JPH0233974A - Manufacture of pressure converter - Google Patents
Manufacture of pressure converterInfo
- Publication number
- JPH0233974A JPH0233974A JP18401888A JP18401888A JPH0233974A JP H0233974 A JPH0233974 A JP H0233974A JP 18401888 A JP18401888 A JP 18401888A JP 18401888 A JP18401888 A JP 18401888A JP H0233974 A JPH0233974 A JP H0233974A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thickness
- substrate
- film
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000002463 transducing effect Effects 0.000 description 2
- -1 (5KOI-4 Substances 0.000 description 1
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 1
- 235000017491 Bambusa tulda Nutrition 0.000 description 1
- 241001330002 Bambuseae Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000011425 bamboo Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野］ この発明は半導体基板にひずみ抵抗素子が設ける。[Detailed description of the invention] [Industrial application field] In this invention, a strain resistance element is provided on a semiconductor substrate.
第２図は従来の圧力変換素子を示す所面図である。同図
に示すように、３ｉ単結晶塁板１の中央に起歪ダイヤフ
ラムとなる肉薄部２を有してＪ″３つ、３ｉ単結晶塁板
１外周部の肉厚部３の裏面を台４上に接着剤５により固
着している。３ｉ単結晶基板１の肉薄部２の上層部には
、ひずみ抵抗素子として機能する複数の拡散抵抗層６を
形成している。FIG. 2 is a top view showing a conventional pressure transducer element. As shown in the figure, the 3i single-crystal base plate 1 has a thin wall portion 2 serving as a strain diaphragm in the center, and the back surface of the thick wall portion 3 on the outer periphery of the 3i single-crystal base plate 1 has three J'' parts. 4 with an adhesive 5. On the upper layer of the thin portion 2 of the 3i single crystal substrate 1, a plurality of diffused resistance layers 6 which function as strain resistance elements are formed.
なお、７は拡散抵抗層６と電気的に接続される△１等の
金属配線層、８はＳ ｉ Ｏ２膜からなる保護膜、９は
金属配線層に接続された結線である。Note that 7 is a metal wiring layer such as Δ1 which is electrically connected to the diffused resistance layer 6, 8 is a protective film made of a SiO2 film, and 9 is a connection connected to the metal wiring layer.
このような圧力変換素子は以下のようにして、製造され
る。まず、厚さ３００〜４． Ｏ０４ｍの３ｉ単結晶基
板１の中央部を選択的に深く化学的エツチング処理する
ことで膜厚が４５１１ ｍ程度の肉薄部２を形成する。Such a pressure transducer element is manufactured as follows. First, the thickness is 300~4. By selectively and deeply chemically etching the central part of the O04m 3i single crystal substrate 1, a thin part 2 having a film thickness of about 4511 m is formed.
この時の化学エツチング処理としては、ＨＦ、ＨＮＯ３
等の強酸系あるい（五ＫＯＩ−４，Ｎａ ０ｆ−１等の
強アルカリ系薬品による工ッヂングが行われている。ぞ
して、肉薄部２上層部に拡散技術によりＳｉ単結晶基板
１と逆導電型の拡散抵抗層６を形成する。その後、既知
の方法で金属配線層７．保護膜８．結線９を形成する。At this time, chemical etching treatment includes HF, HNO3
Processing is performed using strong acid-based chemicals such as (5KOI-4, Na 0f-1, etc.).Then, the upper layer of the thin part 2 is processed with a Si single-crystal substrate 1 using a diffusion technique. A diffusion resistance layer 6 of opposite conductivity type is formed. Thereafter, a metal wiring layer 7, a protective film 8, and a connection 9 are formed by a known method.
次に、中央部に流体等の通気孔を有する台４上に３ｉ単
結晶基板１の肉厚部３を接着剤５により固るすることで
圧力変換素子が製造される。Next, the pressure transducer element is manufactured by hardening the thick portion 3 of the 3i single crystal substrate 1 with an adhesive 5 on a table 4 having a ventilation hole for fluid, etc. in the center.
