths (phenol sulfonic acid bath,
After the Ni plating, electroplating was performed on the Ni plating film to form solder to a thickness of 3 μm.
この様な抵抗体素子を、予め用意したアルミナ基板上に
、Ａｇ −Ｐｄ導電ペーストをスクリーン印刷し、焼き
付けた導体ランドに、半田ペーストを塗布し、その上に
前記抵抗体素子を配置し、リフローして半田付けしな。Such a resistor element is screen printed with Ag-Pd conductive paste on an alumina substrate prepared in advance, solder paste is applied to the baked conductor land, the resistor element is placed on top of the solder paste, and reflow is performed. Then solder it.
抵抗体素子の軸方向と直角方向で、Ｊ！ｉ板の面と平行
方向に、プッシュプルゲージ先端を掛けて引っ張り、抵
抗体素子が基板から剥離する時の力を読みとって、半田
付は強度とした。In the direction perpendicular to the axial direction of the resistor element, J! The strength of the soldering was determined by pulling the tip of a push-pull gauge in a direction parallel to the surface of the i-board and reading the force when the resistor element peeled off from the board.
１００個の半田付は強度測定の結果、最も弱いものの値
は、２．３Ｋｇであった。As a result of measuring the strength of 100 pieces of soldering, the value of the weakest one was 2.3 kg.
［実施例−２コ
実施例−１に於いて、直径１−０ｍｍ長さ１．６ｍｍの
柱状鉄製メディアに代えて、同形同寸のアルミナ磁器の
表面に無電解ニッケルを形成して、表面を導体化しなｆ
ｆｌ址、３−２ｍｇのメディアを用いた以外は実施例−
１と同様に行った結果、最も弱いものの値は＋ ２．０
Ｋｇであった。[Example 2] In Example 1, instead of the columnar iron media with a diameter of 1-0 mm and a length of 1.6 mm, electroless nickel was formed on the surface of alumina porcelain of the same shape and size. Do not make f into a conductor.
Example except that 3-2 mg of media was used.
As a result of performing the same procedure as in 1, the value of the weakest one is +2.0
It was kg.
［実施例−３１
実施例−１に於いて、直径１−０ｍｍ長さ１．６ｍｍの
柱状鉄製メディアに代えて、同形同寸の鉛製メディアで
重量、ｌｉ ２５ｍｇのメディアを用いた事態外は実施
例−１と同様に行った結果、最も弱いものの値は、：ｌ
ＩＫｇであった。[Example 31 In Example 1, instead of the columnar iron media with a diameter of 1-0 mm and a length of 1.6 mm, a lead media of the same shape and size with a weight of 25 mg Li was used. was carried out in the same manner as in Example-1, and the weakest value was: l
It was Ikg.
［実施例−４］
実施例−１に於いて、直径１．０ｍｍ長さ１．６ｍｍの
柱状鉄製メディアに代えて、直径０．８ｍｍ、長さ（１
８ｍｍの柱状鉛製メディアで重量、４−５６ｍｇのメデ
ィアを用いた以外は実施例−１と同様に行った結果、最
も弱いものの値は、２．０Ｋｇであった。[Example-4] In Example-1, instead of the columnar iron media with a diameter of 1.0 mm and a length of 1.6 mm, a columnar iron media with a diameter of 0.8 mm and a length of (1.0 mm) was used.
The same procedure as in Example 1 was carried out except that 8 mm columnar lead media with a weight of 4 to 56 mg was used. As a result, the value of the weakest one was 2.0 kg.
［実施例−５］
実施例−１に於いて、直径１．０ｍｍ長さ１．６ｍｍの
柱状鉄製メディアに代えて、直径１．０ｍｍ、長さ３−
Ｏｍｍの柱状鉄製メディアで重量、８．１ｍｇのメデ
ィアを用いた以外は、実施例−１と同様に行った結果、
最も弱いものの値は、２−２Ｋｇであった。[Example-5] In Example-1, instead of the columnar iron media with a diameter of 1.0 mm and a length of 1.6 mm, a media with a diameter of 1.0 mm and a length of 3 mm was used.
