JPH0244092A - Recovery device of inert gas for single crystal producting furnace - Google Patents
Recovery device of inert gas for single crystal producting furnaceInfo
- Publication number
- JPH0244092A JPH0244092A JP19326988A JP19326988A JPH0244092A JP H0244092 A JPH0244092 A JP H0244092A JP 19326988 A JP19326988 A JP 19326988A JP 19326988 A JP19326988 A JP 19326988A JP H0244092 A JPH0244092 A JP H0244092A
- Authority
- JP
- Japan
- Prior art keywords
- inert gas
- single crystal
- furnace
- mechanical booster
- recovery device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011261 inert gas Substances 0.000 title claims abstract description 49
- 239000013078 crystal Substances 0.000 title claims abstract description 23
- 238000011084 recovery Methods 0.000 title claims abstract description 17
- 239000007788 liquid Substances 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims description 24
- 238000000746 purification Methods 0.000 claims description 6
- 239000003921 oil Substances 0.000 abstract description 23
- 239000007789 gas Substances 0.000 abstract description 16
- 239000000843 powder Substances 0.000 abstract description 10
- 238000007789 sealing Methods 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 238000005299 abrasion Methods 0.000 abstract description 3
- 239000003595 mist Substances 0.000 abstract description 3
- 230000015556 catabolic process Effects 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 26
- 229910052786 argon Inorganic materials 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はシリコンなどの単結晶製造炉に用いられる不活
性ガスの回収装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an inert gas recovery device used in a furnace for producing single crystals such as silicon.
シリコンなどの単結晶製造炉では、炉内雰囲気ガスとし
てアルゴンなどの不活性ガスが使用されている。過去に
おいては、雰囲気ガスとして使用された後の不活性ガス
は大気中に放出されていたが、このような不活性ガスは
高価であるため、回収して循環使用するようになってき
ている。In furnaces for producing single crystals such as silicon, an inert gas such as argon is used as the furnace atmosphere gas. In the past, inert gas was released into the atmosphere after being used as an atmospheric gas, but since such inert gas is expensive, it has come to be recovered and recycled for use.
従来、このための不活性ガス回収装置としては、例えば
製造炉、油回転式の真空ポンプ（ロータリーポンプ）、
フィルター、精製装置により不活性ガスの循環系を形成
したものが考えられていた。Conventionally, inert gas recovery devices for this purpose include, for example, manufacturing furnaces, oil rotary vacuum pumps (rotary pumps),
An inert gas circulation system formed by a filter and purification device was considered.
しかし、この不活性ガス回収装置では、ロータリーポン
プから発生するオイルミストが分解して生成するｃｏＳ
ｃｏ２などのガスが単結晶に及ぼす悪影響、及び製造炉
内で溶融シリコンと石英ガラスるつぼとの反応により生
成したＳｉＯ微粉がロータリーポンプに及ぼす悪影響が
問題となる。However, in this inert gas recovery device, the oil mist generated from the rotary pump decomposes and generates COS.
Problems include the negative effects that gases such as CO2 have on the single crystal, and the negative effects that SiO fine powder produced by the reaction between molten silicon and the quartz glass crucible in the manufacturing furnace has on the rotary pump.
そこで、特開昭６１−９７１８７号には、上述した問題
が生じない不活性ガス回収装置が提案されている。Therefore, Japanese Patent Laid-Open No. 61-97187 proposes an inert gas recovery device that does not cause the above-mentioned problems.
この不活性ガス回収装置は、第３肉に示すように、製造
炉１、水封式真空ポンプ２、精製装置３を順次接続して
不活性ガスの循環系を形成したものである。このように
水封式真空ポンプ２を用いれば、オイルミストが発生す
ることがなく、また封水によって不活性ガス中のＳｉＯ
を除去することができるので、単結晶の品質への悪影響
及びポンプへの悪影響と同時に解消することができる。As shown in the third section, this inert gas recovery apparatus is one in which a production furnace 1, a water ring vacuum pump 2, and a purification device 3 are connected in sequence to form an inert gas circulation system. If the water ring type vacuum pump 2 is used in this way, oil mist will not be generated, and the water seal will reduce the amount of SiO in the inert gas.
can be removed, so that the adverse effects on the quality of the single crystal and the pump can be eliminated at the same time.
