JPH0246666B2 - - Google Patents
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- Publication number
- JPH0246666B2 JPH0246666B2 JP62304029A JP30402987A JPH0246666B2 JP H0246666 B2 JPH0246666 B2 JP H0246666B2 JP 62304029 A JP62304029 A JP 62304029A JP 30402987 A JP30402987 A JP 30402987A JP H0246666 B2 JPH0246666 B2 JP H0246666B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- vacuum
- evaporation
- thin film
- evaporation sources
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000000758 substrate Substances 0.000 claims description 51
- 238000001704 evaporation Methods 0.000 claims description 38
- 230000008020 evaporation Effects 0.000 claims description 37
- 239000010409 thin film Substances 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 11
- 238000005192 partition Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 8
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明はは、真空蒸着法或は分子線エピタキシ
ー法等により、基板上に薄膜を形成する真空薄膜
形成装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a vacuum thin film forming apparatus for forming a thin film on a substrate by vacuum evaporation, molecular beam epitaxy, or the like.
［従来の技術］
従来に於ける一般的な真空薄膜形成装置の構成
を、第３図に示した真空蒸着装置を例に説明す
る。真空槽１の中に、薄膜の原料を蒸発させる蒸
発源２，３と、この蒸発源に向けて基板５を装着
する基板ホルダ４とが設置されている。蒸発源
２，３は例えば、電子銃を備え、坩堝の中に蒸発
材料に電子線を照射して蒸発させる、いわゆる電
子衝撃型の蒸発源２や、クヌードセンセル等、抵
抗加熱型の蒸発源３等が用いられ、これらの周囲
は、何れもシユラウドと呼ばれる液体窒素等の冷
媒を用いた冷却器６で囲まれる。[Prior Art] The configuration of a conventional general vacuum thin film forming apparatus will be explained using a vacuum evaporation apparatus shown in FIG. 3 as an example. In the vacuum chamber 1, evaporation sources 2 and 3 for evaporating thin film raw materials and a substrate holder 4 for mounting a substrate 5 facing the evaporation sources are installed. The evaporation sources 2 and 3 are, for example, a so-called electron impact type evaporation source 2 that is equipped with an electron gun and evaporates the evaporation material by irradiating the evaporation material with an electron beam in a crucible, or a resistance heating type evaporation source such as a Knudsen cell. A source 3 and the like are used, and these are all surrounded by a cooler 6 called a shroud, which uses a refrigerant such as liquid nitrogen.
前記真空槽１にはロードロツク室（試料準備
室）と呼ばれる補助真空槽７が設けられ、ここか
らトランスフアーロツド８により基板５を導入
し、これを基板ホルダ４に装着する。また同様に
して、ここから基板５を真空槽１の外側に取り出
す。 The vacuum chamber 1 is provided with an auxiliary vacuum chamber 7 called a load lock chamber (sample preparation chamber), from which a substrate 5 is introduced by a transfer rod 8 and mounted on the substrate holder 4. Similarly, the substrate 5 is taken out from here to the outside of the vacuum chamber 1.
こうした真空装置に於て、基板５に薄膜を形成
するときは、真空槽１を10-9Torr程度の気圧に
まで減圧し、蒸発源２，３から蒸発材料を基板５
へ向けて蒸発させ、これを基板５の表面に被着
し、成膜させる。 In such a vacuum apparatus, when forming a thin film on the substrate 5, the pressure in the vacuum chamber 1 is reduced to about 10 -9 Torr, and the evaporation material is transferred from the evaporation sources 2 and 3 to the substrate 5.
This is applied to the surface of the substrate 5 to form a film.
