JPH0243786A - Laser device - Google Patents
Laser deviceInfo
- Publication number
- JPH0243786A JPH0243786A JP19497088A JP19497088A JPH0243786A JP H0243786 A JPH0243786 A JP H0243786A JP 19497088 A JP19497088 A JP 19497088A JP 19497088 A JP19497088 A JP 19497088A JP H0243786 A JPH0243786 A JP H0243786A
- Authority
- JP
- Japan
- Prior art keywords
- laser
- optical resonator
- air space
- etalon
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 21
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 abstract description 22
- 229910052736 halogen Inorganic materials 0.000 abstract description 3
- 150000002367 halogens Chemical class 0.000 abstract description 3
- 238000013461 design Methods 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 230000010355 oscillation Effects 0.000 description 10
- 238000000576 coating method Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 230000004075 alteration Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/1062—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a controlled passive interferometer, e.g. a Fabry-Perot etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/136—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling devices placed within the cavity
- H01S3/137—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling devices placed within the cavity for stabilising of frequency
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Optical Filters (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は微細加工等に用いるレーザ装置に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a laser device used for microfabrication and the like.
従来の技術
近年、微細加工用の光源として紫外域で発振するレーザ
装置が注目されている。中でもエキシマレーザは、レー
ザ媒質であるクリプトン、キセノンなどの希ガスとふっ
素、塩素などのハロゲンガスの組み合わせによって、３
５３ｎｍから１９３ｎｍの間のいくつかの波長で強力な
発振線を得ることができる。BACKGROUND OF THE INVENTION In recent years, laser devices that oscillate in the ultraviolet region have attracted attention as light sources for microfabrication. Among these, excimer lasers use a combination of a rare gas such as krypton or xenon as a laser medium and a halogen gas such as fluorine or chlorine.
Strong oscillation lines can be obtained at several wavelengths between 53 nm and 193 nm.
これらエキシマレーザの利得バンド幅は約１ ｎｍと広
く、光共振器と組み合わせて発振させた場合、発振線が
０．５ｎｍ程度の線幅（半値全幅）を持つ。The gain bandwidth of these excimer lasers is as wide as about 1 nm, and when oscillated in combination with an optical resonator, the oscillation line has a line width (full width at half maximum) of about 0.5 nm.
このように比較的広い線幅を持つレーザ装置を光源とし
て用いた場合、光の伝送系に色収差を補正した光学系を
採用する必要がある。ところが、波長が３５０ｎｍ以下
の紫外域では、光学系に用いるレンズの光学材料の選択
の幅が限られ、色収差補正が困難となる。したがって、
波長３５Ｑｎｍ以下のエキシマレーザを利用する場合、
発振線の線幅を０．００５ ｎｍ程度にまで単色化する
ことが行なわれている。これによって、色収差補正しな
い光学系を採用できることから、装置の簡略化、さらに
は小型化、価格の低減を実現できる。また、集光したレ
ーザビームのパターンを極限まで小さくすることができ
、超微細加工用光源としての用途が開けてくる。When a laser device having such a relatively wide line width is used as a light source, it is necessary to employ an optical system that corrects chromatic aberration for the light transmission system. However, in the ultraviolet region where the wavelength is 350 nm or less, the range of selection of optical materials for lenses used in the optical system is limited, making it difficult to correct chromatic aberration. therefore,
When using an excimer laser with a wavelength of 35 Qnm or less,
The line width of the oscillation line is made monochromatic to about 0.005 nm. As a result, it is possible to employ an optical system that does not correct chromatic aberration, which makes it possible to simplify the apparatus, further downsize it, and reduce its cost. Additionally, the pattern of the focused laser beam can be made as small as possible, opening up applications as a light source for ultrafine processing.