このようにして製造された圧力変換素子では、ダイヤフ
ラム層である肉薄部２に気体、液体等の圧力Ｐが加わる
と、肉薄部２の歪みに応じて、拡散抵抗層６の抵抗値が
変化する。In the pressure conversion element manufactured in this way, when pressure P of gas, liquid, etc. is applied to the thin wall portion 2, which is the diaphragm layer, the resistance value of the diffusion resistance layer 6 changes depending on the strain of the thin wall portion 2. .
上記した抵抗値変化は、複数の拡散抵抗層６によりハー
フブリッジ、フルブリッジ等を結線９を介１ノで形成す
ることで、極めて微弱な抵抗値変化であっても検出可能
である。By forming a half bridge, a full bridge, etc. with a plurality of diffused resistance layers 6 through a connection 9, even an extremely weak change in resistance value can be detected.
一方、圧力変化による抵抗変化率（感度）が大きい稈、
その検出が容易であり感度を高めるにはダイヤフラムの
膜厚を薄くする必要がある。例えば直径２ｍｆｆ１で、
膜厚４５μｍまで薄クシた肉薄部２の拡散抵抗層６にお
いて、フル圧力１に９／ｃｍ３までの圧力を測定する場
合、１に’Ｊ／ｃｍ３で約２％の抵抗値変化となる。On the other hand, culms with a large resistance change rate (sensitivity) due to pressure changes,
To facilitate detection and increase sensitivity, it is necessary to reduce the thickness of the diaphragm. For example, with a diameter of 2mff1,
When measuring a pressure of up to 9/cm3 at full pressure in the diffused resistance layer 6 of the thin part 2 which has a film thickness of 45 μm, the resistance value changes by about 2% for 1 to 9 J/cm3.
しかしながら、このように肉薄部２の膜厚を簿くすると
膜厚の均一性は劣化するため、圧力変化に対する抵抗変
化の線形竹が悪化づるという問題点があった。このよう
な線形性の悪化は±１％程度であれば補償可能であるが
、それ以上の悪化は補償不能どなる。従って、線形竹を
麗持し、かつ感度を高めるには薄膜化した肉薄部２の膜
厚を均一に形成することが不可欠どなる。However, if the film thickness of the thin portion 2 is reduced in this manner, the uniformity of the film thickness deteriorates, and there is a problem that the linearity of resistance change with respect to pressure change worsens. Such a deterioration in linearity can be compensated for by about ±1%, but if it worsens beyond that, it cannot be compensated. Therefore, it is essential to form the thinned portion 2 with a uniform thickness in order to preserve the linear bamboo and increase its sensitivity.
しかしながら、３００〜４００μｍ程度の膜厚の比較的
厚いＳｉ単結晶基板１から、膜厚が４５μｍ程度の薄い
肉薄部２の膜厚を均一に形成Ｊることは機械研磨は勿論
、化学的エツヂング処即によっても、不可能であるとい
う問題点があった。However, it is difficult to uniformly form a thin part 2 with a thickness of about 45 μm from a relatively thick Si single crystal substrate 1 with a thickness of about 300 to 400 μm, not only by mechanical polishing but also by chemical etching. However, there was a problem in that it was impossible.
この発明は上記のような問題点を解決づるためになされ
たもので、高感度でかつ圧力変化に対Ｊる抵抗変化の線
形性を維持できるダイヤフラム層を有する圧力変換素子
の￥Ｊ造方法を得ることを目的とする。This invention was made in order to solve the above-mentioned problems, and provides a method for manufacturing a pressure transducer element having a diaphragm layer that is highly sensitive and capable of maintaining linearity of resistance change with respect to pressure change. The purpose is to obtain.
