JPH02276215A - Manufacture of solid electrolyte capacitor - Google Patents
Manufacture of solid electrolyte capacitorInfo
- Publication number
- JPH02276215A JPH02276215A JP1098251A JP9825189A JPH02276215A JP H02276215 A JPH02276215 A JP H02276215A JP 1098251 A JP1098251 A JP 1098251A JP 9825189 A JP9825189 A JP 9825189A JP H02276215 A JPH02276215 A JP H02276215A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- conducted
- aqueous solution
- solid electrolytic
- tantalum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000007784 solid electrolyte Substances 0.000 title 1
- 239000007787 solid Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000007864 aqueous solution Substances 0.000 claims abstract description 8
- 150000002500 ions Chemical class 0.000 claims abstract description 8
- 238000007789 sealing Methods 0.000 claims abstract description 7
- 150000001450 anions Chemical class 0.000 claims abstract description 4
- 229910045601 alloy Inorganic materials 0.000 claims abstract 2
- 239000000956 alloy Substances 0.000 claims abstract 2
- 238000010438 heat treatment Methods 0.000 claims abstract 2
- 230000002950 deficient Effects 0.000 claims description 3
- -1 tetrachloroaluminate ion Chemical class 0.000 claims description 2
- 238000007743 anodising Methods 0.000 claims 1
- 239000011888 foil Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052715 tantalum Inorganic materials 0.000 abstract description 9
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 abstract description 2
- 229910052708 sodium Inorganic materials 0.000 abstract description 2
- 239000011734 sodium Substances 0.000 abstract description 2
- 239000002253 acid Substances 0.000 abstract 1
- 239000010407 anodic oxide Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005868 electrolysis reaction Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、各種電子機器に使用される固体電解コンデン
サの製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing solid electrolytic capacitors used in various electronic devices.
従来の技術
従来の固体電解コンデンサは、タンタル・ニオブ・アル
ミニウム等の弁作用金属の多孔質体を陽極とし、その陽
極表面を電気化学的に陽極酸化して半導体性の陽極酸化
皮膜を生成させ、その後、その酸化皮膜上に陰極となる
導電性材料を設けて固体電解コンデンサを製造していた
。Conventional technology Conventional solid electrolytic capacitors use a porous body of valve metal such as tantalum, niobium, or aluminum as an anode, and electrochemically anodize the surface of the anode to generate a semiconducting anodic oxide film. Thereafter, a conductive material serving as a cathode was provided on the oxide film to manufacture a solid electrolytic capacitor.
発明が解決しようとする課題
従来の化成法では、不純物の影響等で、陽極酸化皮膜に
欠陥部が存在して絶縁性が不完全となり、このことが、
もれ電流特性および耐圧特性の劣化の原因の１つになっ
ていた。Problems to be Solved by the Invention In conventional chemical conversion methods, defects exist in the anodic oxide film due to the influence of impurities, resulting in incomplete insulation.
This was one of the causes of deterioration of leakage current characteristics and breakdown voltage characteristics.
本発明は、上記のような陽極酸化皮膜の欠陥をなくし、
もれ電流が小さ（、かつ、耐圧性のすぐれた固体電解コ
ンデンサを製造することを目的とするものである。The present invention eliminates the defects of the anodic oxide film as described above,
The purpose is to manufacture solid electrolytic capacitors with low leakage current (and excellent voltage resistance).
課題を解決するための手段
上記課題を解決するために本発明は、陽極酸化皮膜の欠
陥部を絶縁物で封孔処理するために、陽極酸化皮膜を形
成した弁作用金属および、それらの合金からなる素子を
、その素子を構成する弁作用金属のアニオン錯イオンを
含む水溶液中で陽極電解処理し、その後、さらに熱処理
を行う方法とするものである。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention provides a method for sealing defective parts of the anodic oxide film with an insulator. In this method, a device is subjected to anodic electrolysis treatment in an aqueous solution containing an anion complex ion of a valve metal constituting the device, and then further heat-treated.
