JPH0243785A - Wavelength variable laser device - Google Patents
Wavelength variable laser deviceInfo
- Publication number
- JPH0243785A JPH0243785A JP19496988A JP19496988A JPH0243785A JP H0243785 A JPH0243785 A JP H0243785A JP 19496988 A JP19496988 A JP 19496988A JP 19496988 A JP19496988 A JP 19496988A JP H0243785 A JPH0243785 A JP H0243785A
- Authority
- JP
- Japan
- Prior art keywords
- wavelength
- laser
- optical resonator
- wavelength selecting
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 16
- 230000011664 signaling Effects 0.000 claims 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052736 halogen Inorganic materials 0.000 abstract description 3
- 150000002367 halogens Chemical class 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 230000010355 oscillation Effects 0.000 description 9
- 238000001514 detection method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000013307 optical fiber Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/136—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling devices placed within the cavity
- H01S3/137—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling devices placed within the cavity for stabilising of frequency
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/1062—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using a controlled passive interferometer, e.g. a Fabry-Perot etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は光化学プロセス等に用いる波長可変レーザ装置
に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a wavelength tunable laser device used in photochemical processes and the like.
従来の技術
近年、光化学プロセヌ用の光源として、紫外域で発振す
るレーザ装置が注目されている。中でもエキシマレーザ
はレーザ媒質であるクリプトン。BACKGROUND OF THE INVENTION In recent years, laser devices that oscillate in the ultraviolet region have attracted attention as light sources for photochemical proscenes. Among them, excimer laser uses krypton as a laser medium.
キセノンなどの希ガスとふっ素、塩素などのハロゲンガ
スの組み合わせによって、３５３ｎｍから１９３ｎｍの
間のいくつかの波長で強力な発振線を得ることができる
。By combining a rare gas such as xenon with a halogen gas such as fluorine or chlorine, strong oscillation lines can be obtained at several wavelengths between 353 nm and 193 nm.
これらエキシマレーザの利得バンド幅は約１ｎｍと広い
ので、光共振器中にグレーティングやエタロンなどの波
長選択素子を挿入することによって、その利得バンド幅
内の希望する波長で発振させることができる。したがっ
て、発振波長を精密に検出して制御する機構をレーザ装
置に内蔵すれば、波長可変の紫外レーザ装置として、光
励起による材料の加工、処理あるいけ化学反応の制御な
ど幅広い用途が開ける。また、原版のパターンを縮小投
影してレジヌト上に露光する投影露光装置の光源として
用いた場合、投影レンズの最大性能が引き出せるように
波長を制御することによって、０．５μｍ以下のパター
ンの加工が可能になる。Since the gain bandwidth of these excimer lasers is as wide as about 1 nm, by inserting a wavelength selection element such as a grating or an etalon into the optical resonator, it is possible to oscillate at a desired wavelength within the gain bandwidth. Therefore, if a laser device is equipped with a mechanism that precisely detects and controls the oscillation wavelength, it can be used as a wavelength-tunable ultraviolet laser device for a wide range of applications, such as material processing using optical excitation, processing, and controlling chemical reactions. In addition, when used as a light source for a projection exposure device that reduces and projects the original pattern onto a resin, it is possible to process patterns of 0.5 μm or less by controlling the wavelength to bring out the maximum performance of the projection lens. It becomes possible.
第３図はこのような波長可変レーザの構成を示す図であ
る。第３図において、１はレーザ媒質として希ガスとハ
ロゲンガスを封入した放電管、２は全反射鏡、３は出力
鏡である。４は波長選択装置であシ、共振器内に挿入し
たエタロンの角度を調整することによってレーザ媒質の
利得バンド幅内の任意の波長を選択する。波長検出装置
６はビ−ムスプリンタ６によって取り出されたサンプル
光の中心波長を測定し、レーザ光の発振波長が所望の波
長に一致するように波長選択装置を制御するための電気
信号を波長選択ユニットに送出する。FIG. 3 is a diagram showing the configuration of such a wavelength tunable laser. In FIG. 3, 1 is a discharge tube filled with rare gas and halogen gas as a laser medium, 2 is a total reflection mirror, and 3 is an output mirror. 4 is a wavelength selection device, which selects an arbitrary wavelength within the gain bandwidth of the laser medium by adjusting the angle of an etalon inserted into the resonator. The wavelength detection device 6 measures the center wavelength of the sample light taken out by the beam printer 6, and selects the wavelength of an electrical signal for controlling the wavelength selection device so that the oscillation wavelength of the laser beam matches the desired wavelength. Send to unit.
