JPH0234444B2 - INDAKUTANSUSOSHINOKEISEIHOHO - Google Patents
INDAKUTANSUSOSHINOKEISEIHOHOInfo
- Publication number
- JPH0234444B2 JPH0234444B2 JP21994384A JP21994384A JPH0234444B2 JP H0234444 B2 JPH0234444 B2 JP H0234444B2 JP 21994384 A JP21994384 A JP 21994384A JP 21994384 A JP21994384 A JP 21994384A JP H0234444 B2 JPH0234444 B2 JP H0234444B2
- Authority
- JP
- Japan
- Prior art keywords
- winding
- conductive path
- inductance element
- chip
- insulated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004804 winding Methods 0.000 claims description 74
- 239000000758 substrate Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 11
- 230000000694 effects Effects 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/10—Connecting leads to windings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/29—Terminals; Tapping arrangements for signal inductances
- H01F27/292—Surface mounted devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/328—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10287—Metal wires as connectors or conductors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10628—Leaded surface mounted device
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/0285—Using ultrasound, e.g. for cleaning, soldering or wet treatment
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing Cores, Coils, And Magnets (AREA)
- Coils Or Transformers For Communication (AREA)
Description
【発明の詳細な説明】
(イ) 産業上の利用分野
本発明はインダクタンス素子の形成方法、特に
超音波ボンデイング装置を用いたインダクタンス
素子の形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a method for forming an inductance element, and particularly to a method for forming an inductance element using an ultrasonic bonding apparatus.
(ロ) 従来の技術
最近チツプ部品の進歩に伴い、電子回路の混成
集積回路化が著しく発展して来た。混成集積回路
は半導体集積回路の他にその外付部品であるコン
デンサ、抵抗、コイル等を１パツケージに収容す
ることにより、電子機器の部品点数を大巾に低減
でき、且つ組立の簡素化や保守点検の容易化が図
れる利点を有する。(b) Prior Art Recently, with the progress of chip components, hybrid integrated circuits of electronic circuits have been significantly developed. By accommodating a semiconductor integrated circuit and its external components such as capacitors, resistors, and coils in a single package, hybrid integrated circuits can greatly reduce the number of parts in electronic devices, and also simplify assembly and maintenance. This has the advantage of facilitating inspection.
しかしインダクタンス素子に関しては小型チツ
プ化が大巾に遅れている状況にある。これは導体
を巻回して形成するコイルでは、チツプ部品とし
て基板に実装する場合のハンダ・デイツプにおい
て導体を被覆する絶縁体の耐熱性と導体と外部端
子との接続に解決できない問題点が残つているか
らである。 However, with regard to inductance elements, miniaturization of chips is far behind. This is because coils formed by winding a conductor have unresolved problems in the heat resistance of the insulator that covers the conductor and the connection between the conductor and external terminals in the solder dip when mounted on a board as a chip component. Because there is.
従来の小型インダクタンス素子としては第４図
及び第５図に示すものを挙げることができる（例
えば特開昭57−92807号公報参照）。第４図は磁性
体、例えばドラム型コア２０に巻線２１を施し、
巻線端末２２，２２をコア２０の両端鍔部２３，
２３の端面に形成された銀電極２４，２４の表面
に折り曲げた後、半田２５，２５を介して巻線端
末、電極及びリード線２６，２６を電気的に接続
してなる小型インダクタンス素子である。第５図
は、予じめ鍔部２３底面にリード線２６，２６を
突設したドラム型コア２０の巻回部に巻線２１を
施し、巻線端末２２，２２をそれぞれリード線２
６，２６に絡げて半田２５，２５により接続した
小型インダクタンス素子である。いずれの小型イ
ンダクタンス素子もリード線２６，２６、半田２
５，２５を必要とし、チツプ抵抗やチツプコンデ
ンサの様に小型化できないのである。 Examples of conventional small inductance elements include those shown in FIGS. 4 and 5 (see, for example, Japanese Patent Laid-Open No. 57-92807). FIG. 4 shows a magnetic material, for example, a drum-shaped core 20 with a winding 21,
The winding terminals 22, 22 are connected to both end flanges 23 of the core 20,
It is a small inductance element formed by bending the surface of silver electrodes 24, 24 formed on the end faces of 23, and then electrically connecting the winding terminals, electrodes, and lead wires 26, 26 via solders 25, 25. . In FIG. 5, a winding 21 is applied to the winding portion of a drum-shaped core 20, which has lead wires 26, 26 protruding from the bottom surface of the flange 23, and winding ends 22, 22 are connected to the lead wires 2, 26, respectively.
