JPH0244317A - Liquid crystal display device with auxiliary capacity - Google Patents
Liquid crystal display device with auxiliary capacityInfo
- Publication number
- JPH0244317A JPH0244317A JP63194421A JP19442188A JPH0244317A JP H0244317 A JPH0244317 A JP H0244317A JP 63194421 A JP63194421 A JP 63194421A JP 19442188 A JP19442188 A JP 19442188A JP H0244317 A JPH0244317 A JP H0244317A
- Authority
- JP
- Japan
- Prior art keywords
- auxiliary
- liquid crystal
- capacity
- electrode
- auxiliary capacity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 3
- 239000003990 capacitor Substances 0.000 claims description 36
- 230000001681 protective effect Effects 0.000 claims 1
- 210000002858 crystal cell Anatomy 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 7
- 239000004020 conductor Substances 0.000 abstract description 5
- 238000010030 laminating Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は液晶表示装置の1助容量に係り、特に大きな容
量を得るのに好適な補助容量を有する液晶表示装置に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an auxiliary capacitor of a liquid crystal display device, and particularly to a liquid crystal display device having an auxiliary capacitor suitable for obtaining a large capacity.
液晶デイスプレィは、薄型低消費電力という特徴を有し
、最近小型TVとして製品化されている。Liquid crystal displays are characterized by being thin and low in power consumption, and have recently been commercialized as small TVs.
高精細化した場合、プロジェクタ−で投射拡大する用途
もある。この場合1強い光を使うため、光と熱でスイッ
チング素子のリーク電流が増加する。When high definition is achieved, there is also a use for projecting and enlarging images using a projector. In this case, 1. Since strong light is used, the leakage current of the switching element increases due to the light and heat.
また、熱により、液晶の抵抗も下がる。これらの理由か
ら、印加された電圧を保持するための補助容量が不可欠
となってくる。Heat also lowers the resistance of the liquid crystal. For these reasons, an auxiliary capacitor for holding the applied voltage becomes essential.
補助容量を形成する考え方は古いが、具体的な一例は特
開昭61−13228に述べられている。Although the idea of forming an auxiliary capacity is old, a specific example is described in Japanese Patent Laid-Open No. 13228-1983.
第4図及び第5図において従来例を説明する。A conventional example will be explained with reference to FIGS. 4 and 5.
第4図において、信号線1及び走査線2の各交互点にス
イッチング素子3が配置されており、ソース側には液晶
セル4、補助容量5が並列に接続されている。液晶セル
4は対向基板共通電極6とで構成されている。補助容量
5の他方の共通電極は補助導体7で接続され、電位が固
定されている。In FIG. 4, switching elements 3 are arranged at each alternating point of the signal line 1 and the scanning line 2, and a liquid crystal cell 4 and an auxiliary capacitor 5 are connected in parallel on the source side. The liquid crystal cell 4 is composed of a common electrode 6 on a counter substrate. The other common electrode of the auxiliary capacitor 5 is connected by an auxiliary conductor 7, and the potential is fixed.
第5図はスイッチング素子3及び補助容量5の部分の断
面図を示す、多結晶シリコンのゲート19と同時に、補
助容量用透明電極20を形成し、これを酸化してゲート
絶縁膜21と層間絶縁膜22を形成する。この上に再び
多結晶シリコンを形成し、信号電極1(ドレイン)、ソ
ース電極23、画素用透明電極24を形成する。こうし
て補助容量5が形成される。この例では画素用透明電極
241層間絶縁膜22.補助容量用透明電極20で一組
の容量が形成される。FIG. 5 shows a cross-sectional view of the switching element 3 and auxiliary capacitor 5. At the same time as the polycrystalline silicon gate 19, a auxiliary capacitor transparent electrode 20 is formed, and this is oxidized to form a gate insulating film 21 and an interlayer insulator. A film 22 is formed. Polycrystalline silicon is formed again on this, and the signal electrode 1 (drain), source electrode 23, and pixel transparent electrode 24 are formed. In this way, the auxiliary capacitor 5 is formed. In this example, a pixel transparent electrode 241, an interlayer insulating film 22. A set of capacitors is formed by the transparent electrode 20 for auxiliary capacitance.