The results were obtained in the same manner as in Example-1, except that 8.1 mg of columnar iron media of 0 mm was used.
The value of the weakest one was 2-2Kg.
［実施例−６１
実施例−１に於いて、直径Ｌ Ｏｍｍ長さ１．６ｍｍの
柱状鉄製メディアに代えて、直径０．５ｍｍ、長さ１．
６ｍｍの柱状鉛製メディアで重量、３−５６ｍｇのメデ
ィアを用いた以外は実施例−１と同様に行った結果、最
も弱いものの値は、２．０Ｋｇであった。[Example-61 In Example-1, instead of the columnar iron media with a diameter of L Omm and a length of 1.6 mm, a columnar iron media with a diameter of 0.5 mm and a length of 1.0 mm was used.
The same procedure as in Example 1 was carried out except that a 6 mm columnar lead media with a weight of 3 to 56 mg was used. As a result, the value of the weakest one was 2.0 kg.
［実施例−７１
実施例−１に於いて、直径１．０ｍｍ長さ１．６ｍｍの
柱状鉄製メディアに代えて、直径１０ｍｍの球状鉄製メ
ディアで重量、４．１１ｍｇのメディアを用いた以外は
実施例−１と同様に行った結果、最も弱いものの値は、
’１５Ｋｇであった。[Example-71 In Example-1, except that instead of the columnar iron media with a diameter of 1.0 mm and a length of 1.6 mm, spherical iron media with a diameter of 10 mm and a weight of 4.11 mg were used. As a result of carrying out the same procedure as in Example-1, the value of the weakest one is:
'It was 15 kg.
［比較例−１コ
実施例−１に於いて、直径１．０ｍｍ長さ１．６ｍｍの
柱状鉄製メディアに代えて、ニッケルメッキ膜によって
表面を導体化した直径１、Ｏｍｍの球状アルミナ製で重
量、１− Ｏｍｇのメディアを用いた以外は実施例−１
と同様に行った結果、最も弱いものの値は、１．０Ｋｇ
であった。[Comparative Example-1] In Example-1, instead of the columnar iron media with a diameter of 1.0 mm and a length of 1.6 mm, a spherical alumina media with a diameter of 1.0 mm and a weight of 1 Omm and whose surface was made conductive with a nickel plating film was used. , Example-1 except that 1-Omg media was used.
As a result, the value of the weakest one was 1.0Kg.
Met.
［比較例−２］
実施例−１に於いて、直径１．０ｍｍ長さ１．６ｍｍの
柱状鉄製メディアに代えて、ニッケルメッキ膜によって
表面を導体化した直径１−０ｍｍ、長さ４− Ｏｍｍの
柱状アルミナ製で重量、７，８５ｍｇのメディアを用い
た以外は実施例−１と同様に行った結果、最も弱いもの
の値は１．１Ｋｇであった。[Comparative Example-2] In Example-1, instead of the columnar iron media with a diameter of 1.0 mm and a length of 1.6 mm, a media with a diameter of 1-0 mm and a length of 4-0 mm whose surface was made conductive with a nickel plating film was used. The procedure was carried out in the same manner as in Example 1 except that the media was made of columnar alumina and weighed 7.85 mg. As a result, the value of the weakest one was 1.1 kg.
［比較例−３１
実施例−１に於いて、直径１０ｍｍ長さ１．６ｍｍの柱
状鉄製メディアに代えて、ニッケルメッキ膜によって表
面を導体化した直径’１１０ｍｍ、長さ１．６ｍｍの板
状アルミナ製のメディアで重量、１２−５６ｍｇのメデ
ィアを用いた以外は、実施例−１と同様に行った結果、
最も弱いものの値は、０．８Ｋｇであった。[Comparative Example-31 In Example-1, instead of the columnar iron media with a diameter of 10 mm and a length of 1.6 mm, a plate-shaped alumina with a diameter of 110 mm and a length of 1.6 mm whose surface was made conductive with a nickel plating film was used. The results were obtained in the same manner as in Example 1, except that the media weighed 12-56 mg.