作用
この封孔処理により、陽極酸化皮膜の欠陥部がな（なり
、均一で絶縁性のすぐれた酸化皮膜ができ、もれ電流特
性および耐圧特性の向上が図れることになる。Function: This sealing process eliminates defects in the anodic oxide film, creates a uniform oxide film with excellent insulation properties, and improves leakage current characteristics and withstand voltage characteristics.
実施例
以下、本発明をタンタル固体電解コンデンサを例にとり
、詳細に説明する。EXAMPLES Hereinafter, the present invention will be explained in detail by taking a tantalum solid electrolytic capacitor as an example.
（従来例）
重量１５０ｍｇのタンタルの多孔質焼結体を、０．０２
ｖｏ１％のリン酸水溶液中で電圧１００Ｖで化成し、生
成した酸化皮膜上に二酸化マンガン等の陰極層を形成し
て固体電解コンデンサに作り上げた。(Conventional example) A porous sintered body of tantalum weighing 150 mg was
A solid electrolytic capacitor was fabricated by chemically converting the material in a 1% VO phosphoric acid aqueous solution at a voltage of 100 V, and forming a cathode layer of manganese dioxide or the like on the resulting oxide film.
（実施例）
重量１５０ｍｇのタンタルの多孔質焼結体を、０．０２
ｖｏ １％のリン酸水溶液中で電圧１００Ｖで化成した
後、５０℃のオクタフルオロタンタル酸ナトリウム水溶
液中で、前記化成体を陽極としタンタル箔を陰極として
１００ｖで電解処理し、さらに、この電解処理した素子
を３００℃で熱処理を行った。この封孔処理した素子の
酸化皮膜上に、従来例と同様、二酸化マンガン等の陰極
層を形成して固体電解コンデンサに作り上げた。(Example) A porous sintered body of tantalum weighing 150 mg was
vo After chemical formation at a voltage of 100V in a 1% aqueous phosphoric acid solution, electrolytic treatment is performed at 100V in a sodium octafluorotantalate aqueous solution at 50°C with the chemical product as an anode and a tantalum foil as a cathode, and further, this electrolytic treatment The resulting device was heat-treated at 300°C. A cathode layer made of manganese dioxide or the like was formed on the oxide film of this sealed element, as in the conventional example, to produce a solid electrolytic capacitor.
第１図は完成した固体電解コンデンサ素体のもれ電流を
、第２図は耐圧を各々示しているが、本発明により作り
上げた固体電解コンデンサ素体は、従来例よりも、もれ
電流が小さく、かつバラツキも小さい。また、耐圧特性
も向上している。Figure 1 shows the leakage current of the completed solid electrolytic capacitor body, and Figure 2 shows the withstand voltage. It is small and the variation is small. In addition, the voltage resistance characteristics have also been improved.
なお、もれ電流は、３５Ｖ印加し、３分後に測定した電
流値である。Note that the leakage current is a current value measured 3 minutes after applying 35V.
この実施例においてはタンタルを使用したが、アルミニ
ウムについて、テトラクロロアルミン酸アンモニウムを
使用して同様の封孔処理を行ったところ、タンタルの場
合とほぼ同様の効果を得ることができた。このことから
・、本実施例のようにタンタルに限定されることな（、
他の弁作用金属にも適用できることは明らかである。Although tantalum was used in this example, when a similar sealing treatment was performed on aluminum using ammonium tetrachloroaluminate, almost the same effect as in the case of tantalum could be obtained. From this, it is not limited to tantalum as in this example (,
It is clear that other valve metals are also applicable.
発明の効果
以上のように、本発明によれば、陽極酸化皮膜の欠陥部
を、素子を構成する弁作用金属のカチオン錯イオンを含
む水溶液中で陽極電解処理し、その後、さらに熱処理す
るという封孔処理により、均一で絶縁性のすぐれた化成
皮膜を形成することができ、これに夷り、もれ電流特性
および耐圧特性を向上させることができた。Effects of the Invention As described above, according to the present invention, a defective part of an anodized film is subjected to an anodic electrolysis treatment in an aqueous solution containing a cationic complex ion of a valve metal constituting an element, and then further heat-treated. Through the hole treatment, it was possible to form a uniform chemical conversion film with excellent insulating properties, and in addition, it was possible to improve the leakage current characteristics and withstand voltage characteristics.