発明が解決しようとする課題
ところがエキシマレーザは、高電圧で充電したコンデン
サの電荷を一気に放出して媒質ガスを放電励起するパル
スレーザであるため、制御信号に電磁ノイズが乗って波
長選択装置が誤動作し、発振波長が設定した波長からず
れてしまう結果、所望の反応が進まなかったり、投影露
光装置の光源の場合には、投影倍率が変わるため不良品
が発生するという課題があった。本発明はこのような課
題を解決するためなされたもので、電磁ノイズの影響を
受けにくく、発振波長の変化を起こさない波長可変レー
ザ装置を提供するものである。Problems to be Solved by the Invention However, since excimer lasers are pulsed lasers that release the charge of a capacitor charged at high voltage all at once to discharge and excite the medium gas, electromagnetic noise may be added to the control signal, causing the wavelength selection device to malfunction. However, as a result of the oscillation wavelength deviating from the set wavelength, the desired reaction does not proceed, and in the case of a light source for a projection exposure apparatus, the projection magnification changes, resulting in defective products. The present invention has been made to solve these problems, and it is an object of the present invention to provide a wavelength tunable laser device that is less susceptible to the effects of electromagnetic noise and that does not cause changes in the oscillation wavelength.
課題を解決するための手段
この課題を解決するため本発明のレーザ装置は、光共振
器と、単一または複数の波長選択素子と、光信号を受け
て前記波長選択素子の選択波長を制御する波長選択手段
を具備したものである。Means for Solving the Problem In order to solve this problem, the laser device of the present invention includes an optical resonator, a single or plural wavelength selection element, and receiving an optical signal to control the selected wavelength of the wavelength selection element. It is equipped with wavelength selection means.
作 用
この構成により、波長選択装置を制御する信号が電磁ノ
イズで攪乱されることを防止でき、発振波長を安定に制
御できることになる。Effect: With this configuration, it is possible to prevent the signal controlling the wavelength selection device from being disturbed by electromagnetic noise, and it is possible to stably control the oscillation wavelength.
実施例
第１図は本発明の一実施例であるエキシマレ−ザの構成
図である。第１図において本発明の実施例のレーザ装置
は希ガスと・・ロゲンガヌの混合気体をレーザ媒質とす
る放電管１と、全反射鏡２および出力鏡３からなる光共
振器によって、紫外域でレーザ発振する。光共振器の光
軸上には弦長選択素子であるエタロン４′とアクチュエ
ータ４″からなる波長選択装置４が置かれている。エタ
ロン４′は、アクチュエータ４“によって光軸に対する
角度を調節することができる。レーザ光はビームスプリ
ッタ６によって取シ出され、波長検出装置６に入射する
。波長検出装置５は入射した光の中心波長を測定してレ
ーザの発振波長が所定の値になるようにアクチュエータ
４″ を介してエタロン４′の角度を調節する。波長検
出装置６からの信号は光ファイバ７でアクチュエータ４
“に送られている。Embodiment FIG. 1 is a block diagram of an excimer laser which is an embodiment of the present invention. In FIG. 1, the laser device according to the embodiment of the present invention operates in the ultraviolet region by an optical resonator consisting of a discharge tube 1 whose laser medium is a mixture of a rare gas and... Laser oscillates. A wavelength selection device 4 consisting of an etalon 4', which is a string length selection element, and an actuator 4'' is placed on the optical axis of the optical resonator.The etalon 4' adjusts its angle with respect to the optical axis by the actuator 4''. be able to. The laser beam is extracted by a beam splitter 6 and enters a wavelength detection device 6. The wavelength detection device 5 measures the center wavelength of the incident light and adjusts the angle of the etalon 4' via the actuator 4'' so that the oscillation wavelength of the laser becomes a predetermined value.The signal from the wavelength detection device 6 is Actuator 4 with optical fiber 7
“It is being sent to.
本発明の実施例においては、波長検出装置６から送出さ
れる信号を光ファイバ７を通すことによって、電磁ノイ
ズの影響をうけることがなく波長選択装置の誤動作によ
る発振波長の変動を皆無にできた。In the embodiment of the present invention, by passing the signal sent from the wavelength detection device 6 through the optical fiber 7, it is not affected by electromagnetic noise, and it is possible to completely eliminate fluctuations in the oscillation wavelength due to malfunction of the wavelength selection device. .
第２図は本発明の第２の実施例を説明する図である。第
２図の実施例においては波長選択装置はレーザ装置外部
からの信号によって制御される。FIG. 2 is a diagram illustrating a second embodiment of the present invention. In the embodiment of FIG. 2, the wavelength selection device is controlled by signals from outside the laser device.