この発明にかかる圧力変換素子の製造方法は、基板表面
上の所定領域にパターン層を形成する工程と、前記パタ
ーン層を含む前記基板上に半導体層を形成する工程と、
前記パターン層上における前記半導体層上層部に拡散抵
抗層を形成する工程と、萌記基板史面より、選択的にエ
ツチングを行うことで、前記基板における前記パターン
層に対応した領域を除去し、前記パターン層裏面を露出
する工程と、前記パターン層を除去することで、前記パ
ターン層ｔの前記半導体層をダイヤフラム層として残す
工程とを合んでいる。A method for manufacturing a pressure conversion element according to the present invention includes the steps of: forming a pattern layer in a predetermined region on a substrate surface; forming a semiconductor layer on the substrate including the pattern layer;
forming a diffusion resistance layer in the upper layer of the semiconductor layer on the pattern layer; and selectively etching from the history of the Moeki substrate to remove a region corresponding to the pattern layer on the substrate; The step of exposing the back surface of the pattern layer and the step of removing the pattern layer to leave the semiconductor layer of the pattern layer t as a diaphragm layer are combined.
この発明においては、ダイヤフラム層の膜厚はパターン
層上に形成された半導体層の膜厚によって決定される。In this invention, the thickness of the diaphragm layer is determined by the thickness of the semiconductor layer formed on the pattern layer.
第１図（ａ）〜（ｆ）はそれぞれこの発明の一実施例で
ある圧力変換素子の製造方法を示す断面図である。FIGS. 1(a) to 1(f) are cross-sectional views showing a method of manufacturing a pressure transducer element according to an embodiment of the present invention.
まず、Ｓ１単結晶基板１十の所定領域に絶縁膜１１を同
図（ａ）に示すように均一な膜厚で形成する。この絶縁
膜１１は起歪ダイヤフラム層のパターン層として機能し
、酸化膜あるいは窒化膜等により形成される。First, an insulating film 11 is formed in a predetermined region of the S1 single crystal substrate 10 to have a uniform thickness as shown in FIG. This insulating film 11 functions as a pattern layer of the strain diaphragm layer, and is formed of an oxide film, a nitride film, or the like.
次に、絶縁膜１１を含む３ｉ単結晶基板１十にエピタキ
シャル成長により絶縁膜１１上の膜厚が均一なエピタキ
シャル層１２を同図（ｂ）に示すように形成する。Next, on the 3i single crystal substrate 10 including the insulating film 11, an epitaxial layer 12 having a uniform thickness is formed on the insulating film 11 by epitaxial growth, as shown in FIG. 3(b).
そして、従来と同様の方法で、絶縁膜１１上のエビクキ
シャル層１２上層部に同図（Ｃ）に示すように拡散抵抗
層６を形成し、拡散抵抗層６の設けられていないエピタ
キシトル層１２表面を保護膜８で覆う。Then, as shown in FIG. The surface is covered with a protective film 8.
そして、同図（ｄ）に示すように、抵抗拡散層６と電気
的接続される金属配線層７を既知の方法で形成する。Then, as shown in FIG. 4(d), a metal wiring layer 7 electrically connected to the resistance diffusion layer 6 is formed by a known method.
その後、Ｓｉ単結晶基板１衷而に写真製版技術により絶
縁膜１１に対応した領域に開口部を有するエツチングマ
スク層１３を同図（ｅ）に小すように形成する。Thereafter, an etching mask layer 13 having an opening in a region corresponding to the insulating film 11 is formed over the Si single crystal substrate by photolithography so as to be small as shown in FIG. 1(e).
そして、３ｉ甲結晶基板１裏面から、エツチングマスク
層１３をマスクとして化学エツチング法により、エツチ
ングマスク層１３の開口部下のＳｉ単結晶基板１を除去
し、絶縁膜１１の裏面を露出させる。このエツチングに
対し絶縁膜１１は１ツチング耐性が優れているため、絶
縁膜１１はエツチングされない。Then, by chemical etching using the etching mask layer 13 as a mask, the Si single crystal substrate 1 under the opening of the etching mask layer 13 is removed from the back surface of the 3i A crystal substrate 1 to expose the back surface of the insulating film 11. Since the insulating film 11 has excellent resistance to etching, the insulating film 11 is not etched.
