JPH02282477A - Method and device for vacuum deposition - Google Patents
Method and device for vacuum depositionInfo
- Publication number
- JPH02282477A JPH02282477A JP10316889A JP10316889A JPH02282477A JP H02282477 A JPH02282477 A JP H02282477A JP 10316889 A JP10316889 A JP 10316889A JP 10316889 A JP10316889 A JP 10316889A JP H02282477 A JPH02282477 A JP H02282477A
- Authority
- JP
- Japan
- Prior art keywords
- cylindrical body
- vapor deposition
- resistance heating
- heating wire
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001771 vacuum deposition Methods 0.000 title claims description 12
- 238000000034 method Methods 0.000 title claims description 11
- 239000000463 material Substances 0.000 claims abstract description 58
- 238000001704 evaporation Methods 0.000 claims abstract description 34
- 238000007740 vapor deposition Methods 0.000 claims abstract description 33
- 230000008020 evaporation Effects 0.000 claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 30
- 239000010409 thin film Substances 0.000 claims abstract description 30
- 239000000126 substance Substances 0.000 claims abstract description 27
- 238000007738 vacuum evaporation Methods 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 10
- 238000004804 winding Methods 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 5
- 239000010931 gold Substances 0.000 abstract description 4
- 229910052721 tungsten Inorganic materials 0.000 abstract description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052737 gold Inorganic materials 0.000 abstract description 3
- 229910052697 platinum Inorganic materials 0.000 abstract description 3
- 229910052709 silver Inorganic materials 0.000 abstract description 3
- 239000004332 silver Substances 0.000 abstract description 3
- 229910052750 molybdenum Inorganic materials 0.000 abstract description 2
- 229910052715 tantalum Inorganic materials 0.000 abstract description 2
- 239000011521 glass Substances 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000011824 nuclear material Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 241001517013 Calidris pugnax Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は真空蒸着方法およびその装置に関し、特に、筒
状体の内周面に効率的に蕉発￥！ＩＪ質を蒸着して薄膜
を形成できる真空蒸着方法およびその装置に関するもの
である。[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to a vacuum deposition method and an apparatus thereof, and in particular, to a vacuum deposition method and an apparatus for the vacuum deposition method, and in particular to a method for efficiently depositing vapor on the inner circumferential surface of a cylindrical body. The present invention relates to a vacuum evaporation method and apparatus capable of forming a thin film by evaporating IJ quality.
〔従、来技術および解決しようとする課題〕従来、真空
蒸着における蒸発源は、第５図（ａｌ（ｂ） （Ｃ）に
示すようなものが知られている。[Conventional Art, Prior Art and Problems to be Solved] Conventionally, as an evaporation source for vacuum evaporation, one shown in FIG. 5 (al(b)(C)) is known.
すなわち、第５図（ａ）に示すものは、プラチナ（Ｐｔ
）などの線状の蒸発物質２２をタングステン（Ｗ）など
の高融点金属からなる抵抗加熱線ヒータ２１に接触させ
るとともに、その抵抗加熱線ヒータ２１に通電し、前記
蒸発物質２２を加熱して蒸発させるフィラメント方式で
ある。That is, what is shown in FIG. 5(a) is platinum (Pt
) is brought into contact with a resistance heating wire heater 21 made of a high melting point metal such as tungsten (W), and electricity is applied to the resistance heating wire heater 21 to heat the evaporation material 22 and evaporate it. It is a filament method.
第５図（ｂ）に示すものは、Ｗなどの高融点金属からな
る抵抗加熱材料からなるボート３１内にｐｔなどの粒子
状の蒸発物質３２を入れて、前記ボート３１に通電し、
前記原発物質３２を加熱して原発させるボート方式であ
る。In the system shown in FIG. 5(b), a particulate evaporated substance 32 such as PT is placed in a boat 31 made of a resistance heating material made of a high melting point metal such as W, and the boat 31 is energized.
This is a boat method in which the nuclear material 32 is heated to generate nuclear power.
第５図（Ｃ）に示すものは、高融点材料からなるるつぼ
４１内にＰｔなどの粒子状の蒸発物質４２を入れて、こ
のるつぼ４１内の蒸発物質４２にイオンビーム４３を当
て戻発物質４２を加熱して蒸発させる電子ビーム方式で
ある。In the system shown in FIG. 5(C), a particulate evaporated substance 42 such as Pt is placed in a crucible 41 made of a high-melting point material, and an ion beam 43 is applied to the evaporated substance 42 in the crucible 41 to return the returned material. This is an electron beam method that heats and vaporizes 42.