上記従来例においては、単一の容量のみで補助容量が構
成されており、特に大きな容量とする場合には、大きな
補助容量を実現できない。In the above conventional example, the auxiliary capacitor is constituted by only a single capacitor, and a particularly large auxiliary capacitor cannot be realized when the capacitor is large.
本発明の目的は、大きな補助容量を形成する手段を提供
することにある。An object of the present invention is to provide a means for forming a large storage capacity.
上記目的は、複数の容量を積層して並列に接続すること
によって達成される。The above object is achieved by stacking a plurality of capacitors and connecting them in parallel.
本発明によって形成された大きな補助容量は。 A large storage capacity is formed by the present invention.
液晶セルに並列に接続される。したがって、スイッチン
グ素子あるいは液晶セルのリーク電流を十分補償し1画
質の信頼性を高めることができる。Connected in parallel to the liquid crystal cell. Therefore, the leakage current of the switching element or the liquid crystal cell can be sufficiently compensated for, and the reliability of one image quality can be improved.
以下本発明の実施例を第1図、第2図により説明する。 Embodiments of the present invention will be described below with reference to FIGS. 1 and 2.
第1図は本発明によるアクライブマトリクスの部分構成
を示す、信号線1.走査線2の交点にスイッチング素子
3が設けられており、ソース側には液晶セル4、補助容
量5が並列に接続されている。液晶セル4は対向基板共
通電極6とで構成されている。補助容量5は、ソース側
が2個の電極が並列された形で配置されており、他方の
共通電極は補助導体7で接続され、電位が固定されてい
る。FIG. 1 shows a partial configuration of an activate matrix according to the present invention, and shows signal lines 1. A switching element 3 is provided at the intersection of the scanning lines 2, and a liquid crystal cell 4 and an auxiliary capacitor 5 are connected in parallel on the source side. The liquid crystal cell 4 is composed of a common electrode 6 on a counter substrate. The auxiliary capacitor 5 has two electrodes arranged in parallel on the source side, and the other common electrode is connected by an auxiliary conductor 7, so that the potential is fixed.
第2図はスイッチング素子3及び補助容量5の部分の断
面図を示す、ガラス基板8に多結晶シリコン9を形成す
る。この後、補助容量5を形成する部分にはリンをドー
プしておく1次にゲート絶縁膜11.ゲート電極12を
形成する。この過程で、補助容量5には、補助容量用透
明電極10、補助容量用絶縁膜13.補助容量用共通電
極14が形成され、ここで、ひとつの容量が形成される
。FIG. 2 shows a cross-sectional view of the switching element 3 and auxiliary capacitor 5. Polycrystalline silicon 9 is formed on a glass substrate 8. As shown in FIG. Thereafter, the primary gate insulating film 11 is doped with phosphorus in the portion where the auxiliary capacitance 5 is to be formed. A gate electrode 12 is formed. In this process, the auxiliary capacitor 5 includes a auxiliary capacitor transparent electrode 10, an auxiliary capacitor insulating film 13. A common electrode 14 for auxiliary capacitance is formed, and one capacitance is formed here.
次に層間絶縁膜15を形成し、コンタクト窓を開けて、
画素用透明電極17を形成する。同一材料で信号電極1
(ドレイン電極)、ソース電極16、補助容量用の補助
導体7が形成される。この過程で、第2の容量が形成さ
れ、下に埋め込まれた容量と並列に接続される。このプ
ロセスで特に必要とされるのは、補助容量用透明電極1
0にドーピングするプロセスのみであり、他はスイッチ
ング素子と同一のプロセスで構成できる。Next, an interlayer insulating film 15 is formed, a contact window is opened, and
A pixel transparent electrode 17 is formed. Signal electrode 1 made of the same material
(drain electrode), source electrode 16, and auxiliary conductor 7 for auxiliary capacitance are formed. In this process, a second capacitor is formed and connected in parallel with the underlying capacitor. What is particularly required in this process is the transparent electrode 1 for storage capacitance.
The only process required is zero doping, and the rest can be constructed using the same process as the switching element.