［発明が解決しようとする問題点］
前記従来の真空薄膜形成装置において、成膜物
質が被着する基板５の表面の周囲の雰囲気或は物
理的な状態は、その基板５が置かれた真空槽１の
中の雰囲気或は物理的な状態に依存し、真空槽１
と独立して、その周囲の雰囲気や物理的な状態を
任意に形成することが困難であつた。即ち、真空
蒸着法や分子線エピタキシー法では、蒸発源２，
３の周囲に高い真空度を必要とし、従つて、真空
槽１を一体の空間で形成している従来のもので
は、基板５の表面も必然的にこうした高真空状態
下に置かれる。[Problems to be Solved by the Invention] In the conventional vacuum thin film forming apparatus, the atmosphere or physical state around the surface of the substrate 5 to which the film forming substance is deposited is the same as the vacuum on which the substrate 5 is placed. Depending on the atmosphere or physical conditions in the chamber 1, the vacuum chamber 1
It has been difficult to arbitrarily shape the surrounding atmosphere and physical state independently of the That is, in the vacuum evaporation method and the molecular beam epitaxy method, the evaporation source 2,
Accordingly, in the conventional system in which the vacuum chamber 1 is formed in an integral space, the surface of the substrate 5 is also necessarily placed under such a high vacuum state.
このため例えば、特定のガス雰囲気中で、基板
５に被着した成膜物質をアニーリングし、反応さ
せる場合に、基板５を真空槽１の中に置いたまま
ではこれを行なうことができず、前記補助真空槽
７等に基板５を一旦待避させてから行なわなけれ
ばならない。しかし、これでは蒸着からアニーリ
ングまでに時間と手数がかかるという欠点があ
る。また同様にして、基板５に被着した成膜物質
をプラズマ中で反応させたり、或はCVD法を用
いて薄膜を気相成長させる場合、やはり基板５
を、一旦こうした状態を形成することができる別
の槽に移してから行なわなければならなかつた。 For this reason, for example, when a film-forming substance deposited on the substrate 5 is annealed and reacted in a specific gas atmosphere, this cannot be done while the substrate 5 is placed in the vacuum chamber 1. This must be carried out after the substrate 5 is temporarily evacuated to the auxiliary vacuum chamber 7 or the like. However, this has the disadvantage that it takes time and effort from vapor deposition to annealing. Similarly, when reacting a film-forming substance deposited on the substrate 5 in plasma or growing a thin film in a vapor phase using the CVD method, the substrate 5
had to be carried out after being transferred to another tank in which such conditions could be formed.
本発明は、前記従来の問題点を解決することを
目的とする。 The present invention aims to solve the above-mentioned conventional problems.
［問題を解決するための手段］
即ち、前記本発明の目的は、真空槽１１内に蒸
発源１２，１３と、この蒸発源１２，１３へ向け
て基板１５を装着した真空薄膜形成装置に於て、
基板１５の前面側に、その周囲を囲む隔壁２６を
形成すると共に、前記蒸発源１２，１３から基板
表面に至る成膜物質の照射経路上に、前記蒸発源
１２，１３から発射された成膜物質の分子が通過
する貫通孔２８を有するオリフイス２７を配置
し、これらオリフイス２７と前記隔壁２６とによ
り、基板１５の表面を含む小空間２１を区画して
成ることを特徴とする真空薄膜形成装置により達
成できる。[Means for Solving the Problem] That is, the object of the present invention is to provide a vacuum thin film forming apparatus in which evaporation sources 12 and 13 are provided in a vacuum chamber 11 and a substrate 15 is mounted facing the evaporation sources 12 and 13. hand,
A partition wall 26 is formed on the front side of the substrate 15 to surround the periphery of the substrate 15, and the film-forming material emitted from the evaporation sources 12, 13 is placed on the irradiation path of the film-forming material from the evaporation sources 12, 13 to the substrate surface. A vacuum thin film forming apparatus characterized in that an orifice 27 having a through hole 28 through which molecules of a substance pass is arranged, and a small space 21 including the surface of a substrate 15 is divided by the orifice 27 and the partition wall 26. This can be achieved by
［作用］
前記真空薄膜形成装置では、基板１５表面を含
む小空間２１が隔壁２６とオリフイス２７によつ
て、真空槽１１から区画されているため、真空槽
１１と独立して同基板１５の表面の周囲の雰囲気
或は物理的状態を独自に形成することができる。
例えば、前記小空間２１にのみ特定のガスを導入
したり、さらにその中に電場を形成してプラズマ
状態とすることができる。[Function] In the vacuum thin film forming apparatus, since the small space 21 containing the surface of the substrate 15 is separated from the vacuum chamber 11 by the partition 26 and the orifice 27, the surface of the substrate 15 can be formed independently from the vacuum chamber 11. can uniquely create the atmosphere or physical state around it.