しかしながら、これらの蒸発源は、平板状の被蒸着体で
ある基板に対向して位置させて成膜する場合には、その
基板上に前記蒸発物質２２．３２．４２の薄膜を効率的
に形成することができるが、蒸着面が前記蒸発源に対向
していない、たとえば立体的な基体の側面、裏面又は円
筒体の内周面などの場合にあっては、前記蒸発源から蒸
発する蒸発物質２２．３２．４２が到達しにくり、薄膜
形成が困難となり、特に、被蒸着体として口径の小さな
筒状体の内周面に薄膜を形成することは不可能であると
いう問題点を有していた。However, when these evaporation sources are positioned opposite to a flat plate-shaped substrate to form a film, it is difficult to efficiently form a thin film of the evaporation substance 22, 32, 42 on the substrate. However, in cases where the evaporation surface does not face the evaporation source, such as the side surface of a three-dimensional substrate, the back surface, or the inner peripheral surface of a cylindrical body, the evaporation material that evaporates from the evaporation source 22.32.42 is difficult to reach, making it difficult to form a thin film, and in particular, it is impossible to form a thin film on the inner peripheral surface of a cylindrical body with a small diameter as the object to be deposited. was.
本発明は上記のような従来のもののもつ問題点を解決し
たものであって、筒状体の内周面に効率的に薄膜を形成
できる真空蒸着方法およびその装置を提供することを目
的としている。The present invention solves the problems of the conventional methods as described above, and aims to provide a vacuum evaporation method and apparatus that can efficiently form a thin film on the inner peripheral surface of a cylindrical body. .
〔課題を解決するための手段］
上記の目的を達成するために本発明の真空蒸着方法方法
は、真空槽内に配設した被蒸着体に薄膜を形成する真空
蒸着方法であって、長尺状の抵抗加熱線ヒータの外周に
原発物質を被覆して形、成され、かつ、一端が送りロー
ラに、また他端が巻取りローラにそれぞれ巻回された蒸
着用材料を、被蒸着体である筒状体内に挿通して配設し
、前記筒状体の両端部の近傍に配設した蒸着用材料を移
動可能に支持する電極を介して前記抵抗加熱線ヒータに
通電し、前記抵抗加熱線ヒータを被覆した蒸発物質を加
熱・蒸発させ、前記筒状体の内周面に蒸発物質の薄膜を
形成する手段を有しており、前記筒状体をその軸心を中
心に回転しながら薄膜を形成してもよく、また、本発明
の真空蒸着装置は、真空槽内に、非蒸着体である筒状体
と、この筒状体内に挿通されるとともに、長尺状の抵抗
加熱線ヒータの外周に蒸発物質を被覆して形成され、か
つ、一端が送りローラに、また他端が巻取りローラにそ
れぞれ巻回された蒸着用材料と、前記筒状体の両端部の
近傍に設けられ、前記蒸着用材料を移動可能に支持する
電極とを配設し、前記電極間に電圧を印加し、前記抵抗
加熱線ヒータを被覆した茎発物質を蒸発し、前記筒状体
の内周面に蒸着させる手段を有しており、前記筒状体を
その軸心を中心に回転させる回転部材を具えたものでも
よく、また、前記蒸着用材料は、前記電極で支持される
部分が、さらに、筒状体の内径より小径の他の電極で支
持されることで折り返され、蒸着用材料の折り返された
電極間の部分が筒状体の内部に位置しているようにして
もよい。[Means for Solving the Problems] In order to achieve the above object, the vacuum evaporation method of the present invention is a vacuum evaporation method for forming a thin film on an object to be evaporated disposed in a vacuum chamber. The material for vapor deposition is formed by coating the outer periphery of a resistance heating wire heater with a nuclear material, and is wound around a feed roller at one end and a take-up roller at the other end. Electricity is supplied to the resistance heating wire heater through an electrode that is inserted into a certain cylindrical body and movably supports the vapor deposition material disposed near both ends of the cylindrical body, and the resistance heating is performed by energizing the resistance heating wire heater. It has a means for heating and evaporating the evaporation material coated with the wire heater to form a thin film of the evaporation material on the inner circumferential surface of the cylindrical body, while rotating the cylindrical body around its axis. A thin film may be formed, and the vacuum evaporation apparatus of the present invention includes a cylindrical body that is a non-evaporated body in a vacuum chamber, and a long resistance heating wire that is inserted into the cylindrical body. A vapor deposition material formed by coating the outer periphery of the heater with an evaporation substance and wound around a feed roller at one end and a take-up roller at the other end, and a vapor deposition material provided near both ends of the cylindrical body. and an electrode that movably supports the material for vapor deposition, and a voltage is applied between the electrodes to evaporate the stem material covering the resistance heating wire heater, and to heat the inner periphery of the cylindrical body. The material for vapor deposition may have a means for vapor deposition on a surface, and may include a rotating member for rotating the cylindrical body around its axis, and the vapor deposition material may have a portion supported by the electrode, Furthermore, it may be folded back by being supported by another electrode having a smaller diameter than the inner diameter of the cylindrical body, so that the portion of the deposition material between the folded electrodes is located inside the cylindrical body.