レーザの発振線幅を狭める、すなわち単色化するＫｕグ
レーティング、エタロンなどの波長選択素子を共振器中
に置けばよい。第３図はエアスペ−スエタロン４を用い
て発振線幅を狭めたレーザ装置の一例を示したものであ
る。エアスペースエタロンは２枚の平行・平面板を対向
させ、その間の干渉効果によって特定の波長だけを透過
させるように構成したファプリ・ベローエタロンの一種
である。エアスペースエタロンは対向する反射面の精度
、反射率によって透過帯域幅が変わるので、目的とする
発振線幅が得られるように設計、製作すればよい。対向
する面の反射率を調整するためには、使用するレーザ波
長で特定の反射率をもつコーティングが施される。エキ
シマレーザの波長域では金属酸化物の多層輔コーティン
グが一般的である。A wavelength selection element such as a Ku grating or an etalon that narrows the oscillation line width of the laser, that is, makes it monochromatic, may be placed in the resonator. FIG. 3 shows an example of a laser device using an air space etalon 4 to narrow the oscillation line width. The air space etalon is a type of Fabry-Berrot etalon that consists of two parallel planar plates facing each other and configured to transmit only specific wavelengths due to the interference effect between them. Since the transmission band width of the air space etalon changes depending on the accuracy and reflectance of the opposing reflecting surfaces, it is only necessary to design and manufacture it so that the desired oscillation line width can be obtained. To adjust the reflectance of opposing surfaces, a coating is applied that has a specific reflectance at the laser wavelength used. Multilayer metal oxide coatings are common in the excimer laser wavelength range.
発明が解決しようとする課題
ところがレーザ共振器内では強力なレーザ光が波長選択
素子を通過するため、反射面のコーティングが損傷して
、レーザビームの形状の変化や出力の低下、さらには発
振線幅の広がり等を生じやすいという課題があった。Problems to be Solved by the Invention However, in a laser resonator, a powerful laser beam passes through a wavelength selection element, which damages the coating on the reflective surface, causing changes in the shape of the laser beam, a decrease in output, and even damage to the oscillation line. There was a problem that it was easy to cause the width to expand.
本発明はこのような課題を解決するためなされたもので
、単色化したレーザビームの品質を長期間保持できるレ
ーザ装置を提供するものである。The present invention was made to solve these problems, and provides a laser device that can maintain the quality of a monochromatic laser beam for a long period of time.
課題を解決するための手段
この課題を解決するため本発明のレーザ装置は、光共振
器と、前記光共振器中に設置され大気圧より減圧された
雰囲気中におかれた単一または複数の波長選択素子とを
具備したものである。Means for Solving the Problem In order to solve this problem, the laser device of the present invention includes an optical resonator, and a single or plural laser beam installed in the optical resonator and placed in an atmosphere reduced from atmospheric pressure. It is equipped with a wavelength selection element.
作 用
この構成により、波長選択素子のコーテイング面にレー
ザ光が照射された時に、空気中の酸素などの活性ガスを
介して起こる劣化反応を抑制することができ、波長選択
素子の寿命を飛躍的に伸ばすことができる。Effect: With this configuration, when the coating surface of the wavelength selection element is irradiated with laser light, it is possible to suppress the deterioration reaction that occurs through active gases such as oxygen in the air, dramatically extending the life of the wavelength selection element. can be extended to
実施例
第１図は本発明の一実施例であるエキシマレーザの構成
図である。第１図において本発明の実施例のレーザ装置
は希ガスとハロゲンガスの混合気体レーザ媒質とする放
電管１と、全反射繞２および出力鏡３からなる光共振器
によって、紫外域でレーザ発振する。光共振器の光軸上
には波長選択素子であるエアスペースエタロン４が置か
れている。エアスペースエタロン４は、レーザ波長ニオ
いて適当な反射率を持つ２枚の平行平面石英板を微小な
ギャップを保って向き合わせたファプリ・ペローエタロ
ンの一種であり、気密容器６中に設置されている。気密
容器５内部はポンプ６によって約Ｉ Ｐａ以下に減圧さ
れている。Embodiment FIG. 1 is a block diagram of an excimer laser which is an embodiment of the present invention. In FIG. 1, a laser device according to an embodiment of the present invention oscillates a laser in the ultraviolet region by an optical resonator consisting of a discharge tube 1 using a mixed gas laser medium of rare gas and halogen gas, a total reflection chamber 2, and an output mirror 3. do. An air space etalon 4, which is a wavelength selection element, is placed on the optical axis of the optical resonator. The air space etalon 4 is a type of Fapry-Perot etalon in which two parallel plane quartz plates having a reflectance appropriate for the laser wavelength are faced with a small gap, and is installed in an airtight container 6. There is. The pressure inside the airtight container 5 is reduced to about I Pa or less by a pump 6.
次に以上のような構成によるエキシマレーザの単色化の
原理を説明する。一般にエキシマレーザの利得バンド幅
は約１ ｎｍに及び、単色化せずに発振させると０．５
ｎｍ程度の発振線幅を持つ。共振器中にエアスペース
エタロン４を挿入すると、発振線幅はその透過特性に従
ってたとえば０．００１ｎｍオーダにまで単色化できる
。Next, the principle of making the excimer laser monochromatic with the above configuration will be explained. Generally, the gain bandwidth of an excimer laser is about 1 nm, and when oscillated without monochromatic, the gain bandwidth is 0.5 nm.