6 and 26 and connected by solders 25 and 25. Both small inductance elements have lead wires 26, 26 and solder 2
5.25, and cannot be miniaturized like chip resistors and chip capacitors.
そこで第６図に示すチツプインダクタンス素子
が特開昭59−43513号公報に提案されている。第
６図ではドラム型コア２０に巻線２１を施し、コ
ア２０の鍔部２３底面に離間した銀電極２４，２
４を設け、巻線端末を銀電極２４，２４表面まで
折り曲げた後半田２５，２５で銀電極２４，２４
に接続されている。斯るチツプインダクタンス素
子は銀電極２４，２４上の半田２５，２５を用い
て所望の電極に固着される。 Therefore, a chip inductance element shown in FIG. 6 has been proposed in Japanese Patent Laid-Open No. 59-43513. In FIG. 6, a winding 21 is applied to a drum-shaped core 20, and silver electrodes 24, 2 are spaced apart on the bottom surface of the flange 23 of the core 20.
4, and the silver electrodes 24, 24 are connected to the silver electrodes 24, 24 by bending the ends of the windings to the surface of the silver electrodes 24, 24.
It is connected to the. Such a chip inductance element is fixed to a desired electrode using solder 25, 25 on the silver electrodes 24, 24.
(ハ) 発明が解決しようとする問題点
しかしながら上述した小型インダクタンス素子
およびチツプインダクタンス素子では実装する際
の半田付け温度により巻線の絶縁被覆材料が溶け
てレアシヨート不良を招くことがあつた。またチ
ツプインダクタンス素子では多量の半田が銀電極
に付着しがちで且つその量も一定しないので傾い
た状態で固着されるおそれもあつた。(c) Problems to be Solved by the Invention However, in the above-mentioned small inductance elements and chip inductance elements, the insulation coating material of the windings melts due to the soldering temperature during mounting, which may lead to a defective rearrangement. Further, in chip inductance elements, a large amount of solder tends to adhere to the silver electrodes, and the amount is not constant, so there is a risk that the solder may be stuck in an inclined state.
(ニ) 問題点を解決するための手段
本発明は斯点に鑑みてなされ、絶縁巻線を超音
波ボンデイング装置を用いて直接絶縁基板上にイ
ンダクタンス素子を形成することにより、従来の
欠点を完全に除去するものである。(d) Means for Solving the Problems The present invention has been made in view of the above points, and completely eliminates the drawbacks of the conventional method by directly forming an inductance element on an insulating substrate using an ultrasonic bonding device for an insulated winding. It is intended to be removed.
(ホ) 作用
本発明に依れば、絶縁巻線が直接導電路上に超
音波ボンデイング行なえる点に着目し、超音波ボ
ンデイング装置でボンデイングワイヤーを巻回し
てインダクタンス素子を形成している。(E) Effects According to the present invention, attention is paid to the fact that an insulated winding can be ultrasonically bonded directly onto a conductive path, and an inductance element is formed by winding a bonding wire using an ultrasonic bonding device.
(ヘ) 実施例
本発明の一実施例を第１図イ乃至第１図ニを参
照して詳述する。(F) Embodiment An embodiment of the present invention will be described in detail with reference to FIGS. 1A to 1D.
本発明の第１の工程は絶縁基板１上に導電路２
を形成し且つ巻枠体３を配置することにある（第
１図イ参照）。絶縁基板１は支持基板として働き、
セラミツク基板、ガラスエポキシ樹脂等より成る
プリント基板、表面をアルマイト処理したアルミ
ニウム基板等を用いる。斯る絶縁基板１上にはそ
の一主面に全面に銅箔を貼り着けた後、選択的に
銅箔をエツチングして所望のパターンの導電路２
を形成する。導電路２はインダクタンス素子の巻
線を接続するパツドのみならず、混成集積回路の
形成に必要な導電路を同時に形成するのが望まし
い。 The first step of the present invention is to form a conductive path 2 on an insulating substrate 1.