本発明は上記の手段を採用したことにより、被蕉着体で
ある筒状体内に配設した長尺状の蒸着用材料に、前記筒
状体の両端の近傍に配設した電極を介して通電し、抵抗
加熱線ヒータの外周に被覆した蒸発物質を加熱して蒸発
させ、前記筒状体の内周面に蒸発物質を蒸着して薄膜を
形成できるとともに、前記蒸着用材料の一端に接続した
送りローラまたは他端に接続した巻取りローラにより筒
状体内に連続的に蒸着用材料を供給でき、薄膜をを連続
的に形成できることとなる。By employing the above-mentioned means, the present invention has a long vapor deposition material disposed in a cylindrical body which is an object to be evaporated, through electrodes disposed near both ends of the cylindrical body. Electricity is supplied to heat and evaporate the evaporation substance coated on the outer periphery of the resistance heating wire heater, and the evaporation substance can be evaporated on the inner peripheral surface of the cylindrical body to form a thin film, and connected to one end of the evaporation material. The material for deposition can be continuously supplied into the cylindrical body by the feeding roller or the take-up roller connected to the other end, and a thin film can be continuously formed.
〔発・明の具体的構成］ 以下、本発明を具体的に説明する。[Specific structure of the invention] The present invention will be explained in detail below.
第１図には本発明に用いられる蒸発源とその蒸発源によ
り加熱されて蒸発する蒸発物質とを一体にした蒸着用材
料の一実施例が示されていて、この蒸着用材料１は、タ
ングステン（Ｗ）、タンタル（Ｔａ）、モリブデン（Ｍ
ｏ）、ニオブ（Ｎｂ）などの高融点金属をワイヤ状にし
た抵抗加熱線ヒータ２の外周に、プラチナ（Ｐｔ）、金
（Ａｕ）、銀（Ａｇ）、パラジウム（Ｐｄ）、＆ｌ１１
（Ｃｕ）などの前記抵抗加熱線ヒータ２の高融点金属材
料より低融点の金属材料からなる蒸発物質３を被覆して
、同軸状に形成したものである。FIG. 1 shows an example of a vapor deposition material in which an evaporation source used in the present invention and an evaporation substance that is heated and evaporated by the evaporation source are integrated, and this vapor deposition material 1 is made of tungsten. (W), tantalum (Ta), molybdenum (M
o) Platinum (Pt), gold (Au), silver (Ag), palladium (Pd), &l11
It is coated with an evaporated substance 3 made of a metal material having a lower melting point than the high melting point metal material of the resistance heating wire heater 2, such as (Cu), and is formed coaxially.
第２図（ａ） （ｂ）には本発明による真空蒸着装置の
第１の実施例の要部が示されていて、上記の蒸着用材料
１が、その一端が送りローラフに接続され、他端が巻取
りローラ８に接続されるとともに、被蒸着体である円筒
状の筒状体４内に挿通されている。FIGS. 2(a) and 2(b) show the main parts of a first embodiment of the vacuum evaporation apparatus according to the present invention, in which the above-mentioned evaporation material 1 is connected at one end to a feed roller ruff and at the other end. The end thereof is connected to the take-up roller 8, and is inserted into the cylindrical body 4 which is the object to be deposited.
また、前記筒状体４の両端部の近傍には、前記長尺状の
蒸着用材料１を移動可能に支持する電極である回転ロー
ラ５．６が配設され、この一対の回転ローラ５．６間に
電圧を印加する電源９が接続されている。Further, near both ends of the cylindrical body 4, rotating rollers 5.6, which are electrodes that movably support the elongated vapor deposition material 1, are arranged. A power supply 9 is connected to apply a voltage between the terminals 6 and 6.
さらに、前記筒状体４には、その外周に筒状体４をその
軸心を中心とする回転を与える回転部材である一対の駆
動ローラ１０．１０が設けられている。Further, the cylindrical body 4 is provided with a pair of drive rollers 10.10 on its outer periphery, which are rotating members that rotate the cylindrical body 4 about its axis.
そして、上記の各部材が真空槽Ａ内に配設されて構成さ
れた真空蒸着装置は、真空槽Ａ内を所定の真空条件下に
保持された状態で使用される。The vacuum evaporation apparatus configured by disposing the above-mentioned members in the vacuum chamber A is used while the inside of the vacuum chamber A is maintained under a predetermined vacuum condition.
すなわち、本発明による真空蒸着装置を第２図（ａ）の
ようにセットした後、前記筒状体４を、第２図［有］）
に示すようにその軸心を中心に回転させながら、前記電
極である一対の回転ローラ５．６間に電源９から電圧を
印加し、前記筒状体４内に挿通される蒸着用材料ｌの抵
抗加熱線ヒータ２に電流を流して加熱し、抵抗加熱線ヒ
ータ２を、被覆する蒸発物質３を蒸発させ、筒状体４の
内周面に蒸発物質３の均一な薄膜を形成することができ
る。That is, after setting the vacuum evaporation apparatus according to the present invention as shown in FIG. 2(a), the cylindrical body 4 is set as shown in FIG.