ところで、第３図に示す装置で、水封式真空ポンプ２に
よる真空度をロータリーポンプと同等まで上げようとす
る場合、製造炉１と水封式真空ポンプ２との間にメカニ
カルブースタを設けることが考えられる。By the way, in the apparatus shown in FIG. 3, when trying to raise the degree of vacuum by the water ring vacuum pump 2 to the same level as the rotary pump, a mechanical booster must be installed between the manufacturing furnace 1 and the water ring vacuum pump 2. is possible.
しかしながら、上記のようにメカニカルブースタを設け
た場合、使用後の不活性ガス中に含まれるＳｉＯ微粉が
メカニカルブースタ内に堆積し、シール部が磨耗されて
高真空度が保てなくなったり、シール部が破損するとい
う問題があった。However, when a mechanical booster is installed as described above, fine SiO powder contained in the inert gas after use accumulates inside the mechanical booster, causing the sealing part to wear out and making it impossible to maintain a high degree of vacuum. There was a problem with it being damaged.
このように高真空度が得られないと、製造炉内の不活性
ガスを正常に排気することができなくなり、製造される
単結晶の品質に悪影響を及ぼすことになる。このため、
メカニカルブースタの修理交換を頻繁に行わなければな
らないという問題があった。If such a high degree of vacuum cannot be obtained, the inert gas in the production furnace cannot be normally exhausted, which will have a negative effect on the quality of the single crystal produced. For this reason,
There was a problem in that the mechanical booster had to be repaired and replaced frequently.
なお、不活性ガス中のＳｉＯ微粉を捕集する手段として
フィルターを使用することが考えられる。Note that it is possible to use a filter as a means for collecting SiO fine powder in the inert gas.
しかし、この場合にはフィルターの目詰まりによって真
空度が低下するため、フィルターを頻繁に交換しなけれ
ばならず、根本的な解決策とはならない。However, in this case, the degree of vacuum decreases due to filter clogging, requiring frequent replacement of the filter, which is not a fundamental solution.
本発明は上記問題点を解消するためになされたものであ
り、製造炉内のｉｌｌ結晶の品質を悪化させることのな
い液封式真空ポンプを用い、ロータリーポンプと同等の
真空度が得られ、かつ修理交換の頻度が少ない不活性ガ
ス回収装置を提供することを目的とする。The present invention has been made to solve the above problems, and uses a liquid ring vacuum pump that does not deteriorate the quality of ill crystals in the production furnace, and achieves the same degree of vacuum as a rotary pump. Another object of the present invention is to provide an inert gas recovery device that requires less frequent repair and replacement.
本発明の単結晶製造炉用不活性ガス回収装置は、単結晶
製造炉に液封式真空ポンプ及び精製装置を接続し、製造
炉内に流される不活性ガスの循環系を形成した単結晶製
造炉用不活性ガス回収装置において、上記製造炉と液封
式真空ポンプとの間にメカニカルブースタを設け、該メ
カニカルブースタの使用済不活性ガスの流路と油室との
中間室及び油室のうち少なくともいずれか一方に、高純
度不活性ガスの導入手段を接続したことを特徴とするも
のである。The inert gas recovery device for a single crystal manufacturing furnace of the present invention connects a liquid ring vacuum pump and a purification device to a single crystal manufacturing furnace to form a circulation system for inert gas flowing into the manufacturing furnace. In the furnace inert gas recovery device, a mechanical booster is provided between the production furnace and the liquid ring vacuum pump, and an intermediate chamber between the spent inert gas flow path of the mechanical booster and the oil chamber, and an intermediate chamber between the spent inert gas flow path of the mechanical booster and the oil chamber. The device is characterized in that at least one of them is connected to a means for introducing high-purity inert gas.
