JPH0241400U - - Google Patents

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Publication number
JPH0241400U
JPH0241400U JP12018788U JP12018788U JPH0241400U JP H0241400 U JPH0241400 U JP H0241400U JP 12018788 U JP12018788 U JP 12018788U JP 12018788 U JP12018788 U JP 12018788U JP H0241400 U JPH0241400 U JP H0241400U
Authority
JP
Japan
Prior art keywords
plasma
plasma source
container
chamber container
view
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12018788U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP12018788U priority Critical patent/JPH0241400U/ja
Publication of JPH0241400U publication Critical patent/JPH0241400U/ja
Pending legal-status Critical Current

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  • Electron Sources, Ion Sources (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図はこの考案の一実施例に係るプラズマ源
を示すものであり、Ａはその正面断面図、Ｂは側
面断面図、Ｃ上面図である。第２図は、この考案
の他の実施例に係るプラズマ源を示す断面図であ
る。第３図は、この考案の更に他の実施例に係る
プラズマ源を示す斜視図である。第４図は、第１
図のようなプラズマ源を用いたイオン源の一例を
示す断面図である。第５図は、従来のプラズマ源
の一例を示す斜視図である。 ２０……プラズマ室容器、２４……放電電極、
２６，２８……絶縁物、３０……プラズマ、３２
……高周波電源、４０……ガス導入管。 FIG. 1 shows a plasma source according to an embodiment of this invention, in which A is a front sectional view, B is a side sectional view, and C is a top view. FIG. 2 is a sectional view showing a plasma source according to another embodiment of the invention. FIG. 3 is a perspective view showing a plasma source according to still another embodiment of the invention. Figure 4 shows the first
FIG. 2 is a cross-sectional view showing an example of an ion source using the plasma source shown in the figure. FIG. 5 is a perspective view showing an example of a conventional plasma source. 20... plasma chamber container, 24... discharge electrode,
26, 28... Insulator, 30... Plasma, 32
...High frequency power supply, 40...Gas introduction pipe.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] プラズマ室容器内にガスを導入してそれを高周
波放電によつて分解してプラズマを発生させる構
成のプラズマ源において、前記プラズマ室容器を
金属製とし、かつその中に複数本の棒状の放電電
極を当該容器と電気的に絶縁して挿入したことを
特徴とするプラズマ源。 In a plasma source configured to introduce gas into a plasma chamber container and decompose it by high-frequency discharge to generate plasma, the plasma chamber container is made of metal, and a plurality of rod-shaped discharge electrodes are provided therein. A plasma source characterized in that a plasma source is inserted electrically insulated from the container.
JP12018788U 1988-09-13 1988-09-13 Pending JPH0241400U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12018788U JPH0241400U (en) 1988-09-13 1988-09-13

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12018788U JPH0241400U (en) 1988-09-13 1988-09-13

Publications (1)

Publication Number Publication Date
JPH0241400U true JPH0241400U (en) 1990-03-22

Family

ID=31366074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12018788U Pending JPH0241400U (en) 1988-09-13 1988-09-13

Country Status (1)

Country Link
JP (1) JPH0241400U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000018198A1 (en) * 1998-09-24 2000-03-30 Seiko Epson Corporation Substrate electrode plasma generator and substance/material processing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000018198A1 (en) * 1998-09-24 2000-03-30 Seiko Epson Corporation Substrate electrode plasma generator and substance/material processing method

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