The main purpose is to form the winding frame 3 and arrange the winding frame 3 (see FIG. 1A). The insulating substrate 1 acts as a supporting substrate,
A ceramic substrate, a printed circuit board made of glass epoxy resin, etc., an aluminum substrate whose surface is alumite-treated, etc. are used. A copper foil is pasted on the entire surface of one main surface of the insulating substrate 1, and then the copper foil is selectively etched to form conductive paths 2 in a desired pattern.
form. It is desirable that the conductive path 2 not only be used as a pad for connecting the windings of the inductance element, but also as a conductive path necessary for forming a hybrid integrated circuit.
巻枠体３はインダクタンス素子を形成する巻線
を巻回させる役目を有し、形成するインダクタン
ス素子のリアクタンスの値によりフエライト等の
磁性体よりなるコアやプラスチツク等の絶縁物を
用いても良い。なお巻枠体３の形状は図示した筒
状でも良いが、その他に棒状あるいはＥ型若しく
はＩ型形状でも良い。巻枠体３は接着材４により
導電路２に近接した絶縁基板１上に固定配置され
ている。 The winding frame 3 has the role of winding the winding wire forming the inductance element, and depending on the reactance value of the inductance element to be formed, a core made of a magnetic material such as ferrite or an insulating material such as plastic may be used. The shape of the winding frame 3 may be the cylindrical shape shown in the figure, but it may also be rod-shaped, E-shaped, or I-shaped. The winding frame 3 is fixedly arranged on the insulating substrate 1 close to the conductive path 2 by means of an adhesive 4.
本発明の第２の工程は超音波ボンデイング装置
を用いて一の導電路２上に巻線５の一端を超音波
ボンデイングすることにある（第１図ロ参照）。 The second step of the present invention consists in ultrasonically bonding one end of the winding 5 onto one conductive path 2 using an ultrasonic bonding device (see FIG. 1B).
本発明に用いる絶縁巻線は第２図に示す如く、
50〜800μφの銅細線６とその表面を被覆するウレ
タンあるいは弗化エチレンより成る絶縁被膜７で
形成されている。絶縁被膜７は銅磁線６をウレタ
ンあるいは弗化エチレン溶液中を通して10〜50μ
厚（平均的には20μ厚）に付着され、インダクタ
ンス素子を形成する各巻線の絶縁をしている。 The insulated winding used in the present invention is as shown in FIG.
It is formed of a thin copper wire 6 of 50 to 800 μΦ and an insulating coating 7 made of urethane or fluorinated ethylene covering its surface. The insulating coating 7 is made by passing the copper magnetic wire 6 through a urethane or fluorinated ethylene solution to a thickness of 10 to 50 μm.
It is deposited thickly (on average 20μ thick) and insulates each winding that forms the inductance element.
本発明に用いる超音波ボンデイング装置は第３
図に示す如く、テーブル８、キヤピラリチツプ
９、超音波振動源１０、クランプ１１、リール１
２および絶縁巻線５より構成されている。斯る超
音波ボンデイング装置は既知のものであり、半導
体装置の組立に広く利用されている。簡単に動作
を説明すると、テーブル８上に載置したトランジ
スタ等の電極にキヤピラリチツプ９の中央の孔よ
り導出されるアルミニウムボンデイング細線の一
端を20K〜60KHzの超音波振動を与えて固着し、
然る後キヤピラリチツプ９を移動して他のリード
にアルミニウムボンデイング細線の他端を超音波
振動を与えて固着する様に作業する。本発明に用
いる超音波ボンデイング装置は斯る半導体装置の
組立に用いるものにいくつかの改良を加えてい
る。第１にリール１２にはインダクタンス素子の
形成のため絶縁巻線５が貯蔵されている。第２に
超音波振動源は半導体装置の組立用よりは若干パ
ワーアツプしている。第３にテーブル８にはXY
軸移動装置１３とＺ軸移動装置１４が設けられ、
テーブル８をＸ・Ｙ・Ｚ方向に自在に可動できる
構造となつている。第４にテーブル８は回転装置
１５が設けられ、テーブル８をXYの任意の座標
を中心に回転できる。 The ultrasonic bonding device used in the present invention is the third
As shown in the figure, a table 8, a capillary chip 9, an ultrasonic vibration source 10, a clamp 11, a reel 1
2 and an insulated winding 5. Such ultrasonic bonding equipment is known and widely used in the assembly of semiconductor devices. Briefly explaining the operation, one end of the thin aluminum bonding wire led out from the central hole of the capillary chip 9 is fixed to the electrode of a transistor etc. placed on the table 8 by applying ultrasonic vibrations of 20K to 60KHz.
