JPH0233823A - Electron emission element - Google Patents
Electron emission elementInfo
- Publication number
- JPH0233823A JPH0233823A JP63182303A JP18230388A JPH0233823A JP H0233823 A JPH0233823 A JP H0233823A JP 63182303 A JP63182303 A JP 63182303A JP 18230388 A JP18230388 A JP 18230388A JP H0233823 A JPH0233823 A JP H0233823A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electron
- electron emission
- work function
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000004020 conductor Substances 0.000 claims abstract description 17
- 239000012212 insulator Substances 0.000 claims abstract description 14
- 238000009413 insulation Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052593 corundum Inorganic materials 0.000 abstract description 3
- 239000011521 glass Substances 0.000 abstract description 3
- 239000007769 metal material Substances 0.000 abstract description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 3
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000007737 ion beam deposition Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Cold Cathode And The Manufacture (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、電子顕微鏡、電子ビーム露光装置、ＣＲＴ等
、各種電子ビーム応用装置の電子発生源として利用でき
る電子放出素子に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an electron-emitting device that can be used as an electron source for various electron beam application devices such as an electron microscope, an electron beam exposure device, and a CRT.
従来の技術
電子ビーム装置、例えば電子顕微鏡やＣＲＴ等における
電子発生源として、従来熱陰極からの熱電子放出が用い
られていた。しかし、この様な熱陰極を用いた電子放出
は加熱手段が必要であったり、加熱によるエネルギーロ
スがある等の問題があった。そこで、加熱によらない電
子放出素子の研究、いわゆる冷陰極に関する研究が行わ
れ、いくつかの型の電子放出素子が提案されてきた。BACKGROUND OF THE INVENTION Conventionally, thermionic emission from a hot cathode has been used as an electron source in electron beam devices such as electron microscopes and CRTs. However, electron emission using such a hot cathode has problems such as requiring a heating means and causing energy loss due to heating. Therefore, research has been conducted on electron-emitting devices that do not rely on heating, that is, so-called cold cathodes, and several types of electron-emitting devices have been proposed.
たとえば、ＰＮ接合に逆バイアス電圧を印加し、電子な
だれ降伏現象を起こさせて素子外へ電子を放出させるも
のや、電界集中の生じ易い形状の金属に対し電圧を印加
して局所的に高密度な電界を発生させ、金属から素子外
へ電子を放出させる電界効果型のものや、金属−絶縁体
層−金属層の構成で、この２つの金属の間に電圧を印加
することにより、トンネル効果で絶縁体層を通過してき
た電子を金属層から素子外へ放出させるＭＩＭ型のもの
等の電子放出素子が提案されてきた。For example, a reverse bias voltage is applied to a PN junction to cause an electron avalanche breakdown phenomenon and electrons are emitted outside the device, or a voltage is applied to a metal shape that tends to cause electric field concentration to locally increase the density. A field-effect type that generates an electric field to emit electrons from the metal to the outside of the element, or a metal-insulator layer-metal layer structure, which creates a tunnel effect by applying a voltage between the two metals. Electron-emitting devices such as MIM type devices have been proposed in which electrons that have passed through an insulator layer are emitted from a metal layer to the outside of the device.
上記冷陰極のうちＭＩＭ型電子電子放出素子して、第３
図を用いてもう少し詳しく説明する。Among the cold cathodes, the third one is an MIM type electron-emitting device.
This will be explained in more detail using figures.
ＭＩＭ型の電子放出素子は、第３図に示すように、金属
２１上に薄い絶縁体層２２を介して薄い金属２３が積層
形成された構造を有している。そして、電源２４によっ
て金属２３の仕事関数φより大きな電圧を金属２１およ
び金属２３に印加することによって、絶縁体層２２をト
ンネルした電子のうち真空準位より大きなエネルギーを
有するもが金属２３表面から放出電子２６として放出さ
れろ。そして、高い電子放出効率を得ろためには、絶縁
体層２２を絶縁破壊を生じない範囲で、また金属２３を
電流が十分流れる範囲で、各々できる限り薄く形成する
ことが望ましい。As shown in FIG. 3, the MIM type electron-emitting device has a structure in which a thin metal 23 is laminated on a metal 21 with a thin insulating layer 22 interposed therebetween. By applying a voltage greater than the work function φ of the metal 23 to the metal 21 and the metal 23 by the power source 24, electrons having energy greater than the vacuum level among the electrons tunneled through the insulating layer 22 are removed from the surface of the metal 23. be emitted as emitted electrons 26. In order to obtain high electron emission efficiency, it is desirable to form the insulating layer 22 as thin as possible within a range that does not cause dielectric breakdown, and within a range that allows sufficient current to flow through the metal 23.