このような不活性ガス回収装置によれば、メカニカルブ
ースタの使用済不活性ガスの流路と油室との中間室及び
油室のうち少なくともいずれか一方に高純度不活性ガス
を導入することによって、中間室及び／又は油室の圧力
を常に使用済不活性ガスの流路の圧力以上にすることが
できる。このため、中間室及び／又は油室の圧力が負正
になることはなく、装置の停止時にも使用済不活性ガス
の流路から中間室及び／又は油室へ逆流することを防止
できる。したがって、使用済不活性ガス中のＳｉＯ微粉
によるシール部の磨耗、破損を防止でき、メカニカルブ
ースタの修理交換の頻度は少なくなる。そして、製造炉
内の単結晶の品質を悪化させることなく、ロータリーポ
ンプと同等の真空度が得られる。According to such an inert gas recovery device, high-purity inert gas is introduced into at least one of the intermediate chamber between the used inert gas flow path and the oil chamber of the mechanical booster, and the oil chamber. , the pressure in the intermediate chamber and/or the oil chamber can always be higher than the pressure in the used inert gas flow path. Therefore, the pressure in the intermediate chamber and/or the oil chamber does not become negative or positive, and even when the apparatus is stopped, it is possible to prevent the used inert gas from flowing back from the flow path to the intermediate chamber and/or the oil chamber. Therefore, it is possible to prevent the seal portion from being worn out and damaged due to SiO fine powder in the used inert gas, and the frequency of repair and replacement of the mechanical booster is reduced. In addition, a degree of vacuum equivalent to that of a rotary pump can be obtained without deteriorating the quality of the single crystal in the production furnace.
以下、本発明の実施例を第１図及び第２図を参照して説
明する。Embodiments of the present invention will be described below with reference to FIGS. 1 and 2.
第１図は本発明の不活性ガス回収装置の系統図である。FIG. 1 is a system diagram of the inert gas recovery apparatus of the present invention.
第１図において、単結晶製造炉１には、メカニカルブー
スタ４、水封式真空ポンプ２、精製装置３が順次接続さ
れ、単結晶製造炉１内に流される不活性ガス（アルゴン
ガス）の循環系が形成されている。In FIG. 1, a mechanical booster 4, a water ring vacuum pump 2, and a purification device 3 are sequentially connected to a single crystal manufacturing furnace 1, and an inert gas (argon gas) is circulated through the single crystal manufacturing furnace 1. A system is formed.
上記メカニカルブースタ４は第２図に示すような構造を
有している。第２図において、ケーシング１１には使用
済アルゴンガスの吸入口１２及び排出口１３が設けられ
ており、ケーシング１１内にロータ１４が配置されてい
る。ロータシャフト１５の一端側は、サイドカバー１６
、ベアリングカバー１７、モータブラケット１８の中央
部を通り、カップリング１９を介してモータ２０と接続
されている。一方、ロータシャフト１５の他端側はサイ
ドカバー１６の中央部を通り、ギアカバー２１内でその
先端にギア２２が取り付けられている。このロータシャ
フト１５は輔受２３で支持されるとともに、所定位置で
オイルシール２４やメカニカルシール２５によってシー
ルされている。上記サイドカバ−１６内部の空間が中間
室２６、ベアリングカバー１７及びギアカバ−２１内部
の空間が油室２７となっている。そして、中間室２６及
び（又は）油室２７には高純度アルゴンガスの導入管２
８が接続されており、常時１ ｋｇ ／ ｃ−の圧力の
アルゴンガスが導入されている。The mechanical booster 4 has a structure as shown in FIG. In FIG. 2, a casing 11 is provided with an inlet 12 and an outlet 13 for used argon gas, and a rotor 14 is disposed within the casing 11. One end side of the rotor shaft 15 has a side cover 16
, the bearing cover 17 and the motor bracket 18 , and are connected to the motor 20 via a coupling 19 . On the other hand, the other end of the rotor shaft 15 passes through the center of the side cover 16, and a gear 22 is attached to the tip within the gear cover 21. The rotor shaft 15 is supported by a support 23 and sealed at predetermined positions by an oil seal 24 and a mechanical seal 25. The space inside the side cover 16 is an intermediate chamber 26, and the space inside the bearing cover 17 and gear cover 21 is an oil chamber 27. A high purity argon gas introduction pipe 2 is provided in the intermediate chamber 26 and/or oil chamber 27.