The value of the weakest one was 0.8Kg.
［発明の効果］
本発明によれば、金属キャップを用いず、抵抗値の高い
皮膜を用いた抵抗器の端子部に、回転バレルによる電解
メッキを施す事が可能になり、端子部の“半田伸び”が
なく、メッキ膜の析出が均一に成り、更にその上に施さ
れる半田メッキも、半田の析出が均一に成って、半田づ
け強度が強く、小型で高抵抗値の抵抗体を提供する事が
出来、信頼性が高く、小型で高抵抗値の抵抗体を、提供
する事が出来る効果は大きい。[Effects of the Invention] According to the present invention, it is possible to perform electrolytic plating using a rotating barrel on the terminal portion of a resistor using a film with a high resistance value without using a metal cap. There is no stretching, the plating film is deposited uniformly, and the solder plating applied on top of it is also deposited uniformly, providing strong soldering strength and a small, high-resistance resistor. The effect of being able to provide a highly reliable, small-sized, high-resistance resistor is significant.
Claims (1)
分を絶縁性被膜で被覆し、他の部分を接続電極とした抵
抗体素子と、被メッキ物の電気的接続を補助する為のメ
ディアとを、陰極を具備した回転バレルに入れて、陽極
を具備したメッキ槽内に浸漬し、前記回転バレルを回転
させながら、陽極と陰極間に電圧を印加し、抵抗体素子
の接続電極部分に、低抵抗金属を電気バレルメッキする
方法に於いて、前記メディアの重量（Ｗｍ）が抵抗体素
子の重量（Ｗｓ）以上で、太さ（Ｄｍ）が抵抗体素子の
太さ（Ｄｓ）の１．２倍以下であり、長さ（Ｌｍ）が抵
抗体素子の長さ（Ｌｓ）の２倍以下で且つメディアの太
さ（Ｄｍ）以上である事を特徴とする皮膜抵抗器の製造
方法。A resistor element in which a resistive film is formed on the surface of an insulating carrier, a part of the film is covered with an insulating film, and the other part is used as a connection electrode, and a medium for assisting electrical connection of the object to be plated. is placed in a rotating barrel equipped with a cathode and immersed in a plating tank equipped with an anode, and while rotating the rotating barrel, a voltage is applied between the anode and the cathode, and the connected electrode portion of the resistor element is , in a method of electro-barrel plating a low-resistance metal, the weight (Wm) of the medium is greater than or equal to the weight (Ws) of the resistor element, and the thickness (Dm) is 1 of the thickness (Ds) of the resistor element. A method for manufacturing a film resistor, characterized in that the length (Lm) is at most twice the length (Ls) of the resistor element and at least the thickness (Dm) of the media.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19955088A JPH0247803A (en) | 1988-08-10 | 1988-08-10 | Manufacture of film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19955088A JPH0247803A (en) | 1988-08-10 | 1988-08-10 | Manufacture of film resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0247803A true JPH0247803A (en) | 1990-02-16 |
Family
ID=16409692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19955088A Pending JPH0247803A (en) | 1988-08-10 | 1988-08-10 | Manufacture of film resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0247803A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006188725A (en) * | 2005-01-04 | 2006-07-20 | Tdk Corp | Dummy medium for barrel plating and barrel plating method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62235498A (en) * | 1986-04-04 | 1987-10-15 | Rohm Co Ltd | Barrel plating method for electronic parts |
-
1988
- 1988-08-10 JP JP19955088A patent/JPH0247803A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62235498A (en) * | 1986-04-04 | 1987-10-15 | Rohm Co Ltd | Barrel plating method for electronic parts |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006188725A (en) * | 2005-01-04 | 2006-07-20 | Tdk Corp | Dummy medium for barrel plating and barrel plating method |
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