As shown in the figure, a voltage is applied from a power source 9 between the pair of rotating rollers 5 and 6, which are the electrodes, while rotating the roller around its axis, and the vapor deposition material l inserted into the cylindrical body 4 is heated. A current is applied to the resistance heating wire heater 2 to heat it, evaporate the evaporation substance 3 covering the resistance heating wire heater 2, and form a uniform thin film of the evaporation substance 3 on the inner peripheral surface of the cylindrical body 4. can.
そして、前記抵抗加熱線ヒータ２の外周に被覆した蒸発
物質３が全部蒸発してしまったら、前記巻取りローラ８
により前記蒸着用材料１を所定量巻取ることにより、前
記筒状体４内に新たに原発物質３を有する蒸着用材料１
を連続的に供給し、さらに上記の操作を繰り返し、所望
の厚さの薄膜を形成できることとなる。When the evaporative substance 3 coated on the outer periphery of the resistance heating wire heater 2 has completely evaporated, the winding roller 8
By winding up a predetermined amount of the vapor deposition material 1 with
By continuously supplying and repeating the above operation, a thin film with a desired thickness can be formed.
また、前記蒸着用材料１の供給は、真空槽内の真空を破
ることなくでき、さらに、電極である回転ローラ５．６
に通電しながら、薄膜の形成を止めることなくできるこ
ととなる。Further, the deposition material 1 can be supplied without breaking the vacuum in the vacuum chamber, and further, the rotating rollers 5 and 6 serving as electrodes can be
This means that the thin film can be formed without stopping while energizing.
したがって、本発明においては、筒状体４の内周面に蒸
発材料３を蒸着して薄膜を確実に形成できるとともに、
筒状体４内に連続的に蒸発材料３を供給できるので、薄
膜形成効率を大幅に向上できることとなる。Therefore, in the present invention, the evaporation material 3 can be deposited on the inner peripheral surface of the cylindrical body 4 to reliably form a thin film, and
Since the evaporation material 3 can be continuously supplied into the cylindrical body 4, the thin film forming efficiency can be greatly improved.
第３図には本発明による真空蒸着装置の他の実施例の要
部が示されていて、前記と同様な蒸着用材料１が、その
一端が送りローラ１７に接続され、他端が巻取りローラ
１８に接続されるとともに、被蒸着体である円筒状の筒
状体１４内に往復挿通されている。FIG. 3 shows the main parts of another embodiment of the vacuum evaporation apparatus according to the present invention, in which the same evaporation material 1 as described above is connected to a feed roller 17 at one end and wound up at the other end. It is connected to a roller 18 and is inserted reciprocatingly into a cylindrical body 14 which is an object to be deposited.
すなわち、前記筒状体１４の一端側の端部近傍には、前
記茎着用材料１を移動可能に支持する電極である回転ロ
ーラ１５．１５′が配設され、また筒状体Ｘ４の他端側
の端部近傍には、前記筒状体１４の内径より小径の電極
である回転ローラ１６が配設され、被蒸着体である筒状
体１４がこの回転ローラ１６側から簡単に脱着できるよ
うになっているとともに、送りローラ１７から出た前記
蒸着用材料１は、筒状体１４内を前記一端側の回転ロー
ラ１５から他端側の回転ローラ１６に行き、ここで折り
返されて一端側の回転ローラ１５′に到り、巻取りロー
ラ１８に接続されており、前記筒状体１４内に往復配設
されている。That is, near one end of the cylindrical body 14, a rotary roller 15, 15', which is an electrode that movably supports the stem material 1, is disposed, and the other end of the cylindrical body X4 is disposed. A rotating roller 16, which is an electrode having a diameter smaller than the inner diameter of the cylindrical body 14, is disposed near the end of the side so that the cylindrical body 14, which is the object to be deposited, can be easily attached and detached from the side of the rotating roller 16. At the same time, the vapor deposition material 1 coming out from the feed roller 17 passes through the cylindrical body 14 from the rotating roller 15 on the one end side to the rotating roller 16 on the other end side, where it is folded back and transferred to the one end side. The rotating roller 15' is connected to the take-up roller 18 and reciprocated within the cylindrical body 14.
また、前記回転ローラ１５．１６問および回転比−ラ１
６．１５′間にはそれぞれ電源１９．１９が接続されて
いる。In addition, the rotating roller 15.16 and the rotation ratio - roller 1
Power supplies 19 and 19 are connected between terminals 6 and 15', respectively.
さらに、前記筒状体１４には、その外周に筒状体１４を
その軸心を中心とする回転を与える回転部材である一対
の駆動ローラ２０．２０が設けられている。Further, the cylindrical body 14 is provided with a pair of driving rollers 20, 20 on its outer periphery, which are rotating members that rotate the cylindrical body 14 about its axis.