次に、絶縁膜１１及びエツチングマスク層１３を除去す
ることで、中央にダイヤフラム層となる肉薄部２、その
周辺に肉厚部３を有する圧力変換素子が形成できる。Next, by removing the insulating film 11 and the etching mask layer 13, a pressure transducer element having a thin part 2 serving as a diaphragm layer at the center and a thick part 3 around the thin part 2 can be formed.
このようにして形成された肉薄部２の膜厚は絶縁膜１１
」ニに形成されたエピタキシャル層１２の膜厚により決
定される。エピタキシャル層１２の膜厚の再現性は良く
、絶縁膜１１上に均一な膜厚で形成でき、また、下地で
ある絶縁膜１１の膜厚ち均一に形成することができるた
め、肉薄部２の膜厚を薄く均一に形成することができる
。その結果、感度よく、圧力変化に伴う抵抗変化の線形
性が維持できる圧力変換素子を得ることができる。The thickness of the thin portion 2 formed in this way is the same as that of the insulating film 11.
It is determined by the thickness of the epitaxial layer 12 formed on the second side. The thickness of the epitaxial layer 12 has good reproducibility and can be formed on the insulating film 11 with a uniform thickness, and the thickness of the underlying insulating film 11 can be formed uniformly. It is possible to form a thin and uniform film. As a result, it is possible to obtain a pressure transducer element with good sensitivity and capable of maintaining linearity of resistance change accompanying pressure change.
なお、この実施例では、ダイヤフラム層のパターン層ど
して、酸化膜、窒化膜等の絶縁膜を形成したが、他の材
質であっても、Ｓｉ単結晶基板１に対するエツチングに
対しエツチング耐性が優れ、均一な膜厚で形成できる材
質であれば、代用可能である。In this example, an insulating film such as an oxide film or a nitride film is formed as the pattern layer of the diaphragm layer, but even if other materials are used, the etching resistance against the etching of the Si single crystal substrate 1 may be insufficient. Any material that is superior in quality and can be formed with a uniform thickness can be used instead.
また、この実施例では、絶縁膜１１を含むＳ単結晶基板
１上にエピタキシＸ・ル成長させることで、ダイヤフラ
ム層となるＪピタキシャル層１２を形成したが、任意の
基板上に絶縁膜１１′Ｓ−のパターン層を形成し、パタ
ーン層を含む基板−１−に単結晶半導体層が形成できれ
ば、この発明を適用づることができる。Further, in this embodiment, the J epitaxial layer 12, which becomes the diaphragm layer, was formed by epitaxially growing the S single crystal substrate 1 including the insulating film 11, but the insulating film 11' The present invention can be applied if an S- pattern layer is formed and a single crystal semiconductor layer can be formed on the substrate-1- including the pattern layer.
以上説明したように、この発明によれば、ダイヤフラム
層の膜厚はパターン層２トに形成された半導体層の膜ｆ
７により決定され、パターン層及びパターン層上の半導
体層の膜厚は均一に形成できるため、ダイヤフラム層の
膜厚は薄膜化しても均一に形成できる。As explained above, according to the present invention, the film thickness of the diaphragm layer is the thickness of the semiconductor layer formed on the pattern layer 2.
7, and the thickness of the pattern layer and the semiconductor layer on the pattern layer can be formed uniformly, so that the thickness of the diaphragm layer can be formed uniformly even if it is made thin.
その結果、感度よく、圧力変化による抵抗変化の線形性
が維持できる圧力変換素子が形成できる効果がある。As a result, it is possible to form a pressure transducer element with good sensitivity and which can maintain linearity of resistance change due to pressure change.
