JPH0245628U - - Google Patents
Info
- Publication number
- JPH0245628U JPH0245628U JP12498288U JP12498288U JPH0245628U JP H0245628 U JPH0245628 U JP H0245628U JP 12498288 U JP12498288 U JP 12498288U JP 12498288 U JP12498288 U JP 12498288U JP H0245628 U JPH0245628 U JP H0245628U
- Authority
- JP
- Japan
- Prior art keywords
- gas injection
- gas
- chamber
- electrode
- large number
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002347 injection Methods 0.000 claims description 16
- 239000007924 injection Substances 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims 11
- 239000012495 reaction gas Substances 0.000 claims 3
- 238000001020 plasma etching Methods 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 1
- 238000000992 sputter etching Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
第１図は本考案装置の一実施例を示す構成説明
図、第２図は第１図の−線矢視図、第３図は
本考案におけるガス注入板の要部の断面図、第４
図は本考案におけるガス注入板の一部の拡大断面
図、第５図は従来装置の一例を示す構成説明図、
第６図は従来装置の他例を示す構成説明図である
。
１……チヤンバ、２……アース側ガス注入電極
、３……ウエーハ載置側電極、４……ガス導入口
、５……排気口、６……ウエーハ、７……ガス注
入孔、８……溝穴、９……ガス注入板、１０……
（永久）磁石、１１……メクラ部材、１６……高
周波電源。
Fig. 1 is a configuration explanatory diagram showing one embodiment of the device of the present invention, Fig. 2 is a view taken along the - line in Fig. 1, Fig. 3 is a sectional view of the main part of the gas injection plate in the present invention, and Fig. 4
The figure is an enlarged sectional view of a part of the gas injection plate according to the present invention, and FIG. 5 is a configuration explanatory diagram showing an example of a conventional device.
FIG. 6 is a configuration explanatory diagram showing another example of the conventional device. 1...Chamber, 2...Ground side gas injection electrode, 3...Wafer mounting side electrode, 4...Gas inlet, 5...Exhaust port, 6...Wafer, 7...Gas injection hole, 8... ...Slot hole, 9...Gas injection plate, 10...
(Permanent) magnet, 11... blind member, 16... high frequency power supply.
Claims (1)
ウエーハ載置側電極３を対向して配設し、アース
側ガス注入電極２のガス導入口４より多数のガス
注入孔７を経て反応ガスをチヤンバ１内に導入し
、チヤンバ１の排気口５より排気すると共に、上
記両電極２，３間に高周波電圧ｅを印加してウエ
ーハ載置側電極３上のウエーハ６をイオンエツチ
ングするようにした装置において、上記アース側
ガス注入電極２の面に、ガス導入口４に連通する
多数のガス注入孔７とこの各ガス注入孔７に連通
する溝穴８とを有するガス注入板９を取付け、こ
のガス注入板９の各ガス注入孔７及び溝穴８の外
周部に磁石１０を埋設してなるリアクテイブイオ
ンエツチング装置。 (2) 多数のガス注入孔７を部分的にメクラ部材
１１で塞ぎ、反応ガスの注入領域を変更してエツ
チング速度の均一性を制御するようにした実用新
案登録請求の範囲第１項記載のリアクテイブイオ
ンエツチング装置。[Scope of Claim for Utility Model Registration] (1) A ground side gas injection electrode 2 and a wafer mounting side electrode 3 are arranged facing each other in the chamber 1, and a large number of A reaction gas is introduced into the chamber 1 through the gas injection hole 7 and exhausted through the exhaust port 5 of the chamber 1, and a high frequency voltage e is applied between the two electrodes 2 and 3 to cause the reaction gas to rise above the wafer mounting side electrode 3. In an apparatus for ion etching a wafer 6, a large number of gas injection holes 7 communicating with the gas introduction port 4 and a slot 8 communicating with each gas injection hole 7 are provided on the surface of the ground side gas injection electrode 2. This reactive ion etching device is constructed by attaching a gas injection plate 9 having a gas injection plate 9 and embedding magnets 10 in the outer periphery of each gas injection hole 7 and slot 8 of the gas injection plate 9. (2) A utility model according to claim 1, in which a large number of gas injection holes 7 are partially closed with blind members 11, and the reaction gas injection area is changed to control the uniformity of the etching rate. Reactive ion etching equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12498288U JPH0245628U (en) | 1988-09-22 | 1988-09-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12498288U JPH0245628U (en) | 1988-09-22 | 1988-09-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0245628U true JPH0245628U (en) | 1990-03-29 |
Family
ID=31375184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12498288U Pending JPH0245628U (en) | 1988-09-22 | 1988-09-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0245628U (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6046029A (en) * | 1983-08-24 | 1985-03-12 | Hitachi Ltd | Equipment for manufacturing semiconductor |
| JPS61226925A (en) * | 1985-04-01 | 1986-10-08 | Anelva Corp | Discharge reaction device |
| JPS62299031A (en) * | 1986-06-18 | 1987-12-26 | Nec Corp | Electrode structure of parallel plate etching system |
| JPS6317529A (en) * | 1986-07-09 | 1988-01-25 | Toshiba Corp | Etching device |
-
1988
- 1988-09-22 JP JP12498288U patent/JPH0245628U/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6046029A (en) * | 1983-08-24 | 1985-03-12 | Hitachi Ltd | Equipment for manufacturing semiconductor |
| JPS61226925A (en) * | 1985-04-01 | 1986-10-08 | Anelva Corp | Discharge reaction device |
| JPS62299031A (en) * | 1986-06-18 | 1987-12-26 | Nec Corp | Electrode structure of parallel plate etching system |
| JPS6317529A (en) * | 1986-07-09 | 1988-01-25 | Toshiba Corp | Etching device |
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