上記のような各部材が真空槽Ａ内に配設されて構成され
た真空蒸着装置は、前記の実施例と同様に真空槽Ａ内を
所定の真空条件下に保持された状態で使用され、前記筒
状体１４を、その軸心を中心に回転させながら、前記電
極である回転ローラ１５．１６問および回転ローラ１６
．１５′間に電Ｂ２０．２０から電圧を印加し、前記筒
状体１４内に往復挿通される蒸着用材料１の抵抗加熱線
ヒータ２に電流を流して加熱し、抵抗加熱線ヒータ２を
被覆する蒸発物質３を蒸発させ、筒状体１４の内周面に
蒸発物質３の均一な薄膜を前記の実施例の倍の速度で形
成することができることとなる。A vacuum evaporation apparatus configured by disposing each of the above-mentioned members in a vacuum chamber A is used with the inside of the vacuum chamber A maintained under a predetermined vacuum condition as in the above embodiment, While rotating the cylindrical body 14 around its axis, the rotating rollers 15, 16 and 16, which are the electrodes, are rotated.
．． A voltage is applied from the electric wire B20.20 between 15' and a current is passed through the resistance heating wire heater 2 of the vapor deposition material 1 which is reciprocally inserted into the cylindrical body 14 to heat it, thereby covering the resistance heating wire heater 2. This makes it possible to evaporate the evaporated substance 3 and form a uniform thin film of the evaporated substance 3 on the inner circumferential surface of the cylindrical body 14 at twice the speed of the previous embodiment.
また、前記抵抗加熱線ヒータ２の外周に被覆した蒸発物
質３が全部蒸発してしまったら、前記巻取りローラ１８
により前記蒸着用材料１を所定量巻き取ることにより、
前記筒状体１４内に新たに蒸発物質３が被覆した蒸着用
材料１を前記の実施例と同様に連続的に供給でき、前記
の実施例と同様に、蒸着用材料１の供給を真空槽内の真
空を破ることなく、さらに、電極である回転ローラ１５
．１６問および回転ローラ１６．１５′間に通電しなが
ら、薄膜の形成を止めることなくできる。Further, when the evaporative substance 3 coated on the outer periphery of the resistance heating wire heater 2 has completely evaporated, the winding roller 18
By winding up a predetermined amount of the vapor deposition material 1,
The evaporation material 1 newly coated with the evaporation substance 3 can be continuously supplied into the cylindrical body 14 as in the previous embodiment, and the supply of the evaporation material 1 can be carried out in a vacuum chamber as in the previous embodiment. Furthermore, without breaking the vacuum inside, the rotating roller 15, which is an electrode,
．． The thin film can be formed without stopping while applying electricity between the 16 rollers and the rotating rollers 16 and 15'.
さらにまた、上記の実施例においては、成膜した筒状体
１４を回転ローラ１６側から抜いて新たな被蒸着体であ
る筒状体１４を簡単に装填でき、薄膜を前記の実施例の
倍の速度で形成できるとともに、蒸着製品の生産効率を
大幅に向上することができることとなる。Furthermore, in the above embodiment, the cylindrical body 14 on which the film has been formed can be pulled out from the rotating roller 16 side and a new cylindrical body 14 to be deposited can be easily loaded. This means that the production efficiency of vapor-deposited products can be greatly improved.
なお、上記の実施例に示した蒸着用材料１の形状はこれ
に限定されず、第４図に示すように、高融点金属を細い
薄板状に成形した抵抗加熱線ヒータ１２の外周に、プラ
チナ（Ｐｔ）、金（Ａ、ｕ）、銀（Ａｇ）、パラジウム
（Ｐｄ）、銅（Ｃｕ）などの前記抵抗加熱線ヒータ１２
の高融点金属材料より低融点の金属材料からなる蒸発物
質１３を被覆して、同軸状に形成した蒸着用材料１１と
したものであってもよい。Note that the shape of the vapor deposition material 1 shown in the above embodiment is not limited to this, and as shown in FIG. The resistance heating wire heater 12 is made of (Pt), gold (A, u), silver (Ag), palladium (Pd), copper (Cu), etc.
The vapor deposition material 11 may be formed coaxially by coating the evaporated substance 13 made of a metal material with a lower melting point than the high melting point metal material.
以下、本発明を実施例によりさらに具体的に説明する。Hereinafter, the present invention will be explained in more detail with reference to Examples.
