JPH02307251A - Resin-sealed semiconductor device - Google Patents

Resin-sealed semiconductor device

Info

Publication number
JPH02307251A
JPH02307251A JP12916189A JP12916189A JPH02307251A JP H02307251 A JPH02307251 A JP H02307251A JP 12916189 A JP12916189 A JP 12916189A JP 12916189 A JP12916189 A JP 12916189A JP H02307251 A JPH02307251 A JP H02307251A
Authority
JP
Japan
Prior art keywords
semiconductor chip
resin
aperture
inner leads
resin unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12916189A
Other languages
Japanese (ja)
Inventor
Takashi Kinoshita
高志 木下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP12916189A priority Critical patent/JPH02307251A/en
Publication of JPH02307251A publication Critical patent/JPH02307251A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch

Abstract

PURPOSE:To obtain a semiconductor package having excellent heat radiation properties by a method wherein a resin unit which seals a semiconductor chip and inner leads and has an aperture reaching the one surface of the semiconductor chip, radiating fins which are fixed to the upper surface of the resin unit with highly heat-conducting adhesive filling the aperture, etc., are provided. CONSTITUTION:A semiconductor package is composed of inner leads 2, a semiconductor chip 3 which is electrically connected to the inner leads 2 with fine metal wires 4 and supported by the inner leads 2, a resin unit 1 which seals the semiconductor chip 3 and the inner leads 2 and has an aperture reaching the one surface of the semiconductor chip 3 and radiating fins 6 which are fixed to the upper surface of the resin unit with highly heat-conducting adhesive 5 filling the aperture. For instance, after the electrode pads of the semiconductor chip 3 are electrically connected to the inner leads 2 with the fine metal wires 4, the resin unit 1 is formed by transfer-molding with a die which is so designed as to provide the aperture on a part of the upper surface of the semiconductor chip 3 where circuits are not formed. Then the aperture is filled with the silicone system adhesive 5 having excellent heat-conducting properties and the metal radiating fins 6 are attached.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は樹脂封止型半導体装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a resin-sealed semiconductor device.

〔従来の技術〕[Conventional technology]

従来の樹脂封止型半導体装置は第３図に示す嘩、１は樹
脂体、２は樹脂体１の内部から外部へ導出する内ｉ１１
Ｊ−ド、３は半導体チップ、４は半導体チップ３の電極
部と内部リード２とを電気的に接続する金属細線で構成
される。A conventional resin-sealed semiconductor device is shown in FIG.
3 is a semiconductor chip, and 4 is a thin metal wire that electrically connects the electrode portion of the semiconductor chip 3 and the internal lead 2.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の樹脂封止型半導体装置はグイパッド部を
有しおらず、特に半導体チップ３の寸法が大型化した場
合に多（用いられている。つまり、グイパッド部を設け
ると樹脂体１からグイパッド部を除いた残りの余白部分
が少なくなってしまい、内部リード２を配置できなくな
ってしまう場合の対策として多く用いられている。とこ
ろが半導体チップ３の全体が樹脂体１に包まれる構造と
なっており、半導体チップ３の動作時に樹脂体１内に熱
がこもってしまい、著しく放熱成性が悪く、従って半導
体装置としての熱抵抗が著しく高くなってしまうという
欠点がある。The above-mentioned conventional resin-sealed semiconductor device does not have a Gui pad part, and is often used especially when the size of the semiconductor chip 3 increases.In other words, if the Gui pad part is provided, the Gui pad part This is often used as a countermeasure in cases where the remaining blank area excluding the inner lead 2 becomes small and it becomes impossible to arrange the internal leads 2.However, the structure in which the entire semiconductor chip 3 is wrapped in the resin body 1 is used. Therefore, heat is trapped in the resin body 1 when the semiconductor chip 3 is operated, resulting in extremely poor heat dissipation properties, resulting in a disadvantage that the thermal resistance of the semiconductor device becomes extremely high.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の樹脂封止型半導体装置は、内部リードと、前記
内部リードに金属細線で電気的に接続され且つ保持され
た半導体チップと、前記半導体チップの１面に達する開
口部を有して前記半導体チップ及び前記内部リードを封
止する（封脂体と、前記開口部に充填した高熱伝導性接
着剤を介して前記樹脂体の上面に固着した放熱フィンと
を有する。The resin-sealed semiconductor device of the present invention has an internal lead, a semiconductor chip electrically connected to and held by the internal lead by a thin metal wire, and an opening reaching one surface of the semiconductor chip. The semiconductor chip and the internal leads are sealed (a sealing body), and a radiation fin is fixed to the upper surface of the resin body via a highly thermally conductive adhesive filled in the opening.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第１図は本発明の第１の実施例の断面図である。FIG. 1 is a sectional view of a first embodiment of the invention.