第3図は本発明の応用例を示す。スイッチング素子3は
正スタガー型構造である。まずガラス基板8にドープし
た多結晶シリコン又はITOを形成し、信号電極1 (
ドレイン)、ドレイン電極16、画素用透明電極10を
形成する。この」二に、能動層である薄膜半導体層18
.ゲート絶縁膜11、ゲート12を形成する。以下は第
2図に示したと同様に補助容量5を形成できる。FIG. 3 shows an example of application of the present invention. The switching element 3 has a positive staggered structure. First, doped polycrystalline silicon or ITO is formed on the glass substrate 8, and the signal electrode 1 (
a drain), a drain electrode 16, and a transparent electrode 10 for pixels are formed. Second, the thin film semiconductor layer 18 which is an active layer.
.. A gate insulating film 11 and a gate 12 are formed. Thereafter, the auxiliary capacitor 5 can be formed in the same manner as shown in FIG.
以上の実施例では多結晶シリコンを用いるスイッチング
素子について述べたが、単結晶、非晶質膜を用いるスイ
ッチング素子についても応用できる。また透明電極材料
としては、スイッチング素子を構成する半導体層、IT
O,薄膜メタル、導電性酸化物等を任意に選択できる。In the above embodiments, switching elements using polycrystalline silicon have been described, but the present invention can also be applied to switching elements using single crystal or amorphous films. In addition, transparent electrode materials include semiconductor layers constituting switching elements, IT
O, thin film metal, conductive oxide, etc. can be arbitrarily selected.
〔発明の効果〕
以上述べた本発明によれば、大きな補助容量を工程を増
すことなく形成でき、液晶表示装置の画質の信頼性を高
めることができる。[Effects of the Invention] According to the present invention described above, a large auxiliary capacitor can be formed without increasing the number of steps, and the reliability of the image quality of a liquid crystal display device can be improved.
第1図は本発明を説明するためのアクティブマトリクス
部分構成図、第2図及び第3図は本発明を説明するため
のスイッチング素子及び補助容量部の断面図、第4図及
び第5図はそれぞれ従来例を説明するためのアクティブ
マトリクス部分構成図及びスイッチング素子及び補助容
量部を示す図である。
3・・・スイッチング素子、5・・・補助容量、10・
・・補助容量用透明電極、13・・・補助容量用絶縁膜
、14・・・補助容量用共通電極、15・・・層間絶縁
膜、17・・・画素用透明電極。
弔
図FIG. 1 is a partial configuration diagram of an active matrix for explaining the present invention, FIGS. 2 and 3 are cross-sectional views of a switching element and an auxiliary capacitor section for explaining the present invention, and FIGS. 4 and 5 are FIG. 2 is a partial configuration diagram of an active matrix and a diagram showing a switching element and an auxiliary capacitance section, respectively, for explaining a conventional example. 3... Switching element, 5... Auxiliary capacitor, 10.
... Transparent electrode for auxiliary capacitance, 13... Insulating film for auxiliary capacitance, 14... Common electrode for auxiliary capacitance, 15... Interlayer insulating film, 17... Transparent electrode for pixel. Funeral map
Claims (1)
が、積層された複数の容量を並列に接続されてなること
を特徴とする補助容量を有する液晶表示装置。 2、第1項において、液晶表示装置を駆動するスイッチ
ング素子のゲート絶縁膜から成る容量と、スイッチング
素子の保護膜から成る容量を並列に接続したことを特徴
とする補助容量を有する液晶表示装置。 3、第1項または第2項において、スイッチング素子の
ゲート電極が、補助容量の共通電極であることを特徴と
する補助容量を有する液晶表示装置。 4、第1項、第2項または第3項において、スイッチン
グ素子の能導層又はゲートと同一材料を、補助容量の透
明電極として用いたことを特徴とする補助容量を有する
液晶表示装置。[Scope of Claims] 1. A liquid crystal display device having an auxiliary capacitor, characterized in that the auxiliary capacitor is made up of a plurality of stacked capacitors connected in parallel. 2. A liquid crystal display device having an auxiliary capacitor according to item 1, characterized in that a capacitor made of a gate insulating film of a switching element that drives the liquid crystal display device and a capacitor made of a protective film of the switching element are connected in parallel. 3. A liquid crystal display device having an auxiliary capacitor according to item 1 or 2, wherein the gate electrode of the switching element is a common electrode of the auxiliary capacitor. 4. A liquid crystal display device having an auxiliary capacitor according to item 1, 2 or 3, characterized in that the same material as the active layer or gate of the switching element is used as the transparent electrode of the auxiliary capacitor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63194421A JPH0244317A (en) | 1988-08-05 | 1988-08-05 | Liquid crystal display device with auxiliary capacity |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63194421A JPH0244317A (en) | 1988-08-05 | 1988-08-05 | Liquid crystal display device with auxiliary capacity |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0244317A true JPH0244317A (en) | 1990-02-14 |
Family
ID=16324326