It has an oscillation linewidth of about nm. When the air space etalon 4 is inserted into the resonator, the oscillation line width can be made monochromatic to, for example, the order of 0.001 nm according to its transmission characteristics.
第２図１４エアスペースエタロンによって特定の波長が
選択される原理を示した図である。エアスペースエタロ
ンの対向する面は数１０％の反射率を持っており、入射
したレーザ光は多重反射した末に元来の進行方向へ出て
いく。この時、Ｎ回反射した後に出射する光と、Ｎ＋１
回反射後に出射する光との間には
Δ＝２ｎｄｃｏｓθ ・・・・・・・・・・・・・
・・（１）の光路差Δが生じるので、
ｍλ＝２ｎｄｃｏｓθ ・・・・・・・・・・・・・
・・（２）の関係を満たす波長λを持つ光だけがエアス
ペースエタロンを透過でき不ことになる。ここで、ｎは
対向する面間の屈折率、ｄは対向する面の間隔、０は光
軸に対する入射光の傾き角、ｍは整数である。FIG. 2 is a diagram showing the principle by which a specific wavelength is selected by the air space etalon. The opposing surfaces of the air space etalon have a reflectance of several tens of percent, and the incident laser beam undergoes multiple reflections before exiting in its original direction of travel. At this time, the light emitted after being reflected N times and N+1
Δ=2ndcosθ between the light emitted after the second reflection...
...Since the optical path difference Δ of (1) occurs, mλ=2ndcosθ ......
...Only light with a wavelength λ that satisfies the relationship (2) can pass through the air space etalon. Here, n is the refractive index between the opposing surfaces, d is the distance between the opposing surfaces, 0 is the inclination angle of the incident light with respect to the optical axis, and m is an integer.
以上の考察かられかるように、エアスペースエタロンの
対向する面の間ではレーザ光が何往復もする結果、高い
エネルギーの紫外光が定常的に存在することになる。こ
のため、反射膜のコーティングが次第に劣化することは
避けられない。特に、エアスペースエタロンを気密容器
に入れずに大気中で用いた場合、１ｏ ハルス程度エキ
シマレーザ装置を動作させた後に波長選択特性が変化し
て発振線幅が当初の値より広がったり、中心波長が変動
する現象が起こった。また、コーティングの表面が局所
的あるいは全体的に凹凸を生じる結果、ビーム形状の変
化や、レーザ出力の低下が見られた。As can be seen from the above considerations, as a result of the laser light making many round trips between the opposing surfaces of the air space etalon, high energy ultraviolet light is constantly present. For this reason, it is inevitable that the reflective film coating will gradually deteriorate. In particular, if the air space etalon is used in the atmosphere without being placed in an airtight container, the wavelength selection characteristics may change after operating the excimer laser device to the extent of 10 Hals, and the oscillation linewidth may become wider than its original value, or the center wavelength A phenomenon occurred in which the In addition, as a result of local or overall unevenness on the surface of the coating, changes in beam shape and reduction in laser output were observed.
コーティングが劣化する一因としては、紫外光を吸収し
た酸素が活性種となり、同じく紫外光を吸収して反応性
を帯びているコーテイング膜と結合することが挙げられ
る。One of the reasons why the coating deteriorates is that oxygen that absorbs ultraviolet light becomes an active species and combines with the coating film, which also absorbs ultraviolet light and becomes reactive.
そこで本実施例のレーザ装置においては、エアスペース
エタロン周囲の酸素を除去することによってこの問題を
解決した。すなわち、エアスペースエタロンを気密容器
に収め、気密容器内部を減圧することによって、酸素が
存在することによって起こる前記の反応を抑制している
。本発明者らの実験によれば、気密容器内部をＩ Ｐａ
程度にまで減圧することで、コーティングの寿命は２桁
以上延長された。なお、気密室内は必ずしも上記の値に
１で減圧する必要はなく、これ以上であっても大気圧以
下であれば、コーティングの寿命を伸ばす効果があった
。Therefore, in the laser device of this embodiment, this problem was solved by removing oxygen around the air space etalon. That is, the air space etalon is housed in an airtight container, and the pressure inside the airtight container is reduced to suppress the reaction that occurs due to the presence of oxygen. According to experiments conducted by the present inventors, the inside of the airtight container was heated to I Pa
By reducing the pressure to a certain extent, the life of the coating was extended by more than two orders of magnitude. Note that it is not necessarily necessary to reduce the pressure in the airtight chamber to the above value by 1, and even if the pressure is higher than this, as long as it is below atmospheric pressure, it is effective to extend the life of the coating.