第１図において２は樹脂体１の内部より外部に導出する
内部リード、４は半導体チンブ３の電極パッド部と内部
リード２とを電気的に接続する金属細線、６は金属製の
放熱フィンであり、半導体チップ３の非回路形成面上の
樹脂体１に設けた貫通孔に充填された熱伝導性が良好な
シリコーン樹脂系接着剤５により取付けられている。In FIG. 1, 2 is an internal lead led out from the inside of the resin body 1, 4 is a thin metal wire that electrically connects the electrode pad part of the semiconductor chip 3 and the internal lead 2, and 6 is a metal heat radiation fin. The semiconductor chip 3 is attached using a silicone resin adhesive 5 having good thermal conductivity, which is filled in a through hole provided in the resin body 1 on the non-circuit forming surface of the semiconductor chip 3.

この様な構造であれば、半導体チップ３が直接熱伝導性
が良好な接着剤５に接触しており且つこの接着剤５を介
して放熱フィン６が取付けられているため、半導体チッ
プ３の動作時であっても樹脂体１に熱がこもることがな
く、熱放散性が著しく侵れているという利点を有する。With this structure, the semiconductor chip 3 is in direct contact with the adhesive 5 having good thermal conductivity, and the radiation fins 6 are attached via this adhesive 5, so the operation of the semiconductor chip 3 is controlled. This has the advantage that heat does not accumulate in the resin body 1 even when the heat dissipates significantly.

実験データによれば、従来構造に比べ２０〜３０％の熱
抵抗の低減が実現される。According to experimental data, a reduction in thermal resistance of 20-30% compared to conventional structures is achieved.

また、一般的な製造方法としては、半導体チップ３の電
極バンド部と内部リード２とを金属細線４にて電気的に
接続した後、半導体チップ３の非回路形成面の上面に貫
通孔が設けられる様に設計された金型を用いてトランス
ファーモールドを行ない、樹脂体１を形成し、さらにそ
の後熱伝導性に優れたシリコーン系接着剤５を貫通孔に
流入し、金属性放熱フィン６を取付けるという方法が採
られる。Further, as a general manufacturing method, after the electrode band portion of the semiconductor chip 3 and the internal leads 2 are electrically connected with the thin metal wire 4, a through hole is formed on the upper surface of the non-circuit forming surface of the semiconductor chip 3. Transfer molding is performed using a mold designed to allow the resin body 1 to be formed, and then a silicone adhesive 5 with excellent thermal conductivity is flowed into the through holes to attach the metal heat dissipating fins 6. This method is adopted.

尚、本実施例は金属細線４による電気的接続を例にとっ
たが、その他フリップチップ等の金属細線以外の接続方
法も当然採ることができる。Although this embodiment takes as an example the electrical connection using the thin metal wire 4, other connection methods other than the thin metal wire, such as flip-chip, can of course be used.

第２図は本発明の第２の実施例の断面図である。FIG. 2 is a sectional view of a second embodiment of the invention.

図において、７は半導体チップ３の回路形成面上にコー
ティングして設けられた通常５〜１５μｍ厚のポリイミ
ド系樹脂層であり、この１針脂層７の上面に設けた樹脂
体の貫通孔に充填されたシリコーン系接着剤５を介して
金属放熱フィン６が取付けられている。In the figure, 7 is a polyimide resin layer with a thickness of usually 5 to 15 μm provided by coating on the circuit forming surface of the semiconductor chip 3. Metal heat radiation fins 6 are attached via filled silicone adhesive 5.

この実施例では放熱フィン６が半導体チップ３の回路形
成面上に取付けられているため、熱放散性にはさらに侵
れるという利点がある。実験データでは実施例１に比べ
さらに１０％〜１５％の熱抵抗の低減が実現できた。In this embodiment, since the heat dissipation fins 6 are attached on the circuit forming surface of the semiconductor chip 3, there is an advantage that the heat dissipation performance is further improved. According to experimental data, a further reduction in thermal resistance of 10% to 15% compared to Example 1 was achieved.