For example, it is possible to introduce a specific gas only into the small space 21 or to create a plasma state by creating an electric field therein.
他方、蒸発源１２，１３から発射される成報物
質の分子は、オリフイス２７に形成された貫通孔
２８を通して基板１５の表面に被着させることが
できる。 On the other hand, molecules of the reporting substance emitted from the evaporation sources 12 and 13 can be deposited on the surface of the substrate 15 through the through hole 28 formed in the orifice 27.
従つて、基板１５表面に成膜物質を被着させた
直後、或はそれと同時に、特定ガス雰囲気、或は
特定な物理的な状態の下で被着した物質を反応さ
せることも可能になる。 Therefore, immediately after depositing the film-forming substance on the surface of the substrate 15, or at the same time, it becomes possible to cause the deposited substance to react in a specific gas atmosphere or under specific physical conditions.
［実施例］
次ぎに、本発明を真空蒸着装置に適用した第１
図を参照しながら、本発明の実施例とその望まし
い実施態様について説明する。[Example] Next, a first example in which the present invention is applied to a vacuum evaporation apparatus will be described.
Examples and preferred embodiments of the present invention will be described with reference to the drawings.
真空槽１１は隔壁１７によつて蒸発源室１９と
基板室２０側の２つの部屋に仕切られ、前者の蒸
発源室１９には蒸発源１２，１３が、後者の基板
室２０には基板ホルダ１４が導入される。この真
空槽１１には少くとも前記蒸発源室１９側に減圧
手段としての真空ポンプ（図示せず）を連結する
が、真空ポンプはできるだけ蒸発源室１９と基板
室２０との双方に接続するのが望ましい。 The vacuum chamber 11 is partitioned by a partition wall 17 into two chambers: an evaporation source chamber 19 and a substrate chamber 20. The former evaporation source chamber 19 contains evaporation sources 12 and 13, and the latter substrate chamber 20 contains a substrate holder. 14 is introduced. A vacuum pump (not shown) as a pressure reducing means is connected to this vacuum chamber 11 at least on the evaporation source chamber 19 side, but it is preferable to connect the vacuum pump to both the evaporation source chamber 19 and the substrate chamber 20 as much as possible. is desirable.
第１図の実施例に於て、蒸発源１２として、坩
堝に収納した蒸着材料に電子線を照射して蒸発さ
せる、いわゆる電子衝撃方式のものが示されてお
り、また蒸発源１３としては、クヌードセンセル
等、電気抵抗加熱により、蒸着材料を加熱、蒸発
させる形式のものが示されている。これら蒸発源
１２，１３は、シユラウドと呼ばれる冷却器１６
で囲まれていると共に、その蒸気発射経路上に各
シヤツタ２３が設けられている。 In the embodiment shown in FIG. 1, the evaporation source 12 is a so-called electron impact method in which the evaporation material stored in a crucible is irradiated with an electron beam to evaporate it, and the evaporation source 13 is as follows. A type of vapor deposition material is heated and evaporated by electrical resistance heating, such as a Knudsen cell. These evaporation sources 12 and 13 are connected to a cooler 16 called a shroud.
Each shutter 23 is provided on the steam ejection path.
前記隔壁１７の蒸発源１２，１３から基板１５
に至る蒸発経路上にゲートバルブ１８が設けら
れ、図示の実施例ではこのゲートバルブ１８が真
空槽１１の側方に設けられた駆動機構２５によつ
て開閉操作される。このゲートバルブ１８が開く
ことによつて、基板室２０と蒸発源室１９とが通
じると共に、蒸発源１２，１３から基板１５に至
る蒸着材料の蒸発経路が開放される。 From the evaporation sources 12 and 13 of the partition wall 17 to the substrate 15
A gate valve 18 is provided on the evaporation path leading to the vacuum chamber 11, and in the illustrated embodiment, the gate valve 18 is opened and closed by a drive mechanism 25 provided on the side of the vacuum chamber 11. By opening the gate valve 18, the substrate chamber 20 and the evaporation source chamber 19 communicate with each other, and the evaporation path of the evaporation material from the evaporation sources 12 and 13 to the substrate 15 is opened.