Thereafter, the capillary chip 9 is moved and the other end of the thin aluminum bonding wire is fixed to another lead by applying ultrasonic vibration. The ultrasonic bonding apparatus used in the present invention has several improvements over those used for assembling such semiconductor devices. First, an insulated winding 5 is stored on the reel 12 for forming an inductance element. Second, ultrasonic vibration sources have slightly more power than those used for assembling semiconductor devices. Third, table 8 has XY
An axis moving device 13 and a Z-axis moving device 14 are provided,
The structure is such that the table 8 can be freely moved in the X, Y, and Z directions. Fourthly, the table 8 is provided with a rotation device 15, which allows the table 8 to be rotated around arbitrary XY coordinates.
本工程では斯上の超音波ボンデイング装置のテ
ーブル８上に絶縁基板１を真空の吸引力を利用し
て固定し、一の導電路２がキヤピラリチツプ９の
真下に来る様にテーブル８をXY軸移動装置１３
で移動させる。続いてキヤピラリチツプ９を下降
して一の導電路２に絶縁巻線５の一端を超音波振
動により固着する。絶縁巻線５は断面円形の銅細
線を用いているので、導電路２との接点に超音波
振動のエネルギーが集中して絶縁被膜７が破れて
銅細線が露出される。そして銅細線と銅の導電路
２との同一材料の結合により超音波ボンデイング
が実現できる。 In this process, the insulating substrate 1 is fixed on the table 8 of the ultrasonic bonding device using vacuum suction, and the table 8 is moved in the XY axes so that the first conductive path 2 is directly below the capillary chip 9. Device 13
to move it. Subsequently, the capillary chip 9 is lowered and one end of the insulating winding 5 is fixed to one conductive path 2 by ultrasonic vibration. Since the insulating winding 5 uses a thin copper wire with a circular cross section, the energy of the ultrasonic vibration is concentrated at the point of contact with the conductive path 2, and the insulating coating 7 is torn, exposing the thin copper wire. Ultrasonic bonding can be realized by bonding the thin copper wire and the copper conductive path 2 of the same material.
本発明の第３の工程は絶縁基板１を回転させて
絶縁巻線５を巻枠体３に巻回させることにある
（第１図ハ参照）。 The third step of the present invention consists in rotating the insulating substrate 1 and winding the insulating winding 5 around the winding frame 3 (see FIG. 1C).
本工程では巻枠体３に所定のターン数だけ絶縁
巻線５を巻回し、所望の値のインダクタンス素子
を形成できる。前工程で絶縁巻線５の一端は一の
導電路２に固着されているので、XY軸移動装置
１３により絶縁基板１を移動して巻枠体３に絶縁
巻線５がからむ様にする。続いてXY軸移動装置
１３を用いて巻枠体３の中心あるいは中心近傍に
回転の中心が設定される様に移動する。然る後超
音波ボンデイング装置の回転装置１５を作動させ
て巻枠体３を回転させてリール１２より給送され
る絶縁巻線５を巻枠体３に均一に所定のターン数
だけ巻回する。なお巻枠体３に均一な厚みに絶縁
巻線５を巻回するためにＺ軸移動装置１４を用い
てテーブルを上下動させて巻枠体３の位置を上下
動させることにより均一な巻回を実現できる。更
に本発明では巻枠体３を回転させることにより絶
縁巻線５を一定の張力で巻回でき、且つターン数
が多くても全く任意に設定できる。 In this step, the insulated winding 5 is wound around the winding frame 3 by a predetermined number of turns, thereby forming an inductance element having a desired value. Since one end of the insulated winding 5 was fixed to one conductive path 2 in the previous step, the insulated substrate 1 is moved by the XY axis moving device 13 so that the insulated winding 5 is entangled with the winding frame 3. Subsequently, the XY axis moving device 13 is used to move the winding frame 3 so that the center of rotation is set at or near the center. Thereafter, the rotating device 15 of the ultrasonic bonding device is operated to rotate the winding frame 3, and the insulated winding 5 fed from the reel 12 is evenly wound around the winding frame 3 by a predetermined number of turns. . In order to wind the insulated winding 5 around the winding frame 3 to a uniform thickness, the Z-axis moving device 14 is used to move the table up and down to move the position of the winding frame 3 up and down, thereby achieving uniform winding. can be realized. Furthermore, in the present invention, by rotating the winding frame 3, the insulating winding 5 can be wound with a constant tension, and even if the number of turns is large, it can be set completely arbitrarily.