実施例−１
前記第２ 回（ａ） （ｂｌに示した真空蒸着装置を用
いて、抵抗加熱線ヒータ２として直径１ｍｍのタングス
テン（Ｗ）を用い、蒸発物質３として抵抗加熱線ヒータ
２の外周に厚さ０．５ｍｍのチタン（Ｔ ｉ ）を被覆
し、直径２ｍｍの蒸着用材料１とし、筒状体４として、
外径１０ｍｍ、長さ３００ｍｍ、肉厚０．５ｍｍのガラ
ス管を用いて、真空槽内を６Ｘ６−’Ｔｏｒｒの真空条
件にして、電極である回転ローラ５．６間に５０Ａの電
流を７分間流した後、−変電流を止め、巻取りローラ８
を作動して蒸着用材料１を新たに筒状体４内に供給して
、さらに７分間、前記と同様に回転ローラ５．６間に５
０Ａの電流を流して、筒状体４であるガラス管の内周面
にＴｉの薄膜を形成した。Example-1 Second time (a) Using the vacuum evaporation apparatus shown in (bl), tungsten (W) with a diameter of 1 mm was used as the resistance heating wire heater 2, and the outer periphery of the resistance heating wire heater 2 was used as the evaporation material 3. was coated with titanium (T i ) with a thickness of 0.5 mm to form a vapor deposition material 1 with a diameter of 2 mm, and as a cylindrical body 4,
Using a glass tube with an outer diameter of 10 mm, a length of 300 mm, and a wall thickness of 0.5 mm, the inside of the vacuum chamber was set to a vacuum condition of 6 x 6-' Torr, and a current of 50 A was applied for 7 minutes between rotating rollers 5.6 that were electrodes. After flowing, the variable current is stopped and the winding roller 8
The vapor deposition material 1 is newly supplied into the cylindrical body 4 by operating the
A current of 0 A was applied to form a Ti thin film on the inner peripheral surface of the glass tube, which is the cylindrical body 4.
上記で成膜されたガラス管を取り出し、切断して、ガラ
ス管の内周面に形成されたＴｉの薄膜の膜厚を測定した
ところ１．１μｍであり、膜厚分布は３００ｍｍあたり
で１．１μｍ±２０％であり、Ｔｉの付着力も強固なも
のであった。The glass tube with the film formed above was taken out and cut, and the thickness of the Ti thin film formed on the inner peripheral surface of the glass tube was measured and found to be 1.1 μm, with a film thickness distribution of 1.1 μm per 300 mm. It was 1 μm±20%, and the adhesion of Ti was also strong.
実施例−２
前記第３図に示した真空蒸着装置を用いて、前記実施例
−１と同様な蒸着用材料ｌ、筒状体１４を用いて、さら
に真空条件も同様にして、電極である回転ローラ１５．
１６問および回転ローラ１６．１５′間に５０Ａの電流
を５分間流して、筒状体１４であるガラス管の内周面に
Ｔｉの薄膜を形成した。Example 2 Using the vacuum evaporation apparatus shown in FIG. 3, using the same evaporation material l and cylindrical body 14 as in Example 1, and using the same vacuum conditions, an electrode was prepared. Rotating roller 15.
A current of 50 A was passed for 5 minutes between the 16 questions and the rotating rollers 16 and 15' to form a Ti thin film on the inner circumferential surface of the glass tube that was the cylindrical body 14.
ガラス管の内周面に形成されたＴｉの薄膜の膜厚を測定
したところ０．５μｍであり、膜厚分布は３００ｍｍあ
たりで０．５ａｍ±１０％であ、す、Ｔｉの付着力も強
固なものであった。The thickness of the Ti thin film formed on the inner peripheral surface of the glass tube was measured to be 0.5 μm, and the film thickness distribution was 0.5 am ± 10% around 300 mm.The adhesion of Ti is also strong. It was something.
なお、上記の実施例で筒状体として円筒状のガラス管を
用いたが、金属、セラミックスなどでもよく、また、筒
状であればいずれのものでも適用できる。Although a cylindrical glass tube was used as the cylindrical body in the above embodiment, it may be made of metal, ceramics, etc., and any cylindrical body may be used.
本発明は上記のように構成したので、筒状体の内周面に
薄膜を確実に形成できるとともに、真空を破ることなく
、かつ、薄膜の形成を止めることなく薄膜形成材料であ
る蒸発物質を連続的に供給することができるので、薄膜
形成効率を大幅に向上することができるなどのすぐれた
効果を有するものである。Since the present invention is configured as described above, it is possible to reliably form a thin film on the inner circumferential surface of the cylindrical body, and also to remove the evaporated substance, which is the thin film forming material, without breaking the vacuum or stopping the formation of the thin film. Since it can be supplied continuously, it has excellent effects such as greatly improving thin film formation efficiency.
第１図は本発明に用いる蒸着用材料の一実施例の説明図
、第２図（ａ） （ｂ）は本発明の真空蒸着装置の第１
の実施例の要部を示し、第２図（ａ）は概略図、第２図
（ｂ）は要部説明図、第３図は本発明の真空蒸着装置の
第２の実施例の概略図、第４圓は本発明に用いる蒸着用
材料の他の実施例の説明図、第５関（ａｌ （ｂ） （
Ｃ）はそれぞれ従来の蒸着用材料の説明図である。
１．１１・・・・・・蒸着用材料
２．１２．２１・・・・・・抵抗加熱線ヒータ３．１３
．２２．３２．４２・・・・・・蒸発物質４．１４・・
・・・・筒状体
５．６．１５、
＋５’、１６・・・・・・回転ローラ（電極）７．１７
・・・・・・送りローラ
８．１８・・・・・・巻取りローラ
９．１９・・・・・・電源
１Ｏ１２０・・・・・・駆動ローラ
Ａ・・・・・・真空槽
３１・・・・・・ボート
４１・・・・・・るつぼ
４３・・・・・・イオンビーム
第１図
第４図
）蒐鮮裕料
第５
図
手
続
ネ甫
正
書
（自発
■、朋牛の耘
２、発明の名称
３、補正をする者
羽生との関係
住所
氏名 （名称）
４、代理人
断
平成 １年特許願第１０３１６８号
真空蒸着方法およびその装置FIG. 1 is an explanatory diagram of one embodiment of the vapor deposition material used in the present invention, and FIGS.