他方、基板ホルダ１４は、その下面に基板１５
を着脱自在に保持する。この基板１５の表面の周
囲は隔壁２６によつて囲まれていると共に、この
隔壁２６の下縁によつて囲まれた部分は、前記蒸
発源１２，１３から基板１５の表面に至る成膜物
質の照射経路となつており、ここがオリフイス２
７で閉じられている。これによつて、基板１５の
表面側は、真空槽１１の中で独立した小空間２１
として区画されている。 On the other hand, the substrate holder 14 has a substrate 15 on its lower surface.
can be attached and detached freely. The surface of the substrate 15 is surrounded by a partition wall 26, and the portion surrounded by the lower edge of the partition wall 26 is covered with film-forming material extending from the evaporation sources 12 and 13 to the surface of the substrate 15. This is the irradiation path for orifice 2.
It is closed at 7. As a result, the surface side of the substrate 15 has an independent small space 21 inside the vacuum chamber 11.
It is divided as.
前記オリフイス２７は、例えば第２図で示すよ
うに、多数の貫通孔２８を有し、これを通して蒸
発源１２，１３から基板１５表面への成膜物質の
照射を可能としている。さらに、成膜物質の分子
が基板１５に照射されるときは、この貫通孔２８
が耐えず移動するのが望ましい。具体的には、駆
動機構２５によつて前記オリフイス２７そのもの
を往復、回転させる。これによつて、基板１５の
表面に、成膜物質が一様に被着する。 The orifice 27 has a large number of through holes 28, as shown in FIG. 2, for example, through which the film-forming material can be irradiated from the evaporation sources 12 and 13 onto the surface of the substrate 15. Furthermore, when the molecules of the film-forming substance are irradiated onto the substrate 15, the through holes 28
It is desirable to move without being able to withstand it. Specifically, the orifice 27 itself is reciprocated and rotated by the drive mechanism 25. As a result, the film-forming substance is uniformly deposited on the surface of the substrate 15.
第１図に於て、２９は前記小空間２１に特定の
ガスを導入するガス導入系であり、ここから導入
したガスにより、前記小空間２１を希薄ガス雰囲
気にすることができる。さらに、別途電極に設け
るか、或は前記隔壁２６を電極として、小空間２
１に電場を形成することによつて、小空間２１を
プラズマ状態とすることもできる。３０は、基板
１５の背後に設置したヒータであり、これによつ
て基板１５を加熱し、その表面での反応を促進さ
せる。このヒータ３０は、密閉形とすることによ
り、真空槽１１は殆ど熱的影響を与えずに、基板
１５のみを加熱できる。 In FIG. 1, numeral 29 is a gas introduction system for introducing a specific gas into the small space 21, and the small space 21 can be made into a dilute gas atmosphere by the gas introduced from here. Furthermore, the small space 2 may be provided separately as an electrode or the partition wall 26 may be used as an electrode.
By forming an electric field in 1, the small space 21 can also be brought into a plasma state. Reference numeral 30 denotes a heater installed behind the substrate 15, which heats the substrate 15 and promotes the reaction on its surface. By making the heater 30 a closed type, the vacuum chamber 11 can heat only the substrate 15 with almost no thermal influence.
なお、以上の実施例では、真空薄膜形成装置の
例として、真空蒸着装置が示されているが、分子
線エピタキシー装置等でも、同様にして本発明を
実施することができるのは言うまでもない。 In the above embodiments, a vacuum evaporation apparatus is shown as an example of a vacuum thin film forming apparatus, but it goes without saying that the present invention can be carried out in the same manner with a molecular beam epitaxy apparatus or the like.