本発明で秀れた点は巻枠体３としてＥ型のもの
でもＩ型のものでも絶縁巻線５を巻回できること
にある。即ちＩ型の巻枠体３においてはキヤピラ
リチツプ９の高さをＩ型の巻枠体３に対応する様
に配置すれば良いからである。またＥ型のコアで
はキヤピラリチツプ９をＥ型のすき間に配置すれ
ば良いからである。 The advantage of the present invention is that the insulated winding 5 can be wound on either an E-type or an I-type winding frame 3. That is, in the I-shaped winding frame 3, the height of the capillary tip 9 may be arranged so as to correspond to the I-shaped winding frame 3. Further, in the case of an E-shaped core, the capillary chip 9 may be placed in the E-shaped gap.
本発明の第４の工程は絶縁巻線５の他端を他の
導電路２に超音波ボンデイングすることにある
（第１図ニ参照）。 The fourth step of the invention consists in ultrasonically bonding the other end of the insulated winding 5 to another conductive path 2 (see FIG. 1D).
本工程では超音波ボンデイング装置のテーブル
８をXY軸移動装置１３で移動させ、キヤピラリ
チツプ９を他の導電路２上に持つて来る。続いて
キヤピラリチツプ９を下降させて他の導電路２と
当接させて超音波振動を加え、絶縁巻線５の他端
を超音波ボンデイングする。なお絶縁巻線５はキ
ヤピラリチツプ９の上昇時にカツター等を用いて
切断する。なおこのときに絶縁巻線５はクランプ
１１で挾んでおく。 In this step, the table 8 of the ultrasonic bonding device is moved by the XY axis moving device 13 to bring the capillary chip 9 onto another conductive path 2. Subsequently, the capillary chip 9 is lowered and brought into contact with another conductive path 2, and ultrasonic vibration is applied to the other end of the insulating winding 5 for ultrasonic bonding. Note that the insulated winding 5 is cut using a cutter or the like when the capillary chip 9 is raised. At this time, the insulated winding 5 is held between the clamps 11.
以上に詳述した工程は１つのインダクタンス素
子を形成する工程にあり、この工程を繰り返し行
うことによつて複数のインダクタンス素子を形成
することができる。即ち第１の位置に第１のイン
ダクタンス素子を形成した後、テーブル８をXY
軸移動装置１３で移動して第２の位置に同様に第
２のインダクタンス素子を形成できる。また複数
のインダクタンス素子はキヤピラリチツプ９の回
転数を制御することにより任意の値のインダクタ
ンス素子を形成でき、チユーナー回路等では有用
である。 The process detailed above is a process of forming one inductance element, and by repeating this process, a plurality of inductance elements can be formed. That is, after forming the first inductance element at the first position, the table 8 is
A second inductance element can be similarly formed at a second position by moving with the axis moving device 13. Furthermore, by controlling the rotational speed of the capillary chip 9, a plurality of inductance elements can be formed to have an arbitrary value, and are useful in tuner circuits and the like.
(ト) 発明の効果
本発明の第１の効果はインダクタンス素子を絶
縁基板１上に直接形成できることにある。即ち本
発明では巻枠体３と絶縁巻線５と最少限の部品で
インダクタンス素子を形成できるので、従来のチ
ツプインダクタンスに比べてきわめて小型で安価
なものを得ることができる。(G) Effects of the Invention The first effect of the invention is that the inductance element can be formed directly on the insulating substrate 1. That is, in the present invention, since the inductance element can be formed using the minimum number of components including the winding frame 3 and the insulated winding 5, it is possible to obtain an inductance element that is extremely small and inexpensive compared to conventional chip inductances.
本発明の第２の効果は絶縁基板１を回転させて
巻枠体３に絶縁巻線５を巻回するので、絶縁巻線
５を短時間で、均一に、多いターン数でも巻回で
きるのである。この結果広に値のインダクタンス
素子を容易に得られ、回路構成上必要なインダク
タンス素子をほとんど実現できるのである。 The second advantage of the present invention is that since the insulating substrate 1 is rotated and the insulating winding 5 is wound around the winding frame 3, the insulating winding 5 can be wound evenly in a short time and even with a large number of turns. be. As a result, inductance elements with a wide range of values can be easily obtained, and almost all the inductance elements necessary for circuit configuration can be realized.