なお、本実施例においては波長選択素子としてエアスペ
ースエタロンを用いた例を示シタが、−枚のガラス基板
の両面に反射膜をコーティングしたソリッドエタロンや
、基板表面に微細な溝加工を施したグレーティングなど
他の波長選択素子を用いた場合でも同様の効果が期待で
きる。In addition, in this example, an example in which an air space etalon is used as a wavelength selection element is shown. Similar effects can be expected even when other wavelength selection elements such as gratings are used.
発明の詳細
な説明したように本発明によるレーザ装置は、波長選択
素子を大気圧より減圧された気密容器中に置くことによ
って波長選択素子の寿命を伸ばし、長期間にわたって単
色化したレーザビームの品質を安定に保つという優れた
効果を有するレーザ装置を提供することができる。DETAILED DESCRIPTION OF THE INVENTION As described in detail, the laser device according to the present invention extends the life of the wavelength selection element by placing the wavelength selection element in an airtight container with a pressure lower than atmospheric pressure, and improves the quality of a monochromatic laser beam over a long period of time. It is possible to provide a laser device that has an excellent effect of keeping the temperature stable.
第１図は本発明の一実施例であるレーザ装置の構成図、
第２図はエアスペースエタロンの原理を説明する図、第
３図はレーザ光を単色化する方法の従来例を示す図であ
る。
１・・・・・・放電管、２・・・・・・全反射鏡、３・
・・・・・出力鏡、４・・・・・・エアスペースエタロ
ン、５・・・・・・Ｋ’Ｓ 容器、６・・・・・・ポン
プ。
代理人の氏名 弁理士 粟 野 重 孝 ほか１名派
派FIG. 1 is a configuration diagram of a laser device which is an embodiment of the present invention,
FIG. 2 is a diagram illustrating the principle of the air space etalon, and FIG. 3 is a diagram illustrating a conventional method of monochromating laser light. 1...discharge tube, 2...total reflection mirror, 3.
...Output mirror, 4...Air space etalon, 5...K'S container, 6...Pump. Name of agent: Patent attorney Shigetaka Awano and one other person
Claims (1)
された雰囲気中におかれた単一または複数の波長選択素
子とを具備したことを特徴とするレーザ装置。1. A laser device comprising: an optical resonator; and one or more wavelength selection elements installed in the optical resonator and placed in an atmosphere reduced in pressure from atmospheric pressure.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19497088A JPH0243786A (en) | 1988-08-04 | 1988-08-04 | Laser device |
| CA000578540A CA1302548C (en) | 1987-09-28 | 1988-09-27 | Laser apparatus |
| EP88115902A EP0310000B1 (en) | 1987-09-28 | 1988-09-27 | Laser apparatus |
| DE3889831T DE3889831T2 (en) | 1987-09-28 | 1988-09-27 | Laser apparatus. |
| US07/499,206 US4991178A (en) | 1987-09-28 | 1990-03-19 | Laser apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19497088A JPH0243786A (en) | 1988-08-04 | 1988-08-04 | Laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0243786A true JPH0243786A (en) | 1990-02-14 |
Family
ID=16333373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19497088A Pending JPH0243786A (en) | 1987-09-28 | 1988-08-04 | Laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0243786A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2848720A1 (en) | 2013-09-12 | 2015-03-18 | 3M Innovative Properties Company | Use of a lubricant in a mounting mat, method for making such a mat and mounting mat |
| US9494071B2 (en) | 2003-06-30 | 2016-11-15 | 3M Innovative Properties Company | Mounting mat for mounting monolith in a pollution control device |
-
1988
- 1988-08-04 JP JP19497088A patent/JPH0243786A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9494071B2 (en) | 2003-06-30 | 2016-11-15 | 3M Innovative Properties Company | Mounting mat for mounting monolith in a pollution control device |
| EP2848720A1 (en) | 2013-09-12 | 2015-03-18 | 3M Innovative Properties Company | Use of a lubricant in a mounting mat, method for making such a mat and mounting mat |
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