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63194421A Pending JPH0244317A (en) | 1988-08-05 | 1988-08-05 | Liquid crystal display device with auxiliary capacity |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0244317A (en) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03288824A (en) * | 1990-04-05 | 1991-12-19 | Sharp Corp | Active matrix display device |
US5208690A (en) * | 1990-03-24 | 1993-05-04 | Sony Corporation | Liquid crystal display having a plurality of pixels with switching transistors |
KR950019865A (en) * | 1993-03-07 | 1995-07-24 | 카나이 쯔또무 | LCD and its manufacturing method |
WO1999028784A1 (en) * | 1997-11-28 | 1999-06-10 | Matsushita Electric Industrial Co., Ltd. | Reflection-type display device and image device using reflection-type display device |
JP2000284722A (en) * | 1999-01-29 | 2000-10-13 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacture |
US6259117B1 (en) | 1994-06-02 | 2001-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display having storage capacitor associated with each pixel transistor |
US6404474B1 (en) | 1998-07-24 | 2002-06-11 | Nec Corporation | Horizontal electric field LCD with increased capacitance between pixel and common electrodes |
JP2002182244A (en) * | 2000-12-15 | 2002-06-26 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacturing method |
US6566684B1 (en) | 1994-06-13 | 2003-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix circuit having a TFT with pixel electrode as auxiliary capacitor |
US6825496B2 (en) | 2001-01-17 | 2004-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP2009003187A (en) * | 2007-06-21 | 2009-01-08 | Hitachi Displays Ltd | Liquid crystal display device |
JP2009058913A (en) * | 2007-09-04 | 2009-03-19 | Hitachi Displays Ltd | Liquid crystal display device |
CN102213880A (en) * | 2010-04-05 | 2011-10-12 | 精工爱普生株式会社 | Electro-optical device and electronic apparatus |
JP2013178523A (en) * | 2013-03-25 | 2013-09-09 | Japan Display Inc | Liquid crystal display device |
JP2017116959A (en) * | 1999-04-27 | 2017-06-29 | 株式会社半導体エネルギー研究所 | EL display device |
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-
1988
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JPS57132191A (en) * | 1981-02-10 | 1982-08-16 | Suwa Seikosha Kk | Active matrix substrate |
JPS57205778A (en) * | 1981-06-12 | 1982-12-16 | Suwa Seikosha Kk | Color liquid crystal display body |
JPS5933877A (en) * | 1982-08-19 | 1984-02-23 | Seiko Epson Corp | Active matrix substrate |
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Cited By (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5208690A (en) * | 1990-03-24 | 1993-05-04 | Sony Corporation | Liquid crystal display having a plurality of pixels with switching transistors |
JPH03288824A (en) * | 1990-04-05 | 1991-12-19 | Sharp Corp | Active matrix display device |
KR950019865A (en) * | 1993-03-07 | 1995-07-24 | 카나이 쯔또무 | LCD and its manufacturing method |
US6495858B1 (en) | 1994-06-02 | 2002-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display device having thin film transistors |
US6259117B1 (en) | 1994-06-02 | 2001-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display having storage capacitor associated with each pixel transistor |
US6297518B1 (en) | 1994-06-02 | 2001-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display and electrooptical device |
US7459724B2 (en) | 1994-06-02 | 2008-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display and electrooptical device |
US6885027B2 (en) | 1994-06-02 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display and electrooptical device |
US7148506B2 (en) | 1994-06-02 | 2006-12-12 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix display and electrooptical device |
US7479657B2 (en) | 1994-06-13 | 2009-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including active matrix circuit |
US7161178B2 (en) | 1994-06-13 | 2007-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Display device having a pixel electrode through a second interlayer contact hole in a wider first contact hole formed over an active region of display switch |
US6566684B1 (en) | 1994-06-13 | 2003-05-20 | Semiconductor Energy Laboratory Co., Ltd. | Active matrix circuit having a TFT with pixel electrode as auxiliary capacitor |