8 is connected, and argon gas at a pressure of 1 kg/c- is constantly introduced.
上述したようにメカニカルブースタ４には、中間室２６
及び（又は）油室２７に常時アルゴンガスが導入されて
いるので、中間室２６及び（又は）油室２７の圧力が使
用済アルゴンガスの流路（ロータ室）の圧力よりも低く
なることはない。したがって、装置の停止時でも使用済
アルゴンガスが中間室２６及び（又は）油室２７に逆流
することはなく、使用済アルゴンガス中のＳｉＯ微粉に
よるシール部の磨耗、破損を防止することができる。As mentioned above, the mechanical booster 4 includes the intermediate chamber 26.
And/or because argon gas is constantly introduced into the oil chamber 27, the pressure in the intermediate chamber 26 and/or the oil chamber 27 will never be lower than the pressure in the used argon gas flow path (rotor chamber). do not have. Therefore, even when the apparatus is stopped, the used argon gas does not flow back into the intermediate chamber 26 and/or the oil chamber 27, and it is possible to prevent the seal from being worn out or damaged by the SiO fine powder in the used argon gas. .
このメカニカルブースタ４の排出口１３から排出された
使用済アルゴンガスは、水封式真空ポンプ２へ吸引され
、水と接触することによりＳｉＯ微粉が除去される。The used argon gas discharged from the discharge port 13 of the mechanical booster 4 is sucked into the water ring vacuum pump 2, and SiO fine powder is removed by contacting with water.
更に、精製装置３ではアルゴンガス中に含まれる０２、
Ｎ２などを触媒などによって所定値以下まで除去し、単
結晶製造炉１へ高純度のアルゴンガスを循環させる。Furthermore, in the purification device 3, 02, which is contained in the argon gas,
N2 and the like are removed to below a predetermined value using a catalyst or the like, and high purity argon gas is circulated to the single crystal production furnace 1.
本発明の不活性ガス回収装置によれば、装置の停止時に
も使用済不活性ガスがメカニカルブースタ内の中間室及
び／又は油室へ逆流することを防止でき、使用済不活性
ガス中のＳｉＯ微粉によるシール部の磨耗、破損を防止
できるので、メカニカルブースタの修理交換の頻度は少
なくなる。そして、製造炉内の単結晶の品質を悪化させ
ることなく、ロータリーポンプと同等の真空度が得られ
る。According to the inert gas recovery device of the present invention, it is possible to prevent the used inert gas from flowing back into the intermediate chamber and/or oil chamber in the mechanical booster even when the device is stopped, and the SiO Since abrasion and damage to the seal part due to fine powder can be prevented, the frequency of repair and replacement of the mechanical booster is reduced. In addition, a degree of vacuum equivalent to that of a rotary pump can be obtained without deteriorating the quality of the single crystal in the production furnace.