2(a) is a schematic diagram, FIG. 2(b) is an explanatory diagram of the essential part, and FIG. 3 is a schematic diagram of a second embodiment of the vacuum evaporation apparatus of the present invention. , the fourth circle is an explanatory diagram of another example of the vapor deposition material used in the present invention, and the fifth circle is (al (b) (
C) is an explanatory diagram of conventional vapor deposition materials. 1.11... Material for vapor deposition 2.12.21... Resistance heating wire heater 3.13
．． 22.32.42... Evaporated substance 4.14...
...Cylindrical body 5.6.15, +5', 16...Rotating roller (electrode) 7.17
...Feed roller 8.18...Take-up roller 9.19...Power supply 1O120...Drive roller A...Vacuum chamber 31. ... Boat 41 ... Crucible 43 ... Ion beam Fig. 1 Fig. 4) Procurement fees Fig. 5 Procedures Nefu Seisho (Volunteer ■, Tomogyu no Yuu) 2. Name of the invention 3. Name and address of the person making the amendment (Name) 4. Attorney's name Patent Application No. 103168 of 1999 Vacuum deposition method and apparatus
Claims (5)
する真空蒸着方法であって、長尺状の抵抗加熱線ヒータ
（２）（１２）の外周に蒸発物質（３）（１３）を被覆
して形成され、かつ、一端が送りローラ（７）（１７）
に、また他端が巻取りローラ（８）（１８）にそれぞれ
巻回された蒸着用材料（１）（１１）を、被蒸着体であ
る筒状体（４）（１４）内に挿通して配設し、前記筒状
体（４）（１４）の両端部の近傍に配設した蒸着用材料
（１）（１１）を移動可能に支持する電極（５）（１５
）、（６）（１６）を介して前記抵抗加熱線ヒータ（２
）（１２）に通電し、前記抵抗加熱線ヒータ（２）（１
２）を被覆した蒸発物質（３）（１３）を加熱・蒸発さ
せ、前記筒状体（４）（１４）の内周面に蒸発物質（３
）（１３）の薄膜を形成することを特徴とする真空蒸着
方法。(1) A vacuum evaporation method for forming a thin film on an object to be evaporated placed in a vacuum chamber (A), in which an evaporated substance (3) is placed on the outer periphery of a long resistance heating wire heater (2) (12). (13), and one end is formed by covering the feed roller (7) (17)
Insert the deposition materials (1) and (11) whose other ends are respectively wound around take-up rollers (8) and (18) into the cylindrical bodies (4) and (14) to be deposited. electrodes (5) (15) movably supporting the vapor deposition materials (1) (11) disposed near both ends of the cylindrical bodies (4) (14);
), (6) and the resistance heating wire heater (2) via (16).
) (12), the resistance heating wire heater (2) (1
The evaporative substance (3) (13) coated with
) A vacuum deposition method characterized by forming the thin film of (13).
転しながら薄膜を形成する請求項１記載の真空蒸着方法
。(2) The vacuum evaporation method according to claim 1, wherein the thin film is formed while rotating the cylindrical body (4) (14) around its axis.
（１４）と、この筒状体（４）（１４）内に挿通される
とともに、長尺状の抵抗加熱線ヒータ（２）（１２）の
外周に蒸発物質（３）（１３）を被覆して形成され、か
つ、一端が送りローラ（７）（１７）に、また他端が巻
取りローラ（８）（１８）にそれぞれ巻回された蒸着用
材料（１）（１１）と、前記筒状体（４）（１４）の両
端部の近傍に設けられ、前記蒸着用材料（１）（１１）
を移動可能に支持する電極（５）（１５）（１５′）、
（６）（１６）とを配設し、前記電極（５）（１５）（
１５′）（６）（１６）間に電圧を印加し、前記抵抗加
熱線ヒータ（２）（１２）を被覆した蒸発物質（３）（
１３）を蒸発し、前記筒状体（４）（１４）の内周面に
蒸着させることを特徴とする真空蒸着装置。(3) Inside the vacuum chamber (A), there is a cylindrical body (4) that is a non-evaporated body.