WO1999028784A1 (en) * | 1997-11-28 | 1999-06-10 | Matsushita Electric Industrial Co., Ltd. | Reflection-type display device and image device using reflection-type display device |
US6404474B1 (en) | 1998-07-24 | 2002-06-11 | Nec Corporation | Horizontal electric field LCD with increased capacitance between pixel and common electrodes |
JP2000284722A (en) * | 1999-01-29 | 2000-10-13 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacture |
JP2017116959A (en) * | 1999-04-27 | 2017-06-29 | 株式会社半導体エネルギー研究所 | EL display device |
JP2002182244A (en) * | 2000-12-15 | 2002-06-26 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacturing method |
US7808002B2 (en) | 2001-01-17 | 2010-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US8952385B1 (en) | 2001-01-17 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US10263059B2 (en) | 2001-01-17 | 2019-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US7242024B2 (en) | 2001-01-17 | 2007-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US9911801B2 (en) | 2001-01-17 | 2018-03-06 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US6825496B2 (en) | 2001-01-17 | 2004-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US9679955B2 (en) | 2001-01-17 | 2017-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US9324775B2 (en) | 2001-01-17 | 2016-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US9171896B2 (en) | 2001-01-17 | 2015-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP2009003187A (en) * | 2007-06-21 | 2009-01-08 | Hitachi Displays Ltd | Liquid crystal display device |
US8253873B2 (en) | 2007-09-04 | 2012-08-28 | Hitachi Displays, Ltd. | Liquid crystal display device having first, second, and third transparent electrodes that form first and second storage capacitors |
US10718983B2 (en) | 2007-09-04 | 2020-07-21 | Japan Display Inc. | Display device comprising a transparent counter electrode having an opening that overlaps with the opening of a first insulating film and a second insulating film |
US8879036B2 (en) | 2007-09-04 | 2014-11-04 | Japan Display Inc. | Liquid crystal display device comprising first and second electrodes wherein the second electrode is connected with a source electrode without passing through a first insulating film |
US9261747B2 (en) | 2007-09-04 | 2016-02-16 | Japan Display Inc. | Liquid crystal display device comprising a transparent pixel electrode connected with a thin film transistor through a contact hole and a transparent counter electrode having multiple slits |
US11789327B2 (en) | 2007-09-04 | 2023-10-17 | Japan Display Inc. | Display device comprising a metal wiring between an organic insulating film and a first inorganic insulating film and having a portion overlapping a drain electrode of a thin film transistor |
US8368830B2 (en) | 2007-09-04 | 2013-02-05 | Hitachi Displays, Ltd. | Liquid crystal display device having first, second, and third transparent electrodes wherein a second region of the second electrode protrudes from a first region |
US11385512B2 (en) | 2007-09-04 | 2022-07-12 | Japan Display Inc. | Display device comprising a metal wiring connected to a transparent counter electrode and overlapping a drain electrode of a thin film transistor |
US11016351B2 (en) | 2007-09-04 | 2021-05-25 | Japan Display Inc. | Liquid crystal display device comprising a transparent pixel electrode and counter electrode and an insular transparent electrode disposed between an organic insulating film and a common wiring |
JP2009058913A (en) * | 2007-09-04 | 2009-03-19 | Hitachi Displays Ltd | Liquid crystal display device |
US10409122B2 (en) | 2007-09-04 | 2019-09-10 | Japan Display Inc. | Liquid crystal display device comprising a metal wiring in contact with a counter electrode and a transparent electrode at a contact hole |
CN102213880A (en) * | 2010-04-05 | 2011-10-12 | 精工爱普生株式会社 | Electro-optical device and electronic apparatus |
CN102213880B (en) * | 2010-04-05 | 2015-09-02 | 精工爱普生株式会社 | Electro-optical device and electronic equipment |
JP2011221071A (en) * | 2010-04-05 | 2011-11-04 | Seiko Epson Corp | Electro-optic device and electronic equipment |
JP2013178523A (en) * | 2013-03-25 | 2013-09-09 | Japan Display Inc | Liquid crystal display device |
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