〔発明の効果〕〔Effect of the invention〕

以上説明したように、本発明は半導体チップの回路形成
面または非回路形成面の上面に設けた樹脂体の貫通孔に
充填された熱伝導性が良好な接着剤を介して放熱フィン
が取付けられており、熱放散性に優れた半導体装置を提
供できるという効果がある。As explained above, the present invention has a heat dissipation fin attached to the through hole of the resin body provided on the upper surface of the circuit formation surface or non-circuit formation surface of the semiconductor chip through an adhesive having good thermal conductivity. This has the effect of providing a semiconductor device with excellent heat dissipation properties.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の第１の実施例の断面図、第２図は本発
明の第２の実施例の断面図、第３図は従来のｉ鼓脂封止
型半導体装置の断面図である。 １・・・・・・樹脂体、２・・・・・・内部リード、３
・・・・・・半導体チップ、４・・・・・・金属細線、
５・・・・・・接着剤、６・・・・・・放熱フィン、７
・・・・・・ポリイミド木系樹脂層。 代理人　弁理士　　内　原　　　晋 箋　２　図 第　３　図FIG. 1 is a sectional view of a first embodiment of the present invention, FIG. 2 is a sectional view of a second embodiment of the present invention, and FIG. 3 is a sectional view of a conventional i-sealed semiconductor device. be. 1... Resin body, 2... Internal lead, 3
...semiconductor chip, 4... thin metal wire,
5...Adhesive, 6...Radiation fin, 7
・・・・・・Polyimide wood resin layer. Agent Patent Attorney Shinji Uchihara 2 Figure 3

Claims (1)

【特許請求の範囲】[Claims] 内部リードと、前記内部リードに金属細線で電気的に接
続され且つ保持された半導体チップと、前記半導体チッ
プの１面に達する開口部を有して前記半導体チップ及び
前記内部リードを封止する樹脂体と、前記開口部に充填
した高熱伝導性接着剤を介して前記樹脂体の上面に固着
した放熱フィンとを有することを特徴とする樹脂封止型
半導体装置。an internal lead, a semiconductor chip that is electrically connected to and held by the internal lead with a thin metal wire, and a resin that has an opening that reaches one surface of the semiconductor chip and seals the semiconductor chip and the internal lead. 1. A resin-sealed semiconductor device comprising: a body; and a heat dissipating fin fixed to the upper surface of the resin body via a highly thermally conductive adhesive filled in the opening.
JP12916189A 1989-05-22 1989-05-22 Resin-sealed semiconductor device Pending JPH02307251A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12916189A JPH02307251A (en) 1989-05-22 1989-05-22 Resin-sealed semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12916189A JPH02307251A (en) 1989-05-22 1989-05-22 Resin-sealed semiconductor device

Publications (1)

Publication Number Publication Date
JPH02307251A true JPH02307251A (en) 1990-12-20

Family

ID=15002654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12916189A Pending JPH02307251A (en) 1989-05-22 1989-05-22 Resin-sealed semiconductor device

Country Status (1)

Country Link
JP (1) JPH02307251A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0582705A1 (en) * 1992-03-02 1994-02-16 Motorola, Inc. Molded ring integrated circuit package
EP0712158A2 (en) 1994-11-11 1996-05-15 Seiko Epson Corporation Resin sealing type semiconductor device with cooling member and method of making the same
US5594282A (en) * 1993-12-16 1997-01-14 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5633529A (en) * 1994-07-13 1997-05-27 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5652461A (en) * 1992-06-03 1997-07-29 Seiko Epson Corporation Semiconductor device with a convex heat sink
US5686361A (en) * 1992-06-03 1997-11-11 Seiko Epson Corporation Method for manufacturing a semiconductor device having a heat radiator
US5777380A (en) * 1995-03-17 1998-07-07 Seiko Epson Corporation Resin sealing type semiconductor device having thin portions formed on the leads
US5801435A (en) * 1995-02-27 1998-09-01 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
CN104681512A (en) * 2014-12-30 2015-06-03 华天科技（西安）有限公司 Flip chip-packaging heat dissipation structure and preparation method thereof
WO2022230243A1 (en) * 2021-04-28 2022-11-03 ソニーセミコンダクタソリューションズ株式会社 Semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100447A (en) * 1981-12-11 1983-06-15 Hitachi Ltd Resin sealing type semiconductor device and manufacture thereof
JPS6149446A (en) * 1984-08-17 1986-03-11 Matsushita Electronics Corp Resin seal type semiconductor device
JPS61137349A (en) * 1984-12-10 1986-06-25 Toshiba Corp Semiconductor device
JPH02739B2 (en) * 1980-09-30 1990-01-09 Fujitsu Ltd
JPH02129951A (en) * 1988-11-09 1990-05-18 Hitachi Ltd Semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02739B2 (en) * 1980-09-30 1990-01-09 Fujitsu Ltd
JPS58100447A (en) * 1981-12-11 1983-06-15 Hitachi Ltd Resin sealing type semiconductor device and manufacture thereof
JPS6149446A (en) * 1984-08-17 1986-03-11 Matsushita Electronics Corp Resin seal type semiconductor device
JPS61137349A (en) * 1984-12-10 1986-06-25 Toshiba Corp Semiconductor device
JPH02129951A (en) * 1988-11-09 1990-05-18 Hitachi Ltd Semiconductor device