このＭＩＭ型電子放出素子は、従来テレビシコン学会電
子装置研究委員会資料「トンネルカソードを用いた陰極
線管Ｊ（１９８８年４月３０日）で提示されている第４
図のような構成のものや、特開昭６２−２７２４２１号
公報に記載されている第６図のような構成のものがある
。即ち、第４図は、ガラスの基板３０上にＡｌの金属層
３１を形成し、その上に絶縁体層３２としてＡｌ２Ｏ３
，絶縁体層３３としてＳｉＯを形成し、さらにその上に
Ａｕの金属層３４を形成した構成であり、金属層３４と
金属層３１の間に電源３ｅによって図のように電圧を印
加することにより、金属層３４の電子放出部３５より電
子を放出させろものである。また、第５図は、導電性材
料４１の上に絶縁体層４３を形成し、その上に金属層４
４を設け、さらに電子放出部４５に対応した導電性材料
４１の絶縁体層４３との界面に微小突起部４２を設けた
構成であり、第４図の場合と同様、金属層４４と導電性
材料４１との間に電圧を印加すると、微小突起部４２に
強い電界が生じ、電子は微小突起部４２かも絶縁体層４
３をトンネルして金属層４４の電子放出部４５から放出
されるものである。This MIM type electron-emitting device has been previously proposed in the 4th article presented in the Electronic Device Research Committee of the Television Technology Society, “Cathode Ray Tube Using Tunnel Cathode J (April 30, 1988).
There is a structure as shown in the figure, and a structure as shown in FIG. 6 described in Japanese Patent Application Laid-Open No. 62-272421. That is, in FIG. 4, an Al metal layer 31 is formed on a glass substrate 30, and an Al2O3 insulator layer 32 is formed thereon.
, SiO is formed as the insulator layer 33, and a metal layer 34 of Au is further formed on it. , electrons are emitted from the electron emitting portion 35 of the metal layer 34. Further, in FIG. 5, an insulator layer 43 is formed on a conductive material 41, and a metal layer 4 is formed on it.
4 is provided, and a minute protrusion 42 is further provided at the interface between the conductive material 41 and the insulating layer 43 corresponding to the electron emitting part 45, and as in the case of FIG. When a voltage is applied between the material 41 and the microprotrusions 42, a strong electric field is generated in the microprotrusions 42, and electrons are transferred to the microprotrusions 42 and the insulator layer 4.
3 and is emitted from the electron emitting portion 45 of the metal layer 44.
発明が解決しようとする課題
しかし、従来提案されていたＭＩＭ型電子放出素子は、
トンネル電子を供給するための金属として使用できるも
のが安定性の面から限られ、その仕事関数も４〜６ｅＶ
程度となるため、ショットキー効果を起こさせ、金属面
から電子を通り抜けさせるために必要な印加電圧は、そ
の仕事関数の大きさに応じて高くする必要がある。その
ため、電子放出面に対応する金属表面に微小突起部を設
けて電界を集中するようにし、トンネル電子の供給量を
増やすようにしても、使用している金属の仕事関数が大
きいため、トンネル電子の供給量にも限界があり、それ
に応じた電子放出ｌにも限界があった。また、電子放出
に必要な印加電圧も高くなるという問題があった。Problems to be Solved by the Invention However, the MIM type electron-emitting devices that have been proposed in the past,
Metals that can be used to supply tunnel electrons are limited due to stability, and their work function is 4 to 6 eV.
Therefore, the applied voltage required to cause the Schottky effect and cause electrons to pass through the metal surface needs to be increased in accordance with the size of the work function. Therefore, even if we try to increase the supply of tunnel electrons by providing minute protrusions on the metal surface corresponding to the electron emitting surface to concentrate the electric field, the tunnel electrons There was a limit to the supply amount, and there was also a corresponding limit to the amount of electron emission. Further, there was a problem in that the applied voltage necessary for electron emission also increased.
また、表面金属の仕事関数も４〜６ｅＶ程度と高いため
、真空中への電子放出効率が低くなるという問題もあっ
た。Furthermore, since the work function of the surface metal is as high as about 4 to 6 eV, there is also the problem that the electron emission efficiency into vacuum is low.
課題を解決するための手段
上記課題を解決するための本発明の技術的手段は、第１
に、導電性材料と、上記導電性材料上の電子放出面に対
応する部分に低仕事関数材料層を設け、さらにこの低仕
事関数材料層を被覆して絶縁体層を設け、さらに、この
絶縁体層の上に金属材料層を設けた構成にするものであ
る。Means for Solving the Problems The technical means of the present invention for solving the above problems are as follows:
A conductive material and a low work function material layer are provided on a portion of the conductive material corresponding to the electron emitting surface, and an insulating layer is provided covering the low work function material layer, and further, an insulating layer is provided covering the low work function material layer. The structure is such that a metal material layer is provided on the body layer.