(14), and the outer periphery of the long resistance heating wire heater (2) (12) that is inserted into the cylindrical body (4) (14) and coated with the evaporative substance (3) (13). evaporation materials (1) and (11) formed by the cylinder and wound around the feed rollers (7) and (17) at one end and around the take-up rollers (8 and 18) at the other end; The vapor deposition material (1) (11) is provided near both ends of the shaped body (4) (14).
electrodes (5) (15) (15') movably supporting the
(6) (16) and the electrodes (5) (15) (
15') (6) (16), the evaporative substance (3) (covering the resistance heating wire heaters (2) (12))
13) is evaporated and deposited on the inner peripheral surfaces of the cylindrical bodies (4) and (14).
転させる回転部材（１０）（２０）を具えた請求項３記
載の真空蒸着装置。(4) The vacuum evaporation apparatus according to claim 3, further comprising a rotating member (10) (20) for rotating the cylindrical body (4) (14) about its axis.
５）、（１５′）で支持される部分が、さらに、筒状体
（１４）の内径より小径の他の電極（１６）で支持され
ることで折り返され、蒸着用材料（１）（１１）の折り
返された電極（１５）、（１６）間および電極（１６）
、（１５′）間の部分が筒状体（１４）の内部に位置し
ている請求項３記載の真空蒸着装置。(5) The vapor deposition material (1) (11) is the electrode (1).
5), the part supported by (15') is further folded back by being supported by another electrode (16) whose diameter is smaller than the inner diameter of the cylindrical body (14), and the part supported by the vapor deposition material (1) (11 ) between the folded electrodes (15) and (16) and the electrode (16)
, (15') is located inside the cylindrical body (14).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10316889A JPH02282477A (en) | 1989-04-22 | 1989-04-22 | Method and device for vacuum deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10316889A JPH02282477A (en) | 1989-04-22 | 1989-04-22 | Method and device for vacuum deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02282477A true JPH02282477A (en) | 1990-11-20 |
Family
ID=14346977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10316889A Pending JPH02282477A (en) | 1989-04-22 | 1989-04-22 | Method and device for vacuum deposition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02282477A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001223375A (en) * | 2000-02-10 | 2001-08-17 | Semiconductor Energy Lab Co Ltd | Carrying apparatus for flexible substrate, and deposition apparatus |
| US6467425B1 (en) * | 1997-08-20 | 2002-10-22 | Rheinmetall Industrie Ag | Apparatus for internally coating a metal tube |
| JP2010018871A (en) * | 2008-07-14 | 2010-01-28 | Ulvac Japan Ltd | Coaxial type vacuum arc deposition source and vacuum deposition system |
| JP2010111948A (en) * | 2009-12-25 | 2010-05-20 | Semiconductor Energy Lab Co Ltd | Film deposition system, solar cell and method for producing solar cell |
-
1989
- 1989-04-22 JP JP10316889A patent/JPH02282477A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6467425B1 (en) * | 1997-08-20 | 2002-10-22 | Rheinmetall Industrie Ag | Apparatus for internally coating a metal tube |
| JP2001223375A (en) * | 2000-02-10 | 2001-08-17 | Semiconductor Energy Lab Co Ltd | Carrying apparatus for flexible substrate, and deposition apparatus |
| JP2010018871A (en) * | 2008-07-14 | 2010-01-28 | Ulvac Japan Ltd | Coaxial type vacuum arc deposition source and vacuum deposition system |
| JP2010111948A (en) * | 2009-12-25 | 2010-05-20 | Semiconductor Energy Lab Co Ltd | Film deposition system, solar cell and method for producing solar cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3517644A (en) | Apparatus for making metal alloy resistors | |
| US5239612A (en) | Method for resistance heating of metal using a pyrolytic boron nitride coated graphite boat | |
| JPH02282477A (en) | Method and device for vacuum deposition | |
| EP0546006A1 (en) | Ion plating method | |
| US2450856A (en) | Method of coating by evaporating metals | |
| US2450851A (en) | Method of coating by evaporating metals | |
| JPS5864381A (en) | Vacuum depositing device | |
| JPS6037869B2 (en) | Vapor deposition method | |
| US3171017A (en) | Evaporation of metal or metalloids | |
| US2463791A (en) | Method of coating with quartz by thermal evaporation | |
| JPS5855563A (en) | Method for vapor deposition | |
| JPH01212759A (en) | Target for sputtering inside of tube | |
| US3488214A (en) | Evaporant material control for vapor deposition apparatus | |
| CN113764248B (en) | Metal ion source and application and use method thereof | |
| JPS5941509B2 (en) | Equipment for depositing highly adhesive, particularly hard carbon layers over large areas | |
| JPH08325714A (en) | Vapor deposition apparatus | |
| JPH01226792A (en) | Molecular beam source cell | |
| JP2000128528A (en) | Production of superconducting thin film | |
| JPS5918541A (en) | Manufacturing method for electron emission cathode | |
| JPH0241165Y2 (en) | ||
| JPS58207371A (en) | Vapor deposition source for vacuum deposition | |
| JPS58137941A (en) | Ion source | |
| JPS5864376A (en) | Vapor depositing method | |
| JPS61194177A (en) | Film forming device for small parts | |
| JPS593815B2 (en) | ion source |