第１図は本発明の実施例における単結晶製造炉用不活性
ガス回収装置の系統図、第２図は同装置に用いられるメ
カニカルブースタの断面図、第３図は従来の単結晶製造
炉用不活性ガス回収装置の系統図である。
１・・・単結晶製造炉、２・・・水封式真空ポンプ、３
・・精製装置、４・・・・・・メカニカルブースタ、１
１・・・ケーシング、１２・・・吸入口、１３・・・排
出口、１４・・・ロータ、１５・・・ロータシャフト、
１６・・・サイドカバー １７・・・ベアリングカバー
１８・・・モータブラケット、１９・・・カップリン
グ、２０・・・モータ、２１・・・ギアカバー ２２・
・・ギア、２３・・・ベアリング、２４・・・オイルシ
ール、２５・・・メカニカルシール、２６・・・中間室
、２７・・・油室、２８・・・高純度アルゴンガス導入
管。
出願人代理人 弁理士 鈴江武彦
第３図Fig. 1 is a system diagram of an inert gas recovery device for a single crystal production furnace in an embodiment of the present invention, Fig. 2 is a sectional view of a mechanical booster used in the same device, and Fig. 3 is a conventional monocrystal production furnace use It is a system diagram of an inert gas recovery device. 1...Single crystal production furnace, 2...Water ring vacuum pump, 3
...Refiner, 4...Mechanical booster, 1
DESCRIPTION OF SYMBOLS 1... Casing, 12... Inlet, 13... Discharge port, 14... Rotor, 15... Rotor shaft,
16... Side cover 17... Bearing cover 18... Motor bracket, 19... Coupling, 20... Motor, 21... Gear cover 22.
... Gear, 23 ... Bearing, 24 ... Oil seal, 25 ... Mechanical seal, 26 ... Intermediate chamber, 27 ... Oil chamber, 28 ... High purity argon gas introduction pipe. Applicant's agent Patent attorney Takehiko Suzue Figure 3
Claims (1)
、製造炉内に流される不活性ガスの循環系を形成した単
結晶製造炉用不活性ガス回収装置において、上記製造炉
と液封式真空ポンプとの間にメカニカルブースタを設け
、該メカニカルブースタの使用済不活性ガスの流路と油
室との中間室及び油室のうち少なくともいずれか一方に
、高純度不活性ガスの導入手段を接続したことを特徴と
する単結晶製造炉用不活性ガス回収装置。In an inert gas recovery device for a single crystal manufacturing furnace, which connects a liquid ring vacuum pump and a purification device to a single crystal manufacturing furnace to form a circulation system for inert gas flowing into the manufacturing furnace, the above manufacturing furnace and a liquid ring A mechanical booster is provided between the mechanical booster and the used inert gas flow path, and means for introducing high-purity inert gas into at least one of the intermediate chamber and the oil chamber between the used inert gas flow path and the oil chamber of the mechanical booster. An inert gas recovery device for a single crystal manufacturing furnace, characterized in that it is connected to a single crystal manufacturing furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19326988A JPH0244092A (en) | 1988-08-02 | 1988-08-02 | Recovery device of inert gas for single crystal producting furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19326988A JPH0244092A (en) | 1988-08-02 | 1988-08-02 | Recovery device of inert gas for single crystal producting furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0244092A true JPH0244092A (en) | 1990-02-14 |
Family
ID=16305129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19326988A Pending JPH0244092A (en) | 1988-08-02 | 1988-08-02 | Recovery device of inert gas for single crystal producting furnace |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0244092A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000327480A (en) * | 1999-05-24 | 2000-11-28 | Toshiba Ceramics Co Ltd | Equipment for pulling up single crystal and operation method of the same equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5135528U (en) * | 1974-09-09 | 1976-03-17 | ||
| JPS6197187A (en) * | 1984-10-17 | 1986-05-15 | Toshiba Ceramics Co Ltd | Device for recovering inert gas for pulling device of single crystal |
-
1988
- 1988-08-02 JP JP19326988A patent/JPH0244092A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5135528U (en) * | 1974-09-09 | 1976-03-17 | ||
| JPS6197187A (en) * | 1984-10-17 | 1986-05-15 | Toshiba Ceramics Co Ltd | Device for recovering inert gas for pulling device of single crystal |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000327480A (en) * | 1999-05-24 | 2000-11-28 | Toshiba Ceramics Co Ltd | Equipment for pulling up single crystal and operation method of the same equipment |
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