本発明の第３の効果は絶縁基板１を回転させて
いるので、超音波ボンデイング装置のテーブル８
のみを回転装置１５で回転する構成を採れ、簡単
な構成で実現できる。 The third effect of the present invention is that since the insulating substrate 1 is rotated, the table 8 of the ultrasonic bonding apparatus
It is possible to adopt a configuration in which only the rotation device 15 rotates the rotation device 15, and it can be realized with a simple configuration.
本発明の第４の効果はインダクタンス素子を絶
縁基板１上の任意の位置に連続して形成できるこ
とにある。即ち超音波ボンデイング装置のテーブ
ル８をXY軸移動装置１３で移動させてインダク
タンス素子の形成を繰り返し行なえば良い。 A fourth effect of the present invention is that inductance elements can be continuously formed at arbitrary positions on the insulating substrate 1. That is, the table 8 of the ultrasonic bonding device may be moved by the XY axis moving device 13 to repeatedly form the inductance element.
本発明の第５の効果はインダクタンス素子を任
意の値に設定できることになる。即ち各インダク
タンス素子の形成工程に於いて絶縁巻線５のター
ン数をプログラムすれば良い。この結果多種のイ
ンダクタンスを必要とするチユーナー回路等では
きわめて利用価値が高い。 The fifth effect of the present invention is that the inductance element can be set to any value. That is, the number of turns of the insulated winding 5 may be programmed in the process of forming each inductance element. As a result, it is extremely useful in tuner circuits that require various types of inductance.
本発明の第６の効果はインダクタンス素子の形
成工程で加熱工程を必要としたことにある。即ち
本発明では絶縁巻線５と導電路２との接続を超音
波ボンデイングで行うので、加熱により絶縁被膜
７が溶けてレアシヨートを発生することが皆無と
なる。 A sixth effect of the present invention is that a heating process is not required in the process of forming the inductance element. That is, in the present invention, since the connection between the insulating winding 5 and the conductive path 2 is carried out by ultrasonic bonding, there is no possibility that the insulating coating 7 will melt due to heating and generate a reasyot.
本発明の第７の効果はインダクタンス素子の形
成と同時にジヤンパー線の形成も行うことができ
ることにある。即ちインダクタンス素子の形成工
程で絶縁巻線５の回巻を止めれば任意の導電路２
間のジヤンパー線を形成できる。 A seventh effect of the present invention is that the jumper wire can be formed simultaneously with the formation of the inductance element. That is, if the winding of the insulating winding 5 is stopped in the process of forming the inductance element, any conductive path 2 can be formed.
A jumper line can be formed between the two.
本発明の第８の効果は超音波ボンデイング装置
にパターン認識およびプログラム可能なメモリを
付加することによつてインダクタンス素子を自動
的に形成することができる。 An eighth effect of the present invention is that an inductance element can be automatically formed by adding pattern recognition and a programmable memory to an ultrasonic bonding apparatus.
第１図イ乃至第１図ニは本発明に依るインダク
タンス素子の形成方法を説明する断面図、第２図
は本発明に用いる絶縁巻線を説明する断面図、第
３図は本発明に用いる超音波ボンデイング装置を
説明するブロツク図、第４図乃至第６図は従来の
小型インダクタンス素子およびチツプインダクタ
ンス素子を説明する断面図である。
主な図番の説明、１は絶縁基板、２は導電路、
３は巻枠体、５は絶縁巻線、９はキヤピラリチツ
プ、１５は回転装置である。
FIGS. 1A to 1D are cross-sectional views explaining the method of forming an inductance element according to the present invention, FIG. 2 is a cross-sectional view explaining the insulated winding used in the present invention, and FIG. A block diagram illustrating an ultrasonic bonding apparatus and FIGS. 4 to 6 are cross-sectional views illustrating conventional small inductance elements and chip inductance elements. Explanation of the main drawing numbers, 1 is an insulated substrate, 2 is a conductive path,
3 is a winding frame body, 5 is an insulated winding, 9 is a capillary chip, and 15 is a rotating device.