また、第２に、上記第１に示した構成に加えて、金属材
料層の電子放出面に対応した部分の上に低仕事関数材料
層を被覆した構成にするものである。Second, in addition to the configuration shown in the first aspect, a low work function material layer is coated on a portion of the metal material layer corresponding to the electron emitting surface.
作用
本発明は上記構成により、ＭＩＭ型電子放出素子におけ
るトンネル電子を供給する金属に対応する仕事関数の大
きさを、実質的に、新たに設けた低仕事関数材料層のそ
れに置き換え、より低い印加電圧によって、トンネル電
子の供給を可能とし、その結果電子放出素子としてより
多くの電子放出を可能とするものである。また、表面金
属層の上に低仕事関数材料層を形成することにより、電
子放出効率をさらに高めることを可能とするものである
。Effect: With the above configuration, the present invention substantially replaces the work function corresponding to the metal that supplies tunnel electrons in the MIM type electron-emitting device with that of the newly provided low work function material layer, thereby lowering the applied voltage. It is possible to supply tunneling electrons depending on the voltage, and as a result, it is possible to emit more electrons as an electron-emitting device. Further, by forming a low work function material layer on the surface metal layer, it is possible to further improve electron emission efficiency.
実施例
以下本発明の実施例について図面を用いて詳細に説明す
る。第１図は本発明の第１実施例における電子放出素子
の概略断面図であり、１は導電性材料、２は低仕事関数
材料層、３は絶縁体層、４は金属層、６は電子放出部、
６は基板を示す。まず本発明の構成について説明する。EXAMPLES Hereinafter, examples of the present invention will be described in detail with reference to the drawings. FIG. 1 is a schematic cross-sectional view of an electron-emitting device according to a first embodiment of the present invention, in which 1 is a conductive material, 2 is a low work function material layer, 3 is an insulator layer, 4 is a metal layer, and 6 is an electron-emitting device. emission part,
6 indicates a substrate. First, the configuration of the present invention will be explained.
本発明の電子放出素子はガラスからなる基板６の上に、
導電性材料１として真空蒸着によってＡｌ薄膜を３００
０〜４０ＱＯλ形成し、その後、φ１００μｍの電子放
出面６に対応した位置の導電性材料１上にφ１２０μｍ
の低仕事関数材料層２として、例えばＢａあるいはＹＢ
、等を１ｏ〜５０入程度形成した。その後、絶縁体層３
として、例えばＡｌ２Ｏ３あるいは５ｉ０２等を６Ｑ〜
２００人程度形成し、その」二に金属層４として、例え
ばＡｕあるいは“Ａｌをクラスターイオンビーム蒸着に
よって５０〜２００λ程度形成したものである。上述の
ように形成した電子放出素子の導電性材料１と金属層４
との間に、金属層４が正となるように電圧を印加したと
ころ、従来８〜１０Ｖ程度の印加で電子放出が見られた
ものが、６〜８ｖ程度から電子放出が見られるようにな
った。The electron-emitting device of the present invention is provided on a substrate 6 made of glass.
As the conductive material 1, an Al thin film with a thickness of 300 nm was deposited by vacuum evaporation.
0 to 40 QOλ is formed, and then a φ120 μm film is formed on the conductive material 1 at a position corresponding to the φ100 μm electron emission surface 6.
As the low work function material layer 2, for example, Ba or YB
, etc., about 1 to 50 pieces were formed. After that, insulator layer 3
For example, Al2O3 or 5i02 etc. from 6Q to
The second metal layer 4 is made of Au or Al with a thickness of about 50 to 200 λ by cluster ion beam evaporation.The conductive material 1 of the electron-emitting device formed as described above is and metal layer 4
When a voltage was applied between them so that the metal layer 4 became positive, electron emission was observed at about 6 to 8 V, whereas previously electron emission was observed at about 8 to 10 V. Ta.
次に、第２図を用いて本発明の第２の実施例について説
明する。第２図は本発明の第２実施例における電子放出
素子の概略断面図であり、１１は導電性材料、１２は低
仕事関数材料層、１３は絶縁体層、１４は金属層、１５
は電子放出面、１６は低仕事関数材料層を示す。本発明
の構成は、例えばＡｌ板のような導電性材料１１の上で
、電子放出面１５に対応した位置に低仕事関数材料層１
２を形成し、その上に低仕事関数材料層１２を被覆する
ようにして絶縁体層１３を形成し、さらにその上に、金
属層１４を形成した。その後、電子放出面１６に対応し
て、やや大きめに低仕事関数材料層１６を、例えばＢａ
あるいはＣｓを蒸着することによって形成し、本発明の
電子放出素子を作製した。これにより、印加電圧が更に
低減でき、かつ電子放出量の増加を図ることができた。Next, a second embodiment of the present invention will be described using FIG. FIG. 2 is a schematic cross-sectional view of an electron-emitting device according to a second embodiment of the present invention, in which 11 is a conductive material, 12 is a low work function material layer, 13 is an insulating layer, 14 is a metal layer, 15
16 indicates an electron emitting surface, and 16 indicates a low work function material layer. The structure of the present invention is such that a low work function material layer 1 is placed on a conductive material 11 such as an Al plate at a position corresponding to an electron emitting surface 15.