第１図は従来法と本発明により作成した固体電解コンデ
ンサのもれ電流特性比較図、第２図は従来法と本発明に
より作成した固体電解コンデンサの耐圧特性比較図であ
る。
代理人の氏名 弁理士 粟野重孝 ほか１名第
図
漬
第
図FIG. 1 is a diagram comparing the leakage current characteristics of solid electrolytic capacitors produced by the conventional method and the present invention, and FIG. 2 is a diagram comparing the breakdown voltage characteristics of the solid electrolytic capacitors produced by the conventional method and the present invention. Name of agent: Patent attorney Shigetaka Awano and one other person
Claims (3)
の表面に電気化学的に陽極酸化を行って酸化皮膜を形成
した後、その素子の酸化皮膜欠陥部に、封孔処理を施す
ことを特徴とする固体電解コンデンサの製造方法。(1) After electrochemically anodizing the surface of a sintered body made of a valve metal or an alloy thereof to form an oxide film, sealing is performed on the defective part of the oxide film of the element. A method for manufacturing a solid electrolytic capacitor characterized by:
オン錯イオンを含む水溶液中で、酸化皮膜を形成した素
子を陽極とし、焼結体と同一組成の弁作用金属箔を陰極
にして電解処理する工程と、その後、その素子を高温熱
処理する工程とからなることを特徴とする請求項１記載
の固体電解コンデンサの製造方法。(2) The sealing process is carried out in an aqueous solution containing anion complex ions of the valve metal constituting the sintered body, with the element on which the oxide film has been formed as the anode, and the valve metal foil having the same composition as the sintered body as the cathode. 2. The method of manufacturing a solid electrolytic capacitor according to claim 1, further comprising the steps of: electrolytically treating the element; and thereafter subjecting the element to high temperature heat treatment.
ロタンタル酸イオン，テトラクロロアルミン酸イオン，
ヘプタフルオロニオブ酸イオンおよび、ヘキサフルオロ
チタン酸イオン等であることを特徴とする請求項１記載
の固体電解コンデンサの製造方法。(3) The anion complex ion of the valve metal is octafluorotantalate ion, tetrachloroaluminate ion,
2. The method for manufacturing a solid electrolytic capacitor according to claim 1, wherein the heptafluoroniobate ion, hexafluorotitanate ion, or the like is used.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1098251A JPH02276215A (en) | 1989-04-18 | 1989-04-18 | Manufacture of solid electrolyte capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1098251A JPH02276215A (en) | 1989-04-18 | 1989-04-18 | Manufacture of solid electrolyte capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02276215A true JPH02276215A (en) | 1990-11-13 |
Family
ID=14214741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1098251A Pending JPH02276215A (en) | 1989-04-18 | 1989-04-18 | Manufacture of solid electrolyte capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02276215A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006270052A (en) * | 2005-02-23 | 2006-10-05 | Sanyo Electric Co Ltd | Solid electrolytic capacitor and its manufacturing method |
| WO2023234343A1 (en) * | 2022-06-01 | 2023-12-07 | パナソニックＩｐマネジメント株式会社 | Capacitor, electric circuit, circuit board, device, and method for manufacturing capacitor |
-
1989
- 1989-04-18 JP JP1098251A patent/JPH02276215A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006270052A (en) * | 2005-02-23 | 2006-10-05 | Sanyo Electric Co Ltd | Solid electrolytic capacitor and its manufacturing method |
| WO2023234343A1 (en) * | 2022-06-01 | 2023-12-07 | パナソニックＩｐマネジメント株式会社 | Capacitor, electric circuit, circuit board, device, and method for manufacturing capacitor |
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