第１図（ａ）〜ｍはそれぞれこの発明の一実施例である
圧力変換素子の製造方法を示す断面図、第２図は従来の
圧力変換素子の断面図である。
図において、１はＳ１単結晶基板、２は肉薄部、６は拡
散抵抗層、１１は絶縁膜、１２はエピタキシャル層、１
３はエツチングマスク層である。
なお、各図中同一符号は同一または相当部分を示づ”。
第１図
代理人 大 岩 増 雄
第
図FIGS. 1(a) to 1(m) are sectional views showing a method of manufacturing a pressure transducing element according to an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional pressure transducing element. In the figure, 1 is an S1 single crystal substrate, 2 is a thin part, 6 is a diffused resistance layer, 11 is an insulating film, 12 is an epitaxial layer, 1
3 is an etching mask layer. In addition, the same reference numerals in each figure indicate the same or corresponding parts.'' Figure 1 Agent Masuo Oiwa Figure
Claims (1)
程と、 前記パターン層を含む前記基板上に半導体層を形成する
工程と、 前記パターン層上における前記半導体層上層部に拡散抵
抗層を形成する工程と、 前記基板裏面より、選択的にエッチングを行うことで、
前記基板における前記パターン層に対応した領域を除去
し、前記パターン層裏面を露出する工程と、 前記パターン層を除去することで、前記パターン層上の
前記半導体層をダイヤフラム層として残す工程とを含ん
だ圧力変換素子の製造方法。(1) forming a patterned layer in a predetermined region on the surface of the substrate; forming a semiconductor layer on the substrate including the patterned layer; and forming a diffused resistance layer on the upper layer of the semiconductor layer on the patterned layer. By performing the forming process and selectively etching from the back surface of the substrate,
a step of removing a region corresponding to the pattern layer on the substrate to expose the back surface of the pattern layer; and a step of removing the pattern layer to leave the semiconductor layer on the pattern layer as a diaphragm layer. A method for manufacturing a pressure conversion element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18401888A JPH0233974A (en) | 1988-07-22 | 1988-07-22 | Manufacture of pressure converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18401888A JPH0233974A (en) | 1988-07-22 | 1988-07-22 | Manufacture of pressure converter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0233974A true JPH0233974A (en) | 1990-02-05 |
Family
ID=16145901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18401888A Pending JPH0233974A (en) | 1988-07-22 | 1988-07-22 | Manufacture of pressure converter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0233974A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5455203A (en) * | 1992-02-20 | 1995-10-03 | Seiko Instruments Inc. | Method of adjusting the pressure detection value of semiconductor pressure switches |
| WO2001000523A1 (en) * | 1999-06-29 | 2001-01-04 | Regents Of The University Of Minnesota | Micro-electromechanical devices and methods of manufacture |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49124991A (en) * | 1973-02-12 | 1974-11-29 | ||
| JPS59172778A (en) * | 1983-03-22 | 1984-09-29 | Nec Corp | Manufacture of pressure sensor |
| JPS62283679A (en) * | 1986-06-02 | 1987-12-09 | Fujikura Ltd | Manufacture of semiconductor pressure sensor |
-
1988
- 1988-07-22 JP JP18401888A patent/JPH0233974A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49124991A (en) * | 1973-02-12 | 1974-11-29 | ||
| JPS59172778A (en) * | 1983-03-22 | 1984-09-29 | Nec Corp | Manufacture of pressure sensor |
| JPS62283679A (en) * | 1986-06-02 | 1987-12-09 | Fujikura Ltd | Manufacture of semiconductor pressure sensor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5455203A (en) * | 1992-02-20 | 1995-10-03 | Seiko Instruments Inc. | Method of adjusting the pressure detection value of semiconductor pressure switches |
| WO2001000523A1 (en) * | 1999-06-29 | 2001-01-04 | Regents Of The University Of Minnesota | Micro-electromechanical devices and methods of manufacture |
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