2 was formed, an insulator layer 13 was formed thereon to cover the low work function material layer 12, and a metal layer 14 was further formed thereon. Thereafter, a slightly larger layer of low work function material 16 is formed corresponding to the electron emitting surface 16, for example, with Ba.
Alternatively, the electron-emitting device of the present invention was fabricated by depositing Cs. This made it possible to further reduce the applied voltage and increase the amount of electron emission.
発明の効果
以上のように、本発明は印加電圧が低減でき、かつ従来
と同等の印加電圧においてより多くの電子放出量を得る
ことを可能とし、電子放出効率を大巾に向上した冷陰極
電子放出源を得ることができた。また、低い印加電圧で
電子放出が可能となるため、絶縁体層の絶縁破壊を防止
することができ、寿命を大巾に延ばすことができる。Effects of the Invention As described above, the present invention makes it possible to reduce the applied voltage and obtain a larger amount of electron emission at the same applied voltage as in the past, and to produce cold cathode electrons with greatly improved electron emission efficiency. We were able to find the source of the emission. Further, since electron emission is possible with a low applied voltage, dielectric breakdown of the insulating layer can be prevented, and the life span can be greatly extended.
第１図は本発明の第１実施例における電子放出素子の概
略断面図、第２図は本発明の第２実施例における電子放
出素子の概略断面図、第３図はＭ Ｉ Ｍ型電子放出素
子の一般的構成を示す模式図、第４図および第５図は従
来の電子放出素子の概略断面図である。
１、１１．４１・・導電性材料、２，１２．１６・・低
仕事関数材料層、３．１３，２２，３２，３３．４３・
・・絶縁体層、４．１４．３１．３４．４４・・・金属
層。
第１図
第２図
代理人の氏名 弁理士 粟 野 重 孝 はか１名第
図
ｚ５叔工電う
■■■
第
図
Ｘ基板
第
図
４１専電′旺材社FIG. 1 is a schematic cross-sectional view of an electron-emitting device according to a first embodiment of the present invention, FIG. 2 is a schematic cross-sectional view of an electron-emitting device according to a second embodiment of the present invention, and FIG. 3 is a schematic cross-sectional view of an electron-emitting device according to a second embodiment of the present invention. A schematic diagram showing the general structure of the device, and FIGS. 4 and 5 are schematic cross-sectional views of a conventional electron-emitting device. 1, 11.41... Conductive material, 2, 12.16... Low work function material layer, 3.13, 22, 32, 33.43...
...Insulator layer, 4.14.31.34.44...Metal layer. Fig. 1 Fig. 2 Name of agent Patent attorney Shigetaka Awano Haka1 person Fig.
Claims (1)
対応する部分に形成された低仕事関数材料層と、上記低
仕事関数材料層を被覆してなる絶縁体層と、さらに上記
絶縁体層の上に形成された金属層とから構成されている
ことを特徴とする電子放出素子。 ２）、請求項１記載の電子放出素子の金属層上の電子放
出面に対応する部分に、さらに低仕事関数材料層を被覆
してなることを特徴とする電子放出素子。[Claims] 1) A conductive material, a low work function material layer formed on a portion of the conductive material corresponding to the electron emitting surface, and an insulation formed by covering the low work function material layer. 1. An electron-emitting device comprising a body layer and a metal layer formed on the insulator layer. 2) An electron-emitting device characterized in that a portion of the metal layer of the electron-emitting device according to claim 1 corresponding to the electron-emitting surface is further coated with a layer of a low work function material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63182303A JPH0233823A (en) | 1988-07-21 | 1988-07-21 | Electron emission element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63182303A JPH0233823A (en) | 1988-07-21 | 1988-07-21 | Electron emission element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0233823A true JPH0233823A (en) | 1990-02-05 |
Family
ID=16115932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63182303A Pending JPH0233823A (en) | 1988-07-21 | 1988-07-21 | Electron emission element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0233823A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2690273A1 (en) * | 1992-01-07 | 1993-10-22 | Mitsubishi Electric Corp | Discharge cathode esp. for plasma display panel - has yttrium or lanthanide hexa:boride layer on aluminium@ layer |
-
1988
- 1988-07-21 JP JP63182303A patent/JPH0233823A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2690273A1 (en) * | 1992-01-07 | 1993-10-22 | Mitsubishi Electric Corp | Discharge cathode esp. for plasma display panel - has yttrium or lanthanide hexa:boride layer on aluminium@ layer |
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