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0582705A4 (en) * 1992-03-02 1995-02-22 Motorola Inc Molded ring integrated circuit package.
EP0582705A1 (en) * 1992-03-02 1994-02-16 Motorola, Inc. Molded ring integrated circuit package
US5652461A (en) * 1992-06-03 1997-07-29 Seiko Epson Corporation Semiconductor device with a convex heat sink
US5686361A (en) * 1992-06-03 1997-11-11 Seiko Epson Corporation Method for manufacturing a semiconductor device having a heat radiator
US5653891A (en) * 1992-06-03 1997-08-05 Seiko Epson Corporation Method of producing a semiconductor device with a heat sink
US5594282A (en) * 1993-12-16 1997-01-14 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5891759A (en) * 1993-12-16 1999-04-06 Seiko Epson Corporation Method of making a multiple heat sink resin sealing type semiconductor device
US5633529A (en) * 1994-07-13 1997-05-27 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
EP0712158A2 (en) 1994-11-11 1996-05-15 Seiko Epson Corporation Resin sealing type semiconductor device with cooling member and method of making the same
US5719442A (en) * 1994-11-11 1998-02-17 Seiko Epson Corporation Resin sealing type semiconductor device
US5801435A (en) * 1995-02-27 1998-09-01 Seiko Epson Corporation Resin sealing type semiconductor device and method of making the same
US5777380A (en) * 1995-03-17 1998-07-07 Seiko Epson Corporation Resin sealing type semiconductor device having thin portions formed on the leads
CN104681512A (en) * 2014-12-30 2015-06-03 华天科技（西安）有限公司 Flip chip-packaging heat dissipation structure and preparation method thereof
WO2022230243A1 (en) * 2021-04-28 2022-11-03 ソニーセミコンダクタソリューションズ株式会社 Semiconductor device

Similar Documents

Publication Publication Date Title
US6559525B2 (en) Semiconductor package having heat sink at the outer surface
US6853070B2 (en) Die-down ball grid array package with die-attached heat spreader and method for making the same
US6528882B2 (en) Thermal enhanced ball grid array package
US6429513B1 (en) Active heat sink for cooling a semiconductor chip
JP2744685B2 (en) Semiconductor device
JPH02114658A (en) Semiconductor device
JP2007184501A (en) Resin-sealed semiconductor device with externally exposed radiators at its top, and method for fabrication thereof
JPH0777258B2 (en) Semiconductor device
JPH02307251A (en) Resin-sealed semiconductor device
US20010040300A1 (en) Semiconductor package with heat dissipation opening
TW201916279A (en) Chip package
JPH03174749A (en) Semiconductor device
JPH03266456A (en) Semiconductor chip heat dissipating member and semiconductor package
US7038305B1 (en) Package for integrated circuit die
US20050110137A1 (en) Plastic dual-in-line packaging (PDIP) having enhanced heat dissipation
JPH06104355A (en) Cooling liquid enclosing type semiconductor device
JP2765242B2 (en) Integrated circuit device
KR20050051806A (en) Semiconductor package improved in heat sink property and method for manufacturing thereof
JP2002064174A (en) Semiconductor device and its manufacturing method
KR20050011208A (en) Semiconductor chip package having heat sink and manufacturing method thereof
JPS61150250A (en) Semiconductor device
TWI228301B (en) Package
JPH0722547A (en) Semiconductor device
JP2002134560A (en) Semiconductor device
JPH10321782A (en) Resin-molded type semiconductor device