［発明の効果］
以上説明した通り、本発明によれば、真空槽１
１と独立して、基板１５の表面の雰囲気、物理的
状態等を形成、制御することができるため、基板
１５への成膜直後、或はそれと同時に必要な状態
を形成しながら、成膜物質のガス分子との反応が
可能になる等、従来不可能とされていた成膜条件
が容易に整備できる効果が得られる。[Effects of the Invention] As explained above, according to the present invention, the vacuum chamber 1
1, it is possible to form and control the atmosphere, physical state, etc. on the surface of the substrate 15, so that the deposition material can be controlled immediately after the film is formed on the substrate 15, or simultaneously while forming the necessary conditions. It is possible to achieve the effect that film-forming conditions, which were previously considered impossible, can be easily set up, such as making it possible to react with gas molecules.
第１図は本発明の実施例を示す薄膜形成装置の
縦断側面図、第２図は同実施例に於て使用される
オリフイス２７の一例を示す斜視図、第３図は従
来例を示す薄膜形成装置の縦断側面図である。
１１……真空槽、１２，１３……蒸発源、１４
……基板ホルダ、１５……基板、２１……小空
間、２６……隔壁、２７……オリフイス、２８…
…貫通孔。
FIG. 1 is a longitudinal sectional side view of a thin film forming apparatus showing an embodiment of the present invention, FIG. 2 is a perspective view showing an example of an orifice 27 used in the same embodiment, and FIG. 3 is a thin film forming apparatus showing a conventional example. FIG. 3 is a longitudinal side view of the forming device. 11... Vacuum chamber, 12, 13... Evaporation source, 14
... Substrate holder, 15 ... Substrate, 21 ... Small space, 26 ... Partition wall, 27 ... Orifice, 28 ...
...through hole.
Claims (1)
発源１２，１３へ向けて基板１５を装着した真空
薄膜形成装置に於て、基板１５の前面側に、その
周囲を囲む隔壁２６を形成すると共に、前記蒸発
源１２，１３から基板表面に至る成膜物質の照射
経路上に、前記蒸発源１２，１３から発射された
成膜物質の分子が通過する貫通孔２８を有するオ
リフイス２７を配置し、これらオリフイス２７と
前記隔壁２６とにより、基板１５の表面を含む小
空間２１を区画して成ることを特徴とする真空薄
膜形成装置。 ２ 特許請求の範囲第１項または第２項におい
て、前記オリフイス２７の貫通孔２８が耐えず移
動するものからなる真空薄膜形成装置。[Claims] 1. In a vacuum thin film forming apparatus in which evaporation sources 12 and 13 are placed in a vacuum chamber 11 and a substrate 15 is mounted facing the evaporation sources 12 and 13, a A through-hole 28 is provided on the irradiation path of the film-forming substance from the evaporation sources 12, 13 to the substrate surface, through which the molecules of the film-forming substance ejected from the evaporation sources 12, 13 pass. A vacuum thin film forming apparatus characterized in that a small space 21 including a surface of a substrate 15 is partitioned by orifices 27 having the above-described orifices 27 and the partition wall 26. 2. The vacuum thin film forming apparatus according to claim 1 or 2, wherein the through hole 28 of the orifice 27 is movable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30402987A JPH01147056A (en) | 1987-11-30 | 1987-11-30 | Vacuum thin film-forming apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30402987A JPH01147056A (en) | 1987-11-30 | 1987-11-30 | Vacuum thin film-forming apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01147056A JPH01147056A (en) | 1989-06-08 |
| JPH0246666B2 true JPH0246666B2 (en) | 1990-10-16 |
Family
ID=17928207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30402987A Granted JPH01147056A (en) | 1987-11-30 | 1987-11-30 | Vacuum thin film-forming apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01147056A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0266161A (en) * | 1987-12-04 | 1990-03-06 | Res Dev Corp Of Japan | Vacuum deposition device |
| US5077875A (en) * | 1990-01-31 | 1992-01-07 | Raytheon Company | Reactor vessel for the growth of heterojunction devices |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58153775A (en) * | 1982-03-08 | 1983-09-12 | Nippon Telegr & Teleph Corp <Ntt> | Preparation of thin film |
-
1987
- 1987-11-30 JP JP30402987A patent/JPH01147056A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58153775A (en) * | 1982-03-08 | 1983-09-12 | Nippon Telegr & Teleph Corp <Ntt> | Preparation of thin film |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01147056A (en) | 1989-06-08 |
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