すなわち、レーザ装置外部に置かれレーザ光を利用する
装置からの信号を受けて、波長制御信号を発生する制御
回路８によってアクチュエータ４″の角度を制御してい
る。この時も、制御回路８からの信号は光ファイバ７全
通してアクチュエータ４“に送られていることは言うま
でもない。That is, the angle of the actuator 4'' is controlled by a control circuit 8 that receives a signal from a device that is placed outside the laser device and uses laser light, and generates a wavelength control signal. It goes without saying that the signal is sent to the actuator 4'' through the entire optical fiber 7.
以上のような構成を有するので本発明による波長可変レ
ーザ装置は、波長選択装置が電磁ノイズで誤動作するこ
とがなく、設定した中心波長を安定に保持することがで
きる。Since the wavelength tunable laser device according to the present invention has the above configuration, the wavelength selection device does not malfunction due to electromagnetic noise, and the set center wavelength can be stably maintained.
発明の詳細
な説明したように本発明によるレーザ装置は、光信号に
よって波長選択装置を制御することによって、設定した
発振波長を安定に保持できるというすぐれた効果を有す
るレーザ装置を提供することができる。As described in detail, the laser device according to the present invention can provide a laser device having an excellent effect of stably maintaining a set oscillation wavelength by controlling the wavelength selection device using an optical signal. .
Ｆ！Ｊ１図は本発明の一実施例である波長可変レーザ装
置の構成図、第２図は本発明の詳細な説明するための図
、第３図は従来の波長可使レーザの一構成を示す図であ
る。
１・・・・・・放電管、２・・・・・・全反射鏡、３・
・・・・・出力鏡、４・・・・・・波長選択ユニット、
４′・・・・・・エタロン、４″・・・・・アクチュエ
ータ、５・・・・・・波長検出装置、６・・・・・・ビ
ームスプリッタ、７・・・・・光ファイバ、８・・・・
・・制御回路。
代理人の氏名 弁理士 粟 野 重 孝 ほか１名１−
該４１ｔ、曾
２−全及村銭
３− 化７Ｉ金灸
４’−−−Ｌ ９ Ｅｌｌン
「−−−ア２ナユ丁−夕
５−清天密兄孜１
’７−ｉ五プＹイ、＜ＩF! Figure J1 is a configuration diagram of a wavelength tunable laser device that is an embodiment of the present invention, Figure 2 is a diagram for explaining the present invention in detail, and Figure 3 is a diagram showing the configuration of a conventional wavelength tunable laser. It is. 1...discharge tube, 2...total reflection mirror, 3.
...Output mirror, 4...Wavelength selection unit,
4'...Etalon, 4''...Actuator, 5...Wavelength detection device, 6...Beam splitter, 7...Optical fiber, 8・・・・・・
...Control circuit. Name of agent: Patent attorney Shigetaka Awano and 1 other person1-
Said 41t, Zeng 2-Zen Oimurasen 3- 7I Kinmoxibustion 4'---L 9 Elln'---A 2 Nayu Ding-Yu 5-Seiten Mitsu Brother Kei 1 '7-i 5pu Y I, <I
Claims (1)
を受けて前記波長選択素子の選択波長を制御する波長選
択手段とを具備したことを特徴とする波長可変レーザ装
置。A wavelength tunable laser device comprising an optical resonator, a single wavelength selection element or a plurality of wavelength selection elements, and wavelength selection means for receiving an optical signal and controlling the selection wavelength of the wavelength selection element.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19496988A JPH0243785A (en) | 1988-08-04 | 1988-08-04 | Wavelength variable laser device |
| EP88115902A EP0310000B1 (en) | 1987-09-28 | 1988-09-27 | Laser apparatus |
| CA000578540A CA1302548C (en) | 1987-09-28 | 1988-09-27 | Laser apparatus |
| DE3889831T DE3889831T2 (en) | 1987-09-28 | 1988-09-27 | Laser apparatus. |
| US07/499,206 US4991178A (en) | 1987-09-28 | 1990-03-19 | Laser apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19496988A JPH0243785A (en) | 1988-08-04 | 1988-08-04 | Wavelength variable laser device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0243785A true JPH0243785A (en) | 1990-02-14 |
Family
ID=16333354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19496988A Pending JPH0243785A (en) | 1987-09-28 | 1988-08-04 | Wavelength variable laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0243785A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0611370U (en) * | 1992-07-10 | 1994-02-10 | 有限会社光伸光学 | Optimal wavelength setting device for tunable semiconductor laser |
-
1988
- 1988-08-04 JP JP19496988A patent/JPH0243785A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0611370U (en) * | 1992-07-10 | 1994-02-10 | 有限会社光伸光学 | Optimal wavelength setting device for tunable semiconductor laser |
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