Claims (1)
回させる巻枠体を配置する工程と、超音波ボンデ
イング装置のキヤピラリチツプを一の導電路上に
位置させ前記巻線の一端を前記導電路に超音波ボ
ンデイングする工程と、前記キヤピラリチツプを
他の位置に移動して固定し前記絶縁基板を回転さ
せて前記巻枠体を前記キヤピラリチツプの周囲を
回転させて前記巻線を前記巻枠体に巻回させる工
程と、前記キヤピラリチツプを他の導電路上に位
置させ前記巻線の他端を前記導電路に超音波ボン
デイングする工程とを具備することを特徴とした
インダクタンス素子の形成方法。1. A step of providing a conductive path on an insulating substrate and arranging a winding frame around which an insulated winding is wound, and positioning a capillary chip of an ultrasonic bonding device on one conductive path and attaching one end of the winding to the conductive path. a step of ultrasonic bonding, moving the capillary chip to another position and fixing it, rotating the insulating substrate, rotating the winding frame around the capillary chip, and winding the winding wire around the winding frame; A method for forming an inductance element, comprising the steps of: placing the capillary chip on another conductive path and ultrasonically bonding the other end of the winding to the conductive path.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21994384A JPH0234444B2 (en) | 1984-10-18 | 1984-10-18 | INDAKUTANSUSOSHINOKEISEIHOHO |
| DE19853536908 DE3536908A1 (en) | 1984-10-18 | 1985-10-16 | INDUCTIVE ELEMENT AND METHOD FOR PRODUCING THE SAME |
| NL8502843A NL192157C (en) | 1984-10-18 | 1985-10-17 | Method for the manufacture of an inductance element. |
| GB08525605A GB2166005B (en) | 1984-10-18 | 1985-10-17 | Inductance element and method of manufacturing the same |
| FR858515516A FR2572214B1 (en) | 1984-10-18 | 1985-10-18 | INDUCTIVE ELEMENT AND MANUFACTURING METHOD THEREOF |
| CN85108084A CN1007943B (en) | 1984-10-18 | 1985-10-18 | Inductance element and method of mfg. the same |
| US07/084,332 US4860433A (en) | 1984-10-18 | 1987-08-11 | Method of manufacturing an inductance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21994384A JPH0234444B2 (en) | 1984-10-18 | 1984-10-18 | INDAKUTANSUSOSHINOKEISEIHOHO |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6197808A JPS6197808A (en) | 1986-05-16 |
| JPH0234444B2 true JPH0234444B2 (en) | 1990-08-03 |
Family
ID=16743457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21994384A Expired - Lifetime JPH0234444B2 (en) | 1984-10-18 | 1984-10-18 | INDAKUTANSUSOSHINOKEISEIHOHO |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0234444B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4340594C2 (en) * | 1992-12-01 | 1998-04-09 | Murata Manufacturing Co | Method of manufacturing and adjusting the characteristics of a surface mount chip type LC filter |
-
1984
- 1984-10-18 JP JP21994384A patent/JPH0234444B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6197808A (en) | 1986-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4860433A (en) | Method of manufacturing an inductance element | |
| US5212345A (en) | Self leaded surface mounted coplanar header | |
| JPH0945825A (en) | Mount for supporting high-frequency transformer in upper part of component on substrate in hybrid module and assembling method of hybrid module | |
| JPH0234444B2 (en) | INDAKUTANSUSOSHINOKEISEIHOHO | |
| JPH0234443B2 (en) | INDAKUTANSUSOSHINOKEISEIHOHO | |
| JPH0234442B2 (en) | INDAKUTANSUSOSHINOKEISEIHOHO | |
| JPH0363802B2 (en) | ||
| JPH0234445B2 (en) | INDAKUTANSUSOSHINOKEISEIHOHO | |
| JPH0234446B2 (en) | INDAKUTANSUSOSHI | |
| JPS61124118A (en) | Forming method of inductance element | |
| US4745682A (en) | Method of connecting coil | |
| JPH063769B2 (en) | Inductance element formation method | |
| JPS6197809A (en) | Inductance element | |
| JPH02140906A (en) | Connection structure of lead wire | |
| JPH0372607A (en) | Inductance element | |
| JP2002134893A (en) | Method for manufacturing hybrid integrated circuit device | |
| JPH0432815Y2 (en) | ||
| JPH10256073A (en) | Coil part | |
| JPH0644533B2 (en) | Inductance element | |
| JPS60152088A (en) | Electronic circuit device | |
| JPH0590032A (en) | Coil element | |
| JPH097856A (en) | Circuit component | |
| JPH0531213U (en) | Trance | |
| JPS60242605A (en) | Chip type coil | |
| JP2005150176A (en) | Thin-film micro-inductor and its manufacturing method |